CN214880198U - MEMS silicon microphone integrated circuit capable of improving linearity - Google Patents
MEMS silicon microphone integrated circuit capable of improving linearity Download PDFInfo
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- CN214880198U CN214880198U CN202120557348.6U CN202120557348U CN214880198U CN 214880198 U CN214880198 U CN 214880198U CN 202120557348 U CN202120557348 U CN 202120557348U CN 214880198 U CN214880198 U CN 214880198U
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Abstract
The utility model discloses a MEMS silicon microphone integrated circuit for improving linearity, which comprises a MEMS sensor chip, wherein the MEMS sensor chip comprises a first silicon chip positioned above and a second silicon chip positioned below, the lower bottom surface of a vibration diaphragm layer of the first silicon chip is electrically connected with a deposited metal layer of a second back plate layer of the second silicon chip through a first electrode, the first back plate layer of the first silicon chip is also connected with a third electrode, the first back plate layer of the first silicon chip is provided with at least one first through hole which is communicated up and down, the second back plate layer of the second silicon chip is provided with at least one second through hole which is communicated up and down, the vibration diaphragm area of the vibration diaphragm layer is provided with at least one third through hole which is communicated up and down, the third through hole is communicated with one of the first through hole and the second through hole, the MEMS sensor chip of the utility model realizes the consistency of response curves under different frequencies, has better linearity.
Description
Technical Field
The utility model relates to an improve MEMS silicon wheat integrated circuit of linearity.
Background
A microphone is a transducer that converts acoustic signals into electrical signals for processing by the hearing aid audio signal chain. There are many techniques available for this acousto-electric conversion, but a condenser microphone is the type of microphone in which the size is the smallest and the accuracy is the highest. The membrane in a condenser microphone moves with the acoustic signal, and this movement causes a change in capacitance, which in turn generates an electrical signal.
Electret Condenser Microphones (ECM) are the most widely used technology in hearing aids. The ECM employs a variable capacitor, one plate of which is made of a material having a permanent electrical charge. ECM is known to the hearing aid industry today, but the technology behind these devices has not changed much since the 1960 s. Its performance, repeatability and stability with respect to temperature and other environmental conditions are not very good. Hearing aids and other applications where high performance and consistency are important create opportunities for the development of new microphone technologies.
Micro-electro-mechanical systems (MEMS) technology is a medium strength of the capacitor microphone revolution. MEMS microphones, also known as silicon microphones, fabricated based on MEMS technology have been developed using significant advances in silicon technology over the past decades, including ultra-small fabrication structures, excellent stability and repeatability, low power consumption, all of which have become unfulfilled by the silicon industry. To date, the power consumption and noise level of MEMS microphones are still rather high and not suitable for hearing aids, but new devices have emerged that meet these two key requirements, raising the next wave of innovation in hearing aid microphones.
Main structure of MEMS silicon microphone
The main structure of the MEMS silicon microphone is similar to that shown in fig. 1, and the MEMS microphone operates on the principle that like the ECM, it is also a condenser microphone. MEMS microphones consist of a flexible suspended membrane that can vibrate freely up and down on a fixed backplate, all fabricated on a silicon wafer. The structure forms a variable capacitor with a fixed charge applied between the membrane and the backplate. The incoming sound pressure waves pass through holes in the back plate, causing the membrane to move by an amount proportional to the amplitude of the compression and rarefaction waves. This movement changes the distance between the membrane and the back plate and thus the capacitance, which changes into an electrical signal with a constant charge.
The process of manufacturing microphone sensor elements on a silicon wafer is similar to the process of manufacturing other Integrated Circuits (ICs). Unlike ECM fabrication techniques, silicon fabrication processes are very precise and highly repeatable. Not only does all MEMS microphone elements fabricated on one wafer have the same performance, but every element on a different wafer has the same performance over the product's lifetime of many years.
Disadvantages of conventional MEMS silicon microphone
Traditional MEMS silicon microphone sensor is made on the silicon substrate, and the one deck back plate that extends earlier on the silicon substrate, then makes the response film on the back plate, and in concrete work, sound is followed the pick-up hole input, because the vibrations of sound wave can lead to the response film and the silicon substrate the distance between the upper and lower electrode to change, leads to equivalent capacitance value to change. The purpose of indirectly measuring the input sound wave can be achieved by measuring the change of the equivalent capacitance value of the silicon microphone.
The equivalent capacitance values of the upper and lower electrode plates of the induction film can be expressed as follows:
wherein C represents capacitance, ε 0 is vacuum dielectric constant, ε r is relative dielectric constant, A is the area of upper and lower polar plates, and d is the distance between upper and lower polar plates.
The traditional silicon microphone is not ideal in the aspect of sensing linearity response, and the main reasons are as follows: since the sensing film is a film fixed along the periphery, the capacitance change of the capacitive sensor does not change in proportion with the change of the sound amplitude, so that the output of the electric signal hardly keeps a linear relation with the input.
SUMMERY OF THE UTILITY MODEL
An object of the present invention is to overcome the disadvantages of the conventional silicon wheat, and the present invention provides a MEMS silicon wheat integrated circuit for improving linearity, including a MEMS sensor chip, the MEMS sensor chip includes a first silicon wafer located above and a second silicon wafer located below, the first silicon wafer is sequentially provided with a first back plate layer, a first oxide layer, and a diaphragm layer from top to bottom, the second silicon wafer is sequentially provided with a deposited metal layer, a second oxide layer, and a second back plate layer from top to bottom, a lower bottom surface of the diaphragm layer of the first silicon wafer is electrically connected to an upper surface of the deposited metal layer of the second silicon wafer, the first back plate layer is provided with at least one first through hole penetrating from top to bottom, the second back plate layer is provided with at least one second through hole penetrating from top to bottom, a diaphragm region in the diaphragm layer is provided with at least one third through hole penetrating from top to bottom, the third through hole with one of first through hole and second through hole keeps lining up, first through hole and second through hole dislocation set each other, the first oxide layer of vibration diaphragm region top and second oxide layer and the deposit metal layer under all as the sacrificial layer right the vibration diaphragm region releases, the deposit metal layer of second backplate layer through first electrode with the lower bottom surface electricity on vibration diaphragm layer is connected, first backplate layer still is connected with the third electrode.
In addition, according to the utility model discloses the embodiment can have following additional technical characteristics:
at least one be equipped with first extension pipe between first through-hole and the third through-hole that link up from top to bottom rather than, first extension pipe includes the pipe body, the pipe body is close to first through-hole just proximal end portion on the upper surface on diaphragm layer is equipped with a plurality of fourth through-holes along radial direction, the pipe body is kept away from first through-hole just is in the distal end portion below the lower surface on diaphragm layer is equipped with a plurality of fifth through-holes along radial direction.
At least one be equipped with the second extension pipe between second through-hole and the third through-hole that link up from top to bottom rather than, the second extension pipe includes the pipe body, the pipe body is close to the second through-hole and be in the proximal end portion below the lower surface on diaphragm layer is equipped with a plurality of sixth through-holes along radial direction, the pipe body is kept away from the second through-hole and be in distal end portion on the upper surface on diaphragm layer is equipped with a plurality of seventh through-holes along radial direction.
The deposited metal layer of the second back plate layer is also electrically connected with the lower bottom surface of the diaphragm layer through a second electrode.
The second back plate layer is also connected with a fourth electrode.
The utility model discloses a theory of operation does:
the main structure of the Silicon-On-Insulator (SOI) buried oxide layer is composed of two Silicon wafers, namely a first Silicon wafer located above and a second Silicon wafer located below, wherein the first Silicon wafer is Silicon-On-Insulator (SOI), and a buried oxide layer is introduced between top Silicon and a back substrate. I.e. said first oxide layer. The first silicon chip comprises a diaphragm layer etched on the lower bottom surface, and the diaphragm layer is aligned with the upper surface of the second silicon chip and then sintered and bonded, so that a structure for clamping the diaphragm layer between the upper back polar plate and the lower back polar plate is formed.
Respectively etching at least one through hole which is communicated up and down and is arranged in a staggered manner on the upper back plate and the lower back plate by a dry etching technology to form an outlet and an inlet of sound waves; and removing the first oxide layer above the vibration diaphragm area, the second oxide layer below the vibration diaphragm area and the like as sacrificial layers by etching with hydrofluoric acid, so as to release the vibration diaphragm area to obtain the vibration diaphragm. The vibrating diaphragm has the effect that after sound waves enter from the inlet, sound signals enable the vibrating diaphragm to vibrate, so that the relative distances between the vibrating diaphragm and the upper back plate and the lower back plate are changed, and therefore the capacitance values of the upper back plate and the lower back plate are changed. And obtaining the change electric signals of the two capacitance values to realize the conversion between sound and electricity. Etching metal leads on the upper back plate, the lower back plate and the vibrating diaphragm area respectively; the circuit is electrically connected in an ASIC power amplifier integrated circuit to realize the amplification and output of the converted signals between sound and electricity. The sound wave enters from the inlet and exits from the outlet, and the static pressure of the input sound wave is ensured to be in a balanced state, so that the change of the equivalent capacitance value is ensured to be along with the change of the sound wave amplitude, and the trend of linear change is presented.
The utility model discloses an adopt upper and lower back of the body polar plate and the structure of dislocation set sound entry and export at MEMS sensor chip, realize the unanimity of response curve under the different frequencies, do not have the phase deviation, have better linearity.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings;
FIG. 1 is a schematic diagram of a MEMS silicon microphone integrated circuit with improved linearity;
FIG. 2 is a schematic diagram of another MEMS silicon-microphone integrated circuit structure for improving linearity;
FIG. 3 is an enlarged view of a portion of FIG. 2;
FIG. 4 is a schematic diagram showing the connection of the entire MEMS sensor chip to the ASIC;
fig. 5 is a response curve of the present invention at different frequencies;
FIG. 6 is a frequency response curve of a conventional single backplate silicon microphone;
FIG. 7 is a signal-to-noise ratio response curve of the present invention under different gains;
the structure of the vibrating diaphragm comprises 1, a third through hole, 2, a first back plate layer, 3, a fourth through hole, 4, a first extending pipe, 5, a first through hole, 6, a third electrode, 7, a first oxide layer, 8, a second electrode, 9, a second oxide layer, 10, a fourth electrode, 11, a vibrating diaphragm area, 12, a second through hole, 13, a sixth through hole, 14, a second extending pipe, 15, a second back plate layer, 16, a deposited metal layer, 17, a first electrode and 18, wherein the first through hole, the second electrode, the first oxide layer and the second oxide layer are formed in sequence.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention. The following is further explained with reference to the drawings; in order to overcome the shortcoming of traditional silicon wheat, the utility model provides a new silicon wheat sensor structure, the purpose makes the equivalent capacitance of response film present linear variation's trend along with the range of input sound, can show the linearity that improves the sensor.
In fig. 7 of fig. 1, the main idea of the present invention is to design a structure having an input port and an output port of sound wave at the same time, so that the silicon microphone obtains a linear capacitance variation trend, thereby providing an MEMS silicon microphone integrated circuit with improved linearity, which comprises a MEMS sensor chip, wherein the MEMS sensor chip comprises a first silicon wafer located above and a second silicon wafer located below, the first silicon wafer is sequentially provided with a first back plate layer 2, a first oxide layer 7, and a vibrating diaphragm layer from top to bottom, the second silicon wafer is sequentially provided with a deposited metal layer 16, a second oxide layer 9, and a second back plate layer 15 from top to bottom, the lower bottom surface of the vibrating diaphragm layer of the first silicon wafer is electrically connected to the upper surface of the deposited metal layer 16 of the second silicon wafer, the first back plate layer 2 is provided with at least one first through hole 5 penetrating from top to bottom, the second back plate layer 15 is provided with at least one second through hole 12 penetrating from top to bottom, the utility model discloses a vibration diaphragm layer, including vibration diaphragm region 11, first through-hole 5, second through-hole 12, first through-hole 5 and second through-hole 12, first through-hole 11 in the vibration diaphragm layer is equipped with at least one third through-hole 1 that link up from top to bottom, third through-hole 1 with one of the first through-hole 5 and the second through-hole 12 keeps lining up, dislocation set each other between first through-hole 5 and the second through-hole 12, it is right that first oxide layer 7 and the second oxide layer 9 and the deposit metal layer 16 under the vibration diaphragm region 11 top are all regarded as the sacrificial layer the vibration diaphragm region 11 releases, the deposit metal layer 16 of second backplate layer 15 through first electrode 17 with the lower bottom surface electricity on vibration diaphragm layer is connected, first backplate layer 2 still is connected with third electrode 6.
At least one be equipped with first extension pipe 4 between first through-hole 5 and its third through-hole 1 that link up from top to bottom, first extension pipe 4 includes the pipe body, the pipe body is close to first through-hole 5 and be in proximal end portion on the upper surface on diaphragm layer is equipped with a plurality of fourth through-holes 3 along radial direction, the pipe body is kept away from first through-hole 5 and be in the distal end portion under the lower surface on diaphragm layer is equipped with a plurality of fifth through-holes along radial direction.
At least one be equipped with second extension pipe 14 between second through-hole 12 and its third through-hole 1 that link up from top to bottom, second extension pipe 14 includes the pipe body, the pipe body is close to second through-hole 12 and be in the proximal end portion below the lower surface on diaphragm layer is equipped with a plurality of sixth through-holes 13 along radial direction, the pipe body is kept away from second through-hole 12 and the distal end portion on the upper surface on diaphragm layer is equipped with a plurality of seventh through-holes along radial direction.
The deposited metal layer 16 of the second backplate layer 15 is also electrically connected to the lower bottom surface of the diaphragm layer via the second electrode 8. The double-electrode acquisition is realized together with the first electrode, and the real-time performance and the stability of capacitance variation acquisition are enhanced.
A fourth electrode 10 is also connected to the second backsheet layer 15. And the first back plate 2 forms a capacitor structure for holding the vibrating diaphragm layer between the upper back plate and the lower back plate.
A design method of an MEMS silicon microphone integrated circuit for improving linearity comprises the following steps:
the first silicon wafer is selected as an SOI substrate wafer; etching a nano hole on a first oxide layer 7 on the SOI substrate and covering the nano hole with a silicon dioxide layer; an epitaxial layer with the thickness of 10-20 microns grows outside the first oxide layer 7 to form a diaphragm layer; the mechanical structure of at least one third through hole 1 etched on the epitaxial layer forms a vibration diaphragm area 11 in the vibration diaphragm layer;
carrying out metal lead on a first electrode 17 of a deposited metal layer 16 of a second back plate layer 15 in the second silicon wafer, and depositing a third oxide layer 18 after the lead is led to realize the protection of the lead;
aligning the prepared lower bottom surface of the diaphragm layer of the first silicon wafer with the upper surface of the third oxide layer 18 of the second silicon wafer, sintering and simultaneously bonding the deposited metal layer 16 with the lower bottom surface of the diaphragm layer through the first electrode 17 to form electric connection;
after a first back plate layer 2 arranged on a first silicon wafer and a second back plate layer 15 arranged on a second silicon wafer are ground, the thickness of the first back plate layer and the second back plate layer are reduced and polished, at least one first through hole 5 which penetrates through the first back plate layer 2 up and down to form an outlet of sound waves is etched through a dry etching technology, at least one second through hole 12 which penetrates through the second back plate layer 15 up and down to form an inlet of the sound waves is etched, the first through hole 5 and the second through hole 12 are arranged in a staggered mode, and the third through hole 1 is communicated with one of the first through hole 5 and the second through hole 12;
etching a metal lead on the first back plate layer 2 to form a third electrode 6, and etching a metal lead on the second back plate layer 15 to form a fourth electrode 10; the release of the diaphragm region 11 is achieved by removing the first oxide layer 7 above and the deposited metal layer 16 and the second oxide layer 9 and the third oxide layer 18 directly below the diaphragm region 11 as sacrificial layers by etching with hydrofluoric acid.
The design method of the MEMS silicon microphone integrated circuit for improving the linearity further comprises the following steps: at least one be equipped with first extension pipe 4 between first through-hole 5 and its third through-hole 1 that link up from top to bottom, first extension pipe 4 includes the pipe body, the pipe body is close to first through-hole 5 and be in proximal end portion on the upper surface of diaphragm layer is equipped with a plurality of fourth through-holes 3 along radial direction, the pipe body is kept away from first through-hole 5 and be in the distal end portion under the lower surface of diaphragm layer is equipped with a plurality of fifth through-holes along radial direction.
The design method of the MEMS silicon microphone integrated circuit for improving the linearity further comprises the following steps: at least one be equipped with second extension pipe 14 between second through-hole 12 and its third through-hole 1 that link up from top to bottom, second extension pipe 14 includes the pipe body, the pipe body is close to second through-hole 12 and be in the proximal end portion below the lower surface on diaphragm layer is equipped with a plurality of sixth through-holes 13 along radial direction, the pipe body is kept away from second through-hole 12 and the distal end portion on the upper surface on diaphragm layer is equipped with a plurality of seventh through-holes along radial direction.
The design method of the MEMS silicon microphone integrated circuit for improving the linearity further comprises the following steps: at least one under the prerequisite that has been equipped with first extension pipe 4 between first through-hole 5 and its third through-hole 1 that link up from top to bottom, at least one still be equipped with second extension pipe 14 between second through-hole 12 and its third through-hole 1 that link up from top to bottom, second extension pipe 14 includes the pipe body, the pipe body is close to second through-hole 12 and be in the proximal end portion below the lower surface on vibration diaphragm layer is equipped with a plurality of sixth through-holes 13 along radial direction, the pipe body is kept away from second through-hole 12 and be in distal end portion above the upper surface on vibration diaphragm layer is equipped with a plurality of seventh through-holes along radial direction.
The first extension pipe 4 or the second extension pipe 14 is arranged to uniformly distribute sound pressure into the cavity of the vibration diaphragm area 11, and the fourth through hole and the fifth through hole are arranged at equal heights of the upper surface and the lower surface of the vibration diaphragm layer through the first extension pipe 4, and the sixth through hole and the seventh through hole are arranged at equal heights of the upper surface and the lower surface of the vibration diaphragm layer through the second extension pipe 14, so that the static pressure of input sound waves is ensured to be in an integrally balanced state in the vibration diaphragm area 11, the vibration diaphragm layer is stable and stable in response to low-frequency sound waves and high-frequency sound waves, abrupt noise points cannot occur, and the linear response of the MEMS sensor under different frequencies is maintained. In addition, the first extension pipe 4 and the second extension pipe 14 may be two-port pipes or one-port blind pipes, and the sound pressure uniform distribution in the diaphragm region 11 can be realized by using the small through holes formed in the first extension pipe 4 and the second extension pipe.
The above-mentioned third oxide layer 18 may be a silicon oxide layer. The first electrode 17 or the second electrode 8, the third electrode 6, and the fourth electrode 10 are electrically connected to an amplifying circuit, the amplifying circuit functions to implement differential amplification processing of the acoustoelectric conversion signal collected by the MEMS sensor chip, and may employ an ASIC (application specific integrated circuit) commonly used in silicon microphones, which includes a logic control module provided with an MCU, an operational amplifier module electrically connected to the electrodes related to the MEMS sensor, a peripheral power circuit module, a clock, and the like, and may be implemented by referring to a mature conventional technology of the ASIC employed in fig. 4.
Fig. 5 is the utility model discloses a response curve under the different frequencies of patent can be seen, the utility model discloses a novel silicon wheat, the response curve under different frequencies is unanimous, does not have obvious phase deviation in whole frequency band, has proved that the silicon wheat of design has good linearity.
Fig. 6 shows the frequency response characteristic curve of the conventional single backplate silicon microphone, and from the comparison point of view, compared with fig. 5, in the case that fig. 6 has a significant phase deviation at low and high frequencies, the silicon microphone deviates from linearity, and a relatively significant distortion occurs, indicating that the conventional single backplate silicon microphone has poor linearity in the low and high frequency ranges.
Fig. 7 shows the snr response curve of the silicon microphone under different gains according to the present invention, which can be seen that the minimum is above 88dB, and the maximum is 92dB, and the silicon microphone has a better snr.
In the description herein, references to the description of "one embodiment" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (5)
1. An MEMS silicon microphone integrated circuit for improving linearity is characterized by comprising an MEMS sensor chip, wherein the MEMS sensor chip comprises a first silicon wafer positioned above and a second silicon wafer positioned below, the first silicon wafer is sequentially provided with a first back plate layer, a first oxide layer and a diaphragm layer from top to bottom, the second silicon wafer is sequentially provided with a deposited metal layer, a second oxide layer and a second back plate layer from top to bottom, the lower bottom surface of the diaphragm layer of the first silicon wafer is electrically connected with the upper surface of the deposited metal layer of the second silicon wafer, the first back plate layer is provided with at least one first through hole which is communicated from top to bottom, the second back plate layer is provided with at least one second through hole which is communicated from top to bottom, a diaphragm area in the diaphragm layer is provided with at least one third through hole which is communicated from top to bottom, and the third through hole is communicated with one of the first through hole and the second through hole, the first through hole and the second through hole are arranged in a staggered mode, the first oxide layer above the vibration diaphragm area, the second oxide layer right below the first oxide layer and the deposition metal layer are all used as sacrificial layers to release the vibration diaphragm area, the deposition metal layer of the second back plate layer is electrically connected with the lower bottom surface of the vibration diaphragm layer through the first electrode, and the first back plate layer is further connected with the third electrode.
2. The MEMS silicon microphone integrated circuit for improving linearity as claimed in claim 1, wherein a first extension tube is disposed between at least one of the first through holes and a third through hole penetrating up and down through the first through hole, the first extension tube comprises a tube body, a proximal end portion of the tube body, which is close to the first through hole and is above the upper surface of the diaphragm layer, is provided with a plurality of fourth through holes along a radial direction, and a distal end portion of the tube body, which is far away from the first through hole and is below the lower surface of the diaphragm layer, is provided with a plurality of fifth through holes along the radial direction.
3. The MEMS silicon microphone integrated circuit for improving linearity as claimed in claim 1, wherein a second extension tube is disposed between at least one of the second through holes and a third through hole penetrating up and down, the second extension tube comprises a tube body, a proximal end portion of the tube body close to the second through hole and below the lower surface of the diaphragm layer is provided with a plurality of sixth through holes along a radial direction, and a distal end portion of the tube body away from the second through hole and above the upper surface of the diaphragm layer is provided with a plurality of seventh through holes along a radial direction.
4. An improved linearity MEMS silicon microphone integrated circuit as claimed in claim 1 wherein said deposited metal layer of said second backplate layer is further electrically connected to said lower bottom surface of said diaphragm layer by a second electrode.
5. An improved linearity MEMS silicon microphone integrated circuit as claimed in claim 1 or 4, wherein a fourth electrode is further connected to said second backplate layer.
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