CN112689229B - Silicon-based microphone and manufacturing method thereof - Google Patents
Silicon-based microphone and manufacturing method thereof Download PDFInfo
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- CN112689229B CN112689229B CN202011589462.3A CN202011589462A CN112689229B CN 112689229 B CN112689229 B CN 112689229B CN 202011589462 A CN202011589462 A CN 202011589462A CN 112689229 B CN112689229 B CN 112689229B
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Abstract
The invention provides a silicon-based microphone, which comprises a silicon substrate with a back cavity, and a vibrating diaphragm and a back plate which are arranged above the silicon substrate, wherein the vibrating diaphragm comprises an inner vibrating diaphragm and an outer vibrating diaphragm which is arranged at the periphery of the inner vibrating diaphragm and is arranged at an interval with the inner vibrating diaphragm. The silicon-based microphone has the advantage that the outer diaphragm is not easy to break under the action of large sound pressure.
Description
[ technical field ] A method for producing a semiconductor device
The present invention relates to microphones, and more particularly, to a silicon-based microphone.
[ background of the invention ]
With the development of wireless communication, more and more mobile phone users are provided worldwide, and the user's desire for a mobile phone not only meets the requirement of a call, but also needs to be able to provide a high-quality call effect. The Microphone with more applications and better performance is a Micro-Electro-Mechanical-System Microphone (also called a silicon-based Microphone). The packaging volume of the microphone is smaller than that of the traditional electret microphone, the sensitivity is higher, and the application is wider and wider.
However, when the silicon-based microphone in the related art is subjected to performance test, for example, during blowing, the outer diaphragm is subjected to a large sound pressure, so that the outer diaphragm is cracked and broken and fails in the test process.
Therefore, it is necessary to provide a new silicon-based microphone to solve the above problems.
[ summary of the invention ]
The invention aims to provide a silicon-based microphone with an outer diaphragm not easy to break under the action of large sound pressure and a method for manufacturing the microphone.
The technical scheme of the invention is as follows:
the utility model provides a silicon-based microphone, is in including the silicon substrate that has the back of the body chamber and setting vibrating diaphragm and backplate above the silicon substrate, the vibrating diaphragm includes interior vibrating diaphragm and is located interior vibrating diaphragm periphery and with the outer vibrating diaphragm that interior vibrating diaphragm interval set up, its characterized in that, the backplate include with outer vibrating diaphragm fixed connection's backplate support, support by the backplate support and be located the backplate midbody of back of the body chamber top and certainly the backplate midbody court the vibrating diaphragm direction is extended resist the post, works as during the vibrating diaphragm vibration, outer vibrating diaphragm can produce deformation and with it is inconsistent to resist the post.
Preferably, the resisting column is integrally formed with the back plate.
Preferably, the silicon-based microphone further comprises a backplate electrode disposed on a side of the backplate intermediate body facing the diaphragm.
Preferably, the outer diaphragm comprises an outer diaphragm fixing part fixedly connected with the back plate supporting body and a vibratable outer diaphragm vibrating part connected with the outer diaphragm fixing part, and the resisting column is opposite to the outer diaphragm vibrating part and arranged at intervals.
Preferably, a backboard groove is formed in one surface, far away from the vibrating diaphragm, of the backboard, the direction of a notch of the backboard groove is opposite to the extending direction of the resisting column, and the width of a groove hole of the backboard groove is consistent with the width of the resisting column.
The invention also provides a manufacturing method of the silicon-based microphone, which comprises the following steps:
101. providing a silicon substrate, and depositing an insulating layer on the surface of the silicon substrate;
102. arranging a vibrating diaphragm on the insulating layer;
103. depositing a first sacrificial layer on the vibrating diaphragm, and etching the first sacrificial layer to form a groove;
104. depositing a second sacrificial layer on the first sacrificial layer;
105. depositing a back-plate electrode on the second sacrificial layer;
106. depositing a back sheet on the back sheet electrode layer;
107. etching on the silicon substrate to form a back cavity;
108. and releasing the insulating layer, the first sacrificial layer and the second sacrificial layer on the upper part of the back cavity to obtain the vibratile diaphragm and the back plate with the resisting column.
Preferably, the material of the insulating layer is silicon oxide.
Preferably, the material of the diaphragm is polysilicon.
Preferably, the material of the first sacrificial layer and the second sacrificial layer is silicon oxide.
Preferably, the material of the back plate electrode is polysilicon, and the material of the back plate is silicon nitride.
The invention has the beneficial effects that: compared with the prior art, the silicon-based microphone back plate is provided with the resisting column on one surface facing the vibrating diaphragm, the resisting column is arranged opposite to the outer vibrating diaphragm, a certain gap is reserved between the resisting column and the outer vibrating diaphragm, when the vibrating diaphragm is vibrated under the action of sound pressure, the vibration amplitude of the vibrating diaphragm is increased along with the increase of the sound pressure, the deformation of the outer vibrating diaphragm is increased, and when the outer vibrating diaphragm is in contact with the resisting column due to vibration, the resisting column plays a role in resisting the outer vibrating diaphragm so as to prevent the outer vibrating diaphragm from being deformed greatly, so that the outer vibrating diaphragm is prevented from being broken and losing efficacy due to overlarge deformation.
[ description of the drawings ]
Fig. 1 is a schematic cross-sectional structure diagram of a silicon-based microphone according to an embodiment of the present invention;
fig. 2 is a schematic flowchart of a method for manufacturing a silicon-based microphone according to an embodiment of the present invention;
fig. 3 is a schematic flow chart of a manufacturing process of a silicon-based microphone corresponding to the process 101 according to an embodiment of the present invention;
fig. 4 is a schematic flow chart of a manufacturing process of a silicon-based microphone corresponding to the process 102 according to an embodiment of the present invention;
fig. 5 is a schematic flow chart of a process for manufacturing a silicon-based microphone corresponding to the process 103 according to an embodiment of the present invention;
fig. 6 is a schematic flow chart of a process for manufacturing a silicon-based microphone corresponding to the process 104 according to an embodiment of the present invention;
fig. 7 is a schematic flow chart illustrating a process of manufacturing a silicon-based microphone corresponding to the process 105 according to an embodiment of the present invention;
fig. 8 is a schematic flow chart illustrating a manufacturing process of a silicon-based microphone corresponding to the process 106 according to an embodiment of the present invention;
fig. 9 is a schematic flow chart of a manufacturing process of a silicon-based microphone corresponding to the process 107 according to an embodiment of the present invention.
[ detailed description ] A
Fig. 1 is a schematic cross-sectional view of a silicon-based microphone according to an embodiment of the present invention.
The embodiment of the invention provides a silicon-based microphone and a manufacturing method thereof. As shown in fig. 1, the silicon-based microphone 1 includes a silicon substrate 10, an insulating layer 20, a diaphragm 30, and a back plate 40, which are sequentially stacked. The silicon-based microphone 1 further comprises a back-plate electrode 50 arranged on the side of the back-plate facing the diaphragm.
The silicon substrate 10 is used to carry the insulating layer 20, the diaphragm 30, and the back plate 40, among others. The silicon substrate 10 includes a back cavity 101.
The insulating layer 20 is disposed on the silicon substrate 10. The insulating layer 20 may be made of a silicon oxide material. Specifically, the insulating layer 20 is disposed between the silicon substrate 10 and the diaphragm 30 to perform an insulating function.
The diaphragm 30 is disposed on the insulating layer 20. The diaphragm 30 may be made of a polysilicon material. The diaphragm 30 has a leakage hole 310, an inner diaphragm 320 at the inner circumference of the leakage hole 310, and an outer diaphragm 330 at the outer circumference of the leakage hole 310.
Wherein, the inner diaphragm 320 is disposed opposite to the back plate 40 and the back cavity 101 and spaced apart from the back plate 40. Specifically, the inner diaphragm 320 is disposed between the back plate 40 and the back cavity 101.
Wherein, a portion of the outer diaphragm 330 is disposed on the insulating layer 20, and another portion of the outer diaphragm 330 is disposed opposite to the backplate 40 and the back cavity 101 and spaced apart from the backplate 40. Specifically, a part of the outer diaphragm 330 is disposed between the insulating layer 20 and the back plate 40, and another part of the outer diaphragm 330 is disposed between the back plate 40 and the back cavity 101.
The back plate 40 is disposed on the diaphragm 30. The backplate 40 may be made of a silicon nitride material. The back plate 40 includes a back plate supporter 410, a back plate intermediate body 420, and a resisting column 430.
The backplate support 410, the outer diaphragm 330, the insulating layer 20, and the silicon substrate 10 are sequentially stacked. Specifically, the back plate support 410 is disposed on the outer diaphragm 330.
The backplate intermediate body 420 is located on the back cavity 101 and spaced apart from the inner diaphragm 320 and the outer diaphragm 330.
The resistive columns 430 extend from the backplate intermediate body 420 toward the outer diaphragm 330. Wherein the resisting post 430 is integrally formed with the back plate 40.
The outer diaphragm 330 includes an outer diaphragm fixing portion 331 fixed between the insulating layer 20 and the backplate support 410, and a vibratable outer diaphragm vibrating portion 332 connected to the outer diaphragm fixing portion 331. The outer diaphragm fixing portion 331 is integrally formed with the outer diaphragm vibrating portion 332. The resisting column 430 is located near the middle of the outer diaphragm vibrating portion 332 in the region extending from the outer diaphragm fixing portion 331 toward the leakage hole 310.
It should be noted that, when the silicon-based microphone 1 is subjected to a performance test, for example, during air blowing, the inner diaphragm 320 and the outer diaphragm 330 are subjected to a large sound pressure to generate vibration. When the outer diaphragm 330 vibrates, the outer diaphragm 330 deforms. Due to the blocking effect of the resisting column 430, the outer diaphragm 330 can be limited from generating excessive deformation, so that the phenomenon that the outer diaphragm 330 is broken due to excessive deformation of the outer diaphragm 330 is avoided.
The backplate 40 has a backplate recess 440 on a side thereof remote from the diaphragm 30. The notch direction of the back plate groove 440 is opposite to the extending direction of the resisting column 430, and the slot width of the back plate groove 440 is identical to the width of the resisting column 430. The back plate groove 440 is disposed opposite the resisting post 430.
The backplate electrode 50 is disposed on one surface of the backplate intermediate body 420 facing the diaphragm 30. Specifically, the back plate electrode 50 is disposed opposite to the diaphragm 30 and spaced apart from the diaphragm 30. The back plate electrode 50 may be made of a polysilicon material.
Compared with the prior art, the silicon-based microphone back plate is provided with the resisting column on one surface facing the vibrating diaphragm, the resisting column is arranged opposite to the outer vibrating diaphragm, a certain gap is reserved between the resisting column and the outer vibrating diaphragm, when the vibrating diaphragm is vibrated under the action of sound pressure, the vibration amplitude of the vibrating diaphragm is increased along with the increase of the sound pressure, meanwhile, the deformation of the outer vibrating diaphragm is also increased, when the outer vibrating diaphragm is in vibration contact with the resisting column, the resisting column plays a role in resisting the outer vibrating diaphragm so as to prevent the outer vibrating diaphragm from being deformed greatly, and further, the outer vibrating diaphragm is prevented from being broken and losing efficacy due to overlarge deformation. The above is an extension of the description of the structure of the silicon-based microphone according to the embodiment of the present invention, and the following description is made from the viewpoint of processing the silicon-based microphone.
Referring to fig. 2, fig. 2 is a schematic flow chart of a manufacturing method of a silicon-based microphone according to an embodiment of the present invention, the manufacturing method of the silicon-based microphone includes:
101. a silicon base layer 11 is provided and an insulating layer to be released 21 is deposited on the surface of the silicon base layer 11.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a manufacturing process of a silicon-based microphone corresponding to the process 101 according to an embodiment of the invention. Fig. 3 shows a general layered structure of depositing an insulating layer 21 to be released on the surface of a silicon base layer 11. The to-be-released insulating layer 21 may be made of a silicon oxide material.
102. A diaphragm 30 is provided on the insulating layer 21 to be etched.
Referring to fig. 4, fig. 4 is a schematic diagram of a manufacturing process of a silicon-based microphone corresponding to the process 102 according to an embodiment of the invention. Fig. 4 shows a substantially laminated structure in which the diaphragm 30 is provided on the insulating layer to be released 21. The diaphragm can be made of polysilicon material. The diaphragm 30 may include a leakage hole 310, an inner diaphragm 320 located at an inner circumference of the leakage hole 310, and an outer diaphragm 330 located at an outer circumference of the leakage hole 310.
103. A first sacrificial layer 60 is deposited on the diaphragm 30, and a groove 610 is etched in the first sacrificial layer 60.
Referring to fig. 5, fig. 5 is a schematic diagram of a manufacturing process of a silicon-based microphone corresponding to the process 103 according to an embodiment of the invention. Fig. 5 shows a general laminated structure in which the first sacrificial layer 60 including the groove 610 is formed on the diaphragm 30. The first sacrificial layer 60 is made of a silicon oxide material. The first sacrificial layer 60 may include at least two grooves.
104. A second sacrificial layer 70 is deposited over the first sacrificial layer 60.
Referring to fig. 6, fig. 6 is a schematic diagram illustrating a manufacturing process of a silicon-based microphone corresponding to the process 104 according to an embodiment of the invention. Fig. 6 shows a general stacked structure with a second sacrificial layer 70 deposited on the first sacrificial layer 60. The second sacrificial layer 70 may be made of a silicon oxide material. Wherein the second sacrificial layer 70 may include a recess 710. The recess 710 is located within the groove 610.
105. The backplane electrode 50 is deposited on the second sacrificial layer 70.
Referring to fig. 7, fig. 7 is a schematic diagram illustrating a manufacturing process of a silicon-based microphone corresponding to the process 105 according to an embodiment of the invention. Fig. 7 shows a general stacked structure with the back-plate electrode 50 deposited on the second sacrificial layer 70. The back plate electrode 50 may be made of a polysilicon material. The back plate electrode 50 may be plural.
It should be noted that, in the description of the present invention, the term "plurality" means three or more.
106. The backplate 40 is deposited over the diaphragm 30, the second sacrificial layer 70, and the backplate electrode 50.
Referring to fig. 8, fig. 8 is a schematic diagram illustrating a manufacturing process of a silicon-based microphone corresponding to the process 106 according to an embodiment of the invention. FIG. 8 shows a generally layered structure of the backplate 40 deposited on the diaphragm 30, the second sacrificial layer 70, and the backplate electrode 50. The backplate 40 may be made of a silicon nitride material.
Among other things, the back plate 40 may include a back plate supporter 410, a back plate midbody 420, and a resisting column 430. The back plate support 410 is disposed on the outer diaphragm 330. The backplate intermediate body 420 is disposed on the backplate electrode 50 and spaced apart from the inner diaphragm 320 and the outer diaphragm 330. A resist pillar 430 is disposed on the second sacrificial layer 70. Specifically, the resist pillar 430 is disposed within the recess 710.
The backplate 40 also has a backplate recess 440 on a side thereof remote from the diaphragm 30. The notch direction of the back plate groove 440 is opposite to the extending direction of the resisting column 430, and the slot width of the back plate groove 440 is identical to the width of the resisting column 430. The back plate groove 440 is disposed opposite the resisting post 430.
107. Etching is performed on the silicon base layer 11 to form a silicon substrate 10 having a back cavity 101.
Referring to fig. 9, fig. 9 is a schematic diagram illustrating a manufacturing process of a silicon-based microphone corresponding to the process 107 according to an embodiment of the invention. Fig. 9 shows a general stacked structure of a silicon substrate 10 having a back cavity 101, a to-be-released insulating layer 21, a diaphragm 30, a back-plate electrode 50, and a back-plate 40.
108. The release of the insulating layer to be released 21, the first sacrificial layer 60, and the second sacrificial layer 70 in the upper portion of the back cavity 101 results in the vibratable diaphragm 30 and the back plate 40 with the resisting post 430.
It is understood that after the insulating layer 21 to be released, the first sacrificial layer 60 and the second sacrificial layer 70 on the upper portion of the back cavity 101 are released, the silicon-based microphone 1 as shown in fig. 1 can be obtained.
The silicon-based microphone and the manufacturing method thereof provided by the invention are described in detail above. While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the invention.
Claims (9)
1. A silicon-based microphone comprises a silicon substrate with a back cavity, and a vibrating diaphragm and a back plate which are arranged above the silicon substrate, wherein the vibrating diaphragm comprises an inner vibrating diaphragm and an outer vibrating diaphragm which is arranged on the periphery of the inner vibrating diaphragm and is arranged at an interval with the inner vibrating diaphragm; the outer vibrating diaphragm comprises an outer vibrating diaphragm fixing part fixedly connected with the back plate supporting body and a vibratile outer vibrating diaphragm vibrating part connected with the outer vibrating diaphragm fixing part, and the resisting column is opposite to the outer vibrating diaphragm vibrating part and is arranged at intervals.
2. The silicon-based microphone of claim 1, wherein: the resisting column and the back plate are integrally formed.
3. The silicon-based microphone of claim 1, wherein: the silicon-based microphone also comprises a back plate electrode arranged on one surface of the back plate intermediate body facing the vibrating diaphragm.
4. The silicon-based microphone of claim 1, wherein: the side, far away from the vibrating diaphragm, of the back plate is provided with a back plate groove, the direction of a groove opening of the back plate groove is opposite to the extending direction of the resisting column, and the width of a groove hole of the back plate groove is consistent with that of the resisting column.
5. A method for manufacturing a silicon-based microphone according to claim 1, wherein: the method comprises the following steps:
101. providing a silicon substrate, and depositing an insulating layer to be released on the surface of the silicon substrate;
102. arranging a vibrating diaphragm on the insulating layer to be released;
103. depositing a first sacrificial layer on the diaphragm, and etching the first sacrificial layer to form a groove;
104. depositing a second sacrificial layer on the first sacrificial layer;
105. depositing a back-plate electrode on the second sacrificial layer;
106. depositing a back plate on the diaphragm, the second sacrificial layer and the back plate electrode;
107. etching the silicon substrate layer to form a silicon substrate with a back cavity;
108. and releasing the insulating layer, the first sacrificial layer and the second sacrificial layer on the upper part of the back cavity to obtain the vibratile diaphragm and the back plate with the resisting column.
6. The method of claim 5, wherein: the insulating layer is made of silicon oxide.
7. The method of claim 5, wherein: the vibrating diaphragm is made of polycrystalline silicon.
8. The method of claim 5, wherein: the first sacrificial layer and the second sacrificial layer are made of silicon oxide.
9. The method of claim 5, wherein: the back plate electrode is made of polycrystalline silicon, and the back plate is made of silicon nitride.
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