CN103702269A - Mems microphone - Google Patents
Mems microphone Download PDFInfo
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- CN103702269A CN103702269A CN201310754247.8A CN201310754247A CN103702269A CN 103702269 A CN103702269 A CN 103702269A CN 201310754247 A CN201310754247 A CN 201310754247A CN 103702269 A CN103702269 A CN 103702269A
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- backboard
- vibrating diaphragm
- insulated support
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Abstract
The invention provides an MEMS microphone, comprising a substrate and a capacitor system arranged on the substrate, wherein the capacitor system comprises a vibration film and a first back plate and a second back plate which are arranged at two sides of the vibration film respectively; the vibration film forms a first insulation interval and a second insulation interval with the first back plate and the second back plate respectively; the MEMS microphone also comprises a first insulation support part and a second insulation support part which are positioned in the first insulation interval and the second insulation interval respectively; the length of the first insulation support part in the direction pointing to the second back plate from the first back plate is 1/3-2/3 of the width of the first insulation interval in the same direction; the length of the second insulation support part in the direction pointing to the second back plate from the first back plate is 1/3-2/3 of the width of the second insulation interval in the same direction. The first insulation support part and the second insulation support part can achieve the functions of limiting the amplitude of the vibration film, so the damage of the vibration film is prevented under the high-sound pressure work state of the MEMS microphone.
Description
[technical field]
The present invention relates to a kind of microphone, relate in particular to a kind of MEMS microphone.
[background technology]
MEMS microphone is that a kind of electric energy made from micromachining technology changes sound device, the feature such as it has, and volume is little, good frequency response, noise are low.Along with compact, the slimming development of electronic equipment, MEMS microphone is applied on these equipment more and more widely.
MEMS microphone in correlation technique comprises silicon base and the capacity plate antenna being comprised of vibrating diaphragm and backboard, and vibrating diaphragm is relative with backboard and separated by a distance.Vibrating diaphragm produces vibration under the effect of sound wave, causes the distance between vibrating diaphragm and backboard to change, and causes the electric capacity of capacity plate antenna to change, thereby acoustic signals is transformed for the signal of telecommunication.MEMS microphone is in the process of energising work, and the splintering problem causing due to high sound pressure easily appears in vibrating diaphragm.
Therefore, be necessary to provide a kind of novel MEMS microphone.
[summary of the invention]
The object of the present invention is to provide a kind of MEMS microphone with high sound pressure protection.
Technical scheme of the present invention is as follows: a kind of MEMS microphone, comprise and there is the substrate in back of the body chamber and be located at described suprabasil capacitor system, described capacitor system comprises vibrating diaphragm and relative with described vibrating diaphragm and be separately positioned on the first backboard and second backboard of described vibrating diaphragm both sides, described the first backboard and described vibrating diaphragm and the second backboard and described vibrating diaphragm divide at a certain distance and form respectively the first clearance for insulation and the second clearance for insulation
This MEMS microphone also comprises the first insulated support and the second insulated support laying respectively in described the first clearance for insulation and the second clearance for insulation, described the first insulated support is connected with described the first backboard or vibrating diaphragm, and described the second insulated support is connected with described the second backboard or vibrating diaphragm;
Described the first insulated support is 1/3 to 2/3 of point to length in described the second backboard direction along described the first backboard be described the first clearance for insulation on equidirectional width; Described the second insulated support is 1/3 to 2/3 of point to length in described the second backboard direction along described the first backboard be described the second clearance for insulation on equidirectional width.
Preferably, described the first insulated support is connected with described the first backboard, and described the second insulated support is connected with described the second backboard.
Preferably, described the first insulated support is with described the first backboard towards being connected, and described the second insulated support is connected with described vibrating diaphragm.
Preferably, described the first insulated support is connected with described vibrating diaphragm, and described the second insulated support is connected with described the second backboard.
Preferably, described the first insulated support is connected with described vibrating diaphragm, and described the second insulated support is connected with described vibrating diaphragm.
Another technical scheme that the present invention solves its technical problem employing is: construct a kind of MEMS microphone, comprise and there is the substrate in back of the body chamber and be located at described suprabasil capacitor system, described capacitor system comprises backboard and relative with described backboard and be separately positioned on the first vibrating diaphragm and second vibrating diaphragm of described backboard both sides, described the first vibrating diaphragm and described backboard and the second vibrating diaphragm and described backboard divide at a certain distance and form respectively the first clearance for insulation and the second clearance for insulation
This MEMS microphone also comprises the first insulated support and the second insulated support laying respectively in described the first clearance for insulation and the second clearance for insulation, described the first insulated support is connected with described the first vibrating diaphragm or backboard, and described the second insulated support is connected with described the second vibrating diaphragm or backboard;
Described the first insulated support is 1/3 to 2/3 of point to length in described the second vibrating diaphragm direction along described the first vibrating diaphragm be described the first clearance for insulation on equidirectional width; Described the second insulated support is 1/3 to 2/3 of point to length in described the second vibrating diaphragm direction along described the first vibrating diaphragm be described the second clearance for insulation on equidirectional width.
Preferably, described the first insulated support is connected with described the first vibrating diaphragm, and described the second insulated support is connected with described the second vibrating diaphragm.
Preferably, described the first insulated support is connected with described the first vibrating diaphragm, and described the second insulated support is connected with described backboard.
Preferably, described the first insulated support is connected with described backboard, and described the second insulated support is connected with described the second vibrating diaphragm.
Preferred described the first insulated support is connected with described backboard, and described the second clearance for insulation is connected with described backboard.
Beneficial effect of the present invention is: the first insulated support and the second insulated support can play the effect of restriction vibrating diaphragm amplitude, therefore can prevent that MEMS microphone is under high sound pressure operating state, the damage that vibrating diaphragm occurs.
[accompanying drawing explanation]
Fig. 1 is the structural representation of a kind of MEMS microphone the first embodiment of the present invention;
Fig. 2 is the structural representation of a kind of MEMS microphone the second embodiment of the present invention.
[embodiment]
Below in conjunction with drawings and embodiments, the invention will be further described.
As shown in Figure 1, a kind of MEMS microphone 100 comprises substrate 101 and is arranged on the capacitor cell 103 on substrate 101.Substrate 101 is made by semi-conducting material, silicon for example, and it has the back of the body chamber 102 of running through, and the upper surface of substrate 101 is provided with insulating barrier 112.Capacitor cell 103 is connected with this insulating barrier 112.
Capacitor cell 103 comprises vibrating diaphragm 104 and relative with vibrating diaphragm 104 and be arranged on the first backboard 105 and second backboard 106 of vibrating diaphragm 104 both sides.Between the first backboard 105 and vibrating diaphragm 104 and between the second backboard 106 and vibrating diaphragm 104, be equipped with insulating part 107.Insulating part 107 forms the first clearance for insulation 108 and the second clearance for insulation 109 by the first backboard 105 and vibrating diaphragm 104 and the second backboard 106 for 104 minutes at a certain distance and respectively with vibrating diaphragm.On the first backboard 105 He on the second backboard 106, be equipped with several through holes 114.When MEMS microphone energising work, the first backboard 105 can be with opposite polarity electric charge with vibrating diaphragm 104, the second backboard 106 with vibrating diaphragm 104, thereby formation electric capacity, under the effect of vibrating diaphragm 104 at sound wave, produce vibration, distance between vibrating diaphragm 104 and the first backboard 105 and the second backboard 106 can change, thereby cause the electric capacity of capacitor system to change, and then acoustic signals is transformed for the signal of telecommunication, realize the corresponding function of microphone.
This MEMS microphone 100 also comprises the second insulated support 113 that lays respectively at the first insulated support 110 in the first clearance for insulation 108 and be positioned at the second clearance for insulation 109.In the present embodiment, the first insulated support 110 is connected towards the surface of the first clearance for insulation 108 with the first backboard 105, and the second insulated support 113 is connected towards the surface of the second clearance for insulation 109 with the second backboard 106.And; the first insulated support 110 is 2/3 of point to length d 1 in the second backboard 106 directions along the first backboard 105 be the first clearance for insulation on equidirectional width D 1; the second insulated support 113 is at point to length l in the second backboard 106 directions along the first backboard 105 be the second clearance for insulation 109 on equidirectional 2/3 of width L; under this structure, the first insulated support 110 and the second insulated support 113 can play best high sound pressure protection effect.If one end that definition the first insulated support 110 is connected with the first backboard 105 is stiff end, the other end is free end; Defining one end that the second insulated support 113 is connected with the second backboard 106 is stiff end, the other end is free end, so in this case, vibrating diaphragm 104 can only be between the first insulated support 110 and the free end of the second insulated support 113 space internal vibration, therefore just avoided under high sound pressure, due to the excessive damage causing of vibrating diaphragm amplitude.
Be understandable that, the first insulated support 110 and the second insulated support 113 can also have other three kinds of set-up modes, respectively:
1) the first insulated support 110 is arranged on the first backboard 105 towards the surface of the first clearance for insulation 108, and the second insulated support 113 is arranged on vibrating diaphragm 104 towards the surface of the second clearance for insulation 109;
2) the first insulated support 110 is arranged on vibrating diaphragm 104 towards the surface of the first clearance for insulation 108, and the second insulated support 113 is arranged on the second backboard 106 towards the surface of the second clearance for insulation 109;
3) the first insulated support 110 is arranged on vibrating diaphragm 104 towards the surface of the first clearance for insulation 108, and the second insulated support 113 is arranged on vibrating diaphragm 104 towards the surface of the second clearance for insulation 109.
In addition, as a kind of preferred embodiment, in order to prevent that vibrating diaphragm 104 from adsorbing with the first backboard 105 or the second backboard 106 in vibration processes, also at the first backboard 105, towards surface and second backboard 106 of the first clearance for insulation 108, on the surface of the second clearance for insulation 109, be provided with several insulation projections 111.
The second embodiment:
As shown in Figure 2, a kind of MEMS microphone 200 comprises substrate 201 and is arranged on the capacitor cell 203 on substrate 201.Substrate 201 is made by semi-conducting material, silicon for example, and it has the back of the body chamber 202 of running through, and the upper surface of substrate 201 is provided with insulating barrier 214.Capacitor cell 203 is connected with this insulating barrier 214.
This MEMS microphone 200 also comprises the second insulated support 211 that lays respectively at the first insulated support 210 in the first clearance for insulation 208 and be positioned at the second clearance for insulation 209.In the present embodiment, the first insulated support 210 is connected towards the surface of the first clearance for insulation 208 with the first vibrating diaphragm 205, and the second insulated support 211 is connected towards the surface of the second clearance for insulation 209 with the second vibrating diaphragm 206.And; the first insulated support 210 is 2/3 of point to length d 2 in the second vibrating diaphragm 206 directions along the first vibrating diaphragm 205 be the first clearance for insulation on equidirectional width D 2; the second insulated support 211 is at point to length r in the second vibrating diaphragm 206 directions along the first vibrating diaphragm 205 be the second clearance for insulation 209 on equidirectional 2/3 of width R; under this structure, the first insulated support 210 and the second insulated support 211 can play best high sound pressure protection effect.During the 200 energising work of MEMS microphone, the first vibrating diaphragm 205 and the second vibrating diaphragm 206 all can produce vibration, when the first vibrating diaphragm 205 and the second vibrating diaphragm 206 vibration, the first insulated support 210 all can contact with backboard 204 with the second insulated support 211, existence due to the first insulated support 210 and the second insulated support 211, the amplitude of the first vibrating diaphragm 205 and the second vibrating diaphragm 206 has been limited, and therefore can prevent the damage that vibrating diaphragm occurs under high sound pressure operating state.
Be understandable that, the first insulated support 210 and the second insulated support 211 can also have other three kinds of set-up modes, respectively:
1) the first insulated support 210 is arranged on the first vibrating diaphragm 205 towards the surface of the first clearance for insulation 208, and the second insulated support 211 is arranged on backboard 204 towards the surface of the second clearance for insulation 109;
2) the first insulated support 210 is arranged on backboard 204 towards the surface of the first clearance for insulation 208, and the second insulated support 211 is arranged on backboard 204 towards the surface of the second clearance for insulation 209;
3) the first insulated support 110 is arranged on backboard 204 towards the surface of the first clearance for insulation 208, and the second insulated support 211 is arranged on the second vibrating diaphragm 206 towards the surface of the second clearance for insulation 209.
Above-described is only embodiments of the present invention, at this, it should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make improvement, but these all belongs to protection scope of the present invention.
Claims (10)
1. a MEMS microphone, comprise and there is the substrate in back of the body chamber and be located at described suprabasil capacitor system, described capacitor system comprises vibrating diaphragm and relative with described vibrating diaphragm and be separately positioned on the first backboard and second backboard of described vibrating diaphragm both sides, described the first backboard and described vibrating diaphragm and the second backboard and described vibrating diaphragm divide at a certain distance and form respectively the first clearance for insulation and the second clearance for insulation, it is characterized in that:
This MEMS microphone also comprises the first insulated support and the second insulated support laying respectively in described the first clearance for insulation and the second clearance for insulation, described the first insulated support is connected with described the first backboard or vibrating diaphragm, and described the second insulated support is connected with described the second backboard or vibrating diaphragm;
Described the first insulated support is 1/3 to 2/3 of point to length in described the second backboard direction along described the first backboard be described the first clearance for insulation on equidirectional width; Described the second insulated support is 1/3 to 2/3 of point to length in described the second backboard direction along described the first backboard be described the second clearance for insulation on equidirectional width.
2. MEMS microphone according to claim 1, is characterized in that, described the first insulated support is connected with described the first backboard, and described the second insulated support is connected with described the second backboard.
3. MEMS microphone according to claim 1, is characterized in that, described the first insulated support is connected with described the first backboard, and described the second insulated support is connected with described vibrating diaphragm.
4. MEMS microphone according to claim 1, is characterized in that, described the first insulated support is connected with described vibrating diaphragm, and described the second insulated support is connected with described the second backboard.
5. MEMS microphone according to claim 1, is characterized in that, described the first insulated support is connected with described vibrating diaphragm, and described the second insulated support is connected with described vibrating diaphragm.
6. a MEMS microphone, comprise and there is the substrate in back of the body chamber and be located at described suprabasil capacitor system, described capacitor system comprises backboard and relative with described backboard and be separately positioned on the first vibrating diaphragm and second vibrating diaphragm of described backboard both sides, described the first vibrating diaphragm and described backboard and the second vibrating diaphragm and described backboard divide at a certain distance and form respectively the first clearance for insulation and the second clearance for insulation, it is characterized in that:
This MEMS microphone also comprises the first insulated support and the second insulated support laying respectively in described the first clearance for insulation and the second clearance for insulation, described the first insulated support is connected with described the first vibrating diaphragm or backboard, and described the second insulated support is connected with described the second vibrating diaphragm or backboard;
Described the first insulated support is 1/3 to 2/3 of point to length in described the second vibrating diaphragm direction along described the first vibrating diaphragm be described the first clearance for insulation on equidirectional width; Described the second insulated support is 1/3 to 2/3 of point to length in described the second vibrating diaphragm direction along described the first vibrating diaphragm be described the second clearance for insulation on equidirectional width.
7. MEMS microphone according to claim 6, is characterized in that, described the first insulated support is connected with described the first vibrating diaphragm, and described the second insulated support is connected with described the second vibrating diaphragm.
8. MEMS microphone according to claim 6, is characterized in that, described the first insulated support is connected with described the first vibrating diaphragm, and described the second insulated support is connected with described backboard.
9. MEM microphone according to claim 6, is characterized in that, described the first insulated support is connected with described backboard, and described the second insulated support is connected with described the second vibrating diaphragm.
10. MEMS microphone according to claim 6, is characterized in that, described the first insulated support is connected with described backboard, and described the second clearance for insulation is connected with described backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310754247.8A CN103702269A (en) | 2013-12-31 | 2013-12-31 | Mems microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310754247.8A CN103702269A (en) | 2013-12-31 | 2013-12-31 | Mems microphone |
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| Publication Number | Publication Date |
|---|---|
| CN103702269A true CN103702269A (en) | 2014-04-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310754247.8A Pending CN103702269A (en) | 2013-12-31 | 2013-12-31 | Mems microphone |
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| Country | Link |
|---|---|
| CN (1) | CN103702269A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105282671A (en) * | 2014-07-24 | 2016-01-27 | 北京卓锐微技术有限公司 | Silicon capacitor microphone capable of working at high sound pressure level |
| CN105323687A (en) * | 2014-07-14 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with polycrystalline silicon layer being provided with bulges and preparation method thereof |
| CN107113503A (en) * | 2014-10-13 | 2017-08-29 | 美商楼氏电子有限公司 | Acoustic equipment with the diaphragm supported at the position of discrete number |
| CN110012409A (en) * | 2018-12-31 | 2019-07-12 | 瑞声科技(新加坡)有限公司 | MEMS microphone manufacturing method |
| CN111924794A (en) * | 2019-05-13 | 2020-11-13 | 无锡华润上华科技有限公司 | Micro-electro-mechanical system device |
| CN112689229A (en) * | 2020-12-29 | 2021-04-20 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN113691916A (en) * | 2021-09-23 | 2021-11-23 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone and preparation method thereof |
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| CN201426176Y (en) * | 2009-05-27 | 2010-03-17 | 瑞声声学科技(常州)有限公司 | Silicon capacitance microphone |
| CN102792715A (en) * | 2009-08-28 | 2012-11-21 | 美国亚德诺半导体公司 | Dual single-crystal backplate microphone system and method of fabricating same |
| CN103402160A (en) * | 2013-07-10 | 2013-11-20 | 瑞声声学科技(深圳)有限公司 | MEMS (micro electro mechanical system) microphone and work control method of MEMS microphone |
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Patent Citations (3)
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| CN201426176Y (en) * | 2009-05-27 | 2010-03-17 | 瑞声声学科技(常州)有限公司 | Silicon capacitance microphone |
| CN102792715A (en) * | 2009-08-28 | 2012-11-21 | 美国亚德诺半导体公司 | Dual single-crystal backplate microphone system and method of fabricating same |
| CN103402160A (en) * | 2013-07-10 | 2013-11-20 | 瑞声声学科技(深圳)有限公司 | MEMS (micro electro mechanical system) microphone and work control method of MEMS microphone |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105323687A (en) * | 2014-07-14 | 2016-02-10 | 北京卓锐微技术有限公司 | Silicon capacitance microphone with polycrystalline silicon layer being provided with bulges and preparation method thereof |
| CN105282671A (en) * | 2014-07-24 | 2016-01-27 | 北京卓锐微技术有限公司 | Silicon capacitor microphone capable of working at high sound pressure level |
| CN107113503A (en) * | 2014-10-13 | 2017-08-29 | 美商楼氏电子有限公司 | Acoustic equipment with the diaphragm supported at the position of discrete number |
| CN107113503B (en) * | 2014-10-13 | 2020-04-03 | 美商楼氏电子有限公司 | MEMS acoustic transducer die |
| US10887700B2 (en) | 2014-10-13 | 2021-01-05 | Knowles Electronics, Llc | Acoustic apparatus with diaphragm supported at a discrete number of locations |
| CN110012409A (en) * | 2018-12-31 | 2019-07-12 | 瑞声科技(新加坡)有限公司 | MEMS microphone manufacturing method |
| WO2020228543A1 (en) * | 2019-05-13 | 2020-11-19 | 无锡华润上华科技有限公司 | Micro-electro-mechanical system device |
| CN111924794A (en) * | 2019-05-13 | 2020-11-13 | 无锡华润上华科技有限公司 | Micro-electro-mechanical system device |
| US11671765B2 (en) | 2019-05-13 | 2023-06-06 | Csmc Technologies Fab2 Co., Ltd. | Micro-Electro-Mechanical System device |
| CN111924794B (en) * | 2019-05-13 | 2024-06-04 | 无锡华润上华科技有限公司 | Micro-electromechanical system device |
| CN112689229A (en) * | 2020-12-29 | 2021-04-20 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN112689229B (en) * | 2020-12-29 | 2022-06-03 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN113691916A (en) * | 2021-09-23 | 2021-11-23 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone and preparation method thereof |
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