CN201426176Y - Silicon capacitance microphone - Google Patents
Silicon capacitance microphone Download PDFInfo
- Publication number
- CN201426176Y CN201426176Y CN2009201322492U CN200920132249U CN201426176Y CN 201426176 Y CN201426176 Y CN 201426176Y CN 2009201322492 U CN2009201322492 U CN 2009201322492U CN 200920132249 U CN200920132249 U CN 200920132249U CN 201426176 Y CN201426176 Y CN 201426176Y
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- CN
- China
- Prior art keywords
- backboard
- vibrating diaphragm
- diaphragm
- electrode
- back plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Abstract
The utility model provides a silicon capacitance microphone which comprises a base with a cavity, a supporting layer, a back plate, a diaphragm, a first electrode and a second electrode, wherein, thesupporting layer is connected with the base, the back plate and the diaphragm are oppositely arranged on the supporting layer, and the first electrode and the second electrode are coupled with the back plate and the diaphragm respectively. Sound holes are formed on the back plate; the diaphragm is positioned between the base and the back plate; and an adsorption preventing device is arranged between the back plate and the diaphragm. Due to the adoption of the silicon capacitance microphone, the difficulty of the manufacturing process is reduced, the cost of the batch production is low, and meanwhile, the back and the diaphragm can be prevented from being attached to each other.
Description
Technical field
The utility model relates to a kind of silicon capacitor microphone, relates in particular to a kind of micro-electro-mechanical microphone.
Background technology
Development along with wireless telecommunications, Global Mobile Phone Users is more and more, the user not only is satisfied with conversation to the requirement of mobile phone, and want high-quality communication effect can be provided, especially at present the development of mobile multimedia technology, the speech quality of mobile phone becomes more important, and the microphone of mobile phone is as the voice pick device of mobile phone, and its design quality directly influences speech quality.
And the microphone of using more and better performances at present is microelectromechanical-systems microphone (Micro-Electro-Mechanical-System Microphone, be called for short MEMS), in the correlation technique, all be that backboard is between vibrating diaphragm and substrate, manufacturing process complexity like this, and it is big to produce cost in batches, and vibrating diaphragm and backboard are attached together easily.Therefore be necessary to provide a kind of novel silicon capacitor microphone.
The utility model content
The technical problem that the utility model need solve provides a kind of difficulty that reduces manufacturing process, produces the low silicon capacitor microphone of cost in batches.
According to the above-mentioned technical problem that needs solution, designed a kind of silicon capacitor microphone, comprise the substrate that is provided with cavity, the supporting layer that links to each other with substrate, be arranged on backboard and vibrating diaphragm on the supporting layer, backboard and vibrating diaphragm are oppositely arranged, and with first electrode and second electrode of backboard and vibrating diaphragm coupling, backboard is provided with hole respectively, described vibrating diaphragm is provided with anti-adsorbent equipment between described backboard and vibrating diaphragm between substrate and backboard.
Preferably, described anti-adsorbent equipment is first projection that is arranged on the backboard plane relative with vibrating diaphragm
Preferably, described anti-adsorbent equipment is second projection that is arranged on the vibrating diaphragm plane relative with backboard.
The beneficial effects of the utility model are: because vibrating diaphragm between substrate and backboard, so reduced technology difficulty, has reduced processing step, reduced mass production cost; Owing on the backboard projection is arranged, prevented that backboard and vibrating diaphragm are attached together simultaneously.
Description of drawings
Fig. 1 is the three-dimensional exploded view of an embodiment of the utility model;
Fig. 2 is the profile that utility model provides an embodiment.
Embodiment
The utility model is described in further detail below in conjunction with drawings and embodiments.
Referring to Fig. 1 and Fig. 2, in the embodiment that the utility model provides, silicon capacitor microphone 1 comprises the substrate 11 that is provided with cavity 16, the supporting layer 14 that links to each other with substrate 11, be arranged on backboard 13 and vibrating diaphragm 12 on the supporting layer 14, backboard 13 is oppositely arranged with vibrating diaphragm 12, and backboard 13 is provided with hole 131, vibrating diaphragm 12 is between backboard 13 and substrate 11, and silicon capacitor microphone 1 also comprises and first electrode (not shown) of backboard 13 couplings and second electrode (not shown) that is coupled with vibrating diaphragm.
Wherein, be provided with the anti-adsorbent equipment that anti-backboard 13 and vibrating diaphragm 12 are attached together between backboard 13 and the vibrating diaphragm 12.Should anti-adsorbent equipment can be arranged on the relative plane of backboard 13 and vibrating diaphragm 12 can protruding 132.This first projection 132 can prevent that vibrating diaphragm 12 and backboard 13 are attached together.Anti-adsorbent equipment can also be arranged on second projection (not shown) on vibrating diaphragm 12 plane relative with backboard, can also be the groove that is separately positioned on vibrating diaphragm 12 or the backboard 13.
Vibrating diaphragm 12 can be circle or rectangle.Also can be other shapes.
Above-mentioned which kind of execution mode no matter, vibrating diaphragm 12 can adopt polycrystalline silicon material.
Above-described only is a kind of execution mode of the present utility model; should be pointed out that for the person of ordinary skill of the art at this, under the prerequisite that does not break away from the utility model creation design; can also make improvement, but these all belong to protection range of the present utility model.
Claims (3)
1, a kind of silicon capacitor microphone, comprise the substrate that is provided with cavity, the supporting layer that links to each other with substrate, be arranged on backboard and vibrating diaphragm on the supporting layer, backboard and vibrating diaphragm are oppositely arranged, respectively with first electrode and second electrode of backboard and vibrating diaphragm coupling, backboard is provided with hole, it is characterized in that: described vibrating diaphragm is provided with anti-adsorbent equipment between described backboard and vibrating diaphragm between substrate and backboard.
2, silicon capacitor microphone according to claim 1 is characterized in that: described anti-adsorbent equipment is first projection that is arranged on the backboard plane relative with vibrating diaphragm
3, silicon capacitor microphone according to claim 1 is characterized in that: described anti-adsorbent equipment is second projection that is arranged on the vibrating diaphragm plane relative with backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201322492U CN201426176Y (en) | 2009-05-27 | 2009-05-27 | Silicon capacitance microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201322492U CN201426176Y (en) | 2009-05-27 | 2009-05-27 | Silicon capacitance microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201426176Y true CN201426176Y (en) | 2010-03-17 |
Family
ID=42025633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201322492U Expired - Lifetime CN201426176Y (en) | 2009-05-27 | 2009-05-27 | Silicon capacitance microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201426176Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102036159A (en) * | 2010-04-12 | 2011-04-27 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon-based microphone |
| CN103402164A (en) * | 2013-08-02 | 2013-11-20 | 上海集成电路研发中心有限公司 | MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof |
| CN103702269A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN103702268A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN106341748A (en) * | 2015-07-17 | 2017-01-18 | 富祐鸿科技股份有限公司 | Electrostatic earphone sounding structure |
| CN110357031A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
-
2009
- 2009-05-27 CN CN2009201322492U patent/CN201426176Y/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102036159A (en) * | 2010-04-12 | 2011-04-27 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon-based microphone |
| CN103402164A (en) * | 2013-08-02 | 2013-11-20 | 上海集成电路研发中心有限公司 | MEMS (micro-electromechanical system) microphone structure and manufacturing method thereof |
| CN103402164B (en) * | 2013-08-02 | 2018-10-16 | 上海集成电路研发中心有限公司 | A kind of MEMS microphone structure and its manufacturing method |
| CN103702269A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN103702268A (en) * | 2013-12-31 | 2014-04-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN103702268B (en) * | 2013-12-31 | 2016-09-14 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN106341748A (en) * | 2015-07-17 | 2017-01-18 | 富祐鸿科技股份有限公司 | Electrostatic earphone sounding structure |
| CN110357031A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN110357031B (en) * | 2018-04-11 | 2022-01-28 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170607 Address after: Singapore Ang Mo Kio 65 Street No. 10 techpoint Building 1 floor, No. 8 Co-patentee after: AAC Acoustic Technologies (Changzhou) Co., Ltd. Patentee after: AAC Technologies (Singapore) Co., Ltd. Address before: Wujin Nanxiashu town Jiangsu city Changzhou province 213167 Co-patentee before: AAC Acoustic Technologies (Shenzhen) Co., Ltd. Patentee before: AAC Acoustic Technologies (Changzhou) Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100317 |
|
| CX01 | Expiry of patent term |