CN102036159A - Manufacturing method of silicon-based microphone - Google Patents
Manufacturing method of silicon-based microphone Download PDFInfo
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- CN102036159A CN102036159A CN2010101483167A CN201010148316A CN102036159A CN 102036159 A CN102036159 A CN 102036159A CN 2010101483167 A CN2010101483167 A CN 2010101483167A CN 201010148316 A CN201010148316 A CN 201010148316A CN 102036159 A CN102036159 A CN 102036159A
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- vibrating diaphragm
- layer
- silica
- support column
- based microphone
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Abstract
The invention provides a manufacturing method of a silicon-based microphone. In a manufacturing process, a layer of supporting post which passes through a sacrifice layer and is connected with a diaphragm and a back plate is arranged, so that the pull-in phenomenon between the diaphragm and the back plate after the release of the sacrifice layer can be avoided. The manufacturing method has high yield and low cost, can improve the performance of a product and can be widely applied to production and using.
Description
[technical field]
The present invention relates to a kind of manufacture method of microphone, relate in particular to a kind of manufacture method that can be widely used in the silica-based microphone of portable devices such as mobile phone.
[background technology]
Development along with wireless telecommunications, Global Mobile Phone Users is more and more, the user not only is satisfied with conversation to the requirement of mobile phone, and want high-quality communication effect can be provided, especially at present the development of mobile multimedia technology, the speech quality of mobile phone becomes more important, and the microphone of mobile phone is as the voice pick device of mobile phone, and its design quality directly influences speech quality.
And the microphone of using more and better performances at present is microelectromechanical-systems microphone (Micro-Electro-Mechanical-System Microphone), claims silicon microphone again.Its encapsulation volume is littler than traditional electret microphone, uses more and more wider.
The silica-based microphone of correlation technique, it comprises substrate, is arranged on suprabasil vibrating diaphragm, and the backboard that keep at a certain distance away relative with vibrating diaphragm, forms air-gap between backboard and the vibrating diaphragm.In manufacturing process, air-gap normally adopts the mode of filling sacrifice layer to form, but when releasing sacrificial layer, is easy to cause the vibrating diaphragm adhesive to backboard and influence the rate of finished products and the performance of product.
Therefore, be necessary to provide a kind of new silicon microphone manufacture method to solve above-mentioned problem.
[summary of the invention]
The technical problem that the present invention need solve is to provide a kind of rate of finished products height, makes the manufacture method of the silica-based microphone of properties of product raising.
The present invention solves above-mentioned technical problem by such technical scheme:
A kind of manufacture method of silica-based microphone, wherein, step comprises as follows:
A, provide a silicon base;
B, on silicon base deposition vibrating diaphragm layer;
C, on the vibrating diaphragm layer deposition of sacrificial layer, and remove its edge part by photoetching;
D, on vibrating diaphragm and sacrifice layer, deposit backboard, make the top of backboard form the hole some by photoetching;
E, in the sacrifice layer place etching relative with the sound hole, make it form connect the groove of sacrifice layer to vibrating diaphragm;
F, in groove, deposit support column, make support column connect vibrating diaphragm and backboard;
G, silicon base is carried out etching, to form cavity;
H, releasing sacrificial layer;
I, release support column.
As a kind of improvement of the present invention, described support column is made by photoresist or polymethyl methacrylate or the corrosion-resistant organic material of polyimides.
As a kind of improvement of the present invention, the quantity of described support column is two.
As a kind of improvement of the present invention, the periphery of described vibrating diaphragm layer is etched with the leak that runs through vibrating diaphragm.
As a kind of improvement of the present invention, the described vibrating diaphragm layer deposit spathic silicon and the phosphide that mixes thereon form.
The present invention has the following advantages: owing in technology is made, added in order to connect the support column of vibrating diaphragm and backboard, just can avoid the phenomenon of vibrating diaphragm and backboard adhesive occurring, thereby improving rate of finished products greatly when releasing sacrificial layer, be beneficial to production; In addition, can also improve the performance of product.
[description of drawings]
Fig. 1 is the schematic diagram behind silica-based microphone releasing sacrificial layer of the present invention and the supporting layer.
Fig. 2 is silica-based microphone releasing sacrificial layer of the present invention and the preceding schematic diagram of supporting layer.
[embodiment]
The invention will be further described below in conjunction with drawings and embodiments.
As shown in Figure 1, silica-based microphone 1 comprise silicon base 10, be arranged at vibrating diaphragm 11 on the silicon base 10, and the backboard 12 that keep at a certain distance away relative with vibrating diaphragm 11.Wherein, form the gap between vibrating diaphragm 11 and the backboard 12.Backboard 12 is provided with hole 122.Substrate 10 is provided with back of the body chamber 100.
With reference to Fig. 2, the manufacturing step of silica-based microphone 1 is as follows in the lump:
A, provide a silicon base 10;
B, on silicon base 10 the deposit spathic silicon layer, the phosphide that mixes again carries out thermal diffusion and annealing, to form vibrating diaphragm layer 11;
C, at the peripheral etching leak 110 of vibrating diaphragm layer 11;
D, on vibrating diaphragm layer 11 deposition of sacrificial layer 13, and remove its edge part by photoetching, make it protrude in the surface of vibrating diaphragm 11;
E, on vibrating diaphragm layer 11 and sacrifice layer 13 deposition backsheet layer 12, make on the backboard 12 by photoetching to form some holes 122, make it connect backsheet layer;
F, on sacrifice layer 13, the position etching relative with sound hole 122, in the present embodiment, selection sound hole 122a and 122b carry out etching in two sound holes, make the sacrifice layer relative form groove 130, and make groove 130 connect sacrifice layer 13 to vibrating diaphragm layer 11 with sound hole 122a harmony hole 122b;
G, in groove 130 deposition support column 14, make support column 14 pass hole 122a harmony hole 122b and run through sacrifice layer 13, thereby connect with vibrating diaphragm 11 and link to each other with backboard 12 to vibrating diaphragm 11;
H, with photoresist silicon base 10 is carried out etching, on silicon base 10, form cavity 100;
The mixture of I, employing hydrofluoric acid and ammonium fluoride comes releasing sacrificial layer 13;
J, discharge support column 14, finally obtain the silica-based microphone shown in Fig. 1 by the oxygen plasma etching.
In the present embodiment, the quantity of support column 14 is two, makes by photoresist or corrosion-resistant organic material such as polymethyl methacrylate or polyimides.
To sum up,, just can avoid when releasing sacrificial layer, the phenomenon of vibrating diaphragm and backboard adhesive occurring, thereby improving rate of finished products greatly, be beneficial to production owing in technology is made, added in order to connect the support column of vibrating diaphragm and backboard; In addition, can also improve the performance of product.
Above-described only is embodiments of the present invention, should be pointed out that for the person of ordinary skill of the art at this, under the prerequisite that does not break away from the invention design, can also make improvement, but these all belongs to protection scope of the present invention.
Claims (5)
1. the manufacture method of a silica-based microphone, it is characterized in that: the step of this method comprises as follows:
A, provide a silicon base;
B, on silicon base deposition vibrating diaphragm layer;
C, on the vibrating diaphragm layer deposition of sacrificial layer, and remove its edge part by photoetching;
D, on vibrating diaphragm and sacrifice layer, deposit backboard, make the top of backboard form the hole some by photoetching;
E, on sacrifice layer, the position etching relative with the sound hole makes it form connect the groove of sacrifice layer to vibrating diaphragm;
F, in groove, deposit support column, make support column connect vibrating diaphragm and backboard;
G, silicon base is carried out etching, to form cavity;
H, releasing sacrificial layer;
I, release support column.
2. the manufacture method of silica-based microphone according to claim 1 is characterized in that: described support column is made by photoresist or polymethyl methacrylate or the corrosion-resistant organic material of polyimides.
3. the manufacture method of silica-based microphone according to claim 1, it is characterized in that: the quantity of described support column is two.
4. the manufacture method of silica-based microphone according to claim 1, it is characterized in that: the periphery of described vibrating diaphragm layer is etched with the leak that runs through vibrating diaphragm.
5. the manufacture method of silica-based microphone according to claim 1 is characterized in that: described vibrating diaphragm layer is deposit spathic silicon and mixes phosphide thereon and form.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101483167A CN102036159A (en) | 2010-04-12 | 2010-04-12 | Manufacturing method of silicon-based microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101483167A CN102036159A (en) | 2010-04-12 | 2010-04-12 | Manufacturing method of silicon-based microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102036159A true CN102036159A (en) | 2011-04-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101483167A Pending CN102036159A (en) | 2010-04-12 | 2010-04-12 | Manufacturing method of silicon-based microphone |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108217577A (en) * | 2016-12-22 | 2018-06-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
| CN110292792A (en) * | 2019-06-14 | 2019-10-01 | 瑞声科技(新加坡)有限公司 | Inviscid etching drying means |
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| CN1694575A (en) * | 2004-05-09 | 2005-11-09 | 美律实业股份有限公司 | Capacitor silcion-base microphone and its manufacturing method |
| CN101064970A (en) * | 2006-04-25 | 2007-10-31 | 佳乐电子股份有限公司 | No-cutting manufacture method for producing wafer of capacitance silicon micro-microphone |
| CN101208990A (en) * | 2005-04-25 | 2008-06-25 | 模拟设备公司 | Micromachined microphone and multisensor and method for producing same |
| CN101353152A (en) * | 2007-07-24 | 2009-01-28 | 罗姆股份有限公司 | MEMS sensor and manufacturing method thereof |
| CN201426176Y (en) * | 2009-05-27 | 2010-03-17 | 瑞声声学科技(常州)有限公司 | Silicon capacitance microphone |
-
2010
- 2010-04-12 CN CN2010101483167A patent/CN102036159A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694575A (en) * | 2004-05-09 | 2005-11-09 | 美律实业股份有限公司 | Capacitor silcion-base microphone and its manufacturing method |
| CN101208990A (en) * | 2005-04-25 | 2008-06-25 | 模拟设备公司 | Micromachined microphone and multisensor and method for producing same |
| CN101064970A (en) * | 2006-04-25 | 2007-10-31 | 佳乐电子股份有限公司 | No-cutting manufacture method for producing wafer of capacitance silicon micro-microphone |
| CN101353152A (en) * | 2007-07-24 | 2009-01-28 | 罗姆股份有限公司 | MEMS sensor and manufacturing method thereof |
| CN201426176Y (en) * | 2009-05-27 | 2010-03-17 | 瑞声声学科技(常州)有限公司 | Silicon capacitance microphone |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108217577A (en) * | 2016-12-22 | 2018-06-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
| CN108217577B (en) * | 2016-12-22 | 2020-09-08 | 中芯国际集成电路制造(上海)有限公司 | MEMS device, preparation method and electronic device |
| CN110292792A (en) * | 2019-06-14 | 2019-10-01 | 瑞声科技(新加坡)有限公司 | Inviscid etching drying means |
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| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110427 |