CN201491260U - Silicon condenser microphone - Google Patents
Silicon condenser microphone Download PDFInfo
- Publication number
- CN201491260U CN201491260U CN2009201325965U CN200920132596U CN201491260U CN 201491260 U CN201491260 U CN 201491260U CN 2009201325965 U CN2009201325965 U CN 2009201325965U CN 200920132596 U CN200920132596 U CN 200920132596U CN 201491260 U CN201491260 U CN 201491260U
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- CN
- China
- Prior art keywords
- backboard
- vibrating diaphragm
- electrode
- substrate
- capacitor microphone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Abstract
The utility model provides a silicon condenser microphone. The silicon condenser microphone comprises a substrate, a rear panel, a vibration diaphragm, a first electrode and a second electrode, wherein the rear panel is provided with a cavity; the rear panel and the vibration diaphragm are oppositely arranged on the substrate; the first electrode and the second electrode are coupled with the rear panel and the vibration diaphragm respectively; the rear panel is provided with sound holes; and the thickness of the rear panel is at least more than 1.5 times that of the vibration diaphragm. Acoustic properties of the silicon condenser microphone can be improved.
Description
Technical field
The utility model relates to a kind of silicon capacitor microphone, relates in particular to a kind of micro-electro-mechanical microphone.
Background technology
Development along with wireless telecommunications, Global Mobile Phone Users is more and more, the user not only is satisfied with conversation to the requirement of mobile phone, and want high-quality communication effect can be provided, especially at present the development of mobile multimedia technology, the speech quality of mobile phone becomes more important, and the microphone of mobile phone is as the voice pick device of mobile phone, and its design quality directly influences speech quality.
And the microphone of using more and better performances at present is microelectromechanical-systems microphone (Micro-Electro-Mechanical-System Microphone is called for short MEMS), and in the correlation technique, the MEMS microphone comprises substrate, backboard and vibrating diaphragm.When sound wave acted on vibrating diaphragm and backboard simultaneously, backboard produced slight vibration next time in the effect of sound wave.And the micro-structural physical dimension of MEMS is a micron dimension, and the slight vibration of backboard under acoustic wave action can produce considerable influence to acoustical behavior.So, be necessary to provide a kind of silicon capacitor microphone that can improve acoustical behavior.
The utility model content
The technical problem that the utility model need solve provides the improved silicon capacitor microphone of a kind of acoustical behavior.
According to the above-mentioned technical problem that needs solution, designed a kind of silicon capacitor microphone, comprise the substrate that is provided with cavity, be arranged on suprabasil backboard and vibrating diaphragm, backboard and vibrating diaphragm are oppositely arranged, respectively with first electrode and second electrode of backboard and vibrating diaphragm coupling, backboard is provided with hole, and the thickness of described backboard is at least 1.5 times of vibrating diaphragm thickness.
Preferably, described vibrating diaphragm is between described backboard and substrate.
Preferably, between described vibrating diaphragm and backboard, be provided with anti-adsorbent equipment.
Preferably, described anti-adsorbent equipment is first projection that is arranged on the backboard plane relative with vibrating diaphragm
Preferably, described anti-adsorbent equipment is second projection that is arranged on the vibrating diaphragm plane relative with backboard.
The beneficial effects of the utility model are: because the thickness of backboard is 1.5 times of vibrating diaphragm thickness at least, when sound wave acts on vibrating diaphragm and backboard simultaneously, the slight vibration of backboard under the effect of sound wave is less to the acoustic characteristic influence, thereby has improved the acoustic characteristic of silicon capacitor microphone.
Because vibrating diaphragm between substrate and backboard, so reduced technology difficulty, has reduced processing step, has reduced mass production cost; Owing between backboard and the vibrating diaphragm anti-adsorbent equipment is arranged, promptly on the backboard or on the vibrating diaphragm projection is arranged, prevented that backboard and vibrating diaphragm are attached together.
Description of drawings
Fig. 1 is the three-dimensional exploded view of an embodiment of the utility model;
Fig. 2 is the profile that utility model provides an embodiment.
Embodiment
The utility model is described in further detail below in conjunction with drawings and embodiments.
Referring to Fig. 1 and Fig. 2, in the embodiment that the utility model provides, silicon capacitor microphone 1 comprises the substrate 11 that is provided with cavity 16, the supporting layer 14 that links to each other with substrate 11, be arranged on backboard 13 and vibrating diaphragm 12 on the supporting layer 14, backboard 13 is oppositely arranged with vibrating diaphragm 12, and backboard 13 is provided with hole 131, vibrating diaphragm 12 is between backboard 13 and substrate 11, and silicon capacitor microphone 1 also comprises and first electrode (not shown) of backboard 13 couplings and second electrode (not shown) that is coupled with vibrating diaphragm.
Wherein, be provided with the anti-adsorbent equipment that anti-backboard 13 and vibrating diaphragm 12 are attached together between backboard 13 and the vibrating diaphragm 12.Should anti-adsorbent equipment can be arranged on first projection 132 on the relative plane of backboard 13 and vibrating diaphragm 12.This first projection 132 can prevent that vibrating diaphragm 12 and backboard 13 are attached together.Anti-adsorbent equipment can also be arranged on second projection (not shown) on vibrating diaphragm 12 plane relative with backboard, can also be the groove that is separately positioned on vibrating diaphragm 12 or the backboard 13.
Vibrating diaphragm 12 can be circle or rectangle.Also can be other shapes.Vibrating diaphragm 12 can also can be that backboard 13 is between vibrating diaphragm 12 and substrate 11 between substrate 11 and backboard 13.
Above-mentioned which kind of execution mode no matter, vibrating diaphragm 12 can adopt polycrystalline silicon material.
Above-described only is a kind of execution mode of the present utility model; should be pointed out that for the person of ordinary skill of the art at this, under the prerequisite that does not break away from the utility model creation design; can also make improvement, but these all belong to protection range of the present utility model.
Claims (5)
1. silicon capacitor microphone, comprise the substrate that is provided with cavity, be arranged on suprabasil backboard and vibrating diaphragm, backboard and vibrating diaphragm are oppositely arranged, respectively with first electrode and second electrode of backboard and vibrating diaphragm coupling, backboard is provided with hole, it is characterized in that: the thickness of described backboard is at least 1.5 times of vibrating diaphragm thickness.
2. silicon capacitor microphone according to claim 1 is characterized in that: described vibrating diaphragm is between described backboard and substrate.
3. silicon capacitor microphone according to claim 1 and 2 is characterized in that: be provided with anti-adsorbent equipment between described vibrating diaphragm and backboard.
4. silicon capacitor microphone according to claim 3 is characterized in that: described anti-adsorbent equipment is first projection that is arranged on the backboard plane relative with vibrating diaphragm.
5. silicon capacitor microphone according to claim 3 is characterized in that: described anti-adsorbent equipment is second projection that is arranged on the vibrating diaphragm plane relative with backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201325965U CN201491260U (en) | 2009-06-05 | 2009-06-05 | Silicon condenser microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201325965U CN201491260U (en) | 2009-06-05 | 2009-06-05 | Silicon condenser microphone |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201491260U true CN201491260U (en) | 2010-05-26 |
Family
ID=42430124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201325965U Expired - Lifetime CN201491260U (en) | 2009-06-05 | 2009-06-05 | Silicon condenser microphone |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201491260U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
-
2009
- 2009-06-05 CN CN2009201325965U patent/CN201491260U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103402163A (en) * | 2013-07-26 | 2013-11-20 | 歌尔声学股份有限公司 | Shock-resistant silicon-based micro-electro mechanical system (MEMS) microphone and manufacturing method thereof |
| CN103402163B (en) * | 2013-07-26 | 2016-06-15 | 歌尔声学股份有限公司 | Shock resistance silicon base MEMS microphone and manufacture method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100526 |