CN1694575A - Capacitor silcion-base microphone and its manufacturing method - Google Patents
Capacitor silcion-base microphone and its manufacturing method Download PDFInfo
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- CN1694575A CN1694575A CN 200410042170 CN200410042170A CN1694575A CN 1694575 A CN1694575 A CN 1694575A CN 200410042170 CN200410042170 CN 200410042170 CN 200410042170 A CN200410042170 A CN 200410042170A CN 1694575 A CN1694575 A CN 1694575A
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Abstract
This invention relates to a condenser silicon-base micro-microphone processed with a micro-electromechanical process, which contains a back board wafer with a sound hole and a vibration wafer with vibrating film to form said micro-microphone by combining said two wafers.
Description
Technical field
The present invention is a kind of capacitance silicon-based micro-microphone and manufacture method thereof, and it is to be bonded with each other by a back board wafer and a vibration wafer to form.
Background technology
In recent years, the development trend of microphone products integral body except require compact, more necessary possess better sensitivity, stability and output performance, can satisfy client's demand, makes therefore that also the structural design of micro-microphone is complicated day by day and diversified.
General existing microphone is to belong to the monocrystalline chip microphone that is made of single wafer, its manufacturing method thereof is to finish a backboard with Film forming method earlier, some sound holes, one pedestal, an and sacrifice layer that is positioned between backboard and pedestal, carry out the etching of this pedestal again, and remove this sacrifice layer to form a vibrating diaphragm, therefore the size design of this microphone will be subjected to the restriction of this sacrificial layer thickness, in case desire changes sacrificial layer thickness, then successive process also must be revised in the lump, otherwise the residual stress of end-results can be different, to have influence on the characteristic of this vibrating diaphragm, cause the elasticity that designs very little, also thereby be difficult to the sensitivity and output performance that reach best.
In addition, another kind of existing microphone is to belong to the wafer engagement type microphone that is made of at least two wafers, it is to use the processing that the body procedure for processing is finished individual wafer earlier, utilize the wafer joining technique to be assembled joint subsequently, in order to finish the making of microphone, not only processing procedure is significantly simplified, and can change the gap between two wafers simultaneously easily, and does not influence the material behavior of this microphone.
Yet general engagement type microphone is made up of the wafer more than three mostly, still has certain complexity on the processing procedure, and in addition, the electrode routing zone of general wafer engagement type microphone can't be exposed, and causes the difficulty of follow-up routing processing procedure to increase.
Summary of the invention
Main purpose of the present invention is to provide a kind of capacitance silicon-based micro-microphone and method for making thereof, its simple structure, and processing procedure is significantly simplified, thereby has lower cost of manufacture.
Of the present invention time a purpose is to provide a kind of capacitance silicon-based micro-microphone and method for making thereof, its structure Design elasticity height, thereby can under undersized requirement, satisfy various designing requirement.
Therefore, the present invention provides a kind of capacitance silicon-based micro-microphone, and it includes a back board wafer, and a vibration wafer, wherein:
This back board wafer be have relative one first with one second, wherein this first face is to be provided with at least one sound hole, and first electrode that is electrically connected with this sound hole, this second resonance trough that then offers this sound hole of connection.
This vibration wafer is to be provided with a pedestal, and one is covered in the vibrating membrane of this base-plates surface, and one and second electrode that is electrically connected of this vibrating membrane, in addition, this pedestal more offers one and is communicated with this vibrating membrane and extraneous source of sound groove;
And this two wafer is to engage in this first mode corresponding to this vibrating membrane, and this first electrode and this second electrode is finished be electrically connected.
Method for making of the present invention then includes the following step:
A. make this back board wafer and this vibration wafer;
B. should vibrate wafer and engage, promptly finish the making of micro-microphone of the present invention with this back board wafer.
In addition, method for making of the present invention more can include a cutting step c, so that the routing zone of this first electrode exposes, so that follow-up operation is carried out.
Description of drawings
In order to describe structure of the present invention and characteristics place in detail, lift following preferred embodiment now and cooperate graphic explanation as after, wherein:
Fig. 1 is the cutaway view of microphone of the present invention;
Fig. 2 is the making flow chart of back board wafer of the present invention;
Fig. 3 is the making flow chart that the present invention vibrates wafer; And
Fig. 4 is back board wafer of the present invention and the cutaway view that vibrates after wafer engages.
Embodiment
At first, see also shown in Figure 1, a kind of capacitance silicon-based micro-microphone 10 provided by the present invention, it is to consist predominantly of a back board wafer 20, and a vibration wafer 30 that is positioned at these back board wafer 20 belows, wherein:
This back board wafer 20 is to have relative one first 21 and 1 second 22, wherein this first 21 is to be provided with an epitaxial layer 23, the conducting shell 24 of one doping P+ ion, a plurality of sound holes 25 that penetrate this epitaxial layer 23 and this conducting shell 24, and one and first electrode 26 that is electrically connected of this conducting shell 24, this second 22 then offers a resonance trough 27 that is communicated with these sound holes 25.See also Fig. 2 again, the method for making of this back board wafer 20 is to include the following step:
A. the wafer A that provides a surface to have this epitaxial layer 23, the surface of again the P+ ion being implanted this epitaxial layer 23 is to form this conducting shell 24;
B. (lnductively Coupled Plasma ICP) etches the sound hole 25 that these penetrate this conducting shell 24 and this epitaxial layer 23 to utilize the induction coupled plasma;
C. utilize the thermal oxidation processing procedure to form one first oxide layer 281 and one second oxide layer 282 respectively in first 21 and second 22 of this back board wafer 20;
D. this first oxide layer 28 is offered one and be communicated with this conducting shell 24 and extraneous contact opening 283, form this first electrode 26 that is electrically connected with this conducting shell 24 in the surface of this first oxide layer 281 again, and 2 metal bond points 29;
E. these second oxide layer, 282 parts are removed, and etched this resonance trough 27, remove first oxide layer 281 and the second remaining oxide layer 282 of these sound hole 25 bottoms subsequently in the position of corresponding these sound holes 25.
So can finish the making of this back board wafer 20, wherein the hot oxygen processing procedure of step c is to have three kinds of effects: one is electric isolated for finishing, two for utilizing the tempering after its heating process can be finished the ion implantation, the 3rd, the etching stopping layer in the time of can forming this resonance trough 27 of etching is to improve the yield of product.
This vibration wafer 30 is to be provided with a pedestal 31, one is covered in the vibrating membrane 32 on these pedestal 31 surfaces, and one and second electrode 33 that is electrically connected of this vibrating membrane 32, in addition, this vibrating membrane 32 is the oxide layers 34 by silicon monoxide (SiO) material, the dielectric layer 35 of one silicon nitride (SiN) material, and the conductive layer 36 of a metal material is formed by stacking, and this pedestal 31 more offers one and is communicated with this vibrating membrane 32 and extraneous source of sound groove 37.
See also shown in Figure 3ly again, the method for making of this vibration wafer 30 is to include following steps:
A., one wafer B is provided, and forms this oxide layer 34 and this dielectric layer 35 in regular turn in the surface of this wafer B;
B. the oxide layer 34 of this wafer B one side is removed with dielectric layer 35 parts, and formed this source of sound groove 37 and this vibrating membrane 32 with the etching of potassium hydroxide (KOH) solution;
C. form this metal conducting layer 36 in the surface of this vibrating membrane 32, and form this second electrode 33 and 2 metal bond points 38 in the surface of this dielectric layer 35.
Therefore, finish the making of this back board wafer 20 and this vibration wafer 30 after, get final product this two wafer 20﹠amp; 30 metal bond point 29﹠amp; 38 is corresponding, and (Surhce MountTechnology SMT) engages, and finishes being electrically connected of this first electrode 26 and this second electrode 33 simultaneously with the surface attachment technology.
After the joint assembling was finished, as shown in Figure 4, this vibration wafer 30 also can etch a V-type groove 39 simultaneously in step b, thereby can select for use suitable cutter to cut, the routing zone of this first electrode 26 is exposed, and the processing procedure that not only helps follow-up pin routing carries out, and more can simplify production process.
Capacitance silicon-based micro-microphone of the present invention is to have simple making flow process to reduce cost of manufacture, possesses elasticity in the design, and the etching operation is equipped with etching stopping layer, need not continuing to use the practice of utilizing the etch sacrificial layer over, and can improve the yield of production.In addition, utilize the part cutting to make the more effectively line contacts of solving the over problem that can't expose of the practice that the routing zone exposes.
What deserves to be mentioned is; back board wafer of the present invention is that the metal bond point of not carried with previous embodiment exceeds with the juncture of vibration wafer; also it can be changed into the metal bond circle, or its equivalent wafer joint method, all should fall in the protection range of this patent.
Claims (14)
1. capacitance silicon-based micro-microphone is characterized in that including:
One back board wafer, be have relative one first with one second, wherein this first face is to be provided with at least one sound hole, and first electrode that is electrically connected with this sound hole, this second resonance trough that then offers this sound hole of connection; And
One vibration wafer is to be provided with a pedestal, and one covers the vibrating membrane of this base-plates surface of son, and second electrode that is electrically connected with this vibrating membrane, and in addition, this pedestal more offers a source of sound groove that is communicated with this vibrating membrane and the external world;
Wherein: this two wafer is to engage in this first mode corresponding to this vibrating membrane, and this first electrode and this second electrode is finished be electrically connected.
2. according to the described capacitance silicon-based micro-microphone of claim 1, first face that it is characterized in that this back board wafer is to be provided with an epitaxial layer, and the conducting shell of a doping P+ ion, and this first electrode is to be electrically connected with this conducting shell.
3. according to the described capacitance silicon-based micro-microphone of claim 1, it is characterized in that this vibrating membrane is the composite construction of forming for a dielectric layer and a conductive layer.
4. according to the described capacitance silicon-based micro-microphone of claim 3, it is characterized in that this dielectric layer is to be silicon nitride (SiN) material.
5. according to the described capacitance silicon-based micro-microphone of claim 3, wherein this conductive layer is to be metal material.
6. according to the described capacitance silicon-based micro-microphone of claim 1, first face that it is characterized in that described this back board wafer is to be provided with two metal bond point, and the diaphragm face of this vibration wafer also is provided with two metal bond point, because of this back board wafer and this vibration wafer are the surface attachment technology to engage.
7. according to the described capacitance silicon-based micro-microphone of claim 1, first face that it is characterized in that described this back board wafer is to be provided with a metal bond circle, and the diaphragm face of this vibration wafer also is provided with a metal bond circle, in order to be bonded with each other.
8. according to the described capacitance silicon-based micro-microphone of claim 1, the pedestal that it is characterized in that this vibration wafer is to cut, and this first electrode is exposed.
9. the method for making of a capacitance silicon-based micro-microphone is characterized in that including the following step:
A. make a back board wafer and a vibration wafer;
Wherein, the method for making of this back board wafer is to include following steps:
(a) wafer that provides a surface to have an epitaxial layer, the surface of again the P+ ion being implanted this epitaxial layer is to form a conducting shell;
(b) etching or be processed to form at least one sound hole that penetrates this conducting shell and this epitaxial layer;
(c) utilize the thermal oxidation processing procedure in this epitaxial layer surface and the inner formation of this sound hole one first oxide layer, and form one second oxide layer in the another side of relative this epitaxial layer;
(d) this first oxide layer is offered one and be communicated with this conducting shell and extraneous contact opening, again in the formation one of the surface of this first oxide layer and contacted metal electrode in this diffusion region and two metal bond point;
(e) this second oxide layer is etched a resonance trough to position that should sound hole, remove first oxide layer and the second remaining oxide layer of this sound hole bottom immediately;
The method for making of this vibration wafer then includes the following step:
(a) provide a wafer, and form an oxide layer and a dielectric layer in regular turn in the surface of this wafer;
(b) oxide layer and the dielectric layer of this wafer one side are partly removed, be etched to this wafer relatively in addition side oxide layer and form a source of sound groove, the bottom of this source of sound groove then forms a vibrating membrane simultaneously;
(c) form a metal conducting layer in the surface of this vibrating membrane, and form one second electrode in the surface of this dielectric layer, and two metal bond point;
The metal bond point that b. will vibrate wafer engages corresponding to the metal bond point of this back board wafer, finishes being electrically connected of this first electrode and this second electrode simultaneously.
10. according to the method for making of the described capacitance silicon-based micro-microphone of claim 9, it is characterized in that adopting dry-etching.
11., it is characterized in that it being to adopt induction coupled plasma etching or the ion(ic) etching of living according to the method for making of the described capacitance silicon-based micro-microphone of claim 10.
12., it is characterized in that it being to adopt Wet-type etching according to the method for making of the described capacitance silicon-based micro-microphone of claim 9.
13., it is characterized in that this dielectric layer is to be silicon nitride according to the method for making of the described capacitance silicon-based micro-microphone of claim 9.
14., it is characterized in that more including a step c: should vibrate wafer and carry out the part cutting and this first electrode partly is exposed outside according to the method for making of the described capacitance silicon-based micro-microphone of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200410042170 CN1694575A (en) | 2004-05-09 | 2004-05-09 | Capacitor silcion-base microphone and its manufacturing method |
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| CN 200410042170 CN1694575A (en) | 2004-05-09 | 2004-05-09 | Capacitor silcion-base microphone and its manufacturing method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102036159A (en) * | 2010-04-12 | 2011-04-27 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon-based microphone |
| CN101828409B (en) * | 2007-10-05 | 2012-09-05 | 山东共达电声股份有限公司 | Silicon microphone with enhanced impact test structure using bonding wires |
| CN102740203A (en) * | 2011-04-06 | 2012-10-17 | 美律实业股份有限公司 | Combined micro-electrical-mechanical-system microphone and manufacturing method of same |
| CN106535072A (en) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | MEMS microphone chip and MEMS microphone |
| CN107302734A (en) * | 2016-04-15 | 2017-10-27 | 美律电子(深圳)有限公司 | Directive property recording module |
| CN108464017A (en) * | 2016-01-15 | 2018-08-28 | 全球感测科技股份有限公司 | microphone and microphone manufacturing method |
| CN108882132A (en) * | 2017-05-11 | 2018-11-23 | 现代自动车株式会社 | microphone and its manufacturing method |
-
2004
- 2004-05-09 CN CN 200410042170 patent/CN1694575A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101828409B (en) * | 2007-10-05 | 2012-09-05 | 山东共达电声股份有限公司 | Silicon microphone with enhanced impact test structure using bonding wires |
| CN102036159A (en) * | 2010-04-12 | 2011-04-27 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon-based microphone |
| CN102740203A (en) * | 2011-04-06 | 2012-10-17 | 美律实业股份有限公司 | Combined micro-electrical-mechanical-system microphone and manufacturing method of same |
| CN108464017A (en) * | 2016-01-15 | 2018-08-28 | 全球感测科技股份有限公司 | microphone and microphone manufacturing method |
| CN108464017B (en) * | 2016-01-15 | 2020-07-28 | 全球感测科技股份有限公司 | Microphone and method for manufacturing microphone |
| CN107302734A (en) * | 2016-04-15 | 2017-10-27 | 美律电子(深圳)有限公司 | Directive property recording module |
| CN106535072A (en) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | MEMS microphone chip and MEMS microphone |
| CN108882132A (en) * | 2017-05-11 | 2018-11-23 | 现代自动车株式会社 | microphone and its manufacturing method |
| CN108882132B (en) * | 2017-05-11 | 2021-07-06 | 现代自动车株式会社 | Microphone and method for manufacturing the same |
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