CN104080032A - Vapor-proof capacitive mini microphone and preparation method thereof - Google Patents

Vapor-proof capacitive mini microphone and preparation method thereof Download PDF

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Publication number
CN104080032A
CN104080032A CN201310097521.9A CN201310097521A CN104080032A CN 104080032 A CN104080032 A CN 104080032A CN 201310097521 A CN201310097521 A CN 201310097521A CN 104080032 A CN104080032 A CN 104080032A
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China
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vibrating diaphragm
doped substrate
insulating layer
capacitive
waterproof
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CN201310097521.9A
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Chinese (zh)
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万蔡辛
杨少军
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BEIJING ACUTI MICROSYSTEMS Co Ltd
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BEIJING ACUTI MICROSYSTEMS Co Ltd
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Publication of CN104080032A publication Critical patent/CN104080032A/en
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Abstract

The invention provides a vapor-proof capacitive mini microphone and a preparation method thereof. The vapor-proof capacitive mini microphone comprises a doped substrate, at least one waterproof insulation layer, a sacrificial layer, a vibrating diaphragm and an acoustic cavity, wherein the at least one waterproof insulation layer and the sacrificial layer are deposited above the doped substrate and the vibrating diaphragm is deposited above the waterproof insulation layer and the sacrificial layer and a central area of the doped substrate. A capacitor is formed after a gap is formed between the vibrating diaphragm and the doped substrate through removing the sacrificial layer. The acoustic cavity is arranged below the vibrating diaphragm and penetrates through the whole doped substrate in the central area which is corresponding to the disposed vibrating diaphragm. The preparation method of the vapor-proof capacitive mini silicon microphone has the advantages of high rate of finished products, low cost and easy in technical implementation. The small size requirement is met, corresponding steps of subsequent assembly processes are reduced, and the vapor-proof capacitive mini microphone is suitable for mass production.

Description

Capacitive tiny microphone of a kind of waterproof vapour and preparation method thereof
Technical field
The present invention relates to a kind of silicon microphone technical field, particularly a kind of capacitance type minitype silicon microphone and preparation method thereof, specifically capacitance type minitype silicon microphone of a kind of waterproof vapour that utilizes MEMS technology and preparation method thereof.
Background technology
Micro electronmechanical (MEMS micro-electro-mechanical system) microphone or claim silicon microphone because its volume is little, be suitable for the sound collection that the advantages such as surface mount are widely used in tablet electronic device, such as: mobile phone, MP3, recording pen and monitoring equipment etc.In the practical application of silicon micro-microphone, when meeting low-cost and high performance requirements, generally according to actual service condition, also require it to there is dust and water protection function, this becomes a difficult problem of silicon micro-microphone design.
Traditional silicon micro-microphone dustproof and waterproof design generally by covering waterproof membrane on sound hole, this design can realize good dust-proof effect, if but do not adopt fine and close waterproof membrane, even if adopt as the mode of Chinese patent CN202071422U, when microphone is for a long time in wet environment, steam also can enter silicon micro-microphone structure, has to infiltrate silicon dioxide insulating layer and make the decline danger of even short circuit of impedance between extraction electrode.Therefore in design, require waterproof membrane comparatively fine and close, but the design of fine and close waterproof membrane has formed certain acoustic resistance to silicon micro-microphone, causes the loss of sensitivity of silicon micro-microphone integral product.
In order to play the effect of waterproof and to reduce loss of sensitivity, improvement encapsulation and packaging technology have been proposed in prior art, on encapsulating package inner chamber or the vibrating diaphragm operatic tunes interface corresponding with encapsulating package, deposit watertight composition is realized waterproof.For example, open day is on March 25th, 2009, inventor C king etc., the Chinese patent CN101394686A of " with the miniature microphone assembly of hydrophobic surface coating " by name, with Granted publication day be on July 4th, 2012, inventor huge triumph, the watertight composition deposit work that encapsulating package inner chamber and microphone structure are carried out that the Chinese patent CN202310097U of " a kind of silicon micro-microphone " by name has disclosed respectively that two kinds of different assembling links at microphone and circuit carry out.
Although foregoing invention can obtain good waterproof effect, but because the deposit work of watertight composition is to be placed on follow-up assembling link to carry out, the parts that depositing technics involves and production environment facility personnel are supporting more, produce and the equal inconvenience of assembling, and cost are expensive.For example, according to the requirement of depositing technics, foundation and the maintenance of corresponding production site condition and clean environment, corresponding special equipment purchase and water, electricity and gas pipeline supporting, corresponding special technology personnel training, the impact of related process link on natural environment, has all increased production cost extraly, has reduced the efficiency of producing.In the prior art, in order to realize waterproof and not lose sensitivity, waterproof insulating layer is made by depositing technics in rear end packaging technology link, corresponding manner can be referring to Fig. 1, but prior art has shortcomings, therefore, how existing problem in prior art is solved, be those skilled in the art's research direction place.
Summary of the invention
The object of the present invention is to provide capacitive tiny microphone of a kind of waterproof vapour and preparation method thereof, it is for needing the problem of waterproof in the actual use of prior art silicon microphone, provide a kind of can be without introduce the solution of depositing technics in packaging technology link, thereby can under the prerequisite of not losing sensitivity, obtain good waterproof effect on the one hand, avoid on the other hand the extra above-mentioned production cost producing due to the depositing technics of packaging technology link.
In order to achieve the above object, the invention provides a kind of capacitive tiny microphone of waterproof vapour, it comprises: doped substrate, at least one waterproof insulating layer, sacrifice layer, vibrating diaphragm and the operatic tunes, wherein, above described doped substrate, be deposited with described at least one waterproof insulating layer and described sacrifice layer, above described waterproof insulating layer and sacrifice layer, and be deposited with described vibrating diaphragm in the center of described doped substrate, between described vibrating diaphragm and described doped substrate, by the space removing after described sacrifice layer, form capacitor, the bottom of described vibrating diaphragm arranges the described operatic tunes, the described operatic tunes runs through whole doped substrate corresponding to the central area that described vibrating diaphragm is set doped substrate.
Wherein, described doped substrate is being provided with doped substrate electrode near described vibrating diaphragm one side, and described doped substrate electrode and doped substrate are electrically connected; On described vibrating diaphragm, be provided with vibrating diaphragm electrode, described vibrating diaphragm electrode and vibrating diaphragm are electrically connected.
Wherein, described waterproof insulating layer is attached near on the face of vibrating diaphragm.
Wherein, described waterproof insulating layer is attached near on the face of doped substrate.
Wherein, the material of described waterproof insulating layer comprises silicon nitride or polyimides, and described vibrating diaphragm is used conductive polycrystalline silicon material to realize.
Wherein, on described vibrating diaphragm, and beyond the central area of the corresponding operatic tunes, be provided with etching groove or etched hole.
In order to achieve the above object, the present invention also provides a kind of preparation method of capacitive tiny microphone, and described preparation method comprises the steps:
Step S1: doped substrate is provided;
Step S2: at the surface deposition sacrifice layer of doped substrate, and optionally shelter and etching sacrificial layer, at the surface deposition waterproof insulating layer of sacrifice layer, and optionally shelter and etching waterproof insulating layer, and at the surface deposition vibrating diaphragm of waterproof insulating layer, and optionally shelter and etching vibrating diaphragm;
Step S3: utilize at the shape of sacrifice layer and set etching groove or etched hole, obtain diaphragm structure;
Step S4: using vibrating diaphragm as mask, etching sacrificial layer;
Step S5: at the surface deposition metal of vibrating diaphragm, and the metal hand-hole on the vibrating diaphragm reserving by etching, sacrifice layer, waterproof insulating layer, in doped substrate and on vibrating diaphragm, form doped substrate electrode and the vibrating diaphragm electrode of drawing simultaneously;
Step S6: optionally shelter and etching doped substrate another surface corresponding to deposit vibrating diaphragm central area, the other end formation operatic tunes in doped substrate corresponding to deposit vibrating diaphragm, the described operatic tunes is positioned at the below of vibrating diaphragm (5), and the operatic tunes runs through whole doped substrate corresponding to the central area that vibrating diaphragm is set doped substrate;
Step S7: etching sacrificial layer, remove the sacrifice layer between doped substrate and the moving part of vibrating diaphragm.
Wherein, the substitute mode of described step S2 is: the first surface deposition waterproof insulating layer in doped substrate, and optionally shelter with etching after, again at the surface deposition sacrifice layer of waterproof insulating layer, and optionally shelter and etching, at the surface deposition vibrating diaphragm of sacrifice layer, and optionally shelter and etching vibrating diaphragm.
Wherein, described sacrificial layer material is silicon dioxide or phosphorosilicate glass.
Wherein, utilize photoetching to form a plurality of grooves on sacrifice layer, vibrating diaphragm deposit enters groove and forms the projection towards doped substrate.
Wherein, described waterproof insulating layer comprises self assembled monolayer, and the gross thickness of waterproof insulating layer is no more than 1 micron.
Wherein, in described step S5, the metal of deposit is to select one or more in gold, cadmium, nickel, titanium and silver.
Wherein, described doped substrate is carried out part doping in the side near vibrating diaphragm by the mode of Implantation, or selects the silicon wafer to manufacture of whole doping.
Compared with prior art, beneficial effect of the present invention is: the method rate of finished products of capacitance type minitype silicon microphone of preparing above-mentioned waterproof vapour is high, cost is low, technique easily realizes, can meet small size requirement, simplified the related process that the corresponding watertight composition of follow-up assembling link is made simultaneously, and corresponding to the each side cost of this respect technique, and be applicable to producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the anti-steam micro silicon microphone structural representation of prior art;
Fig. 2~Figure 10 B is the concrete implementing process step of the present invention cross-sectional schematic, wherein:
Fig. 2 is the structure cross-sectional schematic forming in first embodiment of the invention doped substrate after waterproof insulating layer;
Fig. 3 is the structure cross-sectional schematic after deposit sacrifice layer on first embodiment of the invention doped substrate and waterproof insulating layer;
Fig. 4 be first embodiment of the invention sacrifice layer by optionally shelter with photoetching after structure cross-sectional schematic;
Fig. 5 is that first embodiment of the invention is deposited the structure cross-sectional schematic after vibrating diaphragm;
Fig. 6 is first embodiment of the invention structure cross-sectional schematic behind etching groove or hole on vibrating diaphragm;
Fig. 7 is that first embodiment of the invention is utilizing vibrating diaphragm to make the structure cross-sectional schematic after mask etching sacrifice layer;
Fig. 8 is the structure cross-sectional schematic of first embodiment of the invention after depositing metal electrode;
Fig. 9 is the structure cross-sectional schematic of first embodiment of the invention after forming the operatic tunes;
Figure 10 A is that first embodiment of the invention is in the structure cross-sectional schematic of removing sacrifice layer;
Figure 10 B is that second embodiment of the invention is in the structure cross-sectional schematic of removing sacrifice layer;
Description of reference numerals: 1-doped substrate; 2-doped substrate electrode; 3-waterproof insulating layer; 4-sacrifice layer; 5-vibrating diaphragm; The 6-operatic tunes; 7-vibrating diaphragm electrode.
Embodiment
Below in conjunction with accompanying drawing, to the present invention is above-mentioned, be described in more detail with other technical characterictic and advantage.
The solution of the present invention is mainly used in the water vapor proofing structure preparation of capacitance type minitype silicon microphone, in the present invention, owing to corresponding waterproof insulating layer depositing technics being arranged in to front-end architecture, preparing link and complete, can save many costs that the processing arrangement of corresponding deposit waterproof insulating layer is brought in assembling link.
As shown in Figure 10 A and Figure 10 B: the present invention includes doped substrate 1, doped substrate electrode 2, waterproof insulating layer 3, sacrifice layer 4, vibrating diaphragm 5, the operatic tunes 6 and vibrating diaphragm electrode 7.
Fig. 2 has provided micro silicon microphone structure and preparation technology's flow process thereof of one embodiment of the invention, situation prepared by the micro silicon microphone structure of another embodiment of Figure 10 B to Figure 10 A.
As shown in Figure 10 A and Figure 10 B, the top of doped substrate 1 is deposited with waterproof insulating layer 3 and sacrifice layer 4, above waterproof insulating layer 3 and sacrifice layer 4 and in the center of doped substrate 1, be deposited with vibrating diaphragm 5, wherein, the lamination order of waterproof insulating layer 3 and sacrifice layer 4 can be changed, be on the face of the waterproof insulating layer 3 close vibrating diaphragm 5 that can be attached to doped substrate 1, also can be attached on the face of close doped substrate 1 of vibrating diaphragm 5, obviously, also can be attached to respectively on these two faces by two waterproof insulating layers 3 of deposit; The space removing after sacrifice layer 4 by part between vibrating diaphragm 5 and doped substrate 1 forms capacitor, and the part not removing in sacrifice layer 4 forms and connects Mao district between doped substrate 1 and movable diaphragm 5; Doped substrate 1 arranges the operatic tunes 6 corresponding to the bottom that vibrating diaphragm 5 is set, and the described operatic tunes 6 runs through whole doped substrate 1 corresponding to the central area that vibrating diaphragm 5 is set doped substrate 1.
Described sacrifice layer 4 use silicon dioxide or phosphorosilicate glass material are realized.Due to the hydrophily of sacrifice layer 4 materials, in wet environment, its surface is not fine and close, can adsorb steam, like this can between vibrating diaphragm and doped substrate, form the electrical impedance even electrical communication that declines.Like this, in wet environment, depend sacrifice layer 4 alone and do not have insulative water-proof effect.Different from the existing solution shown in Fig. 1, the present invention, between sacrifice layer 4 and doped substrate 1, or between sacrifice layer 4 and vibrating diaphragm 5, arranges waterproof insulating layer 3, utilizes hydrophobicity and the compactness of silicon nitride or polyimide material, plays waterproof effect.In actual wet environment, because water is to the infiltration angle of sacrifice layer 4 materials and not larger to the infiltration angular difference of waterproof insulating layer 3, and waterproof insulating layer 3 is fine and close, therefore can make due to different surface tension the edge separation of water between sacrifice layer 4 and waterproof insulating layer 3 on practising physiognomy between sacrifice layer 4 and waterproof insulating layer 3, so just effectively guaranteed the reliability of anti-steam insulation, described waterproof insulating layer 3 comprises self assembled monolayer, and its gross thickness is no more than 1 micron.
Close vibrating diaphragm 5 one sides of described doped substrate 1 are provided with doped substrate electrode 2, and described doped substrate electrode 2 is electrically connected with doped substrate 1; On described vibrating diaphragm 5, be provided with vibrating diaphragm electrode 7, described vibrating diaphragm electrode 7 is electrically connected with vibrating diaphragm 5.On described vibrating diaphragm 5, beyond the central area of the corresponding operatic tunes 6, be provided with etching groove or etched hole.By the shape in etching groove and hole, construct beam harmony hole, vibrating diaphragm rigidity is adjusted to design load, and form the acoustic pressure gatherer with certain frequency-specific feature by the shape in sound hole with arranging, propagate acoustic pressure, adjust air damping, control machinery noise to design load.
In addition, on vibrating diaphragm 5, can pass through the etching in advance on sacrifice layer 4, when deposit, form some projections, to do Stress Release, strengthen acoustic pressure collecting effect and to play backstop action.
If vibrating diaphragm 5 is used conductive polycrystalline silicon material to realize, after completing, deposit should pass through annealing regulation stress.
The preparation method of the capacitance type minitype silicon microphone of above-mentioned waterproof vapour can realize on existing universal microcomputer tool processing process basis.It comprises the following steps:
Step (a). doped substrate 1 is provided;
Step (b). as Fig. 2, at the surface deposition waterproof insulating layer 3 of doped substrate 1, and optionally shelter and etching waterproof insulating layer 3;
Step (c). as Fig. 3, at the surface deposition sacrifice layer 4 of waterproof insulating layer 3, and optionally shelter and etching sacrificial layer 4 as Fig. 4;
Step (d). as Fig. 5, at the surface deposition vibrating diaphragm 5 of sacrifice layer 4, and optionally shelter and etching vibrating diaphragm 5 as Fig. 6, utilize at the shape of sacrifice layer 4 and set etching groove or etched hole, obtain vibrating diaphragm 5 structures;
Step (e). as Fig. 7, using vibrating diaphragm 5 as mask, etching sacrificial layer 4;
Step (f). as Fig. 8, surface deposition metal at vibrating diaphragm 5, and by the metal hand-hole on technique etching reserves before vibrating diaphragm 5, sacrifice layer 4, waterproof insulating layer 3, in doped substrate 1 and on vibrating diaphragm 5, form doped substrate electrode 2 and the vibrating diaphragm electrode 7 of drawing simultaneously;
Step (g). as Fig. 9, optionally shelter and etching doped substrate 1 another surface corresponding to deposit vibrating diaphragm 5 central areas, the other end formation operatic tunes 6 in doped substrate 1 corresponding to deposit vibrating diaphragm 5, the described operatic tunes 6 is positioned at the below of vibrating diaphragm 5, and the operatic tunes 6 runs through whole doped substrate 1 corresponding to the central area that vibrating diaphragm 5 is set doped substrate 1;
Step (h). as Figure 10, etching sacrificial layer 4, removes the sacrifice layer 4 between doped substrate 1 and the moving part of vibrating diaphragm 5.
The preparation method of capacitive tiny microphone of the present invention, the sequencing of its step (b) and step (c) can be changed, can be first at the surface deposition sacrifice layer of doped substrate, and optionally shelter with etching after, at the surface deposition waterproof insulating layer of waterproof insulating layer, also optionally shelter and etching again, the corresponding micro silicon microphone of making as shown in Figure 10 B, corresponding the second embodiment.
In various embodiments of the present invention, the MEMS (micro electro mechanical system) sound-electric transition components chip of described micro silicon microphone for using silicon processing technique to manufacture; Packaged type includes but not limited to zero elevation and the sound scheme of advancing.
In general, doped substrate 1 can be carried out part doping by modes such as Implantations in the side near vibrating diaphragm 5, also can select the silicon wafer to manufacture of whole doping.Doped substrate electrode 2 and vibrating diaphragm electrode 7 can be made by one-time process, also can adopt respectively twice technique make and need to arrange operation according to reality processing.
In the first and second embodiment, only used one deck waterproof insulating layer 3 to be attached on doped substrate 1 or vibrating diaphragm electrode 7, obviously also can use two-layer waterproof insulating layer to be attached to respectively on doped substrate 1 and vibrating diaphragm electrode 7.
In addition, in described preparation method's f technique, using vibrating diaphragm during as mask etching sacrifice layer, according to the material of waterproof insulating layer 3, exist waterproof insulating layer 3 to be etched and the two kinds of possibilities that can not be etched, if waterproof insulating layer 3 can not be etched, should be above deposit waterproof insulating layer 3 optionally shelter in the processing step with etching and give corresponding consideration and correction.
In sum, the method rate of finished products of capacitance type minitype silicon microphone of preparing above-mentioned waterproof vapour is high, cost is low, technique easily realizes, can meet small size requirement, simplified the related process that the corresponding watertight composition of follow-up assembling link is made simultaneously, and corresponding to the each side cost of this respect technique, and be applicable to producing in enormous quantities.
More than explanation is just illustrative for the purpose of the present invention, and nonrestrictive, those of ordinary skills understand; in the situation that do not depart from the spirit and scope that following claims limit, can make many modifications, change; or equivalence, but all will fall within the scope of protection of the present invention.

Claims (13)

1. the capacitive tiny microphone of a waterproof vapour, it is characterized in that, it comprises: doped substrate (1), at least one waterproof insulating layer (3), sacrifice layer (4), vibrating diaphragm (5) and the operatic tunes (6), wherein, in described doped substrate (1) top, be deposited with described at least one waterproof insulating layer (3) and described sacrifice layer (4), in described waterproof insulating layer (3) and sacrifice layer (4) top, and be deposited with described vibrating diaphragm (5) in the center of described doped substrate (1), between described vibrating diaphragm (5) and described doped substrate (1), by the space removing after described sacrifice layer (4), form capacitor, the bottom of described vibrating diaphragm (5) arranges the described operatic tunes (6), the described operatic tunes (6) runs through whole doped substrate (1) corresponding to the central area that described vibrating diaphragm (5) is set doped substrate (1).
2. the capacitive tiny microphone of a kind of waterproof vapour according to claim 1, it is characterized in that, described doped substrate (1) is being provided with doped substrate electrode (2) near described vibrating diaphragm (5) one sides, and described doped substrate electrode (2) is electrically connected with doped substrate (1); On described vibrating diaphragm (5), be provided with vibrating diaphragm electrode (7), described vibrating diaphragm electrode (7) is electrically connected with vibrating diaphragm (5).
3. the capacitive tiny microphone of a kind of waterproof vapour according to claim 1, is characterized in that, described waterproof insulating layer (3) is attached near on the face of vibrating diaphragm (5).
4. the capacitive tiny microphone of a kind of waterproof vapour according to claim 1, is characterized in that, described waterproof insulating layer (3) is attached near on the face of doped substrate (1).
5. the capacitive tiny microphone of a kind of waterproof vapour according to claim 1, is characterized in that, the material of described waterproof insulating layer (3) comprises silicon nitride or polyimides, and described vibrating diaphragm (5) is used conductive polycrystalline silicon material to realize.
6. the capacitive tiny microphone of a kind of waterproof vapour according to claim 1, is characterized in that, described vibrating diaphragm (5) is upper, and beyond the central area of the corresponding operatic tunes (6), is provided with etching groove or etched hole.
7. a preparation method for capacitive tiny microphone, is characterized in that, described preparation method comprises the steps:
Step S1: doped substrate (1) is provided;
Step S2: at the surface deposition sacrifice layer (4) of doped substrate (1), and optionally shelter and etching sacrificial layer (4), surface deposition waterproof insulating layer (3) at sacrifice layer (4), and optionally shelter and etching waterproof insulating layer (3), and at the surface deposition vibrating diaphragm (5) of waterproof insulating layer (3), and optionally shelter and etching vibrating diaphragm (5);
Step S3: utilize at the shape of sacrifice layer (4) and set etching groove or etched hole, obtain vibrating diaphragm (5) structure;
Step S4: using vibrating diaphragm (5) as mask, etching sacrificial layer (4);
Step S5: at the surface deposition metal of vibrating diaphragm (5), and the metal hand-hole on the vibrating diaphragm reserving by etching (5), sacrifice layer (4), waterproof insulating layer (3), doped substrate electrode (2) and vibrating diaphragm electrode (7) that in doped substrate (1), on upper and vibrating diaphragm (5), formation is drawn simultaneously;
Step S6: optionally shelter and etching doped substrate (1) another surface corresponding to deposit vibrating diaphragm (5) central area, the other end formation operatic tunes (6) in doped substrate (1) corresponding to deposit vibrating diaphragm (5), the described operatic tunes (6) is positioned at the below of vibrating diaphragm (5), and the operatic tunes (6) runs through whole doped substrate (1) corresponding to the central area that vibrating diaphragm (5) is set doped substrate (1);
Step S7: etching sacrificial layer (4), remove the sacrifice layer (4) between doped substrate (1) and the moving part of vibrating diaphragm (5).
8. the preparation method of capacitive tiny microphone according to claim 7, it is characterized in that, the substitute mode of described step S2 is: the first surface deposition waterproof insulating layer (3) in doped substrate (1), and optionally shelter with etching after, again at the surface deposition sacrifice layer (4) of waterproof insulating layer (3), and optionally shelter and etching, at the surface deposition vibrating diaphragm (5) of sacrifice layer (4), and optionally shelter and etching vibrating diaphragm (5).
9. according to the preparation method of the capacitive tiny microphone described in claim 7 or 8, it is characterized in that, described sacrifice layer (4) material is silicon dioxide or phosphorosilicate glass.
10. according to the preparation method of the capacitive tiny microphone described in claim 7 or 8, it is characterized in that, on sacrifice layer (4), utilize photoetching to form a plurality of grooves, vibrating diaphragm (5) deposit enters groove and forms the projection towards doped substrate (1).
11. according to the preparation method of the capacitive tiny microphone described in claim 7 or 8, it is characterized in that, described waterproof insulating layer (3) comprises self assembled monolayer, and the gross thickness of waterproof insulating layer (3) is no more than 1 micron.
12. according to the preparation method of the capacitive tiny microphone described in claim 7 or 8, it is characterized in that, in described step S5, the metal of deposit is to select one or more in gold, cadmium, nickel, titanium and silver.
13. according to the preparation method of the capacitive tiny microphone described in claim 7 or 8, it is characterized in that, described doped substrate (1) is carried out part doping in the side near vibrating diaphragm (5) by the mode of Implantation, or selects the silicon wafer to manufacture of whole doping.
CN201310097521.9A 2013-03-25 2013-03-25 Vapor-proof capacitive mini microphone and preparation method thereof Pending CN104080032A (en)

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CN104902410A (en) * 2014-03-05 2015-09-09 北京卓锐微技术有限公司 Silicon condenser microphone and preparation method thereof
CN106773848A (en) * 2016-12-13 2017-05-31 江门市纳森科技有限公司 A kind of control system with Voice command bathtub
CN111885473A (en) * 2020-06-24 2020-11-03 歌尔微电子有限公司 Capacitive micro-electro-mechanical system microphone, microphone monomer and electronic equipment
CN112153544A (en) * 2020-09-28 2020-12-29 瑞声新能源发展(常州)有限公司科教城分公司 Capacitance microphone and manufacturing method thereof
CN112312294A (en) * 2019-07-29 2021-02-02 美商富迪科技股份有限公司 Micro-electro-mechanical system microphone

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CN102457800A (en) * 2010-10-21 2012-05-16 北京卓锐微技术有限公司 MEMS (Micro Electronic Mechanical System) capacitive microphone without back polar plate and manufacture method thereof
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CN104902410A (en) * 2014-03-05 2015-09-09 北京卓锐微技术有限公司 Silicon condenser microphone and preparation method thereof
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CN111885473A (en) * 2020-06-24 2020-11-03 歌尔微电子有限公司 Capacitive micro-electro-mechanical system microphone, microphone monomer and electronic equipment
CN112153544A (en) * 2020-09-28 2020-12-29 瑞声新能源发展(常州)有限公司科教城分公司 Capacitance microphone and manufacturing method thereof

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