CN105282671A - Silicon capacitor microphone capable of working at high sound pressure level - Google Patents
Silicon capacitor microphone capable of working at high sound pressure level Download PDFInfo
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- CN105282671A CN105282671A CN201410357243.0A CN201410357243A CN105282671A CN 105282671 A CN105282671 A CN 105282671A CN 201410357243 A CN201410357243 A CN 201410357243A CN 105282671 A CN105282671 A CN 105282671A
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Abstract
The invention provides a silicon capacitor microphone capable of working at a high sound pressure level. The silicon capacitor microphone comprises a housing, a substrate, a sound cavity, a vibrating diaphragm and a back electrode; the housing is provided with a sound incoming hole; the substrate is combined with the housing, and the substrate is provided with an opening connecting sound chambers of MEMS sensitive elements; the sound cavity is formed by the MEMS sensitive elements and the substrate, and a complete front cavity is formed by the sound incoming hole arranged in the housing; the vibrating diaphragm is stimulated by a sound signal in the sound cavity and then generates a vibration; and the back electrode is located over the vibrating diaphragm, the back electrode and the vibrating diaphragm form a pair of variable capacitor, and a capacitance value varies with the sound signal. The back electrode is provided with a plurality of protrusions. At least one position is specified on the back electrode according to a high sound pressure level optimization need, and the height of the protrusion disposed at the position enables the motion range of the diaphragm at the position to be reduced for more than 10% relative to the motion ranges of the diaphragm at the adjacent protrusions. On the basis that the low sound pressure level performance index and applicability are kept, the allowed working sound pressure level is improved 1-40dB relative to the original basis, and linearity of the silicon capacitor microphone at the high sound pressure level is also optimized.
Description
Technical field
The present invention relates to a kind of silicon capacitor microphone that can work under high sound pressure level, especially, relate to a kind of MEMS structure of the silicon capacitor microphone that can work under high sound pressure level.
Background technology
Micro electronmechanical (MEMS, micro-electro-mechanicalsystem) microphone or claim silicon capacitor microphone because its volume is little, be suitable for the advantages such as surface mount and be widely used in the sound collection of tablet electronic device, such as: mobile phone, MP3, recording pen and monitoring equipment etc.For meeting the growing material and cultural needs of the people, the index such as volume, cost, signal to noise ratio of silicon capacitor microphone is also constantly optimizing raising.In relevant optimisation technique scheme, be no lack of numerous effort, attempt the sound pressure level that raising silicon capacitor microphone can normally work, to widen its range of application.
In traditional technology, mechanical working range and the electrical installation scope of work is there is according to capacitive silicon microphone, the sensitivity decrease of silicon capacitor microphone made its mechanical working range increase with corresponding electrical installation scope coincidence degree, contribute to the sound pressure level raising that circuit finally exports the silicon microphone work of permission.But such way can lose the sensitivity of silicon capacitor microphone when less sound pressure level and signal to noise ratio.Further, along with the raising of circuit engineering, electrical installation scope is also constantly being expanded, and the mechanical working range of the MEMS structure of silicon capacitor microphone becomes the bottleneck restricting its sound pressure level normally worked and improve further gradually.
In existing optimization method, for the bottleneck of the mechanical working range of MEMS structure, there is the scheme of differential configuration scheme and increase movement clearance respectively.Differential configuration scheme refers to and respectively arranges one deck backplane at movable vibrating diaphragm upper and lower, and obtain higher sound pressure level working range by processing both sides differential capacitance signal simultaneously, this scheme requires the backplane processing more one decks in MEMS technology, circuit also requires corresponding processing scheme, and the increase of its cost and difficulty is self-evident; The scheme increasing movement clearance refers to the gap increased above and below vibrating diaphragm, give the activity space that vibrating diaphragm is larger, this scheme requires to process larger gap in MEMS technology, and because gap increases rear electric capacity and electric sensitivity reduces, circuit also requires stronger detectability.In addition, the microphone of the confined space is divided into a few part by Chinese patent CN203368750U and CN103402161A, there is most suitable mechanical working range respectively, this scheme switches the working range that really can add microphone by circuit when real work, but it is inner at limited microphone to be equivalent to combine a few cover system, to the very large pressure that MEMS structure and circuit all cause.
Summary of the invention
The invention provides a kind of silicon capacitor microphone that can work under high sound pressure level, can make on the basis of the sensitivity of the MEMS structure of silicon capacitor microphone when possessing original low sound pressure levels, signal to noise ratio, the linearity and same support circuit, increase the sound pressure level of permission work, optimize compared with the linearity under sound pressure level simultaneously.
For solving the problem, the technical solution used in the present invention is:
The silicon capacitor microphone that can work under high sound pressure level, it comprises: shell, and this shell is provided with sound inlet; Substrate, this substrate is combined with described shell, and on substrate, be provided with the perforate be connected in each MEMS senser sound chamber; The operatic tunes, the described operatic tunes is made up of jointly the perforate on the sound chamber of each MEMS senser and substrate, and by arranging that sound inlet on the housing forms complete ante-chamber; Vibrating diaphragm, this vibrating diaphragm adopts doped polycrystalline silicon to make, and excite by the voice signal in the operatic tunes and produce vibration, the space of vibration is by partly removing sacrifice layer, thus releasing structure realizes; Backplane, this backplane is positioned at above vibrating diaphragm, employing doped polycrystalline silicon is made, form a pair variable capacitance with vibrating diaphragm, capacitance changes with voice signal, on described backplane, wherein arrange the figures such as porose, groove, also arranging multiplely has projection, need by high sound pressure level optimization, specify at least one place, the rising height that this place is arranged makes the scope of activities of the most contiguous prominence vibrating diaphragm of the scope of activities of this place's vibrating diaphragm reduce more than 10%.
Preferably, the described rising height arranged in appointment place makes the scope of activities of the most contiguous prominence vibrating diaphragm of the scope of activities of this place's vibrating diaphragm reduce more than 10%, is that the projection by arranging differing heights respectively in the most adjacent place of appointment place and its realizes.
Preferably, described makes the scope of activities of the most contiguous prominence vibrating diaphragm of the scope of activities of this place's vibrating diaphragm reduce more than 10% at the rising height of appointment place setting, be vibrating diaphragm or the backplane by arranging different primary stress respectively in the most adjacent place of appointment place and its, realize after release vibrating diaphragm or backplane stress.
Preferably, the described projection arranged in appointment place, its height is different from most adjacent place rising height, and when appointment place is more than one, the rising height that each appointment place is arranged is not quite similar.
Preferably, on described vibrating diaphragm, at least one place is provided with projection, and to limit the scope of activities of vibrating diaphragm further, wherein, scope of activities and the described backplane upper process of described vibrating diaphragm upper process restriction vibrating diaphragm limit the scope of activities homonymy of vibrating diaphragm or toss about.
Preferably, described backplane also arranges porose and/or groove.
Owing to adopting technique scheme, beneficial effect of the present invention is: make on the basis of the sensitivity of the MEMS structure of silicon capacitor microphone when possessing original low sound pressure levels, signal to noise ratio, the linearity and same support circuit, increase the sound pressure level of permission work, optimize compared with the linearity under sound pressure level simultaneously, thus under original technological process of production, product cost and subsequent handling pattern, expanded the range of application of silicon capacitor microphone.
Accompanying drawing explanation
Fig. 1 is the silicon capacitor microphone MEMS structure with multiple rising height of one embodiment of the invention and is subject to the generalized section of input signal generation mechanical deformation of high, normal, basic sound pressure level respectively;
Fig. 2 be dull and stereotyped variable capacitance respectively under high, normal, basic input signal drives, along the schematic diagram of the both forward and reverse directions vibration same displacement of gap change;
Fig. 3 is after the high, normal, basic sound pressure level being subject to fixed frequency in the unit interval drives, and does not adopt the electric capacity of the silicon capacitor microphone of technical measure along with the schematic diagram of variable signal in one-period of time;
Fig. 4, after the high, normal, basic sound pressure level being subject to fixed frequency in the unit interval drives, adopts in the embodiment as shown in Figure 1 of technical measure, and the electric capacity of silicon capacitor microphone is along with the schematic diagram of variable signal in one-period of time;
Fig. 5 be one embodiment of the invention the silicon capacitor microphone that projection is set on vibrating diaphragm and be subject to high sound pressure level input signal generation mechanical deformation generalized section.
Embodiment
The present invention is mainly used in a kind of silicon capacitor microphone that can work under high sound pressure level, can make on the basis of the sensitivity of the MEMS structure of silicon capacitor microphone when possessing original low sound pressure levels, signal to noise ratio, the linearity and same support circuit, increase the sound pressure level of permission work, optimize compared with the linearity under sound pressure level simultaneously, thus under original technological process of production, product cost and subsequent handling pattern, expand the range of application of silicon capacitor microphone.Below in conjunction with concrete drawings and Examples, the invention will be further described.
Fig. 1 is the silicon capacitor microphone schematic diagram that can work under high sound pressure level of one embodiment of the invention.As shown in FIG., the MEMS structure of silicon capacitor microphone, its operatic tunes is realized by the perforate on substrate 1, and vibrating diaphragm 3 and backplane 5 determine its height by sacrifice layer 2 and sacrifice layer 4.The space of vibrating diaphragm 3 is formed by sacrifice layer 2 and sacrifice layer 4 part being removed.Vibrating diaphragm 3 and backplane 5 constitute a pair according to being subject to the voice signal of described operatic tunes input and the capacity plate antenna that changes.The capacitance of this electric capacity is obviously only relevant with the relative position of vibrating diaphragm 3 and backplane 5, so convenient for discussing herein, the fixing nothing distortion of backplane 5 is only discussed, and vibrating diaphragm 3 does not have initial deformation, and projection 501,503 place of contact all can ensure the simple scenario that vibrating diaphragm 3 and backplane 5 insulate.In fact, for the complex situations that backplane 5 exists the plastic deformation comparable with vibrating diaphragm 3, vibrating diaphragm 3 has initial deformation, can by judgement in advance, revised by reverse design, its relative deformation situation is similar to simple scenario discussed herein.Projection 501,503 place for contact may cause the situation of vibrating diaphragm 3 and backplane 5 short circuit, can by processing with the technique or circuitry means that do not adopt similar silicon capacitor microphone of the present invention.In the present embodiment, vibrating diaphragm 3 is subject to voice signal impact and produces vibration, the direction that definition gap reduces electric capacity increase is forward, otherwise be oppositely, then the vibrating diaphragm 3 limit of sports record position that its high, medium and low input sound pressure level is corresponding respectively: sound pressure level extreme position 312 in forward low sound pressure levels extreme position 311, forward, forward high sound pressure level extreme position 313, oppositely low sound pressure levels extreme position 301 (dotted line represents), oppositely in sound pressure level extreme position 302 (chain-dotted line represents), oppositely high sound pressure level extreme position 303 (double dot dash line represents).Can see, the previously described rising height arranged in appointment place 501 and 503 makes the most contiguous prominence of the scope of activities of this place's vibrating diaphragm reduce more than 10%, after making vibrating diaphragm 3 and backplane 5 on appointment place contacts, the vibrating diaphragm of its vicinity still has enough activity spaces, can be driven further by acoustic pressure, thus avoid capacitance change signal to occur " truncation " phenomenon too early, thus optimize sensor linearity, the input signal of more high sound pressure level is had to the response of forward.
Wherein, the low sound pressure levels of often kind of microphone, middle sound pressure level, high sound pressure level are different according to the difference of design, for the present embodiment, representative value is 120dB, 130dB, 140dB from low to high respectively, and what the present embodiment made microphone works scope allow the maximum sound pressure level of normal work on the original basis increases 140dB from 120dB.
Wherein, projection 502 place highly making the scope of activities of this place's vibrating diaphragm the most contiguous in the projection 501 of appointment place setting reduces more than 10%, can realizing in several ways: such as, projection 501 place can being specified to realize with the projection of contiguous projection 502 place differing heights by arranging; Also can by arranging vibrating diaphragm 3 or the backplane 5 of primary stress different from adjacent place, realize after release stress, namely the vibrating diaphragm 3 of diverse location or backplane 5 warpage naturally after Stress Release is made, not flat condition during growth, the most contiguous projection 502 place of the scope of activities of projection 501 place vibrating diaphragm so also can be made to reduce more than 10%.
Wherein in the projection 501,503 that appointment place is arranged, its height is different from adjacent place rising height, and when appointment place is more than one, the rising height that each appointment place 501 and 503 is arranged is not quite similar.The Warping Effect after Stress Release by vibrating diaphragm and backplane, the height of projection should synthetically decide according to vibrating diaphragm 3 or the initial warpage of backplane 5 and the deformation under different sound pressure level thereof, although generally rising height is different, but in reality is implemented, can combined process ability, the concrete condition of comprehensive warpage and distortion decides the sequence of rising height.
In addition, on the basis of Fig. 1 embodiment, also on described vibrating diaphragm, the scope of activities that projection limits vibrating diaphragm further can be set at least one place, by controlling the mechanical working range of positive and negative two-phase cycle vibration to some extent, improve the permission input sound pressure level that silicon capacitor microphone normally works further.
The silicon capacitor microphone that can work under high sound pressure level of Fig. 1 embodiment, described in it, silicon capacitor microphone is less at input audio signal, when the projection 501 of described appointment place is collided with vibrating diaphragm 3, its operating state is identical with traditional silicon capacitance microphone, and move up and down maximum position 301 and 311 and traditional silicon capacitance microphone of its vibrating diaphragm is as good as.
When input audio signal is comparatively large, when the projection of described appointment place and vibrating diaphragm are collided, the linearity of the silicon capacitor microphone of this projection is not set under the linearity of silicon capacitor microphone is better than equal operating mode.This point is according to mechanical movement to the Nonlinear Design in capacitance change signal out.As everyone knows, in the capacity plate antenna of a pair pole plate formation, capacitance and capacitance gap are inversely proportional to, this also just causes dull and stereotyped when doing the equal positive and negative two-phase cycle vibration of displacement amplitude along gap direction, corresponding electric capacity amplitude is unequal, and large in the direction capacitance variations of gap smaller, become large direction capacitance variations in gap little.Like this, just can by rationally arranging projection 501 in the direction of motion of capacitance gap reduction, carry out part and limit its mechanical activation amplitude, make the electric capacity amplitude on corresponding both forward and reverse directions more close, the close of most of structure of vibrating diaphragm 3 and backplane 5 can be prevented by the stop effect of projection 501 simultaneously, thus normally can work under higher inputted vibration power (namely higher input sound pressure level).
Fig. 2 is the schematic diagram of vibrating diaphragm 3 limit of sports record corresponding to the situation of the common capacity plate antenna not adopting the vibrating diaphragm 3 of technological means of the present invention and backplane 5 to form under the motion of forward and reverse equal displacement amplitude and high, medium and low input sound pressure level thereof.As shown in Figure 3, in each cycle, the vibration force that low sound pressure levels makes vibrating diaphragm 3 be subject to is less, and range of movement is very little compared with capacitance gap, and its non-linear behavior is not obvious; The vibration force that middle sound pressure level makes vibrating diaphragm 3 be subject to is moderate, range of movement and capacitance gap comparable, its non-linear behavior is more obvious; The vibration force that high sound pressure level makes vibrating diaphragm 3 be subject to is very large, and the ratio of range of movement amplitude and capacitance gap is close to 1, and because capacitance and capacitance gap are inversely proportional to, its non-linear behavior clearly.
As shown in Figure 4, after adopting the technological means of the embodiment shown in Fig. 1, in each cycle, the vibration force that low sound pressure levels makes vibrating diaphragm 3 be subject to is less, range of movement is very little compared with capacitance gap, its non-linear behavior is not obvious, and its operating state is with substantially identical when not adopting technological means embodiment illustrated in fig. 1; The vibration force that middle sound pressure level makes vibrating diaphragm 3 be subject to is moderate, structure moved beneath scope and capacitance gap comparable, and its upper direction scope is subject to the restriction of projection 501, although mechanical displacement is no longer symmetrical, the symmetry of its electric capacity makes moderate progress on the contrary; The vibration force that high sound pressure level makes vibrating diaphragm 3 be subject to is very large, the ratio of structure moved beneath scope and capacitance gap is close to 1, because capacitance and capacitance gap are inversely proportional to, its upper direction scope is by after 501 and 503 restrictions, although mechanical movement is very asymmetric, the symmetry of its capacitance but improves a lot, although some distortion of the forward high sound pressure level curve shape of Fig. 4, its linearity under high sound pressure level has larger improvement undoubtedly.More than that, owing to adopting the technological means of the embodiment shown in Fig. 1, MEMS structure can respond larger input sound pressure level and produce capacitance variations, and its capacitance variations scope have also been smaller, and goes for the output demand of more sound pressure level under same electrical installation scope.
Fig. 5 is the silicon capacitor microphone schematic diagram that can work under high sound pressure level of a preferred embodiment of the invention, as shown in FIG., applying basic means of the present invention and after be provided with projection 300 on vibrating diaphragm, the MEMS structure of silicon capacitor microphone is not only when being subject to high sound pressure level input, vibrating diaphragm 3 is by the double dot dash line change shown in 303 and 313, when more high sound pressure level inputs, the vibration of both sides is all limited to some extent, as shown in imaginary point line 304 and 314, its edge deformation situation and 303 and 313 is more or less the same, but the distortion that the part that span is larger has degree smaller comparatively before, wherein the degree of 314 to 304 distortion is large.Like this, even if there is the input of more high sound pressure level, because corresponding projection limits the degree of vibrating diaphragm 3 distortion, the input sound pressure level that the capacitance variations scope of same mechanical working range and correspondence thereof is corresponding wider so just can be made.Can make silicon capacitor microphone under same technique, cost and support circuit condition, under the prerequisite keeping original low sound pressure levels and middle sound pressure level characteristic, improve the input sound pressure level scope be suitable for further.
By arranging the scope of activities that projection limits vibrating diaphragm on backplane and/or vibrating diaphragm in above-described embodiment.Vibrating diaphragm moves by the electrostatic attraction of voltage on backplane and the pressure of acoustic pressure, for the object of restriction vibrating diaphragm scope of activities, can also on backplane the figure such as providing holes and/or groove, beating the place in hole or groove, electrostatic attraction will diminish, and the scope of activities of this place's vibrating diaphragm also can diminish.In sum, proposition of the present invention, make on the architecture basics of original one deck vibrating diaphragm and one deck backplane, widen mechanical working range with same capacitance gap and become possibility, can make on the basis of the sensitivity of the MEMS structure of silicon capacitor microphone when possessing original low sound pressure levels, signal to noise ratio, the linearity and same support circuit, increase the sound pressure level of permission work, optimize compared with the linearity under sound pressure level simultaneously.Owing to adopting means of the present invention, silicon capacitor microphone on the basis keeping low sound pressure levels performance index and applicability, allow the sound pressure level of work to be improved 1 ~ 40dB on the original basis, its linearity under high sound pressure level is also optimized.
In addition, the term " front " in specification and claims, " afterwards ", " top ", " end ", " on ", D scores etc. (if existence) are for illustration of property object and not necessarily for describing permanent relative position.Be understandable that the term so used can exchange in the appropriate case, make embodiments of the invention as herein described can at the enterprising line operate in other directions being such as different from above-mentioned or described direction herein.
The above description of this invention is illustrative, and nonrestrictive, and those skilled in the art is understood, and can carry out many amendments, change or equivalence, but they all will fall within the scope of protection of the present invention within the spirit and scope of claim restriction to it.
Claims (6)
1. the silicon capacitor microphone that can work under high sound pressure level, is characterized in that, comprising:
Shell, this shell is provided with sound inlet;
Substrate, this substrate is combined with described shell, and this substrate is provided with the perforate be connected in the sound chamber of each MEMS senser;
The operatic tunes, the described operatic tunes is made up of jointly the perforate on each MEMS senser sound chamber and described substrate, and by arranging that sound inlet on the housing forms complete ante-chamber;
Vibrating diaphragm, this vibrating diaphragm adopts doped polycrystalline silicon to make, and excites produce vibration by the voice signal in the described operatic tunes;
Backplane, this backplane is positioned at above described vibrating diaphragm, employing doped polycrystalline silicon is made, a pair variable capacitance is formed with described vibrating diaphragm, its capacitance changes with voice signal, and described backplane is provided with multiple projection, the needs optimized by high sound pressure level, specify at least one place, the scope of activities of the prominence vibrating diaphragm that the rising height that this place is arranged makes the scope of activities of this place's vibrating diaphragm the most contiguous compared with it reduces more than 10%.
2. the silicon capacitor microphone that can work under high sound pressure level according to claim 1, it is characterized in that, the described rising height arranged in appointment place makes the scope of activities of the most contiguous prominence vibrating diaphragm of the scope of activities of this place's vibrating diaphragm reduce more than 10%, is that the projection by arranging differing heights respectively in the most adjacent place of appointment place and its realizes.
3. the silicon capacitor microphone that can work under high sound pressure level according to claim 1, it is characterized in that, described makes the scope of activities of the most contiguous prominence vibrating diaphragm of the scope of activities of this place's vibrating diaphragm reduce more than 10% at the rising height of appointment place setting, be vibrating diaphragm or the backplane by arranging different primary stress respectively in the most adjacent place of appointment place and its, realize after release vibrating diaphragm or backplane stress.
4. the silicon capacitor microphone that can work under high sound pressure level according to claim 1, it is characterized in that, the described projection arranged in appointment place, its height is different from most adjacent place rising height, when appointment place is more than one, the rising height that each appointment place is arranged is not quite similar.
5. the silicon capacitor microphone that can work under high sound pressure level according to claim 1, it is characterized in that, on described vibrating diaphragm, at least one place is provided with projection, to limit the scope of activities of vibrating diaphragm further, wherein, the scope of activities of described vibrating diaphragm upper process restriction vibrating diaphragm and described backplane upper process limit the scope of activities homonymy of vibrating diaphragm or toss about.
6. the silicon capacitor microphone that can work under high sound pressure level according to claim 1, is characterized in that, described backplane also arranges porose and/or groove.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410357243.0A CN105282671A (en) | 2014-07-24 | 2014-07-24 | Silicon capacitor microphone capable of working at high sound pressure level |
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| CN201410357243.0A CN105282671A (en) | 2014-07-24 | 2014-07-24 | Silicon capacitor microphone capable of working at high sound pressure level |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106982399A (en) * | 2017-01-20 | 2017-07-25 | 纳智源科技（唐山）有限责任公司 | Sound collector and the audio collecting device with it |
| CN107071673A (en) * | 2017-02-16 | 2017-08-18 | 汉得利（常州）电子股份有限公司 | A kind of silicon substrate MEMS array loudspeaker |
| CN109246566A (en) * | 2018-10-09 | 2019-01-18 | 歌尔股份有限公司 | MEMS sensor |
| WO2022110270A1 (en) * | 2020-11-25 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Mems microphone chip |
| WO2022142507A1 (en) * | 2020-12-30 | 2022-07-07 | 无锡华润上华科技有限公司 | Mems microphone and diaphragm structure thereof |
| CN116996806A (en) * | 2023-09-26 | 2023-11-03 | 苏州墨觉智能电子有限公司 | Bone conduction earphone |
| CN117560611A (en) * | 2024-01-11 | 2024-02-13 | 共达电声股份有限公司 | Microphone |
| CN117560611B (en) * | 2024-01-11 | 2024-04-16 | 共达电声股份有限公司 | Microphone |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106982399A (en) * | 2017-01-20 | 2017-07-25 | 纳智源科技（唐山）有限责任公司 | Sound collector and the audio collecting device with it |
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| WO2022142507A1 (en) * | 2020-12-30 | 2022-07-07 | 无锡华润上华科技有限公司 | Mems microphone and diaphragm structure thereof |
| CN116996806A (en) * | 2023-09-26 | 2023-11-03 | 苏州墨觉智能电子有限公司 | Bone conduction earphone |
| CN117560611A (en) * | 2024-01-11 | 2024-02-13 | 共达电声股份有限公司 | Microphone |
| CN117560611B (en) * | 2024-01-11 | 2024-04-16 | 共达电声股份有限公司 | Microphone |
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Application publication date: 20160127 |