CN108810776A - Capacitive MEMS microphone and its manufacturing method - Google Patents
Capacitive MEMS microphone and its manufacturing method Download PDFInfo
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- CN108810776A CN108810776A CN201810631510.7A CN201810631510A CN108810776A CN 108810776 A CN108810776 A CN 108810776A CN 201810631510 A CN201810631510 A CN 201810631510A CN 108810776 A CN108810776 A CN 108810776A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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Abstract
The invention discloses capacitive MEMS microphone and its manufacturing methods.Since vibrating diaphragm edge is not easy to vibrate, the capacitance size that back electrode marginal portion is formed with vibrating diaphragm edge has a great impact to sensitivity.Capacitive MEMS microphone of the present invention, including substrate, vibrating diaphragm, back electrode, connector assembly, etching stopping ring, vibrating diaphragm support ring, the first dead ring and the second dead ring.The substrate, etching stopping ring, vibrating diaphragm support ring, the first dead ring, the second dead ring are arranged in order and are fixed together.Vibrating diaphragm is fixed in vibrating diaphragm support ring.Multiple annular grooves are offered on two sides of vibrating diaphragm.All annular grooves are coaxially disposed with vibrating diaphragm.Silicon nitride passivation protective layer is made of protection ring and protection disk.Protect that side side evagination setting of the close vibrating diaphragm of disk, the setting of other side side indent.Conductive layer by conducting ring and conductive sheet set at.The present invention by vibrating diaphragm by being fabricated to the high sensitivity that cyclic structure realizes microphone.
Description
Technical field
The invention belongs to sensors and micro-electromechanical system field, and in particular to a kind of capacitive MEMS microphone and its
Manufacturing method.
Background technology
Speech exchange is the most direct mode of human communication, and therefore, microphone is in the conventional consumer electronics such as communication and amusement
Field plays always key player.Microphone is substantially a kind of acoustic sensor, is a kind of to convert external acoustic signal
For the energy converter of electric signal.According to principle of signal conversion or mode, microphone can be roughly divided into condenser type, piezoelectric type and photo-electric
Three types, wherein Electret Condencer Microphone occupies dominant position on the market.
Electret capacitor microphone (ECM) and MEMS (MEMS) Electret Condencer Microphone are most common two kinds of electricity
Capacitance-type microphone.After decades of development, traditional ECM has been widely used in every field.However, the vibration of ECM
Film uses the polymeric material with permanent charge, is not amenable to high-temperature process, and largely automates surface mount process at present
It is required for by 260 DEG C of high-temperature solderings, therefore, ECM has lost the advantage of mass production in consumer electronics field.Relatively
More preferable in the noise removing performance of ECM, capacitive MEMS microphone, temperature range is wider, and scalability is high, and sound quality is good,
Small, properties of product are stablized, and high-volume automated production is conducive to.
Capacitive MEMS microphone is a kind of miniature transducer that voice signal can be converted to electric signal.The two of capacitance
A pole plate (i.e. vibrating diaphragm and back electrode) is its basic structure, and under normal circumstances, vibrating diaphragm is movable, and back electrode is fixed
, the input of alternative sounds can make vibrating diaphragm generate corresponding vibration, cause capacitance that corresponding variation occurs, by follow-up electricity
Corresponding electric signal is can be obtained after the processing of road.
Sensitivity as weighing the whether excellent most important parameter of microphone property, can from electrical sensitivity and
Two aspect of mechanical sensitivity does qualitative analysis.From the angle of electrical sensitivity, the capacitance of raising capacity cell can be passed through
Value and DC offset voltage promote sensitivity；From the angle of mechanical sensitivity, can be carried by reducing the stress of vibrating diaphragm
Rise sensitivity.Capacitance can be improved by reducing the distance between vibrating diaphragm and back electrode or increasing vibrating diaphragm and the surface area of back electrode
Capacitance, but the too small vibrating diaphragm that is easy to cause of the distance between vibrating diaphragm and back electrode is sticked in back electrode in microphone works
Together, excessive surface area is easy to cause vibrating diaphragm and back electrode crack damage；When DC offset voltage is excessive and is more than suction
When closing voltage, vibrating diaphragm can be attached together with back electrode under the action of electrostatic force.The reduction of membrane stress leads to Film stiffness
Weaken, be easy to cause the rupture of film or generate the result of recess.It is sensitive with machinery therefore, it is necessary to balance electrical sensitivity
Degree, further to promote the performance of microphone.Further, since vibrating diaphragm edge is not easy to vibrate, back electrode marginal portion and vibrating diaphragm
The capacitance size that edge is formed has a great impact to sensitivity.
Invention content
The purpose of the present invention is to provide a kind of capacitive MEMS microphones and preparation method thereof.
Capacitive MEMS microphone of the present invention, including substrate, vibrating diaphragm, back electrode, connector assembly, etching stopping ring, vibrating diaphragm
Support ring, the first dead ring and the second dead ring.The substrate, etching stopping ring, vibrating diaphragm support ring, the first dead ring,
Two dead rings are arranged in order and are fixed together.Vibrating diaphragm is fixed in vibrating diaphragm support ring.It is offered on two sides of vibrating diaphragm
Multiple annular grooves.All annular grooves are coaxially disposed with vibrating diaphragm.The edge of vibrating diaphragm offers venthole.
The madial wall of the back electrode and the second dead ring is fixed.Back electrode is arranged with vibrating diaphragm interval.Back electrode includes
Obstruct insulating layer, conductive layer and silicon nitride passivation protective layer.Silicon nitride passivation protective layer is made of protection ring and protection disk.Protection
Ring is fixed with the second dead ring.Protect that side side evagination setting of the close vibrating diaphragm of disk, the setting of other side side indent.
The conductive layer by conducting ring and conductive sheet set at.The conducting ring and conductive sheet is fixed with protection disk.
The internal diameter of conducting ring is greater than or equal to the diameter of conductive sheet.Conductive sheet and conducting ring are fixed with protection disk.Conducting ring and vibrating diaphragm
Spacing be more than conductive sheet and vibrating diaphragm spacing.Barrier insulating layer is made of barrier dead ring and barrier insulating trip.Barrier insulation
Ring is fixed with conducting ring.Barrier insulating trip is fixed with conductive sheet.Barrier dead ring and conducting ring are fixed with protection ring.Back electrode
On offer multiple acoustic aperture.All acoustic aperture run through back electrode.Barrier insulating layer is provided with multiple anti-on the side of vibrating diaphragm
Adhesion convex block.
The connector assembly includes the first binding post and the 4th binding post.First binding post, the 4th binding post and vibrating diaphragm,
Conductive layer is separately connected.
Further, the material of the vibrating diaphragm, noise reduction band, noise reduction ring and conductive layer is polysilicon.The barrier insulation
The material of layer and silicon nitride passivation protective layer is silicon nitride.The etching stopping ring, vibrating diaphragm support ring, the first dead ring and
The material of two dead rings is silica.
Further, the back of the body chamber through substrate is opened up on the outer end face of the substrate.
Further, noise reduction band is provided between the outer edge of the vibrating diaphragm and the madial wall of the first dead ring.Described
It is provided with noise reduction ring between etching stopping ring and vibrating diaphragm support ring.The connector assembly further includes that the second binding post and third connect
Terminal.Second binding post and noise reduction band connection.Third binding post is connect with noise reduction ring.
Further, on the vibrating diaphragm same side internal diameter of each annular groove along the extrorse direction in vibrating diaphragm center successively etc.
Difference is incremented by.
The manufacturing method of the MEMS microphone is specific as follows：
Step 1: electro-deposition a layer thickness is the silica of 300nm~500nm on substrate, etching stopping ring is obtained
Blank body.
Step 2: electro-deposition a layer thickness is the amorphous silicon material of 300nm~500nm on etching stopping ring blank body,
Obtain the first amorphous silicon layer.To be divided on the first amorphous silicon layer by way of being etched after photoetching third binding post and mutually
Independent and coaxial arrangement noise reduction ring blank body, multiple secondary process rings.Noise reduction ring blank body is annealed, noise reduction is obtained
Ring.
Step 3: electro-deposition a layer thickness is the silica of 500nm~800nm on noise reduction ring, vibrating diaphragm support is obtained
Ring blank body.
Step 4: electro-deposition a layer thickness is the amorphous silicon material of 300nm~500nm on vibrating diaphragm support ring blank body,
Obtain the second amorphous silicon layer.
Step 5: by way of being etched after photoetching by the second amorphous silicon layer be divided into the first binding post, the second binding post,
Vibrating diaphragm blank body and noise reduction band blank body.Vibrating diaphragm blank body and noise reduction band blank body are independent mutually.First binding post connects with vibrating diaphragm
It connects.Second binding post and noise reduction band connection.Vibrating diaphragm young bird physically carries venthole.Noise reduction band blank body ring lives vibrating diaphragm blank body.
It will anneal in vibrating diaphragm blank body and noise reduction band, arrive vibrating diaphragm and noise reduction band.
Step 6: electro-deposition a layer thickness is the silicon dioxide insulator material of 500nm~800nm on vibrating diaphragm, the is obtained
One dead ring blank body.
Step 7: physically opening up multiple anti-adhesion via holes in the first dead ring young bird by way of being etched after photoetching.
Step 8: electro-deposition a layer thickness is that the silica of 1000nm~2000nm is exhausted on the first dead ring blank body
Edge material obtains the second dead ring blank body.
Step 9: physically opening up blind hole in the second dead ring young bird by way of being etched after photoetching.
Step 10: electro-deposition a layer thickness is the insulating silicon nitride material of 100nm~200nm on the second dead ring blank body
Material obtains barrier insulating layer blank body.Barrier insulating layer blank body is made of barrier dead ring blank body and barrier insulating trip.Resistance
Used outside insulated layer blank body forms multiple anti-adhesion convex blocks on the side of vibrating diaphragm.
Step 11: the amorphous silicon material that electro-deposition a layer thickness is 500~1000nm on barrier insulating layer blank body,
Obtain conductive layer blank body.Conductive layer blank body by conducting ring blank body and the conductive sheet set in blind hole at.
Step 12: removing the edge of barrier dead ring blank body and conducting ring blank body by way of being etched after photoetching
Part, and obtain the 4th binding post.4th binding post is connect with conductive layer blank body.Conductive layer blank body is annealed, is obtained
To barrier insulating layer and conductive layer.
Step 13: being removed by way of being etched after photoetching on the first binding post, the second binding post and third binding post
The silicon dioxide insulator material of covering.Then by sputtering technology the first binding post, the second binding post, third binding post and
Metal is covered on 4th binding post.
Step 14: on side of the conductive layer far from substrate and the second dead ring electro-deposition a layer thickness be 500nm~
The silicon nitride of 1000nm obtains silicon nitride passivation protective layer.Insulating silicon nitride ring, conductive layer and silicon nitride passivation protective layer composition
Back electrode.
Step 15: opening up out multiple acoustic aperture on back electrode by way of being etched after photoetching, and get rid of first
The silicon nitride covered on binding post, the second binding post, third binding post and the 4th binding post.
Step 16: etching back of the body chamber in the outer end face of substrate by way of being etched after photoetching.It carries on the back chamber and runs through substrate.
Step 17: being eroded in the middle part of etching stopping ring blank body and vibrating diaphragm support ring blank body with hydrofluoric acid, carved
Erosion stops ring and vibrating diaphragm support ring.
Step 18: being eroded in the first dead ring blank body and the second dead ring blank body by acoustic aperture with hydrofluoric acid
Center portion position obtains the first dead ring and the second dead ring.
Further, in step 2, mixed by way of adulterating in place while the first amorphous silicon layer of electro-deposition from
Son.In step 4, ion is mixed by way of adulterating in place while the second amorphous silicon layer of electro-deposition.In step 11,
Ion is mixed by way of adulterating in place while electro-deposition conductive layer blank body.
The invention has the advantages that：
1, the present invention by vibrating diaphragm by being fabricated to the high sensitivity that cyclic structure realizes microphone.
2, central part is presented close to vibrating diaphragm, state of the marginal portion far from vibrating diaphragm in back electrode of the invention.Due to vibrating diaphragm
Edge is not easy to vibrate, and the capacitance size that back electrode marginal portion is formed with vibrating diaphragm edge has a great impact to sensitivity.Make
Back electrode marginal portion far from vibrating diaphragm after, the capacitance that back electrode marginal portion and vibrating diaphragm edge are formed can be effectively reduced,
Effectively improve the sensitivity of microphone.
3, the present invention further weakens influence of the noise to signal by setting noise reduction band, noise reduction ring, realizes higher letter
It makes an uproar ratio.
4, the manufacturing method of the present invention is easily operated, is conducive to produce in enormous quantities.
Description of the drawings
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is the schematic top plan view of the present invention；
Fig. 3 is the sectional schematic diagram of the present invention；
Fig. 4 is the partial cutaway view of vibrating diaphragm in the present invention；
Fig. 5 is the schematic diagram after the completion of the manufacturing method of the present invention step 1；
Fig. 6 is the schematic diagram after the completion of the manufacturing method of the present invention step 2；
Fig. 7 is the combination of the secondary process ring and etching stopping ring blank body after the completion of the manufacturing method of the present invention step 2
Partial cutaway view；
Fig. 8 is the schematic diagram after the completion of the manufacturing method of the present invention step 3；
Fig. 9 is the schematic diagram after the completion of the manufacturing method of the present invention step 4；
Figure 10 is the schematic diagram after the completion of the manufacturing method of the present invention step 5；
Figure 11 is the schematic diagram that the manufacturing method of the present invention step 5 completes back vents；
Figure 12 is the schematic diagram after the completion of the manufacturing method of the present invention step 6；
Figure 13 is the schematic diagram after the completion of the manufacturing method of the present invention step 7；
Figure 14 is the schematic diagram after the completion of the manufacturing method of the present invention step 8；
Figure 15 is the schematic diagram after the completion of the manufacturing method of the present invention step 9；
Figure 16 is the schematic diagram after the completion of the manufacturing method of the present invention step 10；
Figure 17 is the schematic diagram after the completion of the manufacturing method of the present invention step 11；
Figure 18 is the schematic diagram after the completion of the manufacturing method of the present invention step 12；
Figure 19 is the schematic diagram after the completion of the manufacturing method of the present invention step 14；
Figure 20 is the schematic diagram after the completion of the manufacturing method of the present invention step 15；
Figure 21 is the schematic diagram after the completion of the manufacturing method of the present invention step 10 six；
Figure 22 is the schematic diagram after the completion of the manufacturing method of the present invention step 10 seven；
Figure 23 is the schematic diagram after the completion of the manufacturing method of the present invention step 10 eight.
Specific implementation mode
Below in conjunction with attached drawing, the invention will be further described.
Referring to Fig. 1,2 and 3, capacitive MEMS microphone, including substrate 1, vibrating diaphragm 2, back electrode, noise reduction band 4, noise reduction ring 5,
Connector assembly, etching stopping ring 9, vibrating diaphragm support ring 10, the first dead ring 11 and the second dead ring 12.
The back of the body chamber 6 through substrate 1 is opened up on the outer end face of substrate 1.Substrate 1, etching stopping ring 9, vibrating diaphragm support ring 10,
One dead ring 11, the second dead ring 12 are arranged in order stacked and are coaxially fixed together.Etching stopping ring 9 and vibrating diaphragm support ring 10
Between be provided with noise reduction ring 5.Vibrating diaphragm 2 is fixed with side of the vibrating diaphragm support ring 10 far from substrate 1.The outer edge of vibrating diaphragm 2 and first
Noise reduction band 4 is provided between the madial wall of dead ring 11.
Referring to Fig. 1 and 4, multiple annular grooves are offered on two sides of vibrating diaphragm 2.All annular grooves are same with vibrating diaphragm 2
Axis is arranged.The internal diameter of each annular groove is incremented by along the extrorse direction in 2 center of vibrating diaphragm successively equal difference on 2 same side of vibrating diaphragm.Vibrating diaphragm
Surface structure annular in shape, can improve device sensitivity, and noise reduction band accesses in signal processing circuit the influence for reducing noise.It shakes
The edge of film 2 offers venthole 21, prevents microphone from forming sealing space after packaging.
The madial wall of back electrode and the second dead ring 12 is fixed.Back electrode is arranged with the interval of vibrating diaphragm 2, forms vibration cavity 7
(space that back electrode, vibrating diaphragm 2, the first dead ring 11 and the second dead ring 12 are encircled into).Back electrode includes barrier insulating layer, leads
Electric layer and silicon nitride passivation protective layer.
Silicon nitride passivation protective layer is made of protection ring 316 and protection disk 313.Protection ring 316 is fixed with the second dead ring.
That side side evagination setting of the close vibrating diaphragm of disk 313, the setting of other side side indent is protected to be formed and be located in protection disk 313
The nearly film portion 33 of center portion position and remote film portion 34 positioned at protection disk 313 edge.
Conductive layer is made of conducting ring 312 and conductive sheet 315.Conducting ring 312 and remote film portion 34 on protection disk 313 are close to shaking
The side of film 2 is fixed, and ring lives nearly film portion 33.Conductive sheet 315 and nearly film portion 33 on protection disk 313 are solid close to the side of vibrating diaphragm 2
It is fixed.Conducting ring 312 is more than the spacing of conductive sheet 315 and vibrating diaphragm 2 with the spacing of vibrating diaphragm 2.
Barrier insulating layer is made of barrier dead ring 311 and barrier insulating trip 314.Obstruct dead ring 311 and conducting ring 312
It is fixed close to the side of vibrating diaphragm 2, and ring lives nearly film portion 33.It is solid close to the side of vibrating diaphragm 2 with conductive sheet 315 to obstruct insulating trip 314
It is fixed.Barrier dead ring and conducting ring are fixed with protection ring.
Multiple acoustic aperture 32 are offered on back electrode.All acoustic aperture 32 run through back electrode.Insulating layer is obstructed close to vibrating diaphragm 2
Multiple anti-adhesion convex blocks 31 are provided on side.Central part is presented close to vibrating diaphragm 2 in back electrode, and marginal portion is far from vibrating diaphragm 2
State.Since vibrating diaphragm edge is not easy to vibrate, the capacitance size that back electrode marginal portion is formed with vibrating diaphragm edge has sensitivity
Prodigious influence so that after the marginal portion of back electrode is far from vibrating diaphragm 2, back electrode marginal portion and vibrating diaphragm side can be effectively reduced
The capacitance that edge is formed, effectively improves the sensitivity of microphone.
Connector assembly includes the first binding post 84, the second binding post 81, third binding post 83 and the 4th binding post 82.First
Binding post 84, the second binding post 81, third binding post 83, the 4th binding post 82 with protection ring 316 fix, and with vibrating diaphragm 2, drop
Make an uproar band 4, noise reduction ring 5, conductive layer is separately connected.
Vibrating diaphragm 2, noise reduction band 4, noise reduction ring 5 and conductive layer material be polysilicon.Obstruct insulating layer and silicon nitride passivation
The material of protective layer is silicon nitride.Etching stopping ring 9, vibrating diaphragm support ring 10, the first dead ring 11 and the second dead ring 12
Material is silica.
Referring to Fig. 5 to Figure 23, the manufacturing method of the MEMS microphone is specific as follows：
Step 1: with reference to Fig. 5, electro-deposition a layer thickness is the titanium dioxide of 300nm~500nm on the inner end end face of substrate
Silicon insulating materials obtains 9 blank body of etching stopping ring.The effect of 9 blank body of etching stopping ring is the mistake prevented forming back of the body chamber
It is crossed in journey and carves damage microphone.
Step 2: with reference to Fig. 6, electro-deposition a layer thickness is on 9 side of the blank body far from substrate 1 of etching stopping ring
The amorphous silicon material (amorphous silicon α-Si, also known as amorphous silicon) of 300nm~500nm, obtains the first non-crystalline silicon
Layer.Ion is mixed by way of adulterating in place while the first amorphous silicon layer of electro-deposition.By way of being etched after photoetching
Third binding post and independent mutually and coaxial arrangement 5 blank body of noise reduction ring and multiple auxiliary will be divided on first amorphous silicon layer
Help processing ring.Multiple secondary process rings are corresponding with multiple annular grooves difference position on vibrating diaphragm 2.5 blank body ring residence of noise reduction ring
There is secondary process ring.The position relationship of 5 blank body of noise reduction ring and multiple secondary process rings is as shown in Figure 7.
5 blank body of noise reduction ring is annealed in quick anneal oven so that amorphous silicon is polysilicon, obtains noise reduction
Ring 5.Noise reduction ring 5 accesses being capable of abatement device noise in signal processing circuit.Multiple secondary process rings will be through after step 14
It is fallen in the back of the body chamber of substrate 1, in addition, secondary process ring can also fix silicon dioxide etching region with pair in removal process 14
Quasi- error；
Step 3: with reference to Fig. 8, electro-deposition a layer thickness is 500nm~800nm on side of the noise reduction ring 5 far from substrate 1
Silicon dioxide insulator material, obtain 10 blank body of vibrating diaphragm support ring.The 10 blank body of vibrating diaphragm support ring obtained due to electro-deposition
Consistency of thickness everywhere, therefore vibrating diaphragm support ring 10 is young physically in the presence of multiple convex annulars identical with each secondary process ring difference shape
It rises.
Step 4: with reference to Fig. 9, electro-deposition a layer thickness is on 10 side of the blank body far from substrate 1 of vibrating diaphragm support ring
The amorphous silicon material of 300nm~500nm obtains the second amorphous silicon layer.Since the second amorphous silicon layer that electro-deposition obtains is thick everywhere
Degree is consistent, therefore there are multiple annular grooves on two sides of the second amorphous silicon layer.While the second amorphous silicon layer of electro-deposition
Ion is mixed by way of adulterating in place.
Step 5: referring to Fig.1 0 and 11, the second amorphous silicon layer is divided into the first wiring by way of being etched after photoetching
Column, 4 blank body of the second binding post, 2 blank body of vibrating diaphragm and noise reduction band.2 blank body of vibrating diaphragm and 4 blank body of noise reduction band with mutually solely
It is vertical.First binding post is connect with vibrating diaphragm 2.Second binding post is connect with noise reduction band 4.Vibrating diaphragm 2 is young physically to carry venthole 21.Drop
4 blank body ring of band of making an uproar lives 2 blank body of vibrating diaphragm.2 blank body of vibrating diaphragm and noise reduction band 4 are annealed in quick anneal oven so that
Amorphous silicon is polysilicon, obtains vibrating diaphragm 2 and noise reduction band 4.
Step 6: referring to Fig.1 2, with ethyl orthosilicate (TEOS) thermal decomposition method electricity on side of the vibrating diaphragm 2 far from substrate 1
The silicon dioxide insulator material that a layer thickness is 500nm~800nm is deposited, 11 blank body of the first dead ring is obtained.
Step 7: referring to Fig.1 3, by way of being etched after photoetching the first dead ring 11 it is young physically open up it is multiple anti-
Adhesion via hole 111.
Step 8: referring to Fig.1 4, electro-deposition a layer thickness is on 11 side of the blank body far from substrate 1 of the first dead ring
The silicon dioxide insulator material of 1000nm~2000nm obtains 12 blank body of the second dead ring.Due to electro-deposition obtain second
12 blank body of dead ring consistency of thickness everywhere, therefore the second dead ring 12 is young physically exists and the first dead ring 11 is young physically prevents
111 identical secondary process hole of adhesion via hole.
Step 9: referring to Fig.1 5, in 12 blank body of the second dead ring far from 1 side of substrate by way of being etched after photoetching
Center on open up blind hole 121.The working depth etched after photoetching is consistent, therefore 121 bottom of blind hole retains secondary process hole.
Step 10: referring to Fig.1 6, use ethyl orthosilicate on 12 side of the blank body far from substrate 1 of the second dead ring
(TEOS) thermal decomposition method electro-deposition a layer thickness is the insulating silicon nitride material of 100nm~200nm, obtains barrier insulating layer blank
Body.Barrier insulating layer blank body is made of 311 blank body of barrier dead ring and the barrier insulating trip 314 in blind hole.Barrier
Insulating layer blank body forms multiple anti-adhesion convex blocks 31 on the side of vibrating diaphragm.Anti- adhesion convex block 31 can prevent vibrating diaphragm and the back of the body
Electrode adhesion.
Step 11: referring to Fig.1 7, electro-deposition a layer thickness is on side of the barrier insulating layer blank body far from substrate 1
The amorphous silicon material of 500~1000nm obtains conductive layer blank body.By mixing in place while electro-deposition conductive layer blank body
Miscellaneous mode mixes ion.Conductive layer blank body is made of 312 blank body of conducting ring and the conductive sheet 315 in blind hole.
Step 12: referring to Fig.1 8, barrier 311 blank body of dead ring and conducting ring are removed by way of being etched after photoetching
The marginal portion of 312 blank bodies, and obtain the 4th binding post.4th binding post is connect with conductive layer blank body.By conductive layer young bird
Body is annealed in quick anneal oven so that amorphous silicon is polysilicon, obtains barrier insulating layer and conductive layer, is formed
Back electrode structure.
Step 13: removing the first binding post 84, the second binding post 81 and third wiring by way of being etched after photoetching
The silicon dioxide insulator material covered on column 83 exposes polycrystalline silicon material.Then by sputtering technology in the first binding post
84, metal of the covering for lead packages on the second binding post 81, third binding post 83 and the 4th binding post 82.
Step 14: referring to Fig.1 9, one thickness of electro-deposition on side of the conductive layer far from substrate 1 and the second dead ring 12
Degree is the insulating silicon nitride material of 500nm~1000nm, obtains silicon nitride passivation protective layer.Insulating silicon nitride ring, conductive layer and
Silicon nitride passivation protective layer forms back electrode.
Step 15: with reference to Figure 20, multiple acoustic aperture are opened up out on back electrode by way of being etched after photoetching, and remove
Fall the silicon nitride covered on the first binding post 84, the second binding post 81, third binding post 83 and the 4th binding post 82.It is all
Acoustic aperture runs through back electrode.
Step 16: etching back of the body chamber 6 in the outer end face of substrate 1 by way of being etched after photoetching with reference to Figure 21.Carry on the back chamber 6
Through substrate 1.
Step 17: with reference to Figure 22,10 blank body of 9 blank body of etching stopping ring and vibrating diaphragm support ring is eroded with hydrofluoric acid
The silicon dioxide insulator material in centre exposes vibrating diaphragm 2.Etching stopping ring 9 and vibrating diaphragm support ring are obtained, at this point, multiple auxiliary
Processing ring is helped to be dropped out from the back of the body chamber 6 of substrate 1.
Step 18: with reference to Figure 23,11 blank body of the first dead ring and the second insulation are eroded by acoustic aperture with hydrofluoric acid
The centre of 12 blank body of ring, obtains the first dead ring 11 and the second dead ring 12, and forms vibration cavity 7.Back pole plate 3 with
Vibrating diaphragm 2 constitutes capacitance the two poles of the earth.
Claims (7)
1. capacitive MEMS microphone, including substrate, vibrating diaphragm, back electrode, connector assembly, etching stopping ring, vibrating diaphragm support ring,
One dead ring and the second dead ring；It is characterized in that：The substrate, etching stopping ring, vibrating diaphragm support ring, the first dead ring,
Second dead ring is arranged in order and is fixed together；Vibrating diaphragm is fixed in vibrating diaphragm support ring；It is opened up on two sides of vibrating diaphragm
There are multiple annular grooves；All annular grooves are coaxially disposed with vibrating diaphragm；The edge of vibrating diaphragm offers venthole；
The madial wall of the back electrode and the second dead ring is fixed；Back electrode is arranged with vibrating diaphragm interval；Back electrode includes barrier
Insulating layer, conductive layer and silicon nitride passivation protective layer；Silicon nitride passivation protective layer is made of protection ring and protection disk；Protection ring with
Second dead ring is fixed；Protect that side side evagination setting of the close vibrating diaphragm of disk, the setting of other side side indent；
The conductive layer by conducting ring and conductive sheet set at；The conducting ring and conductive sheet is fixed with protection disk；It is conductive
The internal diameter of ring is greater than or equal to the diameter of conductive sheet；Conductive sheet and conducting ring are fixed with protection disk；Between conducting ring and vibrating diaphragm
Away from the spacing more than conductive sheet and vibrating diaphragm；Barrier insulating layer is made of barrier dead ring and barrier insulating trip；Obstruct dead ring with
Conducting ring is fixed；Barrier insulating trip is fixed with conductive sheet；Barrier dead ring and conducting ring are fixed with protection ring；It is opened on back electrode
Equipped with multiple acoustic aperture；All acoustic aperture run through back electrode；Barrier insulating layer is provided with multiple anti-adhesions on the side of vibrating diaphragm
Convex block；
The connector assembly includes the first binding post and the 4th binding post；First binding post, the 4th binding post and vibrating diaphragm, conduction
Layer is separately connected.
2. capacitive MEMS microphone according to claim 1, it is characterised in that：The vibrating diaphragm, noise reduction band, noise reduction ring and
The material of conductive layer is polysilicon；The material of the barrier insulating layer and silicon nitride passivation protective layer is silicon nitride；It is described
Etching stopping ring, vibrating diaphragm support ring, the material of the first dead ring and the second dead ring are silica.
3. capacitive MEMS microphone according to claim 1, it is characterised in that：It opens up and passes through on the outer end face of the substrate
Wear the back of the body chamber of substrate.
4. capacitive MEMS microphone according to claim 1, it is characterised in that：The outer edge of the vibrating diaphragm and first is absolutely
Noise reduction band is provided between the madial wall of edge ring；It is provided with noise reduction ring between the etching stopping ring and vibrating diaphragm support ring；Institute
The connector assembly stated further includes the second binding post and third binding post；Second binding post and noise reduction band connection；Third binding post with
Noise reduction ring connects.
5. capacitive MEMS microphone according to claim 1, it is characterised in that：Each annular on the vibrating diaphragm same side
The internal diameter of slot is incremented by along the extrorse direction in vibrating diaphragm center successively equal difference.
6. such as the manufacturing method for the capacitive MEMS microphone that claim 4 is stated, it is characterised in that：
Step 1: electro-deposition a layer thickness is the silica of 300nm~500nm on substrate, etching stopping ring blank is obtained
Body；
Step 2: electro-deposition a layer thickness is the amorphous silicon material of 300nm~500nm on etching stopping ring blank body, obtain
First amorphous silicon layer；Third binding post and mutually independence will be divided on the first amorphous silicon layer by way of being etched after photoetching
And noise reduction ring blank body, the multiple secondary process rings of coaxial arrangement；Noise reduction ring blank body is annealed, noise reduction ring is obtained；
Step 3: electro-deposition a layer thickness is the silica of 500nm~800nm on noise reduction ring, it is young to obtain vibrating diaphragm support ring
Body；
Step 4: electro-deposition a layer thickness is the amorphous silicon material of 300nm~500nm on vibrating diaphragm support ring blank body, obtain
Second amorphous silicon layer；
Step 5: the second amorphous silicon layer is divided into the first binding post, the second binding post, vibrating diaphragm by way of being etched after photoetching
Blank body and noise reduction band blank body；Vibrating diaphragm blank body and noise reduction band blank body are independent mutually；First binding post is connect with vibrating diaphragm；The
Two binding posts and noise reduction band connection；Vibrating diaphragm young bird physically carries venthole；Noise reduction band blank body ring lives vibrating diaphragm blank body；By vibrating diaphragm
It anneals in blank body and noise reduction band, arrives vibrating diaphragm and noise reduction band；
Step 6: electro-deposition a layer thickness is the silicon dioxide insulator material of 500nm~800nm on vibrating diaphragm, first is obtained absolutely
Edge ring blank body；
Step 7: physically opening up multiple anti-adhesion via holes in the first dead ring young bird by way of being etched after photoetching；
Step 8: electro-deposition a layer thickness is the silicon dioxide insulator material of 1000nm~2000nm on the first dead ring blank body
Material, obtains the second dead ring blank body；
Step 9: physically opening up blind hole in the second dead ring young bird by way of being etched after photoetching；
Step 10: electro-deposition a layer thickness is the insulating silicon nitride material of 100nm~200nm on the second dead ring blank body,
Obtain barrier insulating layer blank body；Barrier insulating layer blank body is made of barrier dead ring blank body and barrier insulating trip；Barrier
Insulating layer blank body forms multiple anti-adhesion convex blocks on the side of vibrating diaphragm；
Step 11: the amorphous silicon material that electro-deposition a layer thickness is 500~1000nm on barrier insulating layer blank body, obtains
Conductive layer blank body；Conductive layer blank body by conducting ring blank body and the conductive sheet set in blind hole at；
Step 12: removing the edge part of barrier dead ring blank body and conducting ring blank body by way of being etched after photoetching
Point, and obtain the 4th binding post；4th binding post is connect with conductive layer blank body；Conductive layer blank body is annealed, is obtained
Obstruct insulating layer and conductive layer；
It is covered on the first binding post, the second binding post and third binding post Step 13: being removed by way of being etched after photoetching
Silicon dioxide insulator material；Then by sputtering technology in the first binding post, the second binding post, third binding post and the 4th
Metal is covered on binding post；
Step 14: on side of the conductive layer far from substrate and the second dead ring electro-deposition a layer thickness be 500nm~
The silicon nitride of 1000nm obtains silicon nitride passivation protective layer；Insulating silicon nitride ring, conductive layer and silicon nitride passivation protective layer composition
Back electrode；
Step 15: opening up out multiple acoustic aperture on back electrode by way of being etched after photoetching, and get rid of in the first wiring
The silicon nitride covered on column, the second binding post, third binding post and the 4th binding post；
Step 16: etching back of the body chamber in the outer end face of substrate by way of being etched after photoetching；It carries on the back chamber and runs through substrate；
Step 17: being eroded in the middle part of etching stopping ring blank body and vibrating diaphragm support ring blank body with hydrofluoric acid, etch-stop is obtained
Only ring and vibrating diaphragm support ring；
Step 18: the central part of the first dead ring blank body and the second dead ring blank body is eroded by acoustic aperture with hydrofluoric acid
Position, obtains the first dead ring and the second dead ring.
7. according to the manufacturing method for the capacitive MEMS microphone that claim 6 is stated, it is characterised in that：It is heavy in electricity in step 2
Ion is mixed by way of adulterating in place while the first amorphous silicon layer of product；In step 4, in the second amorphous silicon layer of electro-deposition
While ion is mixed by way of adulterating in place；In step 11, while electro-deposition conductive layer blank body by
The mode of position doping mixes ion.
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