CN102162138A - Doped gas supply equipment and doped gas supply method - Google Patents
Doped gas supply equipment and doped gas supply method Download PDFInfo
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- CN102162138A CN102162138A CN2011100092103A CN201110009210A CN102162138A CN 102162138 A CN102162138 A CN 102162138A CN 2011100092103 A CN2011100092103 A CN 2011100092103A CN 201110009210 A CN201110009210 A CN 201110009210A CN 102162138 A CN102162138 A CN 102162138A
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Abstract
The invention provides doped gas supply equipment and a doped gas supply method. The doped gas supply equipment comprises a first doped gas source, a second doped gas source, a first gas switching device and a first gas mass velocity controller, wherein the input end of the first gas switching device is connected to the first doped gas source and the second doped gas source so as to connect the first doped gas source and/or the second doped gas source; and the first gas mass velocity controller is connected to the output end of the first gas switching device. The doped gas supply equipment and the doped gas supply method can obtain epitaxial film resistivity adjusting capacity of wide range.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of impurity gas supply equipment that in the epitaxial film growth technique, uses and impurity gas Supply Method.
Background technology
In recent years, unicircuit (IC) the silicon epitaxial film technology that manufacturing company adopted just progressively develops.The development pole the earth of silicon epitaxial film technology is given the credit to the silicon epitaxy improvement of Manufacturing Technology that is widely used.A key characteristic of silicon epitaxial film is exactly film resiativity or doping content.The performance of various power M0SFET (metal-oxide layer-semi-conductor-field-effect transistor(FET)) device aspect voltage rating depends on that epitaxial film mixes and thickness.For many technologies and device developer, find the optimum doping level and select doping type always the most challenging.
All are different on extension film thickness and resistivity level usually for the different production lines that are used for the different capacity device.Therefore, for the process exploitation personnel, be necessary for different technology provides competent selection or handiness in time, and this to come into the market apace for product innovation and keep the competitive power also be vital.
In the development phase, need test in a large number obtain desired doping and/or resistivity curve and with the corresponding concentration level of target thickness, thereby realize the device performance of expectation.Restriction that may exist and difficulty are wrong doping type and/or wrong doping content thus.Especially, for the new product development that has designed and/or introduce in the works, this can cause very serious problem.
Therefore, wish to propose a kind of technical scheme that can obtain the epitaxial film resistivity regulating power of relative broad range.
Summary of the invention
An object of the present invention is provides a kind of technical scheme that can obtain the epitaxial film resistivity regulating power of relative broad range by equipment for customizing gas supply line configuring.
According to a first aspect of the invention, provide a kind of impurity gas supply equipment, it comprises: first dopant gas source; Second dopant gas source; The first gas shifter, its input terminus are connected to described first dopant gas source and described second dopant gas source, so that connect described first dopant gas source and/or described second dopant gas source; And the first gas mass velocity controller, it is connected to the output terminal of the described first gas shifter.
According to a first aspect of the invention,, can realize that large-scale concentration of dopant changes, to be used for realizing utilizing individual equipment to finish adjusting of epitaxial film resistivity or optimization by the gas shifter is provided; That is, can obtain the epitaxial film resistivity regulating power of relative broad range.
In above-mentioned impurity gas supply equipment, described impurity gas supply equipment also comprises: first sources of hydrogen; The second gas mass velocity controller that links to each other with described first sources of hydrogen; And first mixing tank, it is connected to the output terminal of the described first gas mass velocity controller and the output terminal of the described second gas mass velocity controller.
In above-mentioned impurity gas supply equipment, described impurity gas supply equipment also comprises: second sources of hydrogen, its input terminus with the described first gas shifter links to each other, and is used for clearing up when the described first gas shifter switches between different impurity gass the described first gas shifter.
In above-mentioned impurity gas supply equipment, the described first gas shifter comprises: the gas safety detector is used to detect the gas leakage of the described first gas shifter.
In above-mentioned impurity gas supply equipment, the described first gas shifter comprises: check valve, it is disposed on the air flow line, to prevent the backflow of gas towards gas supply source.
According to a second aspect of the invention, provide a kind of impurity gas Supply Method, described impurity gas Supply Method comprises step: first dopant gas source is provided; Second dopant gas source is provided; The first gas shifter is provided, and its input terminus is connected to described first dopant gas source and described second dopant gas source, so that connect described first dopant gas source and/or described second dopant gas source; And provide the first gas mass velocity controller, and be connected to the output terminal of the described first gas shifter.
In above-mentioned impurity gas Supply Method, described impurity gas Supply Method also comprises step: first sources of hydrogen is provided; The second gas mass velocity controller that links to each other with described first sources of hydrogen is provided; And provide first mixing tank, and be connected to the output terminal of the described first gas mass velocity controller and the output terminal of the described second gas mass velocity controller.
In above-mentioned impurity gas Supply Method, described impurity gas Supply Method also comprises step: second sources of hydrogen is provided, and its input terminus with the described first gas shifter is linked to each other, be used for when the described first gas shifter switches, clearing up the described first gas shifter between different impurity gass.
In above-mentioned impurity gas Supply Method, described impurity gas Supply Method also comprises step: provide the gas safety detector, to detect the gas leakage of the described first gas shifter.
In above-mentioned impurity gas Supply Method, described impurity gas Supply Method also comprises step: check valve is provided, and it is disposed on the air flow line, to prevent the backflow of gas towards gas supply source.
It will be appreciated by persons skilled in the art that a second aspect of the present invention is corresponding with first aspect present invention, can realize the beneficial effect of realizing according to the equipment of first aspect present invention equally.
Description of drawings
In conjunction with the accompanying drawings, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and feature the present invention by with reference to following detailed, wherein:
Fig. 1 shows the synoptic diagram according to the impurity gas supply equipment of prior art.
Fig. 2 shows the synoptic diagram according to the impurity gas supply equipment of the embodiment of the invention.
Fig. 3 shows the synoptic diagram of impurity gas supply equipment according to another embodiment of the present invention.
Need to prove that accompanying drawing is used to illustrate the present invention, and unrestricted the present invention.
Embodiment
In order to make content of the present invention clear and understandable more, content of the present invention is described in detail below in conjunction with specific embodiments and the drawings.
Generally, single-wafer epitaxy technique reactor possesses the equipment of a mixing and doping ability usually, makes it possible to be connected directly to the doped source supply circuit from the equipment gas panels.The user can buy another equipment with mixing ability, so that can select to have controlled dilution another doped source type.The mixing ability has guaranteed that the user can be by the hydrogen (H to be connected with mixer apparatus equally
2) further dilute, regulate the doped level of epitaxial film.The gas flow rate of hotchpotch and hydrogen is all controlled by the processing parameter set-point by gas mass velocity controller (MFC).This is a kind of default configuration type of doped source.The another kind of default configuration type of the doped source that equipment manufacturers provide is to make directly doping inject circuit and do not possess the dilution capacity that links to each other with the main technique collecting tubule.
Fig. 1 shows the synoptic diagram according to the impurity gas supply equipment of prior art.As shown in the figure, the first gas mass velocity controller MFC1 controls first impurity gas, and the second gas mass velocity controller MFC2 controls hydrogen, and first impurity gas and hydrogen mix in first mixing tank subsequently.On the other hand, the 3rd gas mass velocity controller MFC3 controls hydrogen, and the 4th gas mass velocity controller MFC4 controls second impurity gas, and second impurity gas and hydrogen mix in second mixing tank subsequently.At last, the mixed gas of first mixing tank is provided for processes (shown in arrow among the figure) with the mixed gas of second mixing tank.
Fig. 2 shows the synoptic diagram according to the impurity gas supply equipment of the embodiment of the invention.Embodiments of the invention have adopted and have been installed in two the gas shifters between the opening connector of going into that doped source supply circuit and mixing and doping thing inject circuit.Accommodate the interconnection structure of gas supply circuit in the gas shifter, and wherein dispose and be used for the switch unit (not shown) that between different impurity gas supply circuits, switches, for example switch or valve.
As shown in Figure 2, first impurity gas and second impurity gas all are connected to the first gas shifter, thereby can connect desired gas (first impurity gas and/or second impurity gas) as required.The first gas shifter is connected to the first gas mass velocity controller MFC1 subsequently with the mass velocity of controlling flow through the gas of the first gas shifter.Subsequently, the flow through gas of the first gas mass velocity controller MFC1 combines with the hydrogen of the second gas mass velocity controller MFC2 that flows through at the first mixing tank place.
Similarly, the 3rd impurity gas and the 4th impurity gas all are connected to the second gas shifter, thereby can connect desired gas (the 3rd impurity gas and/or the 4th impurity gas) as required.The second gas shifter is connected to the 4th gas mass velocity controller MFC4 subsequently with the mass velocity of controlling flow through the gas of the second gas shifter.Subsequently, the flow through gas of the 4th gas mass velocity controller MFC4 combines with the hydrogen of the 3rd gas mass velocity controller MFC3 that flows through at the second mixing tank place.
At last, the mixed gas of first mixing tank is provided for processes (shown in arrow among the figure) with the mixed gas of second mixing tank, for example is used for CVD (chemical vapour deposition) technology.Wherein, various impurity gass can be but be not limited to be for example to have the PH of specific concentrations
3, AsH
3, or B
2H
9Deng.
Further, in the favourable improvement of the foregoing description, also dispose gas leakage prevention detector and check valve in these gas shifters, check valve is placed on the air flow line rightly, to prevent any backflow towards gas supply source.
Alternatively, in another specific embodiment of the present invention, the first gas shifter and/or the second gas shifter also can connect another hydrogen (H
2) the supply circuit, it is connected between the different impurity gas supply circuits.Cleaning mixing and doping circuit when described another hydrogen hydrogen supply circuit is used for switching between these different impurity gass supply circuits.Fig. 3 shows the synoptic diagram according to the impurity gas supply equipment of this another embodiment of the present invention.As can be seen, the first gas shifter and the second gas shifter all are connected to sources of hydrogen.And, it will be understood by those skilled in the art that, under the situation that does not have special processing requirement, be connected with the first gas shifter sources of hydrogen, the sources of hydrogen that is connected with the second gas shifter and with the 3rd gas mass velocity controller MFC3 and sources of hydrogen that the 4th gas mass velocity controller MFC4 is connected in two or all can be same sources of hydrogen, they also can be different sources of hydrogen certainly.
As can be seen, by adopting the gas shifter, can be provided with by processing parameter and directly dilute unnecessary two doped source.
In the example of embodiment, multiple doping type be can use, and two gas shifters (the first gas shifter and the second gas shifter) and two kinds of different mixing and doping thing gas mass velocity controller sizes (the first mixing and doping thing gas mass velocity controller size and the second mixing and doping thing gas mass velocity controller size) adopted.Thereby in this example, a kind of doping type may have relatively more wide range of concentrations dilution.
And, can suppose that the second mixing and doping thing gas mass velocity controller size is 1.5 times of the sizes of the first mixing and doping thing gas mass velocity controller; The size of population of supposing mixing and doping thing gas mass velocity controller is A; Suppose the mixing and doping thing than being B%; The size of population of supposing diluted in hydrogen gas mass velocity controller is C; Suppose that concentration of dopant is D; Suppose that the hotchpotch injection is provided with the parameter size and is E.
Then have: the first mixing and doping logistics speed is:
Relative concentration X1=D1 * C * E,
The second mixing and doping logistics speed is:
Relative concentration X2=D2 * C * E,
Therefore, adopt the concentration range gain that obtains after identical starting point concentration and the two kinds of different mixing and doping thing gas mass velocity controller sizes to be:
That is to say, adopt the concentration range gain that obtains after identical starting point concentration and the two kinds of different mixing and doping thing gas mass velocity controller sizes to be substantially equal to the ratio of two kinds of different mixing and doping thing gas mass velocity controller sizes.
By the analysis of above-mentioned example, it will be appreciated by persons skilled in the art that and can make amendment described example, for example can also select four kinds of identical or dissimilar (or more) doped source that are connected with two gas shifters.
In a word,, can realize that large-scale concentration of dopant changes, to be used for realizing utilizing individual equipment to finish adjusting of epitaxial film resistivity or optimization by utilizing the gas shifter.
It will be apparent to those skilled in the art that and to carry out various changes and distortion to the present invention without departing from the scope of the invention.Described embodiment only is used to illustrate the present invention, rather than restriction the present invention; The present invention is not limited to described embodiment, but only is defined by the following claims.
Claims (10)
1. an impurity gas supply equipment is characterized in that, comprising:
First dopant gas source;
Second dopant gas source;
The first gas shifter, its input terminus are connected to described first dopant gas source and described second dopant gas source, so that connect described first dopant gas source and/or described second dopant gas source; And
The first gas mass velocity controller, it is connected to the output terminal of the described first gas shifter.
2. impurity gas supply equipment according to claim 1 is characterized in that, described impurity gas supply equipment also comprises:
First sources of hydrogen;
The second gas mass velocity controller that links to each other with described first sources of hydrogen; And
First mixing tank, it is connected to the output terminal of the described first gas mass velocity controller and the output terminal of the described second gas mass velocity controller.
3. impurity gas supply equipment according to claim 1 and 2, it is characterized in that, described impurity gas supply equipment also comprises: second sources of hydrogen, its input terminus with the described first gas shifter links to each other, and is used for clearing up when the described first gas shifter switches between different impurity gass the described first gas shifter.
4. impurity gas supply equipment according to claim 1 and 2 is characterized in that, the described first gas shifter comprises: the gas safety detector is used to detect the gas leakage of the described first gas shifter.
5. impurity gas supply equipment according to claim 1 and 2 is characterized in that, the described first gas shifter comprises: check valve, it is disposed on the air flow line, to prevent the backflow of gas towards gas supply source.
6. an impurity gas Supply Method is characterized in that, described impurity gas Supply Method comprises step:
First dopant gas source is provided;
Second dopant gas source is provided;
The first gas shifter is provided, and its input terminus is connected to described first dopant gas source and described second dopant gas source, so that connect described first dopant gas source and/or described second dopant gas source; And
The first gas mass velocity controller is provided, and is connected to the output terminal of the described first gas shifter.
7. impurity gas Supply Method according to claim 6 is characterized in that, described impurity gas Supply Method also comprises step:
First sources of hydrogen is provided;
The second gas mass velocity controller that links to each other with described first sources of hydrogen is provided; And
First mixing tank is provided, and is connected to the output terminal of the described first gas mass velocity controller and the output terminal of the described second gas mass velocity controller.
8. according to claim 6 or 7 described impurity gas Supply Methods, it is characterized in that described impurity gas Supply Method also comprises step:
Second sources of hydrogen is provided, and its input terminus with the described first gas shifter is linked to each other, be used for when the described first gas shifter switches, clearing up the described first gas shifter between different impurity gass.
9. according to claim 6 or 7 described impurity gas Supply Methods, it is characterized in that described impurity gas Supply Method also comprises step:
Provide the gas safety detector, to detect the gas leakage of the described first gas shifter.
10. according to claim 6 or 7 described impurity gas Supply Methods, it is characterized in that described impurity gas Supply Method also comprises step:
Check valve is provided, and it is disposed on the air flow line, to prevent the backflow of gas towards gas supply source.
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| CN2011100092103A CN102162138A (en) | 2011-01-17 | 2011-01-17 | Doped gas supply equipment and doped gas supply method |
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| CN2011100092103A CN102162138A (en) | 2011-01-17 | 2011-01-17 | Doped gas supply equipment and doped gas supply method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325665A (en) * | 2013-05-28 | 2013-09-25 | 上海宏力半导体制造有限公司 | Forming method of polycrystalline silicon layer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671484A1 (en) * | 1994-03-10 | 1995-09-13 | Gi Corporation | Gas flow system for CVD reactor |
| EP1184489A2 (en) * | 2000-09-01 | 2002-03-06 | Riken | Impurity doping method for semiconductor as well as system therefor and semiconductor materials prepared thereby |
-
2011
- 2011-01-17 CN CN2011100092103A patent/CN102162138A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0671484A1 (en) * | 1994-03-10 | 1995-09-13 | Gi Corporation | Gas flow system for CVD reactor |
| EP1184489A2 (en) * | 2000-09-01 | 2002-03-06 | Riken | Impurity doping method for semiconductor as well as system therefor and semiconductor materials prepared thereby |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325665A (en) * | 2013-05-28 | 2013-09-25 | 上海宏力半导体制造有限公司 | Forming method of polycrystalline silicon layer |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140507 |
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Effective date of registration: 20140507 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20110824 |