CN103602961B - A kind of film coating method with the crystal silicon solar energy battery of high shunting resistance - Google Patents
A kind of film coating method with the crystal silicon solar energy battery of high shunting resistance Download PDFInfo
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- CN103602961B CN103602961B CN201310605978.6A CN201310605978A CN103602961B CN 103602961 B CN103602961 B CN 103602961B CN 201310605978 A CN201310605978 A CN 201310605978A CN 103602961 B CN103602961 B CN 103602961B
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Abstract
The invention discloses a kind of film coating method with the crystal silicon solar energy battery of high shunting resistance, comprise and adopt tubular type PECVD depositing antireflection film, during tubular type PECVD plated film, in body of heater, temperature is set as from fire door successively to stove tail: 380 ~ 420 DEG C, 370 ~ 410 DEG C, 360 ~ 400 DEG C, 360 ~ 400 DEG C, 360 ~ 400 DEG C.The method can solve in prior art the shunting resistance of the crystal silicon solar energy battery obtained when adopting tubular type PECVD plated film problem on the low side, can improve the shunting resistance of crystal silicon solar energy battery.
Description
Technical field
The invention belongs to area of solar cell, be specifically related to a kind of film coating method with the crystal silicon solar energy battery of high shunting resistance.
Background technology
At present, the preparation process of crystal silicon solar cell sheet comprise making herbs into wool, phosphorous diffusion, quarter limit, the operation such as plating passive film, print positive electrode and negative potential, wherein coated with antireflection film plays a very important effect in whole solar battery sheet production process.
Present stage, crystal silicon solar cell sheet ensured this future development to raising efficiency and 25 years power losses, and the efficiency decay of cell piece and the direct acting factor of power loss are exactly the plated film stage, be the impact of plated film on shunting resistance in the topmost factor of this one-phase.Plated film generally adopts board-like PECVD and tubular type PECVD at present, the shunting resistance of the solar battery sheet wherein after tubular type PECVD plated film will well below the shunting resistance of the solar battery sheet after board-like PECVD plated film, cell parallel resistance after tubular type PECVD plated film is at about 100 Ω, cell parallel resistance after board-like PECVD plated film is at about 400 Ω, in such crystal silicon solar cell sheet, the efficiency decay of tubular type PECVD plated film sheet is greater than board-like PECVD plated film sheet, makes a big impact to crystalline silicon battery plate efficiency and power loss.
In prior art, in order to keep the homogeneity of plated film color, special gas (the special gas of general ionization, be generally ammonia and silane) time pulse turn-off time be 33 or 36 μ s, in order to ensure plated film production capacity, so be generally 4000-4500W, temperature generally at about 450 DEG C at the power of ionization steps, in whole coating process, generally not can take into account the impact of plated film on solar cell shunting resistance.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of film coating method with the crystal silicon solar energy battery of high shunting resistance, the method can solve in prior art the shunting resistance of the crystal solar cell adopting tubular type PECVD plated film to obtain problem on the low side, improves the shunting resistance of crystal silicon chip solar cell.
Technical problem to be solved by this invention is achieved by the following technical solution: a kind of film coating method with the crystal silicon solar energy battery of high shunting resistance, comprise and adopt tubular type PECVD depositing antireflection film, during tubular type PECVD plated film, in body of heater, temperature is set as from fire door successively to stove tail: 380 ~ 420 DEG C, 370 ~ 410 DEG C, 360 ~ 400 DEG C, 360 ~ 400 DEG C, 360 ~ 400 DEG C.
In whole technological process, temperature is all set as from fire door successively to stove tail: 380 ~ 420 DEG C, 370 ~ 410 DEG C, 360 ~ 400 DEG C, 360 ~ 400 DEG C, 360 ~ 400 DEG C, so just can ensure the stability of temperature in whole technological process, make in whole technological process, using temperature as one quantitatively, when adjusting blue film thickness and blue film specific refractory power, the impact of temperature need not be considered, for debugging is provided convenience.
In the present invention, in whole coating process process, comparatively ordinary process temperature is low for temperature, mainly considers, silicon chip and edge are more easily affected at relatively high temperatures, just as the phosphorous diffusion stage.But because plated film phase temperature will well below temperature during phosphorous diffusion, so in coating process, temperature is less on the impact of plating membrane surface, almost can't see, but just can embody the impact at the edge of plated film sheet, so just tying UNICOM than being easier to cause edge P to tie with N, causing edge to leak electricity, the shunting resistance of cell piece is diminished.
As improvement of the present invention: in order to not affect the homogeneity of blue film thickness and film thickness at a lower temperature, so pulse turn-off time is reduced, ionize power during special gas when increasing plated film simultaneously, power regulation when tubular type PECVD plated film being ionized special gas is 4500 ~ 5500W, and the pulse turn-off time of this power is 30 μ s.
It is more abundant that the increase of power and pulse turn-off time are adjusted to that 30 μ s can make special gas ionize, making up the ionization special gas time increased because reducing temperature in whole coating process process, making the not change before and after temperature change of whole technological process time used.
As a further improvement on the present invention, the present invention increases a kind of voltage stabilizing gas when tubular type PECVD plated film in body of heater except original special gas ammonia and silane, described voltage stabilizing gas is nitrogen, the flow of described nitrogen is 8 ~ 12slm(per minute standard liter), because pulse turn-off time is adjusted to 30 μm, so want to make the blue film thickness of plated film sheet homogeneity in sheet be guaranteed, a kind of participation must be increased ionize and can go to make ionized gas even in boiler tube everywhere as the gas of carrier gas, keep boiler tube inherence ionization special gas staged pressure balanced everywhere, so select price relatively cheap and the nitrogen not affecting blue film quality as voltage stabilizing gas.
Compared with prior art, the present invention has following beneficial effect:
(1) the present invention is by reducing the temperature of plated film, can improve the shunting resistance of crystal silicon chip to 400 Ω (ohm) left and right;
(2) the present invention is by increasing the power of tubular type PECVD device and reducing pulse turn-off time, and after ensure that the temperature reducing whole coating process process, the time does not change.
(3) the present invention by increasing voltage stabilizing gas nitrogen in tubular type PECVD device, what plated film silicon chip different positions can be made to contact with ionized gas is more even, adding by nitrogen, the homogeneity of the blue film thickness of plated film sheet is very good, there will not be the problem that on single silicon chip, color is different.
Accompanying drawing explanation
Fig. 1 is the structural representation of tubular type PECVD device provided by the invention;
Fig. 2 be the embodiment of the present invention 1 provide PECVD device plated film time temperature variation schematic diagram.
Embodiment
embodiment 1
The tubular type PECVD that the present embodiment adopts can be centrotherm, the brand such as seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD depositing antireflection film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 420 DEG C into, 410 DEG C, 400 DEG C, 380 DEG C, 380 DEG C (Fig. 2), and keep other techniques constant, by the crystal silicon chip after plated film, through printing backplane, back surface field, after the operation sintering such as positive grid, preparation becomes finished product solar battery sheet, through solar battery sheet battery performance testing system halm system testing, draw the every battery performance of solar battery sheet, by solar battery sheet shunting resistance contrast before and after process reform, result is as following table 1:
The performance contrast of the solar battery sheet that the performance perameter of the solar battery sheet that table 1 adopts the present embodiment tubular type PECVD depositing antireflection film to make and the antireflective coating of employing tubular type PECVD common process deposition are made
Experimental analysis: reduced by temperature, there is the difference of 0.01% with common process in photovoltaic cell efficiency of conversion, difference so is in industry negligible, but in shunting resistance, advantage very obvious, have the raising of about 250 Ω compared with common process shunting resistance, leakage current reduces also obvious simultaneously.
embodiment 2
The tubular type PECVD that the present embodiment adopts can be centrotherm, the brand such as seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD depositing antireflection film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 420 DEG C into, 410 DEG C, 400 DEG C, 380 DEG C, 380 DEG C, after temperature reduction, the whole process time can be caused elongated, so 5500W can be adjusted to by regulating aura ionization power by the 4500W of common process, and pulse turn-off time is adjusted to 30 μm by 33 μm or 36 μm of common process, after the adjustment of pulse turn-off time makes reduction temperature, the whole process time does not change, but plated film blade is interior and between sheet, change has appearred in film uniformity, thickness difference increases in plated film blade and between sheet, table 2 specific as follows:
The thickness of cell piece antireflective coating and homogeneity changing conditions after table 2 Modulating Power and pulse turn-off time
Experimental analysis: changed by power, not quite, the thickness between plated film sheet and plated film sheet and in plated film blade differs greatly for overall thickness mean value and target value difference.
embodiment 3
The tubular type PECVD that the present embodiment adopts can be centrotherm, the brand such as seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD depositing antireflection film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 420 DEG C into, 410 DEG C, 400 DEG C, 380 DEG C, 380 DEG C, after temperature reduction, the whole process time can be caused elongated, so 5500W can be adjusted to by regulating aura ionization power by the 4500W of common process, and pulse turn-off time is adjusted to 30 μm by 33 μm or 36 μm of common process, pulse after making reduction temperature the whole process time do not change, but plated film blade is interior and between sheet, change has appearred in film uniformity, thickness difference increases in plated film blade and between sheet, because between plated film sheet and plated film sheet inside thickness differs greatly, therefore under the prerequisite not affecting processing requirement, a kind of gas not participating in ionization reaction is increased in boiler tube, because nitrogen price is relatively cheap and do not affect blue film quality, so select nitrogen as voltage stabilizing gas, ion after the increase of nitrogen can make special gas ionize is more even in boiler tube, homogeneity is clearly better, the present embodiment technique thickness data cases sees the following form 3, the performance contrast of the photovoltaic cell that the performance perameter of the photovoltaic cell adopting the present embodiment tubular type PECVD depositing antireflection film to make and the antireflective coating of employing tubular type PECVD common process deposition are made sees the following form 4.
Table 3 lower the temperature and Modulating Power and pulse turn-off time and increase nitrogen time the thickness of cell piece passive film and homogeneity changing conditions
The performance perameter of the photovoltaic cell that table 4 adopts the present embodiment tubular type PECVD depositing antireflection film to make and employing conventional tubular PECVD deposit the performance contrast of the photovoltaic cell that antireflective is made
Experimental analysis: by the process debugging in embodiment 1,2 and embodiment 3, present invention process advantage in film uniformity and shunting resistance is all obvious.
embodiment 4
The tubular type PECVD that the present embodiment adopts can be centrotherm, the brand such as seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD depositing antireflection film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 380 DEG C into, 370 DEG C, 360 DEG C, 360 DEG C, 360 DEG C, and keep other techniques constant, by the crystal silicon chip after plated film, through printing backplane, back surface field, after the operation sintering such as positive grid, preparation becomes finished product solar battery sheet, through solar battery sheet battery performance testing system halm system testing, draw the every battery performance of solar battery sheet, found by solar battery sheet shunting resistance contrast before and after process reform, adopt present invention process significantly can increase the shunting resistance of solar battery sheet.
embodiment 5
The tubular type PECVD that the present embodiment adopts can be centrotherm, the brand such as seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD depositing antireflection film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 400 DEG C into, 390 DEG C, 380 DEG C, 370 DEG C, 360 DEG C, and keep other techniques constant, by the crystal silicon chip after plated film, through printing backplane, back surface field, after the operation sintering such as positive grid printing, preparation becomes finished product solar battery sheet, through solar battery sheet battery performance testing system halm system testing, draw the every battery performance of solar battery sheet, found by solar battery sheet shunting resistance contrast before and after process reform, adopt present invention process significantly can increase the shunting resistance of solar battery sheet.
embodiment 6
The tubular type PECVD that the present embodiment adopts can be centrotherm, the brand such as seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD to deposit passive film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 400 DEG C into, 390 DEG C, 380 DEG C, 370 DEG C, 360 DEG C, the power simultaneously adopting ionization special gas time period during tubular type PECVD plated film is 5000W, the pulse turn-off time of ionization special gas time period is 30 μ s, whole processing time does not change.Keep other processing condition constant, by the crystal silicon chip after plated film, after the operation sintering such as printing backplane, back surface field, positive grid printing, preparation becomes finished product solar battery sheet, through solar battery sheet battery performance testing system halm system testing, draw the every battery performance of solar battery sheet, found by solar battery sheet shunting resistance contrast before and after process reform, adopt present invention process significantly can increase the shunting resistance of solar battery sheet.
embodiment 7
The tubular type PECVD that the present embodiment adopts can be the brands such as centrotherm, seven-star or prompt good wound, its structural representation as shown in Figure 1, when adopting tubular type PECVD to deposit passive film, during tubular type PECVD plated film in body of heater temperature from fire door to stove tail by traditional 450 DEG C, 440 DEG C, 430 DEG C, 420 DEG C, 420 DEG C, change 400 DEG C, 390 DEG C, 380 DEG C, 370 DEG C, 360 DEG C into, the power simultaneously adopting ionization special gas time period during tubular type PECVD plated film is 5500W, and the pulse turn-off time of ionization special gas time period is 30 μ s.Except original special gas ammonia and silane, increase a kind of voltage stabilizing gas nitrogen when tubular type PECVD plated film in body of heater, the flow of nitrogen is 8 ~ 12slm.And keep other techniques constant, by the crystal silicon chip after plated film, after the operation sintering such as printing backplane, back surface field, positive grid printing, preparation becomes finished product solar battery sheet, through solar battery sheet battery performance testing system halm system testing, draw the every battery performance of solar battery sheet, found by solar battery sheet shunting resistance contrast before and after process reform, adopt present invention process significantly can increase the shunting resistance of solar battery sheet, resultant battery sheet appearance color is seen between sheet and sheet and slice, thin piece internal color does not have difference simultaneously.
Above-described embodiment is the present invention's preferably embodiment; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from spirit of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included in protection scope of the present invention.
Claims (2)
1. one kind has the film coating method of the crystal silicon solar energy battery of high shunting resistance, comprise and adopt tubular type PECVD depositing antireflection film, it is characterized in that: during tubular type PECVD plated film, in body of heater, temperature is set as from fire door successively to stove tail: 420 DEG C, 410 DEG C, 400 DEG C, 380 DEG C, 380 DEG C, the power adopting ionization special gas time period during tubular type PECVD plated film is 5500W, and the pulse turn-off time of ionization special gas time period is 30 μ s.
2. the film coating method with the crystal silicon solar energy battery of high shunting resistance according to claim 1, is characterized in that: increase a kind of voltage stabilizing gas when tubular type PECVD plated film in body of heater, and described voltage stabilizing gas is nitrogen, and the flow of described nitrogen is 8 ~ 12slm.
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| EP0464515A2 (en) * | 1990-06-28 | 1992-01-08 | Kabushiki Kaisha Toshiba | Method of manufacturing silicon nitride film |
| CN1609270A (en) * | 2004-11-16 | 2005-04-27 | 福州大学 | PECVD deposition low-tension SiN thin film technology |
| CN102856174A (en) * | 2012-09-19 | 2013-01-02 | 英利能源（中国）有限公司 | Preparation method for silicon nitride film, solar cell with silicon nitride film and preparation method for solar cell |
| CN102864436A (en) * | 2011-07-06 | 2013-01-09 | 长沙理工大学 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060062913A1 (en) * | 2004-09-17 | 2006-03-23 | Yun-Ren Wang | Process for depositing btbas-based silicon nitride films |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0464515A2 (en) * | 1990-06-28 | 1992-01-08 | Kabushiki Kaisha Toshiba | Method of manufacturing silicon nitride film |
| CN1609270A (en) * | 2004-11-16 | 2005-04-27 | 福州大学 | PECVD deposition low-tension SiN thin film technology |
| CN102864436A (en) * | 2011-07-06 | 2013-01-09 | 长沙理工大学 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
| CN102856174A (en) * | 2012-09-19 | 2013-01-02 | 英利能源（中国）有限公司 | Preparation method for silicon nitride film, solar cell with silicon nitride film and preparation method for solar cell |
| CN103117310A (en) * | 2013-02-27 | 2013-05-22 | 上海艾力克新能源有限公司 | Double-layer silicon nitride antireflection film and manufacture method thereof |
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