CN107086250B - A method of antireflective film is set using PECVD plating - Google Patents
A method of antireflective film is set using PECVD plating Download PDFInfo
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- CN107086250B CN107086250B CN201710330442.6A CN201710330442A CN107086250B CN 107086250 B CN107086250 B CN 107086250B CN 201710330442 A CN201710330442 A CN 201710330442A CN 107086250 B CN107086250 B CN 107086250B
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 62
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 44
- 238000007747 plating Methods 0.000 title claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 239000010453 quartz Substances 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000003708 ampul Substances 0.000 claims abstract description 25
- 239000012495 reaction gas Substances 0.000 claims abstract description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 54
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 27
- 229910021529 ammonia Inorganic materials 0.000 claims description 27
- 229910000077 silane Inorganic materials 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000010792 warming Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 84
- 230000000052 comparative effect Effects 0.000 description 11
- 210000004027 cell Anatomy 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of methods plated using PECVD and set antireflective film, include the following steps: that silicon wafer to be processed is put into the quartz ampoule of PECVD device by (1), it vacuumizes, heat up, be passed through reaction gas, make the atmosphere atmosphere for forming reaction gas in quartz ampoule；The power of PECVD device is adjusted to P1, indirect method plated film is carried out to silicon chip surface to be processed, deposits bottom antireflective film in silicon chip surface；The P1 is greater than 40KHZ；(2) power of PECVD device is then adjusted to P2, carries out direct method plated film, continue to deposit antireflective film on the bottom antireflective film；The P2 is less than or equal to 40KHZ；Power supply is closed, is simultaneously stopped and is passed through reaction gas, the plating that antireflective film can be completed is set.It is demonstrated experimentally that it is preferable using the film thickness uniformity of obtained antireflective film of the invention, and surface can be reduced and lack sub- recombination rate, minority carrier life time is improved, the photoelectric conversion efficiency of cell piece is improved.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, and in particular to a kind of side that antireflective film is set using PECVD plating
Method.
Background technique
Conventional fossil fuel is increasingly depleted, and in existing sustainable energy, solar energy is undoubtedly a kind of most clear
Clean, most universal and most potential alternative energy source.Device of solar generating is also known as solar battery or photovoltaic cell, can incite somebody to action
Solar energy is directly changed into electric energy, and electricity generating principle is the photovoltaic effect based on semiconductor PN.Wherein, the crystalline silicon sun
Energy battery is widely applied due to silicon reserves abundant.
The preparation process of existing crystal silicon solar energy battery is as follows: cleaning and texturing → diffusion → etch/go PSG →
PECVD plated film → silk-screen printing → sintering → test stepping → sorting → packaging.Wherein, PECVD plated film refers to using plasma
Body enhances chemical vapor deposition method (PECVD, Plasma Enhanced Chemical Vapor Deposition), makes gas
Body occurs to chemically react and forms coating, i.e. antireflective coating on silicon cell surface；The main function of this antireflective coating is: drop
Antiradar reflectivity, the passivation of good body and surface passivation, and strong compactness and resistance to most acid-base property using silicon nitride film,
Silicon chip surface forms protective layer.
However, existing tubular type PECVD board causes silicon wafer bottom just to be opened due to being the RF power supply design of fixed frequency
When the deposition that begins, silicon chip surface can be damaged heavier, cause surface to lack sub- recombination rate higher, meanwhile, by surface flannelette
It influences, surfaces nitrided silicon film thickness uniformity is unstable, finally affects the photoelectric conversion efficiency of cell piece.
In view of the above-mentioned problems, Chinese invention patent 201210133070.5 is disclosed and a kind of is improved height in the way of frequency modulation
The method of frequency discharge plasma uniformity, the frequency by the electromagnetic field of high frequency of institute's feed-in is by Tuning Control
, and its frequency continuously circulation change always in plasma discharge processes, and in a fixed frequency model
In enclosing, make the position that plasma density is relatively high in discharge plasma space that circulation change occur；Moreover, the frequency is followed
The mode of ring variation is the constant cycle.
However, inventor has found by Industrialized Production Practice, although the above method can improve the equal of discharge plasma
Even property, but the film thickness uniformity of its finally obtained antireflective film or unstable.
Therefore, a kind of method plated using PECVD and set antireflective film is developed, to improve the film thickness uniformity of antireflective film, and can
Lack sub- recombination rate to reduce surface, improve minority carrier life time, improve the photoelectric conversion efficiency of cell piece, it is clear that there is positive show
Sincere justice.
Summary of the invention
The object of the present invention is to provide a kind of methods plated using PECVD and set antireflective film.
To achieve the above object of the invention, the technical solution adopted by the present invention is that: it is a kind of that the side of antireflective film is set using PECVD plating
Method includes the following steps:
(1) silicon wafer to be processed is put into the quartz ampoule of PECVD device, vacuumizes, heats up, be passed through reaction gas, makes
The atmosphere atmosphere of reaction gas is formed in quartz ampoule；
Then the power of PECVD device is adjusted to P1, indirect method plated film is carried out to silicon chip surface to be processed,
Silicon chip surface deposits bottom antireflective film；
The P1 is greater than 40KHZ；
(2) power of PECVD device is then adjusted to P2, direct method plated film is carried out, in the bottom antireflective film
On continue deposit antireflective film；
The P2 is less than or equal to 40KHZ；
Power supply is closed, is simultaneously stopped and is passed through reaction gas, the plating that antireflective film can be completed is set.
And RF power is determined by the power of PECVD device, therefore, as long as adjustment power, can be realized
Switching between indirect method plated film and direct method plated film.
Working mechanism of the invention is as follows: first using indirect method plated film, (nitrogenizes in silicon chip surface deposition bottom antireflective film
Silicon thin film), plasma is weaker to the bombardment effect of silicon chip surface when due to indirect method plated film, and the deposition of plasma is by silicon
The flannelette uniformity influence on piece surface is smaller, thus can reduce the damaging layer of silicon chip surface, and it is compound to reduce the few son in surface；
Then, using direct method plated film, continue to deposit antireflective film on bottom antireflective film, when direct method plated film, plasma
Body is stronger to the bombardment effect of silicon chip surface, but due to protecting in the bottom antireflective film that bottom deposited one layer
Shield, so the bombardment of plasma will not lose silicon wafer, and strong bombardment effect is conducive to H ion and enters inside silicon wafer, increases
Add H passivation, promotes the photoelectric conversion efficiency of cell piece；Meanwhile when direct method plated film, plasma is by silicon chip surface suede
The uniformity in face is affected, but since silicon wafer low layer has been previously deposited with bottom antireflective film, so utilizing direct method at this time
The uniformity of deposition antireflective film (silicon nitride) is no longer influenced by flannelette substantially, to greatly improve the uniform film thickness of antireflective film
Property.
In the step (1), the duration of indirect method plated film is also possible to 110 seconds, 120 seconds, 130 seconds, 140 seconds, 150
Second, 160 seconds, 170 seconds, 180 seconds, 190 seconds, 200 seconds, 210 seconds, 230 seconds, 250 seconds, 260 seconds, 270 seconds, 290 seconds, 300 seconds,
310 seconds, 320 seconds, 330 seconds, 340 seconds, 350 seconds, 360 seconds, 370 seconds, 380 seconds, 390 seconds etc..
In the step (2), the time of direct method plated film can also be 510 seconds, 520 seconds, 530 seconds, 550 seconds, 570 seconds,
590 seconds, 610 seconds, 650 seconds, 680 seconds, 700 seconds, 710 seconds, 720 seconds, 730 seconds, 750 seconds, 760 seconds, 770 seconds, 780 seconds, 790 seconds
Deng.
Preferably, in the step (1), P1 is 50 ~ 500KHZ, and indirect method plated film continues 100 ~ 400 seconds；
Preferably, in the step (2), P2 is 30 ~ 40KHZ, and direct method plated film continues 500 ~ 800 seconds；
In the step (1), the power of PECVD device can for 41KHZ, 42KHZ, 43KHZ, 44KHZ, 45KHZ,
46KHZ、47KHZ、48KHZ、49KHZ、51KHZ、52KHZ、53KHZ、54KHZ、55KHZ、56KHZ、57KHZ、58KHZ、
59KHZ、60KHZ、61KHZ、62KHZ、63KHZ、64KHZ、65KHZ、66KHZ、67KHZ、68KHZ、69KHZ、70KHZ、
75KHZ、80KHZ、85KHZ、90KHZ、95KHZ、100KHZ、105KHZ、110KHZ、115KHZ、120KHZ、125KHZ、
130KHZ、135KHZ、140KHZ、145KHZ、150KHZ、160KHZ、170KHZ、180KHZ、190KHZ、200KHZ、250KHZ、
300KHZ, 350KHZ, 400KHZ, 450KHZ, 460KHZ, 470KHZ, 480KHZ, 490KHZ, 495KHZ etc..
Preferably, in the step (1), the power of PECVD device is adjusted to 50 ~ 130KHZ.It is further preferred that
The power of PECVD device is adjusted to 100 ~ 120KHZ.
In the step (2), the power of PECVD device can be 31KHZ, 32KHZ, 33KHZ, 34KHZ, 35KHZ,
36KHZ, 37KHZ, 38KHZ, 39KHZ etc..Preferably, in the step (2), the power of PECVD device is adjusted to 35 ~
39KHZ。
Preferably, in the step (1) bottom antireflective film with a thickness of 10 ~ 20nm, the step (2) is finally obtained to be subtracted
Anti- film with a thickness of 80 ~ 100nm.
In the step (1) thickness of bottom antireflective film can be 11nm, 12nm, 13nm, 14nm, 15nm, 16nm,
17nm, 18nm, 19nm, 19.5nm etc..
The thickness of the finally obtained antireflective film of the step (2) can be 81nm, 82nm, 83nm, 84nm, 85nm, 86nm,
87nm, 88nm, 89nm, 90nm, 91nm, 92nm, 93nm, 94nm, 95nm, 96nm, 97nm, 98nm, 99nm etc..
Preferably, in the step (1) bottom antireflective film with a thickness of 14 ~ 16nm.
Preferably, the reaction gas is ammonia and silane.
Preferably, the flow of the ammonia is 1 ~ 20 cubic meters per second, and the flow of the silane is 1 ~ 20 cubic meters per second.
For example, the flow of the ammonia is 2 cubic meters per seconds, 3 cubic meters per seconds, 5 cubic meters per seconds, 7 cubic meters per seconds, 9 cubic metres
Per second, 10 cubic meters per seconds, 11 cubic meters per seconds, 12 cubic meters per seconds, 15 cubic meters per seconds, 16 cubic meters per seconds, 18 cubes
Metre per second (m/s), 19 cubic meters per seconds etc..
The flow of the silane is 2 cubic meters per seconds, 3 cubic meters per seconds, 5 cubic meters per seconds, 7 cubic meters per seconds, 9 cubes
Metre per second (m/s), 10 cubic meters per seconds, 11 cubic meters per seconds, 12 cubic meters per seconds, 15 cubic meters per seconds, 16 cubic meters per seconds, 18 are stood
Square metre per second (m/s), 19 cubic meters per seconds etc..
Preferably, in the step (1), the air pressure in quartz ampoule is 1600 ~ 2000mTorr；
In the step (2), the air pressure in quartz ampoule is 1000 ~ 1600mTorr.
For example, in the step (1), the air pressure in quartz ampoule is 1650mTorr, 1700mTorr, 1750mTorr,
1800mTorr, 1850mTorr, 1900mTorr, 1950mTorr, 1980mTorr, 1990mTorr etc..
In the step (2), air pressure in quartz ampoule is 1050mTorr, 1100mTorr, 1150mTorr,
1200mTorr、1250mTorr、1300mTorr、1350mTorr、1400mTorr、1450mTorr、1500mTorr、
1550mTorr, 1560mTorr, 1580mTorr etc..
Preferably, in the step (2), continue deposition on the bottom antireflective film of silicon chip surface using direct method plated film and subtract
Anti- film continues 500 ~ 600 seconds.Preferably, in the step (1), after being warming up to 480 DEG C, it is passed through reaction gas.
Preferably, in the step (1), indirect method plated film is carried out to silicon chip surface to be processed, continues 150 ~ 300 seconds.
Due to the above technical solutions, the present invention has the following advantages over the prior art:
1. the present invention has developed a kind of new method for setting antireflective film using PECVD plating, indirect method plated film is first used,
Silicon chip surface deposits bottom antireflective film (i.e. silicon nitride film), then continues to deposit on bottom antireflective film using direct method plated film
Antireflective film, it is demonstrated experimentally that it is preferable using the film thickness uniformity of obtained antireflective film of the invention, and it is compound to reduce the few son in surface
Rate improves minority carrier life time, improves the photoelectric conversion efficiency of cell piece, achieve significant effect；
2. the advantages of present invention can make direct method and indirect method plated film be used cooperatively, combine two kinds of plated film modes, most
Achieve the purpose that reduce surface damage eventually, has reduced surface recombination, promotes passivation；
3. method operation of the invention and control are simple, i.e. implementable on existing tubular type PECVD board, thus are suitable for
It promotes and applies.
Detailed description of the invention
Plasma traffic direction structural schematic diagram (plasma when Fig. 1 is direct method plated film in the embodiment of the present invention one
There is bombardment to silicon chip surface).
Plasma traffic direction structural schematic diagram (plasma when Fig. 2 is indirect method plated film in the embodiment of the present invention one
To silicon chip surface without bombardment).
Wherein: 1, graphite boat piece；2, silicon wafer；5, plasma direction (plasma directly bombards silicon chip surface)；6, etc.
Gas ions direction (plasma does not bombard silicon chip surface directly).
Specific embodiment
The invention will be further described with reference to the accompanying drawings and embodiments:
Embodiment one:
Referring to shown in Fig. 1 ~ 2, a method of antireflective film is set using PECVD plating, is included the following steps:
After in graphite boat pusher platform quartz ampoule, start to vacuumize and heat up, after temperature reaches 480 DEG C, in quartz ampoule first
It is passed through the ammonia and silane of 10s, makes the atmosphere for forming ammonia and silane in quartz ampoule, after 10s, frequency conversion RF power supply power adjustment is arrived
130KHZ is at this time indirect method plated film, and plasma is weaker to the bombardment effect of silicon chip surface, reduces the damage of silicon chip surface
It is compound to reduce the few son in surface, while continuing to be passed through ammonia and silane for layer, ionizes ammonia and silane in silicon chip surface and deposits bottom
Silicon nitride film, continue 150s after；Air pressure in quartz ampoule is 1700mTorr；
Frequency conversion RF power supply power adjustment continues to be passed through ammonia and silane to 40KHZ, is at this time direct method plated film, plasma
Body is stronger to the bombardment effect of silicon chip surface, but the silicon nitride layer due to deposited one layer of 15nm or so in bottom
It protects, so the bombardment of plasma will not lose silicon wafer, strong bombardment effect is conducive to H ion and enters inside silicon wafer,
H passivation is increased, after continuing 600s, the air pressure in quartz ampoule is 1200mTorr；
RF power supply is closed, is simultaneously stopped and is passed through ammonia and silane, the plating that antireflective film can be completed is set.Finally obtained anti-reflection
Film with a thickness of 83nm.
(plasma has silicon chip surface to be banged plasma traffic direction structural schematic diagram when Fig. 1 is direct method plated film
It hits).Plasma traffic direction structural schematic diagram when Fig. 2 is indirect method plated film (plasma is to silicon chip surface without bombardment).
Comparative example one:
A method of antireflective film is set using PECVD plating, is included the following steps:
After in graphite boat pusher platform quartz ampoule, start to vacuumize and heat up, after temperature reaches 480 degree, in quartz ampoule first
It is passed through the ammonia and silane of 10s, makes the atmosphere for forming ammonia and silane in quartz ampoule, after 10s, power is adjusted to
135.6KHZ, while continuing to be passed through ammonia and silane, ammonia and silane are ionized in silicon chip surface cvd nitride silicon thin film, are continued
After 600 ~ 800s；RF power supply is closed, is simultaneously stopped and is passed through ammonia and silane, the plating that antireflective film can be completed is set.It is finally obtained
Antireflective film with a thickness of 84nm.
Comparative example two:
A method of antireflective film is set using PECVD plating, is included the following steps:
After in graphite boat pusher platform quartz ampoule, start to vacuumize and heat up, after temperature reaches 480 degree, in quartz ampoule first
It is passed through the ammonia and silane of 10s, makes the atmosphere for forming ammonia and silane in quartz ampoule, after 10s, power is adjusted to 40KHZ,
Continue to be passed through ammonia and silane simultaneously, ionizes ammonia and silane in silicon chip surface cvd nitride silicon thin film, after continuing 600 ~ 800s；
RF power supply is closed, is simultaneously stopped and is passed through ammonia and silane, the plating that antireflective film can be completed is set.The thickness of finally obtained antireflective film
For 84nm.
The cell piece that embodiment one and comparative example one and two are obtained carries out electric performance test, as a result as follows:
| Item | Minority carrier life time (us) | Uoc (mV) | Isc (A) | FF (%) | Rs (mΩ) | Rsh (Ω) | EFF |
| Embodiment one | 85 | 640.9 | 9.00 | 1.69 | 838 | 80.17 | 19.00% |
| Comparative example one | 63 | 638.9 | 8.97 | 1.63 | 675 | 80.08 | 18.85% |
| Comparative example two | 67 | 638.4 | 8.95 | 1.56 | 587 | 80.24 | 18.83% |
By above-mentioned comparison it is found that the present invention, which can reduce surface, lacks sub- recombination rate, minority carrier life time is improved, and mention significantly
The photoelectric conversion efficiency of high cell piece: relative to comparative example, the improved efficiency of the present embodiment 0.15%.
Embodiment two:
A method of antireflective film is set using PECVD plating, is included the following steps:
After in graphite boat pusher platform quartz ampoule, start to vacuumize and heat up, after temperature reaches 480 degree, in quartz ampoule first
It is passed through the ammonia and silane of 10s, makes the atmosphere for forming ammonia and silane in quartz ampoule, after 10s, frequency conversion RF power supply power adjustment is arrived
100KHZ is at this time indirect method plated film, and the deposition of plasma is influenced smaller by the flannelette uniformity of silicon chip surface, is continued simultaneously
It is passed through ammonia and silane, ionizes ammonia and silane in the silicon nitride film of silicon chip surface deposition bottom, after continuing 300s；Frequency conversion RF
Power is adjusted to 40KHZ, continues to be passed through ammonia and silane, is at this time direct method plated film, when direct method plated film, plasma
It is affected by the uniformity of silicon chip surface flannelette, but since the silicon nitride that silicon wafer low layer has been previously deposited with 30nm or so is done
Bottom, so no longer being influenced substantially by flannelette using the uniformity of direct method deposited silicon nitride at this time, while direct method is advantageous
It is entered inside silicon wafer in H ion, increases H passivation, after continuing 500s；RF power supply is closed, is simultaneously stopped and is passed through ammonia
And silane, the plating that antireflective film can be completed are set.
Comparative example three
Improve high-frequency discharge plasma in the way of frequency modulation according to disclosed in Chinese invention patent 201210133070.5
The method of body uniformity prepares antireflective film, design parameter referring to embodiment one content.
The film thickness uniformity for the cell piece that testing example two and comparative example one to three obtain is as a result as follows:
| Item | Piece 1 | Piece 2 | Piece 3 | Piece 4 | Piece 5 |
| Embodiment two | 82.6 | 83.4 | 82.5 | 82.7 | 82.6 |
| Comparative example one | 81.6 | 84.5 | 86.5 | 82.5 | 84.2 |
| Comparative example two | 80.5 | 85.6 | 87.2 | 80.5 | 83.6 |
| Comparative example three | 82.6 | 87.9 | 83.1 | 87.2 | 83.2 |
By above-mentioned comparison it is found that the present invention can substantially improve the film thickness uniformity of antireflective film.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (9)
1. a kind of plate the method for setting antireflective film using PECVD, which comprises the steps of:
(1) silicon wafer to be processed is put into the quartz ampoule of PECVD device, vacuumizes, heats up, be passed through reaction gas, makes quartz
The atmosphere atmosphere of reaction gas is formed in pipe；
Then the power of PECVD device is adjusted to P1, indirect method plated film is carried out to silicon chip surface to be processed, in silicon wafer
Surface deposits bottom antireflective film；
The P1 is greater than 40KHZ；
(2) power of PECVD device is then adjusted to P2, carries out direct method plated film, on the bottom antireflective film after
Continuous deposition antireflective film；
The P2 is less than or equal to 40KHZ；
Power supply is closed, is simultaneously stopped and is passed through reaction gas, the plating that antireflective film can be completed is set；
In the step (1), P1 is 50 ~ 500KHZ, and indirect method plated film continues 100 ~ 400 seconds；
In the step (2), P2 is 30 ~ 40KHZ, and direct method plated film continues 500 ~ 800 seconds.
2. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: step (1) indsole
Layer antireflective film with a thickness of 10 ~ 20nm, the finally obtained antireflective film of the step (2) with a thickness of 80 ~ 100nm.
3. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: the reaction gas is
Ammonia and silane.
4. according to claim 3 plate the method for setting antireflective film using PECVD, it is characterised in that: the flow of the ammonia
For 1 ~ 20 cubic meters per second, the flow of the silane is 1 ~ 20 cubic meters per second.
5. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: in the step (1),
The power of PECVD device is adjusted to 50 ~ 130KHZ.
6. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: in the step (2),
The power of PECVD device is adjusted to 35 ~ 39KHZ.
7. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: in the step (1),
Air pressure in quartz ampoule is 1600 ~ 2000mTorr；
In the step (2), the air pressure in quartz ampoule is 1000 ~ 1600mTorr.
8. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: in the step (1),
After being warming up to 480 DEG C, it is passed through reaction gas.
9. according to claim 1 plate the method for setting antireflective film using PECVD, it is characterised in that: in the step (1),
Indirect method plated film is carried out to silicon chip surface to be processed, continues 150 ~ 300 seconds.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101931022A (en) * | 2009-06-25 | 2010-12-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of crystalline silicon solar battery |
| CN102569497A (en) * | 2010-12-30 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for forming anti-reflecting film on base plate as well as solar cell and preparation method thereof |
| CN102864436A (en) * | 2011-07-06 | 2013-01-09 | 长沙理工大学 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
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| US7709859B2 (en) * | 2004-11-23 | 2010-05-04 | Cree, Inc. | Cap layers including aluminum nitride for nitride-based transistors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101931022A (en) * | 2009-06-25 | 2010-12-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of crystalline silicon solar battery |
| CN102569497A (en) * | 2010-12-30 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for forming anti-reflecting film on base plate as well as solar cell and preparation method thereof |
| CN102864436A (en) * | 2011-07-06 | 2013-01-09 | 长沙理工大学 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
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