WO2014201975A1 - Crystalline silicon oxidation processing device for solar cell sheet passivation - Google Patents
Crystalline silicon oxidation processing device for solar cell sheet passivation Download PDFInfo
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- WO2014201975A1 WO2014201975A1 PCT/CN2014/079837 CN2014079837W WO2014201975A1 WO 2014201975 A1 WO2014201975 A1 WO 2014201975A1 CN 2014079837 W CN2014079837 W CN 2014079837W WO 2014201975 A1 WO2014201975 A1 WO 2014201975A1
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- WIPO (PCT)
- Prior art keywords
- crystalline silicon
- passivation
- silicon oxidation
- chamber
- light source
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- 230000003647 oxidation Effects 0.000 title claims abstract description 40
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 40
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 238000002161 passivation Methods 0.000 title claims abstract description 25
- 238000005286 illumination Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a crystalline silicon oxidation processing apparatus for passivation of solar cells. Background technique
- the lattice distortion of the silicon oxide/silicon interface is small, and silicon oxide can passivate the silicon surface well. Therefore, the growth of a silicon oxide film between silicon and silicon nitride film can effectively solve the lattice distortion. Problem, thereby improving the passivation effect.
- the devices for growing silicon oxide thin films on the surface of crystalline silicon wafers mainly include high-temperature oxidation equipment and wet chemical oxidation equipment, but the former requires an extra high temperature process, consumes a large amount of energy, and reduces the life of the silicon wafer, while the latter increases the process.
- the complexity, while the silicon oxide film is not dense enough, can not meet the requirements of the process. Summary of the invention
- An object of the present invention is to provide a crystalline silicon oxidation processing apparatus for passivation of a solar cell sheet which is capable of forming a silicon oxide layer on a surface of a crystalline silicon under low temperature conditions to enhance surface passivation of a crystalline silicon solar cell.
- the technical solution of the present invention is to design a crystalline silicon oxidation processing apparatus for passivation of a solar cell, comprising an oxidation chamber provided with an air intake device and an illumination device, and the illumination device can emit 100 Light in the -5000 nm wavelength range.
- the air intake device is used to input oxidizing gas such as oxygen, ozone, air, water into the oxidation chamber.
- oxidizing gas such as oxygen, ozone, air, water
- a silicon oxide layer can be formed on the surface of the crystalline silicon under low temperature conditions, for example, the oxidation treatment temperature can be 0-450 ° C:.
- the illumination device further comprises a light source, a light intensity control module, a illumination time control module and an illumination wavelength control module.
- the light source is an infrared light source and/or a visible light source.
- the light source is a continuous wavelength light source capable of emitting light having a continuously distributed wavelength.
- the oxidation chamber is further provided with a heating device for heating the oxidation chamber to control the temperature in the oxidation chamber.
- the oxidation chamber is further provided with an air outlet device.
- the apparatus further comprises a loading station, a heating chamber, a cooling chamber and a loading station for completing the production line with the oxidation chamber.
- the heating device is a resistance heater and/or a light heater.
- the electric resistance heater is connected to the power control module, and the illumination heater is connected to the irradiation intensity control module.
- the oxidizing chamber and/or the heating chamber are provided with temperature measuring devices for real-time monitoring of the temperature of the silicon wafer.
- An advantage and an advantageous effect of the present invention is to provide a crystalline silicon oxidation processing apparatus for solar cell passivation which can form a silicon oxide layer on a surface of a crystalline silicon under low temperature conditions and enhance surface passivation of a crystalline silicon solar cell.
- the device is low in cost, simple in structure, stable in stability, and compatible with current semiconductor processes and solar cell processes.
- Figure 1 is a schematic view of the present invention. detailed description
- the apparatus of the present invention can be used in a manufacturing process of a solar cell, and a thin silicon oxide is formed on the surface of the silicon wafer by the device before the silicon nitride coating is applied to the crystalline silicon wafer, and then the conventional silicon nitride coating is performed. Thereby, the passivation effect of the surface of the silicon wafer can be enhanced, and the photoelectric conversion efficiency of the solar cell can be improved.
- the core of the invention resides in an oxidizing chamber provided with an air intake means and an illumination means, and the light illuminating means can emit light in the wavelength range of 100-5000 nm.
- the air inlet device is used for inputting one or more kinds of oxidizing gases, such as oxygen, ozone, air, water vapor and laughing gas, into the oxidation chamber; the illumination device illuminates the crystalline silicon placed in the oxidizing gas to make the crystalline silicon surface A silicon oxide layer is formed; in particular, when light is used in the wavelength range of 100-5000 nm, a silicon oxide layer can be formed on the surface of the crystalline silicon at a low temperature, for example, the oxidation treatment temperature can be 0-450 ° C:.
- oxidizing gases such as oxygen, ozone, air, water vapor and laughing gas
- a crystalline silicon oxidation processing apparatus for passivation of a solar cell includes a loading stage 1, a heating chamber 2, an oxidation chamber 3, a cooling chamber 4, and a loading table 5, which are sequentially disposed, and a silicon wafer. It is transmitted by the roller 10.
- the heating chamber 2 is provided with a heating device 6 adjustable in distance from the silicon wafer, and the heating device 6 can be heated by an infrared lamp tube; the heating chamber 2 is further provided with an air outlet device and a temperature measuring device capable of monitoring the temperature of the silicon wafer in real time. .
- the oxidizing chamber 3 is provided with an air inlet means 7 with a gas flow meter and a flow divider, and an illumination means 8 which is adjustable in distance from the silicon wafer, and which illuminates the light in the wavelength range of 100-5000 nm.
- the illumination device 8 further includes a light source, a light intensity control module, an illumination time control module, and an illumination wavelength control module.
- the above light source may be one or more of an ultraviolet light source, an infrared light source, and a visible light source.
- the above light source may be a continuous wavelength source for emitting light of a continuously distributed wavelength.
- the oxidation chamber 3 is further provided with an adjustable position heating device, and the heating device can heat the oxidation chamber to control the temperature in the oxidation chamber, such as controlling the temperature in the oxidation chamber 3 to 0-450 °C:.
- the heating device is a resistance heater and/or a light heater, and the resistor is added
- the heat exchanger is connected with a power control module, and the illumination heater is connected with an irradiation intensity control module.
- the oxidizing chamber 3 is further provided with an air outlet means and a temperature measuring means for monitoring the temperature of the silicon wafer in real time.
- the above-described cooling chamber 4 is provided with an air intake means 9 having a gas flow meter and a flow divider for introducing the desired gas into the cooling chamber 4 and filling the entire cavity of the cooling chamber 4, thereby cooling the silicon wafer.
- an air intake means 9 having a gas flow meter and a flow divider for introducing the desired gas into the cooling chamber 4 and filling the entire cavity of the cooling chamber 4, thereby cooling the silicon wafer.
Abstract
A crystalline silicon oxidation processing device for solar cell sheet passivation, comprising an oxidation chamber, provided with an air intake device and an illumination device, the illumination device being capable of emitting light with a wavelength within the range of 100 to 5000 nm. The present device generates a silicon oxide layer on the surface of crystalline silicon under low temperature conditions, enhancing surface passivation of crystalline silicon solar cells. The present device is low-cost, simple in structure, stable, and compatible with existing semiconductor and solar cell technology.
Description
用于太阳能电池片钝化的晶体硅氧化处理设备 技术领域 Crystalline silicon oxidation processing equipment for solar cell passivation
本发明涉及用于太阳能电池片钝化的晶体硅氧化处理设备。 背景技术 The present invention relates to a crystalline silicon oxidation processing apparatus for passivation of solar cells. Background technique
在半导体、 太阳能等行业中， 由于工艺的要求， 经常需要在硅片 表面生长一层薄氧化硅层。 例如， 在太阳能电池的制作工艺中， 良好 的表面钝化是太阳能电池获得高转换效率的关键所在， 目前传统晶体 硅太阳能电池主要是用等离子增强化学气相在硅片表面沉积氮化硅 薄膜来进行钝化的，但是氮化硅的晶格常数与硅的晶格常数有较大的 差异， 导致在氮化硅 /硅界面处产生较大的晶格畸变， 从而影响钝化 效果。 而氧化硅 /硅界面的晶格畸变很小， 同时氧化硅可以很好的对 硅表面进行钝化，因而在硅与氮化硅薄膜之间生长一层氧化硅薄膜可 以有效的解决晶格畸变问题， 从而提升钝化效果。 In the semiconductor, solar, and other industries, it is often necessary to grow a thin layer of silicon oxide on the surface of the silicon wafer due to process requirements. For example, in the fabrication process of solar cells, good surface passivation is the key to achieving high conversion efficiency of solar cells. At present, conventional crystalline silicon solar cells are mainly deposited by plasma-enhanced chemical vapor deposition on the surface of silicon wafers. Passivated, but the lattice constant of silicon nitride is quite different from the lattice constant of silicon, resulting in a large lattice distortion at the silicon nitride/silicon interface, which affects the passivation effect. The lattice distortion of the silicon oxide/silicon interface is small, and silicon oxide can passivate the silicon surface well. Therefore, the growth of a silicon oxide film between silicon and silicon nitride film can effectively solve the lattice distortion. Problem, thereby improving the passivation effect.
目前，在晶体硅片表面生长氧化硅薄膜的设备主要有高温氧化设 备和湿化学氧化设备， 但是前者需要额外的高温过程， 耗费大量的能 源， 使硅片体寿命降低， 而后者会增加工艺的复杂性， 同时氧化硅薄 膜不够致密， 都不能满足工艺的要求。 发明内容 At present, the devices for growing silicon oxide thin films on the surface of crystalline silicon wafers mainly include high-temperature oxidation equipment and wet chemical oxidation equipment, but the former requires an extra high temperature process, consumes a large amount of energy, and reduces the life of the silicon wafer, while the latter increases the process. The complexity, while the silicon oxide film is not dense enough, can not meet the requirements of the process. Summary of the invention
本发明的目的在于提供一种用于太阳能电池片钝化的晶体硅氧 化处理设备， 其能在低温条件下在晶体硅表面生成氧化硅层， 增强晶 体硅太阳能电池表面钝化。 SUMMARY OF THE INVENTION An object of the present invention is to provide a crystalline silicon oxidation processing apparatus for passivation of a solar cell sheet which is capable of forming a silicon oxide layer on a surface of a crystalline silicon under low temperature conditions to enhance surface passivation of a crystalline silicon solar cell.
为实现上述目的，本发明的技术方案是设计一种用于太阳能电池 片钝化的晶体硅氧化处理设备， 包括氧化腔， 该氧化腔设有进气装置 和光照装置， 该光照装置可以发出 100-5000nm波长范围内的光。 In order to achieve the above object, the technical solution of the present invention is to design a crystalline silicon oxidation processing apparatus for passivation of a solar cell, comprising an oxidation chamber provided with an air intake device and an illumination device, and the illumination device can emit 100 Light in the -5000 nm wavelength range.
进气装置用于向氧化腔输入氧化气体， 如氧气、 臭氧、 空气、 水
蒸气和笑气中的一种或几种；光照装置对置于氧化气体中的晶体硅进 行光照， 使晶体硅表面生成氧化硅层； 特别是当光照采用 100-5000nm 波长范围内的光时， 能在低温条件下在晶体硅表面生成氧化硅层， 如 氧化处理温度可以为 0-450 °C：。 The air intake device is used to input oxidizing gas such as oxygen, ozone, air, water into the oxidation chamber. One or more of vapor and nitrous oxide; the illumination device illuminates the crystalline silicon placed in the oxidizing gas to form a silicon oxide layer on the surface of the crystalline silicon; especially when the light is in the range of 100-5000 nm; A silicon oxide layer can be formed on the surface of the crystalline silicon under low temperature conditions, for example, the oxidation treatment temperature can be 0-450 ° C:.
优选的， 上述光照装置进一步包括光源、 光照强度控制模块、 光 照时间控制模块和光照波长控制模块。 Preferably, the illumination device further comprises a light source, a light intensity control module, a illumination time control module and an illumination wavelength control module.
优选的， 上述光源为红外光光源和 /或可见光光源。 Preferably, the light source is an infrared light source and/or a visible light source.
优选的， 上述光源为连续波长光源， 能发出波长连续分布的光。 优选的， 上述氧化腔内还设有加热装置， 能对氧化腔进行加热， 控制氧化腔内的温度。 Preferably, the light source is a continuous wavelength light source capable of emitting light having a continuously distributed wavelength. Preferably, the oxidation chamber is further provided with a heating device for heating the oxidation chamber to control the temperature in the oxidation chamber.
优选的， 上述氧化腔还设有出气装置。 Preferably, the oxidation chamber is further provided with an air outlet device.
优选的， 本设备还包括上料台、 加热仓、 冷却仓和下料台， 用于 配合氧化腔完成流水线生产。 Preferably, the apparatus further comprises a loading station, a heating chamber, a cooling chamber and a loading station for completing the production line with the oxidation chamber.
优选的， 上述加热装置为电阻加热器和 /或光照加热器。 Preferably, the heating device is a resistance heater and/or a light heater.
优选的， 上述电阻加热器连接有功率控制模块， 上述光照加热器 连接有辐照强度控制模块。 Preferably, the electric resistance heater is connected to the power control module, and the illumination heater is connected to the irradiation intensity control module.
优选的， 上述氧化腔和 /或加热仓设有可实时监控硅片温度的测 温装置。 Preferably, the oxidizing chamber and/or the heating chamber are provided with temperature measuring devices for real-time monitoring of the temperature of the silicon wafer.
本发明的优点和有益效果在于：提供一种用于太阳能电池片钝化 的晶体硅氧化处理设备，其能在低温条件下在晶体硅表面生成氧化硅 层， 增强晶体硅太阳能电池表面钝化。 本设备成本低廉， 结构简单， 稳定性好， 且与现行的半导体工艺和太阳能电池工艺兼容。 附图说明 SUMMARY OF THE INVENTION An advantage and an advantageous effect of the present invention is to provide a crystalline silicon oxidation processing apparatus for solar cell passivation which can form a silicon oxide layer on a surface of a crystalline silicon under low temperature conditions and enhance surface passivation of a crystalline silicon solar cell. The device is low in cost, simple in structure, stable in stability, and compatible with current semiconductor processes and solar cell processes. DRAWINGS
图 1是本发明的示意图。 具体实施方式 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view of the present invention. detailed description
下面结合附图和实施例， 对本发明的具体实施方式作进一步描 述。 以下实施例仅用于更加清楚地说明本发明的技术方案， 而不能以
此来限制本发明的保护范围。 The specific embodiments of the present invention are further described below in conjunction with the accompanying drawings and embodiments. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and cannot This limits the scope of protection of the present invention.
本发明的设备可以用于太阳能电池的制作工艺中，在对晶体硅片 进行氮化硅镀膜前， 利用本设备在硅片表面形成一层薄氧化硅， 然后 再进行常规的氮化硅镀膜， 从而可以增强硅片表面的钝化效果， 提高 太阳能电池的光电转换效率。 The apparatus of the present invention can be used in a manufacturing process of a solar cell, and a thin silicon oxide is formed on the surface of the silicon wafer by the device before the silicon nitride coating is applied to the crystalline silicon wafer, and then the conventional silicon nitride coating is performed. Thereby, the passivation effect of the surface of the silicon wafer can be enhanced, and the photoelectric conversion efficiency of the solar cell can be improved.
本发明的核心在于设有进气装置和光照装置的氧化腔， 以及该光 照装置可以发出 100-5000nm波长范围内的光。 The core of the invention resides in an oxidizing chamber provided with an air intake means and an illumination means, and the light illuminating means can emit light in the wavelength range of 100-5000 nm.
进气装置用于向氧化腔输入氧化气体， 如氧气、 臭氧、 空气、 水 蒸气和笑气中的一种或几种；光照装置对置于氧化气体中的晶体硅进 行光照， 使晶体硅表面生成氧化硅层； 特别是当光照采用 100-5000nm 波长范围内的光时， 能在低温条件下在晶体硅表面生成氧化硅层， 如 氧化处理温度可以为 0-450 °C：。 The air inlet device is used for inputting one or more kinds of oxidizing gases, such as oxygen, ozone, air, water vapor and laughing gas, into the oxidation chamber; the illumination device illuminates the crystalline silicon placed in the oxidizing gas to make the crystalline silicon surface A silicon oxide layer is formed; in particular, when light is used in the wavelength range of 100-5000 nm, a silicon oxide layer can be formed on the surface of the crystalline silicon at a low temperature, for example, the oxidation treatment temperature can be 0-450 ° C:.
本发明的具体实施例如下： Specific embodiments of the present invention are as follows:
如图 1所示，一种用于太阳能电池片钝化的晶体硅氧化处理设备, 包括依次设置的上料台 1、 加热仓 2、 氧化腔 3、 冷却仓 4和下料台 5 , 硅片通过滚轮 10传送。 As shown in FIG. 1, a crystalline silicon oxidation processing apparatus for passivation of a solar cell includes a loading stage 1, a heating chamber 2, an oxidation chamber 3, a cooling chamber 4, and a loading table 5, which are sequentially disposed, and a silicon wafer. It is transmitted by the roller 10.
上述加热仓 2内设有与硅片之间的距离可调节的加热装置 6 ,加热 装置 6可采用红外灯管加热；加热仓 2还设有出气装置和可实时监控硅 片温度的测温装置。 The heating chamber 2 is provided with a heating device 6 adjustable in distance from the silicon wafer, and the heating device 6 can be heated by an infrared lamp tube; the heating chamber 2 is further provided with an air outlet device and a temperature measuring device capable of monitoring the temperature of the silicon wafer in real time. .
上述氧化腔 3设有带气体流量计和匀流器的进气装置 7 , 以及与硅 片之间的距离可调节的光照装置 8 ,该光照装置 8可以发出 100-5000nm 波长范围内的光。 上述光照装置 8进一步包括光源、 光照强度控制模 块、 光照时间控制模块和光照波长控制模块。 上述光源可采用紫外灯 光源、 红外光光源和可见光光源中的一种或几种。 上述光源可采用连 续波长光源， 用来发出波长连续分布的光。 The oxidizing chamber 3 is provided with an air inlet means 7 with a gas flow meter and a flow divider, and an illumination means 8 which is adjustable in distance from the silicon wafer, and which illuminates the light in the wavelength range of 100-5000 nm. The illumination device 8 further includes a light source, a light intensity control module, an illumination time control module, and an illumination wavelength control module. The above light source may be one or more of an ultraviolet light source, an infrared light source, and a visible light source. The above light source may be a continuous wavelength source for emitting light of a continuously distributed wavelength.
上述氧化腔 3内还设有可调节位置的加热装置， 加热装置能对氧 化腔进行加热， 控制氧化腔内的温度， 如把氧化腔 3内温度控制在 0-450 °C：。 上述加热装置为电阻加热器和 /或光照加热器， 所述电阻加
热器连接有功率控制模块， 所述光照加热器连接有辐照强度控制模 块。 The oxidation chamber 3 is further provided with an adjustable position heating device, and the heating device can heat the oxidation chamber to control the temperature in the oxidation chamber, such as controlling the temperature in the oxidation chamber 3 to 0-450 °C:. The heating device is a resistance heater and/or a light heater, and the resistor is added The heat exchanger is connected with a power control module, and the illumination heater is connected with an irradiation intensity control module.
上述氧化腔 3还设有出气装置和可实时监控硅片温度的测温装 置。 The oxidizing chamber 3 is further provided with an air outlet means and a temperature measuring means for monitoring the temperature of the silicon wafer in real time.
上述冷却仓 4设有带气体流量计和匀流器的进气装置 9 ,用于将所 需气体导入冷却仓 4并充满冷却仓 4的整个腔体， 由此来冷却硅片。 以上上述仅是本发明的优选实施方式， 应当指出， 对于本技术领 域的普通技术人员来说， 在不脱离本发明技术原理的前提下， 还可以 做出若干改进和润饰， 这些改进和润饰也应视为本发明的保护范围。
The above-described cooling chamber 4 is provided with an air intake means 9 having a gas flow meter and a flow divider for introducing the desired gas into the cooling chamber 4 and filling the entire cavity of the cooling chamber 4, thereby cooling the silicon wafer. The above is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the technical principles of the present invention. It should be considered as the scope of protection of the present invention.
Claims
1、用于太阳能电池片钝化的晶体硅氧化处理设备， 其特征在于， 包括氧化腔， 该氧化腔设有进气装置和光照装置， 该光照装置可以发 出 100- 5000nm波长范围内的光。 1. Crystalline silicon oxidation processing equipment for passivation of solar cells, characterized by including an oxidation chamber, which is provided with an air inlet device and a lighting device, and the lighting device can emit light in the wavelength range of 100-5000nm.
2、根据权利要求 1所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述光照装置进一步包括光源、 光照强度控制 模块、 光照时间控制模块和光照波长控制模块。 2. The crystalline silicon oxidation treatment equipment for passivation of solar cells according to claim 1, characterized in that the above-mentioned illumination device further includes a light source, an illumination intensity control module, an illumination time control module and an illumination wavelength control module.
3、根据权利要求 2所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述光源为红外光光源和 /或可见光光源。 3. The crystalline silicon oxidation treatment equipment for passivation of solar cells according to claim 2, characterized in that the above-mentioned light source is an infrared light source and/or a visible light source.
4、根据权利要求 3所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述光源为连续波长光源。 4. The crystalline silicon oxidation treatment equipment for passivation of solar cells according to claim 3, characterized in that the above-mentioned light source is a continuous wavelength light source.
5、根据权利要求 4所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述氧化腔内还设有加热装置。 5. The crystalline silicon oxidation treatment equipment for passivation of solar cells according to claim 4, characterized in that the above-mentioned oxidation chamber is further provided with a heating device.
6、根据权利要求 5所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述氧化腔还设有出气装置。 6. The crystalline silicon oxidation treatment equipment for passivation of solar cells according to claim 5, characterized in that the above-mentioned oxidation chamber is also provided with a gas outlet device.
7、根据权利要求 1-6中任一项所述的用于太阳能电池片钝化的晶 体硅氧化处理设备， 其特征在于， 还包括上料台、 加热仓、 冷却仓和 下料台。 7. The crystalline silicon oxidation treatment equipment for passivation of solar cells according to any one of claims 1 to 6, characterized in that it also includes a loading platform, a heating chamber, a cooling chamber and an unloading platform.
8、根据权利要求 7所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述加热装置为电阻加热器和 /或光照加热器。 8. The crystalline silicon oxidation treatment equipment for solar cell passivation according to claim 7, characterized in that the above-mentioned heating device is a resistance heater and/or a light heater.
9、根据权利要求 8所述的用于太阳能电池片钝化的晶体硅氧化处 理设备， 其特征在于， 上述电阻加热器连接有功率控制模块， 上述光 照加热器连接有辐照强度控制模块。 9. The crystalline silicon oxidation treatment equipment for solar cell passivation according to claim 8, characterized in that the resistance heater is connected to a power control module, and the light heater is connected to a radiation intensity control module.
10、 根据权利要求 9所述的用于太阳能电池片钝化的晶体硅氧化 处理设备， 其特征在于， 上述氧化腔和 /或加热仓设有可实时监控硅 片温度的测温装置。
10. The crystalline silicon oxidation processing equipment for solar cell passivation according to claim 9, characterized in that the above-mentioned oxidation chamber and/or heating chamber are equipped with a temperature measuring device that can monitor the temperature of the silicon wafer in real time.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2013203466536U CN203325957U (en) | 2013-06-18 | 2013-06-18 | Crystalline silicon oxidation processing device for solar energy cell sheet passivation |
| CN201320346653.6 | 2013-06-18 |
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| WO2014201975A1 true WO2014201975A1 (en) | 2014-12-24 |
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| PCT/CN2014/079837 WO2014201975A1 (en) | 2013-06-18 | 2014-06-13 | Crystalline silicon oxidation processing device for solar cell sheet passivation |
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| CN (1) | CN203325957U (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107527972A (en) * | 2017-09-29 | 2017-12-29 | 理想晶延半导体设备（上海）有限公司 | A kind of crystal silicon solar batteries processing equipment |
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| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN203325957U (en) * | 2013-06-18 | 2013-12-04 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar energy cell sheet passivation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11266029A (en) * | 1998-03-18 | 1999-09-28 | Sharp Corp | Solar cell, manufacture and connection thereof |
| CN102817013A (en) * | 2012-08-28 | 2012-12-12 | 夏洋 | Photochemical deposition device for solar cells |
| CN103050569A (en) * | 2011-10-17 | 2013-04-17 | 欧司朗股份有限公司 | Method for producing a photovoltaic element comprising a silicon dioxide layer |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN203325957U (en) * | 2013-06-18 | 2013-12-04 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar energy cell sheet passivation |
-
2013
- 2013-06-18 CN CN2013203466536U patent/CN203325957U/en not_active Expired - Lifetime
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2014
- 2014-06-13 TW TW103210467U patent/TWM496236U/en unknown
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11266029A (en) * | 1998-03-18 | 1999-09-28 | Sharp Corp | Solar cell, manufacture and connection thereof |
| CN103050569A (en) * | 2011-10-17 | 2013-04-17 | 欧司朗股份有限公司 | Method for producing a photovoltaic element comprising a silicon dioxide layer |
| CN102817013A (en) * | 2012-08-28 | 2012-12-12 | 夏洋 | Photochemical deposition device for solar cells |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN203325957U (en) * | 2013-06-18 | 2013-12-04 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar energy cell sheet passivation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107527972A (en) * | 2017-09-29 | 2017-12-29 | 理想晶延半导体设备（上海）有限公司 | A kind of crystal silicon solar batteries processing equipment |
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| CN203325957U (en) | 2013-12-04 |
| TWM496236U (en) | 2015-02-21 |
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