WO2014201975A1 - Dispositif de traitement d'oxydation du silicium cristallin pour passivation de feuille de cellule solaire - Google Patents

Dispositif de traitement d'oxydation du silicium cristallin pour passivation de feuille de cellule solaire Download PDF

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Publication number
WO2014201975A1
WO2014201975A1 PCT/CN2014/079837 CN2014079837W WO2014201975A1 WO 2014201975 A1 WO2014201975 A1 WO 2014201975A1 CN 2014079837 W CN2014079837 W CN 2014079837W WO 2014201975 A1 WO2014201975 A1 WO 2014201975A1
Authority
WO
WIPO (PCT)
Prior art keywords
crystalline silicon
passivation
silicon oxidation
chamber
light source
Prior art date
Application number
PCT/CN2014/079837
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English (en)
Chinese (zh)
Inventor
陈培良
任常瑞
符黎明
Original Assignee
常州时创能源科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州时创能源科技有限公司 filed Critical 常州时创能源科技有限公司
Publication of WO2014201975A1 publication Critical patent/WO2014201975A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a crystalline silicon oxidation processing apparatus for passivation of solar cells. Background technique
  • the lattice distortion of the silicon oxide/silicon interface is small, and silicon oxide can passivate the silicon surface well. Therefore, the growth of a silicon oxide film between silicon and silicon nitride film can effectively solve the lattice distortion. Problem, thereby improving the passivation effect.
  • the devices for growing silicon oxide thin films on the surface of crystalline silicon wafers mainly include high-temperature oxidation equipment and wet chemical oxidation equipment, but the former requires an extra high temperature process, consumes a large amount of energy, and reduces the life of the silicon wafer, while the latter increases the process.
  • the complexity, while the silicon oxide film is not dense enough, can not meet the requirements of the process. Summary of the invention
  • An object of the present invention is to provide a crystalline silicon oxidation processing apparatus for passivation of a solar cell sheet which is capable of forming a silicon oxide layer on a surface of a crystalline silicon under low temperature conditions to enhance surface passivation of a crystalline silicon solar cell.
  • the technical solution of the present invention is to design a crystalline silicon oxidation processing apparatus for passivation of a solar cell, comprising an oxidation chamber provided with an air intake device and an illumination device, and the illumination device can emit 100 Light in the -5000 nm wavelength range.
  • the air intake device is used to input oxidizing gas such as oxygen, ozone, air, water into the oxidation chamber.
  • oxidizing gas such as oxygen, ozone, air, water
  • a silicon oxide layer can be formed on the surface of the crystalline silicon under low temperature conditions, for example, the oxidation treatment temperature can be 0-450 ° C:.
  • the illumination device further comprises a light source, a light intensity control module, a illumination time control module and an illumination wavelength control module.
  • the light source is an infrared light source and/or a visible light source.
  • the light source is a continuous wavelength light source capable of emitting light having a continuously distributed wavelength.
  • the oxidation chamber is further provided with a heating device for heating the oxidation chamber to control the temperature in the oxidation chamber.
  • the oxidation chamber is further provided with an air outlet device.
  • the apparatus further comprises a loading station, a heating chamber, a cooling chamber and a loading station for completing the production line with the oxidation chamber.
  • the heating device is a resistance heater and/or a light heater.
  • the electric resistance heater is connected to the power control module, and the illumination heater is connected to the irradiation intensity control module.
  • the oxidizing chamber and/or the heating chamber are provided with temperature measuring devices for real-time monitoring of the temperature of the silicon wafer.
  • An advantage and an advantageous effect of the present invention is to provide a crystalline silicon oxidation processing apparatus for solar cell passivation which can form a silicon oxide layer on a surface of a crystalline silicon under low temperature conditions and enhance surface passivation of a crystalline silicon solar cell.
  • the device is low in cost, simple in structure, stable in stability, and compatible with current semiconductor processes and solar cell processes.
  • Figure 1 is a schematic view of the present invention. detailed description
  • the apparatus of the present invention can be used in a manufacturing process of a solar cell, and a thin silicon oxide is formed on the surface of the silicon wafer by the device before the silicon nitride coating is applied to the crystalline silicon wafer, and then the conventional silicon nitride coating is performed. Thereby, the passivation effect of the surface of the silicon wafer can be enhanced, and the photoelectric conversion efficiency of the solar cell can be improved.
  • the core of the invention resides in an oxidizing chamber provided with an air intake means and an illumination means, and the light illuminating means can emit light in the wavelength range of 100-5000 nm.
  • the air inlet device is used for inputting one or more kinds of oxidizing gases, such as oxygen, ozone, air, water vapor and laughing gas, into the oxidation chamber; the illumination device illuminates the crystalline silicon placed in the oxidizing gas to make the crystalline silicon surface A silicon oxide layer is formed; in particular, when light is used in the wavelength range of 100-5000 nm, a silicon oxide layer can be formed on the surface of the crystalline silicon at a low temperature, for example, the oxidation treatment temperature can be 0-450 ° C:.
  • oxidizing gases such as oxygen, ozone, air, water vapor and laughing gas
  • a crystalline silicon oxidation processing apparatus for passivation of a solar cell includes a loading stage 1, a heating chamber 2, an oxidation chamber 3, a cooling chamber 4, and a loading table 5, which are sequentially disposed, and a silicon wafer. It is transmitted by the roller 10.
  • the heating chamber 2 is provided with a heating device 6 adjustable in distance from the silicon wafer, and the heating device 6 can be heated by an infrared lamp tube; the heating chamber 2 is further provided with an air outlet device and a temperature measuring device capable of monitoring the temperature of the silicon wafer in real time. .
  • the oxidizing chamber 3 is provided with an air inlet means 7 with a gas flow meter and a flow divider, and an illumination means 8 which is adjustable in distance from the silicon wafer, and which illuminates the light in the wavelength range of 100-5000 nm.
  • the illumination device 8 further includes a light source, a light intensity control module, an illumination time control module, and an illumination wavelength control module.
  • the above light source may be one or more of an ultraviolet light source, an infrared light source, and a visible light source.
  • the above light source may be a continuous wavelength source for emitting light of a continuously distributed wavelength.
  • the oxidation chamber 3 is further provided with an adjustable position heating device, and the heating device can heat the oxidation chamber to control the temperature in the oxidation chamber, such as controlling the temperature in the oxidation chamber 3 to 0-450 °C:.
  • the heating device is a resistance heater and/or a light heater, and the resistor is added
  • the heat exchanger is connected with a power control module, and the illumination heater is connected with an irradiation intensity control module.
  • the oxidizing chamber 3 is further provided with an air outlet means and a temperature measuring means for monitoring the temperature of the silicon wafer in real time.
  • the above-described cooling chamber 4 is provided with an air intake means 9 having a gas flow meter and a flow divider for introducing the desired gas into the cooling chamber 4 and filling the entire cavity of the cooling chamber 4, thereby cooling the silicon wafer.
  • an air intake means 9 having a gas flow meter and a flow divider for introducing the desired gas into the cooling chamber 4 and filling the entire cavity of the cooling chamber 4, thereby cooling the silicon wafer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne un dispositif de traitement d'oxydation du silicium cristallin pour passivation d'une feuille de cellule solaire, comprenant une chambre d'oxydation pourvue d'un dispositif d'admission d'air et un dispositif d'éclairage, ce dernier permettant d'émettre de la lumière avec une longueur d'onde comprise dans la plage allant de 100 à 5000 nm. Le dispositif génère une couche d'oxyde de silicium sur la surface du silicium cristallin dans des conditions de basse température, ce qui permet d'améliorer la passivation de surface de cellules solaires en silicium cristallin. Le dispositif est bon marché, de structure simple, stable et compatible avec la technologie des semi-conducteurs et des cellules solaires existante.
PCT/CN2014/079837 2013-06-18 2014-06-13 Dispositif de traitement d'oxydation du silicium cristallin pour passivation de feuille de cellule solaire WO2014201975A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201320346653.6 2013-06-18
CN2013203466536U CN203325957U (zh) 2013-06-18 2013-06-18 用于太阳能电池片钝化的晶体硅氧化处理设备

Publications (1)

Publication Number Publication Date
WO2014201975A1 true WO2014201975A1 (fr) 2014-12-24

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Application Number Title Priority Date Filing Date
PCT/CN2014/079837 WO2014201975A1 (fr) 2013-06-18 2014-06-13 Dispositif de traitement d'oxydation du silicium cristallin pour passivation de feuille de cellule solaire

Country Status (3)

Country Link
CN (1) CN203325957U (fr)
TW (1) TWM496236U (fr)
WO (1) WO2014201975A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107527972A (zh) * 2017-09-29 2017-12-29 理想晶延半导体设备（上海）有限公司 一种晶硅太阳能电池处理设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103311372A (zh) * 2013-06-18 2013-09-18 常州时创能源科技有限公司 用于太阳能电池片钝化的晶体硅氧化处理设备
CN203325957U (zh) * 2013-06-18 2013-12-04 常州时创能源科技有限公司 用于太阳能电池片钝化的晶体硅氧化处理设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11266029A (ja) * 1998-03-18 1999-09-28 Sharp Corp 太陽電池及びその製造方法及びその接続方法
CN102817013A (zh) * 2012-08-28 2012-12-12 夏洋 一种太阳能电池用光致化学沉积装置
CN103050569A (zh) * 2011-10-17 2013-04-17 欧司朗股份有限公司 用于制造包括二氧化硅层的光伏元件的方法
CN103311372A (zh) * 2013-06-18 2013-09-18 常州时创能源科技有限公司 用于太阳能电池片钝化的晶体硅氧化处理设备
CN203325957U (zh) * 2013-06-18 2013-12-04 常州时创能源科技有限公司 用于太阳能电池片钝化的晶体硅氧化处理设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11266029A (ja) * 1998-03-18 1999-09-28 Sharp Corp 太陽電池及びその製造方法及びその接続方法
CN103050569A (zh) * 2011-10-17 2013-04-17 欧司朗股份有限公司 用于制造包括二氧化硅层的光伏元件的方法
CN102817013A (zh) * 2012-08-28 2012-12-12 夏洋 一种太阳能电池用光致化学沉积装置
CN103311372A (zh) * 2013-06-18 2013-09-18 常州时创能源科技有限公司 用于太阳能电池片钝化的晶体硅氧化处理设备
CN203325957U (zh) * 2013-06-18 2013-12-04 常州时创能源科技有限公司 用于太阳能电池片钝化的晶体硅氧化处理设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107527972A (zh) * 2017-09-29 2017-12-29 理想晶延半导体设备（上海）有限公司 一种晶硅太阳能电池处理设备

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CN203325957U (zh) 2013-12-04
TWM496236U (zh) 2015-02-21

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