CN111733399A - Crystalline silicon solar cell film coating method and film coating equipment - Google Patents
Crystalline silicon solar cell film coating method and film coating equipment Download PDFInfo
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims description 22
- 238000009501 film coating Methods 0.000 title claims description 12
- 239000007888 film coating Substances 0.000 title claims description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 3
- 230000003749 cleanliness Effects 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 34
- 238000000151 deposition Methods 0.000 description 22
- 230000008021 deposition Effects 0.000 description 14
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 101150097381 Mtor gene Proteins 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention discloses a crystalline silicon solar cell coating method, which is characterized by comprising the following steps: comprises the following steps; step one, carrying out UV ultraviolet cleaning on a PECVD cache bin by adopting a UV ultraviolet cleaning system; placing the annealed silicon wafer into the cache bin, carrying out UV cleaning on the silicon wafer by adopting a UV cleaning system, and then preparing a back passivation layer on the silicon wafer; thirdly, oxidizing and cleaning the cache bin by using a UV (ultraviolet) cleaning system; and fourthly, placing the silicon wafer plated with the back passivation layer into the cache bin, carrying out oxidation cleaning on the silicon wafer plated with the back passivation layer by adopting a UV (ultraviolet) cleaning system, and then preparing a front film antireflection layer on the silicon wafer plated with the back passivation layer. According to the invention, the UV cleaning system is added in the PECVD buffer bin, so that the wettability and the cleanliness of the surface of the silicon wafer are effectively improved, and the film color uniformity of the cell is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a crystalline silicon solar cell film coating method and film coating equipment.
Background
Crystalline silicon (Si) cells are used as leading products of solar cells, production cost is reduced day by day, production processes are improved day by day, but efficiency is about to reach an efficiency bottleneck, and the efficiency of the cells is improved while attractiveness is one of potential requirements of customers.
The preparation process of the crystalline silicon solar cell generally comprises the steps of texturing, diffusion, front laser, annealing, back passivation film, front passivation film, back laser, screen printing, sintering and the like.
The steps of plating the back passivation film and the front passivation film on the silicon wafer generally adopt a tubular PECVD (plasma enhanced Chemical Vapor Deposition) film plating process, and although the plasma can improve the wettability and the film plating uniformity of the surface of an object in the process, the plasma in the tubular PECVD cannot directly clean the surface of the silicon wafer and cannot play a role in cleaning, so that the phenomena of B-level wafers such as color difference wafers, dirty wafers and the like can be caused after the film plating process. Impurities such as dust and organic molecules can be actively adsorbed on the surface of the silicon wafer exposed in the air, meanwhile, the silicon wafer is polluted (fingerprints) due to illegal operation of operators, and the potential factors can cause the color difference of the PECVD coated film. At present, customers generally like the battery plates with uniform colors and darker film colors. Therefore, a method for improving the coating uniformity of the crystalline silicon solar cell is urgently needed to be developed, the coating uniformity of the PECVD is improved, and the attractiveness of the device is improved.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the traditional crystalline silicon solar cell coating method has the problem of color difference after coating.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a crystalline silicon solar cell film coating method is characterized in that: comprises the following steps;
step one, carrying out ultraviolet cleaning on a cache bin of plasma enhanced chemical vapor deposition equipment by adopting an ultraviolet cleaning system;
placing the annealed silicon wafer into the cache bin, performing ultraviolet cleaning on the silicon wafer by adopting an ultraviolet cleaning system, and then preparing a back passivation layer on the silicon wafer;
step three, carrying out ultraviolet cleaning on the cache bin by adopting an ultraviolet cleaning system;
and fourthly, placing the silicon wafer plated with the back passivation layer into the cache bin, performing ultraviolet cleaning on the silicon wafer plated with the back passivation layer by adopting an ultraviolet cleaning system, and then preparing a front film antireflection layer on the silicon wafer plated with the back passivation layer.
Preferably, the ultraviolet cleaning time in the first step is 10 to 30 minutes.
Preferably, the ultraviolet cleaning time in the second step is 10 to 30 minutes.
Preferably, the ultraviolet cleaning time in the third step is 10 to 30 minutes.
Preferably, the ultraviolet cleaning time in the fourth step is 10 to 30 minutes.
Preferably, the ultraviolet cleaning method is to decompose oxygen in the air into ozone by ultraviolet light of 185 nm, decompose ozone into oxygen and active oxygen by ultraviolet light of 254 nm, and perform oxidation reaction between the active oxygen and organic molecules to generate volatile gas to escape, thereby realizing surface cleaning.
The utility model provides a crystalline silicon solar cell coating equipment, includes plasma enhanced chemical vapor deposition equipment's board, buffer memory storehouse, its characterized in that: an ultraviolet cleaning system is arranged in the buffer bin and comprises two ultraviolet lamp tubes and a reflector, and the wavelengths of ultraviolet light emitted by the two ultraviolet lamp tubes are 185 nanometers and 254 nanometers respectively.
The invention has the beneficial effects that: in the existing manufacturing process of the crystalline silicon cell by plasma enhanced chemical vapor deposition, the conditions of chromatic aberration and uneven film color in the film coating process can be caused by the fact that a silicon wafer can automatically adsorb organic molecules in the air and fingerprints and the like caused by artificial illegal operation, and the yield and the integral aesthetic property of the solar cell are seriously influenced; according to the invention, the ultraviolet cleaning system is added in the buffer bin of the plasma enhanced chemical vapor deposition equipment, so that the wettability and cleanliness of the surface of the silicon wafer are effectively improved, and the film color uniformity of the cell is improved.
Drawings
FIG. 1 is a graph comparing the refractive index of the front and back films of the present invention with that of a normal process.
FIG. 2 is a graph comparing the film thickness of the front and back films of the present invention with that of a normal process.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
A preparation method of a crystalline silicon solar cell comprises the following steps:
s1, texturing: forming a suede surface on the surface of the P-type monocrystalline silicon wafer by using a wet process technology;
s2, diffusion: forming a P-N junction by diffusion;
s3, front laser: preparing a selective emitter, and heavily doping the surface of the silicon wafer by using laser;
s4, etching: removing the phosphorosilicate glass;
s5, annealing: repairing the damage of the front laser to the surface of the silicon chip, passivating the surface and reducing the recombination of current carriers.
The following steps 6 to 9 are innovative points of the invention, the coating method of the steps 6 to 9 replaces the traditional steps of back passivation film and front passivation film, the crystalline silicon solar cell coating equipment adopted in the steps 6 to 9 comprises a machine table and a cache bin of plasma enhanced chemical vapor deposition equipment, an ultraviolet cleaning system is arranged in the cache bin, the ultraviolet cleaning system comprises two ultraviolet lamp tubes and a reflector, the ultraviolet lamp tubes have two types, and the wavelengths of the two types of ultraviolet lamp tubes are 185 nanometers and 254 nanometers respectively. When in ultraviolet cleaning, an ultraviolet lamp tube with the wavelength of 185 nanometers is firstly opened, and the ultraviolet light with the wavelength of 185 nanometers leads oxygen (O) in the air2) Decomposed into ozone (O)3) Then the 254 nm ultraviolet lamp tube is opened, the 254 nm ultraviolet lamp tube is openedLight decomposes ozone into oxygen (O)2) And active oxygen (O) to excite the organic molecules on the surface of the silicon chip and improve the sensitivity of the silicon chip, and the reflector is used for reflecting ultraviolet rays to achieve the effects of saving energy and improving efficiency. The back film deposition device can be used for depositing a back film and a front film deposition device, and the back film deposition device and the front film deposition device can also be used for depositing a back film and a front film deposition device respectively.
S6, cleaning a back membrane cache bin: and (3) preprocessing the back film PECVD buffer bin by using an ultraviolet cleaning system, wherein the cleaning time is 20 minutes so as to ensure the cleanness degree of the surface of the silicon wafer in the processing process.
S7, cleaning the silicon wafer and depositing a back film: putting the silicon wafer into a back film PECVD (plasma enhanced chemical vapor deposition) cache, cleaning the silicon wafer by using an ultraviolet cleaning system for 20 minutes to realize the effects of cleaning the surface of the silicon wafer and treating the surface, and then putting the silicon wafer to be coated with the back film after ultraviolet cleaning into a PECVD graphite boat for preparing the back film, wherein the back film is generally aluminum oxide (Al)2O3) Film, silicon nitride (SiN)X) Film, alumina (Al)2O3) Deposition process parameters of the film: deposition power 4200 watts, deposition pressure 1500 millitorr (mTor), deposition duty cycle 2:100 milliseconds, nitrous oxide (N)2O) flow 3000 liters per minute (sccm), trimethylaluminum (Al (CH)3)3) Flow rate 81000 standard liters per minute (sccm), deposition time 80 seconds; silicon nitride (SiN)X) Deposition process parameters of the film: deposition power 14220 watts, deposition pressure 1500 millitorr (mTor), deposition duty cycle 5:70 milliseconds, nitrous oxide (N)2O) flow 3000 liters per minute (sccm), Silane (SiH)4) The flow rate was 1000 standard liters per minute (sccm) and the deposition time was 180 seconds.
S8, cleaning a positive film cache bin: and (3) preprocessing the positive film PECVD cache by using an ultraviolet cleaning system, wherein the cleaning time is 20 minutes so as to ensure the cleanness degree of the surface of the silicon wafer in the processing process.
S9, cleaning the silicon wafer and depositing a front surface film: putting the silicon wafer into a positive film PECVD (plasma enhanced chemical vapor deposition) cache, and cleaning the silicon wafer by using an ultraviolet cleaning system for 20 minutes to realize the purpose of cleaning the silicon waferCleaning and surface treating the surface, placing the silicon wafer to be coated with positive film after ultraviolet cleaning in graphite for positive film silicon nitride (SiN)X) Preparing an anti-reflection layer, depositing at 450 ℃, depositing at 10800 watts, depositing at 1500 mTor, depositing at 2:30 milliseconds duty ratio and ammonia (NH)3) 6800 normal liters per minute (sccm), Silane (SiH)4) The flow rate was 1000 standard liters per minute (sccm) and the deposition time was 220 seconds.
S10, back laser: forming a back contact.
S11, screen printing: and printing back silver paste, back aluminum paste and front silver paste, and sintering to form ohmic contact so as to complete the manufacturing process of the monocrystalline silicon solar cell.
The principle of the invention is as follows: the presence of the UV cleaning system, 185 nm UV light first removes oxygen (O) from the air when UV ozone treatment is performed2) Decomposed into ozone (O)3) 254 nm ultraviolet light to convert ozone (O)3) Decomposition into oxygen (O)2) And active oxygen (O), the photosensitive oxidation process is carried out uninterruptedly, due to the strong oxidizing property of the active oxygen (O), the continuously generated active oxygen (O) and the excited organic molecules on the surface of the silicon wafer generate oxidation reaction, and the generated volatile gas escapes from the surface of the silicon wafer, so that the cleaning and surface treatment of the silicon wafer are finally realized, the cleanliness of the silicon wafer is ensured during the PECVD coating process, and the coating uniformity of the battery piece is improved. Meanwhile, by representing the silicon wafers adopting the normal process and the ultraviolet treatment process, as can be seen from the first graph and the second graph, the silicon wafers adopting the process provided by the invention obtain more uniformly distributed refractive indexes and film thicknesses, and the film coating uniformity of the cell can be effectively improved by directly proving that the film coating method of the crystalline silicon solar cell provided by the invention can be used for effectively improving the film coating uniformity of the cell.
It will be obvious to those skilled in the art that the present invention may be varied in many ways, and that such variations are not to be regarded as a departure from the scope of the invention. All such modifications as would be obvious to one skilled in the art are intended to be included within the scope of this claim.
Claims (7)
1. A crystalline silicon solar cell film coating method is characterized in that: comprises the following steps;
step one, carrying out ultraviolet cleaning on a cache bin of plasma enhanced chemical vapor deposition equipment by adopting an ultraviolet cleaning system;
placing the annealed silicon wafer into the cache bin, performing ultraviolet cleaning on the silicon wafer by adopting an ultraviolet cleaning system, and then preparing a back passivation layer on the silicon wafer;
step three, carrying out ultraviolet cleaning on the cache bin by adopting an ultraviolet cleaning system;
and fourthly, placing the silicon wafer plated with the back passivation layer into the cache bin, performing ultraviolet cleaning on the silicon wafer plated with the back passivation layer by adopting an ultraviolet cleaning system, and then preparing a front film antireflection layer on the silicon wafer plated with the back passivation layer.
2. The crystalline silicon solar cell coating method of claim 1, wherein: the ultraviolet cleaning time in the step one is 10 to 30 minutes.
3. The crystalline silicon solar cell coating method of claim 1, wherein: and the ultraviolet cleaning time in the second step is 10 to 30 minutes.
4. The crystalline silicon solar cell coating method of claim 1, wherein: the ultraviolet cleaning time in the third step is 10 to 30 minutes.
5. The crystalline silicon solar cell coating method of claim 1, wherein: and in the fourth step, the ultraviolet cleaning time is 10 to 30 minutes.
6. The crystalline silicon solar cell coating method of any one of claims 1 to 5, wherein: the ultraviolet cleaning method comprises the steps of firstly decomposing oxygen in the air into ozone by utilizing 185-nanometer ultraviolet light, then decomposing the ozone into oxygen and active oxygen by utilizing 254-nanometer ultraviolet light, and enabling generated volatile gas to escape through oxidation reaction between the active oxygen and organic molecules, so that surface cleaning is realized.
7. The utility model provides a crystalline silicon solar cell coating equipment, includes plasma enhanced chemical vapor deposition equipment board, buffer bin, its characterized in that: an ultraviolet cleaning system is arranged in the buffer bin and comprises two ultraviolet lamp tubes and a reflector, and the wavelengths of ultraviolet light emitted by the two ultraviolet lamp tubes are 185 nanometers and 254 nanometers respectively.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113659044A (en) * | 2021-08-17 | 2021-11-16 | 通威太阳能(金堂)有限公司 | Cleaner and method for improving conversion efficiency of heterojunction solar cell |
| CN114602995A (en) * | 2022-02-25 | 2022-06-10 | 江苏铭展特钢制造有限公司 | High-pressure-resistant corrosion-resistant stainless steel bar and processing technology thereof |
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