CN110071178A - A kind of preparation method being sliced battery and slice battery and photovoltaic module - Google Patents
A kind of preparation method being sliced battery and slice battery and photovoltaic module Download PDFInfo
- Publication number
- CN110071178A CN110071178A CN201910294479.7A CN201910294479A CN110071178A CN 110071178 A CN110071178 A CN 110071178A CN 201910294479 A CN201910294479 A CN 201910294479A CN 110071178 A CN110071178 A CN 110071178A
- Authority
- CN
- China
- Prior art keywords
- battery
- slice
- sub
- preparation
- disruption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 36
- 230000003647 oxidation Effects 0.000 claims abstract description 35
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 19
- 238000012545 processing Methods 0.000 abstract description 15
- 230000000694 effects Effects 0.000 abstract description 9
- 230000001681 protective effect Effects 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 150000001875 compounds Chemical class 0.000 abstract description 5
- 238000000137 annealing Methods 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 13
- 238000012360 testing method Methods 0.000 description 10
- 230000000712 assembly Effects 0.000 description 8
- 238000000429 assembly Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 238000010998 test method Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of preparation methods for being sliced battery, after the scribing of full wafer battery laser, sliver, obtain multiple independent sub- cell pieces, sub- cell piece has at least one plane of disruption；Thermal oxidation is carried out to the plane of disruption；Thermal oxidation includes: by sub- cell piece at 180 degrees Celsius to 230 degrees Celsius, and under an oxygen-containing atmosphere, the processing time is 20 to 60 minutes.The present invention is after full wafer battery sliver; thermal oxidation is carried out to the plane of disruption of independent sub- cell piece; it can be avoided the compound of the photo-generated carrier generated by photoelectric effect in the plane of disruption in the silicon dioxide protective film that the plane of disruption is formed, and then substantially improve the photoelectric efficiency of slice battery.The present invention also provides a kind of slice batteries of preparation method preparation based on slice battery, and the photovoltaic module constituted based on slice battery.
Description
Technical field
The present invention relates to technical field of solar utilization technique, more particularly to a kind of preparation method for being sliced battery and slice electricity
Pond and photovoltaic module.
Background technique
In recent years, the development of photovoltaic technology is very swift and violent, and the transfer efficiency of industrial high-efficiency crystal-silicon battery slice is with every year about
The amplitude of 0.5% absolute efficiency is incremented by.And with the promotion of crystal-silicon battery slice efficiency, the current density of crystal-silicon battery slice also with
It is promoted, has broken through 40.3 milliamps per square centimeter at present.And as the current density of crystal-silicon battery slice is substantially increased, full wafer electricity
The electric current of pond piece is also significantly increased, and causes the mode of traditional photovoltaic module formed by full wafer cell piece electrical interconnection that can produce
Raw higher power loss.
With the high speed development of laser technology, laser dicing, which becomes, improves the very economical property of full wafer cell piece power loss
Solution.Full wafer cell piece is cut into the slice battery of half or multiple small pieces using laser cutting technique, then again
Slice battery is connected using conductive welding, series current accordingly drops to the 1/N of full wafer electric current, and (N be the number being sliced
Amount), the electric current decline for being sliced battery can improve the power loss of photovoltaic module.
However as the further investigation discovery to laser dicing, although solving the problems, such as photovoltaic module power loss,
The problem of introducing slice battery efficiency loss again.Biggish slice battery efficiency loss limits the development of photovoltaic module technology.
Summary of the invention
In view of the above-mentioned problems, the object of the present invention is to provide the systems that one kind can improve the slice battery of slice battery efficiency
Preparation Method and slice battery and photovoltaic module.
To achieve the goals above, the invention adopts the following technical scheme:
After the scribing of full wafer battery laser, sliver, multiple independent sub- cell pieces are obtained, sub- cell piece has at least one
The plane of disruption；Thermal oxidation is carried out to the plane of disruption；Thermal oxidation includes: that sub- cell piece is Celsius at 180 degrees Celsius to 230
Degree, under an oxygen-containing atmosphere, processing time are 20 to 60 minutes.
By adopting the above technical scheme, due to be after full wafer battery sliver, i.e., to the plane of disruption of independent sub- cell piece into
Row thermal oxidation forms silicon dioxide protective film at the plane of disruption, and the silicon dioxide protective film of formation, which can be avoided, to be broken
The photo-generated carrier that face is generated by photoelectric effect it is compound, and then substantially improve slice battery photoelectric efficiency.In addition, hot oxygen
Sub- cell piece is heated to 180 degrees Celsius to 230 degrees Celsius under an oxygen-containing atmosphere by change processing, is carried out at annealing under oxygen-containing atmosphere
Reason, have the characteristics that it is safe and reliable, and anneal when temperature control at 180 degrees Celsius to 230 degrees Celsius, the plane of disruption can be repaired
Thermal stress and mechanical stress, the probability of crack occurs in use to reduce slice battery, improves entire slice battery
Quality.
Preferably, in thermal oxidation, multiple sub- cell pieces are stacked gradually into stacking.
Using above-mentioned technical proposal, multiple sub- cell pieces stack gradually stacking, i.e., underlying sub- cell piece is just
Face is covered by the back side for stacking sub- cell piece above it, and the side of only sub- cell piece is exposed outside, to avoid annealing
Adverse effect of the oxygen-containing atmosphere to sub- cell piece front and back in the process.
Preferably, oxygen-containing atmosphere is air atmosphere, and the time of thermal oxidation is 20 to 40 minutes.
Using above-mentioned technical proposal, implement annealing in static air atmosphere, i.e., without being passed through it in annealing process
His gas has many advantages, such as of less demanding to anneal environment, low in cost and is suitable for scale of mass production.
Preferably, oxygen-containing atmosphere is the mixed atmosphere of argon gas and oxygen.
Using above-mentioned technical proposal, in thermal oxidation, inert gas is to area locating for sub- cell piece to be annealed
Domain is purged, and the foreign gas in region locating for sub- cell piece is discharged, and is reduced or is avoided annealing process neutron electric completely
Adverse effect of the foreign gas in region locating for the piece of pond to sub- cell piece.Argon gas is passed through toward region locating for sub- cell piece when annealing
With the mixed gas of oxygen, to realize oxidation to the plane of disruption.
Preferably, the mass ratio of argon gas is 92% to 98% in mixed gas；The mass ratio of oxygen is 2% to 8%；Heat
Oxidation treatment time is 30 to 60 minutes.
Preferably, full wafer battery is HIT battery.
Preferably, HIT battery has including transparent conducting oxide layer.
Preferably, full wafer battery is PERC battery.
The present invention also provides a kind of slice battery prepared using above-mentioned slice battery preparation method and by slice electricity
The photovoltaic module that pond is constituted has the advantages that be sliced possessed by battery preparation method.
In conclusion the preparation method of slice battery of the present invention, due to being after full wafer battery sliver, i.e., to only
The plane of disruption of vertical sub- cell piece is passivated processing, forms silicon dioxide protective film in the plane of disruption, two formed in the plane of disruption
Silica protective film can be avoided the compound of the photo-generated carrier generated by photoelectric effect in the plane of disruption, and then substantially improves and cut
The photoelectric efficiency of piece battery.The slice battery prepared using the preparation method of slice battery, and be made of slice battery
Photovoltaic module equally have the above advantages.
Detailed description of the invention
Fig. 1 is a kind of overall structure diagram of the thermal oxidation apparatus of embodiment provided by the invention；
Fig. 2 is the overall structure diagram of the thermal oxidation apparatus of another embodiment provided by the invention.
Wherein: 10. sub- cell pieces, 11. pallets, 12. thermal-insulated frames, 13. heaters, 14. infrared heating fluorescent tubes；20. furnace
Body, 21. fire doors, 22. air inlet pipelines, 23. exhaust outlets.
Specific embodiment
Illustrate specific embodiment according to the present invention with reference to the accompanying drawing.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
To be implemented using other than the one described here other modes, therefore, the present invention is not limited to following public specific realities
Apply the limitation of example.
In order to solve slice battery efficiency loss the technical issues of, the present invention provide it is a kind of be sliced battery preparation method and
It is sliced battery and photovoltaic module.
First embodiment provided by the invention, be sliced the preparation method of battery the following steps are included:
S101, multiple independent sub- cell pieces after the scribing of full wafer battery laser, sliver, will be obtained, sub- cell piece has extremely
Few plane of disruption.
Full wafer battery is subjected to scribing processing in predeterminated position using laser, to obtain groove-like paddle-tumble, at this point, only existing
The surface of full wafer battery forms paddle-tumble, and full wafer battery separates not from groove-like paddle-tumble position and forms multiple independent son electricity
Pond piece；Groove-like paddle-tumble provides guiding role for subsequent sliver, i.e., when using it is mechanical carry out sliver when, full wafer battery will be along
It is divided at paddle-tumble, just forms multiple independent sub- cell pieces at this time, the breaking part of sub- cell piece forms the plane of disruption, and the plane of disruption is also
It is the side that sub- cell piece is cut.
Optionally, to scribing, the full wafer battery of sliver two main gate lines between generally there is cutting line domain, and it is above-mentioned default
Position is located at cutting line domain and parallel with main gate line.
S102, to the plane of disruption carry out thermal oxidation, thermal oxidation include: by sub- cell piece at 180 degrees Celsius extremely
230 degrees Celsius, under an oxygen-containing atmosphere, the processing time is 20 to 60 minutes.
By thermal oxidation, silicon dioxide protective film is formed at the plane of disruption, silicon dioxide protective film can be to the plane of disruption
Passivation is generated, can effectively inhibit the photo-generated carrier of photoelectric effect generation to be formed in the plane of disruption compound, to promote son
The photoelectric conversion efficiency of cell piece.When the plane of disruption is without thermal oxidation, the photo-generated carrier that photoelectric effect generates is easily
Formed in the plane of disruption it is compound, to reduce the photoelectric conversion efficiency of sub- cell piece.
Wherein, thermal oxidation refers to heating sub- cell piece under aerobic environment, so as to be exposed to ether ring
Oxidation reaction occurs for silicon and oxygen in border, ultimately forms silicon dioxide protective film.
Specifically, thermal oxidation includes: by sub- cell piece at 180 degrees Celsius to 230 degrees Celsius, under an oxygen-containing atmosphere,
Handling the time is 20 to 60 minutes.
Sub- cell piece is heated to 180 degrees Celsius to 230 degrees Celsius in oxygen-containing atmosphere, is carried out at annealing under oxygen-containing atmosphere
Reason.Relative to the annealing under hydrogeneous atmosphere, have the characteristics that safe and reliable.Temperature control is taken the photograph at 180 degrees Celsius to 230 when annealing
Family name's degree can repair the thermal stress and mechanical stress of the entire plane of disruption, and crack occurs in use to reduce slice battery
Probability, improve the quality of entire slice battery.When full wafer battery is HIT battery, especially with including transparent conducting oxide layer
HIT battery, anneal under 180 degrees Celsius to 230 degrees Celsius, while reformation can be played to including transparent conducting oxide layer
Effect is damaged caused by including transparent conducting oxide layer with repairing in laser scribing and/or sliver process.
Preferably, in thermal oxidation, multiple sub- cell pieces are stacked gradually into stacking.Multiple sub- cell pieces stack gradually
It places, i.e., the front of underlying sub- cell piece is completely covered by the back side for stacking sub- cell piece above it, only sub
The side of cell piece is exposed outside, to avoid in annealing process oxygen-containing atmosphere to the unfavorable shadow of sub- cell piece front and back
It rings.
Preferably, multiple sub- cell pieces are stacked gradually and is stacked on hollow out pallet.After annealing in this way, need to cool down
When, the hollow design of pallet is conducive to radiate and cool down.
In the preferred embodiment, oxygen-containing atmosphere is air atmosphere, and the time of thermal oxidation is 20 to 40 minutes.
In the present embodiment, by sub- cell piece under static atmosphere of air, 180 degrees Celsius to 230 degrees Celsius are heated to,
Handling the time is 20 to 40 minutes.Using aforesaid way, during heating without being passed through other gases, have to anneal environment
It is of less demanding, low in cost and be suitable for scale of mass production the advantages that.
In another preferred embodiment, oxygen-containing atmosphere is the mixed atmosphere of argon gas and oxygen.
In the present embodiment, it when thermal oxidation operates, is passed through inert gas first to exclude air, then passes to argon gas
The mixed atmosphere of argon gas and oxygen is formed with the mixed gas of oxygen.Inert gas is to region locating for sub- cell piece to be annealed
It is purged, the foreign gas in region locating for sub- cell piece is discharged, reduce or avoid completely annealing process neutron battery
Adverse effect of the foreign gas in region locating for piece to sub- cell piece.Annealing Shi Xiangzi cell piece locating for region be passed through argon gas and
The mixed gas of oxygen, to realize the oxidation to the plane of disruption.
It is further preferred that the mass ratio of argon gas is 92% to 98% in mixed gas；The mass ratio of oxygen be 2% to
8%.
On the basis of the above embodiments, further, the processing time is 30 to 60 minutes.
On the basis of the above embodiments, further, referring to Fig. 1, a specific embodiment of thermal oxidation is provided:
It is grasped as follows after above-mentioned steps S101 scribing, sliver obtain the sub- cell piece 10 at least one plane of disruption
Make:
Sub- cell piece 10 is stacked gradually on the pallet 11 for being placed on hollow out, push-in annealing station, includes on station of annealing
Thermal-insulated frame 12, thermal-insulated frame 12 at least have an opening, are pushed into thermal-insulated frame in order to carry the pallet 11 of sub- cell piece 10
In 12, the heater 13 in thermal-insulated frame 12 and being located at below pallet 11 is set, and is arranged in thermal-insulated frame 12 and is located at support
The infrared heating fluorescent tube 14 of 11 side of disk, it is the plane of disruption phase with sub- cell piece 10 that infrared heating fluorescent tube 14, which is preferable to provide position,
Pair side；
On annealing station, under still air environment, pass through 14 pairs of sub- cell pieces of heater 13 and infrared heating fluorescent tube
10 are heated, and heating time controlled at 20 to 40 minutes, and the temperature on sub- 10 surface of cell piece is controlled at 180 degrees Celsius to 220
Degree Celsius.
After time to be heated and temperature meet, the pallet 11 for carrying sub- cell piece 10 is released and cooled down from annealing station
To room temperature, heater 13 and infrared heating fluorescent tube 14 are closed, completes thermal oxidation.
On the basis of the above embodiments, further, referring to fig. 2, another specific reality of thermal oxidation is provided
Apply example:
It is grasped as follows after above-mentioned steps S101 scribing, sliver obtain the sub- cell piece 10 at least one plane of disruption
Make:
In the present embodiment, there is the device that can be applied to thermal oxidation, including closed furnace body 20, furnace body 20 has
At least one fire door 21, has at least one air inlet pipeline 22 through furnace body 20, has at least one exhaust outlet through furnace body 20
23, multiple pallets 11 can be sequentially placed in furnace body 20, multiple sub- cell pieces 10 are stacked gradually on pallet 11, in furnace body 20
Non- opening face at least one heater 13 is set.
Thermal oxidation method using the device of above-mentioned thermal oxidation includes:
Sub- cell piece 10 is stacked gradually and is placed on pallet 11, fire door 21 is opened, the support of sub- cell piece 10 will be carried
Disk 11 is placed in furnace body 20, and heater 13；
When temperature is lower than 180 degrees Celsius in furnace body 20, the indifferent gas such as nitrogen are passed through into furnace body 20 by air inlet pipeline 22
Body, inert gas are discharged after flowing through furnace body 20 from exhaust outlet 23；
When temperature is higher than 180 degrees Celsius in furnace body 20, argon gas and oxygen are passed through into furnace body 20 by air inlet pipeline 22
Mixed gas, the mass ratio of argon gas is 92% to 98% in mixed gas；The mass ratio of oxygen is 2% to 8%；
At 180 degrees Celsius to 230 degrees Celsius, heating time was controlled at 30 to 60 minutes for temperature control in furnace body 20；
After time to be heated and temperature meet, the pallet 11 for carrying sub- cell piece 10 is taken out and cooled down out of furnace body 20
To room temperature, heater 13 is closed, completes thermal oxidation.
The present invention also provides a kind of slice battery prepared using above-mentioned slice battery preparation method and by the slice
The photovoltaic module that battery is constituted.
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment 1
S101, whole piece HIT battery is taken, there is including transparent conducting oxide layer on full wafer HIT battery.By full wafer HIT electricity
Pond carries out scribing processing in predeterminated position using laser, wherein predeterminated position is between two main gate lines and parallel with main gate line；
After scribing processing, sliver processing is carried out by the way of mechanical sliver, forms 5 main grid half figure HIT batteries after sliver processing
Piece.
S102,5 main grid half figure HIT cell pieces are stacked gradually on the pallet 11 for be placed on hollow out (referring specifically to figure
1), push-in annealing station opens the heater 13 and infrared heating fluorescent tube 14 in thermal-insulated frame 12, to 5 under still air environment
Main grid half figure HIT cell piece is heated, and heating time is 30 minutes, the temperature on 5 main grid half figure HIT cell piece surfaces
Degree control is at 200 degrees Celsius.
S103, after the time to be heated, the pallets 11 of 5 main grid half figure HIT cell pieces will be carried from lehr attendant
It releases and is cooled to room temperature in position.
Obtained slice battery, is denoted as A1.
Embodiment 2
S101, full wafer PERC cell piece is subjected to scribing processing in predeterminated position using laser, it is main that predeterminated position is located at two
It is between grid line and parallel with main gate line；After scribing processing, sliver processing, shape after sliver processing are carried out by the way of mechanical sliver
At mutually independent 5 main grid half figure PERC cell piece；
S102,5 main grid half figure PERC cell pieces are stacked gradually on the pallet 11 for being placed on hollow out (referring specifically to
Fig. 1), push-in annealing station opens the heater 13 and infrared heating fluorescent tube 14 in thermal-insulated frame 12 under still air environment,
5 main grid half figure PERC cell pieces are heated, heating time is 30 minutes, 5 main grid half figure PERC cell piece tables
The temperature in face is controlled at 200 degrees Celsius.
S103, after the time to be heated, the pallets 11 of 5 main grid half figure PERC cell pieces will be carried from lehr attendant
It releases and is cooled to room temperature in position.
Obtained slice battery, is denoted as A2.
Comparative example 1
With embodiment 1 the difference is that only carrying out S101, without S102 and S103.
Obtained slice battery, is denoted as B1.
Comparative example 2
With embodiment 2 the difference is that only carrying out S101, without S102 and S103.
Obtained slice battery, is denoted as B2.
Performance test:
Slice battery A1, B1 is formed 60 after series welding, stacking, lamination, terminal box installation, solidification and test-based examination respectively
Solar double-glass assemblies, the quantity of 60 solar double-glass assemblies are 5.
Electric performance test has been carried out to 60 obtained solar double-glass assemblies, test method refers to national standard (IEC60904-1-2),
And 60 kilowatt hour light decay test, test method refer to national standard (IEC61215), test result is as follows:
The test result of 1 60 solar double-glass assemblies of table
Known to the above test result: the slice battery obtained by method of the invention, it can be with hoisting power close to 5 watts.
Another light decay reduces.
Slice battery A2, B2 is formed 72 after series welding, stacking, lamination, terminal box installation, solidification and test-based examination respectively
Solar double-glass assemblies, the quantity of 72 solar double-glass assemblies are 5.
Electric performance test has been carried out to 72 obtained solar double-glass assemblies, test method refers to national standard (IEC60904-1-2),
And 60 kilowatt hour light decay test, test method refer to national standard (IEC61215), test result is as follows:
The test result of 2 72 solar double-glass assemblies of table
Known to the above test result: the slice battery obtained by method of the invention, it can be 2 watts with hoisting power.Another light
Decay small.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method for being sliced battery, which comprises the following steps:
After the scribing of full wafer battery laser, sliver, multiple independent sub- cell pieces are obtained；The sub- cell piece has at least one
The plane of disruption；
Thermal oxidation is carried out to the plane of disruption；
The thermal oxidation includes:
By the sub- cell piece at 180 degrees Celsius to 230 degrees Celsius, under an oxygen-containing atmosphere, handle 20 to 60 minutes.
2. the preparation method of slice battery according to claim 1, which is characterized in that, will in the thermal oxidation
Multiple sub- cell pieces stack gradually stacking.
3. the preparation method of slice battery according to claim 1, which is characterized in that the oxygen-containing atmosphere is air gas
Atmosphere；The time of the thermal oxidation is 20 to 40 minutes.
4. the preparation method of slice battery according to claim 1, which is characterized in that the oxygen-containing atmosphere is argon gas and oxygen
The mixed atmosphere of gas.
5. the preparation method of slice battery according to claim 4, which is characterized in that the matter of argon gas in the mixed atmosphere
Measuring content is 92% to 98%, and the mass content of oxygen is 2% to 8%；The thermal oxidation time is 30 to 60 minutes.
6. the preparation method of slice battery according to claim 1, which is characterized in that the full wafer battery is HIT battery.
7. the preparation method of slice battery according to claim 6, which is characterized in that the HIT battery has transparent lead
Electroxidation nitride layer.
8. the preparation method of slice battery according to claim 1, which is characterized in that the full wafer battery is PERC electricity
Pond.
9. a kind of slice battery, which is characterized in that prepared using the described in any item methods of claim 1 to 8.
10. a kind of photovoltaic module, which is characterized in that including slice battery as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910294479.7A CN110071178A (en) | 2019-04-12 | 2019-04-12 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910294479.7A CN110071178A (en) | 2019-04-12 | 2019-04-12 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110071178A true CN110071178A (en) | 2019-07-30 |
Family
ID=67367671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910294479.7A Pending CN110071178A (en) | 2019-04-12 | 2019-04-12 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110071178A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN111403555A (en) * | 2020-03-27 | 2020-07-10 | 无锡先导智能装备股份有限公司 | Battery piece preparation process, battery piece preparation device and battery piece |
| CN111430506A (en) * | 2020-04-21 | 2020-07-17 | 天合光能股份有限公司 | Crystalline silicon solar cell and edge passivation method thereof |
| CN111816557A (en) * | 2020-07-20 | 2020-10-23 | 浙江晶科能源有限公司 | Solar cell cutting method, solar cell cutting equipment and photovoltaic module |
| CN112071955A (en) * | 2020-09-07 | 2020-12-11 | 晋能光伏技术有限责任公司 | Method for reducing scribing efficiency loss of solar cell piece |
| CN113013290A (en) * | 2021-02-20 | 2021-06-22 | 泰州隆基乐叶光伏科技有限公司 | Passivation method of sliced battery, sliced battery after passivation and battery assembly |
| CN113078237A (en) * | 2020-01-03 | 2021-07-06 | 环晟光伏(江苏)有限公司 | Oxidation method for producing laminated tile and half large-size silicon wafer battery |
| WO2021204330A1 (en) * | 2020-04-07 | 2021-10-14 | Meyer Burger (Germany) Gmbh | Production line for producing solar modules from divided solar cells |
| CN113571601A (en) * | 2021-07-23 | 2021-10-29 | 常州时创能源股份有限公司 | Method for improving yield of battery fragments |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126797A (en) * | 1997-06-30 | 1999-01-29 | Kanegafuchi Chem Ind Co Ltd | Manufacture of integrated solar cell |
| EP2102914A1 (en) * | 2007-01-09 | 2009-09-23 | LG Electronics Inc. | Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN105590982A (en) * | 2016-02-19 | 2016-05-18 | 安徽旭能光伏电力有限公司 | High-efficiency solar cell piece and thermal treatment technology |
| CN106129162A (en) * | 2016-07-29 | 2016-11-16 | 无锡嘉瑞光伏有限公司 | A kind of solar battery sheet and assembly and preparation technology thereof |
| CN106257625A (en) * | 2016-08-19 | 2016-12-28 | 横店集团东磁股份有限公司 | A kind of stack high-temperature annealing process |
| CN109216508A (en) * | 2018-11-16 | 2019-01-15 | 常州大学 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
-
2019
- 2019-04-12 CN CN201910294479.7A patent/CN110071178A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1126797A (en) * | 1997-06-30 | 1999-01-29 | Kanegafuchi Chem Ind Co Ltd | Manufacture of integrated solar cell |
| EP2102914A1 (en) * | 2007-01-09 | 2009-09-23 | LG Electronics Inc. | Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN105590982A (en) * | 2016-02-19 | 2016-05-18 | 安徽旭能光伏电力有限公司 | High-efficiency solar cell piece and thermal treatment technology |
| CN106129162A (en) * | 2016-07-29 | 2016-11-16 | 无锡嘉瑞光伏有限公司 | A kind of solar battery sheet and assembly and preparation technology thereof |
| CN106257625A (en) * | 2016-08-19 | 2016-12-28 | 横店集团东磁股份有限公司 | A kind of stack high-temperature annealing process |
| CN109216508A (en) * | 2018-11-16 | 2019-01-15 | 常州大学 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN113078237A (en) * | 2020-01-03 | 2021-07-06 | 环晟光伏(江苏)有限公司 | Oxidation method for producing laminated tile and half large-size silicon wafer battery |
| CN113078237B (en) * | 2020-01-03 | 2023-08-25 | 环晟光伏(江苏)有限公司 | Oxidation method for producing laminated tile and half large-size silicon wafer battery |
| CN111403555A (en) * | 2020-03-27 | 2020-07-10 | 无锡先导智能装备股份有限公司 | Battery piece preparation process, battery piece preparation device and battery piece |
| CN111403555B (en) * | 2020-03-27 | 2023-12-08 | 无锡先导智能装备股份有限公司 | Battery piece preparation process, battery piece preparation device and battery piece |
| WO2021204330A1 (en) * | 2020-04-07 | 2021-10-14 | Meyer Burger (Germany) Gmbh | Production line for producing solar modules from divided solar cells |
| CN111430506A (en) * | 2020-04-21 | 2020-07-17 | 天合光能股份有限公司 | Crystalline silicon solar cell and edge passivation method thereof |
| CN111816557A (en) * | 2020-07-20 | 2020-10-23 | 浙江晶科能源有限公司 | Solar cell cutting method, solar cell cutting equipment and photovoltaic module |
| CN112071955A (en) * | 2020-09-07 | 2020-12-11 | 晋能光伏技术有限责任公司 | Method for reducing scribing efficiency loss of solar cell piece |
| CN113013290A (en) * | 2021-02-20 | 2021-06-22 | 泰州隆基乐叶光伏科技有限公司 | Passivation method of sliced battery, sliced battery after passivation and battery assembly |
| CN113571601A (en) * | 2021-07-23 | 2021-10-29 | 常州时创能源股份有限公司 | Method for improving yield of battery fragments |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110071178A (en) | A kind of preparation method being sliced battery and slice battery and photovoltaic module | |
| Meier et al. | Amorphous solar cells, the micromorph concept and the role of VHF-GD deposition technique | |
| CN103928535A (en) | PID resistance crystalline silicon battery and preparation method thereof | |
| CN101834224A (en) | Silicon wafer rapid heat treatment phosphorus diffusion gettering technology for manufacture of solar cell | |
| CN104505427B (en) | Improve method and the device of crystal silicon solar cell sheet LID and PID | |
| Korevaar et al. | High efficiency CdTe cells using manufacturable window layers and CdTe thickness | |
| CN111430506A (en) | Crystalline silicon solar cell and edge passivation method thereof | |
| CN103632933A (en) | Boron diffusion method of N type silicon chip, crystalline silicon solar cell and manufacturing method of crystalline silicon solar cell | |
| CN111384210A (en) | High open voltage diffusion high sheet resistance process for PERC (permanent resistance resistor) overlapped SE (selective emitter current) | |
| JP5052309B2 (en) | Photovoltaic device and manufacturing method thereof | |
| CN105070787A (en) | Crystalline silicon solar cell and diffusion method therefor | |
| CN102796988B (en) | Method for preparing highly ordered CuInS2 epitaxial film by using a sputtering method | |
| CN108010985B (en) | Flexible thin-film solar cell and preparation method thereof | |
| US20120037201A1 (en) | Photovoltaic device with oxide layer | |
| CN109585606A (en) | It is a kind of reduce p-type solar battery photo attenuation sintering method and application | |
| CN103413867B (en) | The diffusion method of solaode, solaode and preparation method thereof | |
| Wang | Technology, Manufacturing and Grid Connection of Photovoltaic Solar Cells | |
| CN206098426U (en) | Be used for thin -film solar cell continuous annealer | |
| CN104465799A (en) | Crystalline silicon solar cell and preparation method thereof | |
| Condorelli et al. | High efficiency hetero-junction: from pilot line to industrial production | |
| Pern et al. | Improved photostability of NREL-developed EVA pottant formulations for PV module encapsulation | |
| CN105967220A (en) | Preparation method of high quality p-type cuprous oxide film | |
| CN104269466A (en) | Silicon wafer boron doping method | |
| CN104409526B (en) | A kind of efficient silica-base film multijunction solar cell based on tunnelling reflecting layer | |
| CN109728109B (en) | Crystalline silicon double-sided battery and heat treatment method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190730 |
|
| RJ01 | Rejection of invention patent application after publication |