CN109216508A - A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency - Google Patents
A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency Download PDFInfo
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- CN109216508A CN109216508A CN201811363985.9A CN201811363985A CN109216508A CN 109216508 A CN109216508 A CN 109216508A CN 201811363985 A CN201811363985 A CN 201811363985A CN 109216508 A CN109216508 A CN 109216508A
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- solar batteries
- crystal silicon
- silicon solar
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- 238000000034 method Methods 0.000 title claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 title claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract description 5
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 3
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 6
- 230000002401 inhibitory effect Effects 0.000 claims description 6
- 238000004886 process control Methods 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000003698 laser cutting Methods 0.000 abstract description 3
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000010792 warming Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 9
- 230000006735 deficit Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to technical field of solar batteries, are related to a kind of method that inhibition crystal silicon solar batteries laser cuts the reduction of half behind efficiency.After comprising the steps of: that solar battery laser cuts half, half battery is placed on chain type, in box or tubular heater；Then heating furnace is warming up to 150-500 DEG C, while being passed through oxygen and inert gas (nitrogen or argon gas etc.), and oxygen flow ratio is 5%-30%, handles cooled to room temperature in air after 10min-2h.Lead to the compound increasing of cut place electron-hole after crystal silicon solar batteries laser cutting, the loss of FF and Isc is caused, so as to cause the decline of crystal silicon solar batteries photoelectric conversion efficiency.The purpose of this method is the loss in order to effectively inhibit crystal silicon solar batteries to cut half behind efficiency.0.1% or more is promoted than untreated half cell photoelectric transfer efficiency by the processed half battery efficiency of this method.
Description
Technical field
The invention belongs to technical field of solar batteries, it is related to a kind of inhibition crystal silicon solar batteries laser and cuts half behind efficiency
Reduced method.
Background technique
Solar energy generation technology is the key areas of green energy resource development.The output power of solar components is improved in addition to mentioning
The photoelectric conversion efficiency of high solar battery, while also to reduce the loss in encapsulation process to the greatest extent.Solar cell module
Encapsulation can choose full wafer cell package and half cell package.Half battery component is advantageous in that compared to full wafer battery pack
Part, internal short circuit current halve, therefore the inside of half component is consumed and effectively dropped in same internal resistance
It is low.To increase the external output power of solar cell module.But in industrialized production, half battery is directly produced
Dramatically increasing in cost can be brought, the general mode for producing half battery is first to produce full wafer battery, uses and swashs after the completion of battery
Full wafer battery is uniformly cut into two panels along line of symmetry by light, then is packaged to be made into half battery and is cut half component.
During full wafer battery is cut into half using laser, laser locally melts cell piece along symmetry axis
Change, to achieve the purpose that for cell piece to be split into two halves.Therefore, laser very serious is caused in the section part of two panels battery
Damage, the damage from laser of section part become the complex centre of photo-generated carrier, therefore relative to before not being sliced, half battery
Photoelectric conversion efficiency reduces.
High energy laser can melt silicon wafer during laser cutting, and the silicon of thawing splashes out to be detached by pumping dirt device,
Form pit in situ, then with mechanical force along cut direction by cell piece dimidiation.Therefore the edge of half battery has two
The different damage of kind.Type of impairment I: the silicon that damage from laser area melts is recrystallized as solid.During this silicon atom without
The original perfect ordered arrangement state of method reduction, forms mechanical damage.Type of impairment II: breaking portion caused by mechanical force breaks
Face is concordant, forms dangling bonds on surface, becomes the compound center of electron-hole.
In the prior art in order to avoid laser cutting there are the problem of can directly produce half battery, but entire factory
Automation needs to be transformed again, and production capacity reduces half.The cutting-in of laser can also be reduced, that is, reduces the silicon wafer of laser fusing
Ratio, loss in efficiency slightly reduce, but effect is unobvious, in addition, cutting-in reduce after cell piece be difficult to break it is disconnected, it is easy to form edge
The fracture of other crystal orientation, and asymmetric dimidiation.
Summary of the invention
It is cut partly to solve solar battery laser in the prior art, the present invention provides a kind of suppressions
Cell piece is put by the method that combinations silicon solar cell laser cuts the reduction of half behind efficiency after solar battery laser cuts half
High temperature, which leads in oxygen atmosphere, to be handled, and the dislocation density on I surface of type of impairment, lattice defect can be due to again passing by high temperature mistake
Journey has significant alleviation；The dangling bonds on II surface of type of impairment first generate fine and close oxide layer, passivation in high-temperature oxygen condition
The defect center of interface.The defect entire lowering of section part after being handled with the method, band after effectively inhibiting cell piece to cut
The loss in efficiency come.Specific step is as follows:
(1), furnace temp under inert gas protection, is risen to 150-500 DEG C, maintains furnace temperature to stablize and is used as standby temperature
Degree.
When temperature is lower than 150 DEG C, section is difficult to form thermal oxide layer is passivated type of impairment I again, in addition swashs in lattice
The defects of atom caused by light misplaces also rearranges without enough heat powers, can not effectively be passivated type of impairment II.But it is warm
Degree can not be excessively high, higher than 500 DEG C after will cause battery surface passivation layer passivation effect be deteriorated, electrode also easily aoxidizes, right
In HIT battery, treatment temperature is even not above 250 degree.Therefore, the method for the present invention is heat-treated using 150-500 DEG C.
Wherein, the inert gas is nitrogen, argon gas.
(2), the half cell piece after cutting is gathered and is placed on bracket, is sent into heating furnace, guarantee that cutting section can
With with atmosphere in furnace, shut fire door.
The half cell piece are as follows: N-PERT half cell piece, N-TOPCon half cell piece or HIT half cell piece；
The bracket is quartz holder, SiC bracket or stainless steel stent.
(3), it is passed through oxygen to be handled, oxygen flow ratio 5%-30%；Handle time 10min-2h.
Oxygen flow is lower than 5%, and the time can not form fine and close and sufficiently thick thermal oxide layer lower than 10min, can not also make
Annealed zone lattice defect effectively restores.But flow be higher than 30% after, oxygen be it is excessive, will cause gas waste increase
Economic cost.As long as lattice defect is effectively restored, oxide layer is fine and close enough, for more time to process results just without apparent
It influences, by experiment we have found that 2h is the upper limit for handling the time.
(4), quartz holder is taken out together with cell piece after the completion of handling, is cooled to room temperature.
The type of cooling is that natural cooling or process control are cooling.
The utility model has the advantages that
The method of the present invention simple process, effect are obvious；Requirement to equipment is low, and common annealing furnace, band oven, batch-type furnace are all
It can complete heat treatment of the invention.
After solar battery laser is cut half by the method for the present invention, cell piece is put into high temperature and is led in oxygen atmosphere
Reason, the dislocation density on I surface of type of impairment, lattice defect can have significant alleviation due to again passing by pyroprocess；Type of impairment
The dangling bonds on II surface first generate fine and close oxide layer in high-temperature oxygen condition, have been passivated the defect center of interface.Use this
The defect entire lowering of section part, bring loss in efficiency after effectively inhibiting cell piece to cut after method processing.
Detailed description of the invention
Fig. 1 is the cutting process that battery laser cuts half, cell piece fracture process and section type of impairment figure.
Fig. 2 is the photoelectric conversion efficiency figure of battery after embodiment 1-3 processing.
Specific embodiment
Embodiment 1
(1), in N2Under gas shield, furnace temp rises to 300 DEG C, maintains furnace temperature to stablize and is used as standby temperature.
(2), N-PERT half battery after cutting is gathered and is placed on quartz holder, is sent into heating furnace, guarantee cutting
Section can shut fire door with atmosphere in furnace.
(3), it is passed through oxygen, oxygen flow is than 10%；Handle time 10min.
(4), quartz holder is taken out together with cell piece after the completion of handling, cooled to room temperature.
The photoelectric conversion efficiency of N-PERT battery is than improving 0.1% before processing after processing, as shown in Figure 2.
Embodiment 2
(1), in N2Under gas shield, furnace temp maintains furnace temperature to stablize and is used as standby temperature to 400 DEG C.
(2), the N-TOPCon half cell piece after cutting is gathered and is placed on quartz holder, is sent into heating furnace, protected
Card cutting section can shut fire door with atmosphere in furnace.
(3), it is passed through oxygen, oxygen flow is than 10%；Handle time 30min.
(4), quartz holder is taken out together with cell piece after the completion of handling, cooled to room temperature.
The photoelectric conversion efficiency of N-TOPCon battery is than improving 0.15% before processing after processing, as shown in Figure 2.
Embodiment 3
(1), in N2Under gas shield, furnace temp rises to 150 DEG C, maintains furnace temperature to stablize and is used as standby temperature.
(2), the HIT half cell piece after cutting is gathered and is placed on quartz holder, is sent into heating furnace, guarantee cutting
Section can shut fire door with atmosphere in furnace.
(3), it is passed through oxygen, oxygen flow is than 10%；Handle time 20min.
(4), quartz holder is taken out together with cell piece after the completion of handling, cooled to room temperature.
The photoelectric conversion efficiency of HIT battery is than improving 0.06% before processing after processing, as shown in Figure 2.
Claims (4)
1. a kind of method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency, it is characterised in that: the method step
It is as follows:
(1), furnace temp under inert gas protection, is risen to 150-500 DEG C, maintains furnace temperature to stablize and is used as standby temperature；
(2), the half cell piece after laser being cut half, which gathers, to be placed on bracket, is sent into heating furnace, guarantees that cutting section can
With with atmosphere in furnace, shut fire door；
(3), it is passed through oxygen to be handled, oxygen flow ratio 5%-30%；Handle time 10min-2h；
(4), bracket is taken out together with cell piece after the completion of handling, is cooled to room temperature.
2. the method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency as described in claim 1, it is characterised in that:
Inert gas described in step (1) is nitrogen, argon gas.
3. the method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency as described in claim 1, it is characterised in that:
Half cell piece described in step (2) are as follows: N-PERT half cell piece, N-TOPCon half cell piece or HIT half cell piece；
The bracket is quartz holder, SiC bracket or stainless steel stent.
4. the method for inhibiting crystal silicon solar batteries laser to cut the reduction of half behind efficiency as described in claim 1, it is characterised in that:
The type of cooling described in step (4) is that natural cooling or process control are cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811363985.9A CN109216508A (en) | 2018-11-16 | 2018-11-16 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811363985.9A CN109216508A (en) | 2018-11-16 | 2018-11-16 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
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|---|---|
| CN109216508A true CN109216508A (en) | 2019-01-15 |
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| CN201811363985.9A Pending CN109216508A (en) | 2018-11-16 | 2018-11-16 | A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034205A (en) * | 2019-04-19 | 2019-07-19 | 协鑫集成科技股份有限公司 | A kind of photovoltaic cell and the method that photovoltaic cell is isolated from multi-layer crystal chip |
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
| CN110137271A (en) * | 2019-04-25 | 2019-08-16 | 泰州隆基乐叶光伏科技有限公司 | The passivating method and device and slice battery and photovoltaic module of slice battery |
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN110854042A (en) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | Solar cell splitting method and system |
| CN111081819A (en) * | 2019-12-31 | 2020-04-28 | 通威太阳能（合肥）有限公司 | Damage-preventing cutting method and device for solar cell |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
| CN113013266A (en) * | 2020-08-19 | 2021-06-22 | 友达光电股份有限公司 | Solar cell and method for manufacturing same |
| CN113421950A (en) * | 2021-06-21 | 2021-09-21 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
| JP7058312B2 (en) | 2020-08-21 | 2022-04-21 | 晶科▲緑▼能（上海）管理有限公司 | Cutting and passivation methods for silicon-based semiconductor devices, and silicon-based semiconductor devices |
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2018
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| CN1386081A (en) * | 2000-07-26 | 2002-12-18 | Ase美国公司 | Laser cutting of semiconductor materials |
| CN105226124A (en) * | 2015-11-03 | 2016-01-06 | 张家港其辰光伏科技有限公司 | Solar module and preparation method thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
| CN110034205A (en) * | 2019-04-19 | 2019-07-19 | 协鑫集成科技股份有限公司 | A kind of photovoltaic cell and the method that photovoltaic cell is isolated from multi-layer crystal chip |
| CN110137271A (en) * | 2019-04-25 | 2019-08-16 | 泰州隆基乐叶光伏科技有限公司 | The passivating method and device and slice battery and photovoltaic module of slice battery |
| CN110767773A (en) * | 2019-09-29 | 2020-02-07 | 南通苏民新能源科技有限公司 | Method for improving photoelectric conversion efficiency of half solar cell module |
| CN110854042A (en) * | 2019-11-12 | 2020-02-28 | 苏州迈为科技股份有限公司 | Solar cell splitting method and system |
| CN111081819A (en) * | 2019-12-31 | 2020-04-28 | 通威太阳能（合肥）有限公司 | Damage-preventing cutting method and device for solar cell |
| CN111081819B (en) * | 2019-12-31 | 2021-06-08 | 通威太阳能（合肥）有限公司 | Damage-preventing cutting method and device for solar cell |
| CN111326606A (en) * | 2020-03-11 | 2020-06-23 | 苏州光汇新能源科技有限公司 | N-type slicing solar cell structure and manufacturing method thereof |
| CN113013266A (en) * | 2020-08-19 | 2021-06-22 | 友达光电股份有限公司 | Solar cell and method for manufacturing same |
| JP7058312B2 (en) | 2020-08-21 | 2022-04-21 | 晶科▲緑▼能（上海）管理有限公司 | Cutting and passivation methods for silicon-based semiconductor devices, and silicon-based semiconductor devices |
| CN113421950A (en) * | 2021-06-21 | 2021-09-21 | 安徽华晟新能源科技有限公司 | Method for manufacturing solar cell |
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