CN110854042A - Solar cell splitting method and system - Google Patents

Solar cell splitting method and system Download PDF

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Publication number
CN110854042A
CN110854042A CN201911099854.9A CN201911099854A CN110854042A CN 110854042 A CN110854042 A CN 110854042A CN 201911099854 A CN201911099854 A CN 201911099854A CN 110854042 A CN110854042 A CN 110854042A
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silicon wafer
scribing
crystal silicon
solar cell
module
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房开乐
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Suzhou Maxwell Technologies Co Ltd
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Suzhou Maxwell Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a solar cell splitting method and a solar cell splitting system, wherein the method comprises the following steps: scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing; the crystal silicon wafer is a crystal silicon wafer with a length, and the scribing points comprise laser scribing points; and heating and cooling the crystal silicon wafer after the point etching along the linear direction by taking the point etching as a starting point until the crystal silicon wafer reaches the edge of the crystal silicon wafer to obtain a plurality of solar cell strips, wherein the heating is carried out before the cooling. The invention solves the technical problem that the efficiency of the battery assembly is influenced by great damage to the battery piece in the prior art.

Description

Solar cell splitting method and system
Technical Field
The invention relates to the technical field of solar cell splitting, in particular to a solar cell splitting method and system.
Background
With the increasing change of domestic policies and markets, the flat price internet access of photovoltaic power generation becomes an inevitable development trend, and a high-power and high-efficiency photovoltaic power generation module can effectively reduce the cost of a module end or a system end due to large generating capacity of the photovoltaic power generation module in unit area, so that the photovoltaic power generation module is greatly supported and researched.
At present, in the production of solar cells, under the condition of a certain cell conversion efficiency, a method of transversely cutting the cells in half and then serially welding is commonly used to improve the power generation power of the module. The battery piece is cut into halves by two procedures, namely, the middle of the battery piece is transversely scribed by laser, the scribing width and depth are accurately controlled, and the battery piece with the scribed lines is split and broken along the scribing direction.
The mode of firstly scribing and then mechanically cutting the split sheet in the prior art has the technical problem that the damage to the battery sheet is large, and the efficiency of the battery assembly is influenced.
Disclosure of Invention
In view of the above, the present invention provides a solar cell splitting method and system, so as to alleviate the technical problem in the prior art that the damage to a cell is large and the efficiency of a cell module is affected.
In a first aspect, an embodiment of the present invention provides a solar cell splitting method, including: scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing; the crystal silicon wafer is a crystal silicon wafer with a length, and the scribing points comprise laser scribing points; and heating and cooling the crystal silicon wafer after the notch point along the linear direction by taking the notch point as a starting point until the crystal silicon wafer reaches the edge of the crystal silicon wafer to obtain a plurality of solar cell strips, wherein the heating is carried out before the cooling. The heating temperature in the invention is 100-1000 ℃, and the cooling mode is deionized water cooling.
Further, the method for scribing the surface of the crystal silicon wafer comprises the following steps: symmetrically dotting at the edges of two opposite sides of the crystal silicon wafer.
Furthermore, the length of the point engraved on the surface of the silicon wafer is 10-20 micrometers, and the depth is 75-80 micrometers.
Further, the crystalline silicon wafer is an HJT cell or a PERC cell, the crystalline silicon wafer of the present invention is not limited thereto, and other types such as perovskite solar cells are also within the scope of the present invention.
Furthermore, after the surface of the crystal silicon wafer is scribed to obtain the crystal silicon wafer after scribing, the method further comprises the following steps: and applying a conductive adhesive bonding material on the upper surface of the crystal silicon wafer after the scribing.
Further, before the surface of the crystal silicon wafer is scribed and the crystal silicon wafer after scribing is obtained, the method further comprises the following steps: a conductive adhesive bonding material is applied to the upper surface of the crystalline silicon wafer.
Further, after the silicon wafer after the scribing point is heated and cooled along a straight line direction to the edge of the silicon wafer by taking the scribing point as a starting point on the surface of the silicon wafer after the scribing point, and a plurality of solar battery strips are obtained, the method further comprises the following steps: arranging the plurality of solar cell strips in a line, wherein long sides of adjacent solar cell strips overlap with the conductive adhesive bonding material disposed therebetween; curing the conductive adhesive bonding material to electrically connect adjacent overlapping portions of the plurality of solar cell strips together in series.
In a second aspect, an embodiment of the present invention further provides a solar cell splitting system, including: the device comprises a scribing module, a heating module and a cooling module, wherein the scribing module is used for scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing points; the crystal silicon wafer is a crystal silicon wafer with a length, and the scribing points comprise laser scribing points; the heating module is used for heating the crystal silicon wafer after the scribing point along the linear direction by taking the scribing point as a starting point on the surface of the crystal silicon wafer after the scribing point; and the cooling module is used for cooling the crystal silicon wafer after the crystal silicon wafer is heated by the heating module until the edge of the crystal silicon wafer is reached, so that a plurality of solar battery strips are obtained.
Further, the system also includes; and the adhesive adding module is used for applying a conductive adhesive bonding material on the upper surface of the crystalline silicon wafer after the dotting.
Furthermore, the length of the point engraved on the surface of the wafer by the point engraving module is 10-20 micrometers, and the depth of the point engraved on the surface of the wafer is 75-80 micrometers.
The invention provides a solar cell splitting method and a solar cell splitting system, wherein the method comprises the following steps: scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing; and heating the crystal silicon wafer after the point marking along the linear direction by taking the point marking as a starting point on the surface of the crystal silicon wafer after the point marking, and then cooling the crystal silicon wafer along the linear heating direction until the crystal silicon wafer reaches the edge of the crystal silicon wafer to obtain a plurality of solar cell strips. According to the invention, points are first engraved, heating and cooling are then carried out, and the silicon wafer is automatically cracked by using the principle of thermal expansion and cold contraction, so that the damage of mechanical stress to the surface of the silicon wafer is avoided, and the technical problem that the damage to the battery piece is large and the efficiency of a battery assembly is influenced in the prior art is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a solar cell splitting method according to an embodiment of the present invention;
fig. 2 is a schematic view of a solar cell splitting system according to a second embodiment of the present invention;
fig. 3 is a schematic diagram of a solar cell splitting system according to a third embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
in the prior art, the damage to the surface of the crystalline silicon wafer is large due to the fact that the crystalline silicon wafer is scribed on the surface of the crystalline silicon wafer and then is cracked by mechanical stress to form the cell strips.
Fig. 1 is a flowchart of a solar cell splitting method according to an embodiment of the present invention, and as shown in fig. 1, the method specifically includes the following steps:
and S102, dotting on the surface of the crystalline silicon wafer to obtain the crystalline silicon wafer after the dotting.
Wherein the crystal silicon wafer is a crystal silicon wafer with a length.
Optionally, the shape of the wafer is square. Preferably, in the embodiment of the present invention, the side of the silicon wafer is 158 mm, and the thickness is 150 μm.
Optionally, the scribing in this step includes laser scribing.
And step S104, heating and cooling the silicon wafer after the point engraving along the linear direction by taking the point engraving as a starting point until the silicon wafer reaches the edge of the silicon wafer, and obtaining a plurality of solar cell strips.
In the embodiment of the invention, the heating and cooling of the silicon wafer are performed almost simultaneously, wherein the heating is performed before the cooling.
Optionally, in the embodiment of the invention, the surface of the silicon wafer is heated by laser, and the heating temperature is 100-1000 ℃; the cooling mode is deionized water cooling.
The invention provides a solar cell splitting method, which comprises the following steps: scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing; and heating the crystal silicon wafer after the point marking along the linear direction by taking the point marking as a starting point on the surface of the crystal silicon wafer after the point marking, and then cooling the crystal silicon wafer along the linear heating direction until the crystal silicon wafer reaches the edge of the crystal silicon wafer to obtain a plurality of solar cell strips. According to the invention, points are first engraved, heating and cooling are then carried out, and the silicon wafer is automatically cracked by using the principle of thermal expansion and cold contraction, so that the damage of mechanical stress to the surface of the electric silicon wafer is avoided, and the technical problem that the damage to the battery piece is large and the efficiency of a battery assembly is influenced in the prior art is solved. The present invention belongs to micro loss.
Preferably, the points are symmetrically carved on the edges of two opposite sides of the wafer.
Preferably, in the embodiment of the invention, the length of the point engraved on the surface of the crystalline silicon wafer in the step S102 is 10 to 20 micrometers, and the depth is 75 to 80 micrometers.
Alternatively, in the embodiment of the present invention, the used crystalline silicon wafer may be an HJT cell wafer or a PERC cell wafer.
In an optional implementation manner of the embodiment of the present invention, before step S102, the method further includes the following steps: a conductive adhesive bonding material is applied to the upper surface of the crystalline silicon wafer.
In an optional implementation manner of the embodiment of the present invention, after step S102, the method provided in the embodiment of the present invention further includes the following steps:
and applying a conductive adhesive bonding material on the upper surface of the crystalline silicon wafer after the scribing.
That is, in the embodiment of the present invention, the step of applying the conductive adhesive bonding material on the upper surface of the silicon wafer may be performed before step S102 or may be performed after step S102.
And after step S104, the method provided in the embodiment of the present invention further includes:
arranging a plurality of solar cell strips in a line, wherein long sides of adjacent solar cell strips overlap with a conductive adhesive bonding material disposed therebetween;
the conductive adhesive bonding material is cured to electrically connect adjacent overlapping portions of the plurality of solar cell strips together in series.
As can be seen from the above description, the embodiment of the present invention provides a solar cell splitting method, which includes performing a scribing operation on an upper surface of a crystalline silicon wafer by using laser, then linearly heating the crystalline silicon wafer by using laser with the scribed point as a starting point, cooling the crystalline silicon wafer by using deionized water, and automatically splitting the crystalline silicon wafer by using a thermal expansion and cold contraction principle to complete the splitting operation, so that damage to the surface of the crystalline silicon wafer by mechanical stress in the prior art can be avoided, and the efficiency of the solar cell can be improved.
For example, in the embodiment of the present invention, the efficiency comparison results of the solar cell obtained when the crystalline silicon wafer is linearly heated by using the test parameters shown in table 1 and the splitting method using the prior art are as follows:
TABLE 1
Figure BDA0002269969610000061
The efficiency of the battery plate after the battery plate is split is reduced by 37.59-38.31% measured by adopting the splitting mode in the prior art, and the efficiency of the battery plate cooling module prepared by the invention is reduced by 34.62-34.87%. Therefore, the solar cell obtained by the solar cell splitting method provided by the invention has higher efficiency than the solar cell obtained by the splitting method in the prior art.
Example two:
fig. 2 is a schematic diagram of a solar cell splitting system provided in accordance with an embodiment of the present invention, including: a scribing module 10, a heating module 20 and a cooling module 30.
Specifically, the scribing module 10 is configured to scribe points on the surface of the crystalline silicon wafer to obtain the crystalline silicon wafer after scribing; the crystal silicon wafer is a crystal silicon wafer with a length, and the scribing points comprise laser scribing points.
Preferably, the length of the dot engraved by the dot engraving module 10 is 10 to 20 micrometers, and the depth is 75 to 80 micrometers.
And the heating module 20 is used for heating the crystal silicon wafer after the point marking along the straight line direction by taking the point marking as a starting point on the surface of the crystal silicon wafer after the point marking to obtain the heated crystal silicon wafer.
And the cooling module 30 is used for cooling the crystalline silicon wafer after the crystalline silicon wafer is heated by the heating module until the edge of the crystalline silicon wafer is reached, so that a plurality of solar cell strips are obtained.
The invention provides a solar cell splitting system, which comprises: scribing points on the surface of the crystal silicon wafer through the scribing module to obtain the crystal silicon wafer after scribing points; heating the surface of the crystal silicon wafer after the point marking by the heating module along the linear direction by taking the point marking as a starting point; and finally, the cooling module is used for cooling the crystalline silicon wafer after the crystalline silicon wafer is heated by the heating module until the edge of the crystalline silicon wafer is reached, so that a plurality of solar battery strips are obtained. According to the system provided by the embodiment of the invention, points are first engraved, heating and cooling are then carried out, and the silicon wafer is automatically cracked by using the principle of expansion with heat and contraction with cold, so that the damage of mechanical stress to the surface of the electric silicon wafer is avoided, and the technical problem that the damage to the battery piece is large and the efficiency of a battery assembly is influenced in the prior art is solved. The technical effect of improving the efficiency of the solar cell is achieved. The present invention belongs to micro loss.
EXAMPLE III
Fig. 3 is a schematic diagram of another solar cell splitting system provided according to an embodiment of the present invention, which includes the dotting module 10, the heating module 20 and the cooling module 30 in addition to those of the second embodiment; and the adhesive adding module 40 is used for applying conductive adhesive bonding material on the upper surface of the crystalline silicon wafer after the dotting.
Optionally, as shown in fig. 3, another solar cell splitting system provided in the embodiment of the present invention further includes: an adhesive module 50 for:
arranging a plurality of solar cell strips in a line, wherein long sides of adjacent solar cell strips overlap with a conductive adhesive bonding material disposed therebetween;
the conductive adhesive bonding material is cured to electrically connect adjacent overlapping portions of the plurality of solar cell strips together in series.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A solar cell splitting method is characterized by comprising the following steps:
scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing; the crystal silicon wafer is a crystal silicon wafer with a length, and the scribing points comprise laser scribing points;
heating and cooling the crystal silicon wafer after the notch point along the linear direction by taking the notch point as a starting point until the crystal silicon wafer reaches the edge of the crystal silicon wafer to obtain a plurality of solar battery strips; wherein heating precedes cooling.
2. The method of claim 1, wherein the scribing a point on the surface of the wafer comprises: symmetrically dotting at the edges of two opposite sides of the crystal silicon wafer.
3. The method of claim 2, wherein the surface of the wafer is etched to a point length of 10 to 20 microns and a depth of 75 to 80 microns.
4. The method of claim 1, wherein the wafer is an HJT cell or a PERC cell.
5. The method of claim 1, wherein after the surface of the silicon wafer is patterned to obtain the patterned silicon wafer after the patterning, the method further comprises:
and applying a conductive adhesive bonding material on the upper surface of the crystal silicon wafer after the scribing.
6. The method of claim 1, wherein before the surface of the silicon wafer is scribed to obtain the silicon wafer after scribing, the method further comprises:
a conductive adhesive bonding material is applied to the upper surface of the crystalline silicon wafer.
7. The method according to any one of claims 5 or 6, wherein after the silicon wafer after the scribing is heated and cooled along a straight line direction to the edge of the silicon wafer from the scribing as a starting point on the surface of the silicon wafer after the scribing, the method further comprises:
arranging the plurality of solar cell strips in a line, wherein long sides of adjacent solar cell strips overlap with the conductive adhesive bonding material disposed therebetween;
curing the conductive adhesive bonding material to electrically connect adjacent overlapping portions of the plurality of solar cell strips together in series.
8. A solar cell splitting system, comprising: a scribing module, a heating module and a cooling module, wherein,
the scribing module is used for scribing points on the surface of the crystal silicon wafer to obtain the crystal silicon wafer after scribing points; the crystal silicon wafer is a crystal silicon wafer with a length, and the scribing points comprise laser scribing points;
the heating module is used for heating the crystal silicon wafer after the scribing point along the linear direction by taking the scribing point as a starting point on the surface of the crystal silicon wafer after the scribing point;
and the cooling module is used for cooling the crystal silicon wafer after the crystal silicon wafer is heated by the heating module until the edge of the crystal silicon wafer is reached, so that a plurality of solar battery strips are obtained.
9. The system of claim 8, further comprising; and the adhesive adding module is used for applying a conductive adhesive bonding material on the upper surface of the crystalline silicon wafer after the dotting.
10. The system of claim 9, wherein the scribing module scribes points on the surface of the wafer having a length of 10 to 20 micrometers and a depth of 75 to 80 micrometers.
CN201911099854.9A 2019-11-12 2019-11-12 Solar cell splitting method and system Pending CN110854042A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111933746A (en) * 2020-07-10 2020-11-13 深圳光远智能装备股份有限公司 Nondestructive laser nondestructive scribing process for solar cell

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1408498A (en) * 2001-09-29 2003-04-09 三星电子株式会社 Method for cutting non-metal base
CN101018746A (en) * 2004-03-22 2007-08-15 弗劳恩霍夫应用研究促进协会 Method for laser-induced thermal separation of plate glass
JP2008246808A (en) * 2007-03-30 2008-10-16 Japan Steel Works Ltd:The Processing method for workpiece made of high brittle non-metal material and device thereof
CN102569543A (en) * 2010-12-30 2012-07-11 比亚迪股份有限公司 Manufacture method of light emitting diode chips
CN102686354A (en) * 2009-03-20 2012-09-19 康宁股份有限公司 Precision laser scoring
CN103586587A (en) * 2013-10-18 2014-02-19 苏州斯尔特微电子有限公司 Laser cutting method of silicon wafers
CN104972226A (en) * 2014-04-10 2015-10-14 大族激光科技产业集团股份有限公司 Double-head laser machining device and machining method
CN106489211A (en) * 2014-05-27 2017-03-08 太阳能公司 Imbrication formula solar module
CN107437532A (en) * 2016-05-26 2017-12-05 大族激光科技产业集团股份有限公司 A kind of Ultra-Violet Laser surface cutting method of LED wafer
CN109148317A (en) * 2017-06-15 2019-01-04 沈阳硅基科技有限公司 The board of soi wafer is prepared for laser sliver technology
CN109216508A (en) * 2018-11-16 2019-01-15 常州大学 A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency
CN109378360A (en) * 2018-09-29 2019-02-22 苏州迈为科技股份有限公司 A kind of imbrication component manufacturing line and production technology
CN209169153U (en) * 2018-11-05 2019-07-26 盐城阿特斯协鑫阳光电力科技有限公司 Laser slotting patterning, cell piece and solar photovoltaic assembly

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1408498A (en) * 2001-09-29 2003-04-09 三星电子株式会社 Method for cutting non-metal base
CN101018746A (en) * 2004-03-22 2007-08-15 弗劳恩霍夫应用研究促进协会 Method for laser-induced thermal separation of plate glass
JP2008246808A (en) * 2007-03-30 2008-10-16 Japan Steel Works Ltd:The Processing method for workpiece made of high brittle non-metal material and device thereof
CN102686354A (en) * 2009-03-20 2012-09-19 康宁股份有限公司 Precision laser scoring
CN102569543A (en) * 2010-12-30 2012-07-11 比亚迪股份有限公司 Manufacture method of light emitting diode chips
CN103586587A (en) * 2013-10-18 2014-02-19 苏州斯尔特微电子有限公司 Laser cutting method of silicon wafers
CN104972226A (en) * 2014-04-10 2015-10-14 大族激光科技产业集团股份有限公司 Double-head laser machining device and machining method
CN106489211A (en) * 2014-05-27 2017-03-08 太阳能公司 Imbrication formula solar module
CN107437532A (en) * 2016-05-26 2017-12-05 大族激光科技产业集团股份有限公司 A kind of Ultra-Violet Laser surface cutting method of LED wafer
CN109148317A (en) * 2017-06-15 2019-01-04 沈阳硅基科技有限公司 The board of soi wafer is prepared for laser sliver technology
CN109378360A (en) * 2018-09-29 2019-02-22 苏州迈为科技股份有限公司 A kind of imbrication component manufacturing line and production technology
CN209169153U (en) * 2018-11-05 2019-07-26 盐城阿特斯协鑫阳光电力科技有限公司 Laser slotting patterning, cell piece and solar photovoltaic assembly
CN109216508A (en) * 2018-11-16 2019-01-15 常州大学 A method of inhibit crystal silicon solar batteries laser to cut the reduction of half behind efficiency

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111933746A (en) * 2020-07-10 2020-11-13 深圳光远智能装备股份有限公司 Nondestructive laser nondestructive scribing process for solar cell

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Application publication date: 20200228