CN109713084A - A kind of method of sheet resistance uniformity in improvement solar battery diffusion technology - Google Patents
A kind of method of sheet resistance uniformity in improvement solar battery diffusion technology Download PDFInfo
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- CN109713084A CN109713084A CN201811653579.6A CN201811653579A CN109713084A CN 109713084 A CN109713084 A CN 109713084A CN 201811653579 A CN201811653579 A CN 201811653579A CN 109713084 A CN109713084 A CN 109713084A
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Abstract
The present invention discloses a kind of method for improving sheet resistance uniformity in solar battery diffusion technology, passes through the thickness for reinforcing pre-oxidation step raising silicon dioxide film in diffusion technique in technique, while increasing second step and promoting and be passed through POCl3It is uniform to improve sheet resistance in solar battery sheet.Since diffusion velocity will be slower than silicon to P elements in silica, the thickness for improving silicon dioxide film can reduce propulsion depth of the phosphorus in silicon, diffuse into phosphorus must more evenly inside silicon wafer, while increasing second step and promoting and be passed through POCl3It is uneven that sheet resistance in piece caused by the phosphorus source because of caused by turbulence in diffusion furnace is unevenly distributed can be made up.The sheet resistance uniformity for the solar battery sheet produced using method of the invention is more preferable, and PN junction is more smooth and junction depth is more shallow, and the transfer efficiency of solar battery can be improved to a certain extent.
Description
Technical field
The present invention relates to a kind of methods of sheet resistance uniformity in improvement solar battery diffusion technology, belong to solar battery
Processing technique field.
Background technique
Influence of the drawback brought by traditional thermal power generation to environment has been to be concerned by more and more people, thus to green energy
The demand in source has driven the rapid development of photovoltaic industry, and with the manufacturing technology of solar battery it is continuous it is mature with it is complete
Kind, the use of new technology and new process allows the cost of photovoltaic power generation constantly to reduce, and keeps it more excellent compared with conventional electric power generation field
Gesture.
The manufacturing process of solar battery sheet is complicated, and in simple terms, the production process of solar battery includes: making herbs into wool, expands
Scattered, etching, plated film and silk-screen printing.The uniformity and junction depth of the standby PN junction of diffusion directly affect entire solar battery electricity
The quality of performance, therefore, diffusion technique are a most important rings for entire manufacture of solar cells technique.Currently, common expand
The diffusion furnace for dissipating system knot is stopped pipe type diffusion furnace.Since the airtightness of stopped pipe type diffusion furnace is poor, lead to the air-flow being passed through in furnace
Will form turbulent flow, being unevenly distributed in silicon chip surface is directly led to keep the sheet resistance uniformity of silicon wafer poor so as to cause phosphorus source
Inefficient ratio of solar battery is caused to increase.Therefore, it is necessary to develop one kind can also complete preferably in common stopped pipe type diffusion furnace
The diffusion technique of diffusion effect.
Summary of the invention
Goal of the invention: aiming at the problems existing in the prior art with deficiency, the present invention provides a kind of improvement solar battery
The method of sheet resistance uniformity in diffusion technique improves the thickness of silicon dioxide film by reinforcing pre-oxidation step in diffusion technique,
Make the flatness of PN junction more preferably and junction depth is more shallow, the corresponding transfer efficiency for improving solar battery.
Technical solution:
A kind of method improving sheet resistance uniformity in solar battery diffusion technology proposed by the present invention, including walk as follows
It is rapid:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 10- of 2000-3000sccm at 750-800 DEG C
19min；
(2) be passed through into furnace 1000-2000sccm's and mixing POCl3Nitrogen, while being passed through 1000-1500sccm's
The nitrogen of oxygen and 15000-20000sccm, diffusion furnace temperature are 750-800 DEG C, time 15-20min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830-850 DEG C in 10-15min,
Make the P elements of silicon chip surface to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 500-1000sccm's and mixing POCl3Nitrogen, while being passed through 1500-2000sccm
Oxygen and 15000-20000sccm nitrogen, keep diffusion furnace in-furnace temperature be 840-860 DEG C, reaction time 10-
14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2000-3000sccm and the nitrogen of 15000-20000sccm, ventilates
Time is 10-15min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 15000-20000sccm, by silicon wafer from expansion
Dissipate that furnace takes out and to survey its sheet resistance stand-by.
Further restriction technical solution of the invention, sheet resistance uniformity in improvement solar battery diffusion technology above-mentioned
Method, the POCl in the step (1) and step (4)3The volume ratio of gas and nitrogen is 1-3:6.
The method of sheet resistance uniformity, includes the following steps: in improvement solar battery diffusion technology above-mentioned
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 17min of 2500sccm at 780 DEG C；
(2) be passed through into furnace 1500sccm's and mixing POCl3Nitrogen, while be passed through 1200sccm oxygen and
The nitrogen of 15000sccm, diffusion furnace temperature are 780 DEG C, time 18min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830 DEG C in 10min, make silicon wafer
The P elements on surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 800sccm's and mixing POCl3Nitrogen, while be passed through 2000sccm oxygen and
The nitrogen of 15000sccm, keeping the in-furnace temperature of diffusion furnace is 850 DEG C, reaction time 14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2500sccm and the nitrogen of 15000sccm, and duration of ventilation is
12min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 20000sccm, silicon wafer will be taken from diffusion furnace
Out and to survey its sheet resistance stand-by.
The method of sheet resistance uniformity, includes the following steps: in improvement solar battery diffusion technology above-mentioned
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 10min of 2000sccm at 750 DEG C；
(2) be passed through into furnace 1000sccm's and mixing POCl3Nitrogen, while be passed through 1000sccm oxygen and
The nitrogen of 15000sccm, diffusion furnace temperature are 750 DEG C, time 15min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830 DEG C in 10min, make silicon wafer
The P elements on surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 500sccm's and mixing POCl3Nitrogen, while be passed through 1500sccm oxygen and
The nitrogen of 15000sccm, keeping the in-furnace temperature of diffusion furnace is 840 DEG C, reaction time 10min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2000sccm and the nitrogen of 15000sccm, and duration of ventilation is
10min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 15000sccm, silicon wafer will be taken from diffusion furnace
Out and to survey its sheet resistance stand-by.
Further, the method above-mentioned for improving sheet resistance uniformity in solar battery diffusion technology, includes the following steps:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 15min of 3000sccm at 800 DEG C；
(2) be passed through into furnace 2000sccm's and mixing POCl3Nitrogen, while be passed through 1500sccm oxygen and
The nitrogen of 20000sccm, diffusion furnace temperature are 800 DEG C, time 20min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 850 DEG C in 15min, make silicon wafer
The P elements on surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 1000sccm's and mixing POCl3Nitrogen, while be passed through 2000sccm oxygen and
The nitrogen of 20000sccm, keeping the in-furnace temperature of diffusion furnace is 860 DEG C, reaction time 14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 3000sccm and the nitrogen of 20000sccm, and duration of ventilation is
15min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 20000sccm, silicon wafer will be taken from diffusion furnace
Out and to survey its sheet resistance stand-by.
The utility model has the advantages that the present invention improves the thickness of silicon dioxide film by reinforcing pre-oxidation step in diffusion technique, utilize
Diffusion velocity will be slower than silicon to P elements in silica, can reduce propulsion depth of the phosphorus in silicon, obtain phosphorus more evenly
It diffuses into inside silicon wafer, while the phosphorus caused by second step propulsion increase is passed through POCl3 and can make up because of turbulence in diffusion furnace
Source distribution unevenness keeps the sheet resistance for the solar battery sheet produced uniformly more preferable, thus keep the flatness of PN junction more preferable and junction depth more
Shallowly, the corresponding transfer efficiency for improving solar battery.
Solar battery diffusion technology of the invention improves common under the premise of not increasing equipment improved extra cost
Stopped pipe type diffusion furnace diffusion uniformity, i.e., by optimization silicon wafer diffusion after sheet resistance piece in uniformity prepare smooth PN
Knot, so as to effectively reduce abnormal piece and inefficient appearance during subsequent silk screen sintering.Therefore, it can effectively mention
The transfer efficiency of high solar battery.
Specific embodiment
Below with specific embodiment, the present invention is furture elucidated.
Embodiment 1
The present embodiment provides a kind of methods of sheet resistance uniformity in improvement solar battery diffusion technology, including walk as follows
It is rapid:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 17min of 2500sccm at 780 DEG C；
(2) be passed through into furnace 1500sccm's and mixing POCl3Nitrogen, while be passed through 1200sccm oxygen and
The nitrogen of 15000sccm, diffusion furnace temperature are 780 DEG C, time 18min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830 DEG C in 10min, make silicon wafer
The P elements on surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 800sccm's and mixing POCl3Nitrogen, while be passed through 2000sccm oxygen and
The nitrogen of 15000sccm, keeping the in-furnace temperature of diffusion furnace is 850 DEG C, reaction time 14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2500sccm and the nitrogen of 15000sccm, and duration of ventilation is
12min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 20000sccm, silicon wafer will be taken from diffusion furnace
Out and to survey its sheet resistance stand-by；
The wherein POCl in step (1) and step (4)3The volume ratio of gas and nitrogen is 1:6.
Table 1: the correlation data of prior art comparative example and embodiment.
Inhomogeneities calculation method is (maximum value-minimum value)/(sheet resistance average value in piece) * 100% in piece
Table 2: the unit for electrical property parameters of prior art comparative example and embodiment comparison.
As can be seen from the above data, 1 comparative example of table, five warm areas obtain inhomogeneities be 11% respectively, 12%, 10.6%,
9.0% and 13.5%, and five warm areas of the embodiment of the present invention are respectively 4.3%, 5.5%, 7.7%, 3.4% and 5.4%.
This illustrates that the present invention is significant to the uniform improvement of sheet resistance, and the efficiency of the embodiment after improvement is improved than comparative example
0.05%.
Embodiment 2
The present embodiment provides a kind of methods of sheet resistance uniformity in improvement solar battery diffusion technology, including walk as follows
It is rapid:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 10min of 2000sccm at 750 DEG C；
(2) be passed through into furnace 1000sccm's and mixing POCl3Nitrogen, while be passed through 1000sccm oxygen and
The nitrogen of 15000sccm, diffusion furnace temperature are 750 DEG C, time 15min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830 DEG C in 10min, make silicon wafer
The P elements on surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 500sccm's and mixing POCl3Nitrogen, while be passed through 1500sccm oxygen and
The nitrogen of 15000sccm, keeping the in-furnace temperature of diffusion furnace is 840 DEG C, reaction time 10min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2000sccm and the nitrogen of 15000sccm, and duration of ventilation is
10min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 15000sccm, silicon wafer will be taken from diffusion furnace
Out and to survey its sheet resistance stand-by；
The wherein POCl in step (1) and step (4)3The volume ratio of gas and nitrogen is 1:6.
Table 3: the correlation data of prior art comparative example and embodiment.
Inhomogeneities calculation method is (maximum value-minimum value)/(sheet resistance average value in piece) * 100% in piece
Table 4: the unit for electrical property parameters of prior art comparative example and embodiment comparison.
As can be seen from the above data, 3 comparative example of table, five warm areas obtain inhomogeneities be 12.2% respectively, 10.7%,
10.9%, 9.6% and 9.8%, and five warm areas of the embodiment of the present invention are respectively 3.2%, 4.3%, 4.3%, 3.3% and
3.2%.This illustrates that the present invention is significant to the uniform improvement of sheet resistance, and the efficiency of the embodiment after improvement is mentioned than comparative example
It is high by 0.07%.
Embodiment 3
The present embodiment provides a kind of methods of sheet resistance uniformity in improvement solar battery diffusion technology, including walk as follows
It is rapid:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 15min of 3000sccm at 800 DEG C；
(2) be passed through into furnace 2000sccm's and mixing POCl3Nitrogen, while be passed through 1500sccm oxygen and
The nitrogen of 20000sccm, diffusion furnace temperature are 800 DEG C, time 20min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 850 DEG C in 15min, make silicon wafer
The P elements on surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 1000sccm's and mixing POCl3Nitrogen, while be passed through 2000sccm oxygen and
The nitrogen of 20000sccm, keeping the in-furnace temperature of diffusion furnace is 860 DEG C, reaction time 14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 3000sccm and the nitrogen of 20000sccm, and duration of ventilation is
15min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 20000sccm, silicon wafer will be taken from diffusion furnace
Out and to survey its sheet resistance stand-by；
The wherein POCl in step (1) and step (4)3The volume ratio of gas and nitrogen is 1:6.
Table 5: the correlation data of prior art comparative example and embodiment.
Inhomogeneities calculation method is (maximum value-minimum value)/(sheet resistance average value in piece) * 100% in piece
Table 6: the unit for electrical property parameters of prior art comparative example and embodiment comparison.
As can be seen from the above data, 5 comparative example of table, five warm areas obtain inhomogeneities be 11% respectively, 12%, 9.8%,
8.6% and 12.2%, and five warm areas of the embodiment of the present invention are respectively 4.3%, 4.3%, 4.4%, 3.3% and 4.3%.
This illustrates that the present invention is significant to the uniform improvement of sheet resistance, and the efficiency of the embodiment after improvement is improved than comparative example
0.06%.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
It for member, without departing from the principle of the present invention, can also make several improvements, these improvement also should be regarded as of the invention
Protection scope.
Claims (5)
1. a kind of method for improving sheet resistance uniformity in solar battery diffusion technology, it is characterised in that include the following steps:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 10-19min of 2000-3000sccm at 750-800 DEG C；
(2) be passed through into furnace 1000-2000sccm's and mixing POCl3Nitrogen, while be passed through 1000-1500sccm oxygen and
The nitrogen of 15000-20000sccm, diffusion furnace temperature are 750-800 DEG C, time 15-20min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830-850 DEG C in 10-15min, make silicon
The P elements on piece surface are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 500-1000sccm's and mixing POCl3Nitrogen, while being passed through the oxygen of 1500-2000sccm
The nitrogen of gas and 15000-20000sccm, keeping the in-furnace temperature of diffusion furnace is 840-860 DEG C, reaction time 10-14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2000-3000sccm and the nitrogen of 15000-20000sccm, duration of ventilation
For 10-15min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keep being passed through the nitrogen of 15000-20000sccm, by silicon wafer from diffusion furnace
It takes out and to survey its sheet resistance stand-by.
2. the method according to claim 1 for improving sheet resistance uniformity in solar battery diffusion technology, it is characterised in that:
POCl in the step (1) and step (4)3The volume ratio of gas and nitrogen is 1-3:6.
3. the method according to claim 1 for improving sheet resistance uniformity in solar battery diffusion technology, it is characterised in that
Include the following steps:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 17min of 2500sccm at 780 DEG C；
(2) be passed through into furnace 1500sccm's and mixing POCl3Nitrogen, while being passed through the oxygen and 15000sccm of 1200sccm
Nitrogen, diffusion furnace temperature be 780 DEG C, time 18min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830 DEG C in 10min, make silicon chip surface
P elements are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 800sccm's and mixing POCl3Nitrogen, while be passed through 2000sccm oxygen and
The nitrogen of 15000sccm, keeping the in-furnace temperature of diffusion furnace is 850 DEG C, reaction time 14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2500sccm and the nitrogen of 15000sccm, duration of ventilation 12min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keeping the nitrogen for being passed through 20000sccm, simultaneously from diffusion furnace taking-up by silicon wafer
It is stand-by to survey its sheet resistance.
4. the method according to claim 1 for improving sheet resistance uniformity in solar battery diffusion technology, it is characterised in that
Include the following steps:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 10min of 2000sccm at 750 DEG C；
(2) be passed through into furnace 1000sccm's and mixing POCl3Nitrogen, while being passed through the oxygen and 15000sccm of 1000sccm
Nitrogen, diffusion furnace temperature be 750 DEG C, time 15min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 830 DEG C in 10min, make silicon chip surface
P elements are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 500sccm's and mixing POCl3Nitrogen, while be passed through 1500sccm oxygen and
The nitrogen of 15000sccm, keeping the in-furnace temperature of diffusion furnace is 840 DEG C, reaction time 10min；
(5) diffusion furnace stops heating and is passed through the oxygen of 2000sccm and the nitrogen of 15000sccm, duration of ventilation 10min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keeping the nitrogen for being passed through 15000sccm, simultaneously from diffusion furnace taking-up by silicon wafer
It is stand-by to survey its sheet resistance.
5. the method according to claim 1 for improving sheet resistance uniformity in solar battery diffusion technology, it is characterised in that
Include the following steps:
(1) silicon wafer is put into diffusion furnace, while being passed through the oxygen 15min of 3000sccm at 800 DEG C；
(2) be passed through into furnace 2000sccm's and mixing POCl3Nitrogen, while being passed through the oxygen and 20000sccm of 1500sccm
Nitrogen, diffusion furnace temperature be 800 DEG C, time 20min；
(3) stop being passed through oxygen, nitrogen and POCl3, and diffusion furnace temperature is promoted to 850 DEG C in 15min, make silicon chip surface
P elements are to promoting inside silicon wafer；
(4) be passed through into diffusion furnace 1000sccm's and mixing POCl3Nitrogen, while be passed through 2000sccm oxygen and
The nitrogen of 20000sccm, keeping the in-furnace temperature of diffusion furnace is 860 DEG C, reaction time 14min；
(5) diffusion furnace stops heating and is passed through the oxygen of 3000sccm and the nitrogen of 20000sccm, duration of ventilation 15min；
(6) furnace temperature will be spread and be down to 800 DEG C hereinafter, keeping the nitrogen for being passed through 20000sccm, simultaneously from diffusion furnace taking-up by silicon wafer
It is stand-by to survey its sheet resistance.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110164758A (en) * | 2019-05-22 | 2019-08-23 | 通威太阳能（合肥）有限公司 | A kind of diffusion technique reducing conventional polycrystalline battery drain value |
| CN111508829A (en) * | 2020-04-27 | 2020-08-07 | 徐州谷阳新能源科技有限公司 | Single crystal silicon battery piece diffusion efficiency-improving process capable of matching SE + alkali polishing |
| CN113078234A (en) * | 2020-01-03 | 2021-07-06 | 环晟光伏(江苏)有限公司 | Diffusion process for large-size silicon wafer |
| CN113555463A (en) * | 2020-04-23 | 2021-10-26 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
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