CN109037358A - A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery - Google Patents
A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery Download PDFInfo
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- CN109037358A CN109037358A CN201810874894.5A CN201810874894A CN109037358A CN 109037358 A CN109037358 A CN 109037358A CN 201810874894 A CN201810874894 A CN 201810874894A CN 109037358 A CN109037358 A CN 109037358A
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- 238000000034 method Methods 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 35
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 35
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 35
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 23
- 230000001737 promoting effect Effects 0.000 title claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims description 70
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 42
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 40
- 101100023111 Schizosaccharomyces pombe (strain 972 / ATCC 24843) mfc1 gene Proteins 0.000 claims description 22
- 229910021529 ammonia Inorganic materials 0.000 claims description 21
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 16
- 229910000077 silane Inorganic materials 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 235000013842 nitrous oxide Nutrition 0.000 claims description 11
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 239000001272 nitrous oxide Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 230000006872 improvement Effects 0.000 claims description 5
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 4
- 230000006978 adaptation Effects 0.000 claims description 4
- 239000003708 ampul Substances 0.000 claims description 4
- 239000004917 carbon fiber Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- 238000005457 optimization Methods 0.000 claims description 4
- 238000004904 shortening Methods 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 230000000750 progressive effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000003667 anti-reflective effect Effects 0.000 abstract description 2
- 241000407429 Maja Species 0.000 description 14
- 238000007747 plating Methods 0.000 description 8
- 238000002161 passivation Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000013341 scale-up Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- -1 silicon Alkane Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a kind of methods for promoting the board-like PECVD plated film production capacity of two-sided PERC battery, are related to crystal silicon solar batteries manufacturing field, solve the problems, such as to improve production capacity while existing PECVD coating process can not reduce electrical performance of cell.A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery, two-sided PERC cell backside anti-reflective effect is improved by the gradual coating process in the back side, it is final to improve the two-sided rate of PERC battery, start with from microwave power limitation, special throughput limitation, device parameter limitation etc. is improved, to achieve the purpose that promote production capacity.
Description
Technical field
The invention belongs to crystal silicon solar batteries manufacturing fields, promote two-sided PERC solar panel more particularly to a kind of
The method of formula PECVD plated film production capacity.
Background technique
Currently, efficiently crystal silicon battery is the mainstream development trend of solar battery, (passivation emits the PERC that cost performance is dominant
Pole back-contact cell) market will be largely occupied, have become the advanced solar battery chip technology of standard.PERC battery needs
Passivating back and back side coating film technique, it is seen that filming process is a most important ring in PERC cell piece production link, plated film
Quality directly influences the electrical property of cell piece.The more advanced equipment that can carry out back passivation at present includes micro- ALD led
The MAiA equipment of (atomic layer deposition) equipment and Mei Yeboge.The MAiA equipment of Mei Yeboge has multiple process cavities to be coupled, can be with
1 equipment of 3in for completing backside oxide aluminium plated film and silicon nitride plated film or even MAiA can disposably complete backside oxide aluminium, nitrogen
The plated film of SiClx and front side silicon nitride silicon.The advantages of MAiA is that plating film uniformity is good, disposable to complete backside oxide aluminium and silicon nitride
It can reduce environmental pollution in the case where plated film, it is easy to operate, the disadvantage is that productivity ratio ALD equipment is slightly lower, so filming process is past
Toward the production capacity bottleneck for being crystal silicon solar batteries piece, the production capacity for discharging filming process, which is always that crystal silicon battery enterprise is of concern, is asked
Topic.The passivation effect ratio ALD of the PERC cell backside aluminium oxide of MAiA equipment plating at present is poor, and MAiA equipment is caused to plate backside oxide aluminium
The film thickness of film must be in 20nm or more, and ALD equipment plating 5~10nm of pellumina film thickness can reach same effect, MAiA
Trimethyl aluminium is excited using the argon plasma that point discharge excites again, the argon gas and trimethyl aluminium mixed gas after excitation are again
It is reacted with laughing gas, mixed gas ionizes in quartz ampoule conducts microwaves energy, and the plasma of generation is formed in crystal silicon back surface
Film plating layer.In this film plating process, the limitation of microwave power and the limitation of special gas total flow are exactly to limit the board-like PECVD such as MAiA
Equipment produces the main reason for production capacity, and manufacturer installs and after debugging MAiA filming equipment, the batch production technique menu originally provided
Often than more conservative, it is contemplated that " running-in period " of equipment, not by special gas degree of ionization and the best journey of plasma-deposited rate
Degree matching is got up.The patent (201711336123.2) of Suntech Power Holdings's application, provides a kind of riser
The method of formula pecvd process production capacity is realized that the process operation time shortens in assisting workflows mainly after plated film, and is only limitted to
Tubular PECVD device；The patent (201621098512.7) of CANADIAN SOLAR INC.'s application, by changing
Become coated film deposition slot field traffic direction to reach and improve plasma utilization rate, such method plated film on MAiA is (quartzy
Pipe is above plated film cell piece) room for improvement is had no in equipment, the direction of the argon plasma beam spot after changing magnetic direction will
Change.
Currently in order to guaranteeing that two-sided PERC cell backside plated film is displayed in blue, most of producers use low light path plated film, and
Low film thickness, high refractive index coating process or gradual coating process are used while low light path plated film.It is plated using low light path
When membrane process, film plating layer passivation effect will be the important ring for determining PERC battery electrical property, improve board-like PECVD plated film
Film plating layer passivation effect is not reduced while production capacity, will be the current crystal silicon PERC battery producer technical problem to be solved.
Summary of the invention
In order to overcome above-mentioned technical deficiency, the present invention provides a kind of two-sided board-like PECVD plated film production capacity of PERC battery of promotion
Method, solve the problems, such as while existing PECVD coating process can not reduce electrical performance of cell improve production capacity.
The present invention to achieve the goals above, specifically uses following technical scheme:
A method of the board-like PECVD plated film production capacity of two-sided PERC battery being promoted, by using the gradual plated film work in the back side
Skill combines the improvement to original technological parameter to adjust, and realizes the purpose for improving the two-sided rate of PERC battery and promoting production capacity, method step
It suddenly is that modifications and adaptations are carried out in original technique, comprising the following steps:
(1), increase electronics spy gas total flow: under original process conditions, scale up argon gas, laughing gas, trimethyl aluminium,
The total flow of ammonia, silane.
(2), increase microwave power: increasing microwave power, there are two types of methods, first is that increasing microwave peak power, peak power
High alarm setting is 4400W, but microwave fluctuation is larger, and fluctuation is possible in 3800W to 4400W and generates equipment alarm, can will
Existing microwave power is promoted to 3400~3800W；Second is that increasing the microwave opening time or shortening the microwave shut-in time, by microwave
Opening time increases to 8ms by 3 original~6ms, or by the microwave shut-in time have 14 original~18ms be reduced to 8~
12ms, to achieve the purpose that increase mean power.
(3), reduce feed cavity preheating time: optimization vacuum degree and preheating temperature reduce support plate in the preheating of feed cavity
Between, so that the entrance process cavity of support plate as early as possible is carried out plated film.
(4), improve each chamber conveyer belt belt speed: carbon fiber support plate can be improved in the movement speed of each chamber in this process,
Belt speed can promote 10~30cm/min, to promote filming process production capacity.
Further, gradual coating process refers to, is by the corresponding spray of two groups of quartz ampoules of back side coating film process cavity
System is designed to the quantity of the different special feed channel spray apertures of flow or change, and by aluminium oxide and silicon nitride plated film from feed inlet
Close quartz ampoule plated film uses high refractive index technique.
Further, the design parameter of the gradual coating process of pellumina in gradual coating process are as follows: guarantee is laughed at
The flow of air-flow meter MFC1 is lower than the flow of nitrous oxide flowmeter MFC2, and the laughing gas flow set of MFC1 flowmeter is 500~
The laughing gas flow set of 700sccm, MFC2 flowmeter is 700~1000sccm.
Further, the design parameter of the gradual coating process of silicon nitride film in gradual coating process are as follows: ammonia flow
The flow set of meter MFC1 to MFC5 is 500~1400sccm；The flow set of ammonia flow meter MFC6 is 0~300sccm；
The flow set of ammonia flow meter MFC7 is 100~800sccm；The flow set of ammonia flow meter MFC8 is 50~300sccm；
The flow set of silane flow meter MFC1 to MFC5 is 150~600sccm；The flow set of silane flow meter MFC6 be 0~
200sccm。
Further, step (1) increases the process program of electronics spy gas total flow in gradual coating process scheme
Middle realization can continue to implement in the next steps and adjust.
Further, step (2), which increases microwave power, can be replaced the quality for changing microwave source or improving microwave catheter.
Further, original technological parameter refer to equipment into after factory, the corresponding original process being arranged of producer of supplier
Parameter, original process parameter are as follows: PM1 process cavity nitrous oxide flowmeter MFC1 and MFC2 are both configured to 600~700sccm, trimethyl
Aluminum flux meter is set as 450~550sccm, corresponding 2100~2300W of plasma source power, 3~5ms of pulse on-time,
16~18ms of pulse off-time；Process cavity pressure be 5 × 10-2mbar, 340~370 DEG C of process cavity temperature, PM1 process cavity band
Speed is set as 190~200cm/min.PM2 process cavity ammonia flow meter MFC1 to MFC5 is set as 600~800sccm, corresponding
3200~3500W of plasma source power, 8~9ms of pulse on-time, 10~11ms of pulse off-time；Silane flow meter
MFC1 to MFC5 is set as 280~340sccm, corresponding 3200~3500W of plasma source power, and pulse on-time 8~
9ms, 10~11ms of pulse off-time；440~470 DEG C of process cavity temperature, process cavity pressure is 5 × 10-2mbar；PM1 technique
Chamber belt speed is set as 190~200cm/min.
The course of work of the invention are as follows:
A method of the board-like PECVD plated film production capacity of two-sided PERC battery being promoted, the method and step is original
Modifications and adaptations are carried out in technique, comprising the following steps:
(1), increase electronics spy gas total flow: under original process conditions, scale up argon gas, laughing gas, trimethyl aluminium,
The total flow of ammonia, silane.
(2), increase microwave power: increasing microwave power, there are two types of methods, first is that increasing microwave peak power, peak power
High alarm setting is 4400W, but microwave fluctuation is larger, and fluctuation is possible in 3800W to 4400W and generates equipment alarm, can will
Existing microwave power is promoted to 3400~3800W；Second is that increasing the microwave opening time or shortening the microwave shut-in time, by microwave
Opening time increases to 8ms by 3 original~6ms, or by the microwave shut-in time have 14 original~18ms be reduced to 8~
12ms, to achieve the purpose that increase mean power.
(3), reduce feed cavity preheating time: optimization vacuum degree and preheating temperature reduce support plate in the preheating of feed cavity
Between, so that the entrance process cavity of support plate as early as possible is carried out plated film.
(4), improve each chamber conveyer belt belt speed: carbon fiber support plate can be improved in the movement speed of each chamber in this process,
Belt speed can promote 10~30cm/min, to promote filming process production capacity.
The present invention compared with prior art, the invention has the following advantages:
1, the gradual back side coating film technique that the present invention uses can make two-sided PERC cell backside plated film using low light
When journey technique, it is also able to ascend the anti-reflective effect of cell backside, to promote the two-sided rate of two-sided PERC battery, is promoted overall
Battery conversion efficiency.
2, the gradual back side coating film technique that the present invention uses, can make aluminium oxide and silicon nitride plated film close from feed inlet
Quartz ampoule plated film use high refractive index technique, do not influence the passivation effect of bottom while reducing plated film film thickness in this way, from
And the two-sided rate of two-sided PERC battery is promoted, promote overall cell transfer efficiency.
3, the present invention, which promotes coating process using the production capacity, can make every under the premise of not reducing battery conversion efficiency
The board-like every 11.5 hours plated films cell piece yield of PECVD device promotes 1700 or more, and filming process can be made to have more sections
Cell piece is deposited, so as to reach production capacity with leading portion annealing operation and back segment back side fluting process and match.
4, the process that the present invention promotes plated film production capacity can be used in two-sided PERC battery and routine PERC battery,
It is widely used, it is practical.
Detailed description of the invention
Fig. 1 is process flow diagram of the invention；
Fig. 2 is the electric performance test data comparison table of two kinds of embodiments of the invention.
Specific embodiment
In order to which those skilled in the art better understand the present invention, with reference to the accompanying drawing with following embodiment to the present invention
It is described in further detail.
Embodiment 1: as depicted in figs. 1 and 2, a kind of side for promoting the board-like PECVD plated film production capacity of two-sided PERC battery is provided
Method, PM1 process cavity nitrous oxide flowmeter MFC1 are set as 550~650sccm, and trimethyl aluminium flowmeter is set as 450~
550sccm, corresponding 2100~2300W of plasma source power, 3~5ms of pulse on-time, pulse off-time 16~
18ms；The laughing gas difference in flow that nitrous oxide flowmeter MFC2 is set as 700~800sccm, MFC2 and MFC1 is 150~200sccm, right
2400~the 2600W of plasma source power answered, 5~7ms of pulse on-time, 16~18ms of pulse off-time；Process cavity temperature
340~370 DEG C of degree, process cavity pressure are 5 × 10-2mbar；PM1 process cavity belt speed is set as 200~210cm/min.PM2 work
Skill chamber ammonia flow meter MFC1 to MFC5 is set as 800~900sccm, and silane flow meter MFC1 to MFC5 is set as 300~
400sccm, corresponding 3700~3900W of plasma source power, 8~9ms of pulse on-time, 9~10ms of pulse off-time；
Ammonia flow meter MFC6 and MFC8 are set as 200~300sccm, and ammonia flow meter MFC7 is set as 600~700sccm, silane
Flowmeter MFC6 and MFC8 are set as 40~50sccm, and silane flow meter MFC7 is set as 100~150sccm, it is corresponding it is equal from
Component 3700~3900W of power, 8~9ms of pulse on-time, 9~10ms of pulse off-time；Process cavity temperature 440~470
DEG C, process cavity pressure is 5 × 10-2mbar；PM2 process cavity belt speed is set as 210~220cm/min.
This technique can make MAiA equipment PM1 process cavity belt speed promote 10~20cm/min, can promote PM2 process cavity belt speed and mention
10~20cm/min is risen, every 150~300 tablets h of MAiA equipment lifting production capacity can be made, works 11.5 hours and counts according to per tour
It calculates, per tour can promote production capacity 1725 to 3100；
Embodiment 2: as depicted in figs. 1 and 2, this implementation is to advanced optimize on the basis of embodiment 1, the present embodiment weight
Point illustrates improvements compared with Example 1, and something in common repeats no more, and PM1 process cavity nitrous oxide flowmeter MFC1 is set as
550~650sccm, trimethyl aluminium flowmeter are set as 450~550sccm, corresponding 2300~2500W of plasma source power,
4~6ms of pulse on-time, 16~18ms of pulse off-time；Nitrous oxide flowmeter MFC2 is set as 700~800sccm, MFC2
Laughing gas difference in flow with MFC1 is 150~200sccm, corresponding 2400~2600W of plasma source power, pulse on-time 5
~7ms, 16~18ms of pulse off-time；340~370 DEG C of process cavity temperature, process cavity pressure is 5 × 10-2mbar；PM1 work
Skill chamber belt speed is set as 205~210cm/min.PM2 process cavity ammonia flow meter MFC1 and MFC2 are set as 550~650sccm,
Silane flow meter MFC1 and MFC2 are set as 350~450sccm, corresponding 3700~3900W of plasma source power, and pulse is opened
8~9ms of time, 9~10ms of pulse off-time；Ammonia flow meter MFC3, MFC4 and MFC5 are set as 600~800sccm, silicon
Alkane flowmeter MFC3, MFC4 and MFC5 are set as 250~350sccm, corresponding 3700~3900W of plasma source power, pulse
8~9ms of opening time, 9~10ms of pulse off-time；Ammonia flow meter MFC6 and MFC8 are set as 50~100sccm, ammonia
Flowmeter MFC7 is set as 400~500sccm, and silane flow meter MFC6 and MFC8 are set as 40~60sccm, silane flow meter
MFC7 is set as 120~160sccm, corresponding 3700~3900W of plasma source power, 8~9ms of pulse on-time, pulse
9~10ms of shut-in time；440~470 DEG C of process cavity temperature, process cavity pressure is 5 × 10-2mbar；PM2 process cavity belt speed is set
It is set to 210~220cm/min.
This technique can make MAiA equipment PM1 process cavity belt speed promote 10~20cm/min, can promote PM2 process cavity belt speed and mention
10~20cm/min is risen, every 150~300 tablets h of MAiA equipment lifting production capacity can be made, works 11.5 hours and counts according to per tour
It calculates, per tour can promote production capacity 1725 to 3100；Simultaneously because in the two-sided back side PERC plating silicon nitride film layer using gradual
Coating process, so that the two-sided two-sided rate of PERC battery is promoted than common process.
Embodiment 3: as depicted in figs. 1 and 2, this implementation is to advanced optimize on the basis of embodiment 1, the present embodiment weight
Point illustrates improvements compared with Example 1, and something in common repeats no more, original technological parameter refer to equipment into after factory,
The corresponding original process parameter being arranged of producer of supplier, specific process parameter are as follows: PM1 process cavity nitrous oxide flowmeter MFC1 and
MFC2 is both configured to 600~700sccm, and trimethyl aluminium flowmeter is set as 450~550sccm, corresponding plasma source power
2100~2300W, 3~5ms of pulse on-time, 16~18ms of pulse off-time；Process cavity pressure is 5 × 10-2mbar,
340~370 DEG C of process cavity temperature, PM1 process cavity belt speed is set as 190~200cm/min.PM2 process cavity ammonia flow meter
MFC1 to MFC5 is set as 600~800sccm, corresponding 3200~3500W of plasma source power, and pulse on-time 8~
9ms, 10~11ms of pulse off-time；Silane flow meter MFC1 to MFC5 is set as 280~340sccm, corresponding plasma
3200~3500W of source power, 8~9ms of pulse on-time, 10~11ms of pulse off-time；Process cavity temperature 440~470
DEG C, process cavity pressure is 5 × 10-2mbar；PM1 process cavity belt speed is set as 190~200cm/min.
The operation principle of the present invention is that:
A method of the board-like PECVD plated film production capacity of two-sided PERC battery being promoted, the method and step is original
Modifications and adaptations are carried out in technique, comprising the following steps:
(1), increase electronics spy gas total flow: under original process conditions, scale up argon gas, laughing gas, trimethyl aluminium,
The total flow of ammonia, silane.
(2), increase microwave power: increasing microwave power, there are two types of methods, first is that increasing microwave peak power, peak power
High alarm setting is 4400W, but microwave fluctuation is larger, and fluctuation is possible in 3800W to 4400W and generates equipment alarm, can will
Existing microwave power is promoted to 3400~3800W；Second is that increasing the microwave opening time or shortening the microwave shut-in time, by microwave
Opening time increases to 8ms by 3 original~6ms, or by the microwave shut-in time have 14 original~18ms be reduced to 8~
12ms, to achieve the purpose that increase mean power.
(3), reduce feed cavity preheating time: optimization vacuum degree and preheating temperature reduce support plate in the preheating of feed cavity
Between, so that the entrance process cavity of support plate as early as possible is carried out plated film.
(4), improve each chamber conveyer belt belt speed: carbon fiber support plate can be improved in the movement speed of each chamber in this process,
Belt speed can promote 10~30cm/min, to promote filming process production capacity.
The above, only presently preferred embodiments of the present invention, are not intended to limit the invention, patent protection model of the invention
It encloses and is subject to claims, it is all to change with equivalent structure made by specification and accompanying drawing content of the invention, similarly
It should be included within the scope of the present invention.
Claims (7)
1. a kind of method for promoting the board-like PECVD plated film production capacity of two-sided PERC battery, the method are progressive by using the back side
Formula coating process combines the improvement to original technological parameter to adjust, and realizes the mesh for improving the two-sided rate of PERC battery and promoting production capacity
, which is characterized in that the method and step is that modifications and adaptations are carried out in original technique, comprising the following steps:
(1), increase electronics spy gas total flow: under original process conditions, scaling up argon gas, laughing gas, trimethyl aluminium, ammonia
The total flow of gas, silane.
(2), increase microwave power: increasing microwave power, there are two types of methods, first is that increase microwave peak power, peak power alarm
The upper limit is 4400W, but microwave fluctuation is larger, and fluctuation is possible in 3800W to 4400W and generates equipment alarm, can will be existing
Microwave power promoted to 3400~3800W；Second is that increasing the microwave opening time or shortening the microwave shut-in time, microwave is opened
Time increases to 8ms by 3 original~6ms, or has 14 original~18ms to be reduced to 8~12ms the microwave shut-in time,
To achieve the purpose that increase mean power.
(3), reduce feed cavity preheating time: optimization vacuum degree and preheating temperature reduces support plate in the preheating time of feed cavity,
The entrance process cavity of support plate as early as possible is set to carry out plated film.
(4), improve each chamber conveyer belt belt speed: carbon fiber support plate can be improved in the movement speed of each chamber, belt speed in this process
10~30cm/min can be promoted, to promote filming process production capacity.
2. the method according to claim 1 for promoting the two-sided board-like PECVD plated film production capacity of PERC battery, which is characterized in that
The gradual coating process refers to, the corresponding spray system of two groups of quartz ampoules of back side coating film process cavity is designed to difference
Flow or change the quantity of special feed channel spray apertures, and aluminium oxide and silicon nitride the plated film quartz ampoule close from feed inlet are plated
Film uses high refractive index technique.
3. the method according to claim 1 for promoting the two-sided board-like PECVD plated film production capacity of PERC battery, which is characterized in that
The design parameter of the gradual coating process of pellumina in the gradual coating process are as follows: guarantee nitrous oxide flowmeter MFC1
Flow be lower than the flow of nitrous oxide flowmeter MFC2, the laughing gas flow set of MFC1 flowmeter is 500~700sccm, MFC2 stream
The laughing gas flow set of meter is 700~1000sccm.
4. the method according to claim 1 for promoting the two-sided board-like PECVD plated film production capacity of PERC battery, which is characterized in that
The design parameter of the gradual coating process of silicon nitride film in the gradual coating process are as follows: ammonia flow meter MFC1 is arrived
The flow set of MFC5 is 500~1400sccm；The flow set of ammonia flow meter MFC6 is 0~300sccm；Ammonia flow meter
The flow set of MFC7 is 100~800sccm；The flow set of ammonia flow meter MFC8 is 50~300sccm；Silane flow meter
The flow set of MFC1 to MFC5 is 150~600sccm；The flow set of silane flow meter MFC6 is 0~200sccm.
5. the method according to claim 1 for promoting the two-sided board-like PECVD plated film production capacity of PERC battery, which is characterized in that
The process program that step (1) increases electronics spy gas total flow is realized in gradual coating process scheme, in subsequent step
In can continue implement and adjust.
6. the method according to claim 1 for promoting the two-sided board-like PECVD plated film production capacity of PERC battery, which is characterized in that
Step (2), which increases microwave power, can be replaced the quality for changing microwave source or improving microwave catheter.
7. the method according to claim 1 for promoting the two-sided board-like PECVD plated film production capacity of PERC battery, which is characterized in that
Original technological parameter refer to equipment into after factory, the corresponding original process parameter being arranged of producer of supplier.
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