CN113283053A - Method for establishing pecvd coating process parameters of crystalline silicon battery - Google Patents
Method for establishing pecvd coating process parameters of crystalline silicon battery Download PDFInfo
- Publication number
- CN113283053A CN113283053A CN202110414857.8A CN202110414857A CN113283053A CN 113283053 A CN113283053 A CN 113283053A CN 202110414857 A CN202110414857 A CN 202110414857A CN 113283053 A CN113283053 A CN 113283053A
- Authority
- CN
- China
- Prior art keywords
- value
- process gas
- pressure
- cavity
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2111/00—Details relating to CAD techniques
- G06F2111/10—Numerical modelling
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2113/00—Details relating to the application field
- G06F2113/08—Fluids
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to the field of solar cell production. A method for establishing a pecvd coating process parameter of a crystalline silicon battery comprises an equipment initial parameter establishing method, an equipment process parameter optimizing method, an equipment initial parameter establishing method, determination of a total flow initial value of process gas, determination of a pressure initial value of a process cavity and determination of a deposition power initial value of the process gas; the method comprises the steps of optimizing the technological parameters of the equipment, determining the optimal value of the total gas flow of the technological cavity and determining the optimal value of the pressure of the technological cavity. The invention can effectively reduce the difficulty of establishing the process parameters of the new equipment, simultaneously ensure the rationality of parameter optimization and provide convenience for the optimization and adjustment of the process parameters.
Description
Technical Field
The invention relates to the field of solar cell production.
Background
With the large-area popularization and application of the PECVD dielectric film preparation technology in the photovoltaic manufacturing field, the technology is mature day by day, and the establishment of process parameters and the later process improvement become more important in the process of preparing different dielectric films by utilizing the PECVD technology.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to quickly establish process parameters suitable for different equipment.
The technical scheme adopted by the invention is as follows: a method for establishing the pecvd coating process parameters of a crystalline silicon cell comprises an equipment initial parameter establishing method and an equipment process parameter optimizing method
The method for establishing the initial parameters of the equipment comprises the following steps
Step one, determining an initial value of total flow of process gas, setting the pressure of a process cavity equal to an empirical value of the pressure of the process cavity, the deposition power of the process gas equal to an empirical value of the deposition power of the process gas, the flow stabilizing time of the process gas as the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump as 0, and measuring to obtain the total flow of the process gas, namely the initial value of the total flow of the process gas;
step two, determining an initial value of the pressure of the process cavity, setting the total flow of the process gas to be equal to the initial value of the total flow of the process gas, the deposition power of the process gas to be equal to an empirical value of the deposition power of the process gas, the steady flow time of the process gas to be ventilation time before the pressure reaches the empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the pressure of the process cavity, namely the initial value of the pressure of the process cavity; determining an initial value of the deposition power of the process gas, setting the total flow of the process gas to be equal to the initial value of the total flow of the process gas, the pressure of the process cavity to be equal to the initial value of the pressure of the process cavity, the flow stabilizing time of the process gas to be the ventilation time before the pressure reaches an empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the deposition power of the process gas, namely the initial value of the deposition power of the process gas;
the method for optimizing the technological parameters of the equipment comprises the following steps
Step 1, determining a process cavity gas total flow optimization value, setting the opening of a butterfly valve of a vacuum pump to be 40-60%, setting the process cavity pressure to be equal to an initial process cavity pressure value, setting the process gas deposition power to be equal to an initial process gas deposition power value, setting the process gas steady flow time to be ventilation time before the pressure reaches an empirical process cavity pressure value, and measuring to obtain the process gas total flow which is the process cavity gas total flow optimization value;
step 2, determining a process cavity pressure optimized value, setting the total flow of process gas to be equal to the process cavity gas total flow optimized value, the process gas deposition power to be equal to the process gas deposition power initial value, the process gas steady flow time to be the ventilation time before the pressure reaches the process cavity pressure empirical value, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the process cavity pressure which is the process cavity pressure optimized value;
and 3, determining an optimized value of the deposition power of the process gas, setting the total flow of the process gas to be equal to the optimized value of the total flow of the process gas, the pressure of the process cavity to be equal to the optimized value of the pressure of the process cavity, the flow stabilizing time of the process gas to be the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the deposition power of the process gas, namely the initial value of the deposition power of the process gas.
The invention has the beneficial effects that: the invention provides a method for establishing the pecvd coating process parameters of a crystalline silicon battery, which can effectively reduce the difficulty of establishing the process parameters of new equipment, simultaneously ensure the rationality of parameter optimization and provide convenience for the optimization and adjustment of the process parameters.
Detailed Description
A method for establishing the pecvd coating process parameters of a crystalline silicon cell comprises an equipment initial parameter establishing method and an equipment process parameter optimizing method
The method for establishing initial parameters of the equipment comprises the following steps of taking the longitudinal uniformity of a coated sample as a measurement standard
Step one, determining an initial value of total process gas flow, setting process cavity pressure equal to 2000mtorr (empirical value of process cavity pressure), process gas deposition power equal to 9000W (empirical value of process gas deposition power), process gas steady flow time of 10s (ventilation time before pressure reaches the empirical value of process cavity pressure), and a vacuum pump butterfly valve opening value of 0, and measuring to obtain the total process gas flow which is the initial value of the total process gas flow;
step two, determining an initial value of the pressure of the process cavity, setting the total flow of the process gas to be equal to the initial value of the total flow of the process gas, the deposition power of the process gas to be equal to 9000W (empirical value of the deposition power of the process gas), the steady flow time of the process gas to be 10s (ventilation time before the pressure reaches the empirical value of the pressure of the process cavity), and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the pressure of the process cavity, namely the initial value of the pressure of the process cavity; step three, determining an initial value of the deposition power of the process gas, setting the total flow of the process gas to be equal to the initial value of the total flow of the process gas, the pressure of the process cavity to be equal to the initial value of the pressure of the process cavity, the flow stabilizing time of the process gas to be 10s (the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity), the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the deposition power of the process gas, namely the initial value of the deposition power of the process gas;
the method for optimizing the technological parameters of the equipment is carried out according to the following steps of taking the longitudinal uniformity of a coating sample as a measurement standard
Step 1, determining a process cavity gas total flow optimization value, setting the opening of a butterfly valve of a vacuum pump to be 40-60%, setting the process cavity pressure to be equal to an initial value of the process cavity pressure, setting the process gas deposition power to be equal to an initial value of the process gas deposition power, setting the process gas steady flow time to be 10s (ventilation time before the pressure reaches an empirical value of the process cavity pressure), and measuring to obtain the process gas total flow which is the process cavity gas total flow optimization value;
step 2, determining an optimized value of the pressure of the process cavity, setting the total flow of the process gas to be equal to the optimized value of the total flow of the process cavity gas, the deposition power of the process gas to be equal to the initial value of the deposition power of the process gas, the steady flow time of the process gas to be 10s (the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity), and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the pressure of the process cavity, namely the optimized value of the pressure of the process cavity;
and 3, determining an optimized value of the deposition power of the process gas, setting the total flow of the process gas to be equal to the optimized value of the total flow of the process gas, the pressure of the process cavity to be equal to the optimized value of the pressure of the process cavity, the flow stabilizing time of the process gas to be 10s (the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity), and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the deposition power of the process gas, namely the initial value of the deposition power of the process gas.
Claims (1)
1. A method for establishing the pecvd coating process parameters of a crystalline silicon battery is characterized by comprising the following steps: comprises an equipment initial parameter establishing method and an equipment process parameter optimizing method
The method for establishing the initial parameters of the equipment comprises the following steps
Step one, determining an initial value of total flow of process gas, setting the pressure of a process cavity equal to an empirical value of the pressure of the process cavity, the deposition power of the process gas equal to an empirical value of the deposition power of the process gas, the flow stabilizing time of the process gas as the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump as 0, and measuring to obtain the total flow of the process gas, namely the initial value of the total flow of the process gas;
step two, determining an initial value of the pressure of the process cavity, setting the total flow of the process gas to be equal to the initial value of the total flow of the process gas, the deposition power of the process gas to be equal to an empirical value of the deposition power of the process gas, the steady flow time of the process gas to be ventilation time before the pressure reaches the empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the pressure of the process cavity, namely the initial value of the pressure of the process cavity; determining an initial value of the deposition power of the process gas, setting the total flow of the process gas to be equal to the initial value of the total flow of the process gas, the pressure of the process cavity to be equal to the initial value of the pressure of the process cavity, the flow stabilizing time of the process gas to be the ventilation time before the pressure reaches an empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the deposition power of the process gas, namely the initial value of the deposition power of the process gas;
the method for optimizing the technological parameters of the equipment comprises the following steps
Step 1, determining a process cavity gas total flow optimization value, setting the opening of a butterfly valve of a vacuum pump to be 40-60%, setting the process cavity pressure to be equal to an initial process cavity pressure value, setting the process gas deposition power to be equal to an initial process gas deposition power value, setting the process gas steady flow time to be ventilation time before the pressure reaches an empirical process cavity pressure value, and measuring to obtain the process gas total flow which is the process cavity gas total flow optimization value;
step 2, determining a process cavity pressure optimized value, setting the total flow of process gas to be equal to the process cavity gas total flow optimized value, the process gas deposition power to be equal to the process gas deposition power initial value, the process gas steady flow time to be the ventilation time before the pressure reaches the process cavity pressure empirical value, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the process cavity pressure which is the process cavity pressure optimized value;
and 3, determining an optimized value of the deposition power of the process gas, setting the total flow of the process gas to be equal to the optimized value of the total flow of the process gas, the pressure of the process cavity to be equal to the optimized value of the pressure of the process cavity, the flow stabilizing time of the process gas to be the ventilation time before the pressure reaches the empirical value of the pressure of the process cavity, and the opening value of a butterfly valve of a vacuum pump to be 40-60%, and measuring to obtain the deposition power of the process gas, namely the initial value of the deposition power of the process gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110414857.8A CN113283053B (en) | 2021-04-17 | 2021-04-17 | Method for establishing pecvd coating process parameters of crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110414857.8A CN113283053B (en) | 2021-04-17 | 2021-04-17 | Method for establishing pecvd coating process parameters of crystalline silicon battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113283053A true CN113283053A (en) | 2021-08-20 |
| CN113283053B CN113283053B (en) | 2022-09-30 |
Family
ID=77276932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110414857.8A Active CN113283053B (en) | 2021-04-17 | 2021-04-17 | Method for establishing pecvd coating process parameters of crystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113283053B (en) |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577751A (en) * | 2003-07-10 | 2005-02-09 | 应用材料有限公司 | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
| CN101414646A (en) * | 2007-10-17 | 2009-04-22 | 倪党生 | A kind of new technique for manufacturing thin-film solar cell |
| CN101820008A (en) * | 2009-12-15 | 2010-09-01 | 江苏华创光电科技有限公司 | Monocrystalline film solar cell and preparation method thereof |
| CN101921998A (en) * | 2009-06-16 | 2010-12-22 | 亚洲太阳科技有限公司 | Plasma enhanced chemical vapor deposition (PECVD) device and method capable of enhancing uniformity of thin film solar cell |
| CN102117851A (en) * | 2011-01-13 | 2011-07-06 | 山东舜亦新能源有限公司 | N type polycrystalline silicon battery plate and production method thereof |
| JP2013105732A (en) * | 2011-11-17 | 2013-05-30 | Yoshiaki Nagaura | Secondary battery module using silica electrode and method of manufacturing the same |
| CN103556125A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film |
| CN103715131A (en) * | 2012-09-29 | 2014-04-09 | 中国航天科技集团公司第九研究院第七七一研究所 | High depth width ratio TSV through hole step-by-step etching and side wall modification method |
| CN103996741A (en) * | 2014-05-20 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Solar cell graphite boat and film coating method thereof |
| CN104241449A (en) * | 2014-09-18 | 2014-12-24 | 百力达太阳能股份有限公司 | Technology for manufacturing polycrystalline silicon solar cells |
| CN104498908A (en) * | 2014-11-19 | 2015-04-08 | 横店集团东磁股份有限公司 | PECVD coating technology used for preparing assembly crystal silicon solar energy battery |
| CN105525278A (en) * | 2015-12-29 | 2016-04-27 | 常州比太科技有限公司 | Cleaning method for PECVD silicon or silicide coating chamber |
| KR101827929B1 (en) * | 2017-05-15 | 2018-02-09 | 주식회사 벤투스솔루션 | Manufacturing method of a textile metal substrate for an electrode of a textile dye-sensitized solar cell, the textile metal substrate manufactured therefrom, and the textile dye-sensitized solar cell having the same |
| CN108695408A (en) * | 2018-05-03 | 2018-10-23 | 江西展宇新能源股份有限公司 | A kind of tubular type PECVD deposited silicon nitrides laminated antireflection film technique |
| CN109037358A (en) * | 2018-08-01 | 2018-12-18 | 通威太阳能（成都）有限公司 | A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery |
| CN109355702A (en) * | 2018-12-19 | 2019-02-19 | 长沙新材料产业研究院有限公司 | A method of for reducing CVD diamond synthesis impurity content |
| CN110416363A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | A kind of matching alkali throws the front passivation technology of selective emitter |
| CN111564529A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Normal-pressure oxidation process for crystalline silicon battery |
| CN112382696A (en) * | 2020-10-15 | 2021-02-19 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon SiON double-sided battery back passivation process |
-
2021
- 2021-04-17 CN CN202110414857.8A patent/CN113283053B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1577751A (en) * | 2003-07-10 | 2005-02-09 | 应用材料有限公司 | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
| CN101414646A (en) * | 2007-10-17 | 2009-04-22 | 倪党生 | A kind of new technique for manufacturing thin-film solar cell |
| CN101921998A (en) * | 2009-06-16 | 2010-12-22 | 亚洲太阳科技有限公司 | Plasma enhanced chemical vapor deposition (PECVD) device and method capable of enhancing uniformity of thin film solar cell |
| CN101820008A (en) * | 2009-12-15 | 2010-09-01 | 江苏华创光电科技有限公司 | Monocrystalline film solar cell and preparation method thereof |
| CN102117851A (en) * | 2011-01-13 | 2011-07-06 | 山东舜亦新能源有限公司 | N type polycrystalline silicon battery plate and production method thereof |
| JP2013105732A (en) * | 2011-11-17 | 2013-05-30 | Yoshiaki Nagaura | Secondary battery module using silica electrode and method of manufacturing the same |
| CN103715131A (en) * | 2012-09-29 | 2014-04-09 | 中国航天科技集团公司第九研究院第七七一研究所 | High depth width ratio TSV through hole step-by-step etching and side wall modification method |
| CN103556125A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film |
| CN103996741A (en) * | 2014-05-20 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Solar cell graphite boat and film coating method thereof |
| CN104241449A (en) * | 2014-09-18 | 2014-12-24 | 百力达太阳能股份有限公司 | Technology for manufacturing polycrystalline silicon solar cells |
| CN104498908A (en) * | 2014-11-19 | 2015-04-08 | 横店集团东磁股份有限公司 | PECVD coating technology used for preparing assembly crystal silicon solar energy battery |
| CN105525278A (en) * | 2015-12-29 | 2016-04-27 | 常州比太科技有限公司 | Cleaning method for PECVD silicon or silicide coating chamber |
| KR101827929B1 (en) * | 2017-05-15 | 2018-02-09 | 주식회사 벤투스솔루션 | Manufacturing method of a textile metal substrate for an electrode of a textile dye-sensitized solar cell, the textile metal substrate manufactured therefrom, and the textile dye-sensitized solar cell having the same |
| CN108695408A (en) * | 2018-05-03 | 2018-10-23 | 江西展宇新能源股份有限公司 | A kind of tubular type PECVD deposited silicon nitrides laminated antireflection film technique |
| CN109037358A (en) * | 2018-08-01 | 2018-12-18 | 通威太阳能（成都）有限公司 | A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery |
| CN109355702A (en) * | 2018-12-19 | 2019-02-19 | 长沙新材料产业研究院有限公司 | A method of for reducing CVD diamond synthesis impurity content |
| CN110416363A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | A kind of matching alkali throws the front passivation technology of selective emitter |
| CN111564529A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Normal-pressure oxidation process for crystalline silicon battery |
| CN112382696A (en) * | 2020-10-15 | 2021-02-19 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon SiON double-sided battery back passivation process |
Non-Patent Citations (2)
| Title |
|---|
| 杨飞飞 等: "板式pecvd制备氧化铝工艺研究", 《山西化工》 * |
| 马新尖 等: "单晶硅太阳电池防电势诱导衰减镀膜工艺分析", 《激光与光电子学进展》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113283053B (en) | 2022-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105132874B (en) | The method that a kind of direct current/radio frequency cosputtering method prepares high concentration gradient AZO monocrystalline conductive films | |
| CN102856174B (en) | Preparation method for silicon nitride film, solar cell with silicon nitride film and preparation method for solar cell | |
| CN102534547A (en) | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell | |
| CN104882516A (en) | High-temperature low-pressure method for silicon wafer diffusion | |
| CN103022254B (en) | Graduated-refractive-index antireflection-film solar cell and preparation method thereof | |
| CN113283053B (en) | Method for establishing pecvd coating process parameters of crystalline silicon battery | |
| CN108649264B (en) | Preparation method of thin film solid electrolyte added with buffer layer | |
| CN101660131B (en) | Method for preparing hydrogenated silicon film by utilizing magnetron sputtering | |
| CN102569533B (en) | Method for preparing passivation antireflection film on front surface of crystalline silicon solar battery | |
| CN103590015A (en) | Method and device for preparing P-type amorphous-silicon-doped thin film | |
| CN103337525B (en) | The solar battery sheet of anti-PID effect and manufacture method thereof | |
| CN108588676A (en) | A kind of solar battery antireflective film and preparation method thereof | |
| CN108767056B (en) | Hydrogen-rich PECVD process method for enhancing hydrogen passivation capability of solar cell | |
| CN102254799B (en) | Method for preparing AZO antireflective film of solar cell | |
| CN109244193B (en) | Solar cell preparation process and process control system | |
| CN103035777A (en) | Preparation method of three-layer SiN antireflective coatings of improved polycrystalline silicon solar cell | |
| CN105132875B (en) | A kind of method that diffusion method prepares high concentration gradient AZO monocrystalline conductive films | |
| CN113299792B (en) | Automatic control method for crystalline silicon battery coating process | |
| CN101660132B (en) | Method for preparing silicon-carbon hydride film by magnetron sputtering | |
| CN102108494B (en) | Deposition method for microcrystalline silicon thin films and device for monitoring plasma assisted deposition | |
| CN109935640B (en) | Coating method of crystalline silicon solar cell | |
| CN102306680B (en) | Process for preparing crystalline silicon solar cell antireflective film | |
| CN103268954B (en) | LiSiPON (lithium silicon phosphorus) lithium-ion battery solid electrolyte film, and preparation method and application thereof | |
| CN102790133A (en) | Method for preparing microcrystal silicon film according to multi-step growing method | |
| CN112349815A (en) | PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving battery conversion efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |