CN112349815A - PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving battery conversion efficiency - Google Patents
PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving battery conversion efficiency Download PDFInfo
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- CN112349815A CN112349815A CN202011302354.3A CN202011302354A CN112349815A CN 112349815 A CN112349815 A CN 112349815A CN 202011302354 A CN202011302354 A CN 202011302354A CN 112349815 A CN112349815 A CN 112349815A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 41
- 230000008569 process Effects 0.000 title claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 20
- 238000002161 passivation Methods 0.000 title claims abstract description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 66
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 66
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 17
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000077 silane Inorganic materials 0.000 claims abstract description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 30
- 235000012431 wafers Nutrition 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving the conversion efficiency of a battery, wherein the process belt speed in a silicon nitride cavity is set to be 250cm/min at 210-; the first ammonia gas flow is set to be 650sccm for 500-; setting the flow rates of the ammonia gas in the left, middle and right three sections of the sixth gas path to be 0-250sccm, 0-700sccm and 0-250sccm respectively; the flow rates of the left, middle and right three sections of silane are respectively set to be 0-100sccm, 0-250sccm and 0-100 sccm; the radio frequency power of the six air channels is set to 3800W, and the duty ratio is set to 8/9; the invention does not need to improve the equipment, and only needs to adjust the film structure of the silicon nitride cavity of the PECVD machine, thereby realizing the purpose of improving the conversion efficiency of the battery.
Description
Technical Field
The invention belongs to the technical field of silicon solar cell manufacturing, and particularly relates to a PECVD (plasma enhanced chemical vapor deposition) machine table passivation process for improving cell conversion efficiency.
Background
The PERC technology is used for passivating the back surface of the emitter, the passivation layer is formed on the back surface of the silicon solar cell, the back surface electrical recombination rate can be greatly reduced, a good internal optical back reflection mechanism is formed, the open-circuit voltage and the short-circuit current of the cell are improved, and therefore the conversion efficiency of the cell is improved.
The core of the PERC solar cell is that a layer of alumina film and a layer of silicon nitride film are plated on the backlight surface of a silicon wafer to cover so as to passivate silicon, and the existing alumina deposition technology widely applied to large-scale production mainly comprises two types: one is Plasma Enhanced Chemical Vapor Deposition (PECVD) and the other is Atomic Layer Deposition (ALD). The PECVD method has the largest market share, can be used for depositing silicon nitride in the production of batteries, and can be completed in the same working procedure of different cavities by depositing aluminum oxide and covering silicon nitride; while the ALD technique has better quality of deposited film than PECVD, it requires an additional set of PECVD equipment for silicon nitride deposition in the production line, and thus the equipment investment cost is high.
The passivation effect directly affects the conversion efficiency of the cell, so that it is necessary to develop a PECVD machine passivation process for improving the conversion efficiency of the cell to solve the above problems.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and provides a PECVD machine table passivation process for improving the conversion efficiency of a battery, which does not need to improve equipment and only needs to adjust the film structure of a silicon nitride cavity of the PECVD machine table to realize the aim of improving the conversion efficiency of the battery.
The purpose of the invention is realized as follows: the PECVD machine table passivation process for improving the battery conversion efficiency comprises a PECVD machine table, wherein the PECVD machine table comprises an aluminum oxide cavity and a silicon nitride cavity, the aluminum oxide cavity is used for plating an aluminum oxide film on a silicon wafer, the silicon nitride cavity is used for plating a silicon nitride film on the silicon wafer, and the silicon nitride film covers the surface of the aluminum oxide film, and the PECVD machine table passivation process further comprises the following steps:
(a) the silicon wafer enters an aluminum oxide cavity and a silicon nitride cavity of a PECVD machine after texturing, diffusion, SE laser, etching and annealing processes, and is sequentially plated with an aluminum oxide film and a silicon nitride film, wherein the process of the aluminum oxide cavity is unchanged;
(b) setting the process belt speed in the silicon nitride cavity at 250cm/min under 210-;
(c) setting the ammonia gas flow of the first gas circuit in the silicon nitride cavity as 650sccm for 500-plus, setting the silane flow as 400sccm for 300-plus, setting the ammonia gas flow of the second gas circuit in the silicon nitride cavity as 650sccm for 500-plus, setting the silane flow as 300sccm for 200-plus, setting the ammonia gas flow of the third, fourth and fifth gas circuits in the silicon nitride cavity as 800sccm for 600-plus, and setting the silane flow as 250sccm for 150-plus; setting the flow rates of the ammonia gas in the left, middle and right three sections of the sixth gas path to be 0-250sccm, 0-700sccm and 0-250sccm respectively; the flow rates of the left, middle and right three sections of silane are respectively set to be 0-100sccm, 0-250sccm and 0-100 sccm;
(d) setting microwave power of six air circuits in the silicon nitride cavity as 3800W and duty ratio as 8/9;
(e) and placing the silicon wafer with the back face upward on the rectangular graphite carrier plate coated with the film, and sequentially entering an aluminum oxide cavity and a silicon nitride cavity to be respectively coated with an aluminum oxide film and a silicon nitride film.
The PECVD machine can adopt a Maya back plating machine.
The silicon wafer can be a P-type monocrystalline silicon wafer or a polycrystalline silicon wafer.
The graphite carrier plate can adopt a rectangular graphite carrier plate which is 6 long and 4 wide and is loaded with 24 silicon wafers.
Due to the adoption of the technical scheme, the invention has the beneficial effects that:
(1) according to the method, the purpose of improving the conversion efficiency of the battery piece by the PECVD back passivation machine can be achieved only by comprehensively optimizing the silicon nitride bin film layer structure on the original PECVD machine, equipment investment is not needed, and the cost is saved;
(2) in the application, the process of the aluminum oxide cavity of the PECVD back passivation machine is not changed, only the film structure in the silicon nitride cavity needs to be improved, the original 2+3+1 mode is changed into the 1+1+3+1 mode, the compactness of a silicon nitride film is improved, the passivation effect on a silicon wafer is increased, the cell conversion efficiency of the prepared PERC solar cell is improved compared with that of the original process, and the process is simple and easy to realize;
(3) compared with the prior art, the battery conversion efficiency of the battery is improved by more than 0.04 percent compared with the prior art, the technical innovation and the large-scale production of the PERC battery can be actively promoted, and the battery has better economic benefit and social benefit.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments.
It should be understood that the maya PECVD machine can be independently coated with the aluminum oxide film, can be independently coated with the silicon nitride film, and can also be simultaneously coated with the aluminum oxide film and then the silicon nitride film.
It should be understood that under the existing process conditions, the thickness of the silicon nitride film on the back of the PERC solar cell is generally 60-100nm, and the process of the invention realizes the efficiency improvement of the PECVD back passivation machine by changing the process parameters on the premise of ensuring that the thickness of the silicon nitride film is not changed.
The technical scheme of the invention is further specifically explained by the following examples and comparative examples.
Example (b): by adopting the process of the invention
(1) A166 mm multiplied by 166mm specification P type monocrystalline silicon wafer with the resistivity of 0.4-1.1 omega-cm is used, after conventional texturing, diffusion, SE laser, etching and annealing, an aluminum oxide film and a silicon nitride film are sequentially plated by adopting a German Maya PECVD machine, wherein the process of an aluminum oxide cavity is not changed.
(2) The process belt speed in the silicon nitride cavity is set to be 250cm/min under the temperature of 350 ℃ and 450 ℃, and the process pressure is set to be 0.23-0.27 mbar.
(3) Setting the ammonia gas flow of the first gas path in the silicon nitride cavity as 650sccm, setting the silane flow as 300-400sccm, setting the ammonia gas flow of the second gas path in the silicon nitride cavity as 500-650sccm, setting the silane flow as 200-300sccm, setting the ammonia gas flow of the third, fourth and fifth gas paths in the silicon nitride cavity as 600-800sccm, and setting the silane flow as 150-250 sccm; setting the flow rates of the left, middle and right three sections of ammonia gas of the sixth gas path to be 0-250sccm, 0-700sccm and 0-250sccm respectively; the flow rates of the left, middle and right three sections of silane are set to be 0-100sccm, 0-250sccm and 0-100sccm respectively.
(4) The microwave power of six air circuits in the silicon nitride cavity is set to 3800W, and the duty ratio is set to 8/9.
(5) The back of a silicon chip is placed upwards on a rectangular graphite support plate coated with a film, the silicon chip sequentially enters an aluminum oxide cavity and a silicon nitride cavity to be respectively coated with an aluminum oxide film and a silicon nitride film, and the rectangular graphite support plate which is 6 pieces long and 4 pieces wide and is loaded with 24 pieces is adopted.
Comparative example: by using the existing processes
(1) A P-type monocrystalline silicon wafer with the resistivity of 0.4-1.1 omega-cm and the specification of 156.75mm multiplied by 156.75mm is used, an aluminum oxide film and a silicon nitride film are sequentially plated by a German Maya PECVD machine after the conventional texturing, the diffusion, the etching and the annealing, wherein the process of an aluminum oxide cavity is not changed.
(2) The process belt speed in the silicon nitride cavity is set to be 250cm/min under the temperature of 350 ℃ and 450 ℃, and the process pressure is set to be 0.23-0.27 mbar.
(3) Setting the ammonia gas flow of the first and second gas circuits in the silicon nitride cavity as 650sccm, setting the silane flow as 200-300sccm, setting the ammonia gas flow of the third, fourth and fifth gas circuits in the silicon nitride cavity as 600-800sccm, and setting the silane flow as 150-250 sccm; setting the flow rates of the left, middle and right three sections of ammonia gas of the sixth gas path to be 0-250sccm, 0-700sccm and 0-250sccm respectively; the flow rates of the left, middle and right three sections of silane are set to be 0-100sccm, 0-250sccm and 0-100sccm respectively.
(4) The microwave power of six air circuits in the silicon nitride cavity is set to 3800W, and the duty ratio is set to 8/9.
(5) The back of a silicon chip is placed upwards on a rectangular graphite support plate coated with a film, the silicon chip sequentially enters an aluminum oxide cavity and a silicon nitride cavity to be respectively coated with an aluminum oxide film and a silicon nitride film, and the rectangular graphite support plate which is 6 pieces long and 4 pieces wide and is loaded with 24 pieces is adopted.
First comparative test, silicon nitride film thickness comparison: the method comprises the following steps of adopting 12P-type monocrystalline silicon wafers made of the same batch of raw materials, respectively adopting the two processes for 6 wafers, taking out a silicon nitride film in a silicon nitride cavity of a Maya PECVD machine, and testing the thickness of the silicon nitride film by using an ellipsometer, wherein the thickness of the obtained silicon nitride film is shown in the following table:
therefore, the thickness of the silicon nitride film in the prior art is 64.21nm, the refractive index is 2.142, the thickness of the silicon nitride film in the process is 64.36nm, the refractive index is 2.147, and the thickness of the silicon nitride film obtained by the process adopted in the invention is within the range required by the normal process.
Second comparison test, electrical property comparison: 2000 pieces of P-type monocrystalline silicon pieces prepared from the same batch of raw materials are adopted, the two processes are respectively adopted for 1000 pieces, electrical parameters are tested by a Halm tester after conventional front surface coating, laser grooving and screen printing, and the obtained electrical parameters (taking an average value) are shown in the following table (carrying out four times of accurate comparison):
through comparison of the thick refractive indexes of the silicon nitride films, the thickness refractive index of the silicon nitride film is not changed greatly compared with that of the existing process, but the conversion efficiency of the battery is improved by more than 0.04 percent compared with that of the existing process, so that the silicon nitride films of the process not only completely meet the original requirement, but also improve the conversion efficiency of the battery.
Finally, it should be noted that the above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same, and although the present invention is described in detail with reference to the above-mentioned embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the specific embodiments of the present invention without departing from the spirit and scope of the present invention, and all the modifications or equivalent substitutions should be covered in the claims of the present invention.
Claims (4)
1. A PECVD machine passivation process for improving the conversion efficiency of a battery is characterized in that: the PECVD machine comprises a PECVD machine table, wherein the PECVD machine table comprises an aluminum oxide cavity and a silicon nitride cavity, the aluminum oxide cavity is used for plating an aluminum oxide film on a silicon wafer, the silicon nitride cavity is used for plating a silicon nitride film on the silicon wafer, and the silicon nitride film covers the surface of the aluminum oxide film, and the PECVD machine table further comprises the following steps:
(a) the silicon wafer enters an aluminum oxide cavity and a silicon nitride cavity of a PECVD machine after texturing, diffusion, SE laser, etching and annealing processes, and is sequentially plated with an aluminum oxide film and a silicon nitride film, wherein the process of the aluminum oxide cavity is unchanged;
(b) setting the process belt speed in the silicon nitride cavity at 250cm/min under 210-;
(c) setting the ammonia gas flow of the first gas circuit in the silicon nitride cavity as 650sccm for 500-plus, setting the silane flow as 400sccm for 300-plus, setting the ammonia gas flow of the second gas circuit in the silicon nitride cavity as 650sccm for 500-plus, setting the silane flow as 300sccm for 200-plus, setting the ammonia gas flow of the third, fourth and fifth gas circuits in the silicon nitride cavity as 800sccm for 600-plus, and setting the silane flow as 250sccm for 150-plus; setting the flow rates of the ammonia gas in the left, middle and right three sections of the sixth gas path to be 0-250sccm, 0-700sccm and 0-250sccm respectively; the flow rates of the left, middle and right three sections of silane are respectively set to be 0-100sccm, 0-250sccm and 0-100 sccm;
(d) setting microwave power of six air circuits in the silicon nitride cavity as 3800W and duty ratio as 8/9;
(e) and placing the silicon wafer with the back face upward on the rectangular graphite carrier plate coated with the film, and sequentially entering an aluminum oxide cavity and a silicon nitride cavity to be respectively coated with an aluminum oxide film and a silicon nitride film.
2. The passivation process of the PECVD machine for improving the conversion efficiency of the battery as claimed in claim 1, wherein: the PECVD machine can adopt a Maya back plating machine.
3. The passivation process of the PECVD machine for improving the conversion efficiency of the battery as claimed in claim 1, wherein: the silicon wafer can be a P-type monocrystalline silicon wafer or a polycrystalline silicon wafer.
4. The passivation process of the PECVD machine for improving the conversion efficiency of the battery as claimed in claim 1, wherein: the graphite carrier plate can adopt a rectangular graphite carrier plate which is 6 long and 4 wide and is loaded with 24 silicon wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011302354.3A CN112349815A (en) | 2020-11-19 | 2020-11-19 | PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving battery conversion efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011302354.3A CN112349815A (en) | 2020-11-19 | 2020-11-19 | PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving battery conversion efficiency |
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| Publication Number | Publication Date |
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| CN112349815A true CN112349815A (en) | 2021-02-09 |
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| CN202011302354.3A Withdrawn CN112349815A (en) | 2020-11-19 | 2020-11-19 | PECVD (plasma enhanced chemical vapor deposition) machine passivation process for improving battery conversion efficiency |
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2020
- 2020-11-19 CN CN202011302354.3A patent/CN112349815A/en not_active Withdrawn
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