CN103268954B - LiSiPON (lithium silicon phosphorus) lithium-ion battery solid electrolyte film, and preparation method and application thereof - Google Patents
LiSiPON (lithium silicon phosphorus) lithium-ion battery solid electrolyte film, and preparation method and application thereof Download PDFInfo
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- 229910012360 LiSiPON Inorganic materials 0.000 title claims abstract description 43
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910001416 lithium ion Inorganic materials 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000007784 solid electrolyte Substances 0.000 title claims abstract description 9
- WGHHJMWIRNYGQY-UHFFFAOYSA-N [P].[Si].[Li] Chemical compound [P].[Si].[Li] WGHHJMWIRNYGQY-UHFFFAOYSA-N 0.000 title 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 16
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- 239000000463 material Substances 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims description 63
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 12
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- 238000005137 deposition process Methods 0.000 claims description 8
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- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 claims description 6
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 49
- 239000010409 thin film Substances 0.000 abstract description 48
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 32
- 150000002500 ions Chemical class 0.000 abstract description 25
- 239000003792 electrolyte Substances 0.000 abstract description 24
- 229910018119 Li 3 PO 4 Inorganic materials 0.000 abstract description 23
- 238000000034 method Methods 0.000 abstract description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 14
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Abstract
本发明公开了一种LiSiPON锂离子电池固态电解质薄膜的制备方法。它是由N2:Ar体积流量比为1:5-1的离子束轰击Li3PO4和Si3N4,得到的厚为80nm~150nm 的LiSiPON薄膜。本发明同时公开了LiSiPON锂离子电池固态电解质薄膜在制备微型全固态锂电池材料方面的应用。通过实验得到提高N2的比例有效提高薄膜中的含氮量,并在最佳配比:氮氩流量比为1:1时,其离子电导率可达6.8×10-6S/cm。结合薄膜电极可组装为全固态薄膜锂离子电池,本发明所述的方法不仅成本低,工艺简单,而且制备的薄膜致密均匀,制备条件可控性强,便于规模商业化生产。The invention discloses a preparation method of a LiSiPON lithium ion battery solid electrolyte film. It is a LiSiPON film with a thickness of 80nm~150nm obtained by bombarding Li 3 PO 4 and Si 3 N 4 with an ion beam with a volume flow ratio of N 2 : Ar of 1: 5-1 . The invention also discloses the application of the LiSiPON lithium-ion battery solid-state electrolyte film in the preparation of miniature all-solid-state lithium battery materials. Through experiments, it is found that increasing the ratio of N 2 can effectively increase the nitrogen content in the film, and when the optimal ratio: the flow ratio of nitrogen and argon is 1:1, the ion conductivity can reach 6.8×10 -6 S/cm. Combined with thin-film electrodes, it can be assembled into an all-solid-state thin-film lithium-ion battery. The method of the present invention not only has low cost and simple process, but also the prepared thin film is dense and uniform, and the preparation conditions are highly controllable, which is convenient for large-scale commercial production.
Description
技术领域 technical field
本发明属于全固态薄膜锂离子电池技术领域。特别是涉及离子束辅助沉积(IBAD)技术制备LiSiPON,利用低能氮离子轰击由Li3PO4和Si3N4组成的复合靶而得到含氮量高的电解质薄膜。 The invention belongs to the technical field of all-solid-state thin-film lithium-ion batteries. In particular, it involves the preparation of LiSiPON by ion beam assisted deposition (IBAD), using low-energy nitrogen ions to bombard a composite target composed of Li 3 PO 4 and Si 3 N 4 to obtain an electrolyte film with high nitrogen content.
背景技术 Background technique
随着电子器件不断向微型化、轻量化方向发展,迫切要求微小尺寸的化学电源与之相匹配。特别是微电子机械系统(Micro-Electronic Mechanical Systems,MEMS)技术发展的需要,微电池已引起人们的重视。目前已开展研究的微电池系列有:微型锌镍电池,微型全固态锂电池,微型太阳电池,微型温差电池,微型燃料电池等。其中微型全固态锂电池被认为是最合适的电源之一,因为锂是最轻的金属元素,同时电负性最大,能够提供高比能量。这种电池有望用于小型卫星、便携式电子设备空间技术、国防工业等方面。全固体薄膜锂电池由于其比能量高、循环性能好及安全性高等方面的优点,适应了能源微型化、轻量化的要求,逐渐成为研究热点。 With the continuous development of electronic devices in the direction of miniaturization and light weight, there is an urgent need for micro-sized chemical power sources to match them. Especially for the development of Micro-Electronic Mechanical Systems (MEMS) technology, micro-batteries have attracted people's attention. The series of micro batteries that have been researched so far include: micro zinc-nickel batteries, micro all-solid lithium batteries, micro solar cells, micro thermoelectric batteries, micro fuel cells, etc. Among them, the miniature all-solid-state lithium battery is considered to be one of the most suitable power sources, because lithium is the lightest metal element and has the largest electronegativity, which can provide high specific energy. This kind of battery is expected to be used in small satellites, portable electronic equipment space technology, defense industry and so on. Due to its advantages of high specific energy, good cycle performance and high safety, all-solid-state thin-film lithium batteries meet the requirements of energy miniaturization and light weight, and have gradually become a research hotspot.
作为全固态薄膜锂离子电池的关键材料,固态电解质薄膜介于正负极之间,是传递离子的介质,因此必须具备高的离子电导率,低的电子电导率,宽的电化学窗口并且与正负极具有较好的稳定性,国内外已经报道了许多用于全固态薄膜锂电池的电极薄膜材料,但电解质薄膜的研究明显落后于电极薄膜。这已经成为限制全固态薄膜锂电池进一步完善和提高以及从实验室走向市场的沉重羁绊。因此,研制高性能、低成本的电解质薄膜对开发全固态薄膜电池具有非常重要的意义。 As the key material of all-solid-state thin-film lithium-ion batteries, the solid-state electrolyte film is between the positive and negative electrodes and is the medium for transferring ions. Therefore, it must have high ionic conductivity, low electronic conductivity, wide electrochemical window and The positive and negative electrodes have good stability. Many electrode film materials for all-solid-state thin-film lithium batteries have been reported at home and abroad, but the research on electrolyte films lags behind electrode films. This has become a heavy fetter that restricts the further improvement and improvement of all-solid-state thin-film lithium batteries and moves from the laboratory to the market. Therefore, the development of high-performance, low-cost electrolyte films is of great significance for the development of all-solid-state thin-film batteries.
1992年美国橡树岭国家实验室的Bates等首次报道一种比较稳定的无定性无机薄膜电解质材料锂磷氧氮(LiPON,Lithium phosphorous oxynitride),这种材料对提高薄膜锂电池的性能起了十分重要的作用。LiPON具有很好的电化学稳定性,室温电化学窗口(VS. Li)可达5.5V以上,这样宽的电化学窗口十分便于在实际应用过程的充放电;具有很高的热稳定性,在247~413K范围内不会发生相变化;电子电导率低于10-14S/cm,LiPON为电解质的薄膜电池在储存12个月时自放电微不足道。LiPON除了具有很高的电化学稳定性,机械稳定性也特别高,在循环过程中不会像阴极材料那样出现枝晶或裂化、粉末化现象。一般LiPON是在N2气氛下磁控溅射Li3PO4靶得到,在不同的实验条件下获得的LiPON化学组成不同,并且得出薄膜的电导率随反应气氛N2压强增加或LiPON中N含量的增加而增大。韩国S.J.Lee等以(1-x)Li3PO4·xLi2SiO3为靶材在氮气气氛下采用射频磁控溅射法制备了Li-Si-P-O-N氧氮化物薄膜电解质。研究发现,随着Si含量增加,薄膜离子电导率升高,最高达1.24×10-5S/cm。由于离子束辅助沉积可以精确控制束流强度和束流能量,得到氮含量较高的薄膜,从而进一步提高离子电导率。因此,文章采用考夫曼离子源低能离子束轰击Li3PO4和Si3N4复合靶制备LiSiPON。 In 1992, Bates et al. of Oak Ridge National Laboratory reported for the first time a relatively stable amorphous inorganic thin film electrolyte material LiPON (Lithium phosphorous oxynitride), which played a very important role in improving the performance of thin film lithium batteries. role. LiPON has good electrochemical stability, and the room temperature electrochemical window (VS. Li) can reach more than 5.5V. Such a wide electrochemical window is very convenient for charging and discharging in practical applications; There is no phase change in the range of 247-413K; the electronic conductivity is lower than 10 -14 S/cm, and the self-discharge of LiPON-based thin-film batteries is negligible when stored for 12 months. In addition to its high electrochemical stability, LiPON also has particularly high mechanical stability. During the cycle, it will not appear dendrites, cracking, or powdering like cathode materials. Generally, LiPON is obtained by magnetron sputtering Li 3 PO 4 target under N 2 atmosphere. The chemical composition of LiPON obtained under different experimental conditions is different, and it is concluded that the conductivity of the film increases with the pressure of N 2 in the reaction atmosphere or the N in LiPON increase with increasing content. South Korea SJLee et al. used (1-x)Li 3 PO 4 ·xLi 2 SiO 3 as the target material to prepare Li-Si-PON oxynitride thin film electrolyte by radio frequency magnetron sputtering under nitrogen atmosphere. The study found that with the increase of Si content, the ionic conductivity of the film increased, up to 1.24×10 -5 S/cm. Since the ion beam assisted deposition can precisely control the beam intensity and beam energy, a thin film with a higher nitrogen content can be obtained, thereby further improving the ion conductivity. Therefore, the article uses a Kaufmann ion source to bombard Li 3 PO 4 and Si 3 N 4 composite targets with low-energy ion beams to prepare LiSiPON.
发明内容 Contents of the invention
本发明通过设计复合靶来提高氮含量,将直径为50.8 mm的Li3PO4圆靶固定在边长为69.5mm的Si3N4方靶上面。采用Si3N4可以有效的引入Si元素,同时对薄膜成分没有其他影响,并且从靶材上可以溅射得到N,可以提高薄膜中的氮含量。由于Si的加入,改变LiPON的交联结构,进一步提高薄膜的稳定性和离子电导率。LiSiPON薄膜具有优良的稳定性、电化学性能,并且成本低,对环境无污染。这些优异的性能使其成为非常有应用潜力的薄膜电池电解质材料,在新能源材料领域具有很大的社会效益和潜在的经济效益。 In the present invention, the nitrogen content is increased by designing a composite target, and a Li 3 PO 4 round target with a diameter of 50.8 mm is fixed on a Si 3 N 4 square target with a side length of 69.5 mm. The use of Si 3 N 4 can effectively introduce Si elements without other effects on the film composition, and N can be sputtered from the target, which can increase the nitrogen content in the film. Due to the addition of Si, the cross-linked structure of LiPON is changed, and the stability and ionic conductivity of the film are further improved. LiSiPON thin film has excellent stability, electrochemical performance, and low cost, no pollution to the environment. These excellent properties make it a very potential thin-film battery electrolyte material, which has great social and potential economic benefits in the field of new energy materials.
为实现上述目的本发明公开了一种LiSiPON锂离子电池固态电解质薄膜。同时也公开了LiSiPON薄膜的制备方法。本发明的技术内容如下: To achieve the above object, the present invention discloses a LiSiPON lithium ion battery solid electrolyte film. At the same time, the preparation method of LiSiPON thin film is also disclosed. Technical content of the present invention is as follows:
一种LiSiPON锂离子电池固态电解质薄膜,其特征在于它是由N2:Ar体积流量比为1:5-1的离子束轰击Li3PO4和Si3N4,得到的厚为80nm~150nm 的LiSiPON薄膜。 A LiSiPON lithium-ion battery solid electrolyte film, characterized in that it is bombarded by ion beams with a N 2 : Ar volume flow ratio of 1:5-1 on Li 3 PO 4 and Si 3 N 4 , and the obtained thickness is 80nm~150nm LiSiPON film.
本发明所述LiSiPON锂离子电池固态电解质薄膜,优选氮氩流量的体积比为1:1。 The LiSiPON lithium-ion battery solid electrolyte film of the present invention preferably has a volume ratio of nitrogen and argon flow of 1:1.
本发明进一步公开了LiSiPON锂离子电池固态电解质薄膜的制备方法,其特征在于按如下的步骤进行: The present invention further discloses a preparation method of LiSiPON lithium-ion battery solid electrolyte film, which is characterized in that it is carried out according to the following steps:
(1)在沉积薄膜以前,将圆形Li3PO4靶固定于方形Si3N4靶上面,用Ar+溅射合成靶,同时用N+进行辅助轰击; (1) Before depositing the film, fix the circular Li 3 PO 4 target on the square Si 3 N 4 target, sputter the synthesized target with Ar + , and use N + for auxiliary bombardment;
(2)在单面抛光的(100)单晶硅片基底上沉积薄膜,采用机械泵和分子泵,控制实验时本底真空为2.8×10-4 Pa~3.0×10-4 Pa,气压值由电离规管来测量,沉积过程中溅射气体选用纯N2、Ar2,用质量流量控制器控制其流量为3标准毫升/分钟(sccm)~6 标准毫升/分钟(sccm);沉积过程中总的工作气压为1.0×10-2 Pa~1.2×10-2 Pa; (2) Thin films were deposited on single-sided polished (100) single-crystal silicon wafer substrates. Mechanical pumps and molecular pumps were used to control the background vacuum of 2.8×10 -4 Pa~3.0×10 -4 Pa during the experiment. Measured by the ionization gauge, pure N 2 and Ar 2 are selected as the sputtering gas during the deposition process, and the flow rate is controlled by a mass flow controller to be 3 standard milliliters/minute (sccm)~6 standard milliliters/minute (sccm); the deposition process The total working pressure is 1.0×10 -2 Pa~1.2×10 -2 Pa;
(3)实验控制N2和Ar的流量比在1:5~1:1。 (3) Experimentally control the flow ratio of N 2 and Ar at 1:5~1:1.
本发明所述的单面抛光的(100)单晶硅片,先依次用丙酮、乙醇超声清洗15分钟,吹干后立即送入真空沉积室中;在沉积薄膜以前,先用500eV,5mA的Ar+对样品进行清洗5 min~10min,沉积薄膜时,调节氮氩比并精确控制每个样品的溅射时间,溅射离子源工艺参数:溅射能量0.9keV~1.1keV,溅射束流15mA~20mA。 The (100) single-crystal silicon wafer of the single-side polishing of the present invention is first cleaned with acetone and ethanol ultrasonically for 15 minutes, and sent into the vacuum deposition chamber immediately after drying; Ar + cleans the sample for 5 min~10min. When depositing a thin film, adjust the nitrogen-argon ratio and accurately control the sputtering time of each sample. The process parameters of the sputtering ion source: sputtering energy 0.9keV~1.1keV, sputtering beam current 15mA~20mA.
本发明一个优选的LiSiPON锂离子电池固态电解质薄膜的制备方法如下: The preparation method of a preferred LiSiPON lithium-ion battery solid-state electrolyte film of the present invention is as follows:
利用FJL560CIZ型超高真空磁控与离子束联合溅射系统中的离子束辅助沉积设备,在沉积薄膜以前,将圆形Li3PO4固定于方形Si3N4靶上面,置于设备中溅射靶的位置。沉积薄膜时,可利用电脑程序设置精确控制靶材的溅射时间。基底为单面抛光的(100)单晶硅片,制膜前分别用丙酮和无水乙醇超声清洗15min,烘干后置于可转动的样品台上。镀膜时本底真空达2.8×10-4 Pa,Ar+溅射靶的同时,用低能N+进行辅助轰击,整个沉积过程中,总的工作气压保持在1.2×10-2 Pa。溅射离子源工艺参数:溅射能量1.1keV,溅射束流20mA。控制通入气体流量控制N2和Ar的流量比分别是1:1,溅射气体选用纯N2、Ar2,用质量流量控制器控制N2流量为2sccm,Ar流量为2sccm。溅射时间为2h,薄膜的厚度约为100nm。 Using the ion beam-assisted deposition equipment in the FJL560CIZ ultra-high vacuum magnetron and ion beam combined sputtering system, before depositing the thin film, the circular Li 3 PO 4 is fixed on the square Si 3 N 4 target, placed in the equipment for sputtering The location of the target. When depositing thin films, the computer program can be used to accurately control the sputtering time of the target. The substrate is a single-sided polished (100) single-crystal silicon wafer, which is ultrasonically cleaned with acetone and absolute ethanol for 15 minutes before film formation, and placed on a rotatable sample stage after drying. The background vacuum is up to 2.8×10 -4 Pa during film coating, while the Ar + sputtering target is supplemented by low energy N + bombardment, the total working pressure is kept at 1.2×10 -2 Pa during the whole deposition process. Sputtering ion source process parameters: sputtering energy 1.1keV, sputtering beam current 20mA. Control the flow rate of the incoming gas to control the flow ratio of N 2 and Ar to be 1:1, choose pure N 2 and Ar 2 as the sputtering gas, and use a mass flow controller to control the flow of N 2 to 2 sccm and the flow of Ar to 2 sccm. The sputtering time is 2h, and the thickness of the film is about 100nm.
本发明另一个优选的LiSiPON锂离子电池固态电解质薄膜的制备方法如下: The preparation method of another preferred LiSiPON lithium-ion battery solid-state electrolyte film of the present invention is as follows:
利用FJL560CIZ型超高真空磁控与离子束联合溅射系统中的离子束辅助沉积设备,在沉积薄膜以前,将圆形Li3PO4固定于方形Si3N4靶上面,置于设备中溅射靶的位置。沉积薄膜时,可利用电脑程序设置精确控制靶材的溅射时间。基底为单面抛光的(100)单晶硅片,制膜前分别用丙酮和无水乙醇超声清洗15min,烘干后置于可转动的样品台上。镀膜时本底真空高于3×10-4 Pa,Ar+溅射靶的同时,用低能N+进行辅助轰击,整个沉积过程中,总的工作气压保持在1.2×10-2 Pa。溅射离子源工艺参数:溅射能量1.1keV,溅射束流20mA。控制通入气体流量控制N2和Ar的流量比分别是1:2,溅射气体选用纯N2、Ar2,用质量流量控制器控制N2流量为1sccm,Ar流量为2sccm。溅射时间为2h,薄膜的厚度约为100nm。 Using the ion beam-assisted deposition equipment in the FJL560CIZ ultra-high vacuum magnetron and ion beam combined sputtering system, before depositing the thin film, the circular Li 3 PO 4 is fixed on the square Si 3 N 4 target, placed in the equipment for sputtering The position of the target. When depositing thin films, the computer program can be used to accurately control the sputtering time of the target. The substrate is a single-sided polished (100) single-crystal silicon wafer, which is ultrasonically cleaned with acetone and absolute ethanol for 15 minutes before film formation, and placed on a rotatable sample stage after drying. When coating, the background vacuum is higher than 3×10 -4 Pa, while the Ar + sputtering target is assisted with low-energy N + bombardment, the total working pressure is kept at 1.2×10 -2 Pa throughout the deposition process. Sputtering ion source process parameters: sputtering energy 1.1keV, sputtering beam current 20mA. Control the flow rate of the incoming gas to control the flow ratio of N 2 and Ar to be 1:2, select pure N 2 and Ar 2 as the sputtering gas, and use a mass flow controller to control the flow of N 2 to 1 sccm and the flow of Ar to 2 sccm. The sputtering time is 2h, and the thickness of the film is about 100nm.
本发明制备的LiSiPON薄膜测试的方法如下: The method of LiSiPON film test prepared by the present invention is as follows:
本发明充分利用离子束的轰击作用,精确控制薄膜组成,得到平滑致密的薄膜。本实验是在三种不同的氮氩比情况下制备薄膜,进行结构测试,稳定性测试和电化学测试。得出每一条件下的实验结果并且进行一系列性能分析,得出了电化学性能比较好的氮氩比。本发明对合成的薄膜进行了X射线衍射(XRD)结构分析,X射线能量色散谱(EDS)分析,X射线光电子能谱(XPS)分析,采用真空管式炉 (OTF-1200X)测试薄膜在不同氧浓度下的稳定性,利用电化学工作站进行交流阻抗测试。 The invention makes full use of the bombardment effect of the ion beam, precisely controls the composition of the film, and obtains a smooth and dense film. In this experiment, thin films were prepared under three different ratios of nitrogen and argon, and structural tests, stability tests and electrochemical tests were carried out. The experimental results under each condition were obtained and a series of performance analyzes were carried out, and the nitrogen-argon ratio with better electrochemical performance was obtained. The present invention carries out X-ray diffraction (XRD) structure analysis, X-ray energy dispersive spectrum (EDS) analysis, X-ray photoelectron energy spectrum (XPS) analysis to the synthetic thin film, adopts vacuum tube furnace (OTF-1200X) to test thin film in different Stability under oxygen concentration, using electrochemical workstation for AC impedance test.
本发明涉及利用离子束辅助沉积技术(IBAD),设计利用复合靶,制备一种新型薄膜锂电电解质薄膜,锂离子电导率可达6.8×10-6S/cm,利用离子束辅助沉积技术,控制通入气体氮氩流量比,其目的是为找到气体流量与薄膜中含氮量的关系。用Ar+轰击Li3PO4和Si3N4组成的复合靶,在单面抛光的Si(100)基底上沉积薄膜,采用机械泵和分子泵,本底真空2.8×10-4 Pa~3.0×10-4 Pa,气压值由电离规管来测量,沉积过程中溅射气体选用纯Ar和N2。用质量流量控制器控制其流量为3sccm~6 sccm;沉积过程中工作气压约为1.2×10-2 Pa,溅射离子源工艺参数:溅射能量0.9keV~1.1keV,溅射束流15mA~20mA。其工艺参数:放电电压:40V~45V,放电电流:0.4A~0.8A,灯丝电流:6A~8A,加速电压:190V ~200V,加速电流:1mA ~4mA。 The invention relates to the use of ion beam assisted deposition technology (IBAD), design and use of composite targets to prepare a new type of thin film lithium electrolyte film, the conductivity of lithium ions can reach 6.8×10 -6 S/cm, and use ion beam assisted deposition technology to control The purpose of feeding gas nitrogen and argon flow ratio is to find the relationship between gas flow and nitrogen content in the film. Bombard a composite target composed of Li 3 PO 4 and Si 3 N 4 with Ar + , and deposit thin films on a single-sided polished Si (100) substrate, using mechanical pumps and molecular pumps, with a background vacuum of 2.8×10 -4 Pa~3.0 ×10 -4 Pa, the pressure value is measured by the ionization gauge, and the sputtering gas used in the deposition process is pure Ar and N 2 . The mass flow controller is used to control the flow rate to 3sccm~6 sccm; the working pressure during the deposition process is about 1.2×10 -2 Pa, and the process parameters of the sputtering ion source are: sputtering energy 0.9keV~1.1keV, sputtering beam current 15mA~ 20mA. Its process parameters: discharge voltage: 40V~45V, discharge current: 0.4A~0.8A, filament current: 6A~8A, acceleration voltage: 190V ~200V, acceleration current: 1mA ~4mA.
本发明的测试的结果: Results of the tests of the present invention:
图1为由Li3PO4和Si3N4组成的复合靶示意图,图2为Au/ LiSiPON /Au三明治结构示意图(俯视图和侧视图),用于进行离子电导率的测定;图3为LiSiPON薄膜的XRD衍射图谱,显示薄膜的主要形态为非晶态,非晶薄膜的骨架中具有较多的空隙便于锂离子运输和传导;图4为LiSiPON薄膜的能量色散图谱及三种样品中所含元素分析,该图显示了低能氮离子轰击有效的将N和Si注入薄膜,其中氮氩比为1:1时,薄膜中含氮量最高,其次为氮氩比为1:2;图5电解质薄膜的XPS图谱,可以看到N已经进入到了Li3PO4分子框架中,形成交错互连的P—N< 结构对提高Li+的迁移率有贡献;图6表示了1#的交流阻抗谱,相对高的氮含量有利于提高其离子电导率。 Figure 1 is a schematic diagram of a composite target composed of Li 3 PO 4 and Si 3 N 4 , Figure 2 is a schematic diagram of the Au/LiSiPON/Au sandwich structure (top view and side view), which is used for the determination of ionic conductivity; Figure 3 is LiSiPON The XRD diffraction pattern of the film shows that the main form of the film is amorphous, and there are more gaps in the framework of the amorphous film to facilitate the transport and conduction of lithium ions; Elemental analysis, the figure shows that the bombardment of low-energy nitrogen ions effectively implants N and Si into the film. When the nitrogen-argon ratio is 1:1, the nitrogen content in the film is the highest, followed by the nitrogen-argon ratio of 1:2; Figure 5 Electrolyte From the XPS spectrum of the film, it can be seen that N has entered into the Li 3 PO 4 molecular framework, and the formation of interlaced P—N< structure contributes to the improvement of the mobility of Li + ; Figure 6 shows the AC impedance spectrum of 1# , the relatively high nitrogen content is beneficial to improve its ionic conductivity.
本发明制备的LiSiPON薄膜产品的性能如下: The performance of the LiSiPON film product prepared by the present invention is as follows:
通过实验得到提高N2的通入量有效提高薄膜中的含氮量,不同条件下的薄膜中均含有大量Si。并在最佳配比:氮氩流量比为1:1时测量其离子电导率,可达6.8×10-6S/cm。制备的LiSiPON薄膜由于Si和N的引入改变正磷酸盐阴离子的分布并形成交错互连结构,非晶薄膜的骨架中具有较多的空隙便于锂离子运动和传导,降低锂离子迁移的活化能,从而提高锂离子电导率。 Through experiments, it is found that increasing the amount of N 2 can effectively increase the nitrogen content in the film, and the films under different conditions all contain a large amount of Si. And when the optimal ratio: the flow ratio of nitrogen and argon is 1:1, the ion conductivity can reach 6.8×10 -6 S/cm. The prepared LiSiPON film changes the distribution of orthophosphate anions and forms an interlaced interconnection structure due to the introduction of Si and N. The skeleton of the amorphous film has more voids to facilitate the movement and conduction of lithium ions, reducing the activation energy of lithium ion migration. Thereby improving the lithium ion conductivity.
以上结果证明:本发明“用离子束辅助沉积技术制备的薄膜锂电电解质LiSiPON”具有良好的电化学性质,进一步优化制作工艺,改善薄膜性能,在进一步开发全固态薄膜电池中将有重要的应用前景。 The above results prove that the "thin-film lithium electrolyte LiSiPON prepared by ion beam assisted deposition technology" of the present invention has good electrochemical properties, further optimizes the manufacturing process, improves the performance of the film, and will have important application prospects in the further development of all-solid-state thin-film batteries .
本发明更进一步公开了LiSiPON锂离子电池固态电解质薄膜在制备微型全固态锂电池材料方面的应用。 The invention further discloses the application of the LiSiPON lithium-ion battery solid-state electrolyte film in the preparation of miniature all-solid-state lithium battery materials.
大量便携式消费电子器件,诸如移动电话、照相机和笔记本电脑的小型化,迫切要求开发与此相匹配的薄膜电池。在薄膜电极材料方面取得的成果比较丰富,而对于电解质材料的研究就稍逊一筹。本发明提供的LiSiPON的制备方法可以应用于全固态薄膜锂电池中作为电解质薄膜。此方法采用离子束辅助沉积可以有效的避免用磁控溅射镀膜易造成靶受热不均而破裂的情况,而采用电子束蒸发镀膜需要用钨舟熔化Li3PO4原料,会引入钨元素的污染;并且制备过程易控制,对环境无污染,这对实际生产具有重要意义。同时采用低能氮离子束轰击可以得到氮含量较高的薄膜,通过对靶材的简单叠加掺入硅元素,从而有效的提高了电解质薄膜的离子电导率,交流阻抗技术测得锂离子电导率为6.8×10-6S/cm,高于J.B.Bates et al.使用磁控溅射制备的LiPON的离子电导率。由于Si的掺入,薄膜的稳定性得到了提高,物理性质和化学性质均得到了明显改善,成本较低,有望在以后薄膜电池的商业化生产中投入使用。 The miniaturization of a large number of portable consumer electronic devices, such as mobile phones, cameras and notebook computers, urgently requires the development of matching thin-film batteries. The results obtained in thin film electrode materials are relatively abundant, while the research on electrolyte materials is slightly inferior. The preparation method of LiSiPON provided by the invention can be applied to all solid-state thin-film lithium batteries as an electrolyte film. This method uses ion beam assisted deposition to effectively avoid the situation that magnetron sputtering coating is easy to cause uneven heating and cracking of the target, while electron beam evaporation coating needs to use tungsten boat to melt Li 3 PO 4 raw material, which will introduce tungsten element Pollution; and the preparation process is easy to control and has no pollution to the environment, which is of great significance to actual production. At the same time, a film with a high nitrogen content can be obtained by bombarding with a low-energy nitrogen ion beam. By simply superimposing the target material and doping silicon, the ion conductivity of the electrolyte film is effectively improved. The lithium ion conductivity measured by the AC impedance technique is 6.8×10 -6 S/cm, higher than the ionic conductivity of LiPON prepared by JBBates et al. using magnetron sputtering. Due to the incorporation of Si, the stability of the film has been improved, the physical and chemical properties have been significantly improved, and the cost is low. It is expected to be put into use in the commercial production of thin film batteries in the future.
附图说明 Description of drawings
图1:本系列中Li3PO4和Si3N4组成的复合靶示意图; Figure 1: Schematic diagram of the composite target composed of Li 3 PO 4 and Si 3 N 4 in this series;
图2:本系列中Au/ LiSiPON /Au三明治结构示意图(俯视图和侧视图); Figure 2: Schematic diagram of the Au/LiSiPON/Au sandwich structure in this series (top view and side view);
图3:本系列中LiSiPON薄膜的XRD衍射图谱; Figure 3: XRD diffraction patterns of LiSiPON films in this series;
图4:本系列中LiSiPON薄膜的能量色散图谱及元素含量表; Figure 4: Energy dispersive spectrum and element content table of LiSiPON thin films in this series;
图5:本系列中LiSiPON薄膜的XPS图谱; Figure 5: XPS spectra of LiSiPON films in this series;
图6:本系列中Au/ LiSiPON /Au的交流阻抗谱; Figure 6: AC impedance spectrum of Au/ LiSiPON /Au in this series;
图7:FJL560CI2型超高真空射频磁控与离子束联合溅射系统; Figure 7: FJL560CI2 ultra-high vacuum RF magnetron and ion beam combined sputtering system;
其中1.分子泵,2.可旋转水冷靶台,3. Li3PO4和Si3N4靶,4.辅助靶,5.溅射离子源,6.低能辅助轰击源,7.气体入口,8.样品挡板,9.可旋转水冷样品台,10.样品。 1. Molecular pump, 2. Rotatable water-cooled target platform, 3. Li 3 PO 4 and Si 3 N 4 targets, 4. Auxiliary target, 5. Sputtering ion source, 6. Low energy auxiliary bombardment source, 7. Gas inlet , 8. Sample baffle, 9. Rotatable water-cooled sample stage, 10. Sample.
具体实施方式: Detailed ways:
下面结合具体实施例对本发明做进一步说明,下述各实施例仅用于说明本发明而并非对本发明的限制。 The present invention will be further described below in conjunction with specific examples, and the following examples are only used to illustrate the present invention rather than limit the present invention.
为能进一步了解本发明的内容、特点及功效,配合附图说明如下: In order to further understand the content, characteristics and effects of the present invention, the description is as follows in conjunction with the accompanying drawings:
使用设备:FJL560CI2型超高真空射频磁控与离子束联合溅射系统用来合成LiSiPON电解质薄膜,该系统是由天津师范大学与中国科学院沈阳科学仪器厂联合研制,其结构如图7所示。溅射靶材为直径50.9 mm、厚度3 mm的99.99%高纯度圆形Li3PO4靶和边长69.5×69.5mm、厚度3mm的99.99%高纯度方形Si3N4靶。将圆形Li3PO4靶固定于方形Si3N4靶上,组成复合靶。样品放置在真空室内可控样品旋转转盘样品台10上;泵抽系统由机械泵和HTFB涡轮分子泵1完成,气压值由电离规管来测量,Ar经气进气口7进入真空室,Ar和N2的进气流量是通过质量流量计来控制的。电脑程序精确控制每个样品的溅射时间。不同样品采用相同的轰击能量和离子源参数。 Equipment used: FJL560CI2 ultra-high vacuum radio frequency magnetron and ion beam combined sputtering system is used to synthesize LiSiPON electrolyte thin film. This system is jointly developed by Tianjin Normal University and Shenyang Scientific Instrument Factory of Chinese Academy of Sciences. Its structure is shown in Figure 7. The sputtering target is a 99.99% high-purity circular Li 3 PO 4 target with a diameter of 50.9 mm and a thickness of 3 mm, and a 99.99% high-purity square Si 3 N 4 target with a side length of 69.5×69.5 mm and a thickness of 3 mm. The circular Li 3 PO 4 target was fixed on the square Si 3 N 4 target to form a composite target. The sample is placed on the controllable sample rotating turntable sample stage 10 in the vacuum chamber; the pumping system is completed by the mechanical pump and the HTFB turbomolecular pump 1, the air pressure value is measured by the ionization gauge, Ar enters the vacuum chamber through the gas inlet 7, and the Ar And the intake flow of N2 is controlled by mass flow meter. A computer program precisely controls the sputtering time for each sample. The same bombardment energy and ion source parameters were used for different samples.
具体的合成工艺参数:Specific synthetic process parameters:
N2流量分别为:2sccm,1sccm,0.4sccm;Ar流量保持在2sccm;(氮氩比分别为1:1,1:2,1:5)。本底真空度:2.8×10-4 Pa;工作气压:0.012 Pa;溅射离子源工艺参数:溅射能量1.1keV,溅射束流20mA。其工艺参数:放电电压:40V,放电电流:0.8A,灯丝电流:7A,加速电压:200V,加速电流:4mA。需要说明的是:其他型号的离子束辅助沉积(IBAD)设备都可以使用。 The N 2 flows are: 2sccm, 1sccm, 0.4sccm; the Ar flow is kept at 2sccm; (Nitrogen and Argon ratios are 1:1, 1:2, 1:5). Background vacuum: 2.8×10 -4 Pa; working pressure: 0.012 Pa; sputtering ion source process parameters: sputtering energy 1.1keV, sputtering beam current 20mA. Its process parameters: discharge voltage: 40V, discharge current: 0.8A, filament current: 7A, acceleration voltage: 200V, acceleration current: 4mA. It should be noted that other models of ion beam assisted deposition (IBAD) equipment can be used.
实施例1 Example 1
调节Ar,N2流量比合成LiSiPON电解质薄膜: Synthesize LiSiPON electrolyte film by adjusting Ar, N flow ratio:
(1)实验前依次用丙酮和无水酒精对Si片超声清洗15 min,烘干后放进镀膜室。 (1) Before the experiment, the Si wafer was ultrasonically cleaned with acetone and absolute alcohol for 15 min, dried and put into the coating chamber.
(2)将圆形Li3PO4靶固定于方形Si3N4靶上,置于真空室内的靶台A上,对腔室抽真空,使腔室内的本底真空度在2.8×10-4 Pa。 (2) Fix the circular Li 3 PO 4 target on the square Si 3 N 4 target, place it on the target platform A in the vacuum chamber, and evacuate the chamber so that the background vacuum in the chamber is 2.8×10 - 4Pa .
(3)用质量流量流量计控制Ar进气流量,使之保持在20sccm左右,打开离子枪电源,溅射能量500eV,溅射束流20mA,加速电流5mA。对样品至少轰击清洗5 min。关闭离子枪电源。 (3) Use a mass flow meter to control the Ar intake flow rate to keep it at about 20 sccm, turn on the ion gun power supply, sputtering energy 500eV, sputtering beam current 20mA, and accelerating current 5mA. Bombard the samples for at least 5 min. Power off the ion gun.
(4)打开溅射离子源,用质量流量流量计控制Ar进气流量,使之保持在2sccm左右,打开N2进气阀,分别控制流量为2sccm、1sccm、0.4sccm,对应样品为1#、2#、3#。溅射能量为1.1keV,溅射束流为20mA。加速电压为200V,加速电流为4mA。 (4) Turn on the sputtering ion source, control the Ar intake flow rate with a mass flow meter to keep it at about 2 sccm, open the N 2 intake valve, and control the flow rate to 2 sccm, 1 sccm, and 0.4 sccm respectively, and the corresponding sample is 1# , 2#, 3#. The sputtering energy is 1.1keV, and the sputtering beam current is 20mA. The accelerating voltage is 200V, and the accelerating current is 4mA.
(5)此时保持工作气压在0.012 Pa左右。用电脑程序控制每个样品的溅射时间为2个小时。通过改变每个样品的通入气体流量比可以得到不同样品的薄膜。 (5) At this time, keep the working air pressure at about 0.012 Pa. The sputtering time of each sample was controlled by a computer program to be 2 hours. Films of different samples can be obtained by changing the ratio of the gas flow rate of each sample.
(6)薄膜在高真空室内,直到温度降到100℃以下才打开腔室取出。 (6) The film is in the high vacuum chamber, and the chamber is not opened until the temperature drops below 100°C.
调节Ar,N2流量比合成LiSiPON电解质薄膜: Synthesize LiSiPON electrolyte film by adjusting Ar, N flow ratio:
沉积参数:N2流量分别为:2sccm,1sccm,0.4sccm;Ar流量保持在2sccm;本底真空度:2.8×10-4 Pa;工作气压:0.012 Pa;溅射离子源工艺参数:溅射能量1.1keV,溅射束流20mA。其工艺参数:放电电压:40V,放电电流:0.8A,灯丝电流:7A,加速电压:200V,加速电流:4mA。沉积时间控制在7200s左右。 Deposition parameters: N 2 flow rate: 2sccm, 1sccm, 0.4sccm; Ar flow rate maintained at 2sccm; background vacuum: 2.8×10 -4 Pa; working pressure: 0.012 Pa; sputtering ion source process parameters: sputtering energy 1.1keV, sputtering beam current 20mA. Its process parameters: discharge voltage: 40V, discharge current: 0.8A, filament current: 7A, acceleration voltage: 200V, acceleration current: 4mA. The deposition time is controlled at about 7200s.
对于最佳条件,实验前的准备工作上如步骤(1)~(3)所述,以后按步骤(4)所示,改变氮氩比来沉积不同氮含量的薄膜。得到的薄膜置于干燥箱中保存,以备进行膜厚、结构、元素含量等的测试。 For the optimal conditions, the preparatory work before the experiment is as described in steps (1) to (3), and then as shown in step (4), change the ratio of nitrogen to argon to deposit films with different nitrogen contents. The obtained film was stored in a dry box for testing of film thickness, structure, element content, etc.
实施例2 Example 2
出于测量薄膜电解质的离子电导率的目的,在Si(100)基片上依次沉积了Au、LiSiPON薄膜和Au,形成Au/LiSiPON/Au“三明治”结构(如图2)。具体实施步骤如下: For the purpose of measuring the ionic conductivity of the thin film electrolyte, Au, LiSiPON film and Au were sequentially deposited on the Si(100) substrate to form an Au/LiSiPON/Au "sandwich" structure (as shown in Figure 2). The specific implementation steps are as follows:
(1)实验前将溅射靶位调为Au靶,依次用丙酮和无水酒精对Si片超声清洗15 min,烘干后放进镀膜室。 (1) Before the experiment, the sputtering target was adjusted to the Au target, and the Si wafer was ultrasonically cleaned with acetone and absolute alcohol for 15 min, dried and put into the coating chamber.
(2)对腔室抽真空,使腔室内的本底真空度在2.8×10-4 Pa。 (2) Vacuum the chamber so that the background vacuum in the chamber is 2.8×10 -4 Pa.
(3)用质量流量流量计控制Ar进气流量,使之保持在20sccm左右,打开离子枪电源,溅射能量500eV,溅射束流20mA,加速电流5mA。对样品至少轰击清洗5 min。关闭离子枪电源。 (3) Use a mass flow meter to control the Ar intake flow rate to keep it at about 20 sccm, turn on the ion gun power supply, sputtering energy 500eV, sputtering beam current 20mA, and accelerating current 5mA. Bombard the samples for at least 5 min. Power off the ion gun.
(4)打开溅射离子源,用质量流量流量计控制Ar进气流量,使之保持在20sccm左右。溅射能量为1keV,溅射束流为20mA。加速电压为200V,加速电流为2mA。溅射时间为1h。 (4) Turn on the sputtering ion source, and use a mass flow meter to control the Ar intake flow to keep it at about 20 sccm. The sputtering energy is 1keV, and the sputtering beam current is 20mA. The accelerating voltage is 200V, and the accelerating current is 2mA. Sputtering time is 1h.
(5)将溅射靶位调为Li3PO4和Si3N4复合靶(如实施例1所述),打开溅射离子源,调节Ar流量为2sccm,N2流量为2sccm,溅射能量为1.1keV,溅射束流为20mA。加速电压为200V,加速电流为4mA。溅射时间为2h。 (5) Adjust the sputtering target to the composite target of Li 3 PO 4 and Si 3 N 4 (as described in Example 1), turn on the sputtering ion source, adjust the flow rate of Ar to 2 sccm, and the flow rate of N 2 to 2 sccm, and sputter The energy is 1.1keV, and the sputtering beam current is 20mA. The accelerating voltage is 200V, and the accelerating current is 4mA. Sputtering time is 2h.
(6)电脑控制将溅射靶位调为Au靶,打开溅射离子源,控制Ar流量为20sccm。溅射能量为1keV,溅射束流为20mA。加速电压为200V,加速电流为2mA。溅射时间为1h。 (6) The sputtering target position is adjusted to the Au target by computer control, the sputtering ion source is turned on, and the Ar flow rate is controlled to 20 sccm. The sputtering energy is 1keV, and the sputtering beam current is 20mA. The accelerating voltage is 200V, and the accelerating current is 2mA. Sputtering time is 1h.
(7)薄膜在高真空室内,直到温度降到100℃以下才打开腔室取出。 (7) The film is in the high vacuum chamber, and the chamber is not opened until the temperature drops below 100°C.
本发明对各种工艺条件下合成的薄膜分别利用了美国MTS的纳米力学测试系统、X射线衍射(XRD)仪、X射线能量色散谱(EDS)分析仪、X射线光电子能谱(XPS)分析仪进行了包括薄膜厚度、结构、化学组成、元素含量等物理性质进行了表征。在实验中利用普林斯顿VersaSTAT4多功能电化学工作站对LiSiPON薄膜进行交流阻抗分析,测量频率为0.1Hz到100KHz。测试的数据结果见下表,主要结果如下: The present invention uses the nanomechanical testing system of MTS, X-ray diffraction (XRD) instrument, X-ray energy dispersive spectrum (EDS) analyzer, and X-ray photoelectron spectroscopy (XPS) analysis for the films synthesized under various process conditions. The physical properties including film thickness, structure, chemical composition and element content were characterized by the instrument. In the experiment, the Princeton VersaSTAT4 multifunctional electrochemical workstation was used to conduct AC impedance analysis on the LiSiPON film, and the measurement frequency was from 0.1 Hz to 100 KHz. The test data results are shown in the table below, the main results are as follows:
1、就物理性质来说:LiSiPON薄膜同LiPON一样,呈现非晶态结构。提高N2的通入量有效提高薄膜中的含氮量,不同条件下的薄膜中均含有大量Si。XPS图谱显示N在薄膜中呈现两种不同结构。 1. In terms of physical properties: LiSiPON thin film, like LiPON, presents an amorphous structure. Increasing the amount of N 2 can effectively increase the nitrogen content in the film, and the films under different conditions all contain a lot of Si. XPS patterns show that N presents two different structures in the film.
2、就化学性质来说:氮含量相对较高的薄膜具有比较高的离子电导率,为6.8×10-6S/cm,N的引入提高了原有体系的离子电导率,随着N2流量的增加,电解质薄膜中的N含量和离子电导率同步的增加,进一步证实了薄膜中的含氮量影响锂离子的运输和迁移,从而影响电导率。 2. In terms of chemical properties: films with relatively high nitrogen content have relatively high ionic conductivity, which is 6.8×10 -6 S/cm. The introduction of N improves the ionic conductivity of the original system. As N 2 The increase of the flow rate, the simultaneous increase of the N content and the ionic conductivity in the electrolyte film further confirmed that the nitrogen content in the film affects the transport and migration of lithium ions, thereby affecting the conductivity.
总体来讲:利用低能氮离子轰击Li3PO4和Si3N4组成的复合靶可得到致密均匀的薄膜电解质LiSiPON,结构成分和化学组成的测试证明薄膜中的含N量与N2流量成正比,N和Si的掺入有利于电导率的提高。N2:Ar为1:1时,薄膜中含氮量最高,此时离子电导率可达6.8×10-6S/cm,为薄膜锂离子电池的投入使用提供了基础。进一步通过控制工艺参数可以制备出具有优良的物理特性和电化学特性的电解质薄膜。 In general: The composite target composed of Li 3 PO 4 and Si 3 N 4 can be bombarded with low-energy nitrogen ions to obtain a dense and uniform thin film electrolyte LiSiPON. The test of structural composition and chemical composition proves that the N content in the film is proportional to the N 2 flow rate. In direct proportion, the doping of N and Si is beneficial to the improvement of electrical conductivity. When the N 2 :Ar ratio is 1:1, the nitrogen content in the film is the highest, and the ion conductivity can reach 6.8×10 -6 S/cm, which provides a basis for the application of thin film lithium-ion batteries. Further, the electrolyte film with excellent physical and electrochemical properties can be prepared by controlling the process parameters.
实施例3 Example 3
LiSiPON在全固态薄膜锂电池中作为电解质薄膜的应用 Application of LiSiPON as Electrolyte Film in All-Solid Thin Film Lithium Batteries
全固态薄膜电池LiCoO2/LiSiPON/Li的制备 Preparation of LiCoO 2 /LiSiPON/Li All-Solid Thin Film Battery
(1)实验前用射频磁控溅射在Si(110)基片上镀LiCoO2薄膜电极,溅射时间为4h。 (1) LiCoO 2 thin film electrodes were plated on Si(110) substrates by radio frequency magnetron sputtering before the experiment, and the sputtering time was 4h.
(2)使用离子束辅助沉积设备镀薄膜电解质,将溅射靶位调为Li3PO4和Si3N4复合靶(如实施例1所述),对腔室抽真空,使腔室内的本底真空度在2.8×10-4 Pa。 (2) Use ion beam assisted deposition equipment to coat thin film electrolyte, adjust the sputtering target to Li 3 PO 4 and Si 3 N 4 composite target (as described in Example 1), and vacuum the chamber to make the The background vacuum is 2.8×10 -4 Pa.
(3)打开溅射离子源,调节Ar流量为2sccm,N2流量为2sccm,溅射能量为1.1keV,溅射束流为20mA。加速电压为200V,加速电流为4mA。溅射时间为5h。 (3) Turn on the sputtering ion source, adjust the Ar flow rate to 2 sccm, the N 2 flow rate to 2 sccm, the sputtering energy to 1.1keV, and the sputtering beam current to 20mA. The accelerating voltage is 200V, and the accelerating current is 4mA. Sputtering time is 5h.
(4)薄膜在高真空室内,直到温度降到100℃以下才打开腔室取出。 (4) The film is in the high vacuum chamber, and the chamber is not opened until the temperature drops below 100°C.
(5)将薄膜置于真空热蒸发设备中,蒸镀金属锂薄膜电极,蒸镀时间为1h。 (5) Place the thin film in a vacuum thermal evaporation equipment, and vapor-deposit metal lithium thin-film electrodes for 1 h.
(6)采用射频磁控溅射在薄膜上溅射Li3PO4薄膜作为保护层,约1h。至此组装成完整的全固态薄膜锂离子电池。 (6) Use RF magnetron sputtering to sputter Li 3 PO 4 film on the film as a protective layer for about 1h. So far assembled into a complete all-solid-state thin-film lithium-ion battery.
本发明公开和提出的离子束辅助沉积(IBAD)法制备LiSiPON薄膜,在合适的氮氩气体流量比的条件下,可以得到电化学性能较好的电解质薄膜,离子电导率可达6.8×10-6S/cm,可以应用于薄膜锂离子电池的制备。 The LiSiPON film prepared by the ion beam assisted deposition (IBAD) method disclosed and proposed by the present invention can obtain an electrolyte film with better electrochemical performance under the condition of a suitable nitrogen-argon gas flow ratio, and the ion conductivity can reach 6.8×10 - 6 S/cm, which can be applied to the preparation of thin-film lithium-ion batteries.
本领域技术人员可通过借鉴本文内容,适当改变原料、工艺参数等环节实现。本发明的方法与产品已通过较佳实施例子进行了描述,相关技术人员明显能在不脱离本发明内容、精神和范围内对本文所述的方法和产品进行改动或适当变更与组合,来实现本发明技术。特别需要指出的是,所有相类似的替换和改动对本领域技术人员来说是显而易见的,他们都被视为包括在本发明精神、范围和内容中。 Those skilled in the art can realize it by referring to the content of this article and appropriately changing the raw materials and process parameters. The methods and products of the present invention have been described through preferred implementation examples, and those skilled in the art can obviously make changes or appropriate changes and combinations to the methods and products described herein without departing from the content, spirit and scope of the present invention to realize The technology of the present invention. In particular, it should be pointed out that all similar substitutions and modifications will be obvious to those skilled in the art, and they are all considered to be included in the spirit, scope and content of the present invention.
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