CN103556125A - Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film - Google Patents
Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film Download PDFInfo
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- CN103556125A CN103556125A CN201310519874.3A CN201310519874A CN103556125A CN 103556125 A CN103556125 A CN 103556125A CN 201310519874 A CN201310519874 A CN 201310519874A CN 103556125 A CN103556125 A CN 103556125A
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Abstract
The invention relates to a coating film process for a metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film. The coating film process is characterized by comprising the following steps: performing vacuum pumping inside a reaction chamber of a coating machine; aerating ammonia gas and silicane for 15s to 20s, controlling the ammonia flow to be 6300sccm to 6400sccm and the silane flow to be 1400sccm to 1500sccm; performing first film coating; performing vacuum pumping inside the reaction chamber, aerating ammonia gas and silicane for 15s to 20s, controlling the ammonia flow to be 7100sccm to 7200sccmand and the silane flow to be 600sccm to 700sccm; performing second film coating; performing vacuum pumping inside the reaction chamber, and aerating N2 until the pressure reaches normal pressure. Proved by trial use, the coating film process combines advantages in various aspects of the silicon nitride film and reaches maximum advantage.
Description
Technical field
The present invention relates to the coating process in the manufacture of metallurgical grade monocrystaline silicon solar cell sheet, the double-deck antireflective film coating process of especially a kind of metallurgical grade monocrystaline silicon solar cell.
Background technology
The application of silicon nitride anti-reflection film on solar cell is to the utmost is extensively, mainly plays two aspects, the one, reduce reflection of light, and increase the absorption of battery to light; The 2nd, increase passivation, silicon nitride coating effects directly affects the minority carrier life time of silicon chip and the efficiency of conversion of cell piece after plated film.But the passivation effect of rete and antireflective light two characteristics are contradiction.
At present, according to domestic improved Siemens silicon chip double-layer silicon nitride is plated film, differing very little with cell piece efficiency of conversion individual layer plated film, is mainly because impurity content and the defect of improved Siemens silicon chip are considerably less.And domestic metallurgical grade monocrystaline silicon solar cell coating process major part is with PECVD equipment deposited monolayers silicon nitride anti-reflecting film, due to metallurgical grade monocrystalline silicon piece foreign matter content and defect, to compare improved Siemens monocrystalline silicon piece high, cause silicon chip film-coated rear minority carrier life time lower, so the metallurgical grade monocrystaline silicon solar cell sheet efficiency of conversion of individual layer silicon nitride anti-reflection film is lower by 0.15%～0.2% than improved Siemens.Individual layer coating process is very poor to the passivation effect of metallurgical grade monocrystalline silicon piece, and cell piece efficiency of conversion is low.Passivation and antireflective ray machine reason that metallurgical grade monocrystaline silicon solar cell manufacturer is just furtheing investigate silicon nitride anti-reflecting film solve metallurgical grade silicon single crystal plated film problem of passivation.
Summary of the invention
The object of this invention is to provide the double-deck antireflective film coating process of a kind of metallurgical grade monocrystaline silicon solar cell, can improve metallurgical grade monocrystalline silicon piece plated film passivation effect, do not affect again the characteristic of rete antireflective light.
The double-deck antireflective film coating process of monocrystaline silicon solar cell, its special feature is, comprises the steps:
(1) in coating equipment reaction cavity, vacuumize;
(2) pass into ammonia and silane, time 15s～20s, controls ammonia flow 6300sccm～6400sccm, silane flow rate 1400sccm～1500sccm, and end reaction chamber pressure value is controlled as 1500mTorr～1600mTorr;
(3) plated film for the first time, controlling the plated film time is 100s～110s, and coating temperature is 450 ℃～460 ℃, and radio frequency power is 6300W～6500W, and the pulse switch time is than being 4:40～4:45;
(4) reaction cavity vacuumizes, then passes into ammonia and silane, and the time is 15s～20s, controls ammonia flow 7100sccm～7200sccm, silane flow rate 600sccm～700sccm, and end reaction chamber pressure value is controlled as 1500mTorr～1600mTorr;
(5) plated film for the second time, controls plated film time 560s～570s, and coating temperature is 450 ℃～460 ℃, and radio frequency power is 6300W～6500W, and the pulse switch time is than being 4:40～4:45;
(6) reaction cavity is vacuumized, then pour N
2until normal pressure can complete.
In coating equipment reaction cavity, vacuumize in step (1), time 200s～250s, to force value for being no more than 30mTorr.
Reaction cavity vacuumizes 150s～200s in step (4), to force value for being no more than 30mTorr.
Step vacuumizes 150s～200s by reaction cavity in (6), to force value for being no more than 30mTorr.
Through probationary certificate, technique of the present invention combines the advantage of silicon nitride film each side, has reached advantage maximization.Beneficial effect of the present invention also comprises: Technology of the present invention makes metallurgical grade monocrystalline silicon piece good passivation effect, has improved minority carrier life time; Anti-reflective effect is good, has increased the specific absorption of light.Produce data statistics in enormous quantities and draw, double-layer silicon nitride film battery is than the efficiency of conversion mean height 0.2% of unitary film, and open circuit voltage exceeds 2mv, and short-circuit current exceeds 0.039A.The present invention has improved the efficiency of conversion of metallurgical grade monocrystaline silicon solar cell, has dwindled the gap with improved Siemens monocrystaline silicon solar cell, the market of having widened metallurgical grade monocrystalline silicon piece.
Accompanying drawing explanation
Accompanying drawing 1 is according to 21 metallurgical grade monocrystaline silicon solar cell sheets of the embodiment of the present invention 1 technical scheme and the cell piece efficiency of conversion comparison diagram of implementing according to individual layer antireflective film coating process in background technology.
Embodiment
Coating process of the present invention is divided into plated film step twice, filming parameter is for the first time: plated film time 100s～110s, and coating temperature is 450 ℃～460 ℃, radio frequency power is 6300W～6500W, ammonia and silane flow rate are than being 6400:1400, and the pulse switch time is than being 4:45; Filming parameter is for the second time: plated film time 560s～570s, and 450 ℃～460 ℃ of coating temperatures, radio frequency power is 6300W～6500W, and ammonia and silane flow rate are than being 7200:600, and the pulse switch time is than being 4:45.
Plated film for the first time in coating process of the present invention is 100s～110s in the time, adopt ammonia and silane flow rate than being 6400:1400, in temperature, it is 450 ℃～460 ℃, radio frequency power is 6300W～6500W, and pulse switch time ratio forms high refractive index (n=2.15～2.3), thickness low (d=30nm～35nm) silicon nitride film under 4:45.The object of plated film is the thinner silicon nitride film of plating one deck high refractive index for the first time, increases its passivation effect.
Plated film for the second time in coating process of the present invention is 560s～570s in the time, adopt ammonia and silane flow rate than being 7200:600,450 ℃～460 ℃ of temperature, radio frequency power is 6300W～6500W, and pulse switch time ratio forms specific refractory power (n=1.8～1.9), thickness low (d=50nm～55nm) silicon nitride film under 4:45.The object of plated film is that the slightly thick silicon nitride film of plating one deck low-refraction thickness strengthens optical match to reduce reflection of light for the second time.
Embodiment 1:
Metallurgical grade monocrystaline silicon solar cell double-layer silicon nitride anti-reflection film technique of the present invention is mainly used in tubular type PECVD coating equipment, and step is below shown in its concrete enforcement:
(1) vacuumize: in tubular type PECVD coating equipment reaction cavity, vacuumize, until force value is reduced to 30mTorr;
(2) ammonia and silane enter: time 15s, control ammonia flow 6400sccm, and silane flow rate 1400sccm, end reaction chamber pressure value reaches 1600mTorr;
(3) plated film step for the first time: plated film time 110s, coating temperature is 450 ℃, and radio frequency power is 6300W, and the pulse switch time is than being 4:45;
(4) ammonia and silane flow rate change: first the reaction cavity after plated film is for the first time vacuumized to 150s, force value is reduced to 30mTorr, then passes into ammonia and silane, time is 15s, ammonia flow is adjusted into 7200sccm, silane flow rate 600sccm, and final furnace cavity atmospheric pressure value reaches 1600mTorr;
(5) plated film step for the second time: plated film time 560s, 450 ℃ of coating temperatures, radio frequency power is 6300W, the pulse switch time is than being 4:45;
(6) vacuumize: stop, carrying out cavity and vacuumize 150s, force value is reduced to 30mTorr;
(7) pour N
2: in cavity, pour N
2until normal pressure, now double-layer silicon nitride anti-reflection film can complete.
As shown in Figure 1, for adopting 21 metallurgical grade monocrystaline silicon solar cell sheets of aforesaid method and the cell piece efficiency of conversion comparison diagram of implementing according to individual layer antireflective film coating process in background technology, according to the efficiency of conversion of cell piece shown in figure, obviously improve.
Claims (4)
1. the double-deck antireflective film coating process of metallurgical grade monocrystaline silicon solar cell, is characterized in that, comprises the steps:
(1) in coating equipment reaction cavity, vacuumize;
(2) pass into ammonia and silane, time 15s～20s, controls ammonia flow 6300sccm～6400sccm, silane flow rate 1400sccm～1500sccm, and end reaction chamber pressure value is controlled as 1500mTorr～1600mTorr;
(3) plated film for the first time, controlling the plated film time is 100s～110s, and coating temperature is 450 ℃～460 ℃, and radio frequency power is 6300W～6500W, and the pulse switch time is than being 4:40～4:45;
(4) reaction cavity vacuumizes, then passes into ammonia and silane, and the time is 15s～20s, controls ammonia flow 7100sccm～7200sccm, silane flow rate 600sccm～700sccm, and end reaction chamber pressure value is controlled as 1500mTorr～1600mTorr;
(5) plated film for the second time, controls plated film time 560s～570s, and coating temperature is 450 ℃～460 ℃, and radio frequency power is 6300W～6500W, and the pulse switch time is than being 4:40～4:45;
(6) reaction cavity is vacuumized, then pour N
2until normal pressure can complete.
2. the double-deck antireflective film coating process of a kind of metallurgical grade monocrystaline silicon solar cell as claimed in claim 1, is characterized in that: in step (1), in coating equipment reaction cavity, vacuumize, time 200s～250s, to force value for being no more than 30mTorr.
3. the double-deck antireflective film coating process of a kind of metallurgical grade monocrystaline silicon solar cell as claimed in claim 1, is characterized in that: in step (4), reaction cavity vacuumizes 150s～200s, to force value for being no more than 30mTorr.
4. the double-deck antireflective film coating process of a kind of metallurgical grade monocrystaline silicon solar cell as claimed in claim 1, is characterized in that: step vacuumizes 150s～200s by reaction cavity in (6), to force value for being no more than 30mTorr.
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Cited By (4)
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| CN106299025A (en) * | 2016-08-29 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of technique of tubular type PECVD deposited silicon nitride |
| CN110600556A (en) * | 2019-09-11 | 2019-12-20 | 浙江德西瑞新能源科技股份有限公司 | Capacity-expanding film coating process for polycrystalline solar cell antireflection film |
| CN112760614A (en) * | 2020-12-09 | 2021-05-07 | 晋能清洁能源科技股份公司 | Method for optimizing uniformity of polycrystalline PECVD (plasma enhanced chemical vapor deposition) coating |
| CN113283053A (en) * | 2021-04-17 | 2021-08-20 | 山西潞安太阳能科技有限责任公司 | Method for establishing pecvd coating process parameters of crystalline silicon battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106299025A (en) * | 2016-08-29 | 2017-01-04 | 奥特斯维能源（太仓）有限公司 | A kind of technique of tubular type PECVD deposited silicon nitride |
| CN110600556A (en) * | 2019-09-11 | 2019-12-20 | 浙江德西瑞新能源科技股份有限公司 | Capacity-expanding film coating process for polycrystalline solar cell antireflection film |
| CN110600556B (en) * | 2019-09-11 | 2020-12-15 | 浙江德西瑞新能源科技有限公司 | Capacity-expanding film coating process for polycrystalline solar cell antireflection film |
| CN112760614A (en) * | 2020-12-09 | 2021-05-07 | 晋能清洁能源科技股份公司 | Method for optimizing uniformity of polycrystalline PECVD (plasma enhanced chemical vapor deposition) coating |
| CN112760614B (en) * | 2020-12-09 | 2023-02-28 | 晋能清洁能源科技股份公司 | Method for optimizing uniformity of polycrystalline PECVD (plasma enhanced chemical vapor deposition) coating |
| CN113283053A (en) * | 2021-04-17 | 2021-08-20 | 山西潞安太阳能科技有限责任公司 | Method for establishing pecvd coating process parameters of crystalline silicon battery |
| CN113283053B (en) * | 2021-04-17 | 2022-09-30 | 山西潞安太阳能科技有限责任公司 | Method for establishing pecvd coating process parameters of crystalline silicon battery |
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