CN110600556B - Capacity-expanding film coating process for polycrystalline solar cell antireflection film - Google Patents
Capacity-expanding film coating process for polycrystalline solar cell antireflection film Download PDFInfo
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- CN110600556B CN110600556B CN201910858991.XA CN201910858991A CN110600556B CN 110600556 B CN110600556 B CN 110600556B CN 201910858991 A CN201910858991 A CN 201910858991A CN 110600556 B CN110600556 B CN 110600556B
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- 239000007888 film coating Substances 0.000 title claims abstract description 27
- 238000009501 film coating Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims description 13
- 230000008569 process Effects 0.000 title claims description 13
- 238000000576 coating method Methods 0.000 claims abstract description 50
- 239000011248 coating agent Substances 0.000 claims abstract description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 13
- 239000010439 graphite Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 238000010926 purge Methods 0.000 claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 12
- FANANXQSVYPRCQ-UHFFFAOYSA-N azane;silicon Chemical compound N.[Si] FANANXQSVYPRCQ-UHFFFAOYSA-N 0.000 claims description 9
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 238000010248 power generation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a capacity expansion coating process of an antireflection film of a polycrystalline solar cell, and belongs to the technical field of cell processing. The technical problems that the existing battery piece is slow in processing efficiency, large in color difference and the like are solved. A capacity expansion coating process of an antireflection film of a polycrystalline solar cell is characterized by comprising the following steps: s1, filling N into the film coating chamber2Purging, namely placing the battery piece into a graphite boat after texturing and heating the battery piece in a coating chamber; s2, evacuating the film coating chamber and forming a vacuum state; s3, introducing NH into the film coating chamber3、SiH4Starting a radio frequency transmitter with the power of 11250w to form a first layer of film on the surface of the battery piece; s4, turning off the radio frequency emitter and continuously introducing NH3、SiH4Increasing the pressure in the film coating chamber to 1600Pa, so that a second film is formed on the surface of the first film of the battery piece; s5, evacuating; and S6, taking out the boat. The invention has the advantages of high processing efficiency and small color difference.
Description
Technical Field
The invention belongs to the technical field of battery piece processing, and particularly relates to a capacity-expanding coating process of an antireflection film of a polycrystalline solar battery.
Background
The cost of photovoltaic power generation is too high, so that the photovoltaic power generation still cannot replace traditional energy, and the key that the photovoltaic industry can gradually replace the traditional energy is to reduce the cost and improve the conversion efficiency of the solar cell. At present, photovoltaic power generation products in the market mainly use polycrystalline solar cell modules, and the key for reducing the cost of the polycrystalline solar cells and improving the conversion efficiency of the polycrystalline cells is cost reduction.
The polycrystalline silicon is subjected to texturing by adopting a hydrofluoric acid and nitric acid system to prepare a micron-sized worm-shaped structure, and the surface reflectivity of the textured polycrystalline silicon wafer is controlled to be about 22-24%.
However, with photovoltaic power generation, the production and processing of the battery pieces are difficult to break through the limitation, in the traditional battery piece coating process, 240 pieces per boat are fewer in the total coating processing quantity in one day, the requirement of yield cannot be met, in the traditional coating process, the color of the battery pieces is easy to generate color difference, and the rejection rate is high.
Disclosure of Invention
The invention aims to solve the problems in the prior art, provides a capacity expansion coating process of a polycrystalline solar cell antireflection film, and solves the problems of low processing efficiency and large chromatic aberration.
The purpose of the invention can be realized by the following technical scheme:
a capacity expansion coating process of an antireflection film of a polycrystalline solar cell is characterized by comprising the following steps:
s1, heating five temperature zones of the film coating chamber, and then filling N into the film coating chamber2Purging, namely placing the battery piece into a graphite boat after texturing, placing the graphite boat into a coating chamber, and heating the battery piece for 60 s;
s2, keeping the coating chamber at normal pressure, adjusting the temperature back to the temperature required by the process, continuously heating for 500S, keeping the temperature of the five temperature zones, and then evacuating the coating chamber to form a vacuum state;
s3, introducing NH into the film coating chamber3，NH3The flow is 7000sccm, the pressure in the coating chamber is increased after 300s, the pressure of the coating chamber is increased to 310Pa and is kept for 10s, and then NH is introduced into the coating chamber simultaneously3、SiH4Introducing SiH4The flow rate is 1600sccm, NH is introduced3Flow 7000sccm in NH3、SiH4Starting the radio frequency transmitter after 20s is introduced, wherein the power is 11250w, and at the moment, the pressure in the film coating chamber is 1600Pa, so that a first film is formed on the surface of the battery piece;
s4, turning off the radio frequency emitter and continuously introducing NH3、SiH4Introduction of NH3The flow rate is 8500sccm, SiH is introduced4The flow rate is 800sccm, the preparation for stabilizing the second layer film is carried out, the duration is 640s, the pressure in the film coating chamber is increased to 1600Pa, wherein NH is introduced3、SiH4After 10s, the RF transmitter is started at 13250w to make the first layer of the cell sheetForming a second layer film on the surface of the film;
s5, evacuating and filling N into the film coating chamber2Purging;
and S6, taking out the boat.
The ratio of silicon ammonia is the ratio of silane and ammonia.
In the capacity-expanding coating process of the polycrystalline solar cell antireflection film, the temperature of the five temperature zones is 575 ℃, 550 ℃, 565 ℃, 570 ℃ and 510 ℃ in sequence along the preset direction.
575 ℃ is the inlet temperature of the coating chamber. The temperature required by the process is 575 ℃, 550 ℃, 565 ℃, 570 ℃ and 510 ℃.
In the capacity expansion coating process of the polycrystalline solar cell antireflection film, the number of the graphite boat pages is 27, and the distance between adjacent boat pages is 1.7 cm.
In the expansion coating process of the polycrystalline solar cell antireflection film, the thickness of the first layer is 30 micrometers, and the thickness of the second layer is 50 micrometers.
In the expansion coating process of the polycrystalline solar cell antireflection film, the first film and the second film are both silicon nitride films.
In the expansion coating process of the polycrystalline solar cell antireflection film, N is filled into the coating cavity when the coating cavity is pressurized2And (4) pressurizing.
In the expansion coating process of the polycrystalline solar cell antireflection film, when the first layer of film is coated, the ratio of ammonia to silicon in the coating cavity is 4.375: 1.
in the expansion coating process of the polycrystalline solar cell antireflection film, when the second film is coated, the proportion of ammonia silicon in the coating cavity is 10.625: 1.
in the dilatation coating process of the polycrystalline solar cell antireflection film, the ratio of the total amount of the silicon ammonia when the first layer of film is coated to the total amount of the silicon ammonia when the second layer of film is coated is 1: 2.248. the above is a volume ratio under a standard air pressure.
Compared with the prior art, the invention has the following advantages:
1. expand from conventional 240pcs of a boat and produce to a boat 460pcs, the length of extension graphite boat changes original 6 check boat pages into 8 check boat pages, changes the length of electrode bar into short further, makes the graphite boat can put in the central position of coating film cavity as far as possible, makes things convenient for better control temperature to adjust every warm area according to actual conditions, in order to adapt to the demand of big boat.
2. Changing the gas atmosphere during film coating, improving the radio frequency power, shortening the process time and achieving the purpose of increasing the yield.
3. Through temperature and gas atmosphere adjustment, the problem of color difference of the surface of the battery piece is reduced, and the rejection rate is reduced.
Drawings
FIG. 1 is a flow chart of the present invention.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
As shown in fig. 1, a process for expanding and coating an antireflection film of a polycrystalline solar cell includes the following steps:
s1, heating five temperature zones of the film coating chamber, and then filling N into the film coating chamber2Purging, namely placing the battery piece into a graphite boat after texturing, placing the graphite boat into a coating chamber, and heating the battery piece for 60 s;
s2, keeping the coating chamber at normal pressure, adjusting the temperature back to the temperature required by the process, continuously heating for 500S, keeping the temperature of the five temperature zones, and then evacuating the coating chamber to form a vacuum state;
s3, introducing NH into the film coating chamber3，NH3The flow is 7000sccm, the pressure in the coating chamber is increased after 300s, the pressure of the coating chamber is increased to 310Pa and is kept for 10s, and then NH is introduced into the coating chamber simultaneously3、SiH4Introducing SiH4The flow rate is 1600sccm, NH is introduced3Flow 7000sccm in NH3、SiH4Starting the radio frequency transmitter after 20s is introduced, wherein the power is 11250w, and at the moment, the pressure in the film coating chamber is 1600Pa, so that a first film is formed on the surface of the battery piece;
s4, turning off the radio frequency emitter and continuously introducing NH3、SiH4Introduction of NH3The flow rate is 8500sccm, SiH is introduced4The flow rate is 800sccm, the preparation for stabilizing the second layer film is carried out, the duration is 640s, the pressure in the film coating chamber is increased to 1600Pa, wherein NH is introduced3、SiH4After 10s, starting the radio frequency transmitter with power of 13250w to form a second film on the surface of the first film of the battery piece;
s5, evacuating and filling N into the film coating chamber2Purging;
and S6, taking out the boat.
The ratio of silicon ammonia is the ratio of silane and ammonia.
Specifically, the temperature of the five temperature zones is 575 ℃, 550 ℃, 565 ℃, 570 ℃ and 510 ℃ along the preset direction in sequence.
575 ℃ is the inlet temperature of the coating chamber. The temperature required by the process is 575 ℃, 550 ℃, 565 ℃, 570 ℃ and 510 ℃.
Specifically, the number of the graphite boat pages is 27, and the distance between adjacent boat pages is 1.7 cm.
Specifically, the first layer was 30 μm thick and the second layer was 50 μm thick.
Specifically, the first film and the second film are both silicon nitride films.
Specifically, when the film coating chamber is pressurized, N is filled into the film coating chamber2And (4) pressurizing.
Specifically, when the first layer of film is plated, the ratio of ammonia to silicon in the plating chamber is 4.375: 1.
specifically, when the second layer of film is plated, the ratio of ammonia to silicon in the plating chamber is 10.625: 1.
specifically, the ratio of the total amount of the silicon ammonia when the first layer of film is plated to the total amount of the silicon ammonia when the second layer of film is plated is 1: 2.248.
the above components are all standard components or components known to those skilled in the art, and the structure and principle thereof can be known to those skilled in the art through technical manuals or through routine experiments.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (9)
1. A capacity expansion coating process of an antireflection film of a polycrystalline solar cell is characterized by comprising the following steps:
s1, heating five temperature zones of the film coating chamber, and then filling N into the film coating chamber2Purging, namely, putting a graphite boat after texturing the battery piece, placing the graphite boat in a coating chamber for heating, and heating the battery piece for 60s, wherein the number of the graphite boat pages is 27, the graphite boat is 8, and a 460pcs polycrystalline silicon wafer boat is arranged;
s2, keeping the coating chamber at normal pressure, adjusting the temperature back to the temperature required by the process, continuously heating for 500S, keeping the temperature of the five temperature zones, and then evacuating the coating chamber to form a vacuum state;
s3, introducing NH into the film coating chamber3，NH3The flow is 7000sccm, the pressure in the coating chamber is increased after 300s, the pressure of the coating chamber is increased to 310Pa and is kept for 10s, and then NH is introduced into the coating chamber simultaneously3、SiH4Introducing SiH4The flow rate is 1600sccm, NH is introduced3Flow 7000sccm in NH3、SiH4Starting the radio frequency transmitter after 20s is introduced, wherein the power is 11250w, and at the moment, the pressure in the film coating chamber is 1600Pa, so that a first film is formed on the surface of the battery piece;
s4, turning off the radio frequency emitter and continuously introducing NH3、SiH4Introduction of NH3The flow rate is 8500sccm, SiH is introduced4The flow rate is 800sccm, the preparation for stabilizing the second layer film is carried out, the duration is 640s, the pressure in the film coating chamber is increased to 1600Pa, wherein NH is introduced3、SiH4 After 10s, starting the radio frequency transmitter with power of 13250w to form a second film on the surface of the first film of the battery piece;
s5, evacuating and filling N into the film coating chamber2Purging;
and S6, taking out the boat.
2. The expansion coating process of the polycrystalline solar cell antireflection film according to claim 1, wherein the five temperature zones are 575 ℃, 550 ℃, 565 ℃, 570 ℃ and 510 ℃ in sequence along a preset direction.
3. The process of claim 1, wherein the distance between adjacent boat pages is 1.7 cm.
4. The expansion plating process of the polycrystalline solar cell antireflection film according to claim 1, wherein the thickness of the first layer is 30 μm, and the thickness of the second layer is 50 μm.
5. The expansion plating process of the polycrystalline solar cell antireflection film according to claim 1, wherein the first film and the second film are both silicon nitride films.
6. The process of claim 1, wherein N is charged into the chamber while pressurizing the chamber2And (4) pressurizing.
7. The expansion coating process of the polycrystalline solar cell antireflection film according to claim 1, wherein when the first film is coated, the ratio of ammonia to silicon in the coating chamber is 4.375: 1.
8. the expansion coating process of the polycrystalline solar cell antireflection film according to claim 1, wherein when the second film is coated, the ratio of ammonia to silicon in the coating chamber is 10.625: 1.
9. the dilatation coating process of the polycrystalline solar cell antireflection film according to claim 1, wherein the ratio of the total amount of the silicon ammonia when the first film is plated to the total amount of the silicon ammonia when the second film is plated is 1: 2.248.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103556125A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film |
| CN103606599A (en) * | 2013-11-30 | 2014-02-26 | 浙江光隆能源科技股份有限公司 | Method for manufacturing high-refractive-index silicon nitride antireflection film |
| CN106449782A (en) * | 2016-11-03 | 2017-02-22 | 国家电投集团西安太阳能电力有限公司 | Silicon nitride anti-reflection film structure for crystal silicon solar cell and preparation method thereof |
| CN107316918A (en) * | 2017-06-23 | 2017-11-03 | 浙江光隆能源科技股份有限公司 | Suitable for the coating process of three layers of antireflective coating of polycrystalline solar cell |
| CN108588676A (en) * | 2018-04-26 | 2018-09-28 | 维科诚（苏州）光伏科技有限公司 | A kind of solar battery antireflective film and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050189015A1 (en) * | 2003-10-30 | 2005-09-01 | Ajeet Rohatgi | Silicon solar cells and methods of fabrication |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103556125A (en) * | 2013-10-29 | 2014-02-05 | 宁夏银星能源股份有限公司 | Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film |
| CN103606599A (en) * | 2013-11-30 | 2014-02-26 | 浙江光隆能源科技股份有限公司 | Method for manufacturing high-refractive-index silicon nitride antireflection film |
| CN106449782A (en) * | 2016-11-03 | 2017-02-22 | 国家电投集团西安太阳能电力有限公司 | Silicon nitride anti-reflection film structure for crystal silicon solar cell and preparation method thereof |
| CN107316918A (en) * | 2017-06-23 | 2017-11-03 | 浙江光隆能源科技股份有限公司 | Suitable for the coating process of three layers of antireflective coating of polycrystalline solar cell |
| CN108588676A (en) * | 2018-04-26 | 2018-09-28 | 维科诚（苏州）光伏科技有限公司 | A kind of solar battery antireflective film and preparation method thereof |
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