CN109830570A - A kind of passivation film and preparation method thereof - Google Patents
A kind of passivation film and preparation method thereof Download PDFInfo
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- CN109830570A CN109830570A CN201910135142.1A CN201910135142A CN109830570A CN 109830570 A CN109830570 A CN 109830570A CN 201910135142 A CN201910135142 A CN 201910135142A CN 109830570 A CN109830570 A CN 109830570A
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Abstract
The invention discloses a kind of passivation films and preparation method thereof, include: step 1, on a silicon substrate by the volume ratio of ammonia and silane be 4800: 1200 carry out plated films, prepare the first layer film；Step 2 presses the volume ratio of ammonia and silane on the first layer film as 5400: 900 progress plated films, prepares the second layer film；Step 3 presses the volume ratio of ammonia and silane on the second layer film as 5600: 560 progress plated films, prepares third layer film 2；Step 4 presses the volume ratio of ammonia and silane on third layer film as 6300: 550 progress plated films, prepares four-level membrane.First layer second layer third layer is high refractive index film, and the 4th layer is low refractive index film.Passivation film provided by the invention and preparation method thereof can make one layer of composite membrane in silicon substrate, further increase the passivation effect of hydrogen, to achieve the purpose that improve minority carrier life time and short circuit current improves efficiency to be finally reached.
Description
Technical field
The film and preparation method thereof that the present invention relates to a kind of for solar photovoltaic technology, and in particular, to one
Kind passivation film and preparation method thereof.
Background technique
Silicon nitride film preparation plays the reflection for reducing silicon chip surface in manufacture of solar cells, and then increases the suction of light
The effect of receipts is one of important step of crystal silicon solar energy battery.Its key is that the film not only reduces silicon face reflection,
It is also passivated a large amount of impurity and defect in silicon materials, and is valence band or conduction band to improve in silicon wafer by changing energy band in forbidden band
Carrier mobility extends the purpose that minority carrier life time improves incident photon-to-electron conversion efficiency.Therefore how preferably to enhance antireflective coating
Passivation effect has great significance for the promotion of cell piece efficiency.Usual PECVD (Plasma Enhanced
Chemical Vapor Deposition, the vapour deposition process of plasma enhanced chemical) passivation effect it is unsatisfactory, because
How this further increases the passivation effect of hydrogen, is improved efficiency with reaching raising minority carrier life time and short circuit current to be finally reached
Purpose be just particularly important.
Summary of the invention
The object of the present invention is to provide a kind of passivation film and its preparation processes, solve existing issue, can effectively improve
Passivation effect.
In order to achieve the above object, the present invention provides a kind of preparation methods of passivation film, wherein the method packet
Contain: step 1, on a silicon substrate with ammonia and silane plated film prepares the first layer film；Step 2, on the first layer film with ammonia
With silane plated film, the second layer film is prepared；Step 3, on the second layer film with ammonia and silane plated film, it is thin to prepare third layer
Film；Step 4, on third layer film with ammonia and silane plated film, prepare four-level membrane.Other operations of coating process with
PECVD (Plasma Enhanced Chemical Vapor Deposition, the vapor deposition of plasma enhanced chemical
Method) it is identical.
The preparation method of above-mentioned passivation film, wherein in the step 1, on a silicon substrate by ammonia and silane
Volume ratio is 4800: 1200 progress plated films, and plated film time is 35~45 seconds, prepares the first layer film；First layer film,
With a thickness of 4~8nm, refractive index is 2.25~2.30.
The preparation method of above-mentioned passivation film, wherein first layer film, plated film time are 40 seconds, with a thickness of
6nm, refractive index are 2.26~2.28.
The preparation method of above-mentioned passivation film, wherein in the step 2, ammonia and silicon are pressed on the first layer film
The volume ratio of alkane is 5400: 900 progress plated films, and plated film time is 75~85 seconds, prepares the second layer film；The second layer is thin
Film, with a thickness of 14~18nm, refractive index is 2.13~2.16.
The preparation method of above-mentioned passivation film, wherein second layer film, plated film time are 80 seconds, with a thickness of
15nm, refractive index 2.15.
The preparation method of above-mentioned passivation film, wherein in the step 3, ammonia and silicon are pressed on the second layer film
The volume ratio of alkane is 5600: 560 progress plated films, and plated film time is 175~185 seconds, prepares third layer film；The third layer
Film, with a thickness of 28~32nm, refractive index is 2.08~2.12.
The preparation method of above-mentioned passivation film, wherein the third layer film, plated film time are 180 seconds, with a thickness of
30nm, refractive index 2.10.
The preparation method of above-mentioned passivation film, wherein in the step 4, ammonia and silicon are pressed on third layer film
The volume ratio of alkane is 6300: 550 progress plated films, and plated film time is 205~215 seconds, prepares four-level membrane；Described the 4th layer
Film, with a thickness of 28~32nm, refractive index is 2.01~2.04.
The preparation method of above-mentioned passivation film, wherein the four-level membrane, plated film time are 210 seconds, with a thickness of
30nm, refractive index 2.03.
The present invention also provides the passivation films of above-mentioned method preparation.
Passivation film provided by the invention and preparation method thereof has the advantage that
In the passivation film that the present invention makes, first layer second layer third layer is high refractive index film, and the 4th layer is low folding
Penetrate rate film.The present invention makes compound passivation film using high low-refraction, can be improved the passivation effect of hydrogen, and then improve
Minority carrier life time and short circuit current are finally reached the purpose for improving cell piece transfer efficiency.
Specific embodiment
A specific embodiment of the invention is further described below.
The preparation method of passivation film provided by the invention includes: step 1, on a silicon substrate with ammonia and silane plated film,
Prepare the first layer film；Step 2, on the first layer film with ammonia and silane plated film, prepare the second layer film；Step 3,
With ammonia and silane plated film on two-layer film, third layer film is prepared；Step 4 is plated on third layer film with ammonia and silane
Film prepares four-level membrane.Other operations of coating process and PECVD (Plasma Enhanced Chemical Vapor
Deposition, the vapour deposition process of plasma enhanced chemical) it is identical.
It is on a silicon substrate 4800: 1200 progress plated films by the volume ratio of ammonia and silane, plated film time is in step 1
35~45 seconds, prepare the first layer film；First layer film thickness is 4~8nm, and refractive index is 2.25~2.30.
Preferably, the first layer coating thin film time is 40 seconds, and with a thickness of 6nm, refractive index is 2.26~2.28.
In step 2, plated films, plated film time are carried out for 5400: 900 by the volume ratio of ammonia and silane on the first layer film
It is 75~85 seconds, prepares the second layer film；Second layer film thickness is 14~18nm, and refractive index is 2.13~2.16.
Preferably, the second layer coating thin film time is 80 seconds, with a thickness of 15nm, refractive index 2.15.
In step 3, plated films, plated film time are carried out for 5600: 560 by the volume ratio of ammonia and silane on the second layer film
It is 175~185 seconds, prepares third layer film；Third layer film thickness is 28~32nm, and refractive index is 2.08~2.12.
Preferably, the third layer coating thin film time is 180 seconds, with a thickness of 30nm, refractive index 2.10.
In step 4, plated films, plated film time are carried out for 6300: 550 by the volume ratio of ammonia and silane on third layer film
It is 205~215 seconds, prepares four-level membrane；For four-level membrane with a thickness of 28~32nm, refractive index is 2.01~2.04.
Preferably, four-level membrane plated film time is 210 seconds, with a thickness of 30nm, refractive index 2.03.
The present invention also provides the passivation films of this method preparation.
Passivation film provided by the invention and preparation method thereof is further described below with reference to embodiment.
Embodiment 1
A kind of preparation method of passivation film includes:
Step 1, on a silicon substrate with ammonia and silane plated film, prepare the first layer film；
Preferably, plated films, plated film time 40 are carried out for 4800: 1200 by the volume ratio of ammonia and silane on a silicon substrate
Second, prepare the first layer film；First layer film thickness is 6nm, refractive index 2.27.
Step 2, on the first layer film with ammonia and silane plated film, prepare the second layer film；
It preferably, is 5400: 900 progress plated films, plated film time by the volume ratio of ammonia and silane on the first layer film
It is 80 seconds, prepares the second layer film；Second layer film thickness is 15nm, refractive index 2.15.
Step 3, on the second layer film with ammonia and silane plated film, prepare third layer film；
It preferably, is 5600: 560 progress plated films, plated film time by the volume ratio of ammonia and silane on the second layer film
It is 180 seconds, prepares third layer film；Third layer film thickness is 30nm, refractive index 2.10.
Step 4, on third layer film with ammonia and silane plated film, prepare four-level membrane.
It preferably, is 6300: 550 progress plated films, plated film time by the volume ratio of ammonia and silane on third layer film
It is 210 seconds, prepares four-level membrane；Four-level membrane is with a thickness of 30nm, refractive index 2.03.
The present embodiment additionally provides the passivation film of this method preparation.
Embodiment 2
A kind of preparation method of passivation film includes:
Step 1, on a silicon substrate with ammonia and silane plated film, prepare the first layer film；
Preferably, plated films, plated film time 40 are carried out for 4800: 1200 by the volume ratio of ammonia and silane on a silicon substrate
Second, prepare the first layer film；First layer film thickness is 4nm, refractive index 2.25.
Step 2, on the first layer film with ammonia and silane plated film, prepare the second layer film；
It preferably, is 5400: 900 progress plated films, plated film time by the volume ratio of ammonia and silane on the first layer film
It is 75 seconds, prepares the second layer film；Second layer film thickness is 14nm, refractive index 2.13.
Step 3, on the second layer film with ammonia and silane plated film, prepare third layer film；
It preferably, is 5600: 560 progress plated films, plated film time by the volume ratio of ammonia and silane on the second layer film
It is 175 seconds, prepares third layer film；Third layer film thickness is 28nm, refractive index 2.08.
Step 4, on third layer film with ammonia and silane plated film, prepare four-level membrane.
It preferably, is 6300: 550 progress plated films, plated film time by the volume ratio of ammonia and silane on third layer film
It is 205 seconds, prepares four-level membrane；Four-level membrane is with a thickness of 28, refractive index 2.01.
The present embodiment additionally provides the passivation film of this method preparation.
Embodiment 3
A kind of preparation method of passivation film includes:
Step 1, on a silicon substrate with ammonia and silane plated film, prepare the first layer film；
Preferably, plated films, plated film time 40 are carried out for 4800: 1200 by the volume ratio of ammonia and silane on a silicon substrate
Second, prepare the first layer film；First layer film thickness is 8nm, refractive index 2.30.
Step 2, on the first layer film with ammonia and silane plated film, prepare the second layer film；
It preferably, is 5400: 900 progress plated films, plated film time by the volume ratio of ammonia and silane on the first layer film
It is 85 seconds, prepares the second layer film；Second layer film thickness is 18nm, refractive index 2.16.
Step 3, on the second layer film with ammonia and silane plated film, prepare third layer film；
It preferably, is 5600: 560 progress plated films, plated film time by the volume ratio of ammonia and silane on the second layer film
It is 185 seconds, prepares third layer film；Third layer film thickness is 32nm, refractive index 2.12.
Step 4, on third layer film with ammonia and silane plated film, prepare four-level membrane.
It preferably, is 6300: 550 progress plated films, plated film time by the volume ratio of ammonia and silane on third layer film
It is 215 seconds, prepares four-level membrane；Four-level membrane is with a thickness of 32nm, refractive index 2.04.
The present embodiment additionally provides the passivation film of this method preparation.
Passivation film provided by the invention and preparation method thereof, in the passivation film of production, first layer second layer third layer
For high refractive index film, the 4th layer is low refractive index film.By making one layer of composite membrane in silicon substrate, further increase
The passivation effect of hydrogen is improved efficiency with achieving the purpose that improve minority carrier life time and short circuit current to be finally reached.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of preparation method of passivation film, which is characterized in that the method includes:
Step 1, on a silicon substrate with ammonia and silane plated film, prepare the first layer film；
Step 2, on the first layer film with ammonia and silane plated film, prepare the second layer film；
Step 3, on the second layer film with ammonia and silane plated film, prepare third layer film；
Step 4, on third layer film with ammonia and silane plated film, prepare four-level membrane.
2. the preparation method of passivation film as described in claim 1, which is characterized in that in the step 1, on a silicon substrate
It is 4800: 1200 progress plated films by the volume ratio of ammonia and silane, plated film time is 35~45 seconds, prepares the first layer film；Institute
The first layer film stated, with a thickness of 4~8nm, refractive index is 2.25~2.30.
3. the preparation method of passivation film as claimed in claim 2, which is characterized in that first layer film, when plated film
Between be 40 seconds, with a thickness of 6nm, refractive index is 2.26~2.28.
4. the preparation method of passivation film as described in claim 1, which is characterized in that thin in first layer in the step 2
Plated films are carried out for 5400: 900 by the volume ratio of ammonia and silane on film, plated film time is 75~85 seconds, prepares the second layer film；
Second layer film, with a thickness of 14~18nm, refractive index is 2.13~2.16.
5. the preparation method of passivation film as claimed in claim 4, which is characterized in that second layer film, when plated film
Between be 80 seconds, with a thickness of 15nm, refractive index 2.15.
6. the preparation method of passivation film as described in claim 1, which is characterized in that thin in the second layer in the step 3
Plated films are carried out for 5600: 560 by the volume ratio of ammonia and silane on film, plated film time is 175~185 seconds, and preparation third layer is thin
Film；The third layer film, with a thickness of 28~32nm, refractive index is 2.08~2.12.
7. the preparation method of passivation film as claimed in claim 6, which is characterized in that the third layer film, when plated film
Between be 180 seconds, with a thickness of 30nm, refractive index 2.10.
8. the preparation method of passivation film as described in claim 1, which is characterized in that thin in third layer in the step 4
Plated films are carried out for 6300: 550 by the volume ratio of ammonia and silane on film, plated film time is 205~215 seconds, is prepared the 4th layer thin
Film；The four-level membrane, with a thickness of 28~32nm, refractive index is 2.01~2.04.
9. the preparation method of passivation film as claimed in claim 8, which is characterized in that the four-level membrane, when plated film
Between be 210 seconds, with a thickness of 30nm, refractive index 2.03.
10. a kind of passivation film of the method preparation as described in any one of claim 1~9.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339872A (en) * | 2011-09-28 | 2012-02-01 | 湖南红太阳新能源科技有限公司 | Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film |
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| CN107190247A (en) * | 2017-06-20 | 2017-09-22 | 山西潞安太阳能科技有限责任公司 | A kind of preparation method of solar cell PECVD multilayer passivated reflection reducing membranes |
| CN108110066A (en) * | 2018-02-05 | 2018-06-01 | 通威太阳能（安徽）有限公司 | A kind of front film layer structure and preparation method for promoting PERC battery conversion efficiencies |
| CN108365023A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | Coating process for the black silicon face passivation of polycrystalline |
| CN109037360A (en) * | 2018-08-09 | 2018-12-18 | 润峰电力有限公司 | A kind of solar cell inactivating antireflective film and its coating process |
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
-
2019
- 2019-02-22 CN CN201910135142.1A patent/CN109830570A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339872A (en) * | 2011-09-28 | 2012-02-01 | 湖南红太阳新能源科技有限公司 | Multilayer silicon nitride antireflection film of crystalline silicon solar cell and preparation method of multilayer silicon nitride antireflection film |
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| CN107190247A (en) * | 2017-06-20 | 2017-09-22 | 山西潞安太阳能科技有限责任公司 | A kind of preparation method of solar cell PECVD multilayer passivated reflection reducing membranes |
| CN108365023A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | Coating process for the black silicon face passivation of polycrystalline |
| CN108110066A (en) * | 2018-02-05 | 2018-06-01 | 通威太阳能（安徽）有限公司 | A kind of front film layer structure and preparation method for promoting PERC battery conversion efficiencies |
| CN109037360A (en) * | 2018-08-09 | 2018-12-18 | 润峰电力有限公司 | A kind of solar cell inactivating antireflective film and its coating process |
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
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Application publication date: 20190531 |