CN103137714A - Solar cell three-layer composition passivation reduction layer and preparing method thereof - Google Patents
Solar cell three-layer composition passivation reduction layer and preparing method thereof Download PDFInfo
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- CN103137714A CN103137714A CN2011103922394A CN201110392239A CN103137714A CN 103137714 A CN103137714 A CN 103137714A CN 2011103922394 A CN2011103922394 A CN 2011103922394A CN 201110392239 A CN201110392239 A CN 201110392239A CN 103137714 A CN103137714 A CN 103137714A
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Abstract
The invention relates to solar cell three-layer composition passivation reduction layer. The solar cell three-layer composition passivation reduction layer is characterized in that three-layer composition passivation reduction layer is prepared on a base of a silicon solar cell by utilizing of an atom layer sediment method, and the structure of the three-layer composition passivation reduction layer includes from bottom to top a titanium dioxide (TiO2) layer, a titanium dioxide/silicon dioxide (TiO2/SiO2) layer and a silicon dioxide (SiO2) layer from the base. The invention further relates to a preparation method of the solar cell three-layer composition passivation reduction layer. The solar cell three-layer composition passivation reduction layer can simultaneously play a role of reduction and passivation, on one hand can reduce reflectivity of the surface of a solar cell, on the other hand, can reduce carrier recombination, improves cell performance, and simultaneously can further improve reduction and passivation effect through introducing of a transitional layer.
Description
Invention field
The present invention relates to technical field of semiconductors, specifically relate to three layers of passivated reflection reducing layer of a kind of silicon solar cell and preparation method thereof.
Background technology
At present, the photovoltaic industry development is like a raging fire, and make high efficiency, silicon solar cell is the main study hotspot in photovoltaic industry field cheaply.The compound loss that causes photo-generated carrier of minority carrier in silicon solar cell, thus the significantly reduction of battery efficiency caused, thereby low charge carrier surface recombination is to reach one of high efficiency prerequisite.Compound for reducing surperficial charge carrier, surface passivating treatment all is absolutely necessary.Passivation is preferably carried out on surface to silicon solar cell, can remove dangling bonds and reduce surface state, and this is a kind of important method that reduces surface recombination.Simultaneously, antireflective film also has very important effect for the efficient that promotes solar cell, because it has determined directly how many sunlights solar cell can absorb.Surface passivated membrane of traditional silicon solar cell and preparation method thereof includes traditional thermal oxidation method (CTO), rapid thermal oxidation method (RTO) preparation SiO
2Passivating film, plasma enhanced chemical vapor deposition (PECVD) SiNx and SiO
2The stacking passivating film of/SiNx etc.Simultaneously, the passivating film of said method preparation is because refractive index between glass and silicon chip, therefore also has certain anti-reflection effect.For example SiNx namely is commonly used for antireflective film.But generally, the film of individual layer is difficult to the anti-reflection effect that reaches desirable, therefore can adopt the antireflective film of the even more multi-layered number of bilayer of gradually changed refractive index.
Summary of the invention
For reaching the dual purpose of passivation and anti-reflection, the invention provides a kind of three layers of reduced passivation resisting film that utilize the preparation of ald (ALD) method, can carry out effective passivation to silicon face on the one hand, has simultaneously good anti-reflection performance, can effectively improve the photoelectric conversion efficiency of solar cell, and the preparation method is simple, controlled.
A kind of three layers of reduced passivation resisting film that utilize the preparation of ALD method that the present invention proposes specifically refer to utilize ALD to prepare TiO
2Then layer utilizes ALD to prepare TiO
2/ SiO
2Composite bed, recycling ALD prepares SiO
2Composite bed.
The ALD method that the present invention utilizes, monatomic deposition step is resolved in the CVD thin film deposition of routine, the film growth of ALD forms by the mode that one deck connects one deck, thereby all has obvious advantage at aspects such as the uniformity of film, THICKNESS CONTROL, compactness, the film preparation temperature is also relatively low, less on the minority carrier life time impact, energy consumption is lower; Therefore the advantage such as possess simultaneously preparation technology's good reproducibility, can accurately adulterate is very suitable for the Design ﹠ preparation of plural layers.In addition, because film has good compactness, so passivation effect is very obvious.
According to above-mentioned design, the present invention adopts following technical scheme:
Three layers of composite passivated reflection reducing layer of a kind of solar cell, it is characterized in that, prepare a kind of three layers of composite passivated reflection reducing layer with Atomic layer deposition method in the silicon solar cell substrate, the structure of three layers of composite passivated reflection reducing layer is respectively titanium dioxide (TiO from substrate from bottom to top
2) layer, titania/silica (TiO
2/ SiO
2) layer, silicon dioxide (SiO
2) layer.
Described three layers of composite passivated reflection reducing layer thickness are 75～120nm, and the titanium dioxide layer thickness is 30～50nm, and the titania/silica layer thickness is 10～20nm, and the silicon dioxide layer thickness is 40～60nm.。
The preparation method of three layers of composite passivated reflection reducing layer of a kind of solar cell is characterized in that comprising the following steps:
(1) with the preliminary treatment of silicon chip of solar cell substrate and put into atomic layer deposition reaction chamber, the reative cell operating air pressure is transferred to 500Pa～1500Pa, preferred operating air pressure 1000Pa;
(2) reaction chamber temperature is heated to 200 ℃～400 ℃, preferred 200 ℃～250 ℃, utilizes water and titanium tetrachloride (TiCl4) to be forerunner source, deposition of titanium oxide layer;
(3) reaction chamber temperature is heated to 200 ℃～400 ℃, preferred 250 ℃～300 ℃, utilize titanium tetrachloride to be the titanium precursor source, utilize silicon tetrachloride (SiCl
4), or hexachloro-silane (Si
2Cl
6) be silicon forerunner source, utilize water to prepare the titania/silica composite bed for reacting gas;
(4) reaction chamber temperature is heated to 200 ℃～400 ℃, preferred 300 ℃～350 ℃, utilize silicon tetrachloride or hexachloro-silane to be S silicon forerunner source, utilize water to be reacting gas, the deposition of silica layer.
The present invention utilizes the ALD method to prepare three layers of reduced passivation resisting film, have the following advantages: by the design of three-layer composite structure, make the reduced passivation resisting film of preparation possess good dual-use function, particularly due to the design of the composite bed of centre, improve interfacial structure, made the adhesion of whole reduced passivation resisting film further strengthen, stress reduces.The refractive index of three-decker increases gradually simultaneously, SiO
2Layer, TiO
2/ SiO
2Layer, TiO
2Layer, refractive index is respectively between 1.4～1.6,1.8～1.9,2.1～2.3, with respect to SiO
2And TiO
2Double-decker has had further optimization to light path, can significantly promote at the anti-reflection aspect of performance.In addition; utilize the ALD technology; make that the thin film technology temperature is lower, thickness accurately controlled, can adapt to the complex topography substrate, membrane structure is fine and close; greatly reduce energy consumption; be particularly useful for the preparation of passivation film of the solar cell surface of Surface Texture, the defectives such as pore that can avoid conventional method to produce have simultaneously promoted passivation effect greatly; and have repeatability, the controllability of height, be suitable for large-scale production.
Embodiment
The below more fully describe substantive distinguishing features of the present invention by preferred embodiment, but the present invention is not limited only to embodiment with reference to above-mentioned steps.
Embodiment 1:
The silicon chip of solar cell substrate carried out preliminary treatment and puts into atomic layer deposition reaction chamber, the reative cell vacuum is evacuated to 500Pa, reaction chamber temperature is heated to 200 ℃, utilizing H
2O and TiCl
4Be the forerunner source, by controlling the cycle-index control TiO in forerunner source
2Layer thickness is 30nm; Utilize H
2O and TiCl
4, SiCl
4Be the forerunner source, the maintenance operating air pressure is 500Pa, temperature is increased to 250 ℃, alternating deposit TiO
2And SiO
2Monoatomic layer, preparation TiO
2/ SiO
2Composite bed, TiO
2The atom number of plies and SiO
2The atom number of plies keeps 1:1, by controlling the cycle-index adjusting TiO in forerunner source
2/ SiO
2Layer thickness is 5nm; Utilize H
2O and SiCl
4Be the forerunner source, the maintenance operating air pressure is 500Pa, and temperature is increased to 300 ℃, preparation SiO
2Layer is by controlling the cycle-index control SiO in forerunner source
2Layer thickness is 40nm.
Comparative Examples 1:
The silicon chip of solar cell substrate carried out preliminary treatment and puts into atomic layer deposition reaction chamber, the reative cell vacuum is evacuated to 1000Pa, reaction chamber temperature is heated to 200 ℃, utilizing H
2O and TiCl
4Be the forerunner source, by controlling the cycle-index control TiO in forerunner source
2Layer thickness is 30nm; Reaction chamber temperature is heated to 300 ℃, utilizes H
2O and SiCl
4For the forerunner source prepares SiO
2Layer is by controlling the cycle-index control SiO in forerunner source
2Layer thickness is 50nm.
Utilize the light reflectivity of D8 integral refractometer test compound film, between 300～1000nm, the reflectivity of the luminance factor Comparative Examples 1 of embodiment 1 has reduced 21%.Utilize the minority carrier life time measuring instrument, the minority carrier life time of test implementation example 1 and Comparative Examples 1 is respectively 20 μ S and 27 μ S.
Embodiment 2:
The silicon chip of solar cell substrate carried out preliminary treatment and puts into atomic layer deposition reaction chamber, the reative cell vacuum is evacuated to 1000Pa, reaction chamber temperature is heated to 200 ℃, utilizing H
2O and TiCl
4Be the forerunner source, by controlling the cycle-index control TiO in forerunner source
2Layer thickness is 40nm; Utilize H
2O and TiCl
4, SiCl
4Be the forerunner source, the maintenance operating air pressure is 1000Pa, temperature is increased to 250 ℃, alternating deposit TiO
2And SiO
2Monoatomic layer, preparation TiO
2/ SiO
2Composite bed, TiO
2The atom number of plies and SiO
2The atom number of plies keeps 1:1, by controlling the cycle-index adjusting TiO in forerunner source
2/ SiO
2Layer thickness is 8nm; Utilize H
2O and SiCl
4Be the forerunner source, the maintenance operating air pressure is 1000Pa, and temperature is increased to 300 ℃, preparation SiO
2Layer is by controlling the cycle-index control SiO in forerunner source
2Layer thickness is 50nm.After tested, the luminance factor Comparative Examples 1 of the present embodiment has reduced 25%, and minority carrier life time is 38 μ S.
Embodiment 3:
The silicon chip of solar cell substrate carried out preliminary treatment and puts into atomic layer deposition reaction chamber, the reative cell vacuum is evacuated to 1500Pa, reaction chamber temperature is heated to 250 ℃, utilizing H
2O and TiCl
4Be the forerunner source, by controlling the cycle-index control TiO in forerunner source
2Layer thickness is 40nm; Utilize H
2O and TiCl
4, SiCl
4Be the forerunner source, the maintenance operating air pressure is 1500Pa, temperature is remained on 250 ℃, alternating deposit TiO
2And SiO
2Monoatomic layer, preparation TiO
2/ SiO
2Composite bed, TiO
2The atom number of plies and SiO
2The atom number of plies keeps 1:1, by controlling the cycle-index adjusting TiO in forerunner source
2/ SiO
2Layer thickness is 10nm; Utilize H
2O and Si
2Cl
6Be the forerunner source, the maintenance operating air pressure is 1500Pa, and temperature is increased to 300 ℃, preparation SiO
2Layer is by controlling the cycle-index control SiO in forerunner source
2Layer thickness is 60nm.After tested, the luminance factor Comparative Examples 1 of the present embodiment has reduced 30%, and minority carrier life time is 38 μ S.
Embodiment 4:
The silicon chip of solar cell substrate carried out preliminary treatment and puts into atomic layer deposition reaction chamber, the reative cell vacuum is evacuated to 1000Pa, reaction chamber temperature is heated to 400 ℃, utilizing H
2O and TiCl
4Be the forerunner source, by controlling the cycle-index control TiO in forerunner source
2Layer thickness is 50nm; Utilize H
2O and TiCl
4, SiCl
4Be the forerunner source, the maintenance operating air pressure is 1000Pa, temperature is remained on 400 ℃, alternating deposit TiO
2And SiO
2Monoatomic layer, preparation TiO
2/ SiO
2Composite bed, TiO
2The atom number of plies and SiO
2The atom number of plies keeps 1:1, by controlling the cycle-index adjusting TiO in forerunner source
2/ SiO
2Layer thickness is 5nm; Utilize H
2O and SiCl
4Be the forerunner source, the maintenance operating air pressure is 1000Pa, and temperature is remained on 400 ℃, preparation SiO
2Layer is by controlling the cycle-index control SiO in forerunner source
2Layer thickness is 60nm.After tested, the luminance factor Comparative Examples 1 of the present embodiment has reduced 26%, and minority carrier life time is 35 μ S.
Embodiment 5:
The silicon chip of solar cell substrate carried out preliminary treatment and puts into atomic layer deposition reaction chamber, the reative cell vacuum is evacuated to 1000Pa, reaction chamber temperature is heated to 200 ℃, utilizing H
2O and TiCl
4Be the forerunner source, by controlling the cycle-index control TiO in forerunner source
2Layer thickness is 40nm; Utilize H
2O and TiCl
4, Si
2Cl
6Be the forerunner source, the maintenance operating air pressure is 1000Pa, temperature is heated to 300 ℃, alternating deposit TiO
2And SiO
2Monoatomic layer, preparation TiO
2/ SiO
2Composite bed, TiO
2The atom number of plies and SiO
2The atom number of plies keeps 1:1, by controlling the cycle-index adjusting TiO in forerunner source
2/ SiO
2Layer thickness is 8nm; Utilize H
2O and SiCl
4Be the forerunner source, the maintenance operating air pressure is 1000Pa, and temperature is heated to 400 ℃, preparation SiO
2Layer is by controlling the cycle-index control SiO in forerunner source
2Layer thickness is 60nm.After tested, the luminance factor Comparative Examples 1 of the present embodiment has reduced 34%, and minority carrier life time is 42 μ S.
Claims (3)
1. three layers of composite passivated reflection reducing layer of a solar cell, it is characterized in that, prepare a kind of three layers of composite passivated reflection reducing layer with Atomic layer deposition method in the silicon solar cell substrate, the structure of three layers of composite passivated reflection reducing layer is respectively titanium dioxide (TiO from substrate from bottom to top
2) layer, titania/silica (TiO
2/ SiO
2) layer, silicon dioxide (SiO
2) layer.
2. three layers of composite passivated reflection reducing layer of a kind of solar cell according to claim 1, it is characterized in that, described three layers of composite passivated reflection reducing layer thickness are 75～120nm, the titanium dioxide layer thickness is 30～50nm, the titania/silica layer thickness is 10～20nm, and the silicon dioxide layer thickness is 40～60nm.
3. according to claim 1, or the preparation method of three layers of composite passivated reflection reducing layer of 2 described a kind of solar cells, it is characterized in that comprising the following steps:
(1) with the preliminary treatment of silicon chip of solar cell substrate and put into atomic layer deposition reaction chamber, the reative cell operating air pressure is transferred to 500Pa～1500Pa, preferred operating air pressure 1000Pa;
(2) reaction chamber temperature is heated to 200 ℃～400 ℃, preferred 200 ℃～250 ℃, utilizes water and titanium tetrachloride (TiCl4) to be forerunner source, deposition of titanium oxide layer;
(3) reaction chamber temperature is heated to 200 C～400 ℃, preferred 250 ℃～300 ℃, utilize titanium tetrachloride to be the titanium precursor source, utilize silicon tetrachloride (SiCl
4), or hexachloro-silane (Si
2Cl
6) be silicon forerunner source, utilize water to prepare the titania/silica composite bed for reacting gas;
(4) reaction chamber temperature is heated to 200 ℃～400 ℃, preferred 300 ℃～350 ℃, utilize silicon tetrachloride or hexachloro-silane to be S silicon forerunner source, utilize water to be reacting gas, the deposition of silica layer.
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| CN201110392239.4A CN103137714B (en) | 2011-12-01 | 2011-12-01 | A kind of three layers of composite passivated reflection reducing layer of solaode and preparation method |
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| CN201110392239.4A CN103137714B (en) | 2011-12-01 | 2011-12-01 | A kind of three layers of composite passivated reflection reducing layer of solaode and preparation method |
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| CN103137714B CN103137714B (en) | 2016-09-21 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105668622A (en) * | 2015-07-30 | 2016-06-15 | 四川大学 | Film coating method for titanium dioxide through vapor atomic deposition |
| CN105870249A (en) * | 2016-03-24 | 2016-08-17 | 江苏微导纳米装备科技有限公司 | Fabrication process of crystalline silicon solar cell |
| CN109994553A (en) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft |
| WO2022042250A1 (en) * | 2020-08-27 | 2022-03-03 | 中国科学院上海光学精密机械研究所 | Dichroic mirror based on sandwich-like structure interface and composite material and preparation method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58191478A (en) * | 1982-05-04 | 1983-11-08 | Matsushita Electric Ind Co Ltd | Method for formation of reflection preventing film for solar battery |
| CN101577294A (en) * | 2009-06-25 | 2009-11-11 | 中南大学 | Double-layer anti-reflecting film of crystal silicon solar cell and preparation method thereof |
| CN102005485A (en) * | 2010-10-12 | 2011-04-06 | 浙江首科科技有限公司 | Multilayer anti-reflection film for solar cell and preparation method thereof |
| CN102157570A (en) * | 2011-01-11 | 2011-08-17 | 上海太阳能电池研究与发展中心 | Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof |
| CN102222704A (en) * | 2011-06-27 | 2011-10-19 | 光为绿色新能源有限公司 | Crystalline silicon solar battery three-layer antireflection film and preparation method thereof |
-
2011
- 2011-12-01 CN CN201110392239.4A patent/CN103137714B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58191478A (en) * | 1982-05-04 | 1983-11-08 | Matsushita Electric Ind Co Ltd | Method for formation of reflection preventing film for solar battery |
| CN101577294A (en) * | 2009-06-25 | 2009-11-11 | 中南大学 | Double-layer anti-reflecting film of crystal silicon solar cell and preparation method thereof |
| CN102005485A (en) * | 2010-10-12 | 2011-04-06 | 浙江首科科技有限公司 | Multilayer anti-reflection film for solar cell and preparation method thereof |
| CN102157570A (en) * | 2011-01-11 | 2011-08-17 | 上海太阳能电池研究与发展中心 | Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof |
| CN102222704A (en) * | 2011-06-27 | 2011-10-19 | 光为绿色新能源有限公司 | Crystalline silicon solar battery three-layer antireflection film and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105668622A (en) * | 2015-07-30 | 2016-06-15 | 四川大学 | Film coating method for titanium dioxide through vapor atomic deposition |
| CN105870249A (en) * | 2016-03-24 | 2016-08-17 | 江苏微导纳米装备科技有限公司 | Fabrication process of crystalline silicon solar cell |
| CN109994553A (en) * | 2019-04-30 | 2019-07-09 | 通威太阳能（成都）有限公司 | Three layers of dielectric passivation film PERC solar cell of one kind and manufacture craft |
| WO2022042250A1 (en) * | 2020-08-27 | 2022-03-03 | 中国科学院上海光学精密机械研究所 | Dichroic mirror based on sandwich-like structure interface and composite material and preparation method therefor |
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| CN103137714B (en) | 2016-09-21 |
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