CN105870249A - Fabrication process of crystalline silicon solar cell - Google Patents
Fabrication process of crystalline silicon solar cell Download PDFInfo
- Publication number
- CN105870249A CN105870249A CN201610174023.3A CN201610174023A CN105870249A CN 105870249 A CN105870249 A CN 105870249A CN 201610174023 A CN201610174023 A CN 201610174023A CN 105870249 A CN105870249 A CN 105870249A
- Authority
- CN
- China
- Prior art keywords
- source
- technique
- plasma
- layer deposition
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 135
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 230000008569 process Effects 0.000 title abstract description 34
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 63
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000005516 engineering process Methods 0.000 claims abstract description 37
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 145
- 239000010408 film Substances 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- 239000011248 coating agent Substances 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 28
- 238000010926 purge Methods 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 238000002360 preparation method Methods 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 239000013078 crystal Substances 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 22
- 210000002268 wool Anatomy 0.000 claims description 22
- 235000008216 herbs Nutrition 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 239000011241 protective layer Substances 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 9
- 229910007161 Si(CH3)3 Inorganic materials 0.000 claims description 8
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 8
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 8
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 8
- 229910000091 aluminium hydride Inorganic materials 0.000 claims description 4
- 229910003978 SiClx Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 30
- 229910004205 SiNX Inorganic materials 0.000 abstract description 29
- 238000006243 chemical reaction Methods 0.000 abstract description 28
- 229910052593 corundum Inorganic materials 0.000 abstract description 19
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 19
- 229910052681 coesite Inorganic materials 0.000 abstract description 16
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 16
- 229910052682 stishovite Inorganic materials 0.000 abstract description 16
- 229910052905 tridymite Inorganic materials 0.000 abstract description 16
- 229910021418 black silicon Inorganic materials 0.000 abstract description 10
- 238000007747 plating Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 7
- 238000003475 lamination Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000010276 construction Methods 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 10
- 230000009466 transformation Effects 0.000 description 9
- 208000002925 dental caries Diseases 0.000 description 8
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000002253 acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 241000628997 Flos Species 0.000 description 2
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the field of fabrication of a solar cell, in particular to a surface passivation and anti-reflection technology of crystalline silicon cell for improving photoelectric conversion efficiency. Aiming at the existing cell technology process flow, nanometer lamination of a material such as SiO2, Al2O3 and SiNx and a composite material are fabricated by atomic layer deposition and plasma atomic layer deposition, passivation layer plating is carried out on the front surface and the back surface of the crystalline silicon cell, so that the minority carrier lifetime is prolonged, and the photoelectric conversion efficiency of the cell is improved; and SiNx anti-reflection layer plating can be continuously carried out after passivation layer plating, so that passivation and anti-reflection processes can be integrated in the same flow, the cost is reduced, and the yield is improved. The fabrication method is particularly and suitably used for combining with a black silicon technology, and multiple processes are avoided; and moreover, for a double-sided battery, the fact that double-sided passivation is carried out by using the fabrication method is a necessary choice.
Description
Technical field
The present invention relates to solaode and manufacture field, be specifically related to improving the surface passivation of crystal silicon battery and the anti-reflection technology of photoelectric transformation efficiency.
Background technology
Efficiently crystal silicon battery is an important development trend of photovoltaic industry.Being all the necessary means that high-efficiency battery manufactures for increasing the photoelectric transformation efficiency of crystal silicon battery, surface wool manufacturing and passivation technology to greatest extent, such as passivation emitter back side battery, i.e. PERC battery technology receives much concern.And battery production technology is also being updated further and is being improved.The most black silicon technology combines back of the body passivating technique and can reach the conversion efficiency of more than 20%.
Being different from common acids method making herbs into wool, the black silicon technology of RIE etch of present stage Devoting Major Efforts To Developing can carry out deep etching to crystal silicon surface, thus forms high-aspect-ratio hole, more effectively reduces the battery surface reflection loss to light, increases photoelectric transformation efficiency.The Another reason of the development of black silicon technology is the importing of diamond wire cutting silicon ingot technology.Diamond wire cutting can be greatly lowered polysilicon chip cost, but traditional processed with acid floss cannot realize effective making herbs into wool, and RIE black silicon making herbs into wool upper solution diamond wire cutting can bring the difficulty on process for etching.But, there is the black silicon technology of high-aspect-ratio hole to lower one base SiNxAnti-reflection layer technique proposes new challenge.Owing to existing anti-reflection layer uses SiN based on PECVDxTechnique, it is impossible to relatively deep holes is completely covered, after therefore RIE etch completes, in addition it is also necessary to increase by one wet method flatening process to reduce hole depth-to-width ratio.Add the most again complexity and the cost of technique.
On the other hand, passivating technique improves the main path of battery efficiency has two: one to be to reduce the surface defect density of states, and i.e. generally the chemical passivation (Chemical passivation) of indication, mainly utilizes thermal oxidation method SiO2Carry out saturated dangling bonds and reduce surface state；Two is to reduce surface free electron or hole concentration, the most usual indication field effect passivation (Field effect passivation), the aluminum back surface field passivation of such as conventional p-type battery, plasma reinforced chemical vapour deposition (PECVD) method prepares silicon nitride (SiNx), non-crystalline silicon (a-Si), SiO2/SiNxStacking is passivated, and ALD prepares Al2O3Etc. thin film technique.But mix mode due to there is multiple crystal silicon, cause thin film passivation technique to tend to complicated, even same process (such as SiNx) battery surface and the back side need to be passivated plated film respectively.Cause high cost.Al is generated using ALD2O3Also require that without around plating during one side back of the body passivation technology, it is to avoid cause the visual impact on crystal silicon battery surface.Factors above proposes the biggest challenge to filming equipment design, and production cost cannot reduce.
Ald (Atomic Layer Deposition, ALD) technology is a Nanometer thin film deposition technology based on surface chemistry gas phase is reacted.As shown in Figure 1, it is by being introduced separately reaction chamber by two or more chemical source, therebetween the gas phase product after the saturated reaction of surface and unreacted gas are purged clean, material can be plated in substrate surface with monatomic form membrane, in the range of therefore the thickness of the thin film deposited and the uniformity can being accurately controlled in atomic layer level thickness.Being different from traditional evaporating deposition technique, ALD technique has at on-plane surface labyrinth and the three dimensional structure surface formation special performance such as high-quality, free of pinholes, conformality thin film.Currently, ald (ALD) technology, as one of state-of-the-art film deposition techniques, is widely used to the microelectronics manufacturing industry of advanced person.Owing to conventional crystalline silicon battery surface structure is relatively easy, the high-quality that therefore ALD technique is unique, the special performance such as free of pinholes, conformality thin film is not fully utilized.As in figure 2 it is shown, the what is called that formed of conventional wet lay processed with acid floss " pyramid " its depth-to-width ratio is less, and PECVD anti-reflection layer can be at its matte direct formation of film at surface；But the matte of the high-aspect-ratio that RIE etch is formed, tradition PECVD anti-reflection layer cannot cover bottom pile layer, causes defect.Utilize ALD technique that the matte of labyrinth just can be completely covered.Therefore volume production is gradually realized along with black silicon technology, apparent to the demand of the ALD technique that can solve the problem that at high-aspect-ratio surface coating.Further, since ALD is the reaction of granule surface contral, it is particularly suitable for batch and loads, all substrate surfaces being exposed in reacting gas are carried out plated film.
Summary of the invention
1, the technical problem to be solved
The present invention be directed to the technological process of existing battery technology, deposit (PEALD) with ald (ALD) and Plasma-Atomic layer and manufacture SiO2、Al2O3、SiNxIn nano-stack and the composite of material, the tow sides of crystal silicon battery are passivated a layer coating film treatment simultaneously, thus extend minority carrier life time, promote the photoelectric transformation efficiency of battery.Passivation layer plated film can proceed with SiN after completingxAnti-reflection layer plated film, thus can integrated be passivated, anti-reflection technique in same flow process, reduce cost, improve production capacity.Present invention is particularly suitable for being combined with black silicon technology, it is to avoid multiple technique.It addition, for double-side cell, use the present invention to carry out the selection that passivation on double surfaces is necessary especially simultaneously.
2, the technical scheme that the present invention provides
Deposit (PEALD) both process technologies based on ald (ALD) and Plasma-Atomic layer and prepare functional film SiO on cell piece surface2/Al2O3/SiNxAnd SixAlyOz/SiNx, it is possible to it is used for producing in enormous quantities, variety classes crystal silicon battery is passivated and anti-reflection plated film.Commaterial plated film is carried out at crystal silicon battery tow sides simultaneously, and multiple material once can complete in same reaction cavity.
Preparation SiO2/Al2O3/SiNxThe concrete technical scheme of composite construction is as follows:
The manufacturing process of a kind of crystal silicon solar batteries, uses technique for atomic layer deposition or Plasma-Atomic layer deposition techniques, mainly comprises the steps:
(1) on pending cell piece two sides, prepare silica membrane by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques simultaneously:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3One in Cl, oxygen source is H2O、H2O2、O3In one；
Technological parameter: technological temperature is 20-300 DEG C, technique vacuum range 1-100torr, silicon source and pulse of oxygen source time, the inert gas purge time after each reacting gas pulse completes was between 0.01 second-30 seconds respectively between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2Choosing of one in O, chemical source and technological parameter is identical with this step Atom layer deposition techniques；The working range of plasma generator be power at 100-5000 watt, frequency is 50 KHz-50 megahertzs；
(2) two sides of the cell piece processed in step (1), prepares aluminium sesquioxide thin film by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques simultaneously:
Chemical source: aluminum source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one；Oxygen source is H2O、H2O2、O3In one；
Technological parameter: technological temperature is 50-300 DEG C, technique vacuum range 1-100torr, aluminum source and pulse of oxygen source time, the inert gas purge time after each reacting gas pulse completes was between 0.01 second-30 seconds respectively between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2Choosing of one in O, chemical source and technological parameter is identical with this step Atom layer deposition techniques；The working range of plasma generator is that power is at 100-5000 watt, the two sides of the cell piece that frequency processes in step (2) in 50 KHz-50 megahertzs (3), prepares silicon nitride film by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques simultaneously:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3One in Cl, nitrogen source is NH3、N2H2In one；
Technological parameter: technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length, the inert gas purge time after each reacting gas pulse completes was between 0.01 second-30 seconds respectively between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/N2In one, wherein use H2/N2Time, H2Concentration is H2/N21-50%；Chemical source is identical with this step Atom layer deposition techniques with choosing of technological parameter；The working range of plasma generator be power at 100-5000 watt, frequency is 50 KHz-50 megahertzs；
Wherein step (1) and step (2) are carried out in same cavity, and step (3) selects to carry out in same cavity or different cavity body with step (1) and step (2) according to practical situation.
The structure of the cell piece that above-mentioned processes is good and the concrete function of each functional film is used to be: two surfaces of cell piece are followed successively by silica membrane, aluminium sesquioxide thin film, silicon nitride film；Wherein, silica membrane is as transition zone, and aluminium sesquioxide thin film is as passivation layer, and the silicon nitride film in cell piece front is as anti-reflection layer, and the silicon nitride film at the cell piece back side is as protective layer.
The thickness range using each functional film that above-mentioned processes is good is: in step (1), the silica-film thickness of preparation is between 0.1-50nm；In step (2), the aluminium sesquioxide film thickness of preparation is between 0.1-50nm；In step (3), the silicon nitride film thickness of preparation is between 50-200nm.Wherein, the preferred thickness range of each functional film is: in step (1), the silica-film thickness of preparation is between 0.1-10nm；In step (2), the silica-film thickness of preparation is between 1-10nm；In step (3), the silicon nitride film thickness of preparation is between 50-100nm.
Preparation SixAlyOz/SiNxThe concrete technical scheme of composite construction is as follows:
The manufacturing process of a kind of crystal silicon solar batteries, uses technique for atomic layer deposition or Plasma-Atomic layer deposition techniques, mainly comprises the steps:
(1) on pending cell piece two sides, simultaneously by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques preparation oxidation sial laminated film:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3One in Cl, aluminum source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one；Oxygen source is H2O、H2O2、O3In one；
Technological parameter: technological temperature is 50-300 degree, technique vacuum range 1-100torr, silicon source, aluminum source and pulse of oxygen source time are respectively between 0.01 second-30 seconds, silicon source, using certain cycle pulse mode between aluminum source and oxygen source, the inert gas purge time after each reacting gas pulse completes is between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2Choosing of one in O, chemical source and technological parameter is identical with this step Atom layer deposition techniques；The working range of plasma generator be power at 100-5000 watt, frequency is 50 KHz-50 megahertzs
(2) two sides of the cell piece processed in step (1), prepares silicon nitride film by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques simultaneously:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3One in Cl, nitrogen source is NH3、N2H2In one；
Technological parameter: technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length, the inert gas purge time after each reacting gas pulse completes was between 0.01 second-30 seconds respectively between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/N2In one, wherein use H2/N2Time, H2Concentration is H2/N21-50%；Chemical source is identical with this step Atom layer deposition techniques with choosing of technological parameter；The working range of plasma generator be power at 100-5000 watt, frequency is 50 KHz-50 megahertzs
Wherein step (1) and step (2) select to carry out in same cavity or different cavity body according to practical situation.
Wherein, in step (1), the pulse mode of silicon source, aluminum source and oxygen source is the one in following pulse mode:
The source pulse of (a) silicon, inert gas purge, pulse of oxygen source, inert gas purge, the pulse of aluminum source, inert gas purge, pulse of oxygen source, inert gas purge, so circulates, reaches predetermined thin film thickness；
The source pulse of (b) silicon, inert gas purge, the pulse of aluminum source, inert gas purge, pulse of oxygen source, inert gas purge, so circulates, reaches predetermined thin film thickness；
C () silicon source and the pulse simultaneously of aluminum source, inert gas purge, pulse of oxygen source, inert gas purge, so circulate, reach predetermined thin film thickness.
The structure of the cell piece that above-mentioned processes is good and the concrete function of each functional film is used to be: two surfaces of cell piece are followed successively by oxidation sial laminated film, silicon nitride film；Wherein, oxidation sial laminated film is as passivation layer, and the silicon nitride film in cell piece front is as anti-reflection layer, and the silicon nitride film at the cell piece back side is as protective layer.
The thickness range using each functional film that above-mentioned processes is good is: in step (1), the oxidation sial laminated film thickness of preparation is at 0.1-50nm；In step (2), the silicon nitride film thickness of preparation is between 50-200nm.Wherein, the preferred thickness range of each functional film is: in step (1), the oxidation sial laminated film thickness of preparation is between 1-10nm；In step (2), the silicon nitride film thickness of preparation is between 50-100nm.
Use cell piece structure prepared by above-mentioned technique, there is the one in having structure:
(1) upper surface at substrate has the launch site corresponding with substrate conducting type; one upper surface making herbs into wool layer; one upper surface anti-reflection layer; one upper surface and the identical functional film of back side thickness; its upper surface is as additional anti-reflection layer; the back side as passivation layer, a back-protective layer, a upper surface and back side wire.
(2) upper surface at substrate has the launch site corresponding with substrate conducting type; one upper surface making herbs into wool layer; one upper surface and the identical passivation layer of back side thickness; one upper surface and the identical functional film of back side thickness; its upper surface is as anti-reflection layer; the back side as protective layer, a upper surface and back side wire.
(3) two sides at substrate has the launch site corresponding with substrate conducting type, a two-sided making herbs into wool layer, the passivation layer that a double thickness is identical, the anti-reflection layer that a double thickness is identical, a upper surface and back side wire.
3, the technical scheme using the present invention to provide, compared with existing known technology, has a following remarkable result:
(1) commaterial plated film is carried out at crystal silicon battery tow sides simultaneously, it is to avoid repeatedly coating single side technique, simplifies battery manufacture program, improves production capacity, reduces cost simultaneously.The present invention utilizes technique for atomic layer deposition principle, is dependent on the reaction of saturation type chemical surface and the thin film deposition that completes, non-directional to reactant gas flow, selectivity.Cell piece is the most only needed to be in reacting gas atmosphere, just can self-assembling formation double-sided coating.The passivation of existing cell piece and anti-reflection technique all continue to use the film plating process of PECVD, owing to PECVD is the directive film deposition techniques of a kind of tool, therefore can be only done the coating single side in the face of reactant gas flow approach, and the flow velocity of reacting gas and concentration are distributed and film thickness, the uniformity and quality of forming film are had a direct impact by the response time.Therefore cannot complete on cell piece two sides can the technological requirement of uniform coated.If needing two-sided processing, then cell piece must be carried out machinery upset, then carry out the plated film of second time same process in being reapposed over reaction chamber.It is clear that this method not only complex process, and add cost, reduce production capacity, be not suitable for the production in enormous quantities of cell piece.
(2) passivation layer and anti-reflection layer that technique for atomic layer deposition generates are utilized, there is the shape-retaining ability stepcoverage performance of 100% (i.e. close to) of excellence, can form, at the deep hole that RIE causes, the uniform thin film that high-quality is free of pinholes, and be no longer necessary to wet method flatening process；As in figure 2 it is shown, owing to the silicon nitride of PECVD has directivity, it is impossible to bottom pile layer, form the thin film being completely covered, or the film quality formed is poor, have pin hole；Therefore bottom pile layer, form defect, these defects may result in the reduction of battery conversion efficiency, and therefore prior art must carry out wet method reparation again to the deep hole that RIE is formed, and could use passivation layer and the anti-reflection layer of PECVD, on the other hand, the reflectance of black silicon can but be increased.And the present invention utilizes guarantor's type characteristic of technique for atomic layer deposition, directly RIE making herbs into wool layer can be passivated and anti-reflection plated film, and can naturally repair the deep zone defect bottom pile layer, keep the reflectance of the black silicon technology of RIE.
(3) can freely arrange in pairs or groups between passivation technology and anti-reflection technique, select according to actual needs to carry out in same reaction chamber or different reaction chambers.For a kind of cell piece structure described in claim 10; may select and be passivated respectively and anti-reflection technique at differential responses intracavity; existing coating single side PECVD reaction chamber can be made full use of and carry out anti-reflection layer and protective layer plated film, and utilize the ald reaction chamber of double-sided coating to be passivated a layer plated film.Make full use of existing equipment, reduce cost.For the cell piece structure described in claim 11 and 12, then may select and carry out in same reaction chamber, reduce equipment amount, reduce cost.
(4) N-shaped, p-type battery all can use this technique, the versatility having had.Multiple battery can reach to promote further the effect of battery performance.Comparing with existing common PE RC battery, the double-sided coating film passivated layer utilizing technique for atomic layer deposition to generate can promote battery conversion efficiency close to 1%.For a kind of cell piece structure described in claim 10, the ALD additional passivation film of upper surface can also repair the microdefect of PECVD antireflective film, thus improves cell piece service life.
The common monocrystalline silicon battery photoelectric transformation efficiency of table 1 and the PERC battery testing results contrast with different structure ALD double-sided coating
Accompanying drawing explanation
Fig. 1 ALD principle schematic
Fig. 2 ALD Yu PECVD Performance comparision conformal to making herbs into wool layer
Two-sided plating passivation layer (double layer material) structure chart after Fig. 3 A common batteries anti-reflection layer technique; wherein: 100 crystalline silicon substrate (monocrystalline, polycrystalline; n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers; 112 making herbs into wool layers; 120 passivation layers, 121 first passivation layers, 122 second passivation layers; 131 front anti-reflection layers, 132 back-protective layers.
Two-sided plating ALD/PEALD passivation layer (double layer material)/anti-reflection layer membrane structure figure after Fig. 3 B common batteries flocking cleaning; wherein: 100 crystalline silicon substrate (monocrystalline, polycrystalline; n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers; 112 making herbs into wool layers; 120 passivation layers, 121 first passivation layers, 122 second passivation layers; 130 (131) front anti-reflection layers, 130 (132) back-protective layers.
Fig. 3 C double-side cell double-sided coating ALD/PEALD passivation layer (double layer material)/anti-reflection layer membrane structure figure, wherein: 100 crystalline silicon substrate (monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layers, 120 passivation layers, 121 first passivation layers, 122 second passivation layers, 130 front anti-reflection layers and back side anti-reflection layer.
Two-sided plating passivation layer (composite) structure chart after Fig. 3 D common batteries anti-reflection layer technique; wherein: 100 crystalline silicon substrate (monocrystalline, polycrystalline; n, p-type); 110 diffusion layers and making herbs into wool layer; 111 diffusion layers, 112 making herbs into wool layers, 131 front anti-reflection layers; 132 back-protective layers, 140 composite passivation layers.
Two-sided plating ALD/PEALD passivation layer (composite)/anti-reflection layer membrane structure after Fig. 3 E common batteries flocking cleaning
Figure, wherein: 100 crystalline silicon substrate (monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layers, 130 front anti-reflection layers and back-protective layer, 140 composite passivation layers.
The process flow diagram that Fig. 4 A Fig. 3 A structure correspondence technological process realizes at different cavitys.
The process flow diagram that Fig. 4 B-1 Fig. 3 B structure correspondence technological process realizes at same cavity.
The process flow diagram that Fig. 4 B-2 Fig. 3 B structure correspondence technological process realizes at different cavitys.
The process flow diagram that Fig. 4 C Fig. 3 C-structure correspondence technological process realizes at same or different cavitys.
The process flow diagram that Fig. 4 D Fig. 3 D structure correspondence technological process realizes at different cavitys.
The process flow diagram that Fig. 4 E Fig. 3 E structure correspondence technological process realizes at same cavity or different cavity.
Detailed description of the invention
Below in conjunction with Figure of description and specific embodiment, the present invention is described in detail.
Embodiment 1 prepares common PE RC battery anti-reflection layer and ALD passivation layer technique
Employing the method comprises the steps of firstly, preparing common PE RC battery structure and anti-reflection layer, then carries out the technique of ALD technique double-sided coating film passivated layer, uses different reaction cavities and technological parameter, can prepare SiNx/SiO2/Al2O3/SiNxComposite construction, enforcement and the composite construction prepared of concrete technological parameter are as follows:
SiN prepared by table 2x/SiO2/Al2O3/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 A), concrete technology is shown in Fig. 4 A
Note: wherein step 121 and step 122 carry out carrying out PEALD or PECVD coating single side in double-sided coating, step 131 and step 132 select different cavity body according to practical situation in same cavity simultaneously.
Wherein, preferred embodiment is:
SiN prepared by table 3x/Al2O3/SiNxThe parameter of the preferred embodiment of composite construction (Fig. 3 A), concrete technology is shown in Fig. 4 A
Note: wherein step 120 carries out double-sided coating, step 131 and step 132 in ald chamber body simultaneously and carries out coating single side in same PECVD cavity.
According to the photovoltaic cell manufactured by table 2 technique, the conversion efficiency result such as table 4 below obtained by its measurement.Visible use ALD technique carries out the Al2O3 passivation layer of double-sided coating manufacture and compares with common batteries, and photoelectric transformation efficiency improves 1%.
The common monocrystalline silicon battery photoelectric transformation efficiency of table 4 with through ALD double-sided coating Al2O3The result of the test of the PERC battery (Fig. 3 A) of passivation layer compares
Embodiment 2 prepares common PE RC battery ALD passivation layer and the technique of PEALD anti-reflection layer/protective layer
Use and the method comprises the steps of firstly, preparing the ALD passivation layer double-sided coating of PERC battery structure, then carry out the technique of PEALD or PECVD anti-reflection layer and passivation layer, use same ALD/PEALD reaction cavity and technological parameter, SiN can be preparedx/SiO2/Al2O3/SiNxComposite construction, enforcement and the composite construction prepared of concrete technological parameter are as follows:
SiN prepared by table 5x/SiO2/Al2O3/SiNxThe parameter (using same ALD/PEALD reaction cavity, concrete technology flow process is shown in Fig. 4 B-1) of the specific embodiment of composite construction (Fig. 3 B)
Note: wherein step 121 and step 122 carry out double-sided coating in same cavity simultaneously, step 130 is adjusted cavity temperature according to practical situation at same cavity and carries out PEALD double-sided coating.
Embodiment 3 prepares common PE RC battery ALD passivation layer and the technique of PEALD/PECVD anti-reflection layer/protective layer
Use and the method comprises the steps of firstly, preparing the ALD passivation layer double-sided coating of PERC battery structure, then carry out the technique of PEALD or PECVD anti-reflection layer and passivation layer, use different ALD/PEALD/PECVD reaction cavity and technological parameter, SiN can be preparedx/SiO2/Al2O3/SiNxComposite construction, enforcement and the composite construction prepared of concrete technological parameter are as follows:
SiN prepared by table 6x/SiO2/Al2O3/SiNxThe parameter (using different ALD/PEALD/PECVD reaction cavity, concrete technology flow process is shown in Fig. 4 B-2) of the specific embodiment of composite construction (Fig. 3 B)
Note: wherein step 120 carries out double-sided coating in ald chamber body simultaneously, step 130 carries out double-sided coating in different PEALD cavitys simultaneously, or carries out coating single side in PECVD cavity respectively.
Wherein, preferred embodiment is:
SiN prepared by table 7x/SiO2/Al2O3/SiNxThe parameter (using different ALD/PEALD/PECVD reaction cavity, concrete technology flow process is shown in Fig. 4 B-2) of the preferred embodiment of composite construction (Fig. 3 B)
According to the photovoltaic cell manufactured by table 6 technique, the conversion efficiency result such as following table obtained by its measurement.Visible use ALD and technology carry out the SiN of double-sided coating manufacturex/SiO2/Al2O3/SiNxThe passivation layer of composite construction compares with common batteries, and photoelectric transformation efficiency improves nearly 1%.
The common monocrystalline silicon battery photoelectric transformation efficiency of table 8 with ALD double-sided coating SiO2/Al2O3The result of the test of the PERC battery of passivation layer compares
The technique that embodiment 4 prepares ALD/PEALD passivation layer and anti-reflection layer
Use the ALD passivation layer preparing double-side cell structure and the technique of PEALD anti-reflection layer of the present invention, use same or different ALD/PEALD reaction cavities and technological parameter, SiN can be preparedx/SiO2/Al2O3/SiNxComposite construction, enforcement and the composite construction prepared of concrete technological parameter are as follows:
SiN prepared by table 9x/SiO2/Al2O3/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 C), concrete technology is shown in Fig. 4 C
Note: wherein step 120 carries out double-sided coating in ald chamber body simultaneously, step 130 is adjusted cavity temperature at same or different PEALD cavitys and carries out double-sided coating simultaneously.
Embodiment 5 prepares common PE RC battery anti-reflection layer and ALD passivation layer technique
The anti-reflection layer of common PE RC battery structure prepared by the employing present invention and the technique of passivation layer, use different reaction cavities and technological parameter, can prepare SiNx/SixAlyOz/SiNxComposite construction, enforcement and the composite construction prepared of concrete technological parameter are as follows:
SiN prepared by table 10x/SixAlyOz/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 D), concrete technology is shown in Fig. 4 D
Note: wherein step 140 carries out carrying out PEALD or PECVD coating single side in double-sided coating, step 131 and step 132 select different cavity body according to practical situation in ald chamber body simultaneously.
Wherein, preferred embodiment is:
SiN prepared by table 11x/SixAlyOz/SiNxThe parameter of the preferred embodiment of composite construction (Fig. 3 D), concrete technology is shown in Fig. 4 D
Note: wherein step 140 carries out double-sided coating, step 131 and step 132 in ald chamber body simultaneously and carries out coating single side in different PECVD cavitys.
Embodiment 6 prepares common PE RC battery ALD passivation layer and PEALD/PECVD anti-reflection layer and the technique of protective layer
Use the ALD passivation layer of preparation common PE RC battery structure of the present invention and PEALD/PECVD anti-reflection layer and the technique of protective layer, use same ALD/PEALD reaction cavity or difference ALD/PECVD reaction cavity and technological parameter, SiN can be preparedx/SixAlyOz/SiNxComposite construction, enforcement and the composite construction prepared of concrete technological parameter are as follows:
SiN prepared by table 12x/SixAlyOz/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 E), concrete technology is shown in Fig. 4 E
Note: wherein step 140 carries out double-sided coating in ald chamber body simultaneously, step 130 at same cavity according to practical situation or is adjusted cavity temperature at different cavitys and carries out PEALD double-sided coating.
Below schematically creation and embodiment thereof to the present invention is described, and protection scope of the present invention includes but not limited to the description above.Shown in accompanying drawing is also one of embodiment of the invention, and actual structure is not limited thereto.So; if those of ordinary skill in the art is enlightened by the present invention; in the case of without departing from the creation objective of the present invention, design the frame mode similar to technical scheme and embodiment without creative, the protection domain of this patent all should be belonged to.
Claims (10)
1. the manufacturing process of a crystal silicon solar batteries, it is characterised in that: use technique for atomic layer deposition or Plasma-Atomic layer
Deposition technique, mainly comprises the steps:
(1) on pending cell piece two sides, prepare two by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques simultaneously
Silicon oxide film:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One, oxygen source is H2O、H2O2、O3In one；
Technological parameter: technological temperature is 20-300 DEG C, technique vacuum range 1-100torr, silicon source and pulse of oxygen source time are respectively 0.01
Between-30 seconds seconds, the inert gas purge time after each reacting gas pulse completes is between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2One in O,
Chemical source is identical with this step Atom layer deposition techniques with choosing of technological parameter；The working range of plasma generator is power
At 100-5000 watt, frequency is 50 KHz-50 megahertzs；
(2) two sides of the cell piece processed in step (1), is sunk by technique for atomic layer deposition or Plasma-Atomic layer simultaneously
Long-pending technology prepares aluminium sesquioxide thin film:
Chemical source: aluminum source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one；Oxygen source is H2O、H2O2、O3In
One；
Technological parameter: technological temperature is 50-300 DEG C, technique vacuum range 1-100torr, aluminum source and pulse of oxygen source time are respectively 0.01
Between-30 seconds seconds, the inert gas purge time after each reacting gas pulse completes is between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2One in O,
Chemical source is identical with this step Atom layer deposition techniques with choosing of technological parameter；The working range of plasma generator is power
At 100-5000 watt, frequency is 50 KHz-50 megahertzs
(3) two sides of the cell piece processed in step (2), is sunk by technique for atomic layer deposition or Plasma-Atomic layer simultaneously
Long-pending technology prepares silicon nitride film:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One, nitrogen source is NH3、N2H2In one；
Technological parameter: technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length are respectively 0.01
Between-30 seconds seconds, the inert gas purge time after each reacting gas pulse completes is between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/N2
In one, wherein use H2/N2Time, H2Concentration is H2/N21-50%；Choosing and this step of chemical source and technological parameter
Rapid Atom layer deposition techniques is identical；The working range of plasma generator be power at 100-5000 watt, frequency is at 50 kilo hertzs
Hereby-50 megahertzs；
Wherein step (1) and step (2) are carried out in same cavity, step (3) according to practical situation select with step (1) and
Step (2) is carried out in same cavity or different cavity body.
2. according to the manufacturing process of a kind of crystal silicon solar batteries described in claim 1 any one, it is characterised in that: described technique
The double-sided coating structure preparing battery is: two surfaces of cell piece are followed successively by silica membrane, aluminium sesquioxide thin film, nitrogen
SiClx thin film；Wherein, silica membrane is as the first passivation layer, and aluminium sesquioxide thin film is as the second passivation layer, cell piece
The silicon nitride film in front is as anti-reflection layer, and the silicon nitride film that the cell piece back side concurrently forms is as protective layer.
3. according to the manufacturing process of a kind of crystal silicon solar batteries described in claim 1 to 2 any one, it is characterised in that: step
(1) in, the silica-film thickness of preparation is between 0-50nm；The aluminium sesquioxide film thickness of preparation in step (2)
Between 0.1-50nm；In step (3), the silicon nitride film thickness of preparation is between 50-200nm.
The manufacturing process of a kind of crystal silicon solar batteries the most according to claim 3, it is characterised in that: preparation in step (1)
Silica-film thickness between 0.1-10nm；In step (2) silica-film thickness of preparation 1-10nm it
Between；In step (3), the silicon nitride film thickness of preparation is between 50-100nm.
5. the manufacturing process of a crystal silicon solar batteries, it is characterised in that: use technique for atomic layer deposition or Plasma-Atomic layer
Deposition technique, mainly comprises the steps:
(1) on pending cell piece two sides, prepare oxygen by technique for atomic layer deposition or Plasma-Atomic layer deposition techniques simultaneously
SiClx aluminum laminated film:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One, aluminum source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one；Oxygen source is H2O、
H2O2、O3In one；
Technological parameter: technological temperature is 50-300 degree, technique vacuum range 1-100torr, silicon source, aluminum source and pulse of oxygen source time are respectively
Between 0.01 second-30 seconds, silicon source, using certain cycle pulse mode between aluminum source and oxygen source, each is anti-
The inert gas purge time after answering gas pulses to complete is between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2One in O,
Chemical source is identical with this step Atom layer deposition techniques with choosing of technological parameter；The working range of plasma generator is power
At 100-5000 watt, frequency is 50 KHz-50 megahertzs
(2) two sides of the cell piece processed in step (1), is sunk by technique for atomic layer deposition or Plasma-Atomic layer simultaneously
Long-pending technology prepares silicon nitride film:
Chemical source: silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One, nitrogen source is NH3、N2H2In one；
Technological parameter: technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length are respectively 0.01
Between-30 seconds seconds, the inert gas purge time after each reacting gas pulse completes is between 0.01 second-30 seconds；
During this step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/N2
In one, wherein use H2/N2Time, H2Concentration is H2/N21-50%；Choosing and this step of chemical source and technological parameter
Rapid Atom layer deposition techniques is identical；The working range of plasma generator be power at 100-5000 watt, frequency is at 50 kilo hertzs
Hereby-50 megahertzs
Wherein step (1) and step (2) select to carry out in same cavity or different cavity body according to practical situation.
The manufacturing process of a kind of crystal silicon solar batteries the most according to claim 5, it is characterised in that: silicon source in step (1),
The pulse mode of aluminum source and oxygen source is the one in following pulse mode:
The source pulse of (a) silicon, inert gas purge, pulse of oxygen source, inert gas purge, the pulse of aluminum source, inert gas purge, oxygen source
Pulse, inert gas purge, so circulates, reaches predetermined thin film thickness；
The source pulse of (b) silicon, inert gas purge, the pulse of aluminum source, inert gas purge, pulse of oxygen source, inert gas purge, so
Circulation, reaches predetermined thin film thickness；
C () silicon source and the pulse simultaneously of aluminum source, inert gas purge, pulse of oxygen source, inert gas purge, so circulate, reach predetermined
Film thickness.
7. according to the manufacturing process of a kind of crystal silicon solar batteries described in claim 5 to 6 any one, it is characterised in that: described
Technique prepares the double-sided coating structure of battery: two surfaces of cell piece are followed successively by oxidation sial laminated film, silicon nitride film；
Wherein, oxidation sial laminated film is as passivation layer, and the silicon nitride film in cell piece front is as anti-reflection layer, and the cell piece back side is same
Time formed silicon nitride film as protective layer.
8. according to the manufacturing process of a kind of crystal silicon solar batteries described in any one claim in claim 5 to 7, its feature
It is: in step (1), the oxidation sial laminated film thickness of preparation is between 0.1-50nm；The nitridation of preparation in step (2)
Silicon film thickness is between 50-200nm.
The manufacturing process of a kind of crystal silicon solar batteries the most according to claim 8, it is characterised in that: preparation in step (1)
Oxidation sial laminated film thickness between 1-10nm；In step (2), the silicon nitride film thickness of preparation is at 50-100nm
Between.
10. according to the manufacturing process of a kind of crystal silicon solar batteries described in claim 1 or 5, it is characterised in that: described technique
The battery structure of preparation is the one in having structure:
(1) upper surface at substrate has the launch site corresponding with substrate conducting type, a upper surface making herbs into wool layer, a upper surface
The functional film that anti-reflection layer, a upper surface and back side thickness are identical, its upper surface is as additional anti-reflection layer, and the back side is as blunt
Change layer, a back-protective layer, a upper surface and back side wire；
(2) upper surface at substrate has the launch site corresponding with substrate conducting type, a upper surface making herbs into wool layer, a upper surface
And the functional film that the passivation layer that back side thickness is identical, a upper surface and back side thickness are identical, its upper surface as anti-reflection layer,
The back side as protective layer, a upper surface and back side wire；
(3) two sides at substrate has the launch site corresponding with substrate conducting type, a two-sided making herbs into wool layer, a double thickness phase
Same passivation layer, the anti-reflection layer that a double thickness is identical, a upper surface and back side wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610174023.3A CN105870249B (en) | 2016-03-24 | 2016-03-24 | A kind of manufacturing process of crystal silicon solar batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610174023.3A CN105870249B (en) | 2016-03-24 | 2016-03-24 | A kind of manufacturing process of crystal silicon solar batteries |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105870249A true CN105870249A (en) | 2016-08-17 |
| CN105870249B CN105870249B (en) | 2017-10-03 |
Family
ID=56625316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610174023.3A Active CN105870249B (en) | 2016-03-24 | 2016-03-24 | A kind of manufacturing process of crystal silicon solar batteries |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105870249B (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658358A (en) * | 2017-09-21 | 2018-02-02 | 东方环晟光伏（江苏）有限公司 | Solar battery back passivation film structure and its generation method |
| CN108346716A (en) * | 2018-03-29 | 2018-07-31 | 江苏微导纳米装备科技有限公司 | A kind of manufacturing process of crystal silicon solar batteries |
| CN109087956A (en) * | 2018-07-16 | 2018-12-25 | 横店集团东磁股份有限公司 | A kind of two-sided PERC solar battery structure and its preparation process |
| CN109244184A (en) * | 2018-09-12 | 2019-01-18 | 江苏顺风新能源科技有限公司 | A kind of PERC double-side cell of two-sided aluminium oxide structure and preparation method thereof |
| CN109680262A (en) * | 2019-02-20 | 2019-04-26 | 江苏微导纳米装备科技有限公司 | A kind of method, apparatus and application of atomic layer deposition plated film |
| CN109888060A (en) * | 2019-03-15 | 2019-06-14 | 通威太阳能（合肥）有限公司 | A kind of solar cell and preparation method thereof with three layers of passivation layer structure |
| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN110684964A (en) * | 2019-10-22 | 2020-01-14 | 华中科技大学 | Method for coating nanocrystalline thin film based on plasma atomic layer deposition and product |
| CN111129214A (en) * | 2019-12-13 | 2020-05-08 | 阳光中科（福建）能源股份有限公司 | N-type PERT double-sided solar cell and preparation process thereof |
| CN111816735A (en) * | 2020-07-10 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | Method for manufacturing amorphous silicon by ALD |
| CN112567532A (en) * | 2018-04-06 | 2021-03-26 | 韩华Qcells有限公司 | Bifacial solar cell, solar module, and method for manufacturing bifacial solar cell |
| TWI733229B (en) * | 2019-10-25 | 2021-07-11 | 財團法人金屬工業研究發展中心 | Method of forming a semiconductor structure and semiconductor structure |
| CN113241389A (en) * | 2021-04-25 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Method for manufacturing PERC battery for improving photoelectric conversion efficiency and battery |
| CN113945853A (en) * | 2021-08-04 | 2022-01-18 | 惠州锂威新能源科技有限公司 | Method for detecting stability of battery SEI film |
| CN113964240A (en) * | 2021-10-19 | 2022-01-21 | 通威太阳能(眉山)有限公司 | Preparation method of N-type double-sided solar cell |
| CN114188443A (en) * | 2021-11-18 | 2022-03-15 | 晋能清洁能源科技股份公司 | Preparation method of thin silicon slice HJT battery capable of reducing fragment rate |
| CN114442213A (en) * | 2022-03-10 | 2022-05-06 | 江苏微导纳米科技股份有限公司 | Optical device, naked eye 3D display device and method for improving optical device performance tolerance |
| CN114944433A (en) * | 2022-05-19 | 2022-08-26 | 苏州大学 | Surface passivation material for crystalline silicon solar cell |
| CN115274913A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Preparation method of IBC solar cell with passivation contact structure, cell, module and system |
| CN115404464A (en) * | 2022-09-23 | 2022-11-29 | 江苏微导纳米科技股份有限公司 | Method and apparatus for depositing thin film, and solar cell |
| CN115505901A (en) * | 2022-09-27 | 2022-12-23 | 江苏舜大新能源科技有限公司 | Film coating method and device for heterojunction solar cell |
| CN117497644A (en) * | 2023-12-28 | 2024-02-02 | 浙江季丰电子科技有限公司 | Method for repairing solar cell cutting loss and application |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1480998A (en) * | 2002-07-08 | 2004-03-10 | ���ǵ�����ʽ���� | Method for forming silica layer on substrate by adopting atomic layer deposition technique |
| CN1841676A (en) * | 2005-03-28 | 2006-10-04 | 东京毅力科创株式会社 | Formation of silicon nitride film by using atomic layer deposition method |
| CN102064237A (en) * | 2010-11-29 | 2011-05-18 | 奥特斯维能源（太仓）有限公司 | Double-layer passivating method for crystalline silicon solar battery |
| CN102157570A (en) * | 2011-01-11 | 2011-08-17 | 上海太阳能电池研究与发展中心 | Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof |
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN102751337A (en) * | 2012-07-31 | 2012-10-24 | 英利集团有限公司 | N type crystalline silicon solar battery and manufacturing method thereof |
| CN202601629U (en) * | 2012-05-25 | 2012-12-12 | 中节能太阳能科技有限公司 | Crystalline silicon solar cell |
| CN102881776A (en) * | 2012-10-15 | 2013-01-16 | 浙江正泰太阳能科技有限公司 | Method for preparing back surface passivation crystalline silicon solar cell and solar cell |
| CN103137714A (en) * | 2011-12-01 | 2013-06-05 | 上海纳米技术及应用国家工程研究中心有限公司 | Solar cell three-layer composition passivation reduction layer and preparing method thereof |
| CN103374708A (en) * | 2012-04-12 | 2013-10-30 | 气体产品与化学公司 | High temperature atomic layer deposition of silicon oxide thin films |
| CN103606568A (en) * | 2013-11-21 | 2014-02-26 | 常州天合光能有限公司 | Film passivation structure for crystalline silica solar cell |
| CN104152865A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | Preparation method for silicon nitride thin film |
-
2016
- 2016-03-24 CN CN201610174023.3A patent/CN105870249B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1480998A (en) * | 2002-07-08 | 2004-03-10 | ���ǵ�����ʽ���� | Method for forming silica layer on substrate by adopting atomic layer deposition technique |
| CN1841676A (en) * | 2005-03-28 | 2006-10-04 | 东京毅力科创株式会社 | Formation of silicon nitride film by using atomic layer deposition method |
| CN102064237A (en) * | 2010-11-29 | 2011-05-18 | 奥特斯维能源（太仓）有限公司 | Double-layer passivating method for crystalline silicon solar battery |
| CN102157570A (en) * | 2011-01-11 | 2011-08-17 | 上海太阳能电池研究与发展中心 | Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof |
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN103137714A (en) * | 2011-12-01 | 2013-06-05 | 上海纳米技术及应用国家工程研究中心有限公司 | Solar cell three-layer composition passivation reduction layer and preparing method thereof |
| CN103374708A (en) * | 2012-04-12 | 2013-10-30 | 气体产品与化学公司 | High temperature atomic layer deposition of silicon oxide thin films |
| CN202601629U (en) * | 2012-05-25 | 2012-12-12 | 中节能太阳能科技有限公司 | Crystalline silicon solar cell |
| CN102751337A (en) * | 2012-07-31 | 2012-10-24 | 英利集团有限公司 | N type crystalline silicon solar battery and manufacturing method thereof |
| CN102881776A (en) * | 2012-10-15 | 2013-01-16 | 浙江正泰太阳能科技有限公司 | Method for preparing back surface passivation crystalline silicon solar cell and solar cell |
| CN103606568A (en) * | 2013-11-21 | 2014-02-26 | 常州天合光能有限公司 | Film passivation structure for crystalline silica solar cell |
| CN104152865A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | Preparation method for silicon nitride thin film |
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658358A (en) * | 2017-09-21 | 2018-02-02 | 东方环晟光伏（江苏）有限公司 | Solar battery back passivation film structure and its generation method |
| CN108346716A (en) * | 2018-03-29 | 2018-07-31 | 江苏微导纳米装备科技有限公司 | A kind of manufacturing process of crystal silicon solar batteries |
| CN112567532A (en) * | 2018-04-06 | 2021-03-26 | 韩华Qcells有限公司 | Bifacial solar cell, solar module, and method for manufacturing bifacial solar cell |
| CN109087956B (en) * | 2018-07-16 | 2020-07-17 | 横店集团东磁股份有限公司 | Double-sided PERC solar cell structure and preparation process thereof |
| CN109087956A (en) * | 2018-07-16 | 2018-12-25 | 横店集团东磁股份有限公司 | A kind of two-sided PERC solar battery structure and its preparation process |
| CN109244184A (en) * | 2018-09-12 | 2019-01-18 | 江苏顺风新能源科技有限公司 | A kind of PERC double-side cell of two-sided aluminium oxide structure and preparation method thereof |
| CN109680262A (en) * | 2019-02-20 | 2019-04-26 | 江苏微导纳米装备科技有限公司 | A kind of method, apparatus and application of atomic layer deposition plated film |
| CN109888060A (en) * | 2019-03-15 | 2019-06-14 | 通威太阳能（合肥）有限公司 | A kind of solar cell and preparation method thereof with three layers of passivation layer structure |
| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN110684964B (en) * | 2019-10-22 | 2021-01-19 | 华中科技大学 | Method for coating nanocrystalline thin film based on plasma atomic layer deposition and product |
| CN110684964A (en) * | 2019-10-22 | 2020-01-14 | 华中科技大学 | Method for coating nanocrystalline thin film based on plasma atomic layer deposition and product |
| TWI733229B (en) * | 2019-10-25 | 2021-07-11 | 財團法人金屬工業研究發展中心 | Method of forming a semiconductor structure and semiconductor structure |
| CN111129214A (en) * | 2019-12-13 | 2020-05-08 | 阳光中科（福建）能源股份有限公司 | N-type PERT double-sided solar cell and preparation process thereof |
| CN111816735A (en) * | 2020-07-10 | 2020-10-23 | 普乐新能源科技(徐州)有限公司 | Method for manufacturing amorphous silicon by ALD |
| CN113241389A (en) * | 2021-04-25 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Method for manufacturing PERC battery for improving photoelectric conversion efficiency and battery |
| CN115274913A (en) * | 2021-04-30 | 2022-11-01 | 泰州中来光电科技有限公司 | Preparation method of IBC solar cell with passivation contact structure, cell, module and system |
| CN115274913B (en) * | 2021-04-30 | 2023-11-10 | 泰州中来光电科技有限公司 | Preparation method of IBC solar cell with passivation contact structure, and cell, component and system |
| CN113945853A (en) * | 2021-08-04 | 2022-01-18 | 惠州锂威新能源科技有限公司 | Method for detecting stability of battery SEI film |
| CN113964240A (en) * | 2021-10-19 | 2022-01-21 | 通威太阳能(眉山)有限公司 | Preparation method of N-type double-sided solar cell |
| WO2023065710A1 (en) * | 2021-10-19 | 2023-04-27 | 通威太阳能(眉山)有限公司 | N-type double-sided solar cell preparation method |
| CN114188443A (en) * | 2021-11-18 | 2022-03-15 | 晋能清洁能源科技股份公司 | Preparation method of thin silicon slice HJT battery capable of reducing fragment rate |
| CN114442213A (en) * | 2022-03-10 | 2022-05-06 | 江苏微导纳米科技股份有限公司 | Optical device, naked eye 3D display device and method for improving optical device performance tolerance |
| CN114944433A (en) * | 2022-05-19 | 2022-08-26 | 苏州大学 | Surface passivation material for crystalline silicon solar cell |
| CN115404464A (en) * | 2022-09-23 | 2022-11-29 | 江苏微导纳米科技股份有限公司 | Method and apparatus for depositing thin film, and solar cell |
| CN115505901A (en) * | 2022-09-27 | 2022-12-23 | 江苏舜大新能源科技有限公司 | Film coating method and device for heterojunction solar cell |
| CN117497644A (en) * | 2023-12-28 | 2024-02-02 | 浙江季丰电子科技有限公司 | Method for repairing solar cell cutting loss and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105870249B (en) | 2017-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105870249A (en) | Fabrication process of crystalline silicon solar cell | |
| CN111192935B (en) | Back passivation structure of tubular PERC solar cell and preparation method thereof | |
| CN107256894A (en) | Tubular type PERC one side solar cells and preparation method thereof and special equipment | |
| CN103632934B (en) | The Boron diffusion methods of N type silicon chips, crystal silicon solar energy battery and preparation method thereof | |
| CN109950363A (en) | A kind of passivating back technique of PERC solar battery | |
| CN113611756B (en) | N-type TOPCon battery and preparation method thereof | |
| CN108987531A (en) | One type monocrystalline PERC preparation method of solar battery | |
| CN103050553A (en) | Crystalline silicon solar cell with double-side passivation and preparing method thereof | |
| CN107123702A (en) | The preparation method of polished backside PERC batteries | |
| CN105226114A (en) | A kind of black silicon passivating structure and preparation method thereof | |
| TW201312779A (en) | Method for producing a solar cell and solar cell | |
| CN104521003B (en) | The manufacture method of solaode and the solaode manufactured by this manufacture method | |
| CN105977342A (en) | Polysilicon back passivation cell back surface atomic layer deposition preparation alumina film annealing synthesizing technology | |
| CN111584667A (en) | Novel N-type crystalline silicon TOPCon battery structure and preparation process thereof | |
| CN108470800B (en) | Method for reducing TMA consumption of PECVD (plasma enhanced chemical vapor deposition) machine | |
| CN101707225B (en) | Method for improving characteristics of antireflecting film of monocrystalline silicon solar battery | |
| WO2023216652A1 (en) | Bifacial solar cell and preparation method therefor | |
| Duerinckx et al. | Large‐area epitaxial silicon solar cells based on industrial screen‐printing processes | |
| CN104037264B (en) | A kind of method that PECVD deposits low surface recombination solar cell dielectric layer | |
| CN111584666A (en) | Novel P-type crystalline silicon cell structure and preparation process thereof | |
| CN110391319A (en) | A kind of preparation method of the efficient black silicon cell of anti-PID effect | |
| CN106653895B (en) | Local doped crystalline silicon solar cell and preparation method thereof | |
| CN112447863B (en) | Solar cell and preparation method thereof | |
| CN107731961B (en) | Film plating process, preparation method and the PERC solar battery of PERC solar battery | |
| CN113851557A (en) | PERC battery and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Co-patentee after: WUXI LEAD INTELLIGENT EQUIPMENT Co.,Ltd. Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: For the 214028 District in Jiangsu province Wuxi City Road No. 7 Co-patentee before: WUXI LEAD INTELLIGENT EQUIPMENT Co.,Ltd. Patentee before: JIANGSU LEADMICRO NANO-EQUIPMENT TECHNOLOGY Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201021 Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. Patentee before: WUXI LEAD INTELLIGENT EQUIPMENT Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Patentee after: Jiangsu micro nano technology Co.,Ltd. Country or region after: China Address before: No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |