CN105870249B - A kind of manufacturing process of crystal silicon solar batteries - Google Patents
A kind of manufacturing process of crystal silicon solar batteries Download PDFInfo
- Publication number
- CN105870249B CN105870249B CN201610174023.3A CN201610174023A CN105870249B CN 105870249 B CN105870249 B CN 105870249B CN 201610174023 A CN201610174023 A CN 201610174023A CN 105870249 B CN105870249 B CN 105870249B
- Authority
- CN
- China
- Prior art keywords
- source
- technique
- silicon
- plasma
- layer deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 70
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 135
- 238000002161 passivation Methods 0.000 claims abstract description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000000576 coating method Methods 0.000 claims abstract description 36
- 239000011248 coating agent Substances 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 138
- 239000010408 film Substances 0.000 claims description 89
- 238000000231 atomic layer deposition Methods 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 30
- 239000001301 oxygen Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- 238000010926 purge Methods 0.000 claims description 29
- 239000011261 inert gas Substances 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 210000002268 wool Anatomy 0.000 claims description 24
- 235000008216 herbs Nutrition 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 239000011241 protective layer Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- 229910003910 SiCl4 Inorganic materials 0.000 claims description 8
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 8
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 229910000091 aluminium hydride Inorganic materials 0.000 claims description 4
- 229910007161 Si(CH3)3 Inorganic materials 0.000 claims 4
- 239000012495 reaction gas Substances 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 abstract description 43
- 238000005516 engineering process Methods 0.000 abstract description 38
- 230000008569 process Effects 0.000 abstract description 32
- 239000002131 composite material Substances 0.000 abstract description 30
- 229910052681 coesite Inorganic materials 0.000 abstract description 17
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 17
- 229910052682 stishovite Inorganic materials 0.000 abstract description 17
- 229910052905 tridymite Inorganic materials 0.000 abstract description 17
- 229910021418 black silicon Inorganic materials 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 9
- 230000009466 transformation Effects 0.000 abstract description 9
- 229910052593 corundum Inorganic materials 0.000 abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 28
- 238000010276 construction Methods 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 10
- 208000002925 dental caries Diseases 0.000 description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000006388 chemical passivation reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Field is manufactured the present invention relates to solar cell, and in particular to improving the surface passivation of the crystal silicon battery of photoelectric transformation efficiency and anti-reflection technology.The present invention be directed to the technological process of existing battery technology, with ald and Plasma-Atomic layer deposit manufacture SiO2、Al2O3、SiNxDeng the nano-stack and composite of material, a layer coating film treatment is passivated simultaneously to the tow sides of crystal silicon battery, so as to extend minority carrier life time, the photoelectric transformation efficiency of battery is lifted.SiNx anti-reflection layer plated films are can proceed with after the completion of passivation layer plated film, so as to integrated passivation, anti-reflection technique in same flow, cost is reduced, improves production capacity.Present invention is particularly suitable for combined with black silicon technology, it is to avoid multiple technique.In addition, for double-side cell, it is even more necessary selection to carry out passivation on double surfaces simultaneously using the present invention.
Description
Technical field
Field is manufactured the present invention relates to solar cell, and in particular in the table for the crystal silicon battery for improving photoelectric transformation efficiency
Face is passivated and anti-reflection technology.
Background technology
Efficient crystal silicon battery is an important development trend of photovoltaic industry.To increase the photoelectricity of crystal silicon battery to greatest extent
Conversion efficiency, surface wool manufacturing and passivation technology be all high-efficiency battery manufacture necessary means, such as passivation emitter back side battery,
That is PERC battery technologies receive much concern.And battery production technology is also further being updated and improved.Wherein black silicon technology
More than 20% conversion efficiency has been can reach with reference to back of the body passivating technique.
Common acids method making herbs into wool is different from, the black silicon technology of the RIE etch of Devoting Major Efforts To Developing can carry out deep to crystal silicon surface at this stage
Degree etching, so as to form high-aspect-ratio hole, more effectively reduces reflection loss of the battery surface to light, increase opto-electronic conversion effect
Rate.Another reason for development of black silicon technology is the importing of Buddha's warrior attendant wire cutting silicon ingot technology.Buddha's warrior attendant wire cutting can be significantly
Polysilicon chip cost is reduced, but traditional sour making herbs into wool can not realize effective making herbs into wool, and the black silicon making herbs into wool of RIE very significantly upper can be solved
Certainly diamond wire cutting brings the difficulty on process for etching.But, the black silicon technology with high-aspect-ratio hole is to lower one of base
SiNxAnti-reflection layer process proposes new challenge.Because existing anti-reflection layer uses the SiN based on PECVDxTechnique, it is impossible to right
Completely covered compared with deep holes, therefore after the completion of RIE etch, in addition it is also necessary to increase by one of wet method flatening process to reduce hole
Depth-to-width ratio.The complexity and cost of technique are so added again.
On the other hand, the main path of passivating technique raising battery efficiency has two：One is the reduction surface defect density of states,
I.e. the generally chemical passivation (Chemical passivation) of meaning, main to utilize thermal oxidation method SiO2Carry out saturation dangling bonds drop
Low surface state；Two be reduction surface free electron or hole concentration, i.e., generally signified field-effect passivation (Field effect
Passivation), it is prepared by the Al-BSF passivation of such as conventional p-type battery, plasma reinforced chemical vapour deposition (PECVD) method
Silicon nitride (SiNx), non-crystalline silicon (a-Si), SiO2/SiNxPassivation is stacked, and ALD prepares Al2O3Etc. thin film technique.But it is due to
There are a variety of crystal silicons mixes mode, causes thin film passivation technique to tend to be complicated, even same process (such as SiNx) need pair
Battery surface and the back side are passivated plated film respectively.Cause cost too high.Al is being generated using ALD2O3When one side carries on the back passivation technology
Also require that without around plating, it is to avoid cause the visual impact on crystal silicon battery surface.Factors above proposes very big to filming equipment design
Challenge, production cost can not be reduced.
Ald (Atomic Layer Deposition, ALD) technology be one using surface chemistry gas phase reaction as
The Nanometer thin film deposition technology on basis.As shown in figure, it is right therebetween by the way that two or more chemical sources are introduced separately into reaction chamber
Gas phase reaction product and unreacted gas purging after the saturated reaction of surface is clean, can plate material with monatomic form membrane
In substrate surface, therefore the thickness and the uniformity of the film deposited can be accurately controlled in the range of atomic layer level thickness.Have
Not in traditional evaporating deposition technique, ALD technique has forms high-quality, nothing in on-plane surface labyrinth and three-dimensional structure surface
The special performances such as pin hole, conformality film.Currently, ald (ALD) technology as state-of-the-art film deposition techniques it
One, it is widely used to advanced microelectronics manufacturing industry.Because conventional crystalline silicon battery surface structure is relatively easy, therefore ALD skills
Unique high-quality of art, the special performance such as pin-free, conformality film is not fully utilized.As shown in Figure 2, conventional wet lay
It is so-called that sour making herbs into wool is formed " pyramid " its depth-to-width ratio is smaller, and PECVD anti-reflection layers can be in its matte direct formation of film at surface；But it is right
The matte of the high-aspect-ratio formed in RIE etch, traditional PECVD anti-reflection layers can not cover pile layer bottom, cause defect.Utilize
The matte of labyrinth can be just completely covered in ALD technique.Therefore as black silicon technology gradually realizes volume production, to can solve the problem that
The demand of the ALD technique of high-aspect-ratio surface coating is apparent.Further, since ALD is the reaction of granule surface contral, it is particularly suitable for
Batch is loaded, and plated film is carried out to all substrate surfaces being exposed in reacting gas.
The content of the invention
1st, the technical problems to be solved by the invention
It is former with ald (ALD) and plasma the present invention be directed to the technological process of existing battery technology
Sublayer deposition (PEALD) manufacture SiO2、Al2O3、SiNxDeng the nano-stack and composite of material, to the positive and negative of crystal silicon battery
Two sides is passivated a layer coating film treatment simultaneously, so as to extend minority carrier life time, lifts the photoelectric transformation efficiency of battery.Passivation layer plated film
After the completion of can proceed with SiNxAnti-reflection layer plated film, so as to integrated passivation, anti-reflection technique in same flow, reduces cost, carries
High production capacity.Present invention is particularly suitable for combined with black silicon technology, it is to avoid multiple technique.In addition, for double-side cell, using this
It is even more necessary selection that invention carries out passivation on double surfaces simultaneously.
2nd, the technical scheme that the present invention is provided
Based on ald (ALD) and Plasma-Atomic layer deposition (PEALD) both process technologies in cell piece
Surface prepares functional film SiO2/Al2O3/SiNxAnd SixAlyOz/SiNx, it can be used in producing in enormous quantities, it is brilliant to variety classes
Silion cell is passivated and anti-reflection plated film.Same material plated film is carried out simultaneously in crystal silicon battery tow sides, and multiple material can
Once completed in same reaction cavity.
Prepare SiO2/Al2O3/SiNxThe specific technical scheme of composite construction is as follows：
A kind of manufacturing process of crystal silicon solar batteries, is deposited using technique for atomic layer deposition or Plasma-Atomic layer
Technology, mainly comprises the following steps：
(1) on pending cell piece two sides, while being deposited by technique for atomic layer deposition or Plasma-Atomic layer
Technology prepares silica membrane：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si
(CH3)3One kind in Cl, oxygen source is H2O、H2O2、O3In one kind；
Technological parameter：Technological temperature is 20-300 DEG C, technique vacuum range 1-100torr, silicon source and pulse of oxygen source time
Respectively 0.01
Between seconds -30 seconds, inert gas purge time after the completion of each reacting gas pulse for -30 seconds 0.01 second it
Between；
During the step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2In O
The selection of one kind, chemical source and technological parameter is identical with technique for atomic layer deposition in the step；The work model of plasma generator
It is power at 100-5000 watts to enclose, and frequency is in -50 megahertzs of 50 KHz；
(2) two sides of the cell piece processed in step (1), while former by technique for atomic layer deposition or plasma
Sublayer deposition technique prepares alundum (Al2O3) film：
Chemical source：Silicon source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one kind；Oxygen source is H2O、H2O2、O3In
One kind；
Technological parameter：Technological temperature is 50-300 DEG C, technique vacuum range 1-100torr, silicon source and pulse of oxygen source time
Respectively between -30 seconds 0.01 second, the inert gas purge time after the completion of each reacting gas pulse is -30 seconds 0.01 second
Between；
During the step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2In O
The selection of one kind, chemical source and technological parameter is identical with technique for atomic layer deposition in the step；The work model of plasma generator
It is power at 100-5000 watts to enclose, and frequency is in -50 megahertzs of 50 KHz
(3) two sides of the cell piece processed in step (2), while former by technique for atomic layer deposition or plasma
Sublayer deposition technique prepares silicon nitride film：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si
(CH3)3One kind in Cl, nitrogen source is NH3、N2H2In one kind；
Technological parameter：Technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length
Respectively between -30 seconds 0.01 second, the inert gas purge time after the completion of each reacting gas pulse is -30 seconds 0.01 second
Between；
During the step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/
N2In one kind, wherein using H2/N2When, H2Concentration is H2/N21-50%；The selection of chemical source and technological parameter and the step
Middle technique for atomic layer deposition is identical；The working range of plasma generator be power at 100-5000 watts, frequency is at 50 kilo hertzs
Hereby -50 megahertzs；
Wherein step (1) and step (2) are carried out in same cavity, and step (3) is according to actual conditions selection and step (1)
Carried out with step (2) in same cavity or different cavity body.
Use the structure of cell piece that above-mentioned technique is processed and the concrete function of each functional film for：Cell piece
Two surfaces are followed successively by silica membrane, alundum (Al2O3) film, silicon nitride film；Wherein, silica membrane is used as mistake
Layer is crossed, alundum (Al2O3) film is as passivation layer, and the positive silicon nitride film of cell piece is used as anti-reflection layer, the nitrogen at the cell piece back side
SiClx film is used as protective layer.
Use the thickness range for each functional film that above-mentioned technique processes for：The silica prepared in step (1)
Film thickness is between 0.1-50nm；The alundum (Al2O3) film thickness prepared in step (2) is between 0.1-50nm；Step
(3) the silicon nitride film thickness prepared in is between 50-200nm.Wherein, the preferred thickness range of each functional film is：Step
Suddenly the silica-film thickness prepared in (1) is between 0.1-10nm；The silica-film thickness prepared in step (2) exists
Between 1-10nm；The silicon nitride film thickness prepared in step (3) is between 50-100nm.
Prepare SixAlyOz/SiNxThe specific technical scheme of composite construction is as follows：
A kind of manufacturing process of crystal silicon solar batteries, is deposited using technique for atomic layer deposition or Plasma-Atomic layer
Technology, mainly comprises the following steps：
(1) on pending cell piece two sides, while being deposited by technique for atomic layer deposition or Plasma-Atomic layer
Technology prepares oxidation sial laminated film：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si
(CH3)3One kind in Cl, silicon source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one kind；Oxygen source is H2O、H2O2、O3
In one kind；
Technological parameter：Technological temperature is 50-300 degree, technique vacuum range 1-100torr, silicon source, silicon source and pulse of oxygen source
Time used certain cycle pulse mode, each is anti-between -30 seconds 0.01 second respectively between silicon source, silicon source and oxygen source
It is between -30 seconds 0.01 second to answer the inert gas purge time after the completion of gas pulses；
During the step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2In O
The selection of one kind, chemical source and technological parameter is identical with technique for atomic layer deposition in the step；The work model of plasma generator
It is power at 100-5000 watts to enclose, and frequency is in -50 megahertzs of 50 KHz
(2) two sides of the cell piece processed in step (1), while former by technique for atomic layer deposition or plasma
Sublayer deposition technique prepares silicon nitride film：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si
(CH3)3One kind in Cl, nitrogen source is NH3、N2H2In one kind；
Technological parameter：Technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length
Respectively between -30 seconds 0.01 second, the inert gas purge time after the completion of each reacting gas pulse is -30 seconds 0.01 second
Between；
During the step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/
N2In one kind, wherein using H2/N2When, H2Concentration is H2/N21-50%；The selection of chemical source and technological parameter and the step
Middle technique for atomic layer deposition is identical；The working range of plasma generator be power at 100-5000 watts, frequency is at 50 kilo hertzs
Hereby -50 megahertzs
Wherein step (1) and step (2) select to carry out in same cavity or different cavity body according to actual conditions.
Wherein, the pulse mode of silicon source, silicon source and oxygen source is one kind in following pulse mode in step (1)：
(a) silicon source pulse, inert gas purge, pulse of oxygen source, inert gas purge, silicon source pulse, inert gas purge,
Pulse of oxygen source, so inert gas purge, circulation, reaches predetermined thin film thickness；
(b) silicon source pulse, inert gas purge, silicon source pulse, inert gas purge, pulse of oxygen source, inert gas purge,
So circulation, reaches predetermined thin film thickness；
(c) silicon source and silicon source pulse simultaneously, inert gas purge, pulse of oxygen source, so inert gas purge, circulation, reach
To predetermined thin film thickness.
Use the structure of cell piece that above-mentioned technique is processed and the concrete function of each functional film for：Cell piece
Two surfaces are followed successively by oxidation sial laminated film, silicon nitride film；Wherein, oxidation sial laminated film is used as passivation layer, electricity
Piece positive silicon nitride film in pond is used as protective layer as anti-reflection layer, the silicon nitride film at the cell piece back side.
Use the thickness range for each functional film that above-mentioned technique processes for：The oxidation sial prepared in step (1)
Laminated film thickness is in 0.1-50nm；The silicon nitride film thickness prepared in step (2) is between 50-200nm.Wherein, each work(
Can the preferred thickness range of property film be：The oxidation sial laminated film thickness prepared in step (1) is between 1-10nm；Step
(2) the silicon nitride film thickness prepared in is between 50-100nm.
The battery chip architecture prepared using above-mentioned technique, with one kind in having structure：
(1) there is the launch site corresponding with substrate conducting type, a upper surface making herbs into wool layer, one in the upper surface of substrate
Individual upper surface anti-reflection layer, a upper surface and back side thickness identical functional film, its upper surface are used as additional anti-reflection layer, the back of the body
Face is used as passivation layer, a back-protective layer, a upper surface and back side wire.
(2) there is the launch site corresponding with substrate conducting type, a upper surface making herbs into wool layer, one in the upper surface of substrate
Individual upper surface and the back side thickness identical passivation layer, a upper surface and back side thickness identical functional film, its upper surface
As anti-reflection layer, the back side is used as protective layer, a upper surface and back side wire.
(3) there is the launch site corresponding with substrate conducting type, a two-sided making herbs into wool layer, one pair on the two sides of substrate
Face thickness identical passivation layer, a double thickness identical anti-reflection layer, a upper surface and back side wire.
3rd, the technical scheme provided using the present invention, compared with existing known technology, with following remarkable result：
(1) same material plated film is carried out simultaneously in crystal silicon battery tow sides, it is to avoid multiple coating single side technique, letter
Battery manufacture program is changed, has improved production capacity, while reducing cost.The present invention utilize technique for atomic layer deposition principle, be according to
The thin film deposition reacted and completed by saturation type chemical surface, selectivity non-directional to reactant gas flow.Therefore electricity is only needed
Pond piece is in reacting gas atmosphere, just can self-assembling formation double-sided coating.The passivation of existing cell piece and anti-reflection technique are continued to use
PECVD film plating process, because PECVD is a kind of directive film deposition techniques of tool, therefore can be only done in face of reaction
The coating single side of gas flow path, and the flow velocity and concentration distribution of reacting gas and reaction time are to film thickness, uniform
Degree and quality of forming film have a direct impact.Therefore can not complete cell piece two sides can uniform coated technological requirement.If needed
Two-sided processing is wanted, then mechanical upset must be carried out to cell piece, then be reapposed over second of same process of progress in reaction chamber
Plated film.It is clear that this method not only complex process, and add cost, reduces production capacity, is not suitable for cell piece
Production in enormous quantities.
(2) passivation layer and anti-reflection layer generated using technique for atomic layer deposition, (is approached with excellent shape-retaining ability
100% stepcoverage performance), the deep hole that can be caused in RIE forms high-quality pin-free uniform film, and no longer needs
Wet method flatening process；As shown in Fig. 2 because PECVD silicon nitride has directionality, it is impossible to formed and covered completely in pile layer bottom
The film of lid, or formed film quality it is poor, have pin hole；Therefore defect is formed in pile layer bottom, these defects can cause electricity
The reduction of pond conversion efficiency, therefore prior art must carry out wet method reparation again to the deep hole of RIE formation, could use PECVD
Passivation layer and anti-reflection layer, on the other hand, can but increase the reflectivity of black silicon.And the present invention utilizes the guarantor of technique for atomic layer deposition
Type characteristic, directly can be passivated and anti-reflection plated film to RIE making herbs into wool layer, and it is scarce to repair the deep layer of pile layer bottom naturally
Fall into, keep the reflectivity of the black silicon technologies of RIE.
(3) can freely be arranged in pairs or groups between passivation technology and anti-reflection technique, select according to actual needs in same reaction chamber or
Carried out in the different reaction chamber of person.Differential responses intracavitary be passivated respectively with anti-reflection technique, existing list can be made full use of
Face plated film PECVD reaction chambers carry out anti-reflection layer and protective layer plated film, and are carried out using the ald reaction chamber of double-sided coating
Passivation layer plated film.Existing equipment is made full use of, cost is reduced.Be passivated in same reaction chamber with anti-reflection technique, then subtract
Few equipment amount, reduces cost.
(4) n-type, p-type battery can use this technique, with good versatility.Multiple battery, which can reach, further to be carried
Rise the effect of battery performance.Compared with existing common PE RC batteries, the double-sided coating film passivated generated using technique for atomic layer deposition
Layer can lift battery conversion efficiency close to 1%.Battery chip architecture proposed by the present invention, the ALD additional passivation films of upper surface may be used also
To repair the microdefect of PECVD antireflective films, so as to improve cell piece service life.
The common monocrystalline silicon battery photoelectric transformation efficiency of table 1 and the PERC battery testings with different structure ALD double-sided coatings
Results contrast
Brief description of the drawings
Fig. 1 ALD principle schematics
Fig. 2 ALD and PECVD is to the conformal performance comparision of making herbs into wool layer
Two-sided plating passivation layer (double layer material) structure chart after Fig. 3 A common batteries anti-reflection layer process, wherein：100 crystalline silicon substrates
(monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layer, 120 passivation layers, 121 first passivation
Layer, 122 second passivation layers, 131 front anti-reflection layers, 132 back-protectives layer.
Two-sided plating ALD/PEALD passivation layers (double layer material)/anti-reflection tunic knot after Fig. 3 B common batteries flocking cleanings
Composition, wherein：100 crystalline silicon substrates (monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layer,
120 passivation layers, 121 first passivation layers, 122 second passivation layers, 130 (131) front anti-reflection layers, 130 (132) back-protectives layer.
Fig. 3 C double-side cell double-sided coating ALD/PEALD passivation layers (double layer material)/anti-reflection film structure figure, wherein：100
Crystalline silicon substrate (monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layer, 120 passivation layers, 121
First passivation layer, 122 second passivation layers, 130 front anti-reflection layers and back side anti-reflection layer.
Two-sided plating passivation layer (composite) structure chart after Fig. 3 D common batteries anti-reflection layer process, wherein：100 crystalline silicon substrates
(monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layer, 131 front anti-reflection layers, 132 back sides
Protective layer, 140 composite passivation layers.
Two-sided plating ALD/PEALD passivation layers (composite)/anti-reflection tunic knot after Fig. 3 E common batteries flocking cleanings
Composition, wherein：100 crystalline silicon substrates (monocrystalline, polycrystalline, n, p-type), 110 diffusion layers and making herbs into wool layer, 111 diffusion layers, 112 making herbs into wool layer,
130 front anti-reflection layers and back-protective layer, 140 composite passivation layers.
The process flow diagram that the correspondence technological process of Fig. 4 A Fig. 3 A structures is realized in different cavitys.
The process flow diagram that the correspondence technological process of Fig. 4 B-1 Fig. 3 B structures is realized in same cavity.
The process flow diagram that the correspondence technological process of Fig. 4 B-2 Fig. 3 B structures is realized in different cavitys.
The process flow diagram that the correspondence technological process of Fig. 4 C Fig. 3 C-structure is realized in same or different cavitys.
The process flow diagram that the correspondence technological process of Fig. 4 D Fig. 3 D structures is realized in different cavitys.
The process flow diagram that the correspondence technological process of Fig. 4 E Fig. 3 E structures is realized in same cavity or different cavitys.
Embodiment
With reference to Figure of description and specific embodiment, the present invention is described in detail.
Embodiment 1 prepares common PE RC batteries anti-reflection layer and ALD passivation layer process
Using the method comprises the steps of firstly, preparing common PE RC battery structures and anti-reflection layer, then carry out ALD technique double-sided coating film passivated
The technique of layer, using different reaction cavity and technological parameter, can prepare SiNx/SiO2/Al2O3/SiNxComposite construction, tool
The implementation of the technological parameter of body and the composite construction prepared are as follows：
Table 2 prepares SiNx/SiO2/Al2O3/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 A), concrete technology is shown in
Fig. 4 A
Note：Wherein step 121 and step 122 carry out double-sided coating, step 131 and step 132 simultaneously in same cavity
Selected to carry out PEALD or PECVD coating single sides in different cavity body according to actual conditions.
Wherein, preferred embodiment is：
Table 3 prepares SiNx/Al2O3/SiNxThe parameter of the preferred embodiment of composite construction (Fig. 3 A), concrete technology is shown in Fig. 4 A
Note：Wherein step 120 carries out double-sided coating simultaneously in ald chamber body, and step 131 and step 132 are in same PECVD chambers
Coating single side is carried out in vivo.
Photovoltaic cell according to manufactured by the technique of table 2, it measures resulting conversion efficiency result such as table 4 below.It can be seen that making
The Al2O3 passivation layers manufactured with ALD technique progress double-sided coating are compared with common batteries, and photoelectric transformation efficiency improves 1%.
The common monocrystalline silicon battery photoelectric transformation efficiency of table 4 is with passing through ALD double-sided coatings Al2O3PERC batteries (the figure of passivation layer
Result of the test 3A) compares
The technique that embodiment 2 prepares common PE RC battery ALD passivation layers and PEALD anti-reflection layers/protective layer
Using the method comprises the steps of firstly, preparing the ALD passivation layer double-sided coatings of PERC battery structures, then carry out PEALD or
The technique of PECVD anti-reflection layers and passivation layer, using same ALD/PEALD reaction cavities and technological parameter, can prepare SiNx/
SiO2/Al2O3/SiNxComposite construction, the implementation of specific technological parameter and the composite construction prepared are as follows：
Table 5 prepares SiNx/SiO2/Al2O3/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 B) is (using same
ALD/PEALD reaction cavities, concrete technology flow process is shown in Fig. 4 B-1)
Note：Wherein step 121 and step 122 carry out double-sided coating simultaneously in same cavity, and step 130 is according to actual feelings
Condition is adjusted cavity temperature in same cavity and carries out PEALD double-sided coatings.
The technique that embodiment 3 prepares common PE RC battery ALD passivation layers and PEALD/PECVD anti-reflection layers/protective layer
Using the method comprises the steps of firstly, preparing the ALD passivation layer double-sided coatings of PERC battery structures, then carry out PEALD or
The technique of PECVD anti-reflection layers and passivation layer, using different ALD/PEALD/PECVD reaction cavities and technological parameter, can be prepared
Go out SiNx/SiO2/Al2O3/SiNxComposite construction, the implementation of specific technological parameter and the composite construction prepared are as follows：
Table 6 prepares SiNx/SiO2/Al2O3/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 B) is (using different
ALD/PEALD/PECVD reaction cavities, concrete technology flow process is shown in Fig. 4 B-2)
Note：Wherein step 120 carries out double-sided coating simultaneously in ald chamber body, and step 130 is same in different PEALD cavitys
Shi Jinhang double-sided coatings, or coating single side is carried out in PECVD cavitys respectively.
Wherein, preferred embodiment is：
Table 7 prepares SiNx/SiO2/Al2O3/SiNxThe parameter of the preferred embodiment of composite construction (Fig. 3 B) is (using different
ALD/PEALD/PECVD reaction cavities, concrete technology flow process is shown in Fig. 4 B-2)
Photovoltaic cell according to manufactured by the technique of table 6, it measures resulting conversion efficiency result such as following table.It can be seen that using
ALD and technology carry out the SiN of double-sided coating manufacturex/SiO2/Al2O3/SiNxThe passivation layer of composite construction is compared with common batteries,
Photoelectric transformation efficiency improves nearly 1%.
The common monocrystalline silicon battery photoelectric transformation efficiency of table 8 is with carrying ALD double-sided coatings SiO2/Al2O3The PERC electricity of passivation layer
The result of the test in pond compares
The technique that embodiment 4 prepares ALD/PEALD passivation layers and anti-reflection layer
The ALD passivation layers of double-side cell structure and the technique of PEALD anti-reflection layers are prepared using the present invention, using same or
Different ALD/PEALD reaction cavities and technological parameter, can prepare SiNx/SiO2/Al2O3/SiNxComposite construction, specifically
The implementation of technological parameter and the composite construction prepared are as follows：
Table 9 prepares SiNx/SiO2/Al2O3/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 C), concrete technology is shown in
Fig. 4 C
Note：Wherein step 120 carries out double-sided coating simultaneously in ald chamber body, and step 130 is in same or different PEALD chambers
Body is adjusted cavity temperature while carrying out double-sided coating.
Embodiment 5 prepares common PE RC batteries anti-reflection layer and ALD passivation layer process
The anti-reflection layer and the technique of passivation layer of the common PE RC battery structures prepared using the present invention, using different reactions
Cavity and technological parameter, can prepare SiNx/SixAlyOz/SiNxComposite construction, the implementation and preparation of specific technological parameter
The composite construction gone out is as follows：
Table 10 prepares SiNx/SixAlyOz/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 D), concrete technology is shown in figure
4D
Note：Wherein step 140 carries out double-sided coating simultaneously in ald chamber body, and step 131 and step 132 are according to actual feelings
PEALD or PECVD coating single sides are carried out in condition selection different cavity body.
Wherein, preferred embodiment is：
Table 11 prepares SiNx/SixAlyOz/SiNxThe parameter of the preferred embodiment of composite construction (Fig. 3 D), concrete technology is shown in figure
4D
Note：Wherein step 140 carries out double-sided coating simultaneously in ald chamber body, and step 131 and step 132 are in different PECVD
Coating single side is carried out in cavity.
The technique that embodiment 6 prepares common PE RC battery ALD passivation layers and PEALD/PECVD anti-reflection layers and protective layer
ALD passivation layers and PEALD/PECVD anti-reflection layers and protection using the preparation common PE RC battery structures of the present invention
The technique of layer, using same ALD/PEALD reaction cavities or difference ALD/PECVD reaction cavities and technological parameter, can make
It is standby go out SiNx/SixAlyOz/SiNxComposite construction, the implementation of specific technological parameter and the composite construction prepared are as follows：
Table 12 prepares SiNx/SixAlyOz/SiNxThe parameter of the specific embodiment of composite construction (Fig. 3 E), concrete technology is shown in figure
4E
Note：Wherein step 140 carries out double-sided coating simultaneously in ald chamber body, and step 130 is according to actual conditions in same chamber
Body is adjusted cavity temperature progress PEALD double-sided coatings in different cavitys.
The creation and embodiments thereof schematically to the present invention are described above, and protection scope of the present invention includes
But it is not limited to the description above.Shown in accompanying drawing is also one of embodiment of the invention, and actual structure is not
It is confined to this.So, if one of ordinary skill in the art is enlightened by the present invention, do not departing from the creation ancestor of the present invention
In the case of purport, the frame mode similar to technical scheme and embodiment are designed without creative, all should be belonged to
In the protection domain of this patent.
Claims (10)
1. a kind of manufacturing process of crystal silicon solar batteries, it is characterised in that：Using technique for atomic layer deposition or plasma
Technique for atomic layer deposition, mainly comprises the following steps：
(1) on pending cell piece two sides, while passing through technique for atomic layer deposition or Plasma-Atomic layer deposition techniques
Prepare silica membrane：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One kind, oxygen source is H2O、H2O2、O3In one kind；
Technological parameter：Technological temperature is 20-300 DEG C, technique vacuum range 1-100torr, silicon source and pulse of oxygen source time difference
Between -30 seconds 0.01 second, inert gas purge time after the completion of each reacting gas pulse for -30 seconds 0.01 second it
Between；
During the step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2One kind in O,
The selection of chemical source and technological parameter is identical with technique for atomic layer deposition in the step；The working range of plasma generator is work(
Rate is at 100-5000 watts, and frequency is in -50 megahertzs of 50 KHz；
(2) two sides of the cell piece processed in step (1), while passing through technique for atomic layer deposition or Plasma-Atomic layer
Deposition technique prepares alundum (Al2O3) film：
Chemical source：Silicon source is Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one kind；Oxygen source is H2O、H2O2、O3In one
Kind；
Technological parameter：Technological temperature is 50-300 DEG C, technique vacuum range 1-100torr, silicon source and pulse of oxygen source time difference
Between -30 seconds 0.01 second, inert gas purge time after the completion of each reacting gas pulse for -30 seconds 0.01 second it
Between；
During the step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2One kind in O,
The selection of chemical source and technological parameter is identical with technique for atomic layer deposition in the step；The working range of plasma generator is work(
Rate is at 100-5000 watts, and frequency is in -50 megahertzs of 50 KHz
(3) two sides of the cell piece processed in step (2), while passing through technique for atomic layer deposition or Plasma-Atomic layer
Deposition technique prepares silicon nitride film：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One kind, nitrogen source is NH3、N2H2In one kind；
Technological parameter：Technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length difference
Between -30 seconds 0.01 second, inert gas purge time after the completion of each reacting gas pulse for -30 seconds 0.01 second it
Between；
During the step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/N2In
One kind, wherein using H2/N2When, H2Concentration is H2/N21-50%；The selection of chemical source and technological parameter and atom in the step
Layer deposition techniques are identical；The working range of plasma generator be power at 100-5000 watts, frequency is in 50 KHzs -50 million
Hertz；
Wherein step (1) and step (2) are carried out in same cavity, and step (3) is according to actual conditions selection and step (1) and step
Suddenly (2) are carried out in same cavity or different cavity body.
2. a kind of manufacturing process of crystal silicon solar batteries according to claim 1, it is characterised in that：It is prepared by the technique
The double-sided coating structure of battery is：Two surfaces of cell piece are followed successively by silica membrane, alundum (Al2O3) film, silicon nitride
Film；Wherein, silica membrane is as the first passivation layer, and alundum (Al2O3) film is used as the second passivation layer, cell piece front
Silicon nitride film as anti-reflection layer, the silicon nitride film that the cell piece back side is formed simultaneously is used as protective layer.
3. a kind of manufacturing process of crystal silicon solar batteries according to claim 1 to 2 any one, it is characterised in that：
The silica-film thickness prepared in step (1) is between 0-50nm；The alundum (Al2O3) film thickness prepared in step (2)
Between 0.1-50nm；The silicon nitride film thickness prepared in step (3) is between 50-200nm.
4. a kind of manufacturing process of crystal silicon solar batteries according to claim 3, it is characterised in that：Made in step (1)
Standby silica-film thickness is between 0.1-10nm；The silica-film thickness prepared in step (2) 1-10nm it
Between；The silicon nitride film thickness prepared in step (3) is between 50-100nm.
5. a kind of manufacturing process of crystal silicon solar batteries, it is characterised in that：Using technique for atomic layer deposition or plasma
Technique for atomic layer deposition, mainly comprises the following steps：
(1) on pending cell piece two sides, while passing through technique for atomic layer deposition or Plasma-Atomic layer deposition techniques
Prepare oxidation sial laminated film：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One kind, silicon source be Al (CH3)4、AlCl3、Al(CH2CH3)3、AlH3In one kind；Oxygen source is H2O、H2O2、O3In one kind；
Technological parameter：Technological temperature is 50-300 degree, technique vacuum range 1-100torr, silicon source, silicon source and pulse of oxygen source time
Respectively between -30 seconds 0.01 second, certain cycle pulse mode, each reaction gas are used between silicon source, silicon source and oxygen source
The inert gas purge time after the completion of body pulse is between -30 seconds 0.01 second；
During the step using plasma technique for atomic layer deposition, the oxygen source plasma gas used is O2、N2One kind in O,
The selection of chemical source and technological parameter is identical with technique for atomic layer deposition in the step；The working range of plasma generator is work(
Rate is at 100-5000 watts, and frequency is in -50 megahertzs of 50 KHz
(2) two sides of the cell piece processed in step (1), while passing through technique for atomic layer deposition or Plasma-Atomic layer
Deposition technique prepares silicon nitride film：
Chemical source：Silicon source is Si2(NHC2H5)6、(C8H22N2Si)、SiCl4、Si(CH3)Cl3、Si(CH3)2Cl2、Si(CH3)3In Cl
One kind, nitrogen source is NH3、N2H2In one kind；
Technological parameter：Technological temperature is 50-500 DEG C, technique vacuum range 1-100torr, silicon source and nitrogen source burst length difference
Between -30 seconds 0.01 second, inert gas purge time after the completion of each reacting gas pulse for -30 seconds 0.01 second it
Between；
During the step using plasma technique for atomic layer deposition, the nitrogen source plasma gas used is NH3、N2、H2/N2In
One kind, wherein using H2/N2When, H2Concentration is H2/N21-50%；The selection of chemical source and technological parameter and atom in the step
Layer deposition techniques are identical；The working range of plasma generator be power at 100-5000 watts, frequency is in 50 KHzs -50 million
Hertz
Wherein step (1) and step (2) select to carry out in same cavity or different cavity body according to actual conditions.
6. a kind of manufacturing process of crystal silicon solar batteries according to claim 5, it is characterised in that：Silicon in step (1)
The pulse mode in source, silicon source and oxygen source is one kind in following pulse mode：
(a) silicon source pulse, inert gas purge, pulse of oxygen source, inert gas purge, silicon source pulse, inert gas purge, oxygen source
Pulse, so inert gas purge, circulation, reaches predetermined thin film thickness；
(b) silicon source pulse, inert gas purge, silicon source pulse, inert gas purge, pulse of oxygen source, inert gas purge, so
Circulation, reaches predetermined thin film thickness；
(c) silicon source and silicon source pulse simultaneously, inert gas purge, pulse of oxygen source, so inert gas purge, circulation, reach pre-
Determine film thickness.
7. a kind of manufacturing process of crystal silicon solar batteries according to claim 5 to 6 any one, it is characterised in that：
The double-sided coating structure that the technique prepares battery is：Two surfaces of cell piece are followed successively by oxidation sial laminated film, nitridation
Silicon thin film；Wherein, oxidation sial laminated film is as passivation layer, and the positive silicon nitride film of cell piece is used as anti-reflection layer, battery
The silicon nitride film that the piece back side is formed simultaneously is used as protective layer.
8. a kind of manufacturing process of crystal silicon solar batteries according to claim 7, it is characterised in that：Made in step (1)
Standby oxidation sial laminated film thickness is between 0.1-50nm；The silicon nitride film thickness prepared in step (2) is in 50-
Between 200nm.
9. a kind of manufacturing process of crystal silicon solar batteries according to claim 8, it is characterised in that：Made in step (1)
Standby oxidation sial laminated film thickness is between 1-10nm；The silicon nitride film thickness prepared in step (2) is in 50-100nm
Between.
10. a kind of manufacturing process of crystal silicon solar batteries according to claim 1 or 5, it is characterised in that：The work
Battery structure prepared by skill is one kind in having structure：
(1) there is the launch site corresponding with substrate conducting type in the upper surface of substrate, a upper surface making herbs into wool layer, on one
Make as additional anti-reflection layer, the back side surface anti-reflection layer, a upper surface and back side thickness identical functional film, its upper surface
For passivation layer, a back-protective layer, a upper surface and back side wire；
(2) there is the launch site corresponding with substrate conducting type in the upper surface of substrate, a upper surface making herbs into wool layer, on one
Surface and back side thickness identical passivation layer, a upper surface and back side thickness identical functional film, its upper surface conduct
Anti-reflection layer, the back side is used as protective layer, a upper surface and back side wire；
(3) there is the launch site corresponding with substrate conducting type, a two-sided making herbs into wool layer, a two-sided thickness on the two sides of substrate
Spend identical passivation layer, a double thickness identical anti-reflection layer, a upper surface and back side wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610174023.3A CN105870249B (en) | 2016-03-24 | 2016-03-24 | A kind of manufacturing process of crystal silicon solar batteries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610174023.3A CN105870249B (en) | 2016-03-24 | 2016-03-24 | A kind of manufacturing process of crystal silicon solar batteries |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105870249A CN105870249A (en) | 2016-08-17 |
| CN105870249B true CN105870249B (en) | 2017-10-03 |
Family
ID=56625316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610174023.3A Active CN105870249B (en) | 2016-03-24 | 2016-03-24 | A kind of manufacturing process of crystal silicon solar batteries |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105870249B (en) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658358A (en) * | 2017-09-21 | 2018-02-02 | 东方环晟光伏（江苏）有限公司 | Solar battery back passivation film structure and its generation method |
| CN108346716A (en) * | 2018-03-29 | 2018-07-31 | 江苏微导纳米装备科技有限公司 | A kind of manufacturing process of crystal silicon solar batteries |
| DE102018108158B4 (en) * | 2018-04-06 | 2023-06-07 | Hanwha Q Cells Gmbh | Bifacial solar cell, solar module and manufacturing method for a bifacial solar cell |
| CN109087956B (en) * | 2018-07-16 | 2020-07-17 | 横店集团东磁股份有限公司 | Double-sided PERC solar cell structure and preparation process thereof |
| CN109244184B (en) * | 2018-09-12 | 2020-10-16 | 江苏顺风新能源科技有限公司 | PERC double-sided battery with double-sided aluminum oxide structure and preparation method thereof |
| CN109680262A (en) * | 2019-02-20 | 2019-04-26 | 江苏微导纳米装备科技有限公司 | A kind of method, apparatus and application of atomic layer deposition plated film |
| CN109888060A (en) * | 2019-03-15 | 2019-06-14 | 通威太阳能（合肥）有限公司 | A kind of solar cell and preparation method thereof with three layers of passivation layer structure |
| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN110684964B (en) * | 2019-10-22 | 2021-01-19 | 华中科技大学 | Method for coating nanocrystalline thin film based on plasma atomic layer deposition and product |
| TWI733229B (en) * | 2019-10-25 | 2021-07-11 | 財團法人金屬工業研究發展中心 | Method of forming a semiconductor structure and semiconductor structure |
| CN111129214A (en) * | 2019-12-13 | 2020-05-08 | 阳光中科（福建）能源股份有限公司 | N-type PERT double-sided solar cell and preparation process thereof |
| CN111816735B (en) * | 2020-07-10 | 2023-05-09 | 普乐新能源科技(泰兴)有限公司 | Method for manufacturing amorphous silicon by ALD |
| CN113241389A (en) * | 2021-04-25 | 2021-08-10 | 天津爱旭太阳能科技有限公司 | Method for manufacturing PERC battery for improving photoelectric conversion efficiency and battery |
| CN115274913B (en) * | 2021-04-30 | 2023-11-10 | 泰州中来光电科技有限公司 | Preparation method of IBC solar cell with passivation contact structure, and cell, component and system |
| CN113945853A (en) * | 2021-08-04 | 2022-01-18 | 惠州锂威新能源科技有限公司 | Method for detecting stability of battery SEI film |
| CN113964240A (en) * | 2021-10-19 | 2022-01-21 | 通威太阳能(眉山)有限公司 | Preparation method of N-type double-sided solar cell |
| CN114188443A (en) * | 2021-11-18 | 2022-03-15 | 晋能清洁能源科技股份公司 | Preparation method of thin silicon slice HJT battery capable of reducing fragment rate |
| CN114442213A (en) * | 2022-03-10 | 2022-05-06 | 江苏微导纳米科技股份有限公司 | Optical device, naked eye 3D display device and method for improving optical device performance tolerance |
| CN114944433A (en) * | 2022-05-19 | 2022-08-26 | 苏州大学 | Surface passivation material for crystalline silicon solar cell |
| CN115404464A (en) * | 2022-09-23 | 2022-11-29 | 江苏微导纳米科技股份有限公司 | Method and apparatus for depositing thin film, and solar cell |
| CN115505901A (en) * | 2022-09-27 | 2022-12-23 | 江苏舜大新能源科技有限公司 | Film coating method and device for heterojunction solar cell |
| CN117497644A (en) * | 2023-12-28 | 2024-02-02 | 浙江季丰电子科技有限公司 | Method for repairing solar cell cutting loss and application |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100505668B1 (en) * | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | Method for forming silicon dioxide layer by atomic layer deposition |
| JP4607637B2 (en) * | 2005-03-28 | 2011-01-05 | 東京エレクトロン株式会社 | Silicon nitride film forming method, silicon nitride film forming apparatus and program |
| CN102064237A (en) * | 2010-11-29 | 2011-05-18 | 奥特斯维能源（太仓）有限公司 | Double-layer passivating method for crystalline silicon solar battery |
| CN102157570A (en) * | 2011-01-11 | 2011-08-17 | 上海太阳能电池研究与发展中心 | Composite passivated anti-reflection film used for crystalline silicon solar battery and preparation method thereof |
| CN102403369A (en) * | 2011-10-31 | 2012-04-04 | 晶澳（扬州）太阳能科技有限公司 | Passivation dielectric film for solar cell |
| CN103137714B (en) * | 2011-12-01 | 2016-09-21 | 上海纳米技术及应用国家工程研究中心有限公司 | A kind of three layers of composite passivated reflection reducing layer of solaode and preparation method |
| US9460912B2 (en) * | 2012-04-12 | 2016-10-04 | Air Products And Chemicals, Inc. | High temperature atomic layer deposition of silicon oxide thin films |
| CN202601629U (en) * | 2012-05-25 | 2012-12-12 | 中节能太阳能科技有限公司 | Crystalline silicon solar cell |
| CN102751337B (en) * | 2012-07-31 | 2015-08-12 | 英利集团有限公司 | N-type crystal silicon solar batteries and preparation method thereof |
| CN102881776B (en) * | 2012-10-15 | 2016-06-01 | 浙江正泰太阳能科技有限公司 | A kind of preparation method and solar cell carrying on the back passivation crystal silicon solar energy battery |
| CN103606568A (en) * | 2013-11-21 | 2014-02-26 | 常州天合光能有限公司 | Film passivation structure for crystalline silica solar cell |
| CN104152865A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | Preparation method for silicon nitride thin film |
-
2016
- 2016-03-24 CN CN201610174023.3A patent/CN105870249B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105870249A (en) | 2016-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105870249B (en) | A kind of manufacturing process of crystal silicon solar batteries | |
| CN111192935B (en) | Back passivation structure of tubular PERC solar cell and preparation method thereof | |
| Kim et al. | Texturing of large area multi-crystalline silicon wafers through different chemical approaches for solar cell fabrication | |
| CN107256894A (en) | Tubular type PERC one side solar cells and preparation method thereof and special equipment | |
| CN107256898A (en) | Tubular type PERC double-sided solar batteries and preparation method thereof and special equipment | |
| CN100524847C (en) | Method for improving quality of reflection reduction film of single crystal silicon solar battery | |
| CN102870236A (en) | Multi-layer SiN for functional and optical graded ARC layers on crystalline solar cells | |
| CN103632934B (en) | The Boron diffusion methods of N type silicon chips, crystal silicon solar energy battery and preparation method thereof | |
| CN107068790A (en) | Preparation method, battery, component and the system of p-type PERC solar cells | |
| CN109950363A (en) | A kind of passivating back technique of PERC solar battery | |
| CN102185006A (en) | Method for preparing antireflective film of polycrystalline silicon solar cell as well as polycrystalline silicon solar cell | |
| CN107123702A (en) | The preparation method of polished backside PERC batteries | |
| CN108470800B (en) | Method for reducing TMA consumption of PECVD (plasma enhanced chemical vapor deposition) machine | |
| CN109728104A (en) | Cell piece passivation layer intermediate, solar battery sheet and preparation method thereof | |
| CN113611756A (en) | N-type TOPCon battery and preparation method thereof | |
| CN105977342A (en) | Polysilicon back passivation cell back surface atomic layer deposition preparation alumina film annealing synthesizing technology | |
| CN102903785A (en) | Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation | |
| CN104521003B (en) | The manufacture method of solaode and the solaode manufactured by this manufacture method | |
| CN102931289A (en) | Preparation method of flower piece solar cell | |
| CN104126233B (en) | For the method manufacturing solaode | |
| CN104037264B (en) | A kind of method that PECVD deposits low surface recombination solar cell dielectric layer | |
| CN112838144A (en) | Process method for optimizing uniformity on pyramid suede | |
| CN111584666A (en) | Novel P-type crystalline silicon cell structure and preparation process thereof | |
| CN107452830A (en) | One kind back of the body passivation solar cell and preparation method thereof | |
| CN111129171B (en) | Covering film for alkali polishing and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Co-patentee after: WUXI LEAD INTELLIGENT EQUIPMENT Co.,Ltd. Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: For the 214028 District in Jiangsu province Wuxi City Road No. 7 Co-patentee before: WUXI LEAD INTELLIGENT EQUIPMENT Co.,Ltd. Patentee before: JIANGSU LEADMICRO NANO-EQUIPMENT TECHNOLOGY Ltd. |
|
| CP03 | Change of name, title or address | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201021 Address after: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee after: Jiangsu micro nano technology Co.,Ltd. Address before: 214028 No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. Patentee before: WUXI LEAD INTELLIGENT EQUIPMENT Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP03 | Change of name, title or address |
Address after: No. 27 Changjiang South Road, Xinwu District, Wuxi City, Jiangsu Province, China Patentee after: Jiangsu micro nano technology Co.,Ltd. Country or region after: China Address before: No.11 Lijiang Road, Xinwu District, Wuxi City, Jiangsu Province Patentee before: Jiangsu micro nano technology Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |