CN102899633A - Preparation method of selective emitter battery mask - Google Patents
Preparation method of selective emitter battery mask Download PDFInfo
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- CN102899633A CN102899633A CN2012103693192A CN201210369319A CN102899633A CN 102899633 A CN102899633 A CN 102899633A CN 2012103693192 A CN2012103693192 A CN 2012103693192A CN 201210369319 A CN201210369319 A CN 201210369319A CN 102899633 A CN102899633 A CN 102899633A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method of a selective emitter battery mask. The preparation method is characterized by comprising the following steps: feeding silicon wafer on which a silica etching mask is printed to a plasma enhanced chemical vapor deposition (PECVD) reaction furnace cavity, vacuumizing the furnace cavity; raising the pressure, and simultaneously introducing N2O; detecting the pressure of a furnace pipe, and reducing the pressure in 30 seconds; carrying out pre-deposition, introducing NH3, SiH4 and N2O; depositing, and introducing NH3, SiH4 and N2O in the furnace pipe at the same time; and reducing the temperature after deposition, and simultaneously introducing N2 for purging and cooling. Due to the low temperature effect of the preparation method of silicon oxynitride, the influence of the temperature on the minority carrier lifetime of the silicon wafer is reduced, and meanwhile, when secondary dispersion is carried out, the situation that a silicon nitride mask structure is damaged to cause the functional failure of the mask because a hydrogen bond is broken due to high temperature can be avoided. The effect of the mask provided by the invention is superior to that of a silicon nitride film and other impurity metal ions can be blocked to reduce the pollution to the silicon wafer.
Description
Technical field
The present invention relates to a kind of mask of selective emitter solar battery, be mainly used in the crystal-silicon battery slice aspect, specifically a kind of preparation method of crystal silicon solar selective emitter battery mask.
Background technology
The mask of current selective emitter battery uses silicon-dioxide or silicon nitride preparation mostly, and silicon-dioxide generally adopts the method for high growth temperature, and there is certain thermal damage in high temperature to silicon chip, can affect the minority carrier life time of silicon chip.In addition, high growth temperature prepares earth silicon mask and uses the production cycle long, and silicon dioxide structure is of low quality, and the effect of playing the blocking layer is low; Silicon nitride barrier because high temperature causes the surface tissue damage, has to a certain degree reduced barrier effect when secondary spreads, both all affect the fully realization of selective emitter battery principle.
Summary of the invention
The objective of the invention is after preparing selective emitter cell piece mask by thermooxidizing at present, to cause silicon chip because the problem that high temperature causes minority carrier life time to reduce provides a kind of preparation method of novel mask.
Purpose of the present invention can be achieved through the following technical solutions:
A kind of preparation method of selective emitter battery mask is characterized in that it may further comprise the steps:
The silicon chip that (1) will be printed on etching silicon dioxide mask is sent into plasma enhanced chemical vapor deposition method PECVD reaction boiler tube, and temperature is heated to 400 ~ 430 ℃ in the boiler tube, and pressure is evacuated to 80mTorr in 4min;
(2) rising pressure is to 1700mTorr; Continue 3min, pass into simultaneously N
2The O flow is 4.4slm;
(3) detect boiler tube pressure, reduce pressure in the 30s to 50mTorr;
(4) carry out pre-deposition and process, keep pressure 900 ~ 1200mTorr in 0.3min, power 4300W passes into NH
3Flow is 1 ~ 1.2slm, SiH
4Flow is 230 ~ 270sccm, N
2The O flow is 4 ~ 4.2slm;
(5) depositing treatment, rising furnace temperature to 450 ℃ continues 1.5min, passes into NH simultaneously in boiler tube
3Flow is 2450 ~ 2600sccm, SiH
4Flow is 900 ~ 1000sccm, N
2The O flow is 14 ~ 17slm, and low-frequency power power is kept 4300W;
(6) deposition is cooled to 420 ℃ after complete, and pressure rises to 10000mTorr, continues 5min, passes into simultaneously N
2Purge and cooling process.
The interior temperature of boiler tube is heated to 420 ℃ in the step of the present invention (1).
Temperature is 420 ℃ in the step of the present invention (4), keeps pressure 1000mTorr, the NH that passes into
3Flow is 1slm, SiH
4Flow is 250sccm, N
2The O flow is 4slm.
The NH that passes in the step of the present invention (5)
3Flow is 2500sccm, SiH
4Flow is 900sccm, N
2The O flow is 14slm.
Step of the present invention (6) passes into the N that flow is 9 ~ 12slm
2Purge and cooling process.
N in the step (6)
2Flow is 10slm.
Beneficial effect of the present invention: the used silicon oxynitride film of the present invention adopts the preparation of low-temperature plasma enhanced chemical vapor phase deposition, and depositing temperature is 50% of the high temperature oxidation temperature for preparing silicon dioxide film, reduces high temperature to the damage of silicon chip; Compare silicon nitride mask, the silicon chip damage after the secondary high-temperature diffusion of this novel mask is less, and masking effect is better than silicon nitride film, can also stop other foreign metal ions simultaneously, reduces wafer contamination.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail.
Embodiment 1
A kind of preparation method of selective emitter battery mask is characterized in that it may further comprise the steps:
The silicon chip that (1) will be printed on etching silicon dioxide mask is sent into plasma enhanced chemical vapor deposition method PECVD reaction boiler tube, and temperature is heated to 400 ℃ in the boiler tube, in 4min pressure in the boiler tube is evacuated to 80mTorr;
(2) rising pressure is to 1700mTorr; Continue 3min, pass into simultaneously N
2The O flow is 4.4slm;
(3) detect boiler tube pressure, reduce pressure in the 30s to 50mTorr;
(4) carry out pre-deposition and process, keep pressure 900mTorr in 0.3min, power 4300W passes into NH
3Flow is 1.2slm, SiH
4Flow is 270sccm, N
2The O flow is 4.2slm;
(5) depositing treatment, rising furnace temperature to 450 ℃ continues 1.5min, passes into NH simultaneously in boiler tube
3Flow is 2450sccm, SiH
4Flow is 1000sccm, N
2The O flow is 17slm, and low-frequency power power is kept 4300W;
(6) deposition is cooled to 420 ℃ after complete, and pressure rises to 10000mTorr, continues 5min, passes into simultaneously N
2Purge and cooling process N
2Flow is 9slm.
Embodiment 2
A kind of preparation method of selective emitter battery mask is characterized in that it may further comprise the steps:
The silicon chip that (1) will be printed on etching silicon dioxide mask is sent into plasma enhanced chemical vapor deposition method PECVD reaction boiler tube, and temperature is heated to 420 ℃ in the boiler tube, in 4min pressure in the boiler tube is evacuated to 80mTorr;
(2) rising pressure is to 1700mTorr; Continue 3min, pass into simultaneously N
2The O flow is 4.4slm;
(3) detect boiler tube pressure, reduce pressure in the 30s to 50mTorr;
(4) carry out pre-deposition and process, keep pressure 1000mTorr in 0.3min, power 4300W passes into NH
3Flow is 1slm, SiH
4Flow is 250sccm, N
2The O flow is 4slm;
(5) depositing treatment, rising furnace temperature to 450 ℃ continues 1.5min, passes into NH simultaneously in boiler tube
3Flow is 2500sccm, SiH
4Flow is 900sccm, N
2The O flow is 14slm, and low-frequency power power is kept 4300W;
(6) deposition is cooled to 420 ℃ after complete, and pressure rises to 10000mTorr, continues 5min, passes into simultaneously N
2Purge and cooling process N
2Flow is 10slm.
Embodiment 3
A kind of preparation method of selective emitter battery mask is characterized in that it may further comprise the steps:
The silicon chip that (1) will be printed on etching silicon dioxide mask is sent into plasma enhanced chemical vapor deposition method PECVD reaction boiler tube, and temperature is heated to 430 ℃ in the boiler tube, in 4min pressure in the boiler tube is evacuated to 80mTorr;
(2) rising pressure is to 1700mTorr; Continue 3min, pass into simultaneously N
2The O flow is 4.4slm;
(3) detect boiler tube pressure, reduce pressure in the 30s to 50mTorr;
(4) carry out pre-deposition and process, keep pressure 950mTorr in 0.3min, power 4300W passes into NH
3Flow is 1.1slm, SiH
4Flow is 230sccm, N
2The O flow is 4.1slm;
(5) depositing treatment, rising furnace temperature to 450 ℃ continues 1.5min, passes into NH simultaneously in boiler tube
3Flow is 2600sccm, SiH
4Flow is 950sccm, N
2The O flow is 15slm, and low-frequency power power is kept 4300W;
(6) deposition is cooled to 420 ℃ after complete, and pressure rises to 10000mTorr, continues 5min, passes into simultaneously N
2Purge and cooling process N
2Flow is 12slm.
Claims (6)
1. the preparation method of a selective emitter battery mask is characterized in that it may further comprise the steps:
The silicon chip that (1) will be printed on etching silicon dioxide mask is sent into plasma enhanced chemical vapor deposition method PECVD reaction boiler tube, and temperature is heated to 400 ~ 430 ℃ in the boiler tube, and pressure is evacuated to 80mTorr in 4min;
(2) rising pressure is to 1700mTorr; Continue 3min, pass into simultaneously N
2The O flow is 4.4slm;
(3) detect boiler tube pressure, reduce pressure in the 30s to 50mTorr;
(4) carry out pre-deposition and process, keep pressure 900 ~ 1200mTorr in 0.3min, power 4300W passes into NH
3Flow is 1 ~ 1.2slm, SiH
4Flow is 230 ~ 270sccm, N
2The O flow is 4 ~ 4.2slm;
(5) depositing treatment, rising furnace temperature to 450 ℃ continues 1.5min, passes into NH simultaneously in boiler tube
3Flow is 2450 ~ 2600sccm, SiH
4Flow is 900 ~ 1000sccm, N
2The O flow is 14 ~ 17slm, and low-frequency power power is kept 4300W;
(6) deposition is cooled to 420 ℃ after complete, and pressure rises to 10000mTorr, continues 5min, passes into simultaneously N
2Purge and cooling process.
2. the preparation method of a kind of selective emitter battery mask according to claim 1 is characterized in that the interior temperature of boiler tube is heated to 420 ℃ in the step (1).
3. the preparation method of a kind of selective emitter battery mask according to claim 1 is characterized in that temperature is 420 ℃ in the step (4), keeps pressure 1000mTorr, the NH that passes into
3Flow is 1slm, SiH
4Flow is 250sccm, N
2The O flow is 4slm.
4. the preparation method of a kind of selective emitter battery mask according to claim 1 is characterized in that the NH that passes in the step (5)
3Flow is 2500sccm, SiH
4Flow is 900sccm, N
2The O flow is 14slm.
5. the preparation method of a kind of selective emitter battery mask according to claim 1 is characterized in that step (6) passes into the N that flow is 9 ~ 12slm
2Purge and cooling process.
6. the preparation method of a kind of selective emitter battery mask according to claim 5 is characterized in that N in the step (6)
2Flow is 10slm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201210369319.2A CN102899633B (en) | 2012-09-27 | 2012-09-27 | Preparation method of selective emitter battery mask |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210369319.2A CN102899633B (en) | 2012-09-27 | 2012-09-27 | Preparation method of selective emitter battery mask |
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| CN102899633A true CN102899633A (en) | 2013-01-30 |
| CN102899633B CN102899633B (en) | 2014-05-21 |
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| CN201210369319.2A Expired - Fee Related CN102899633B (en) | 2012-09-27 | 2012-09-27 | Preparation method of selective emitter battery mask |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN104498895A (en) * | 2014-12-23 | 2015-04-08 | 国家纳米科学中心 | Ultrathin silicon oxynitride film material and preparation method and application thereof |
| CN107338424A (en) * | 2017-08-07 | 2017-11-10 | 苏州阿特斯阳光电力科技有限公司 | A kind of gas control method and equipment of PECVD plated films |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2007017504A1 (en) * | 2005-08-10 | 2007-02-15 | Commissariat A L'energie Atomique | Antireflection coating, particularly for solar cells, and method for producing this coating |
| US20090096106A1 (en) * | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
| CN101447526A (en) * | 2007-11-30 | 2009-06-03 | 株式会社半导体能源研究所 | Method of manufacturing photoelectric conversion device |
| CN102185012A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for plating silicon nitride anti-reflecting film |
-
2012
- 2012-09-27 CN CN201210369319.2A patent/CN102899633B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007017504A1 (en) * | 2005-08-10 | 2007-02-15 | Commissariat A L'energie Atomique | Antireflection coating, particularly for solar cells, and method for producing this coating |
| US20090096106A1 (en) * | 2007-10-12 | 2009-04-16 | Air Products And Chemicals, Inc. | Antireflective coatings |
| CN101447526A (en) * | 2007-11-30 | 2009-06-03 | 株式会社半导体能源研究所 | Method of manufacturing photoelectric conversion device |
| CN102185012A (en) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | Method for plating silicon nitride anti-reflecting film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367467A (en) * | 2013-08-02 | 2013-10-23 | 浙江正泰太阳能科技有限公司 | Solar cell |
| CN104498895A (en) * | 2014-12-23 | 2015-04-08 | 国家纳米科学中心 | Ultrathin silicon oxynitride film material and preparation method and application thereof |
| CN104498895B (en) * | 2014-12-23 | 2017-02-22 | 国家纳米科学中心 | Ultrathin silicon oxynitride film material and preparation method and application thereof |
| CN107338424A (en) * | 2017-08-07 | 2017-11-10 | 苏州阿特斯阳光电力科技有限公司 | A kind of gas control method and equipment of PECVD plated films |
| CN107338424B (en) * | 2017-08-07 | 2020-03-03 | 苏州阿特斯阳光电力科技有限公司 | Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating |
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| CN102899633B (en) | 2014-05-21 |
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