CN107338424B - Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating - Google Patents
Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating Download PDFInfo
- Publication number
- CN107338424B CN107338424B CN201710665452.5A CN201710665452A CN107338424B CN 107338424 B CN107338424 B CN 107338424B CN 201710665452 A CN201710665452 A CN 201710665452A CN 107338424 B CN107338424 B CN 107338424B
- Authority
- CN
- China
- Prior art keywords
- film layer
- gas
- silicon nitride
- flow
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000011248 coating agent Substances 0.000 title claims abstract description 15
- 238000000576 coating method Methods 0.000 title claims abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 127
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 80
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 69
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910000077 silane Inorganic materials 0.000 claims abstract description 49
- 235000013842 nitrous oxide Nutrition 0.000 claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 60
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 60
- 230000008859 change Effects 0.000 claims description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 230000006872 improvement Effects 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention relates to the technical field of solar cell manufacturing, in particular to a gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating. The method comprises the following steps: respectively connecting a silane gas supply pipeline, an ammonia gas supply pipeline and a laughing gas supply pipeline to a reaction cavity of the PECVD, and configuring a gas flow controller on each gas supply pipeline; setting flow parameters of three gases of silane, ammonia and laughing gas according to the structure of each layer of the film to be plated; and the gas flow controllers respectively control and input corresponding gas into the reaction cavity of the PECVD according to the set flow parameters. The method can realize quantitative control of the flow of the gas and variable control of the flow of the gas through the gas flow controller, and three gases, namely ammonia gas, silane and laughing gas, are respectively introduced into a reaction cavity of the PECVD during film coating, so that the film structure produced by the method has better optical characteristics.
Description
Technical Field
The invention relates to the technical field of solar cell manufacturing, in particular to a gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating.
Background
At present, a PEVCD (Plasma Enhanced Chemical vapor deposition) mode is commonly used in the crystalline silicon solar cell industry to manufacture an antireflection film, special gases commonly used by a corresponding tubular PEVCD machine are ammonia gas and silane, and the machine can only supply the flow of the ammonia gas and the silane quantitatively and cannot control the variables, so that the conventional antireflection film is generally in a 2-3-layer silicon nitride film structure, and the structure has high reflectivity and no advantage in the performance of resisting PID (Potential Induced Degradation) performance.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The invention aims to provide a gas control method and equipment for PECVD coating, which aim to solve the technical problem that the optical characteristics of a formed film structure are poor due to single type of special gas supply and only quantitative special gas supply in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a gas control method for PECVD coating, comprising the steps of:
s1, respectively connecting a silane gas supply pipeline, an ammonia gas supply pipeline and a laughing gas supply pipeline to a reaction cavity of the PECVD, and configuring a gas flow controller on each gas supply pipeline;
s2, setting flow parameters of silane, ammonia gas and laughing gas according to the structure of each layer of film to be plated;
s3, the gas flow controller respectively controls and inputs the corresponding gas into the reaction cavity of the PECVD according to the set flow parameters.
As a further technical solution, the film structure to be plated in step S2 includes a non-graded film; when the non-gradient film layer is generated, the set flow parameter of each gas is a fixed value.
As a further technical solution, the film layer structure to be plated in step S2 further includes a gradient film layer; when the gradual change film layer is generated, the set flow parameter of each gas is a gradual change value.
As a further technical solution, the gradient value varies linearly according to a specific slope k, and the slope k satisfies:
K＝(Q1-Q2)/t
wherein Q is1Expressing the flow rate, Q, required for each gas before each layer is graded2The flow rate required by each gas after each layer is gradually changed is shown, and t represents the time required by the gradual change process of each layer.
As a further technical solution, the non-graded film layer includes a first silicon oxynitride film layer and a first silicon nitride film layer, the graded film layer includes a first silicon nitride graded film layer, the first silicon nitride film layer is deposited on the first silicon oxynitride film layer, and the first silicon nitride graded film layer is deposited on the first silicon nitride film layer;
when the first silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 5-1: 20: 10;
when the first silicon nitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia gas is set to be 1: 3-1: 5;
when the first silicon nitride gradient film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 8-1: 20: 15.
As a further technical solution, the non-graded film layer includes a second silicon nitride film layer and a second silicon oxynitride film layer, the graded film layer includes a second silicon nitride graded film layer, the second silicon nitride graded film layer is deposited on the second silicon nitride film layer, and the second silicon oxynitride film layer is deposited on the second silicon nitride graded film layer;
when the second silicon nitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia gas is set to be 1: 3-1: 6;
when the second silicon nitride gradual change film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 8-1: 16: 12;
when the second silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:8: 5-1: 12: 10.
As a further technical solution, the non-graded film layer includes a third silicon oxynitride film layer, and the graded film layer includes a third silicon nitride graded film layer; depositing the third silicon oxynitride film layer on the third silicon nitride gradient film layer;
when the third silicon nitride gradient film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:4: 5-1: 16: 20;
when the third silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:12: 10-1: 20: 18.
As a further technical solution, step S3 further includes the following steps:
and setting the required process time according to the structure of each layer of film to be plated, and controlling and inputting the corresponding gas into the reaction cavity of the PECVD by the gas flow controller according to the set process time.
By adopting the technical scheme, the invention has the following beneficial effects:
the invention provides a gas control method for PECVD coating, which can realize quantitative control of gas flow and variable control of gas flow through a gas flow controller, and can respectively introduce three gases, namely ammonia gas, silane and laughing gas into a reaction cavity of the PECVD during coating, so that a film structure produced by the method has better optical characteristics.
In a second aspect, the present invention further provides a PECVD apparatus for implementing the gas control method for PECVD coating, which includes a PECVD reaction chamber and at least three gas supply lines, each gas supply line is connected to the PECVD reaction chamber, and a gas flow controller is disposed on each gas supply line.
Furthermore, the PECVD equipment also comprises a gas supply device, wherein the gas supply device is connected with each gas supply pipeline through a control valve.
By adopting the technical scheme, the invention has the following beneficial effects:
the invention provides PECVD equipment, wherein at least three gas supply pipelines are connected to a reaction cavity of the PECVD equipment to ensure that three gases, namely ammonia gas, silane and laughing gas, can be independently supplied, and a gas flow controller is arranged on each gas supply pipeline, so that the flow of the gas can be quantitatively controlled, and the flow of the gas can be variably controlled. Therefore, the film structure produced by the device has better optical characteristics.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart illustrating a gas control method for PECVD coating according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Example one
As shown in fig. 1, the present embodiment provides a gas control method for PECVD coating, which includes the following steps:
s1, connecting the silane gas supply pipeline, the ammonia gas supply pipeline and the laughing gas supply pipeline to the reaction cavity of PECVD respectively, and configuring a gas flow controller on each gas supply pipeline, wherein each gas supply pipeline is independently arranged, namely, a gas flow controller is correspondingly installed on the silane gas supply pipeline, a gas flow controller is installed on the ammonia gas supply pipeline, and a gas flow controller is installed on the laughing gas supply pipeline.
S2, setting flow parameters of silane, ammonia gas and laughing gas according to the structure of each layer of film to be plated.
The film layer structure to be plated may include a non-graded film layer, for example: a silicon nitride film layer and a silicon oxynitride film layer. When these non-graded film layers are produced, the flow parameter of each gas that is set is a fixed value, i.e., the function that the gas flow controller performs at this time is a quantitative control function.
Wherein, the film layer structure to be plated further comprises a gradual change film layer, for example: a silicon nitride gradient film layer; when the gradual change film layer is generated, the set flow parameter of each gas is a gradual change value, and the function executed by the gas flow controller at the moment is a variable control function.
Specifically, the gradient value varies linearly according to a specific slope k, and the slope k satisfies:
K＝(Q1-Q2)/t
wherein Q is1Expressing the flow rate, Q, required for each gas before each layer is graded2The flow rate required by each gas after each layer is gradually changed is shown, and t represents the time required by the gradual change process of each layer. It can be understood that, the gas flow rate of the gradual change film layer is set to be higher than the flow rate of the non-gradual change film layer, and a slope gradual change calculation and control process is added, and the specific calculation method is as follows: the difference of the gas flow of the steps before and after gradual change is divided by the process time setting of the gradual change film layer, namely the flow difference is divided by the process time, so that the gas flow change value of each step is obtained, the change of the gas flow leads to the linear change of the proportion among the silane, the ammonia gas and the laughing gas, and the gradual change of the refractive index is realized through the linear change of the proportion. That is, ammonia, silane and laughing gas can be increased or decreased regularly and quantitatively to achieve the capability of gradual control of the refractive index, the minimum interval of gradual change of the refractive index is 0.001, and the interval of gradual change of the refractive index in the conventional process is 0.02, for example: the silicon nitride gradient film layer can form a gradient film layer with the refractive index which is reduced from bottom to top in sequence and without obvious limit.
S3, the gas flow controller respectively controls and inputs the corresponding gas into the reaction chamber of the PECVD according to the set flow parameters, for example: the required flow is set in the machine control system, the control system transmits a signal to the gas flow controller, and the gas flow controller gives out corresponding flow according to the set flow. In addition, the required process time is set according to the structure of each film layer to be plated, and the gas flow controller can also control and input corresponding gas into the reaction cavity of the PECVD according to the set process time.
Therefore, the method can realize quantitative control of the gas flow and variable control of the gas flow through the gas flow controller, so that a plurality of layers of gradient films can be designed, and the reflectivity is greatly reduced. And because laughing gas is added, a silicon oxynitride film layer with a certain thickness can be designed on the window layer or the bottom layer, and the PID resistance of the film layer is improved.
The process of gas control by this method is illustrated in several specific film structures.
A first film layer structure
The non-gradient film layer comprises a first silicon oxynitride film layer and a first silicon nitride film layer, the gradient film layer comprises a first silicon nitride gradient film layer, the first silicon nitride film layer is deposited on the first silicon oxynitride film layer, and the first silicon nitride gradient film layer is deposited on the first silicon nitride film layer;
when the first silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 5-1: 20: 10; wherein, the flow ratio of the silane, the ammonia gas and the laughing gas is preferably 1:15: 8.
When the first silicon nitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia gas is set to be 1: 3-1: 5; wherein, the flow ratio of the silane to the ammonia gas is preferably 1: 4.
When the first silicon nitride gradient film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 8-1: 20: 15. Wherein, the flow ratio of the silane, the ammonia gas and the laughing gas is preferably 1:15: 10. The reaction time (slope time) is controlled within the range of 50-400 s, and the time is preferably 200 s.
Second and second film layer structure
The non-gradual change film layer comprises a second silicon nitride film layer and a second silicon nitride oxide film layer, the gradual change film layer comprises a second silicon nitride gradual change film layer, the second silicon nitride gradual change film layer is deposited on the second silicon nitride film layer, and the second silicon nitride oxide film layer is deposited on the second silicon nitride gradual change film layer;
when the second silicon nitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia gas is set to be 1: 3-1: 6; wherein, the flow ratio of the silane to the ammonia gas is preferably 1: 4.
When the second silicon nitride gradual change film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 8-1: 16: 12; the flow ratio of the silane, the ammonia gas and the laughing gas is preferably 1:12:10, and the reaction time (slope time) is controlled within a range of 50-200 s, preferably 150 s.
When the second silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:8: 5-1: 12: 10. Wherein, the flow ratio of the silane, the ammonia gas and the laughing gas is preferably 1:10: 6.
Third, third film layer structure
The non-gradient film layer comprises a third silicon oxynitride film layer, and the gradient film layer comprises a third silicon nitride gradient film layer; depositing the third silicon oxynitride film layer on the third silicon nitride gradient film layer;
when the third silicon nitride gradient film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:4: 5-1: 16: 20; wherein, the flow ratio of the silane, the ammonia gas and the laughing gas is preferably 1:8: 10. The reaction time (slope time) is controlled within 200-600 s, preferably 400 s.
When the third silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:12: 10-1: 20: 18. Wherein, the flow ratio of the silane, the ammonia gas and the laughing gas is preferably 1:15: 12.
The following table shows the electrical performance parameters of the polysilicon solar cell fabricated according to the three film structures.
| Classification | EFF | Uoc | Isc | FF | Rs | Rsh |
| Comparison group | 18.83％ | 636.2 | 9.057 | 80.28 | 1.60 | 233 |
| First one | 18.93％ | 636.7 | 9.116 | 80.12 | 1.73 | 484 |
| Second kind | 18.95％ | 637.1 | 9.110 | 80.22 | 1.67 | 581 |
| Third kind | 18.93％ | 636.2 | 9.121 | 80.12 | 1.71 | 328 |
Wherein, EFF is the photoelectric conversion efficiency, Uoc is the open-circuit voltage, Isc is the short-circuit current, FF is the fill factor, Rs is the series resistance, Rsh is the parallel resistance. From the electrical performance parameters obtained from the tests it can be seen that:
the first method comprises the following steps: compared with a comparison group, the photoelectric conversion efficiency is improved by 0.10%, the electrical performance parameters are mainly represented by 0.5mV improvement of Uoc and 59mA improvement of Isc.
And the second method comprises the following steps: compared with a comparison group, the photoelectric conversion efficiency is improved by 0.12%, the electrical performance parameters are mainly represented by 0.9mV improvement of Uoc and 53mA improvement of Isc.
And the third is that: compared with a comparison group, the photoelectric conversion efficiency is improved by 0.10%, and the electrical performance parameters are mainly improved by 64mA in Isc.
It should be noted that the solar cell used in the above comparative group is made of a conventional antireflection film, the conventional antireflection film adopts a 3-layer silicon nitride film structure, the refractive index of each silicon nitride film structure is fixed, the refractive index of the bottom layer is usually selected to be a certain value greater than or equal to 2.18, the refractive index of the middle layer is usually selected to be a certain value greater than or equal to 2.05, and the refractive index of the outermost layer is 2.0. By comparison, the first, second and third film layer structures of the examples all exhibited better performance than the control.
Example two
A second embodiment provides a PECVD apparatus for implementing the gas control method for PECVD coating according to the first embodiment, which includes a reaction chamber for PECVD and at least three gas supply lines to ensure that three gases, namely ammonia gas, silane and laughing gas, can be supplied separately, each gas supply line is connected to the reaction chamber for PECVD, and a gas flow controller is disposed on each gas supply line, so that not only can quantitative control of gas flow be implemented, but also variable control of gas flow can be implemented. Therefore, the film structure produced by the device has better optical characteristics.
In addition, the PECVD apparatus includes other related basic components.
For example: the PECVD equipment also comprises a gas supply device, wherein the gas supply device is connected with each gas supply pipeline through a control valve.
Another example is: the PECVD equipment also comprises a vacuumizing device, and the vacuumizing device can realize vacuumizing operation on the reaction cavity of the PECVD.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (4)
1. A gas control method for PECVD coating is characterized by comprising the following steps:
s1, respectively connecting a silane gas supply pipeline, an ammonia gas supply pipeline and a laughing gas supply pipeline to a reaction cavity of the PECVD, and configuring a gas flow controller on each gas supply pipeline;
s2, setting flow parameters of silane, ammonia gas and laughing gas according to the structure of each layer of film to be plated;
s3, the gas flow controller respectively controls and inputs the corresponding gas into the reaction cavity of the PECVD according to the set flow parameters;
in the step S2, the film structure to be plated includes a non-gradient film layer, the non-gradient film layer includes a first silicon oxynitride film layer and a first silicon nitride film layer, and the first silicon nitride film layer is deposited on the first silicon oxynitride film layer;
when the first silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 5-1: 20: 10;
when the first silicon nitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia gas is set to be 1: 3-1: 5;
when the non-gradual change film layer is generated, the set flow parameter of each gas is a fixed value;
in step S2, the film structure to be plated further includes a gradient film layer, where the gradient film layer includes a first silicon nitride gradient film layer, and the first silicon nitride gradient film layer is deposited on the first silicon nitride film layer;
when the first silicon nitride gradient film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 8-1: 20: 15;
when the gradual change film layer is generated, the set flow parameter of each gas is a gradual change value, the gradual change value is linearly changed according to a specific slope k, and the slope k meets the following conditions:
K＝(Q1-Q2)/t
wherein Q1 represents the flow rate required by each gas before each layer is graded, Q2 represents the flow rate required by each gas after each layer is graded, and t represents the time required by the grading process of each layer.
2. The gas control method of PECVD coating film of claim 1 wherein the non-graded film layer comprises a second silicon nitride film layer and a second silicon nitride oxide film layer, the graded film layer comprises a second silicon nitride graded film layer, the second silicon nitride graded film layer is deposited on the second silicon nitride film layer, the second silicon nitride oxide film layer is deposited on the second silicon nitride graded film layer;
when the second silicon nitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia gas is set to be 1: 3-1: 6;
when the second silicon nitride gradual change film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:10: 8-1: 16: 12;
when the second silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relation: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:8: 5-1: 12: 10.
3. The gas control method for PECVD coating film of claim 1 wherein the non-graded film layer comprises a third SiON film layer and the graded film layer comprises a third SiN graded film layer; depositing the third silicon oxynitride film layer on the third silicon nitride gradient film layer;
when the third silicon nitride gradient film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:4: 5-1: 16: 20;
when the third silicon oxynitride film layer is generated, the flow parameters of the corresponding various gases need to satisfy the following proportional relationship: the flow ratio of the silane to the ammonia to the laughing gas is set to be 1:12: 10-1: 20: 18.
4. The method of claim 1, wherein step S3 further comprises the following steps:
and setting the required process time according to the structure of each layer of film to be plated, and controlling and inputting the corresponding gas into the reaction cavity of the PECVD by the gas flow controller according to the set process time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710665452.5A CN107338424B (en) | 2017-08-07 | 2017-08-07 | Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710665452.5A CN107338424B (en) | 2017-08-07 | 2017-08-07 | Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107338424A CN107338424A (en) | 2017-11-10 |
| CN107338424B true CN107338424B (en) | 2020-03-03 |
Family
ID=60217680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710665452.5A Active CN107338424B (en) | 2017-08-07 | 2017-08-07 | Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107338424B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109935717B (en) | 2017-12-15 | 2021-05-25 | 京东方科技集团股份有限公司 | Packaging structure, packaging method, electroluminescent device and display device |
| CN110016657B (en) * | 2018-01-08 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Flow control method and device and reaction chamber |
| CN108493263A (en) * | 2018-03-20 | 2018-09-04 | 江苏东鋆光伏科技有限公司 | A kind of anti-PID photovoltaic cells and preparation method thereof |
| CN111139448B (en) * | 2019-12-25 | 2022-03-29 | 浙江鸿禧能源股份有限公司 | PECVD (plasma enhanced chemical vapor deposition) film coating process |
| CN113981415B (en) * | 2021-10-25 | 2024-03-08 | 石家庄晶澳太阳能科技有限公司 | Method and device for determining abnormal operation of flowmeter of tubular PECVD system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423654B1 (en) * | 1999-02-08 | 2002-07-23 | Samsung Electronics, Co., Ltd. | Method of manufacturing a semiconductor device having silicon oxynitride passavation layer |
| CN101807633A (en) * | 2009-02-18 | 2010-08-18 | 大连美明外延片科技有限公司 | Luminous diode chip and manufacturing method thereof |
| CN102534547A (en) * | 2011-12-16 | 2012-07-04 | 合肥晶澳太阳能科技有限公司 | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell |
| CN102899633A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Preparation method of selective emitter battery mask |
| CN104762610A (en) * | 2015-01-16 | 2015-07-08 | 横店集团东磁股份有限公司 | PECVD film coating method |
| CN106756872A (en) * | 2016-12-21 | 2017-05-31 | 电子科技大学 | A kind of high flux CVD prepares the device of siloxicon film |
-
2017
- 2017-08-07 CN CN201710665452.5A patent/CN107338424B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423654B1 (en) * | 1999-02-08 | 2002-07-23 | Samsung Electronics, Co., Ltd. | Method of manufacturing a semiconductor device having silicon oxynitride passavation layer |
| CN101807633A (en) * | 2009-02-18 | 2010-08-18 | 大连美明外延片科技有限公司 | Luminous diode chip and manufacturing method thereof |
| CN102534547A (en) * | 2011-12-16 | 2012-07-04 | 合肥晶澳太阳能科技有限公司 | Preparation process for gradient antireflection silicon nitride thin film of crystalline silicon solar cell |
| CN102899633A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Preparation method of selective emitter battery mask |
| CN104762610A (en) * | 2015-01-16 | 2015-07-08 | 横店集团东磁股份有限公司 | PECVD film coating method |
| CN106756872A (en) * | 2016-12-21 | 2017-05-31 | 电子科技大学 | A kind of high flux CVD prepares the device of siloxicon film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107338424A (en) | 2017-11-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107338424B (en) | Gas control method and equipment for PECVD (plasma enhanced chemical vapor deposition) coating | |
| TWI840362B (en) | Wafer handling chamber with moisture reduction | |
| WO2011109228A1 (en) | Photovoltaic device with graded buffer layer | |
| US9512519B2 (en) | Atomic layer deposition apparatus and method | |
| CN107492576A (en) | A kind of antireflective coating and polycrystalline silicon solar cell | |
| CN103794658A (en) | Composite membrane efficient crystalline silicon solar cell and manufacturing method of composite membrane efficient crystalline silicon solar cell | |
| US6576061B1 (en) | Apparatus and method for processing a substrate | |
| CN210778613U (en) | Solar cell multilayer antireflection gradual change film | |
| CN107092193A (en) | Tracking and controlling method independent of the non-linear pure time delay system of ideal trajectory | |
| CN202695460U (en) | Silicon nitride film, silicon wafer containing the same, and solar cell | |
| CN113013023B (en) | Vapor phase epitaxy method | |
| CN102820342A (en) | Silicon nitride film, preparation method, silicon wafer containing silicon nitride film and solar battery | |
| US11859310B2 (en) | Vapor phase epitaxy method | |
| CN113005514B (en) | Vapor phase epitaxy method | |
| CN113013024B (en) | Vapor phase epitaxy method | |
| CN104319294A (en) | Improved method for plating silicon nitride antireflection film | |
| CN111029414B (en) | Multilayer SiN prepared by solar single crystal PERCxBack film process method | |
| US6274461B1 (en) | Method for depositing layers of high quality semiconductor material | |
| CN105514181A (en) | Texture structured TCO thin-film and preparation method thereof and thin-film solar cell | |
| CN112764346A (en) | Distributed active disturbance rejection multivariable control method | |
| CN203721736U (en) | Composite membrane high-efficiency crystalline silicon solar cell | |
| CN112928065B (en) | Deep hole forming method and three-dimensional memory forming method | |
| US20230195072A1 (en) | Disturbance compensation for substrate processing recipes | |
| CN117265510B (en) | Atomic layer deposition method and atomic layer deposition system | |
| CN118261114B (en) | Thin film data system design method, storage medium and terminal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |