CN107492576A - A kind of antireflective coating and polycrystalline silicon solar cell - Google Patents
A kind of antireflective coating and polycrystalline silicon solar cell Download PDFInfo
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- CN107492576A CN107492576A CN201710665453.XA CN201710665453A CN107492576A CN 107492576 A CN107492576 A CN 107492576A CN 201710665453 A CN201710665453 A CN 201710665453A CN 107492576 A CN107492576 A CN 107492576A
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- 239000006117 anti-reflective coating Substances 0.000 title claims abstract description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 152
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 152
- 230000008859 change Effects 0.000 claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- 239000010703 silicon Substances 0.000 claims abstract description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 87
- 239000012528 membrane Substances 0.000 claims abstract description 10
- 238000003475 lamination Methods 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 112
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 84
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 64
- 229910000077 silane Inorganic materials 0.000 claims description 64
- 229910021529 ammonia Inorganic materials 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 48
- 235000013842 nitrous oxide Nutrition 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 31
- 230000035484 reaction time Effects 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 241000208340 Araliaceae Species 0.000 claims 3
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 3
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 3
- 235000008434 ginseng Nutrition 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 200
- 230000000694 effects Effects 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000009466 transformation Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Surface Treatment Of Optical Elements (AREA)
Abstract
The present invention relates to polycrystalline silicon solar cell technical field, more particularly, to a kind of antireflective coating and polycrystalline silicon solar cell.The antireflective coating comprises at least silicon oxynitride film and silicon nitride gradual change film layer, and the membrane structure of lamination shape is formed between silicon oxynitride film and silicon nitride the gradual change film layer.Wherein, the refractive index height gradual change of the silicon nitride gradual change film layer, reduces the reflection of light, so as to realize the purpose for reducing reflectivity；Meanwhile the silicon oxynitride film has anti-PID performance.
Description
Technical field
The present invention relates to polycrystalline silicon solar cell technical field, more particularly, to a kind of antireflective coating and the polysilicon sun
Battery.
Background technology
The main trend of solar cell development is high conversion efficiency and low cost.In order to improve the conversion efficiency of battery,
The light reflection of battery surface is reduced, the effective absorption for increasing light is very necessary.Antireflective coating is used to reduce battery surface
Reflection loss to light, it is a kind of method for improving conversion ratio and reducing cost.
At present, crystal-silicon solar cell industry generally uses PEVCD (Plasma Enhanced Chemical Vapor
Deposition, plasma enhanced chemical vapor deposition) mode produces antireflective coating, and corresponding tubular type PEVCD boards are general
It is ammonia and silane all over used special gas, because board can only quantify the flow of control ammonia and silane, therefore, traditional subtracts
Reflectance coating is usually 2 to 3 layers of silicon nitride film Rotating fields, and the reflectivity of this structure is higher, and in anti-PID (Potential
Induced Degradation, high pressure induced attenuation effect) in performance without advantage.
The information for being disclosed in the background section is merely intended to deepen the understanding of the general background technology to the present invention, and
It is not construed as recognizing or implies information structure prior art known to those skilled in the art in any form.
The content of the invention
It is an object of the invention to provide a kind of antireflective coating and polycrystalline silicon solar cell, to solve existing antireflective coating
Present in reflectivity it is higher, the technical problem of anti-PID poor performances.
To achieve these goals, the present invention uses following technical scheme：
In a first aspect, the present invention provides a kind of antireflective coating, it comprises at least silicon oxynitride film and silicon nitride graded films
Layer, the membrane structure of formation lamination shape between silicon oxynitride film and silicon nitride the gradual change film layer.
As a kind of further technical scheme, the antireflective coating includes the first silicon oxynitride film, the first silicon nitride film
Layer and the first silicon nitride gradual change film layer；First silicon nitride film layer is deposited on first silicon oxynitride film, described
First silicon nitride gradual change film layer is deposited on first silicon nitride film layer.
Preferably, first silicon oxynitride film meets following Parameter Conditions：
The thickness of first silicon oxynitride film is arranged to 1~5nm；
The refractive index of first silicon oxynitride film is arranged to 1.5~1.9；
Used special gas bag includes silane, ammonia when first silicon oxynitride film carries out plated film using PECAD techniques
And laughing gas, the flow proportional of the silane, ammonia and laughing gas three are arranged to 1:10:5~1:20:10.
Preferably, first silicon nitride film layer meets following Parameter Conditions：
The first silicon nitride film layer thickness is arranged to 10~30nm；
The refractive index of first silicon nitride film layer is arranged to 2.15~2.35；
Used special gas bag includes silane and ammonia when first silicon nitride film layer carries out plated film using PECAD techniques,
The flow proportional of the silane and both ammonias is arranged to 1:3~1:5.
Preferably, the first silicon nitride gradual change film layer meets following Parameter Conditions：
The thickness of the first silicon nitride gradual change film layer is arranged to 50~75nm；
The gradually changed refractive index scope 1.6~2.10 of the first silicon nitride gradual change film layer；
Used special gas bag includes silane, ammonia when the first silicon nitride gradual change film layer carries out plated film using PECAD techniques
Gas and laughing gas, by control the flow-rate ratio parameter of special gas with formed refractive index can ramp control the first silicon nitride graded films
Layer, wherein, the flow proportional of the silane, ammonia and laughing gas three is arranged to 1:10:8~1:20:15, reaction time control model
Enclose 50~400s.
As a kind of further technical scheme, the antireflective coating includes the second silicon nitride film layer, the second silicon nitride gradual change
Film layer and the second silicon oxynitride film；The second silicon nitride gradual change film layer is deposited on second silicon nitride film layer, institute
State the second silicon oxynitride film and be deposited on the second silicon nitride gradual change film layer.
Preferably, second silicon nitride film layer meets following Parameter Conditions：
The thickness of second silicon nitride film layer is arranged to 8~30nm；
The refractive index of second silicon nitride film layer is arranged to 2.15~2.35；
Used special gas bag includes silane and ammonia when second silicon nitride film layer carries out plated film using PECAD techniques,
The flow proportional of the silane and both ammonias is arranged to 1:3~1:6.
Preferably, the second silicon nitride gradual change film layer meets following Parameter Conditions：
60~75nm of thickness control scope of the second silicon nitride gradual change film layer；
The gradually changed refractive index scope 1.8~2.10 of the second silicon nitride gradual change film layer；
Used special gas bag includes silane, ammonia when the second silicon nitride gradual change film layer carries out plated film using PECAD techniques
Gas and laughing gas, by control the flow-rate ratio parameter of special gas with formed refractive index can ramp control the second silicon nitride graded films
Layer, wherein, the flow proportional of the silane, ammonia and laughing gas three is arranged to 1:10:8~1:16:12, reaction time control model
Enclose 50~200s.
Preferably, second silicon oxynitride film meets following Parameter Conditions：
The thickness of second silicon oxynitride film is arranged to 2~8nm；
The refractive index of second silicon oxynitride film is arranged to 1.5~1.8；
Used special gas bag includes silane, ammonia when second silicon oxynitride film carries out plated film using PECAD techniques
And laughing gas, the flow proportional of the silane, ammonia and laughing gas three are arranged to 1:8:5~1:12:10.
As a kind of further technical scheme, the antireflective coating includes the 3rd silicon nitride gradual change film layer and the 3rd nitrogen oxidation
Silicon film；3rd silicon oxynitride film is deposited on the 3rd silicon nitride gradual change film layer.
Preferably, the 3rd silicon nitride gradual change film layer meets following Parameter Conditions：
The thickness of the 3rd silicon nitride gradual change film layer is arranged to 70~85nm；
The gradually changed refractive index scope 1.8~2.35 of the 3rd silicon nitride gradual change film layer；
Used special gas bag includes silane, ammonia when the 3rd silicon nitride gradual change film layer carries out plated film using PECAD techniques
Gas and laughing gas, by controlling the flow-rate ratio parameter of special gas, with formed refractive index can ramp control the 3rd silicon nitride gradual change
Film layer, wherein, the flow proportional of the silane, ammonia and laughing gas three is arranged to 1:4:5~1:16:20, reaction time control
200~600s of scope.
Preferably, the 3rd silicon oxynitride film meets following Parameter Conditions：
The thickness of 3rd silicon oxynitride film is arranged to 2~8nm；
The refractive index of 3rd silicon oxynitride film is arranged to 1.5~1.8；
Used special gas bag includes silane, ammonia when 3rd silicon oxynitride film carries out plated film using PECAD techniques
And laughing gas, the flow proportional of the silane, ammonia and laughing gas three are arranged to 1:12:10~1:20:18.
Using above-mentioned technical proposal, the present invention has the advantages that：
The present invention provides a kind of antireflective coating, and silicon oxynitride film and silicon nitride gradual change film layer are formed to the film of lamination shape
Structure, the refractive index height gradual change of the silicon nitride gradual change film layer, reduces the reflection of light, so as to realize the mesh for reducing reflectivity
's；Meanwhile the silicon oxynitride film has anti-PID performance.
Second aspect, the present invention provide a kind of polycrystalline silicon solar cell, and it includes described antireflective coating.
Using above-mentioned technical proposal, the present invention has the advantages that：
The present invention provides a kind of polycrystalline silicon solar cell, and the polycrystalline silicon solar cell employs above-mentioned antireflective coating, has
Have and above-mentioned antireflective coating identical effect, i.e. the reflection of light can be reduced, realize the purpose for reducing reflectivity, had again anti-
PID performance.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The required accompanying drawing used is briefly described in embodiment or description of the prior art, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation for the antireflective coating that the embodiment of the present invention two provides；
Fig. 2 is the structural representation for the antireflective coating that the embodiment of the present invention three provides；
Fig. 3 is the structural representation for the antireflective coating that the embodiment of the present invention four provides.
Reference：
1a- the first silicon nitride gradual change film layers；The silicon nitride film layers of 2a- first；
The silicon oxynitride films of 3a- first；1b- the second silicon nitride gradual change film layers；
The silicon nitride film layers of 2b- second；The silicon oxynitride films of 3b- second；
The silicon nitride gradual change film layers of 1c- the 3rd；The silicon oxynitride films of 3c- the 3rd；
4- silicon chips.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
The embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
Embodiment one
With reference to shown in Fig. 1 to Fig. 3, the present embodiment one provides a kind of antireflective coating, its comprise at least silicon oxynitride film and
Silicon nitride gradual change film layer, the membrane structure of lamination shape is formed between the silicon oxynitride film and silicon nitride gradual change film layer.It can be seen that should
Membrane structure has the effect for the performance for reducing reflectivity and anti-PID.It is understood that the silicon oxynitride film and silicon nitride
Gradual change film layer can be regarded as having certain thickness layered thin-film structure, and one is located at by the way that both layered thin-film structures are folded
Rise and form the antireflective coating.Wherein, silicon oxynitride film has anti-PID performance, and silicon nitride gradual change film layer, which has to reduce, to reflect
Rate effect.
The present embodiment can use PECVD to carry out plated film, can press silicon oxynitride film and silicon nitride gradual change film layer during plated film
Certain arrangement mode is correspondingly deposited on silicon chip 4.Can for the arrangement position of silicon oxynitride film and silicon nitride gradual change film layer
Adaptability setting is carried out according to being actually needed, that is to say, that the silicon oxynitride film can both be arranged on silicon nitride gradual change film layer
On, it can also be arranged under silicon nitride gradual change film layer.
To sum up, the antireflective coating forms silicon oxynitride film and silicon nitride gradual change film layer the membrane structure of lamination shape, should
The refractive index height gradual change of silicon nitride gradual change film layer, reduces the reflection of light, so as to reduce reflectivity；Meanwhile the nitrogen oxidation
Silicon film has anti-PID performance.
Embodiment two
With reference to shown in Fig. 1, the present embodiment two is on the basis of embodiment one, there is provided a kind of further technical side
Case.
The antireflective coating includes the first silicon oxynitride film 3a, the first silicon nitride film layer 2a and the first silicon nitride gradual change film layer
1a；First silicon nitride film layer 2a is deposited on the first silicon oxynitride film 3a, and the first silicon nitride gradual change film layer 1a is deposited on
On one silicon nitride film layer 2a.Certainly, the first silicon oxynitride film 3a can also be corresponded to and be deposited on silicon chip 4 in plated film.
Antireflective coating in the present embodiment has trilamellar membrane structure, wherein, the first silicon oxynitride film 3a has anti-PID performance, the
One silicon nitride gradual change film layer 1a has reduction reflectivity effect, and the first silicon nitride film layer 2a directly contacts the first silicon oxynitride film
3a, help to lift anti-PID performance and reduce the effect of reflectivity.
Preferably, the first silicon oxynitride film 3a meets following Parameter Conditions：
Wherein, the first silicon oxynitride film 3a thickness is arranged to 1~5nm, such as：1nm, 2nm, 3nm, 4nm, 5nm etc.
Deng the effect that anti-PID performance can be optimal in this thickness range.
Wherein, the first silicon oxynitride film 3a refractive index is arranged to 1.5~1.9, such as：1.5、1.6、1.7、1.8、
1.9 etc..
Wherein, used special gas bag includes silane, ammonia when the first silicon oxynitride film 3a carries out plated film using PECAD techniques
Gas and laughing gas, the flow proportional of silane, ammonia and laughing gas three are arranged to 1:10:5~1:20:10.Wherein, silane, ammonia and
The flow proportional of laughing gas three is preferably 1:15:8.
Preferably, the first silicon nitride film layer 2a meets following Parameter Conditions：
Wherein, the first silicon nitride film layer 2a thickness is arranged to 10~30nm, such as：10nm、15nm、20nm、25nm、30nm
Etc..
Wherein, the first silicon nitride film layer 2a refractive index is arranged to 2.15~2.35, such as：2.15、2.20、2.25、
2.30th, 2.35 etc..
Wherein, used special gas bag includes silane and ammonia when the first silicon nitride film layer 2a carries out plated film using PECAD techniques
Gas, the flow proportional of silane and both ammonias are arranged to 1:3~1:5.Wherein, the flow proportional of silane and both ammonias is preferably
1:4。
Preferably, the first silicon nitride gradual change film layer 1a meets following Parameter Conditions：
Wherein, the first silicon nitride gradual change film layer 1a thickness is arranged to 50~75nm, such as：50nm、60nm、70nm、
75nm etc..
Wherein, the first silicon nitride gradual change film layer 1a gradually changed refractive index scope 1.6~2.10, that is to say, that the present embodiment
In the first silicon nitride gradual change film layer 1a refractive index be in the graded profile without obvious boundary in 1.6~2.10 number range.
Preferably, the gradually changed refractive index minimum interval in the present embodiment is 0.001, i.e. the first silicon nitride gradual change film layer 1a
Gradually changed refractive index scope be：1.601、1.602、1.603……、2.098、2.099、2.10.
Certainly, the gradually changed refractive index interval in the present embodiment can also control (is less than in common process for other numerical value
0.02), such as：Gradually changed refractive index minimum interval is 0.002,0.003,0.004,0.005 ... 0.198,0.199 etc..
Wherein, the first silicon nitride gradual change film layer 1a using PECAD techniques carry out plated film when used special gas bag include silane,
Ammonia and laughing gas, by control the flow-rate ratio parameter of special gas with formed refractive index can ramp control the first silicon nitride gradual change film layer
1a, wherein, the flow proportional of silane, ammonia and laughing gas three is arranged to 1:10:8~1:20:15, wherein, silane, ammonia and laugh at
The flow proportional of gas three is preferably 1:15:10.Reaction time (slope time) 50~400s of control range, the time is preferably
200s。
Make it possible to the ability of slop control ammonia, silane and laughing gas, i.e. ammonia, silane in the present embodiment using PECVD
Timing, quantitative increase or can reduce with laughing gas, reach refractive index can ramp control ability, gradually changed refractive index minimum interval is
0.001, common process gradually changed refractive index interval is 0.02, such as：First silicon nitride gradual change film layer 1a can be formed one from it is lower to
Upper refractive index reduces successively and the gradual change film layer without obvious boundary.
61~110nm of overall thickness control range of antireflective coating in the present embodiment.Preferably 85nm.Wherein, overall folding
Rate control is penetrated in 2.0~2.15, preferably 2.06.
The antireflective coating is by the first silicon oxynitride film 3a, the first silicon nitride film layer 2a and the first silicon nitride gradual change film layer 1a
The membrane structure of lamination shape is formed, reduces the reflection of light, so as to realize the purpose for reducing reflectivity；Also there is anti-PID simultaneously
Performance.
Embodiment three
With reference to shown in Fig. 2, the present embodiment three is on the basis of embodiment one, there is provided a kind of further technical side
Case.
The antireflective coating includes the second silicon nitride film layer 2b, the second silicon nitride gradual change film layer 1b and the second silicon oxynitride film
3b；Second silicon nitride gradual change film layer 1b is deposited on the second silicon nitride film layer 2b, and the second silicon oxynitride film 3b is deposited on
On phenodiazine SiClx graded films layer 1b.Certainly, the second silicon nitride film layer 2b is in plated film, can also correspond to be deposited on silicon chip 4 it
On.Antireflective coating in the present embodiment has trilamellar membrane structure, wherein, the second silicon oxynitride film 3b has anti-PID performance,
Second silicon nitride gradual change film layer 1b has reduction reflectivity effect, and the second silicon nitride film layer 2b directly contacts silicon chip 4, contributed to
Lift anti-PID performance and reduce the effect of reflectivity.
Preferably, the second silicon nitride film layer 2b meets following Parameter Conditions：
Wherein, the second silicon nitride film layer 2b thickness is arranged to 8~30nm, such as：8nm, 16nm, 24nm, 30nm etc..
Wherein, the second silicon nitride film layer 2b refractive index is arranged to 2.15~2.35, such as：2.15、2.20、2.25、
2.30th, 2.35 etc..
Wherein, used special gas bag includes silane and ammonia when the second silicon nitride film layer 2b carries out plated film using PECAD techniques
Gas, the flow proportional of silane and both ammonias are arranged to 1:3~1:6.Wherein, the flow proportional of silane and both ammonias is preferably
1:4。
Preferably, the second silicon nitride gradual change film layer 1b meets following Parameter Conditions：
Wherein, the second silicon nitride gradual change film layer 1b thickness control 60~75nm of scope, such as：60nm、65nm、70nm、
75nm etc..
Wherein, the second silicon nitride gradual change film layer 1b gradually changed refractive index scope 1.8~2.10, that is to say, that the present embodiment
In the second silicon nitride gradual change film layer 1b refractive index be in the graded profile without obvious boundary in 1.8~2.10 number range.
Preferably, the gradually changed refractive index minimum interval in the present embodiment is 0.001, i.e. the second silicon nitride gradual change film layer 1b
Gradually changed refractive index scope be：1.801、1.802、1.803……、2.098、2.099、2.10.
Certainly, the gradually changed refractive index interval in the present embodiment can also control (is less than in common process for other numerical value
0.02), such as：Gradually changed refractive index minimum interval is 0.002,0.003,0.004,0.005 ... 0.198,0.199 etc..
Wherein, the second silicon nitride gradual change film layer 1b using PECAD techniques carry out plated film when used special gas bag include silane,
Ammonia and laughing gas, by control the flow-rate ratio parameter of special gas with formed refractive index can ramp control the second silicon nitride gradual change film layer
1b, wherein, the flow proportional of silane, ammonia and laughing gas three is arranged to 1:10:8~1:16:12, wherein, silane, ammonia and laugh at
The flow proportional of gas three is preferably 1:12:10, reaction time (slope time) 50~200s of control range, preferably 150s.
Make it possible to the ability of slop control ammonia, silane and laughing gas, i.e. ammonia, silane in the present embodiment using PECVD
Timing, quantitative increase or can reduce with laughing gas, reach refractive index can ramp control ability, gradually changed refractive index minimum interval is
0.001, common process gradually changed refractive index interval is 0.02, such as：Second silicon nitride gradual change film layer 1b can be formed one from it is lower to
Upper refractive index reduces successively and the gradual change film layer without obvious boundary.
Preferably, the second silicon oxynitride film 3b meets following Parameter Conditions：
Wherein, the second silicon oxynitride film 3b thickness is arranged to 2~8nm, such as：2nm, 4nm, 6nm, 8nm etc..
Wherein, the second silicon oxynitride film 3b refractive index is arranged to 1.5~1.8, such as：1.5th, 1.6,1.7,1.8 etc.
Deng.
Wherein, used special gas bag includes silane, ammonia when the second silicon oxynitride film 3b carries out plated film using PECAD techniques
Gas and laughing gas, the flow proportional of silane, ammonia and laughing gas three are arranged to 1:8:5~1:12:10.Wherein, silane, ammonia and laugh at
The flow proportional of gas three is preferably 1:10:6.
70~113nm of overall thickness control range of antireflective coating in the present embodiment.Preferably 85nm.Wherein, overall folding
Rate control is penetrated in 2.0~2.15, preferably 2.08.
The antireflective coating is by the second silicon nitride film layer 2b, the second silicon nitride gradual change film layer 1b, the second silicon oxynitride film 3b
The membrane structure of lamination shape is formed, reduces the reflection of light, so as to realize the purpose for reducing reflectivity；Also there is anti-PID simultaneously
Performance.
Example IV
With reference to shown in Fig. 3, the present embodiment four is on the basis of embodiment one, there is provided a kind of further technical side
Case.
The antireflective coating includes the 3rd silicon nitride gradual change film layer 1c and the 3rd silicon oxynitride film 3c；3rd silicon oxynitride film
Layer 3c is deposited on the 3rd silicon nitride gradual change film layer 1c.Certainly, the 3rd silicon nitride gradual change film layer 1c can also correspond in plated film
It is deposited on silicon chip 4.Antireflective coating in the present embodiment has two film structures, wherein, the 3rd silicon oxynitride film 3c
Performance with anti-PID, the 3rd silicon nitride gradual change film layer 1c have reduction reflectivity effect.
Preferably, the 3rd silicon nitride gradual change film layer 1c meets following Parameter Conditions：
Wherein, the 3rd silicon nitride gradual change film layer 1c thickness is arranged to 70~85nm, such as：70nm、75nm、80nm、
85nm etc..
Wherein, the 3rd silicon nitride gradual change film layer 1c gradually changed refractive index scope 1.8~2.35, that is to say, that the present embodiment
In the 3rd silicon nitride gradual change film layer 1c refractive index be in the graded profile without obvious boundary in 1.8~2.35 number range.
Preferably, the gradually changed refractive index minimum interval in the present embodiment is 0.001, i.e. the 3rd silicon nitride gradual change film layer 1c
Gradually changed refractive index scope be：1.801、1.802、1.803……、2.348、2.349、2.35.
Certainly, the gradually changed refractive index interval in the present embodiment can also control (is less than in common process for other numerical value
0.02), such as：Gradually changed refractive index minimum interval is 0.002,0.003,0.004,0.005 ... 0.198,0.199 etc..
Wherein, the 3rd silicon nitride gradual change film layer 1c using PECAD techniques carry out plated film when used special gas bag include silane,
Ammonia and laughing gas, by controlling the flow-rate ratio parameter of special gas, with formed refractive index can ramp control the 3rd silicon nitride graded films
Layer 1c, wherein, the flow proportional of silane, ammonia and laughing gas three is arranged to 1:4:5~1:16:20, wherein, silane, ammonia and
The flow proportional of laughing gas three is preferably 1:8:10.Reaction time (slope time) 200~600s of control range, it is preferably
400s。
Make it possible to the ability of slop control ammonia, silane and laughing gas, i.e. ammonia, silane in the present embodiment using PECVD
Timing, quantitative increase or can reduce with laughing gas, reach refractive index can ramp control ability, gradually changed refractive index minimum interval is
0.001, common process gradually changed refractive index interval is 0.02, such as：3rd silicon nitride gradual change film layer 1c can be formed one from it is lower to
Upper refractive index reduces successively and the gradual change film layer without obvious boundary.
Preferably, the 3rd silicon oxynitride film 3c meets following Parameter Conditions：
Wherein, the 3rd silicon oxynitride film 3c thickness is arranged to 2~8nm, such as：2nm、3nm、4nm、5nm、6nm、
7nm, 8nm etc..
Wherein, the 3rd silicon oxynitride film 3c refractive index is arranged to 1.5~1.8, such as：1.5th, 1.6,1.7,1.8 etc.
Deng.
Wherein, used special gas bag includes silane, ammonia when the 3rd silicon oxynitride film 3c carries out plated film using PECAD techniques
Gas and laughing gas, the flow proportional of silane, ammonia and laughing gas three are arranged to 1:12:10~1:20:18, wherein, silane, ammonia and
The flow proportional of laughing gas three is preferably 1:15:12.
72~93nm of overall thickness control range of antireflective coating in the present embodiment.Preferably 85nm.Wherein, overall refraction
Rate is controlled in 2.0~2.15, preferably 2.07.
The antireflective coating forms the 3rd silicon nitride gradual change film layer 1c, the 3rd silicon oxynitride film 3c the film knot of lamination shape
Structure, reduce the reflection of light, so as to realize the purpose for reducing reflectivity；Also there is anti-PID performance simultaneously.
Embodiment five
With reference to shown in Fig. 1 to Fig. 3, the present embodiment five provides a kind of polycrystalline silicon solar cell, and it includes embodiment one to reality
Apply the antireflective coating any one of example four.It is understood that the polycrystalline silicon solar cell in the present embodiment five is using upper
The antireflective coating stated in each embodiment is made.Had described in detail above for the concrete structure of antireflective coating, herein no longer
Repeat.
Following table is with the polysilicon sun made of embodiment two, embodiment three, example IV these three concrete technical schemes
The unit for electrical property parameters of battery.
| Classification | EFF | Uoc | Isc | FF | Rs | Rsh |
| Contrast groups | 18.83% | 636.2 | 9.057 | 80.28 | 1.60 | 233 |
| Embodiment two | 18.93% | 636.7 | 9.116 | 80.12 | 1.73 | 484 |
| Embodiment three | 18.95% | 637.1 | 9.110 | 80.22 | 1.67 | 581 |
| Example IV | 18.93% | 636.2 | 9.121 | 80.12 | 1.71 | 328 |
Wherein, EFF is photoelectric transformation efficiency, and Uoc is open-circuit voltage, and Isc is short circuit current, and FF is fill factor, curve factor, and Rs is
Series resistance, Rsh are parallel resistance.From the unit for electrical property parameters of test gained：
Embodiment two：For contrast groups, photoelectric transformation efficiency lifting 0.10%, unit for electrical property parameters is mainly reflected in
Uoc lifts 0.5mV, Isc liftings 59mA.
Embodiment three：For contrast groups, photoelectric transformation efficiency lifting 0.12%, unit for electrical property parameters is mainly reflected in
Uoc lifts 0.9mV, Isc liftings 53mA.
Example IV：For contrast groups, photoelectric transformation efficiency lifting 0.10%, unit for electrical property parameters is mainly reflected in
Isc lifts 64mA.
What deserves to be explained is solar cell used in above-mentioned contrast groups is made of traditional antireflective coating, the tradition
Antireflective coating use 3 layers of silicon nitride film Rotating fields, every layer of silicon nitride film layer structured refractive rate is fixed, and bottom refractive index is generally selected
Some value more than or equal to 2.18 is taken, intermediate refractive index layer generally chooses some value more than or equal to 2.05, outermost layer refractive index
For 2.0.By contrast, the performance that embodiment two, embodiment three and example IV are embodied is superior to contrast groups.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than its limitations；To the greatest extent
The present invention is described in detail with reference to foregoing embodiments for pipe, it will be understood by those within the art that：Its according to
The technical scheme described in foregoing embodiments can so be modified, either which part or all technical characteristic are entered
Row equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from various embodiments of the present invention technology
The scope of scheme.
Claims (13)
1. a kind of antireflective coating, it is characterised in that including at least silicon oxynitride film and silicon nitride gradual change film layer, the nitrogen oxidation
The membrane structure of lamination shape is formed between silicon film and silicon nitride gradual change film layer.
2. antireflective coating according to claim 1, it is characterised in that including the first silicon oxynitride film, the first silicon nitride
Film layer and the first silicon nitride gradual change film layer；First silicon nitride film layer is deposited on first silicon oxynitride film, institute
The first silicon nitride gradual change film layer is stated to be deposited on first silicon nitride film layer.
3. antireflective coating according to claim 2, it is characterised in that first silicon oxynitride film meets following parameter
Condition：
The thickness of first silicon oxynitride film is arranged to 1~5nm；
The refractive index of first silicon oxynitride film is arranged to 1.5~1.9；
Used special gas bag includes silane, ammonia and laughed at when first silicon oxynitride film carries out plated film using PECAD techniques
Gas, the flow proportional of the silane, ammonia and laughing gas three are arranged to 1:10:5~1:20:10.
4. antireflective coating according to claim 2, it is characterised in that first silicon nitride film layer meets following parameter bar
Part：
The first silicon nitride film layer thickness is arranged to 10~30nm；
The refractive index of first silicon nitride film layer is arranged to 2.15~2.35；
Used special gas bag includes silane and ammonia when first silicon nitride film layer carries out plated film using PECAD techniques, described
The flow proportional of silane and both ammonias is arranged to 1:3~1:5.
5. antireflective coating according to claim 2, it is characterised in that the first silicon nitride gradual change film layer meets following ginseng
Said conditions：
The thickness of the first silicon nitride gradual change film layer is arranged to 50~75nm；
The gradually changed refractive index scope 1.6~2.10 of the first silicon nitride gradual change film layer；
The first silicon nitride gradual change film layer using PECAD techniques carry out plated film when used special gas bag include silane, ammonia and
Laughing gas, by control the flow-rate ratio parameter of special gas with formed refractive index can ramp control the first silicon nitride gradual change film layer,
Wherein, the flow proportional of the silane, ammonia and laughing gas three is arranged to 1:10:8~1:20:15, reaction time control range
50~400s.
6. antireflective coating according to claim 1, it is characterised in that including the second silicon nitride film layer, the second silicon nitride gradually
Become film layer and the second silicon oxynitride film；The second silicon nitride gradual change film layer is deposited on second silicon nitride film layer,
Second silicon oxynitride film is deposited on the second silicon nitride gradual change film layer.
7. antireflective coating according to claim 6, it is characterised in that second silicon nitride film layer meets following parameter bar
Part：
The thickness of second silicon nitride film layer is arranged to 8~30nm；
The refractive index of second silicon nitride film layer is arranged to 2.15~2.35；
Used special gas bag includes silane and ammonia when second silicon nitride film layer carries out plated film using PECAD techniques, described
The flow proportional of silane and both ammonias is arranged to 1:3~1:6.
8. antireflective coating according to claim 6, it is characterised in that the second silicon nitride gradual change film layer meets following ginseng
Said conditions：
60~75nm of thickness control scope of the second silicon nitride gradual change film layer；
The gradually changed refractive index scope 1.8~2.10 of the second silicon nitride gradual change film layer；
The second silicon nitride gradual change film layer using PECAD techniques carry out plated film when used special gas bag include silane, ammonia and
Laughing gas, by control the flow-rate ratio parameter of special gas with formed refractive index can ramp control the second silicon nitride gradual change film layer,
Wherein, the flow proportional of the silane, ammonia and laughing gas three is arranged to 1:10:8~1:16:12, reaction time control range
50~200s.
9. antireflective coating according to claim 6, it is characterised in that second silicon oxynitride film meets following parameter
Condition：
The thickness of second silicon oxynitride film is arranged to 2~8nm；
The refractive index of second silicon oxynitride film is arranged to 1.5~1.8；
Used special gas bag includes silane, ammonia and laughed at when second silicon oxynitride film carries out plated film using PECAD techniques
Gas, the flow proportional of the silane, ammonia and laughing gas three are arranged to 1:8:5~1:12:10.
10. antireflective coating according to claim 1, it is characterised in that including the 3rd silicon nitride gradual change film layer and the 3rd nitrogen
Membranous layer of silicon oxide；3rd silicon oxynitride film is deposited on the 3rd silicon nitride gradual change film layer.
11. antireflective coating according to claim 10, it is characterised in that the 3rd silicon nitride gradual change film layer meets as follows
Parameter Conditions：
The thickness of the 3rd silicon nitride gradual change film layer is arranged to 70~85nm；
The gradually changed refractive index scope 1.8~2.35 of the 3rd silicon nitride gradual change film layer；
The 3rd silicon nitride gradual change film layer using PECAD techniques carry out plated film when used special gas bag include silane, ammonia and
Laughing gas, by controlling the flow-rate ratio parameter of special gas, with formed refractive index can ramp control the 3rd silicon nitride gradual change film layer,
Wherein, the flow proportional of the silane, ammonia and laughing gas three is arranged to 1:4:5~1:16:20, reaction time control range
200~600s.
12. antireflective coating according to claim 10, it is characterised in that the 3rd silicon oxynitride film meets following ginseng
Said conditions：
The thickness of 3rd silicon oxynitride film is arranged to 2~8nm；
The refractive index of 3rd silicon oxynitride film is arranged to 1.5~1.8；
Used special gas bag includes silane, ammonia and laughed at when 3rd silicon oxynitride film carries out plated film using PECAD techniques
Gas, the flow proportional of the silane, ammonia and laughing gas three are arranged to 1:12:10~1:20:18.
13. a kind of polycrystalline silicon solar cell, it is characterised in that including the antireflective as any one of claim 1-12
Film.
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| CN109037360A (en) * | 2018-08-09 | 2018-12-18 | 润峰电力有限公司 | A kind of solar cell inactivating antireflective film and its coating process |
| CN109696759A (en) * | 2018-12-29 | 2019-04-30 | 武汉华星光电技术有限公司 | High-penetration liquid crystal display panel preparation method and its display panel |
| CN111416022A (en) * | 2020-04-09 | 2020-07-14 | 浙江爱旭太阳能科技有限公司 | Preparation method for preparing black component solar cell positive film |
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