CN113981415B - Method and device for determining abnormal operation of flowmeter of tubular PECVD system - Google Patents
Method and device for determining abnormal operation of flowmeter of tubular PECVD system Download PDFInfo
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 88
- 230000002159 abnormal effect Effects 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000001514 detection method Methods 0.000 claims abstract description 65
- 239000007789 gas Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 319
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 74
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 65
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 45
- 229910000077 silane Inorganic materials 0.000 claims description 45
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 41
- 235000013842 nitrous oxide Nutrition 0.000 claims description 34
- 229910021529 ammonia Inorganic materials 0.000 claims description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 238000012360 testing method Methods 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000011835 investigation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000001272 nitrous oxide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008072 Si-N-Si Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method and a device for determining abnormal operation of a flowmeter of a tubular PECVD system, wherein the tubular PECVD system comprises a plurality of flowmeters respectively used for controlling different gases or liquids, and the method comprises the following steps: acquiring detection physical parameters of a target film, wherein the target film is deposited when a flowmeter of a tubular PECVD system operates abnormally; acquiring actual operation parameters of a tubular PECVD system corresponding to a target film; the abnormal working flowmeter can be determined based on the type of the target film, the detected physical parameters, the actual operation parameters, the standard physical parameters corresponding to the target film and the standard operation parameters of the tubular PECVD system corresponding to the target film, and the flowmeter is quick, convenient and wide in application range.
Description
Technical Field
The invention relates to the field of crystalline silicon solar cell production, in particular to a method and a device for determining abnormal operation of a flowmeter of a tubular PECVD system.
Background
In order to improve the efficiency of the crystalline silicon solar cell, it is generally required to reduce the light reflection on the light receiving surface of the crystalline silicon solar cell, and at present, the light reflectivity on the light receiving surface of the crystalline silicon solar cell is generally reduced by adopting a passivation treatment method for the surface of the crystalline silicon. Specifically, siNx films are prepared on the surface of crystalline silicon so as to reduce the reflection of visible light on the surface of the crystalline silicon solar cell and play a role in surface passivation. There are various methods for preparing SiNx films, and currently, PECVD (Plasma Enhanced Chemical Vapor Deposition ) is commonly used in the solar cell industry.
The most commonly used tubular PECVD system for PECVD uses a quartz tube as a deposition chamber, a resistance furnace as a heating body, a graphite boat as a carrier for holding silicon wafers for vapor deposition, and gas/liquid flow meters such as laughing gas, ammonia gas, silane, TMA (trimethylaluminum) and the like for monitoring the deposition. When the abnormality occurs in the deposition process, it is difficult to determine which flowmeter is abnormal, and the time consumption is long for one-by-one investigation, so that the production capacity is greatly affected.
Disclosure of Invention
The invention aims at: the method and the device for determining the abnormal operation of the flowmeter of the tubular PECVD system can be used for rapidly locking the abnormal flowmeter and reducing the production stoppage checking time.
The technical scheme of the invention is as follows: in a first aspect, the present invention provides a method for determining abnormal operation of a flow meter of a tube-type PECVD system including a plurality of flow meters for controlling different gases or liquids, respectively, the method comprising:
acquiring detection physical parameters of a target film, wherein the target film is deposited when a flowmeter of the tubular PECVD system operates abnormally;
acquiring actual operation parameters of the tubular PECVD system corresponding to the target film;
and determining the flow meter which works abnormally based on the type of the target film, the detected physical parameter, the actual operation parameter, the standard physical parameter corresponding to the target film and the standard operation parameter of the tubular PECVD system corresponding to the target film.
In a preferred embodiment, before the acquiring the detected physical parameter of the target film, the method further includes:
and if the color of the film deposited by the tubular PECVD system is abnormal, determining the film deposited by the tubular PECVD system as the target film.
In a preferred embodiment, the acquiring the detected physical parameter of the target film includes:
testing the target film by adopting an ellipsometer to obtain a test physical parameter;
and if the test physical parameter is different from the standard physical parameter, taking the test physical parameter as the detection physical parameter of the target film.
In a preferred embodiment, the detecting physical parameter includes at least one of detecting film thickness and detecting film refractive index, and the standard physical parameter includes at least one of standard film thickness and standard film refractive index;
the actual operating parameter includes at least one of an actual radio frequency voltage and an actual radio frequency current, and the standard operating parameter includes at least one of a standard radio frequency voltage and a standard radio frequency current.
In a preferred embodiment, the flow meters of the tubular PECVD system include a silane flow meter, an ammonia flow meter, a TMA flow meter, and a laughing gas flow meter, and at least one flow meter of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter is determined to operate abnormally based on the type of the target film, the detected physical parameter, the actual operating parameter, the standard physical parameter corresponding to the target film, and the standard operating parameter of the tubular PECVD system corresponding to the target film.
In a preferred embodiment, the target film is a silicon nitride film, and determining that at least one of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter is abnormally operated based on a type of the target film, the detected physical parameter, the actual operation parameter, a standard physical parameter corresponding to the target film, and a standard operation parameter of the tubular PECVD system corresponding to the target film includes:
if the thickness of the detection film layer of the silicon nitride film is larger than the thickness of the standard film layer, the refractive index of the detection film layer is larger than the refractive index of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the silane flowmeter floats;
if the thickness of the detection film layer of the silicon nitride film is larger than the thickness of the standard film layer, the refractive index of the detection film layer is smaller than the refractive index of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the ammonia flow meter floats;
if the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the refractive index of the detection film layer is smaller than the refractive index of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the silane flowmeter floats down;
if the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the refractive index of the detection film layer is larger than the refractive index of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the ammonia flow meter floats down.
In a preferred embodiment, the target film is an alumina film, and determining that at least one of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter is abnormally operated based on a type of the target film, the detected physical parameter, the actual operation parameter, a standard physical parameter corresponding to the target film, and a standard operation parameter of the tubular PECVD system corresponding to the target film includes:
if the thickness of the detection film layer of the alumina film is smaller than the standard film layer thickness, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the TMA flowmeter floats down;
if the thickness of the detection film layer of the alumina film is larger than the standard film layer thickness, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the TMA flowmeter floats;
if the thickness of the detection film layer of the alumina film is larger than the thickness of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the laughing gas flowmeter floats;
if the thickness of the detection film layer of the alumina film is smaller than the thickness of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the laughing gas flowmeter floats down.
In a preferred embodiment, the determining that at least one of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter is abnormally operated based on the type of the target thin film, the detected physical parameter, the actual operation parameter, the standard physical parameter corresponding to the target thin film, and the standard operation parameter of the tubular PECVD system corresponding to the target thin film includes:
calculating a first difference value between the thickness of the detection film layer and the thickness of the standard film layer of the target film, a second difference value between the refractive index of the detection film layer and the refractive index of the standard film layer, a third difference value between the actual radio frequency voltage and the standard radio frequency voltage, and a fourth difference value between the actual radio frequency current and the standard radio frequency current;
and determining that at least one flowmeter of the silane flowmeter, the ammonia flowmeter, the TMA flowmeter and the laughing gas flowmeter works abnormally based on the magnitudes of at least three of the first difference value, the second difference value, the third difference value and the fourth difference value and the type of the target film.
In a second aspect, the present invention provides a device for determining abnormal operation of a flow meter of a tubular PECVD system, comprising:
a memory storing a computer program; and
a processor operable to execute the computer program stored on the memory to implement the method of any one of claims 1-8.
In a preferred embodiment, the apparatus further comprises: ellipsometer for testing physical parameters of the target film.
The technical scheme provided by the invention at least comprises the following beneficial effects:
according to the method for determining the abnormal operation of the flowmeter of the tubular PECVD system, provided by the invention, the abnormal operation flowmeter can be determined by acquiring the detection physical parameters of the target film and the actual operation parameters of the tubular PECVD system corresponding to the target film and based on the type of the target film, the detection physical parameters, the actual operation parameters, the standard physical parameters corresponding to the target film and the standard operation parameters of the tubular PECVD system corresponding to the target film, the flowmeter does not need to be checked one by one, the method is quick and convenient, the application range is wider, the method is applicable to gas flowmeters and liquid flowmeters, and the production capacity is not influenced.
Drawings
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly introduced below, it will be obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art:
FIG. 1 is a flow chart of a method for determining abnormal operation of a flow meter of a pipe PECVD system according to embodiment 1 of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As described in the background art, in the production of the tubular PECVD, a gas or liquid flowmeter such as laughing gas, ammonia gas, silane, TMA and the like is required to monitor the deposition condition, when the flowmeter is abnormal, a producer is difficult to judge which flowmeter is abnormal, only the production can be stopped and checked one by one, the time is long, and the long-time production stopping and checking seriously affects the productivity of the deposition production.
At present, in the calibration of the flow meter, a method for performing serial calibration on other special gas flow meters by adopting a nitrogen flow meter is adopted, compared with a commonly used production stopping one-by-one investigation method, the investigation speed is improved, but the method has extremely high accuracy requirements on the existing nitrogen flow meter on equipment because the nitrogen flow meter is adopted for calibration, once the nitrogen flow meter deviates, the investigation result of the flow meter is wrong, and the accuracy of the nitrogen flow meter is difficult to be ensured at any time by the prior art. In addition, the method needs to respectively introduce nitrogen into the nitrogen flowmeter and the flowmeter to be calibrated to compare the pressure change in the cavity of the nitrogen flowmeter and the flowmeter to be calibrated under the condition of introducing the same flow, then calculates and compares the pressure change value of the nitrogen flowmeter and the flowmeter to be calibrated, only can calibrate the gas flowmeter, and can not judge the liquid flowmeter to be introduced with TMA, so that the method is more limited. In summary, the method not only requires that the nitrogen flow meter must be accurate and cannot calibrate the liquid flow meter, but also has relatively complicated ventilation operation on the machine, and cannot simply, rapidly and comprehensively determine the flow meter of the abnormal operation of the tubular PECVD system.
In order to solve the above problems, an embodiment of the present invention provides a method for determining abnormal operation of a flow meter of a tube type PECVD system, wherein the tube type PECVD system includes a plurality of flow meters for controlling different gases or liquids, respectively, as shown in fig. 1, the method includes:
s1, acquiring detection physical parameters of a target film, wherein the target film is deposited when a flowmeter of a tubular PECVD system operates abnormally.
In one embodiment, the abnormality determination is performed before this step, specifically, if the color of the film deposited by the tube-type PECVD system is abnormal, determining the film deposited by the tube-type PECVD system as the target film.
Namely, when the color of the film deposited by the tubular PECVD system is abnormal, in other words, the color of the film is different from the standard color, the physical parameters of the film currently deposited by the tubular PECVD system are detected to obtain the detected physical parameters.
Specifically, detecting the physical parameter includes detecting at least one of a thickness of the film layer and a refractive index of the film layer.
Because a certain error rate exists for judging whether the flowmeter of the tubular PECVD system works abnormally according to the chromatic aberration, the physical parameters of the film deposited by the current tubular PECVD system are combined to confirm whether the flowmeter of the current tubular PECVD system works abnormally.
Preferably, the step S1 of acquiring the detected physical parameter of the target thin film includes:
s11, testing the target film by adopting an ellipsometer to obtain the physical parameters.
Specifically, an ellipsometer is used to test at least one of the film thickness and the film refractive index of the target film.
And S12, if the test physical parameter is different from the standard physical parameter, taking the test physical parameter as the detection physical parameter of the target film.
And comparing the film thickness and the film refractive index of the film deposited by the current tubular PECVD according to the ellipsometer test with the standard film thickness and the standard film refractive index corresponding to the target film to determine whether the flowmeter of the current tubular PECVD system works abnormally or not. The standard film thickness and the standard film refractive index are respectively the film thickness and the film refractive index of the current type of film deposited when the current tubular PECVD system normally operates. When the flow rate of gas or liquid in the laughing gas flow meter, the ammonia flow meter, the silane flow meter and the TMA flow meter is changed, the thickness and the refractive index of the prepared film are correspondingly changed, so that if the film thickness and the film refractive index of the target film to be detected currently are consistent with the film thickness and the film refractive index of the film deposited when the flow meter of the tubular PECVD system works normally, the flow meter is not abnormal, and if the film thickness and the refractive index of the target film to be detected currently are inconsistent with the film thickness and the film refractive index of the film deposited when the tubular PECVD system works normally, the flow meter is abnormal in the tubular PECVD system.
For example, if the film is a silicon nitride film, when a chromatic aberration abnormality occurs on site, testing the silicon nitride film deposited by the current tubular PECVD system by using an ellipsometer to obtain detection physical parameters, wherein the detection physical parameters comprise a detection film layer thickness of 85nm and a detection film layer refractive index of 2.15, the standard physical parameters corresponding to the silicon nitride film comprise a standard film layer thickness of 82nm and a standard film layer refractive index of 2.08, calculating a difference value between the detection physical parameters and the film layer thickness in the standard physical parameters to be 3nm, and determining that the film deposited by the current tubular PECVD system is abnormal and the flowmeter has abnormal operation.
S2, acquiring actual operation parameters of the tubular PECVD system corresponding to the target film.
The actual operating parameter includes at least one of an actual radio frequency voltage and an actual radio frequency current.
For example, the actual operation parameters of the tubular PECVD system corresponding to the target film are obtained, the target film is a silicon nitride film, the actual rf voltage is 360V, and the actual rf current is 18.06A.
S3, determining the flow meter with abnormal operation based on the type of the target film, the detected physical parameters, the actual operation parameters, the standard physical parameters corresponding to the target film and the standard operation parameters of the tubular PECVD system corresponding to the target film.
The standard physical parameters are physical parameters of the deposited film when the flowmeter of the tubular PECVD system works normally, and the standard operating parameters of the tubular PECVD system corresponding to the target film are operating parameters when the flowmeter of the tubular PECVD system works normally. Specifically, the standard physical parameter includes at least one of a standard film thickness and a standard film refractive index, and the standard operating parameter includes at least one of a standard radio frequency voltage and a standard radio frequency current. Preferably, the standard operation parameters corresponding to the currently deposited target film are obtained from the prestored historical operation record of the tubular PECVD system. Specifically, a historical operating record of the tubular PECVD system is stored in a database, and historical deposited film standard physical parameters associated with the historical operating record are stored in the database in an associated manner, so that the associated historical operating record is called under the condition that the historical deposited film standard physical parameters are known.
Exemplary standard film parameters for silicon nitride films include: the standard film thickness is 82nm, the standard film refractive index is 2.08, the corresponding standard operation record is that the radio frequency voltage record is 340V, and the radio frequency current record is 19.10A.
Tube PECVD systems typically use silane flow meters and ammonia flow meters when depositing silicon nitride films, and the silane is deficient during normal film plating, siH 3 Atomic groups are firstly attached to the surface of the substrate, and Si-Si bonds on the surface of the film are bombarded by excessive N in an excited state to form Si-N-Si bonds so as to form a SiN film, so that the larger the amount of silane is, the SiH attached to the surface of the substrate silicon wafer 3 The more atomic groups, the greater the thickness of the silicon nitride film formed. With the increase of the ammonia flow, the number of N atoms in the reaction gasThe increase of the Si-N bonds in the thin film increases the N content in the thin film, and the refractive index of the thin film is reduced. In addition, the ion mass of the ionized silane is larger than that of the ionized ammonia, so that the ion movement of the ionized silane is relatively slow, the radio frequency current is relatively low, and the radio frequency voltage is larger after the radio frequency current is lower because the radio frequency power is constant. In conclusion, by combining the film thickness, refractive index, radio frequency voltage and radio frequency current of the silicon nitride film, the specific gas meter can be qualitatively judged to be abnormal.
Similarly, when depositing aluminum oxide films, tubular PECVD systems typically use a laughing gas (nitrous oxide) flowmeter and a TMA (trimethylaluminum) flowmeter, where the trimethylaluminum and the nitrous oxide are mixed and react to form aluminum oxide through plasma excitation, TMA is insufficient during normal film plating, and the larger the TMA amount, the more the aluminum oxide generated through the reaction is represented by a larger film thickness, and the ion mass of the ionized TMA is larger than that of the laughing gas, so that the ion movement of the ionized TMA is relatively slow, the radio frequency current is relatively low, and the radio frequency voltage appears to be larger after the radio frequency current is low due to the fact that the radio frequency power is constant. In conclusion, by combining the film thickness, the radio frequency voltage and the radio frequency current of the alumina film, which specific air flow meter works abnormally can be judged.
Specifically, the flow meters of the tubular PECVD system comprise a silane flow meter, an ammonia flow meter, a TMA flow meter and a laughing gas flow meter, and at least one flow meter of the silane flow meter, the ammonia flow meter, the TMA flow meter and the laughing gas flow meter is determined to work abnormally based on the type of the target film, the actual detection physical parameters, the actual operation parameters, the standard physical parameters corresponding to the target film and the standard operation parameters of the tubular PECVD system corresponding to the target film.
In one embodiment, when the film deposited by the tube PECVD system is a silicon nitride film, the target film is a silicon nitride film, and step S3 specifically includes:
if the thickness of the detection film layer of the silicon nitride film is larger than the thickness of the standard film layer, the refractive index of the detection film layer is larger than the refractive index of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining the drift height of the silane flowmeter.
If the thickness of the detection film layer of the silicon nitride film is larger than the thickness of the standard film layer, the refractive index of the detection film layer is smaller than the refractive index of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining the drift height of the ammonia flow meter;
if the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the refractive index of the detection film layer is smaller than the refractive index of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the silane flowmeter is low;
if the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the refractive index of the detection film layer is larger than the refractive index of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the ammonia flow meter is low.
The standard film thickness of the silicon nitride film can be 82nm, and the refractive index of the standard film can be 2.08. The ammonia gas and the silane gas are deposited by PECVD technology to form a silicon nitride film, and the high flow rates of the ammonia gas and the silane gas can cause the thickness of the silicon nitride film to be increased. The smaller the ratio of N to Si, the higher the amount of silane, which corresponds to the higher the thickness and refractive index of the silicon nitride film, the higher the radio frequency voltage (the lower the radio frequency current). Based on the above, if the thickness of the detection film layer of the silicon nitride film is greater than the standard film layer thickness, it indicates that the flow of the silane flowmeter or the ammonia flowmeter floats, the actual radio frequency voltage is greater than the standard radio frequency voltage, the actual radio frequency current is smaller than the standard radio frequency current, it indicates that the flow of the silane is higher, i.e. the silane flowmeter floats, and if the actual radio frequency voltage is smaller than the standard radio frequency voltage, the actual radio frequency current is greater than the standard radio frequency current, it indicates that the ammonia flowmeter floats. If the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the flow of the silane flowmeter or the ammonia flowmeter is reduced, the actual radio frequency voltage is smaller than the standard radio frequency voltage (the actual radio frequency current is larger than the standard radio frequency current), the silane flowmeter is reduced, and otherwise, the ammonia flowmeter is reduced.
It should be noted that the product of the actual rf voltage and the actual rf current, i.e. the power, remains unchanged.
When the film deposited by the tubular PECVD system is an alumina film, the target film is an alumina film, and the step S3 comprises:
if the thickness of the detection film layer of the alumina film is smaller than the standard film layer thickness, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the TMA flowmeter floats down;
if the thickness of the detection film layer of the alumina film is larger than the thickness of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining the float height of the TMA flowmeter;
if the thickness of the detection film layer of the alumina film is larger than the thickness of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining the drift height of the laughing gas flowmeter;
if the thickness of the detection film layer of the alumina film is smaller than the thickness of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the laughing gas flowmeter is low.
Wherein, the standard film thickness of the alumina film can be 12nm. TMA (trimethylaluminum) and laughing gas (N) 2 O, nitrous oxide) is deposited by PECVD techniques to form an aluminum oxide film, and high flow rates of TMA and laughing gas both cause an increase in the thickness of the aluminum oxide film. An increase in the flow of TMA will cause an increase in the radio frequency voltage (decrease in the radio frequency current) and an increase in the flow of laughing gas will cause a decrease in the radio frequency voltage (increase in the radio frequency current). Based on the above, if the thickness of the detection film layer of the alumina film is greater than the standard film layer thickness, it indicates that the flow of the TMA flowmeter or the laughing gas flowmeter is high, the actual radio frequency voltage is greater than the standard radio frequency voltage, the actual radio frequency current is smaller than the standard radio frequency current, it indicates that the flow of the TMA is high, i.e. the TMA flowmeter is high, and if the actual radio frequency voltage is smaller than the standard radio frequency voltage, the actual radio frequency current is greater than the standard radio frequency current, it indicates that the laughing gas flowmeter is high. If the detection film layer of the alumina filmThe thickness is smaller than the standard film thickness, which indicates that the flow of the TMA flowmeter or the laughing gas flowmeter is low, the actual radio frequency voltage is smaller than the standard radio frequency voltage (the actual radio frequency current is larger than the standard radio frequency current), which indicates that the TMA flowmeter is low, and otherwise, which indicates that the laughing gas flowmeter is low.
In the embodiment of the invention, the flow meter drift height means that the flow meter flow rate is larger than the standard flow rate, and the flow meter drift low means that the flow meter flow rate is smaller than the standard flow rate.
For a clearer understanding, see the following table:
in the above table, TK represents the detection film thickness and Ni represents the detection film refractive index.
Optionally, step S3 includes:
s31, calculating a first difference value between the thickness of a detection film layer and the thickness of a standard film layer of the target film, a second difference value between the refractive index of the detection film layer and the refractive index of the standard film layer, a third difference value between the actual radio frequency voltage and the standard radio frequency voltage, and a fourth difference value between the actual radio frequency current and the standard radio frequency current;
s32, determining that at least one flowmeter of the silane flowmeter, the ammonia flowmeter, the TMA flowmeter and the laughing gas flowmeter works abnormally based on the size of at least three of the first difference value, the second difference value, the third difference value and the fourth difference value and the type of the target film.
Specifically, if the target film type is a silicon nitride film, the first difference value is more than 0, the second difference value is more than 0, the third difference value is more than 0, and the fourth difference value is less than 0, the silane flowmeter is abnormally high;
if the third difference value is less than 0, the fourth difference value is more than 0, the first difference value is more than 0, and the second difference value is less than 0, the ammonia flow meter is abnormally high;
if the third difference value is less than 0, the fourth difference value is more than 0, the first difference value is less than 0, and the second difference value is less than 0, the silane flowmeter is abnormally low;
if the third difference value is more than 0, the fourth difference value is less than 0, the first difference value is less than 0, and the second difference value is more than 0, the ammonia flow meter is abnormally low.
If the type of film currently deposited is an alumina film, then:
if the third difference value is less than 0, the fourth difference value is more than 0, and the first difference value is less than 0, the TMA flowmeter is abnormally low;
if the third difference value is more than 0, the fourth difference value is less than 0, and the first difference value is more than 0, the TMA flowmeter is abnormally high;
if the third difference value is less than 0, the fourth difference value is more than 0, and the first difference value is more than 0, the laughing gas flowmeter is abnormally high;
if the third difference value is more than 0, the fourth difference value is less than 0, and the first difference value is less than 0, the laughing gas flowmeter is abnormally low.
Illustratively, when the target film is a silicon nitride film, the first, second, third and fourth differences are calculated from the foregoing example data:
calculating a first difference value = the detected film thickness of the silicon nitride film-the standard film thickness of the silicon nitride film = 85-82 = 3nm;
calculating a second difference value = the detected film refractive index of the silicon nitride film-the standard film refractive index of the silicon nitride film = 2.15-2.08 = 0.07;
calculating a third difference value = actual radio frequency voltage of the silicon nitride film-standard radio frequency voltage of the silicon nitride film = 360-340 = 20V;
calculating a fourth difference value = actual radio frequency current of the silicon nitride film-standard radio frequency current of the silicon nitride film = 18.06-19.10 = -1.04A;
the third difference is 20V > 0, so that the RF voltage is raised. According to comprehensive analysis, the thickness and the refractive index of the silicon nitride film are determined by the proportion of ammonia gas and silane gas, and meanwhile, the silane is insufficient when participating in the reaction, so that the change of the silane quantity has obvious influence on the thickness and the refractive index of the film, and the ratio of N to Si is inversely proportional to the refractive index, so that the situation that the actual film thickness is increased and the refractive index is increased is shown when the actual flow of the silane is increased; and then according to the influence condition of gas ionization on the radio frequency voltage and current (the silane amount is increased and the radio frequency voltage is increased), the abnormality is caused by the actual float of the silane flowmeter.
And (3) verification: after replacing and maintaining the pressure of the silane flowmeter, carrying out a reset experiment according to the original parameters to confirm that the coating color is normal, and testing the film parameters of the deposited film again to recover to be normal.
According to the method for determining the abnormal operation of the flowmeter of the tubular PECVD system, provided by the invention, the abnormal operation flowmeter can be determined by acquiring the detection physical parameters of the target film and the actual operation parameters of the tubular PECVD system corresponding to the target film and based on the type of the target film, the detection physical parameters, the actual operation parameters, the standard physical parameters corresponding to the target film and the standard operation parameters of the tubular PECVD system corresponding to the target film, the flowmeter does not need to be checked one by one, the method is quick and convenient, the application range is wider, the method is applicable to gas flowmeters and liquid flowmeters, and the production capacity is not influenced.
The embodiment of the invention also provides a device for determining abnormal operation of the flowmeter of the tubular PECVD system, which comprises:
a memory storing a computer program; and
and the processor can run a computer program stored in the memory to realize the abnormal operation method of the flowmeter of the tubular PECVD system provided by the embodiment.
Preferably, the apparatus further comprises: ellipsometer for testing physical parameters of a target film. The ellipsometer transmits the measured physical parameters of the target film to the memory. The memory also stores the running record of the tubular PECVD system.
The device for determining abnormal operation of the flow meter of the tubular PECVD system and the method for determining abnormal operation of the flow meter of the tubular PECVD system provided in the foregoing embodiments are mutually complementary, and detailed implementation procedures of the device embodiment are described in method embodiments, which are not repeated herein.
It should be appreciated that the terms "first," "second," "third," "fourth," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", "a third" and a fourth "may explicitly or implicitly include one or more such feature.
The above embodiments are merely for illustrating the technical concept and features of the present invention, and are not intended to limit the scope of the present invention to those skilled in the art to understand the present invention and implement the same. All modifications made according to the spirit of the main technical proposal of the invention should be covered in the protection scope of the invention.
Claims (9)
1. A method of determining abnormal operation of a flow meter of a tubular PECVD system comprising a plurality of flow meters for controlling different gases or liquids, respectively, wherein the plurality of flow meters comprises a silane flow meter, an ammonia flow meter, a TMA flow meter, and a laughing gas flow meter, the method comprising:
acquiring detection physical parameters of a target film, wherein the target film is deposited when a flowmeter of the tubular PECVD system operates abnormally;
acquiring actual operation parameters of the tubular PECVD system corresponding to the target film;
determining a flowmeter for abnormal operation based on the type of the target film, the detected physical parameter, the actual operation parameter, the standard physical parameter corresponding to the target film, and the standard operation parameter of the tubular PECVD system corresponding to the target film, comprising:
calculating a first difference value between the thickness of the detection film layer and the thickness of the standard film layer, a second difference value between the refractive index of the detection film layer and the refractive index of the standard film layer, a third difference value between the actual radio frequency voltage and the standard radio frequency voltage, and a fourth difference value between the actual radio frequency current and the standard radio frequency current of the target film;
and determining that at least one flowmeter of the silane flowmeter, the ammonia flowmeter, the TMA flowmeter and the laughing gas flowmeter works abnormally based on the magnitudes of at least three of the first difference value, the second difference value, the third difference value and the fourth difference value and the type of the target film.
2. The method of claim 1, further comprising, prior to said obtaining the detected physical parameter of the target film:
and if the color of the film deposited by the tubular PECVD system is abnormal, determining the film deposited by the tubular PECVD system as the target film.
3. The method for determining abnormal operation of a flow meter of a tube PECVD system according to claim 1, wherein the obtaining the detected physical parameters of the target film comprises:
testing the target film by adopting an ellipsometer to obtain a test physical parameter; and if the test physical parameter is different from the standard physical parameter, taking the test physical parameter as the detection physical parameter of the target film.
4. The method of determining abnormal operation of a flow meter of a tube PECVD system of any of claims 1-3, wherein the detecting a physical parameter comprises at least one of detecting a film thickness and detecting a film refractive index, and the standard physical parameter comprises at least one of a standard film thickness and a standard film refractive index;
the actual operating parameter includes at least one of an actual radio frequency voltage and an actual radio frequency current, and the standard operating parameter includes at least one of a standard radio frequency voltage and a standard radio frequency current.
5. The method according to claim 4, wherein at least one of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter is determined to be abnormally operated based on the type of the target thin film, the detected physical parameter, the actual operation parameter, the standard physical parameter corresponding to the target thin film, and the standard operation parameter of the tubular PECVD system corresponding to the target thin film.
6. The method for determining abnormal operation of a flow meter of a tube PECVD system according to claim 5, wherein the target film is a silicon nitride film, the determining abnormal operation of at least one flow meter of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter based on the type of the target film, the detected physical parameter, the actual operation parameter, the standard physical parameter corresponding to the target film, and the standard operation parameter of the tube PECVD system corresponding to the target film, comprising:
if the thickness of the detection film layer of the silicon nitride film is larger than the thickness of the standard film layer, the refractive index of the detection film layer is larger than the refractive index of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the silane flowmeter floats;
if the thickness of the detection film layer of the silicon nitride film is larger than the thickness of the standard film layer, the refractive index of the detection film layer is smaller than the refractive index of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the ammonia flow meter floats;
if the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the refractive index of the detection film layer is smaller than the refractive index of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the silane flowmeter floats down;
if the thickness of the detection film layer of the silicon nitride film is smaller than the thickness of the standard film layer, the refractive index of the detection film layer is larger than the refractive index of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the ammonia flow meter floats down.
7. The method for determining abnormal operation of a flow meter of a tube PECVD system according to claim 5, wherein the target film is an alumina film, and the determining abnormal operation of at least one flow meter of the silane flow meter, the ammonia flow meter, the TMA flow meter, and the laughing gas flow meter based on the type of the target film, the detected physical parameter, the actual operation parameter, the standard physical parameter corresponding to the target film, and the standard operation parameter of the tube PECVD system corresponding to the target film comprises:
if the thickness of the detection film layer of the alumina film is smaller than the standard film layer thickness, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the TMA flowmeter floats down;
if the thickness of the detection film layer of the alumina film is larger than the standard film layer thickness, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the TMA flowmeter floats;
if the thickness of the detection film layer of the alumina film is larger than the thickness of the standard film layer, the actual radio frequency voltage is smaller than the standard radio frequency voltage, and the actual radio frequency current is larger than the standard radio frequency current, determining that the laughing gas flowmeter floats;
if the thickness of the detection film layer of the alumina film is smaller than the thickness of the standard film layer, the actual radio frequency voltage is larger than the standard radio frequency voltage, and the actual radio frequency current is smaller than the standard radio frequency current, determining that the laughing gas flowmeter floats down.
8. A device for determining abnormal operation of a flow meter of a tube PECVD system, said device comprising:
a memory storing a computer program; and
a processor operable to execute the computer program stored on the memory to implement the method of any one of claims 1-7.
9. The apparatus for determining abnormal operation of a flow meter of a tube PECVD system according to claim 8, further comprising: ellipsometer for testing physical parameters of the target film.
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