CN113481488A - Method for judging plating supplement of PECVD (plasma enhanced chemical vapor deposition) tubular equipment - Google Patents
Method for judging plating supplement of PECVD (plasma enhanced chemical vapor deposition) tubular equipment Download PDFInfo
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- CN113481488A CN113481488A CN202110835269.1A CN202110835269A CN113481488A CN 113481488 A CN113481488 A CN 113481488A CN 202110835269 A CN202110835269 A CN 202110835269A CN 113481488 A CN113481488 A CN 113481488A
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 41
- 238000007747 plating Methods 0.000 title claims abstract description 30
- 239000013589 supplement Substances 0.000 title claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 170
- 230000008021 deposition Effects 0.000 claims abstract description 170
- 230000002159 abnormal effect Effects 0.000 claims abstract description 84
- 238000011536 re-plating Methods 0.000 claims 2
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 10
- 239000000047 product Substances 0.000 abstract description 7
- 230000001502 supplementing effect Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 43
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910002804 graphite Inorganic materials 0.000 description 19
- 239000010439 graphite Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 8
- 239000012634 fragment Substances 0.000 description 6
- 239000002699 waste material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a plating supplementing judgment method of PECVD (plasma enhanced chemical vapor deposition) tubular equipment, which comprises the following steps of: firstly), recording data; secondly), high-frequency alarming is carried out; thirdly), calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed; fourthly), judging an effective deposition step and an ineffective deposition step of the abnormal batch; fifthly), judging the plating supplement of the abnormal batch. The invention can judge whether the abnormal batch can be replated, and the invention has the following characteristics: the invention can accurately judge the actual coating time in the process, avoid or reduce color difference sheets, refractive index abnormal sheets and the like generated by the coating repair, reduce the rework rate and save the cost; the actual deposition condition of each film layer is controlled, so that the occurrence of abnormal film layer structures is avoided, and the reliability and appearance quality of the product are improved; the invention reduces the workload of process personnel and saves the labor cost while ensuring the stable product quality.
Description
Technical Field
The invention relates to the wide field, in particular to a method for judging the additional plating of PECVD tubular equipment.
Background
At present, a solar cell mainly comprises a crystalline silicon cell, and the manufacturing process mainly comprises the working procedures of cleaning and texturing, diffusing and knotting, manufacturing a selective emitter by laser, etching and polishing, oxidizing and annealing, ALD aluminum oxide coating, PECVD coating, laser grooving, silk-screen sintering and the like. In the PECVD coating process, various superposed films such as silicon oxide, silicon nitride or silicon oxynitride are sometimes required to be coated on the front and back surfaces of the silicon wafer respectively to achieve the effects of increasing light absorption, reducing the surface and body composition of the silicon wafer, providing effective PID resistance, controlling the appearance color of the cell and the like, so the PECVD coating is a key process concerning the efficiency, reliability and product appearance of the cell.
The main process flow of PECVD coating is that a mechanical arm loads a silicon wafer on a graphite boat, the graphite boat enters a furnace tube (PECVD tube type equipment) and is connected with an electrode, the furnace tube is heated and vacuumized, reaction gas is introduced after constant temperature and pressure, plasma is generated by high-frequency power glow discharge, reaction active groups are deposited on the silicon wafer to form a film, various reaction gases are sequentially introduced or the gas proportion is adjusted according to different process designs, different film layers and different thicknesses are deposited, after the deposition is finished, the furnace tube is subjected to purging, evacuation and nitrogen filling back pressure, the outlet tube of the graphite boat is cooled, and finally the wafer is unloaded by the mechanical arm and relevant detection is carried out.
In the actual production process, the high-frequency alarm of the machine table can be caused due to the fact that the graphite boat is internally provided with fragments, the graphite boat is in poor contact with an electrode, the power supply is abnormal or the gas flow is abnormal, and the process can be automatically stopped during the high-frequency alarm and the furnace tube discharging step can be completed. In order to reduce the rework rate, production staff generally takes charge of checking the condition of fragments in the graphite boat, process technicians generally confirm the deposition step and the deposition time which are not operated by checking the historical record information of the alarm tube, generally take the time point of the deposition step of process termination as the time starting point of the deposition step of the secondary process (the complementary plating process), the finished deposition step and deposition time are not repeated, and the alarm boat is operated again to finish the coating process after the process is edited and modified manually.
The method for plating the high-frequency alarm boat can greatly reduce the generation of reworked wafers and reduce the production cost, but in the actual operation process, the method for plating the high-frequency alarm boat can still generate color difference wafers, the tested film thickness and refractive index of the silicon wafers after plating often exceed the standard line, the unstable plating result is unacceptable, and the method has great product reliability risk and component lamination color difference risk.
Disclosure of Invention
The invention aims to provide a plating supplementing judgment method for PECVD (plasma enhanced chemical vapor deposition) tubular equipment, which comprises the following steps of:
firstly), recording data;
secondly), high-frequency alarming is carried out;
thirdly), calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed;
fourthly), judging an effective deposition step and an ineffective deposition step of the abnormal batch;
fifthly), judging the plating supplement of the abnormal batch.
The specific content of the plating supplementing judgment method is shown in the embodiment, the method can judge whether the abnormal batch can be subjected to plating supplementing, and the method is based on the following principle/factor to judge:
1) the invention takes a plurality of (15-25) normal batches which are most recent before the high-frequency alarm as a reference batch, and aims to utilize more recent running data to represent the actual running state of the PECVD tubular equipment when the PECVD tubular equipment runs the PECVD process.
2) The invention calculates a reference value (a current reference value, a voltage reference value or a power reference value) by referring to operation data (current data, voltage data or power data) of a batch; specifically, the median of the running data is taken as a reference value, the median of the reference value with the same serial number is taken as a reference value, the reference value is set to be stable and accurate enough, and the risk of judgment errors is reduced.
3) The invention calculates the invalid time and the valid time of the abnormal batch after finishing the deposition step according to the operation data (current data, voltage data or power data) of the abnormal batch; specifically, the dead time and the active time are determined and calculated with the magnitude of change in the operating data from the reference value (3% deviation in the current or voltage data and 10% deviation in the power data). The PECVD tubular equipment discharges by a radio frequency power supply, takes silicon wafers as electrodes, ionizes reaction special gas into plasma by applying high voltage between the two silicon wafers and deposits the plasma on the surfaces of the silicon wafers to form a thin film, the gas breakdown voltage is known to be a function of the product of gas density and interelectrode distance according to the Barshen law, the distance of the silicon wafers in a graphite boat is constant, namely the interelectrode distance is fixed, so the voltage can reflect the actual gas density condition in the tube, a stable breakdown voltage value also exists when the special gas proportion is stable, meanwhile, the voltage and the current are in inverse proportion when the radio frequency power is constant, and the actual test result is combined, when the voltage is reduced by more than 3 percent, the condition that the reaction groups are insufficient to cause the film plating failure can be generated, so the actual film deposition condition can be judged by detecting the variation amplitude of the voltage, the current and the radio frequency power.
4) The present invention judges whether the completed deposition step is an active deposition step or an inactive deposition step according to whether the active time of the deposition step is greater than a predetermined deposition time (20 s). The silicon wafer needs to be coated with a plurality of films (at least two films) which are sequentially stacked from inside to outside, each film has the function of the film, each film needs to reach a certain thickness to effectively function, the effective time of the film deposition step needs to reach a certain degree in order to enable the film to reach a certain thickness, and according to the actual test result, the film with the thickness of about 2-3nm can be deposited within 20s, so that the thickness of the film can reach the effective requirement.
5) The invention judges whether the abnormal batch can be replated according to the existence condition of the invalid deposition step and the effective deposition step in the abnormal batch. Specifically, a plurality of films (at least two films) which are sequentially stacked from inside to outside need to be plated on the silicon wafer, and whether the abnormal batch can be subjected to additional plating or not is judged based on the following three condition pairs:
if an invalid deposition step exists in an abnormal batch and an effective deposition step exists in the subsequent invalid deposition step, the abnormal batch indicates that a certain inner film layer (namely, a film layer which needs to be formed in the invalid deposition step) in the abnormal batch does not meet the effective requirement, if the inner film layer does not reach a certain thickness, an outer film layer (namely, a film layer which is formed in the subsequent effective deposition step) is formed on the outer side of the inner film layer, and even the inner film layer is not plated at all, namely, the inner film layer fails or is lost; because the outer film layer is formed, the problem of failure or deficiency of the inner film layer cannot be solved even if the coating is supplemented, and if the abnormal batch coating (namely the residual deposition step stopped due to high-frequency alarm) is prepared into the battery piece, the reliability of the battery piece is abnormal and the lamination color difference of the assembly can be caused; therefore, the abnormal batch is judged as non-replacable plating, the working hour waste, the energy consumption waste and the cost waste of replacable plating on the abnormal batch are avoided, the unstable replacable plating results of a color difference sheet, an integral film thickness exceeding a standard line, a refractive index exceeding the standard line and the like which are caused by the inner film layer missing or the thickness failing to reach the standard are avoided or improved, and the reliability risk of the final battery piece and the laminating color difference risk of the assembly are avoided or improved;
if the abnormal batch does not have the invalid deposition step, indicating that all the finished deposition steps of the abnormal batch are valid deposition steps, namely all the deposited film layers of the abnormal batch meet the valid requirements, and the abnormal batch does not have film layer failure or film layer loss; therefore, the abnormal batch is judged to be replacable, and after the graphite boat which is taken out of the abnormal batch is checked and processed (such as the condition of checking and processing fragments in the graphite boat and the like), the graphite boat is sent into a PECVD tubular device, and the residual deposition step which is stopped due to high-frequency alarm is continuously completed;
if only one invalid deposition step exists in the abnormal batch and the invalid deposition step is a deposition step stopped due to high-frequency alarm, only the last deposition step is an invalid deposition step in all the completed deposition steps of the abnormal batch, and the rest previous deposition steps are effective deposition steps; that is, only the outermost layer of all the deposited film layers in the abnormal batch does not meet the effective requirement, and the rest of all the inner layer of the film layers meet the effective requirement, and the abnormal batch does not have failure or deletion of the inner film layer, and only the outermost layer of the film layer is the failed or deleted defective film layer; the abnormal batch is judged to be replacable, the graphite boat which is taken out of the abnormal batch can be checked and processed (such as the condition of checking and processing fragments in the graphite boat and the like), then the graphite boat is sent into the PECVD tubular equipment, the process parameters of the replacation are adjusted, the defective film layer is repaired through the replacation, and the residual deposition step which is stopped due to high-frequency alarm is continuously completed.
In conclusion, the method can judge whether the abnormal batch can be replated, and has the following characteristics:
1. the invention can accurately judge the actual coating time in the process, avoid or reduce color difference sheets, refractive index abnormal sheets and the like generated by the coating repair, reduce the rework rate and save the cost;
2. the actual deposition condition of each film layer is controlled, so that the occurrence of abnormal film layer structures is avoided, and the reliability and appearance quality of the product are improved;
3. the invention reduces the workload of process personnel and saves the labor cost while ensuring the stable product quality.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a plating supplementing judgment method of PECVD (plasma enhanced chemical vapor deposition) tubular equipment, which comprises the following steps of:
one) data recording
The PECVD process is operated in batches in PECVD tubular equipment, the PECVD process comprises at least two deposition steps, and the serial numbers of the deposition steps in the PECVD process are determined in sequence;
recording the operation data of each batch; any batch of recorded operational data, including: the serial number of the deposition steps run on the batch, and the current data, voltage data, power data and total run time of any one serial number deposition step;
taking the batch which normally finishes all the deposition steps of the PECVD process as a normal batch;
two) high frequency alarm
When the PECVD tube equipment generates high-frequency alarm, stopping the deposition step of the current operation of the PECVD tube equipment and finishing the boat discharge;
taking the batch which is stopped and taken out of the boat due to the high-frequency alarm as an abnormal batch;
three) calculating the invalid time and the valid time of the abnormal batch for completing the deposition step
Taking the latest 15-25 (the specific quantity can be adjusted according to actual conditions) normal batches before the high-frequency alarm as reference batches, and calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed according to current data, voltage data or power data; wherein:
A) calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed according to the current data, comprising the following steps:
A1) the run data for the reference batch is queried and calculated as follows: calculating the current median of the deposition step according to the current data of any deposition step in a reference batch, and taking the current median as the current reference value of the deposition step; calculating the median of the current reference value of the serial number according to the current reference value of the same serial number deposition step in each reference batch, and taking the median as the current reference value of the serial number;
A2) inquiring the running data of the abnormal batch, and calculating as follows: comparing the current data of any completed deposition step in an abnormal batch with a current reference value of a sequence number corresponding to the deposition step, taking the current data which exceeds the current reference value by 3 percent (preset amplitude) as the ineffective current of the deposition step, taking the running time occupied by the ineffective current in the deposition step as the ineffective time of the deposition step, and taking the difference between the total running time and the ineffective time of the deposition step as the effective time of the deposition step;
B) calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed according to the voltage data, and comprising the following steps:
B1) the run data for the reference batch is queried and calculated as follows: calculating the voltage median of the deposition step according to the voltage data of any deposition step in a reference batch, and taking the voltage median as a voltage reference value of the deposition step; calculating the median of the voltage reference value of the serial number according to the voltage reference value of the same serial number deposition step in each reference batch, and taking the median as the voltage reference value of the serial number;
B2) inquiring the running data of the abnormal batch, and calculating as follows: comparing the voltage data of any completed deposition step in an abnormal batch with a voltage reference value of a sequence number corresponding to the deposition step, taking the voltage data which is lower than the voltage reference value by 3 percent (preset amplitude) as an invalid voltage of the deposition step, taking the running time occupied by the invalid voltage in the deposition step as the invalid time of the deposition step, and taking the difference between the total running time and the invalid time of the deposition step as the valid time of the deposition step;
C) calculating the invalid time and the valid time of the abnormal batch for completing the deposition step according to the power data, comprising the following steps:
C1) the run data for the reference batch is queried and calculated as follows: calculating the power median of any deposition step in a reference batch according to the power data of the deposition step, and taking the power median as a power reference value of the deposition step; calculating the median of the power reference value of the serial number according to the power reference value of the same serial number deposition step in each reference batch, and taking the median as the power reference value of the serial number;
C2) inquiring the running data of the abnormal batch, and calculating as follows: comparing the power data of any completed deposition step in the abnormal batch with a power reference value of a sequence number corresponding to the deposition step, taking the power data which is lower than the power reference value by 10 percent (preset amplitude) as the invalid power of the deposition step, taking the running time occupied by the invalid power in the deposition step as the invalid time of the deposition step, and taking the difference between the total running time and the invalid time of the deposition step as the effective time of the deposition step;
four) effective deposition step and ineffective deposition step for judging abnormal batch
Comparing the effective time of the abnormal batch for completing the deposition step with a preset deposition time (20 s), taking the deposition step with the effective time larger than the preset deposition time (20 s) as an effective deposition step, and taking the deposition step with the effective time not larger than the preset deposition time (20 s) as an ineffective deposition step;
fifthly) judging the plating of abnormal batches
If an invalid deposition step exists in an abnormal batch and an effective deposition step exists in the subsequent step of the invalid deposition step, judging that the abnormal batch cannot be subjected to additional plating; the working hour waste, the energy consumption waste and the cost waste of the repair plating of the abnormal batch are avoided, the unstable repair plating results of the color difference sheet, the integral film thickness exceeding the standard line, the refractive index exceeding the standard line and the like which are finally generated due to the inner film layer missing or the thickness failing to reach the standard are avoided or improved, and the reliability risk of the final battery piece and the component lamination color difference risk are avoided or improved;
if the invalid deposition step does not exist in the abnormal batch, judging that the abnormal batch can be subjected to additional plating; after the graphite boat which is discharged from the abnormal batch is checked and processed (such as the condition of checking and processing fragments in the graphite boat and the like), the graphite boat is sent into PECVD tubular equipment, and the residual deposition step which is stopped due to high-frequency alarm is continuously completed;
if only one invalid deposition step exists in the abnormal batch, and the invalid deposition step is a deposition step stopped due to high-frequency alarm, judging that the abnormal batch can be subjected to plating compensation; after the graphite boat which is taken out of the boat in the abnormal batch is inspected and processed (such as the condition of inspecting and processing fragments in the graphite boat and the like), the graphite boat is sent into the PECVD tubular equipment, the process parameters of the plating supplement are adjusted, the defect film layer in the invalid deposition step is repaired through the plating supplement, and the residual deposition step which is stopped due to high-frequency alarm is continuously completed.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
- The method for judging the plating supplement of the PECVD tubular equipment is characterized by comprising the following steps:one) data recordingThe PECVD process is operated in batches in PECVD tubular equipment, the PECVD process comprises at least two deposition steps, and the serial numbers of the deposition steps in the PECVD process are determined in sequence;recording the operation data of each batch; any batch of recorded operational data, including: the serial number of the deposition steps run on the batch, and the current data, voltage data, power data and total run time of any one serial number deposition step;taking the batch which normally finishes all the deposition steps of the PECVD process as a normal batch;two) high frequency alarmWhen the PECVD tube equipment generates high-frequency alarm, stopping the deposition step of the current operation of the PECVD tube equipment and finishing the boat discharge;taking the batch which is stopped and taken out of the boat due to the high-frequency alarm as an abnormal batch;three) calculating the invalid time and the valid time of the abnormal batch for completing the deposition stepTaking a plurality of latest normal batches before the high-frequency alarm as reference batches, and calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed according to the current data, the voltage data or the power data; wherein:A) calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed according to the current data, comprising the following steps:A1) the run data for the reference batch is queried and calculated as follows: calculating the current median of the deposition step according to the current data of any deposition step in a reference batch, and taking the current median as the current reference value of the deposition step; calculating the median of the current reference value of the serial number according to the current reference value of the same serial number deposition step in each reference batch, and taking the median as the current reference value of the serial number;A2) inquiring the running data of the abnormal batch, and calculating as follows: comparing the current data of any completed deposition step in an abnormal batch with a current reference value of a sequence number corresponding to the deposition step, taking the current data exceeding the current reference value by a preset amplitude as the ineffective current of the deposition step, taking the running time occupied by the ineffective current in the deposition step as the ineffective time of the deposition step, and taking the difference between the total running time and the ineffective time of the deposition step as the effective time of the deposition step;B) calculating the invalid time and the valid time of the abnormal batch after the deposition step is completed according to the voltage data, and comprising the following steps:B1) the run data for the reference batch is queried and calculated as follows: calculating the voltage median of the deposition step according to the voltage data of any deposition step in a reference batch, and taking the voltage median as a voltage reference value of the deposition step; calculating the median of the voltage reference value of the serial number according to the voltage reference value of the same serial number deposition step in each reference batch, and taking the median as the voltage reference value of the serial number;B2) inquiring the running data of the abnormal batch, and calculating as follows: comparing the voltage data of any completed deposition step in an abnormal batch with a voltage reference value of a sequence number corresponding to the deposition step, taking the voltage data with a preset amplitude lower than the voltage reference value as an invalid voltage of the deposition step, taking the running time occupied by the invalid voltage in the deposition step as the invalid time of the deposition step, and taking the difference between the total running time and the invalid time of the deposition step as the effective time of the deposition step;C) calculating the invalid time and the valid time of the abnormal batch for completing the deposition step according to the power data, comprising the following steps:C1) the run data for the reference batch is queried and calculated as follows: calculating the power median of any deposition step in a reference batch according to the power data of the deposition step, and taking the power median as a power reference value of the deposition step; calculating the median of the power reference value of the serial number according to the power reference value of the same serial number deposition step in each reference batch, and taking the median as the power reference value of the serial number;C2) inquiring the running data of the abnormal batch, and calculating as follows: comparing the power data of any completed deposition step in the abnormal batch with a power reference value of a sequence number corresponding to the deposition step, taking the power data with a preset amplitude lower than the power reference value as the invalid power of the deposition step, taking the running time occupied by the invalid power in the deposition step as the invalid time of the deposition step, and taking the difference between the total running time and the invalid time of the deposition step as the effective time of the deposition step;four) effective deposition step and ineffective deposition step for judging abnormal batchComparing the effective time of the abnormal batch which has finished the deposition step with a preset deposition time, taking the deposition step of which the effective time is greater than the preset deposition time as an effective deposition step, and taking the deposition step of which the effective time is not greater than the preset deposition time as an ineffective deposition step;fifthly) judging the plating of abnormal batchesAnd if an invalid deposition step exists in the abnormal batch and an effective deposition step exists in the subsequent invalid deposition step, judging that the abnormal batch cannot be plated again.
- 2. The method of claim 1, wherein if there is no invalid deposition step in the abnormal lot, the abnormal lot is determined to be replated.
- 3. The method of claim 1, wherein if there is only one invalid deposition step in an abnormal lot, and the invalid deposition step is a deposition step stopped due to a high frequency alarm, it is determined that the abnormal lot can be replated.
- 4. The method for judging the replating of a PECVD tube type apparatus as recited in claim 1, wherein the latest 15-25 normal batches before the high frequency alarm are used as the reference batch.
- 5. The method for judging the replating of the PECVD tubular equipment as recited in claim 1, wherein the predetermined amplitude in the step A2) is 3%; the predetermined amplitude in step B2) is 3%; the predetermined amplitude in step C2) is 10%.
- 6. The method of claim 1, wherein the predetermined deposition time is 20 s.
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