CN218847609U - Detection equipment of gas spray header for semiconductor - Google Patents
Detection equipment of gas spray header for semiconductor Download PDFInfo
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- CN218847609U CN218847609U CN202223350158.0U CN202223350158U CN218847609U CN 218847609 U CN218847609 U CN 218847609U CN 202223350158 U CN202223350158 U CN 202223350158U CN 218847609 U CN218847609 U CN 218847609U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a check out test set of gas shower head for semiconductor relates to the semiconductor and makes the field, equipment includes at least: an air intake portion; the gas spray header is communicated with the gas inlet part through a pipeline; the detection device is arranged between the gas inlet part and the gas spray header and is communicated with the pipeline; the control valve is arranged between the detection device and the gas spray header; and the control unit is electrically connected with the detection device and the control valve. The utility model provides a pair of check out test set of gas shower head for semiconductor can improve the whole homogeneity of deposit film.
Description
Technical Field
The utility model relates to a semiconductor manufacturing field, in particular to check out test set of gas shower head for semiconductor.
Background
In the production process of semiconductor devices, the gas spray header of a machine table is easily blocked or corroded by the influence of chemical gas in the using process, and the aperture of the spray header can be changed, so that the flow and the concentration of gas sprayed out by the spray header are not consistent with the numerical value marked by the spray header. Therefore, the deviation of the flow rate and concentration of the sprayed gas is caused, the problem of uneven overall thickness of the formed film layer is caused, and the reliability of the semiconductor device is seriously influenced.
Due to the change of the aperture and the flow of the spray header, engineers cannot accurately judge the flow of gas sprayed out of the spray header when adjusting the uniformity, and can only perform on-machine adjustment by referring to the size of the mark on the spray header, and after the on-machine adjustment, if the difference between the thickness of the replaced film at the spray header and the preset thickness is too large, the spray header needs to be replaced again and subjected to adjustment and test, so that the production efficiency is seriously reduced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a check out test set of gas shower head for semiconductor can effectively reduce the inhomogeneous problem of the whole thickness of rete that leads to forming because of the gas flow and the concentration of spraying are inaccurate, improves semiconductor device's reliability.
The utility model provides a check out test set of gas shower head for semiconductor includes at least:
an air intake portion;
the gas spray header is communicated with the gas inlet part through a pipeline;
the detection device is arranged between the gas inlet part and the gas spray header and is communicated with the pipeline;
the control valve is arranged between the detection device and the gas spray header; and
and the control unit is electrically connected with the detection device and the control valve.
The utility model discloses an in the embodiment, the gas shower head includes benchmark gas shower head and the gas shower head that awaits measuring, the benchmark gas shower head with the gas shower head that awaits measuring sets up in parallel.
In an embodiment of the present invention, the control valve includes a first port, and the first port is communicated with the detecting device through the pipeline.
In an embodiment of the present invention, the control valve includes a second port, and the second port is communicated with the reference gas shower head through the pipeline.
The utility model discloses an in one embodiment, control flap includes the third port, the third port passes through the pipeline with the gas shower head intercommunication that awaits measuring.
In an embodiment of the present invention, the detecting device further includes a sealing chamber, one end of the sealing chamber is communicated with the air inlet portion, and the other end is communicated with the gas spraying head.
In an embodiment of the present invention, the detecting device includes a flow detecting unit, the flow detecting unit is disposed on the side wall of the sealed chamber and extends into the sealed chamber.
In an embodiment of the present invention, the detecting device includes a pressure detecting unit, the pressure detecting unit is disposed on the side wall of the sealed chamber and extends into the sealed chamber.
In an embodiment of the present invention, the flow detecting unit includes a flow sensor, and one end of the flow sensor extends into the sealing chamber.
In an embodiment of the present invention, the flow detecting unit includes an instrument panel, the instrument panel is electrically connected to the flow sensor.
The utility model provides a pair of check out test set of gas shower head for semiconductor can accurate detection flow through the gas flow of different shower heads to be favorable to electing the closest deposit and go out the shower head of predetermineeing thick, thereby improve the homogeneity and the controllability of the whole thickness of deposit film, thereby improve semiconductor device's reliability. The gas flow of the spray header is detected conveniently and quickly, and the problem that the actual flow of the spray header cannot be accurately judged when uniformity is adjusted, so that multiple times of adjustment and test are needed in the actual production process is avoided, the manpower and time input in the production process are effectively reduced, and the production efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a detection apparatus for a gas shower head for a semiconductor according to an embodiment of the present invention.
Fig. 2 is a schematic structural diagram of a flow detecting unit according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a pressure detecting unit according to an embodiment of the present invention.
Fig. 4 is a schematic structural view of a wafer and a gas shower head according to an embodiment of the present invention.
Description of reference numerals:
100. a detection device; 110. a flow rate detection unit; 111. a flow sensor; 112. a connecting rod; 113. a fixing member; 114. a connecting member; 115. a seal member; 116. an instrument panel; 120. a pressure detection unit; 121. a pressure sensor; 122. a signal processor; 123. a display panel; 130. sealing the chamber; 200. a control unit; 300. a control valve; 301. a first port; 302. a second port; 303. a third port; 400. a gas shower head; 410. a reference gas showerhead; 420. a gas spray header to be tested; 500. a pipeline; 600. an air intake portion; 700. a wafer; 800. a work bench.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
It should be understood that the structures, ratios, sizes, and the like shown in the drawings attached to the present specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used for limiting the conditions that the present disclosure can be implemented, so that the present disclosure has no technical essence, and any modification of the structures, changes of the ratio relationships, or adjustment of the sizes, should fall within the scope that the present disclosure can cover without affecting the efficacy and the achievable purpose of the present disclosure. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not used to limit the scope of the present invention, and the relative relationship between the terms may be changed or adjusted without substantial technical change.
In the semiconductor manufacturing process, each layer structure in a semiconductor device is manufactured by placing a wafer to be processed in a film forming chamber, adopting a film forming process and duplicating a mask pattern by adopting an etching process, so that the design of different devices is completed. The gas spray header has the main functions of accurately controlling the flow and the concentration of the sprayed gas, ensuring the accuracy of the film forming thickness on the surface of the wafer or ensuring the consistency of the etching depth, and enabling the thickness of the film layers in different areas to be more uniform. The utility model provides a check out test set of gas shower head for semiconductor can carry out accurate the measuring to the gaseous flow of gas shower head spun, is favorable to electing the gas shower head that gas flow is close to mutually to improve the whole homogeneity of rete.
Referring to fig. 1, the present invention provides a testing apparatus for a gas shower head for a semiconductor, and the apparatus includes a testing device 100, a control unit 200, a gas shower head 400, a pipeline 500 and an air inlet 600. The gas inlet 600 and the gas shower head 400 are communicated with each other through a pipe 500, and the detection device 100 is provided between the gas inlet 600 and the gas shower head 400, is communicated with the gas inlet 600 and the gas shower head 400, and detects the flow rate and pressure of gas in a passage between the gas inlet 600 and the gas shower head 400, thereby detecting the gas flow rate of the gas shower head 400. The control unit 200 is electrically connected to the detection device 100, and adjusts the pressure of the gas in the passage.
Referring to fig. 1, in an embodiment of the present invention, the gas inlet 600 is used for storing gas, and the gas inlet 600 is, for example, a gas cylinder, and further, a gas storage tank. In an embodiment of the present invention, the gas inlet 600 delivers the stored gas to the gas shower head 400 through the pipeline 500, and sprays the gas to the wafer surface through the gas shower head 400, so as to deposit a film layer on the wafer surface or etch the wafer surface. The present invention does not limit the specific type of gas stored in the inlet 600, such as oxygen (O) 2 ) Nitrogen (N) 2 ) Hydrogen (H) 2 ) Chlorine (Cl) 2 ) Trifluoromethane (CHF) 3 ) Difluoromethane (CF) 2 ) Nitrogen trifluoride (NF) 3 ) Sulfur hexafluoride (SF) 6 ) Monosilane (SiH) 4 ) Or hydrogen bromide (HBr) or the like. In an embodiment of the present invention, the air inlet 600 is communicated with the pipeline 500, and a gas valve (not shown) is disposed at the connection position, for example, a high-pressure gas reducing valve, a middle-low pressure gas reducing valve, a stainless steel reducing valve, a high-temperature reducing valve, or a pneumatic control reducing valve, etc., so as to start or stop delivering gas to the pipeline 500, and the input flow of the gas delivered to the pipeline 500 can be adjusted.
Referring to fig. 1, in an embodiment of the present invention, the detecting device 100 is disposed between the gas inlet 600 and the gas shower head 400, and the detecting device 100 is respectively communicated with the gas inlet 600 and the gas shower head 400 through the pipeline 500, so as to detect the gas flow and the pressure of the passage between the gas inlet 600 and the gas shower head 400. In an embodiment of the present invention, the detecting device 100 includes a flow detecting unit 110, a pressure detecting unit 120 and a sealing chamber 130, wherein the flow detecting unit 110 and the pressure detecting unit 120 are disposed on a sidewall of the sealing chamber 130 and are communicated with the sealing chamber 130.
Referring to fig. 1, in an embodiment of the present invention, one end of the sealing chamber 130 is connected to the gas inlet 600 through a pipe 500, and the other end is connected to the gas shower head 400 through a pipe 500. The utility model discloses do not restrict the size and the volume of sealed chamber 130, can design according to the actual production needs. The material of the sealed chamber 130 is a material that is easy to machine and form, corrosion-resistant, high temperature resistant, and has good sealing performance, such as rubber or a metal material coated with an anti-corrosion layer.
Referring to fig. 1 and fig. 2, in an embodiment of the present invention, the flow detecting unit 110 is disposed on a sidewall of the sealed chamber 130, and a through hole (not shown) is disposed on the sealed chamber 130, and the flow detecting unit 110 is communicated with the sealed chamber 130 through the through hole to detect a gas flow in the sealed chamber 130. The gas flow rate in the entire passage formed by the gas inlet 600 and the gas shower head 400 is detected by detecting the gas flow rate in the sealed chamber 130, thereby detecting the gas flow rate in the entire passage formed by the gas inlet 600 and the gas shower head 400.
Referring to fig. 1 and 2, in an embodiment of the present invention, the flow detecting unit 110 includes a flow sensor 111, a connecting rod 112, a fixing member 113, a connecting member 114, a sealing member 115, and an instrument panel 116. In an embodiment of the present invention, one end of the flow sensor 111 communicates with the sealed chamber 130, and the other end is connected to the connecting rod 112. Specifically, one end of the flow sensor 111 extends into the sealed chamber 130 through a through hole in the sealed chamber 130, a sealing ring is arranged in the through hole, the diameter of the sealing ring is smaller than that of the flow sensor 111, the flow sensor 111 extrudes the sealing ring to realize sealing, and the gas flow in the sealed chamber 130 is detected. In an embodiment of the present invention, the flow sensor 111 is, for example, a resistance temperature sensor, and the number of the flow sensor 111 is, for example, 2, one of the sensors is heated, and the other sensor measures the temperature of the measured gas, and when the gas is static, the two temperature sensors form a temperature difference. When gas flows, based on the heat conduction principle, partial heat of the heated temperature sensor can be taken away by gas molecules, the heated temperature sensor can be continuously heated for ensuring the original temperature difference, the higher the flow of the gas is, the higher the heat taken away is, and the consumed heat and the flow of the gas form a functional relation. So that the flow rate of the gas is obtained according to the amount of heat consumed. In other embodiments, the flow sensor 111 may also be an electromagnetic flow sensor, an ultrasonic flow sensor, or an eddy current flow sensor.
Referring to fig. 1 and 2, in an embodiment of the present invention, the connecting rod 112 is connected to the instrument panel 116 through a connecting member 114, and the connecting member 114 and the flow sensor 111 are respectively disposed at two ends of the connecting rod 112. A sealing member 115 is provided at a connection of the connector 114 and the instrument panel 116 to seal the flow rate detecting unit 110. In an embodiment of the present invention, a converter is disposed in the instrument panel 116, the flow sensor 111 and the converter are electrically connected, the converter converts and processes the data detected by the flow sensor 111, obtains the flow value of the gas shower head 400, and displays the flow value on the instrument panel 116. In an embodiment of the present invention, the fixing member 113 is sleeved on the connecting rod 112, for example, the fixing member 113 is fixed on the wall or the equipment platform by means of bolts, flanges, or hinges, so as to fix the whole flow detecting unit 110.
Referring to fig. 1 and 3, in an embodiment of the present invention, the pressure detecting unit 120 is disposed on a sidewall of the sealed chamber 130 and is communicated with the sealed chamber 130. The pressure detection unit 120 is electrically connected to the control unit 200, and the control unit 200 controls the pressure applied to the sealing chamber 130 by the pressure detection unit 120, so as to test the gas flow rates of different gas showerheads 400 at a fixed pressure value, thereby ensuring the detection accuracy of the gas showerheads 400. In an embodiment of the present invention, the pressure detecting unit 120 includes a pressure sensor 121, a signal processor 122 and a liquid crystal display panel 123, and the pressure sensor 121 is electrically connected to the signal processor 122 and the liquid crystal display panel 123. The present invention is not limited to the type of the pressure sensor 121, and in one embodiment, the pressure sensor 121 may be, for example, a ceramic pressure sensor, in another embodiment, the pressure sensor 121 may also be, for example, a diffused silicon pressure sensor, and in other embodiments, the pressure sensor 121 may also be, for example, a sapphire pressure sensor. In an embodiment of the present invention, the pressure sensor 121 collects the pressure signal in the sealing chamber 130, and the pressure signal is processed by the signal processor 122, and the pressure data is displayed by the liquid crystal display panel 123.
Referring to fig. 1, in an embodiment of the present invention, the control valve 300 is disposed between the detecting device 100 and the gas shower head 400, the control valve 300 is, for example, a three-way valve, and the control unit 200 is electrically connected to the control valve 300 to control the opening and closing of three ports of the control valve 300. In an embodiment of the present invention, the control valve 300 includes a first port 301, a second port 302 and a third port 303, the first port 301 is communicated with the detecting device 100 through a pipeline 500, the second port 302 is communicated with the reference gas shower head 410 through a pipeline 500, and the third port 303 is communicated with the gas shower head 420 to be tested through a pipeline 500.
Referring to fig. 1 and 4, in an embodiment of the present invention, during deposition of a thin film or during etching, a worktable 800 including a gas pipeline is disposed above a wafer 700, and a plurality of gas showers 400 are uniformly disposed on the worktable 800, and the plurality of gas showers 400 are distributed around the wafer 700, so as to ensure that the overall thickness of the thin film deposited on the wafer 700 is uniform or the etching depth is consistent. In an embodiment of the present invention, the number of the gas showerheads 400 is set to 24 to 36, for example, and the plurality of gas showerheads 400 are symmetrically distributed along the circumference of the wafer 700. In an embodiment of the present invention, the gas shower head 400 is made of quartz, for example, and the aperture of the gas shower head 400 is 0.4mm to 0.5mm, for example, the apertures of the plurality of gas shower heads 400 are equal or different.
Referring to fig. 1 to 4, the present embodiment takes a deposition process as an example to explain the application of the above apparatus. Firstly, 36 gas spray heads are selected for film deposition, and the positions on the wafer 700 corresponding to the 36 gas spray heads 400 are respectively marked, such as 1-1, 1-2, 1-3 \8230 \, 12-1, 12-2, 12-3, and the like. In this example, the gas showerheads 400 at the 1-1, 1-3, 2-1, 2-3, 8230; 12-1 and 12-3 positions were selected to be fed with monosilane (SiH) 4 ) Gas, the gas shower head 400 at the 1-2, 2-2 \8230, 8230, and 12-2 positions is filled with oxygen (O) 2 ) Is deposited by
A thick silicon dioxide film. After the film deposition is finished, the wafer 700 is taken out and the film thicknesses of different positions are respectively detected, the actual film thicknesses of the positions 1-1, 1-3, 2-1 and 2-3 of the plurality of wafers 700 are counted, the gas flow rates of the gas spray heads 400 at the positions 1-1, 1-3, 2-1 and 2-3 \8230, 12-1 and 12-3 are respectively detected by using the device, and the gas flow rates corresponding to the different positions and the actual film thicknesses are made into a table 1.
Referring to FIGS. 1-4 and Table 1, the thickness of the film at the 1-3 locations on the wafer 700 is shown
Is closest to the preset film thickness>
The gas shower heads 400 at positions 1-3 are selected as the reference gas shower head 410, and the rest can be used as the gas shower heads 420 to be tested. In an embodiment of the present invention, when the control unit 200 adjusts the pressure inside the detection device 100 to a preset pressure, and the preset pressure is set to 50psi-80psi, for example, specifically, the preset pressure may be 50psi, for example, 60psi, for example, 80psi. The control unit 200 controls the first port 301 and the second port 302 to be opened, and the gas inlet 600 supplies a reference gas, such as N, to the reference gas shower head 410 2 . The gas inlet 600 communicates with the reference gas shower head 410, the gas flow rates of the gas inlet 600 and the reference gas shower head 410 are kept uniform, the gas flow rate of the reference gas shower head 410 depends on the hole diameter of the reference gas shower head 410, and the gas flow rate value displayed on the flow rate detection unit 110 at this time is recorded as P 0 The thickness of the film at the reference gas showerhead 410 was recorded as D 0 . The control unit 200 controls the preset pressure in the detection device 100 to be constant, and then the control unit 200 controls the second port 302 to be closed and controls the third port 303 to be opened, at which time the air inlet 600 is connected with the air inlet to be detectedThe gas shower head 420 is communicated, the gas flow rates of the gas at the positions on the passage between the gas inlet 600 and the gas shower head 420 are kept consistent, and the gas flow rate value displayed on the flow rate detection unit 110 at this time is recorded as P x Recording the thickness of the film at the showerhead 420 as D x . As can be seen from Table 1, the thickness D of the thin film at the showerhead 420 for the gas to be measured x Film thickness D of the reference gas shower head 410 0 Satisfies the relationship: d x ＝(P x /P 0 )*D 0 。
Referring to fig. 1 to 4 and table 1, in an embodiment of the present invention, the thickness of the film at 11-1 on the wafer 700 is
And a predetermined film thickness->
Differs therefrom by->
If the thickness of the film at the 11-1 position on the wafer 700 is larger, the gas shower head 420 to be tested at the 11-1 position on the wafer 700 can be replaced. The equipment is only needed to be used for detecting the flow of the replaced gas spray header, the gas spray header with the flow similar to the gas flow of the 3-1 reference gas spray header 410 is selected for replacement, convenience and rapidness are achieved, and the thickness difference of the films at all positions of the wafer 700 is controlled in a small range, so that the overall uniformity of the films is improved. Meanwhile, the problem that an engineer cannot accurately judge the actual flow of the spray header when adjusting the uniformity to cause multiple times of adjustment and test in the actual production process is solved, so that the manpower and time input in the production process are effectively reduced, and the production efficiency is effectively improved.
TABLE 1 gas flow and film thickness for different positions
To sum up, the utility model provides a pair of check out test set of gas shower head for semiconductor through set up flow detection unit and pressure detection unit between air inlet portion and shower head, carries out accurate detection to the gas flow of shower head. And selecting the reference spray header closest to the deposited preset film thickness by utilizing the linear relation between the gas flow of the spray headers at different positions on the wafer and the film thickness, detecting the gas flow of the reference spray header by utilizing the flow detection unit, and selecting the spray header with the flow close to the gas flow of the reference spray header for production, thereby ensuring the uniformity of the overall thickness of the deposited film and improving the reliability of the semiconductor device. The utility model provides an equipment operation is simple and the accuracy is high, only needs to carry out once to the gas flow of the shower head of changing and detects just can select and can deposit out and predetermine thick shower head to effectively reduce manpower and the time that drops into in the production process and effectively improve production efficiency.
The embodiment of the present invention disclosed above is only used to help illustrate the present invention. The examples are not intended to be exhaustive or to limit the invention to the precise forms disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical applications, to thereby enable others skilled in the art to best understand the invention for and utilize the invention. The present invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. The detection equipment of the gas spray header for the semiconductor is characterized by at least comprising,
an air intake portion;
the gas spray header is communicated with the gas inlet part through a pipeline;
the detection device is arranged between the gas inlet part and the gas spray header and is communicated with the pipeline;
the control valve is arranged between the detection device and the gas spray header; and
and the control unit is electrically connected with the detection device and the control valve.
2. The apparatus of claim 1, wherein the gas shower head comprises a reference gas shower head and a test gas shower head, and the reference gas shower head and the test gas shower head are disposed in parallel.
3. The inspection apparatus of a gas showerhead for a semiconductor as claimed in claim 1, wherein the control valve includes a first port communicating with the inspection unit through the pipe.
4. The apparatus of claim 2, wherein the control valve includes a second port, and the second port is in communication with the reference gas showerhead through the conduit.
5. The apparatus as claimed in claim 2, wherein the control valve includes a third port, and the third port is connected to the gas shower head through the pipe.
6. The inspection apparatus for a gas shower head for a semiconductor as claimed in claim 1, wherein said inspection device further comprises a sealing chamber, one end of said sealing chamber is communicated with said gas inlet portion, and the other end is communicated with said gas shower head.
7. The inspection apparatus for a gas shower head for a semiconductor as claimed in claim 6, wherein the inspection device includes a flow rate detection unit disposed on a sidewall of the sealing chamber and extending into the sealing chamber.
8. The inspection apparatus for a gas shower head for a semiconductor as claimed in claim 6, wherein said inspection device includes a pressure inspection unit disposed on a side wall of said sealed chamber and extending into said sealed chamber.
9. The apparatus of claim 7, wherein the flow sensing unit includes a flow sensor, and one end of the flow sensor extends into the sealed chamber.
10. The apparatus of claim 9, wherein the flow rate detecting unit includes a gauge panel, and the gauge panel is electrically connected to the flow rate sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223350158.0U CN218847609U (en) | 2022-12-14 | 2022-12-14 | Detection equipment of gas spray header for semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223350158.0U CN218847609U (en) | 2022-12-14 | 2022-12-14 | Detection equipment of gas spray header for semiconductor |
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| CN218847609U true CN218847609U (en) | 2023-04-11 |
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| CN202223350158.0U Active CN218847609U (en) | 2022-12-14 | 2022-12-14 | Detection equipment of gas spray header for semiconductor |
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