CN106756872A - A kind of high flux CVD prepares the device of siloxicon film - Google Patents
A kind of high flux CVD prepares the device of siloxicon film Download PDFInfo
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- CN106756872A CN106756872A CN201611192298.6A CN201611192298A CN106756872A CN 106756872 A CN106756872 A CN 106756872A CN 201611192298 A CN201611192298 A CN 201611192298A CN 106756872 A CN106756872 A CN 106756872A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Abstract
The invention belongs to filming equipment development field, specially a kind of high flux CVD prepares the device of siloxicon film.The present invention designs CVD deposition reaction chamber structure, using differential responses precursor gas (SiH based on high flux CVD coating techniques4, C2H4, O2) with N2It is carrier gas, controls its flow direction to be in the reaction chamber distributed, the graded of pre-reaction material concentration ratio is formed, so as to form the SiC of material composition change on substrate basexOyFilm combinations material.
Description
Technical field
The invention belongs to filming equipment development field, mainly by high throughput chemical vapour deposition (CVD) coating technique application
In the preparation of siloxicon film, in single coating process, heterogeneity siloxicon film material is realized on same substrate base
Prepared by the high flux of material, specially a kind of high flux CVD prepares the device of siloxicon film.
Background technology
Siloxicon (SiCxOy) thin-film material possesses carborundum (SiC) and silica (SiO2) similar characteristic, with very
Good heat endurance, with good mechanical strength, with band gap wide, fabulous optical property.These excellent characteristics make
Obtain siloxicon (SiCxOy) thin-film material in electronic applications, optical field there are fabulous industrial applications to be worth.Such as,
The K series low emissivity glass products of Pilkington companies just use SiCxOyThin-film material is used as transparent conductive oxide film layer
Separation layer and colour killing layer between glass.Its effect is to want the sodium ion in insulating glass to spill into transparent conductive oxide film
Layer, while suppressing the color saturation of film, makes product show muted color.
Used as ternary compound thin-film material, the specific refractivity of siloxicon can be with silicon-three kinds of carbon-oxygen constituent content
Change and change, i.e. the refractive index of siloxicon is adjustable, thus SiCxOyOxide film material has SiO2And SiC is not had
Superior optical characteristics.CVD coating techniques are to prepare SiCxOyOxide film material is specifically being plated than more conventional method
In membrane process, by adjusting material, ratio and the substrate temperature of pre-reaction material come to SiCxOyComposition is adjusted, from
And realize to SiCxOyThe regulation of refractive index.
But material, ratio and the SiC of pre-reaction material are studied using conventional CVD methodxOyThe composition of film than
Relation, its workload is very big, and operating efficiency is more low.
The content of the invention
There is problem or deficiency for above-mentioned, the invention provides the device that a kind of high flux CVD prepares siloxicon film,
By the method using high flux CVD, single coating process is realized, SiC is prepared on a single substratexOyComposition consecutive variations
The device of high flux sample, so as to improve SiCxOyThe efficiency of material composition research.
High flux CVD prepares the device of siloxicon film, including source of the gas, pipeline, mass flowmenter MFC, control valve,
CVD deposition reative cell, waste gas combustion furnace and emptying equipment.
Source of the gas includes three kinds of reacting gas (SiH4, C2H4, O2) and carrier gas (N2) four kinds, source of the gas is typically using the standard of 50L
Gas cylinder, 4 kinds of gases all use high-purity gas (purity is 99.999%), gas cylinder to be connected by pressure-reducing valve and pipeline.
Pipeline for gas transport pipeline, for connect MFC, control valve, CVD deposition reative cell, waste gas combustion furnace and
Emptying equipment.
MFC is used to control three kinds of reacting gas (SiH4, C2H4, O2) and carrier gas (N2) flow, MFC1 controls oxygen O2Stream
Amount, MFC2 control ethene C2H4Flow, MFC3 controls silane SiH4Flow, MFC4 controls carrier gas N2Import oxygen O2Stream
Amount, MFC5 control carrier gas N2Import ethene C2H4Flow, MFC6 controls carrier gas N2Import silane SiH4Flow, MFC7 control nitrogen
Gas N2As the flow of purge gas.
Control valve selects triple valve, 4 altogether, the flow direction for controlling gas；Triple valve 1 is used to control O2And N2's
Mixed gas flow into CVD deposition reative cell or are directly entered incinerator, and triple valve 2 is used to control C2H4And N2Mixed gas stream
Enter CVD deposition reative cell or be directly entered incinerator, triple valve 3 is used to control SiH4And N2Mixed gas flow into CVD deposition it is anti-
Answer room or be directly entered incinerator, purging triple valve 4 is used to control N2Flow into CVD deposition reative cell or be directly entered incinerator.
CVD deposition reative cell is mainly used in high flux SiCxOyThe chemical reaction deposit of thin-film material, its 26S Proteasome Structure and Function is pressed
Preparation requirement according to high flux sample carries out special preparation, and specific 26S Proteasome Structure and Function is described in detail later.
Waste gas combustion furnace is mainly used in burning reacting gas or reactor off-gas, is broken down into water, CO2、SiO2Deng to environment
Harmless composition.
Emptying equipment is used to enter the gas after burning in air, while so that whole pipe-line system is relative to atmospheric pressure
Faint negative pressure is produced, is beneficial to transporting for whole system air-flow.
Reacting gas enters CVD deposition reative cell, is reacted by high temperature deposition, and siloxicon composition is formed on substrate base
The thin-film material of graded.
CVD deposition reative cell is used for high flux SiCxOyThe chemical reaction deposit of thin-film material, including air inlet, high frequency sense
Answer coil, quartz glass tube, glass cover-plate, graphite matrix, substrate base and waste gas outlet.
Air inlet amounts to 3, respectively N2+O2Air inlet, N2+C2H4Air inlet, N2+SiH4Air inlet, three air inlets
The distance between two-by-two it is equal be 1/4 reaction chamber width, C2H4Air inlet is centrally located, O2、SiH4Air inlet respectively and
The reative cell side wall of correspondence homonymy, apart from equal, is also the width of 1/4 reaction chamber.
Radio-frequency induction coil provides high frequency induction current, is wound in quartz glass tube.
The width of a width of quartz glass bore of glass cover-plate, is adapted with quartz glass tube interior size, built-in solid
Due in quartz glass tube；Transmission space for controlling reacting gas, gas transport space is substrate base and glass cover-plate
Between space.
Graphite matrix is located at glass cover-plate side at its 1~10mm, and as high-frequency induction acceptor, in radio-frequency induction coil
Vortex flow is produced in the presence of circle high frequency electric and is heated rapidly, transfer thermal energy to heat it on substrate base.
Substrate base is located at the upper surface of graphite matrix, and is close to graphite matrix.
In specific operating process, first by fluid simulation software, the distribution that transports to three kinds of gases is simulated meter
Calculate, so as to form the SiC of reacting gas reduced concentration and depositionxOySilicon-carbon-oxygen concentration relativity in film combinations material,
To set up the database than more complete technique-composition-optical property.
Further, the pipeline uses stainless steel, and the pipeline before CVD deposition reative cell uses 1/8 inch pipe
Footpath, and the pipeline behind CVD deposition reative cell uses 1/2 inch of caliber.
Further, in the graphite matrix, thermocouple is also embedded in the position near substrate base, to determine prison
Survey the temperature of substrate base.
In actually used apparatus of the present invention, it is necessary first to by fluid simulation software, distribution is transported to three kinds of gas
It is simulated and calculates, so as to forms the SiC of reacting gas reduced concentration and depositionxOySilicon-carbon-oxygen is dense in film combinations material
Degree relativity, to set up the database than more complete technique-composition-optical property.
In the present invention, the main chemical reactions process of reacting gas is as follows, and reaction temperature is 600-800 DEG C of high temperature：
When reactive deposition temperature will influence three kinds of ratios of element in silicon-carbon-oxygen compound for three kinds of concentration of reacting gas
Example, the graded of concentration ratio is formed by controlling flow direction of three kinds of reacting gas in reaction chamber to be distributed, so as in lining
SiC of the siloxicon composition than graded is formed in bottom substratexOyBuiltup film material.
The present invention designs unique CVD deposition reaction chamber structure, ingenious utilization based on high flux CVD coating techniques
Differential responses precursor gas (silane SiH4, ethene C2H4, oxygen O2), with N2It is carrier gas, controls its stream in reaction chamber
To distribution, the graded of pre-reaction material concentration ratio is formed, so as to form material composition change on substrate base
SiCxOyFilm combinations material.
Brief description of the drawings
Fig. 1 apparatus of the present invention structural representations；
Fig. 2 embodiment CVD deposition reative cell cross-sectionals；
Fig. 3 embodiment CVD deposition reative cell top views；
Fig. 4 embodiment CVD deposition reative cell side views；
The obtained SiC of Fig. 5 present inventionxOyFilm combinations material schematic diagram；
Reference：1- substrate bases, 2- gas transports space, 3- quartz glass cover plates, 4- quartz glass tubes, 5- high frequencies
Induction coil, 6- graphite matrixs, 7,8,9 are respectively O2、C2H4、SiH4Air inlet, 10- waste gas outlets, 11-CVD deposition reactions
Room.
Specific embodiment
With embodiment combination accompanying drawing, the present invention is described in further detail below.
It is the substrate base of deposition to use fused silica glass, and this is primarily due to silicon-carbon-oxygen compound in deposition process
Depositing temperature higher is generally required, and the softening temperature of vitreous silica can reach more than 1000 DEG C, thus be SiCxOyFilm
The preferable substrate of material deposition, it is alternatively that can also be using plate glass as substrate base.
Reacting gas (O2, C2H4, SiH4) and carrier gas (N2) using 99.999% high-purity gas.Simultaneously in order to ensure CVD
The quality of deposition plating is, it is necessary to ensure there is fabulous seal between whole gas transport system and air.
As shown in Fig. 2 being the sectional view of CVD deposition reative cell, 5 is radio-frequency induction coil, and its material is copper tube, there is provided
High frequency induction current；4 is quartz glass tube, and radio-frequency induction coil 5 is wrapped quartz glass tube 4；6 is graphite matrix, is placed on
The side of quartz glass cover plate 3；Substrate base 1 is then placed on the upper surface of graphite matrix 6, and is close to.The conduct of graphite matrix 6
High-frequency induction acceptor, vortex flow is produced in the presence of the high frequency electric of radio-frequency induction coil 5 and is heated rapidly, and heat energy is transmitted
It is heated on to substrate base 1.In graphite matrix 6, thermocouple is embedded in the position near substrate base, so as to
The temperature of substrate base 1 is determined in experimentation.
3 is quartz glass cover plate, and in the middle of quartz glass pipeline, graphite matrix 6 is away from its 5mm, quartzy glass for fixed placement
The width of glass cover plate=quartz glass bore.The effect of glass cover-plate 3 is the gas transport space 2 for controlling reacting gas,
Gas transport space 2 is the upper surface of substrate base 1 to the space of the lower surface of quartz glass cover plate 3.
Fig. 3 is the top view of CVD deposition reative cell, and Fig. 4 is the side view of CVD deposition reative cell, and 7 is oxygen O2And carrier gas
N2Air inlet, 8 be ethene C2H4With carrier gas N2Air inlet, 9 be silane SiH4With carrier gas N2Air inlet.Reacting gas enters
The distance between gas port 7 and reacting gas air inlet 8 are the width of 1/4 reative cell, the air inlet 8 and reacting gas of reacting gas
The distance between air inlet 9 is the width of 1/4 reative cell, between the reative cell side wall that the air inlet 7 of reacting gas is adjacent to
Distance be 1/4 reative cell width, the distance between the reative cell side wall that the air inlet 9 of reacting gas is adjacent to is 1/4
The width of reative cell.Such inlet structure design, enables to three kinds of reacting gas oxygen O2, ethene C2H4, silane SiH4
During reactive deposition room is entered, the gradient distribution of reduced concentration between reacting gas is formed by phase counterdiffusion.Instead
Answer gas O2、C2H4And SiH4The gradient distribution of relative concentration can then cause the SiC deposited on substrate basexOyThin-film material composition
Than the trend that graded is presented, so that SiC of the forming component than presentation gradedxOyFilm combinations material.
10 is waste gas outlet for reacting gas tail gas, and waste gas gas outlet is funnel-shaped structure, near cvd reactive chamber one
The opening bore at end is consistent with cvd reactive chamber width, and it is the same to be gradually decrease to the bore of flue gas leading.Such waste gas outlet
Mouth structure design, be for reacting gas in reative cell flow to it is smoother, in order to avoid reacting gas flow direction gas outlet occur
Mutation, so as to influence thin film deposition quality.
Fig. 5 is SiCxOyFilm combinations material structure schematic diagram, from left end to right-hand member, three reacting gas air inlet difference
It is SiH4And N2Mixed gas, C2H4And N2Mixed gas, O2And N2Mixed gas (carrier gas is not shown), this will cause three kinds of gases
Reduced concentration shows from left to right graded, and the graded of reacting gas reduced concentration will cause on substrate base
Reactant shows graded.The SiC for ultimately formingxOyFilm combinations material, from left end to right-hand member, Si contents will gradually subtract
Less, C content will first increase and reduce afterwards, and O content then can gradually increase.
SiCxOyThe preparation process of film combinations material, comprises the following steps that：
(1) preparation
The substrate base that will be cleaned up is put on the graphite heating platform in coating chamber, and coating chamber is installed.
Open waste gas combustion furnace, and by its temperature be raised to 650 DEG C it is stand-by.
Water-cooling system is opened, high-frequency induction heating system is cooled down.
Open emptying to fan and connect air, for coating system provides faint negative pressure.
Open carrier gas mass flowmenter MFC7 and adjust its flow for 5L/min, regulation purging triple valve 4 allows carrier gas to pass through heavy
Product reative cell, it is ensured that substrate base is under the protection in nitrogen in heating process.
High frequency electric source is opened, deposition substrate is heated, heating-up temperature is 650 DEG C.
In the preparatory stage, it is ensured that reacting gas can not enter cvd reactive chamber, and need to adjust reacting gas triple valve
1st, triple valve 2, triple valve 3, make reacting gas be directly entered incinerator by triple valve.
(2) plated film is started
MFC4, MFC5, MFC6 are first opened, and adjusts its flow respectively for 2L/min.
MFC1 is opened, and adjusts its flow for 0.4L/min；MFC2 is opened, and adjusts its flow for 0.4L/min；Open
MFC3, and flow is adjusted for 0.1L/min.
Until after above steady air current, regulating three-way valve 1,2,3 causes that reacting gas and carrier gas enter reaction chamber, while
Purge gas are introduced directly into waste gas combustion furnace by regulating three-way valve 4.
Timing plated film is started simultaneously at, plated film time is 1min.
(3) plated film is completed
After the completion of plated film, regulating three-way valve 1,2,3 causes reacting gas and carrier gas is directly entered waste gas combustion furnace, while adjusting
Section triple valve 4 allows purge gas to enter reaction chamber.And high frequency electric source is closed, make substrate base natural cooling.
Close O2, C2H4, SiH4Valve, waits carrier gas purge to turn off within 2 minutes the valve of MFC4,5,6 later.
In sample cooling procedure, the flow of MFC7 is always maintained at for 5L/min, and keep N2All the time by reaction chamber
Room, until sample is cooled to less than 100 DEG C.
(4) sample
Membrane sample to be plated is cooled to room temperature state, closes waste gas combustion furnace, closes purge gas, closes ventilating fan, closes
Water-cooling system.
Coating chamber is opened, sample is taken out, and system is recovered as former state.
Parameter in above coating process can as needed carry out practical adjustments.
In sum, it is seen that the present invention has following technique effect：
(1) can be in single coating process, the SiC of prepare compound component gradient change on single substrate basexOyIt is thin
Film combined material.
(2) three air inlets are devised in reactive deposition room, O is each led into2, C2H4, SiH4Three kinds of reacting gas and load
Gas N2, the graded of relative concentration of three kinds of reacting gas in deposition reaction chamber is cleverly caused, and influence deposition thin
The composition of membrane material, forms the high flux SiC of siloxicon component gradient changexOyFilm combinations material.
(3) afterbody in reactive deposition room is designed to the triangle gas outlet gradually narrowed, and can very well reduce gas outlet pair
The effect of film formation of thin-film material behind substrate base.
(4) it is first theoretical by fluid simulation when using, calculate distribution of the reacting gas in reactive deposition chamber and close
System, so as to be mapped with the composition relation of thin-film material, that is, sets up the corresponding relation of technique-composition.
(5) method that substrate heating uses high-frequency induction heating, and using graphite as calandria, with firing rate
Hurry up, the characteristics of temperature is uniform, and belong to cold wall heating so that deposition reaction is occurred mainly on substrate base, is reduced to heavy
The pollution of product chamber interior walls, deposition efficiency is also higher.
(6) in reactive deposition room, we increased quartzy cover plate, can to reacting gas transport space and flow into
Row control well.
(7) in the tail end of system, organic matter effectively can be changed into inorganic matter by device waste gas combustion furnace, thus
It is a kind of environment amenable device.
Claims (4)
1. a kind of high flux CVD prepares the device of siloxicon film, including source of the gas, pipeline, mass flowmenter MFC, control valve,
CVD deposition reative cell, waste gas combustion furnace and emptying equipment, it is characterised in that：
Source of the gas includes reacting gas and carrier gas, and reacting gas is respectively silane SiH4, ethene C2H4With oxygen O2, carrier gas is nitrogen
N2, its chemical reaction process is as follows, and reaction temperature is 600-800 DEG C of high temperature：
The graded that three kinds of reacting gas flowing in CVD deposition reative cell are distributed and are formed concentration ratio, so as in substrate
SiC of the siloxicon composition than graded is formed on substratexOyFilm combinations material；
Pipeline is the transport pipeline of gas, for connecting MFC, control valve, CVD deposition reative cell, waste gas combustion furnace and emptying
Equipment；
MFC amounts to 7, the flow for controlling source of the gas；MFC1 controls O2Flow, MFC2 controls C2H4Flow, MFC3 control
SiH4Flow, MFC4 control N2Import O2Flow, MFC5 control N2Import C2H4Flow, MFC6 control N2Import SiH4's
Flow, MFC7 controls N2As the flow of purge gas；
Control valve selects triple valve, 4 altogether, the flow direction for controlling gas；Triple valve 1 is used to control O2And N2Mixing
Gas flows into CVD deposition reative cell or is directly entered incinerator, and triple valve 2 is used to control C2H4And N2Mixed gas flow into CVD
Cvd reactive chamber is directly entered incinerator, and triple valve 3 is used to control SiH4And N2Mixed gas flow into CVD deposition reative cell
Or incinerator is directly entered, purging triple valve 4 is used to control N2Flow into CVD deposition reative cell or be directly entered incinerator.
Waste gas combustion furnace is used to burn reacting gas or reactor off-gas, is broken down into water, CO2、SiO2Deng environmental sound into
Point；
Emptying equipment is used to enter the gas after burning in air, while so that whole pipe-line system is produced relative to atmospheric pressure
Faint negative pressure, is beneficial to transporting for whole device air-flow.
Reacting gas enters CVD deposition reative cell, and the film material to form the change of siloxicon component gradient is reacted by high temperature deposition
Material；
The CVD deposition reative cell is used for high flux SiCxOyThe chemical reaction deposit of film combinations material, including air inlet, height
Frequency induction coil, quartz glass tube, glass cover-plate, graphite matrix, substrate base and waste gas outlet；
Air inlet amounts to 3, respectively N2+O2Air inlet, N2+C2H4Air inlet, N2+SiH4Air inlet, between three air inlets
Distance two-by-two it is equal be 1/4 reaction chamber width, N2+C2H4Air inlet is centrally located, N2+O2、N2+SiH4Air inlet difference
With correspondence homonymy reative cell side wall apart from equal, be also the width of 1/4 reaction chamber；
Radio-frequency induction coil provides high frequency induction current, is wound in quartz glass tube；
The width of a width of quartz glass bore of glass cover-plate, is adapted with quartz glass tube interior size, built-in to be fixed on
In quartz glass tube；Transmission space for controlling reacting gas, gas transport space is between substrate base and glass cover-plate
Space；
Graphite matrix is located at glass cover-plate side at its 1~10mm, high in radio-frequency induction coil and as high-frequency induction acceptor
Vortex flow is produced in the presence of frequency electric current and is heated rapidly, transfer thermal energy to heat it on substrate base；
Substrate base is located at the upper surface of graphite matrix, and is close to graphite matrix.
Waste gas outlet is funnel-shaped structure, consistent with cvd reactive chamber width in the bore near CVD deposition reative cell one end, and
It is gradually decrease to the bore of pipeline.
2. high flux CVD as claimed in claim 1 prepares the device of siloxicon film, it is characterised in that：The pipeline is not using
Rust steel matter, the pipeline before CVD deposition reative cell uses 1/8 inch of caliber, and the pipeline after CVD deposition reative cell uses 1/
2 inches of calibers.
3. high flux CVD as claimed in claim 1 prepares the device of siloxicon film, it is characterised in that：In the graphite matrix,
Thermocouple is also embedded in the position near substrate base, to determine the temperature of monitoring substrate base.
4. high flux CVD as claimed in claim 1 prepares the device of siloxicon film, it is characterised in that：It is first when actually used
First need by fluid simulation software, the distribution that transports to three kinds of gases is simulated calculating, so as to form reacting gas contrast
The SiC of concentration and depositionxOySilicon-carbon-oxygen concentration relativity in film combinations material, to set up than more complete work
The database of skill-composition-optical property.
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Cited By (4)
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| CN107338424A (en) * | 2017-08-07 | 2017-11-10 | 苏州阿特斯阳光电力科技有限公司 | A kind of gas control method and equipment of PECVD plated films |
| CN108411282A (en) * | 2018-05-18 | 2018-08-17 | 中国科学院宁波材料技术与工程研究所 | High-throughput CVD device and its deposition method |
| CN110176414A (en) * | 2019-04-16 | 2019-08-27 | 北京北方华创微电子装备有限公司 | Reaction gas supply system and its control method |
| CN114293173A (en) * | 2021-12-17 | 2022-04-08 | 厦门钨业股份有限公司 | Device for carbon-doped chemical vapor deposition of tungsten coating |
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