CN116254597A - Plasma doped silicon carbide crystal growing furnace - Google Patents
Plasma doped silicon carbide crystal growing furnace Download PDFInfo
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- CN116254597A CN116254597A CN202310283140.3A CN202310283140A CN116254597A CN 116254597 A CN116254597 A CN 116254597A CN 202310283140 A CN202310283140 A CN 202310283140A CN 116254597 A CN116254597 A CN 116254597A
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- silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention provides a plasma doped silicon carbide crystal growth furnace, and relates to the technical field of silicon carbide crystal growth. The plasma doped silicon carbide crystal growth furnace comprises a vacuum cavity, a graphite crucible, an ionization cavity and a plurality of air inlet branches, wherein the graphite crucible is arranged in the vacuum cavity, and silicon carbide powder is loaded in the graphite crucible; the ionization cavity is communicated to the vacuum cavity through an air inlet pipe; each air inlet branch is provided with a first control valve and a mass flow controller according to the flow direction of air flow, wherein the two air inlet branches are used for respectively introducing carbon-containing gas and silicon-containing gas with required flow, and the ionization cavity is used for ionizing carbon ions from the carbon-containing gas and silicon ions from the silicon-containing gas, inputting the carbon-containing gas and the silicon ions into the vacuum cavity and diffusing the carbon-containing gas into the graphite crucible. Thus, the concentration ratio of carbon to silicon is precisely controlled in the process of growing the crystal in the plasma doped silicon carbide crystal growing furnace, the uniformity of the crystal growing quality is ensured, and the yield of the grown crystal is improved.
Description
Technical Field
The invention relates to the technical field of silicon carbide crystal growth, in particular to a plasma doped silicon carbide crystal growth furnace.
Background
In the conventional growth process of silicon carbide seed crystals, a method of heating silicon carbide powder for crystal growth by a crystal growth furnace is generally adopted. However, in the process of growing the crystals, since the sublimation temperatures of carbon and silicon are different, and the concentration ratio of sublimated carbon to silicon is different in different time intervals, in the process of growing the crystals for 140 hours, the concentration ratio of carbon to silicon is difficult to accurately grasp, and the uniformity of the quality of the grown crystals is difficult to ensure, so that the yield of the grown crystals is difficult to improve.
Disclosure of Invention
The invention aims to provide a plasma doped silicon carbide crystal growing furnace which can accurately grasp the concentration ratio of carbon to silicon in the crystal growing process, ensure the consistency of crystal growing quality and improve the yield of crystal growing.
Embodiments of the invention may be implemented as follows:
the invention provides a plasma doped silicon carbide crystal growth furnace, which comprises:
a vacuum chamber;
the graphite crucible is arranged in the vacuum cavity and is filled with silicon carbide powder;
the ionization cavity is communicated with the vacuum cavity through an air inlet pipe;
the device comprises a plurality of air inlet branches, wherein a first control valve and a mass flow controller are arranged on each air inlet branch according to the flow direction of air flow, the two air inlet branches are used for respectively introducing carbon-containing gas and silicon-containing gas with required flow, and an ionization cavity is used for ionizing carbon ions from the carbon-containing gas, silicon ions from the silicon-containing gas, inputting the carbon-containing gas into a vacuum cavity and diffusing the carbon-containing gas into a graphite crucible.
The plasma doped silicon carbide crystal growth furnace provided by the invention has the beneficial effects that:
the method has the advantages that the concentration ratio of carbon to silicon in the vacuum cavity is detected in real time, the two air inlet branches are utilized to respectively introduce carbon-containing gas and silicon-containing gas with required flow rates, the respective amounts of the introduced carbon-containing gas and silicon-containing gas can be accurately controlled through the first control valve and the mass flow controller, in the ionization cavity, carbon ions are ionized in the carbon-containing gas, silicon ions are ionized in the silicon-containing gas, and the carbon ions and the silicon ions enter the graphite crucible to participate in crystal growth, so that the concentration ratio of carbon to silicon in the graphite crucible can be accurately mastered in the crystal growth process, the uniformity of crystal growth quality is ensured, and the crystal growth yield is improved.
In an alternative embodiment, the number of inlet branches is three, wherein one inlet branch is used for introducing the doping gas and the other two inlet branches are used for introducing methane and silane respectively.
Thus, methane (CH) 4 ) The silicon-containing gas is Silane (SiH) 4 ) And the two air inlet branches are respectively led into the ionization cavity, so that the respective amounts of carbon and silicon entering the vacuum cavity can be accurately controlled, and the doping gas is led into the air inlet branch, so that the amount of the doping gas entering the vacuum cavity can be further accurately controlled.
In an alternative embodiment, the plasma doped silicon carbide growth furnace further comprises:
the diffusion plate is arranged in the vacuum cavity and positioned between the air inlet of the vacuum cavity and the graphite crucible, and vent holes are uniformly distributed on the diffusion plate and used for allowing gas transmitted by the air inlet branch to pass through.
Therefore, the gas transmitted from the gas inlet pipe can be uniformly diffused to one side of the graphite crucible through the diffusion plate, and the uniformity of the gas diffusion entering the graphite crucible is improved.
In an alternative embodiment, the diffuser plate has a diameter equal to the inside diameter of the vacuum chamber.
Thus, the diffusion plate can diffuse all the gas entering the vacuum cavity, and the uniformity of the gas is improved.
In an alternative embodiment, the plasma doped silicon carbide growth furnace further comprises:
the vacuum pump is communicated to the vacuum cavity through the exhaust pipe and is used for exhausting the vacuum cavity.
In an alternative embodiment, the exhaust pipe is communicated with the bottom of the vacuum cavity, and the air inlet pipe is communicated with the top of the vacuum cavity.
Thus, the vacuum pump is positioned at the downstream of the gas flow direction in the vacuum cavity, which is beneficial to the vacuum pump to efficiently vacuumize the vacuum cavity.
In an alternative embodiment, the plasma doped silicon carbide crystal growth furnace further comprises a radio frequency power supply and a radio frequency matcher, wherein the radio frequency power supply, the radio frequency matcher and the ionization cavity are sequentially connected.
Therefore, the ionization device for the carbon-containing gas and the silicon-containing gas has simple structure and convenient control.
In an alternative embodiment, a second control valve is also provided at the outlet of the mass flow controller on the intake branch.
Thus, when the air inlet pipeline does not need air inlet, the first control valve and the second control valve are closed simultaneously, so that the mass flow controller can be protected, and the mass flow controller can accurately detect the air inlet amount during air inlet.
In an alternative embodiment, the inlet and outlet of the inlet pipe are provided with a third control valve and a fourth control valve, respectively.
Therefore, when the vacuum cavity does not need to be charged, the third control valve and the fourth control valve are closed at the same time, so that the vacuum cavity and the ionization cavity can be protected.
In an alternative embodiment, the plasma doped silicon carbide growth furnace further comprises:
the barrel-type graphite heater is arranged in the vacuum cavity, and the graphite crucible is positioned in the barrel-type graphite heater.
Thus, the upper end and the lower end of the barrel-shaped graphite heater are both provided with openings, which is beneficial to the gas in the vacuum cavity to flow from top to bottom, and the gas outside the barrel-shaped graphite heater can also diffuse into the graphite crucible through the side wall of the barrel-shaped graphite heater.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a plasma doped silicon carbide crystal growth furnace according to an embodiment of the present invention.
Icon: a 100-plasma doped silicon carbide crystal growth furnace; 1-a vacuum cavity; 2-gas analyzer; 3-a diffusion plate; 31-vent holes; 4-barrel graphite heater; 5-graphite crucible; 6-a radio frequency power supply; 7-a radio frequency matcher; 8-an air inlet pipe; 9-ionization chamber; 10-an air inlet branch; 11-a first control valve; 12-mass flow controller; 13-a second control valve; 14-a third control valve; 15-a fourth control valve; 16-exhaust pipe; 17-vacuum pump.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1, the dashed arrow in fig. 1 indicates the flow direction of the gas flow, and the present embodiment provides a plasma doped silicon carbide growth reactor 100, where the plasma doped silicon carbide growth reactor 100 includes a vacuum chamber 1, a gas analyzer 2, a diffusion plate 3, a barrel-type graphite heater 4, a vacuum pump 17, a graphite crucible 5, a radio frequency power supply 6, a radio frequency matcher 7, an ionization chamber 9, and a plurality of gas inlet branches 10.
Specifically, the vacuum chamber 1 is subjected to a grounding process. A graphite crucible 5 is provided in the vacuum chamber 1, and silicon carbide powder (not shown) is loaded in the graphite crucible 5. The ionization chamber 9 is connected to the top of the vacuum chamber 1 through an air inlet pipe 8. The radio frequency power supply 6, the radio frequency matcher 7 and the ionization cavity 9 are sequentially connected, the radio frequency power supply 6 is grounded, and the power of the radio frequency power supply 6 can be 1000W and the frequency is 13.56MHz. Therefore, the ionization device has simple structure and convenient control.
The vacuum pump 17 is communicated to the bottom of the vacuum cavity 1 through the exhaust pipe 16, and the vacuum pump 17 is used for exhausting the vacuum cavity 1. The exhaust pipe 16 is communicated with the bottom of the vacuum cavity 1, the air inlet pipe 8 is communicated with the top of the vacuum cavity 1, and the air inlet pipe 8 and the exhaust pipe 16 can be SUS316L gas conveying pipelines. In this way, the vacuum pump 17 is located downstream of the gas flow direction in the vacuum chamber 1, which is advantageous for the vacuum pump 17 to efficiently evacuate the vacuum chamber 1.
A gas analyzer 2 (RGA) is installed on the vacuum chamber 1, and the gas analyzer 2 is used to detect the contents of various gases in the vacuum chamber 1, so that the concentration ratio of sublimated carbon to silicon in the vacuum chamber 1 can be determined in real time.
Each air inlet branch 10 is provided with a first control valve 11, a mass flow controller 12 and a second control valve 13 according to the flow direction of air, wherein the two air inlet branches 10 are used for respectively introducing carbon-containing gas and silicon-containing gas with required flow rates, and the ionization cavity 9 is used for ionizing carbon ions from the carbon-containing gas and silicon ions from the silicon-containing gas, inputting the carbon-containing gas into the vacuum cavity 1 and diffusing the carbon-containing gas into the graphite crucible 5. Like this, carbon ion and silicon ion get into graphite crucible 5 and participate in the long brilliant, like this, can in time supply carbon or silicon to vacuum cavity 1 in the in-process of long brilliant, just can accurately grasp the concentration ratio of carbon and silicon in graphite crucible 5, ensure the uniformity of long brilliant quality, improve the yield of long brilliant. When the air inlet pipe 8 does not need air inlet, the first control valve 11 and the second control valve 13 are closed at the same time, so that the mass flow controller 12 can be protected, and the mass flow controller 12 can accurately detect the air inlet amount during air inlet.
In this embodiment, the number of the air inlet branches 10 is three, wherein one air inlet branch 10 is used for introducing doping gas, and the other two air inlet branches 10 are used for introducing methane and silane respectively. Thus, methane (CH) 4 ) The silicon-containing gas is Silane (SiH) 4 ) And respectively pass through two air inlet branches 10 and let in ionization cavity 9, be convenient for accurate control get into vacuum cavity 1 in the respective quantity of carbon and silicon, and the doping gas is let in through an air inlet branch 10 again, just further accurate control gets into the volume of doping gas in the vacuum cavity 1. Wherein the doping gas comprises argon and nitrogen.
The inlet and outlet of the inlet pipe 8 are provided with a third control valve 14 and a fourth control valve 15, respectively. In this way, closing the third control valve 14 and the fourth control valve 15 simultaneously can protect the vacuum chamber 1 and the ionization chamber 9 when the vacuum chamber 1 does not require air intake.
The diffusion plate 3 is arranged in the vacuum cavity 1 and is positioned between the air inlet of the vacuum cavity 1 and the graphite crucible 5, and vent holes 31 are uniformly distributed on the diffusion plate 3, and the vent holes 31 are used for allowing the gas transmitted by the air inlet branch 10 to pass through. The diameter of the diffusion plate 3 is equal to the inner diameter of the vacuum chamber 1. Thus, the gas from the gas inlet pipe 8 can be uniformly diffused to the side of the graphite crucible 5 through the diffusion plate 3, and the uniformity of the gas diffusion into the graphite crucible 5 is improved.
The barrel-type graphite heater 4 is provided in the vacuum chamber 1, and the graphite crucible 5 is located inside the barrel-type graphite heater 4. The upper and lower ends of the barrel-shaped graphite heater 4 are both provided with openings, which is beneficial to the gas in the vacuum cavity 1 to flow from top to bottom, and the gas outside the barrel-shaped graphite heater 4 can also diffuse into the graphite crucible 5 through the side wall of the barrel-shaped graphite heater 4.
The plasma doped silicon carbide crystal growth furnace 100 provided in this embodiment has the following beneficial effects:
1. the gas analyzer 2 is used for detecting the content of various gases in the vacuum cavity 1 in real time, detecting the concentration ratio of carbon to silicon in the vacuum cavity in real time, and according to the required ideal concentration ratio of carbon to silicon, respectively introducing carbon-containing gas and silicon-containing gas with required flow rates through the two air inlet branches 10, and accurately controlling the respective amounts of the introduced carbon-containing gas and silicon-containing gas through the first control valve 11 and the mass flow controller 12, wherein in the ionization cavity 9, carbon ions are ionized in the carbon-containing gas, silicon ions are ionized in the silicon-containing gas, and the carbon ions and silicon ions enter the graphite crucible 5 to participate in crystal growth, so that the concentration ratio of carbon to silicon in the graphite crucible 5 can be accurately mastered in the crystal growth process, the consistency of crystal growth quality is ensured, and the crystal growth yield is improved;
2. methane (CH) is used as the carbon-containing gas 4 ) The silicon-containing gas is Silane (SiH) 4 ) The doping gas is introduced into the ionization cavity 9 through the two air inlet branches 10, so that the respective amounts of carbon and silicon entering the vacuum cavity 1 can be accurately controlled, and the doping gas entering the vacuum cavity 1 can be further accurately controlled through the one air inlet branch 10;
3. the gas transmitted from the gas inlet pipe 8 can be uniformly diffused to one side of the graphite crucible 5 through the diffusion plate 3, so that the uniformity of the gas diffusion into the graphite crucible 5 is improved.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. A plasma doped silicon carbide growth reactor, the plasma doped silicon carbide growth reactor comprising:
a vacuum chamber (1);
a graphite crucible (5) disposed in the vacuum chamber (1), wherein silicon carbide powder is loaded in the graphite crucible (5);
the ionization cavity (9) is communicated with the vacuum cavity (1) through an air inlet pipe (8);
the graphite crucible comprises a plurality of air inlet branches (10), wherein a first control valve (11) and a mass flow controller (12) are arranged on each air inlet branch (10) according to the airflow direction, two air inlet branches (10) are used for respectively introducing carbon-containing gas and silicon-containing gas with required flow, and an ionization cavity (9) is used for ionizing carbon ions from the carbon-containing gas, ionizing silicon ions from the silicon-containing gas, inputting the carbon-containing gas into a vacuum cavity (1) and diffusing the carbon-containing gas into the graphite crucible (5).
2. The plasma doped silicon carbide growth furnace according to claim 1, wherein the number of the gas inlet branches (10) is three, wherein one gas inlet branch (10) is used for introducing doping gas, and the other two gas inlet branches (10) are used for introducing methane and silane respectively.
3. The plasma doped silicon carbide growth furnace of claim 1, further comprising:
the diffusion plate (3) is arranged in the vacuum cavity (1) and is positioned between the air inlet of the vacuum cavity (1) and the graphite crucible (5), vent holes (31) are uniformly distributed in the diffusion plate (3), and the vent holes (31) are used for allowing gas transmitted by the air inlet branch (10) to pass through.
4. A plasma doped silicon carbide growth furnace according to claim 3, characterized in that the diameter of the diffusion plate (3) is equal to the inner diameter of the vacuum chamber (1).
5. The plasma doped silicon carbide growth furnace of claim 1, further comprising:
and the vacuum pump (17) is communicated with the vacuum cavity (1) through an exhaust pipe (16), and the vacuum pump (17) is used for exhausting the vacuum cavity (1).
6. The plasma doped silicon carbide crystal growth furnace according to claim 5, wherein the exhaust pipe (16) is communicated with the bottom of the vacuum cavity (1), and the air inlet pipe (8) is communicated with the top of the vacuum cavity (1).
7. The plasma doped silicon carbide crystal growth furnace according to claim 1, further comprising a radio frequency power supply (6) and a radio frequency matcher (7), wherein the radio frequency power supply (6), the radio frequency matcher (7) and the ionization cavity (9) are connected in sequence.
8. A plasma doped silicon carbide growth furnace according to claim 1, characterized in that a second control valve (13) is also provided at the outlet of the mass flow controller (12) on the inlet branch (10).
9. The plasma doped silicon carbide growing furnace according to claim 1, characterized in that the inlet and outlet of the inlet pipe (8) are provided with a third control valve (14) and a fourth control valve (15), respectively.
10. The plasma doped silicon carbide growth furnace of claim 1, further comprising:
and the barrel-shaped graphite heater (4) is arranged in the vacuum cavity (1), and the graphite crucible (5) is positioned in the barrel-shaped graphite heater (4).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310283140.3A CN116254597A (en) | 2023-03-22 | 2023-03-22 | Plasma doped silicon carbide crystal growing furnace |
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| CN202310283140.3A CN116254597A (en) | 2023-03-22 | 2023-03-22 | Plasma doped silicon carbide crystal growing furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116453925A (en) * | 2023-06-16 | 2023-07-18 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
| CN117187961A (en) * | 2023-09-21 | 2023-12-08 | 通威微电子有限公司 | Pneumatic feeding crystal growth equipment and method |
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| US8858709B1 (en) * | 2006-04-11 | 2014-10-14 | Ii-Vi Incorporated | Silicon carbide with low nitrogen content and method for preparation |
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| US8858709B1 (en) * | 2006-04-11 | 2014-10-14 | Ii-Vi Incorporated | Silicon carbide with low nitrogen content and method for preparation |
| US20080072817A1 (en) * | 2006-09-26 | 2008-03-27 | Ii-Vi Incorporated | Silicon carbide single crystals with low boron content |
| CN202643920U (en) * | 2012-05-24 | 2013-01-02 | 北京普纳森电子科技有限公司 | Gas diffusion homogenizing device and plasma process equipment by using gas diffusion homogenizing device |
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| CN116453925A (en) * | 2023-06-16 | 2023-07-18 | 通威微电子有限公司 | Magnetic control enhanced plasma polishing device |
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| CN117187961A (en) * | 2023-09-21 | 2023-12-08 | 通威微电子有限公司 | Pneumatic feeding crystal growth equipment and method |
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