KR102137886B1 - Low Pressure chemical vapor deposition system for hexagonal boron nitride growth - Google Patents

Low Pressure chemical vapor deposition system for hexagonal boron nitride growth Download PDF

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KR102137886B1
KR102137886B1 KR1020180128708A KR20180128708A KR102137886B1 KR 102137886 B1 KR102137886 B1 KR 102137886B1 KR 1020180128708 A KR1020180128708 A KR 1020180128708A KR 20180128708 A KR20180128708 A KR 20180128708A KR 102137886 B1 KR102137886 B1 KR 102137886B1
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precursor
chamber
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전민현
박민정
김민엽
배윤경
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인제대학교 산학협력단
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

본발명은 h-BN 성장용 LPCVD 시스템에 관한 것으로, h-BN이 성장 공정이 진행 가능하도록 반응 공간을 제공하는 메인 퀄츠 튜브, 상기 튜브의 내부 공간에 로딩 되는 금속 촉매가 탑재되는 스테이지, 상기 금속 촉매 표면에 증착될 반응 가스가 퀄츠 튜브 내부 공간으로 공급되도록 튜브의 in-let에 설치되는 1, 2채널의 두 채널의 가스 공급관으로 이루어지되, 상기 가스 공급관의 1-채널은 h-BN이 성장을 위한 캐리어 가스가 공급되는 라인이며, 2-채널은 h-BN의 precursor로 작용하는 Ammonia borane 소스가 공급되는 라인인 것으로,
본발명은 solid 소스를 로딩 할 수 있는 부분과 저압 CVD 시스템이 분리 되어 있어서 precursor 챔버만 개별로 다룰 수 있고, solid 소스의 정확한 온도를 측정할 수 있으며, solid 소스를 증발시킬 수 있는 precursor 챔버 전체에 일정하게 열을 가할 수 있고, 저압 CVD 메인 챔버로 들어가는 라인 내에도 line-heating belt를 장착하여 외부의 온도변화에 큰영향을 받지 않으며, 또한 사용자가 CVD 메인 챔버와는 별개로 precursor 챔버 내의 진공도를 체크할 수 있는 현저한 효과가 있다.The present invention relates to an LPCVD system for h-BN growth, a main quartz tube in which h-BN provides a reaction space to allow a growth process to proceed, a stage on which a metal catalyst loaded into the inner space of the tube is mounted, the metal The reaction gas to be deposited on the surface of the catalyst is composed of two channels of gas supply pipes installed in the in-let of the tube so that the reaction gas to be supplied to the inner space of the quartz tube, but the 1-channel of the gas supply pipe grows h-BN The carrier gas for the supply line, the 2-channel is a line supplied with the source of Ammonia borane acting as a precursor of h-BN,
In the present invention, since the part capable of loading the solid source and the low-pressure CVD system are separated, only the precursor chamber can be individually handled, the accurate temperature of the solid source can be measured, and the entire precursor chamber capable of evaporating the solid source. Constant heat can be applied, and a line-heating belt is installed in the line entering the low-pressure CVD main chamber so that it is not greatly affected by external temperature changes, and the user can also adjust the vacuum level in the precursor chamber separately from the CVD main chamber. There is a remarkable effect that can be checked.

Description

h-BN 성장용 LPCVD 시스템 { Low Pressure chemical vapor deposition system for hexagonal boron nitride growth }LPCVD system for h-BN growth {Low Pressure chemical vapor deposition system for hexagonal boron nitride growth}

본발명은 h-BN 성장용 LPCVD 시스템에 관한 것으로, h-BN이 성장 공정이 진행 가능하도록 반응 공간을 제공하는 메인 퀄츠 튜브, 상기 튜브의 내부 공간에 로딩 되는 금속 촉매가 탑재되는 스테이지, 상기 금속 촉매 표면에 증착될 반응 가스가 퀄츠 튜브 내부 공간으로 공급되도록 튜브의 in-let에 설치되는 1, 2채널의 두 채널의 가스 공급관으로 이루어지되, 상기 가스 공급관의 1-채널은 h-BN이 성장을 위한 캐리어 가스가 공급되는 라인이며, 2-채널은 h-BN의 precursor로 작용하는 Ammonia borane 소스가 공급되는 라인인 것으로, 상기 solid 소스를 로딩 할 수 있는 부분과 저압 CVD 시스템이 분리 되어 있어서 precursor 챔버만 개별로 다룰 수 있고, solid 소스의 정확한 온도를 측정할 수 있으며, solid 소스를 증발시킬 수 있는 precursor 챔버 전체에 일정하게 열을 가할 수 있고, 저압 CVD 메인 챔버로 들어가는 라인 내에도 line-heating belt를 장착하여 외부의 온도변화에 큰영향을 받지 않으며, 또한 사용자가 CVD 메인 챔버와는 별개로 percussor 챔버 내의 진공도를 체크할 수 있는 h-BN 성장용 LPCVD 시스템에 관한 것이다.The present invention relates to an LPCVD system for h-BN growth, a main quartz tube in which h-BN provides a reaction space to allow a growth process to proceed, a stage on which a metal catalyst loaded into the inner space of the tube is mounted, the metal The reaction gas to be deposited on the surface of the catalyst is composed of two channels of gas supply pipes installed in the in-let of the tube so that the reaction gas to be supplied to the inner space of the quartz tube, but the 1-channel of the gas supply pipe grows h-BN The carrier gas is supplied to the line, and the 2-channel is the line to which the Ammonia borane source acting as the precursor of h-BN is supplied. The part capable of loading the solid source and the low-pressure CVD system are separated, so the precursor Only the chamber can be handled individually, the exact temperature of the solid source can be measured, constant heat can be applied to the entire precursor chamber that can evaporate the solid source, and line-heating is even within the line entering the low pressure CVD main chamber. It relates to an LPCVD system for h-BN growth that is equipped with a belt and is not greatly affected by external temperature changes, and also allows a user to check the vacuum in the percussor chamber independently of the CVD main chamber.

일반적으로 여러 가지의 박막 증착 및 성장을 위해서는 주로 화학 기상 증착(CVD; Chemical Vapor Deposition)법이 이용된다.In general, chemical vapor deposition (CVD) is mainly used for various types of thin film deposition and growth.

종래기술로서, 등록특허공보 등록번호 10-1308523호에는 CVD(chemical vapour deposition) 챔버 내로 가스들을 주입하기 위한 가스 인젝터로서, 상기 가스 인젝터는 하나 이상의 가스-운반 도관들을 포함하며, 각각의 가스-운반 도관은 상기 가스-운반 도관을 통하는 유동 경로를 따라 가스 입구 포트로부터 하나 이상의 가스 출구 포트들로 가스들을 운반하기 위한 것이며, 상기 하나 이상의 가스-운반 도관들은 수동적으로 또는 능동적으로 가열되는, 가스 인젝터가 공개되어 있다.As a prior art, Patent No. 10-1308523 discloses a gas injector for injecting gases into a chemical vapor deposition (CVD) chamber, wherein the gas injector includes one or more gas-carrying conduits, each gas-carrying A conduit is for transporting gases from a gas inlet port to one or more gas outlet ports along a flow path through the gas-carrying conduit, wherein the one or more gas-carrying conduits are passively or actively heated, where the gas injector is Is open.

또한, 공개특허공보 공개번호 10-2016-0106169호에는 CVD 프로세스를 실행하기 위한 장치로서, 반응기 하우징 내에 배열되고, 프로세스 챔버에 대면하는 가스출구 플레이트를 포함하는 가스 입구 요소를 포함하며, 상기 가스 출구 플레이트는 상기 가스 입구 요소 내에 배열된 가스 분배 용적부로부터 프로세스 가스들이 공급되는 복수의 가스 출구 개구들 및 다공질 재료를 포함하는, CVD 프로세스를 실행하기 위한 장치에 있어서, 상기 다공질 재료는 상기 가스 출구 플레이트의 코어를 형성하고, 상기 프로세스 가스와 접촉하는 상기 코어의 표면 세그먼트들이 밀봉되는 것을 특징으로 하는 CVD 프로세스를 실행하기 위한 장치가 공개되어 있다.In addition, Publication No. 10-2016-0106169, an apparatus for performing a CVD process, includes a gas inlet element arranged in a reactor housing and comprising a gas outlet plate facing the process chamber, wherein the gas outlet A plate comprising a porous material and a plurality of gas outlet openings through which process gases are supplied from a gas distribution volume arranged in the gas inlet element, wherein the porous material is the gas outlet plate An apparatus for performing a CVD process is disclosed, characterized in that the surface segments of the core forming the core of and contacting the process gas are sealed.

상기 CVD법은 화학 소스를 가스 상태로 장치 내에 공급하여 웨이퍼 표면상에서 확산을 일으킴으로써 유전체막, 도전막 및 반도전막 등을 여러 가지 기판 위에 증착시키는 기술이다. 이러한 CVD법은 통상 장치 내의 압력에 따라 저압 CVD (LPCVD; Low Pressure CVD), 상압 CVD (APCVD; Atmospheric Pressure CVD)로 구분하고, 그 외에도 플라즈마 CVD (PECVD; Plasma Enhanced CVD) 및 광여기 CVD 등이 일반적으로 사용되고 있다.The CVD method is a technique of depositing a dielectric film, a conductive film and a semiconducting film on various substrates by supplying a chemical source into a device in a gas state to cause diffusion on a wafer surface. These CVD methods are generally classified into low pressure CVD (LPCVD) and atmospheric pressure CVD (APCVD) according to the pressure in the apparatus, and plasma CVD (PECVD; Plasma Enhanced CVD) and photoexcitation CVD are also included. It is generally used.

도 5는 종래의 박막 증착 및 성장용 저압 CVD 시스템의 개략도이다. 도 5에서 보는 것과 같이 종래의 저압 CVD 시스템은 Gas source를 사용하기에 용이하지만, hexagonal-boron nitride(h-BN) 성장에 많이 이용하는 solid 소스인 Ammonia borane powder를 사용하기에 부적절하다. 5 is a schematic diagram of a conventional low pressure CVD system for thin film deposition and growth. As shown in FIG. 5, the conventional low pressure CVD system is easy to use a gas source, but is inadequate to use Ammonia borane powder, a solid source that is frequently used for hexagonal-boron nitride (h-BN) growth.

이 때문에 solid 소스를 증발시킬 수 있는 precursor 챔버를 장착한 저압 CVD 시스템도 많이 연구가 되었으나, 현재까지 개발된 시스템들은 solid 소스를 로딩 할 수 있는 부분과 저압 CVD 시스템이 일체화 되어 있어서 precursor 챔버만 개별로 다루기 힘들고 개별로 되어있다고 하더라도 정확히 solid 소스의 정확한 온도를 측정하기 어렵고, 보통 hot plate를 사용하여 소스에 가해지는 열의 경로가 불확실하며, precursor 챔버 내의 개별 진공도를 파악하기 어렵다.For this reason, low-pressure CVD systems equipped with precursor chambers that can evaporate solid sources have also been studied a lot, but the systems developed so far have only integrated precursor chambers and low-pressure CVD systems, so only the precursor chambers are individually integrated. Although difficult to handle and individual, it is difficult to accurately measure the exact temperature of the solid source, the heat path to the source is usually uncertain using a hot plate, and it is difficult to determine the individual vacuum in the precursor chamber.

따라서 본 발명은 상기와 같은 문제점을 해결하고자 안출된 것으로, 본발명은 solid 소스를 로딩 할 수 있는 부분과 저압 CVD 시스템이 분리 되어 있어서 precursor 챔버만 개별로 다룰 수 있고, solid 소스의 정확한 온도를 측정할 수 있으며, solid 소스를 증발시킬 수 있는 precursor 챔버 전체에 일정하게 열을 가할 수 있고, 저압 CVD 메인 챔버로 들어가는 라인 내에도 line-heating belt를 장착하여 외부의 온도변화에 큰영향을 받지 않으며, 또한 사용자가 CVD 메인 챔버와는 별개로 precursor 챔버 내의 진공도를 체크할 수 있는 h-BN 성장용 LPCVD 시스템을 제공하고자 하는 것이다.Therefore, the present invention was devised to solve the above problems, and the present invention is capable of handling only the precursor chamber individually because the part capable of loading the solid source and the low pressure CVD system are separated, and measuring the exact temperature of the solid source. It is possible to apply constant heat to the entire precursor chamber that can evaporate a solid source, and a line-heating belt is also installed in the line entering the low-pressure CVD main chamber, so it is not greatly affected by external temperature changes. In addition, it is intended to provide an LPCVD system for h-BN growth that allows a user to check the vacuum level in the precursor chamber separately from the CVD main chamber.

본발명은 h-BN 성장용 LPCVD 시스템에 관한 것으로, h-BN이 성장 공정이 진행 가능하도록 반응 공간을 제공하는 메인 퀄츠 튜브(100), 상기 메인 퀄츠 튜브(100)의 내부 공간에 로딩 되는 금속 촉매가 탑재되는 스테이지, 상기 금속 촉매 표면에 증착될 반응 가스가 메인 퀄츠 튜브(100) 내부 공간으로 공급되도록 메인 퀄츠 튜브의 in-let(120)에 설치되는 1, 2채널(130, 140)의 두 채널의 가스 공급관으로 이루어지되, 상기 가스 공급관의 1-채널(130)은 h-BN이 성장을 위한 캐리어 가스가 공급되는 라인이며, 2-채널(130)은 h-BN의 precursor로 작용하는 Ammonia borane 소스가 공급되는 라인인 것을 특징으로 한다.The present invention relates to an LPCVD system for h-BN growth, the main quartz tube 100 that h-BN provides a reaction space for the growth process to proceed, and the metal loaded into the inner space of the main quartz tube 100 The stage where the catalyst is mounted, the 1, 2 channels 130, 140 installed in the in-let 120 of the main quality tube so that the reaction gas to be deposited on the surface of the metal catalyst is supplied to the interior space of the main quality tube 100 Consisting of two channels of gas supply pipe, 1-channel 130 of the gas supply pipe is a line through which carrier gas for h-BN is grown, and 2-channel 130 acts as a precursor of h-BN. Characterized in that the line is supplied with Ammonia borane sauce.

따라서 본발명은 solid 소스를 로딩 할 수 있는 부분과 저압 CVD 시스템이 분리 되어 있어서 precursor 챔버만 개별로 다룰 수 있고, solid 소스의 정확한 온도를 측정할 수 있으며, solid 소스를 증발시킬 수 있는 precursor 챔버 전체에 일정하게 열을 가할 수 있고, 저압 CVD 메인 챔버로 들어가는 라인 내에도 line-heating belt를 장착하여 외부의 온도변화에 큰영향을 받지 않으며, 또한 사용자가 CVD 메인 챔버와는 별개로 precursor 챔버 내의 진공도를 체크할 수 있는 현저한 효과가 있다.Therefore, the present invention is divided into a part capable of loading a solid source and a low-pressure CVD system, so that only the precursor chamber can be handled individually, the exact temperature of the solid source can be measured, and the entire precursor chamber capable of evaporating the solid source. Constant heat can be applied to the low-pressure CVD main chamber, and a line-heating belt is installed inside the line, so it is not greatly affected by external temperature changes. Also, the vacuum degree in the precursor chamber is separate from the CVD main chamber. There is a remarkable effect that can be checked.

도 1은 본발명의 배치도
도 2는 h-BN 성장용 2-채널 LP-CVD 시스템 설계도
도 3은 본발명의 precursor 챔버의 외부 배치도
도 4는 본발명의 precursor 챔버의 내부 배치도
도 5는 종래의 저압 CVD 시스템 도면1 is a layout of the present invention
2 is a two-channel LP-CVD system design for h-BN growth
3 is an external layout of the precursor chamber of the present invention
4 is an internal layout of the precursor chamber of the present invention
5 is a conventional low pressure CVD system diagram

본발명은 h-BN 성장용 LPCVD 시스템에 관한 것으로, h-BN이 성장 공정이 진행 가능하도록 반응 공간을 제공하는 메인 퀄츠 튜브(100), 상기 메인 퀄츠 튜브(100)의 내부 공간에 로딩 되는 금속 촉매가 탑재되는 스테이지, 상기 금속 촉매 표면에 증착될 반응 가스가 메인 퀄츠 튜브(100) 내부 공간으로 공급되도록 메인 퀄츠 튜브의 in-let(120)에 설치되는 1, 2채널(130, 140)의 두 채널의 가스 공급관으로 이루어지되, 상기 가스 공급관의 1-채널(130)은 h-BN이 성장을 위한 캐리어 가스가 공급되는 라인이며, 2-채널(130)은 h-BN의 precursor로 작용하는 Ammonia borane 소스가 공급되는 라인인 것을 특징으로 한다.The present invention relates to an LPCVD system for h-BN growth, the main quartz tube 100 that h-BN provides a reaction space for the growth process to proceed, and the metal loaded into the inner space of the main quartz tube 100 The stage where the catalyst is mounted, the 1, 2 channels 130, 140 installed in the in-let 120 of the main quality tube so that the reaction gas to be deposited on the surface of the metal catalyst is supplied to the interior space of the main quality tube 100 Consisting of two channels of gas supply pipe, 1-channel 130 of the gas supply pipe is a line through which carrier gas for h-BN is grown, and 2-channel 130 acts as a precursor of h-BN. Characterized in that the line is supplied with Ammonia borane sauce.

또한, 상기 2-채널(130)에 연결된 precursor 챔버(2000)는 h-BN의 precursor인 고체 상태의 Ammonia borane을 증발시키기 위한 공간으로 챔버(1000) 내에 precursor가 로딩 될 수 있는 스테이지가 설치되며, precursor 챔버(2000)의 상단에는 precursor의 온도 측정이 가능하도록 관통 설치되어 스테이지에 도달하게 되는 Thermal couple(1), 챔버(2000) 내 진공 체크를 위한 진공게이지(2), vent valve(3), 및 gas valve(4)가 설치되는 것을 특징으로 한다.In addition, the precursor chamber 2000 connected to the 2-channel 130 is a space for evaporating solid ammonia borane, which is a precursor of h-BN, and a stage capable of loading precursors in the chamber 1000 is installed. At the top of the precursor chamber 2000, a thermal couple (1), a vacuum gauge (2), and a vent valve (3) for checking the vacuum in the chamber (2000) are installed to penetrate the stage so that the temperature of the precursor can be measured. And gas valve (4) is characterized in that it is installed.

또한, 상기 precursor 챔버(2000)에는 precursor에 열을 가할 수 있는 heating belt(500)와 공정 시 CVD 메인 챔버(1000)로 들어가는 라인 내에서 gas 상태 유지를 위한 Line-heating belt(400)가 설치되는 것을 특징으로 한다.In addition, the precursor chamber 2000 is provided with a heating belt 500 capable of applying heat to the precursor and a line-heating belt 400 for maintaining a gas state in a line entering the CVD main chamber 1000 during processing. It is characterized by.

본발명을 첨부도면에 의해 상세히 설명하면 다음과 같다. 도 1은 본발명의 배치도, 도 2는 h-BN 성장용 2-채널 LP-CVD 시스템 설계도, 도 3은 본발명의 precursor 챔버의 외부 배치도, 도 4는 본발명의 precursor 챔버의 내부 배치도, 도 5는 종래의 저압 CVD 시스템 도면이다.The present invention will be described in detail with reference to the accompanying drawings. 1 is a layout diagram of the present invention, FIG. 2 is a schematic diagram of a 2-channel LP-CVD system for h-BN growth, FIG. 3 is an external layout of the precursor chamber of the present invention, and FIG. 4 is an internal layout of the precursor chamber of the invention 5 is a conventional low pressure CVD system diagram.

본발명은 도 3과4에서 보는 것과 같이 solid 소스를 증발시킬 수 있는 precursor 챔버 전체에 일정하게 열을 가할 수 있게 heating belt를 사용하고, 저압 CVD 메인 챔버로 들어가는 라인 내에도 외부의 온도에 영향을 받지 않도록 line-heating belt를 장착한다. 또한 precursor 챔버 상단에 solid 소스의 정확한 온도를 측정하기 위해 thermal couple를 장착하고, 이는 precursor 챔버 내 solid 소스가 로딩되는 스테이지에 정확히 닿게 설계 및 제작하였다. 또한 진공게이지를 장착하여 사용자가 CVD 메인 챔버와는 별개로 precursor 챔버 내의 진공도를 체크할 수 있으며, vent valve, gas valve 등의 valve들을 통해 h-BN 성장을 하지 않을 시에는 다른 박막 성장에 영향을 받지 않도록 할 수 있다.3 and 4, the present invention uses a heating belt to uniformly heat the entire precursor chamber capable of evaporating the solid source, and affects the external temperature even in the line entering the low pressure CVD main chamber. Mount the line-heating belt to avoid receiving it. In addition, a thermal couple was mounted on the top of the precursor chamber to measure the exact temperature of the solid source. In addition, by installing a vacuum gauge, the user can check the degree of vacuum in the precursor chamber separately from the CVD main chamber, and when h-BN growth is not performed through valves such as vent valves and gas valves, other thin film growth is affected. You can avoid receiving it.

곧, 본 발명은 h-BN 성장용 LPCVD 시스템에 관한 것으로, h-BN이 성장 공정이 진행 가능하도록 반응 공간을 제공하는 메인 퀄츠 튜브, 상기 튜브의 내부 공간에 로딩 되는 금속 촉매가 탑재되는 스테이지, 상기 금속 촉매 표면에 증착될 반응 가스가 퀄츠 튜브 내부 공간으로 공급되도록 튜브의 in-let에 설치되는 두 채널의 가스 공급관, 상기 가스 공급관의 1-채널은 h-BN이 성장을 위한 여러 가지의 캐리어 가스가 공급되는 라인, 2-채널은 h-BN의 precursor로 작용하는 Ammonia borane 소스가 공급되는 라인으로 나뉜다. Soon, the present invention relates to an LPCVD system for h-BN growth, a main quartz tube that provides a reaction space for h-BN to proceed with a growth process, a stage on which a metal catalyst loaded into the inner space of the tube is mounted, Gas supply pipe of two channels installed in the in-let of the tube so that the reaction gas to be deposited on the surface of the metal catalyst is supplied to the inner space of the quartz tube, and the 1-channel of the gas supply pipe is h-BN is a variety of carriers for growth The gas supply line, the 2-channel, is divided into the line supplied with the Ammonia borane source acting as a precursor of h-BN.

또한 2-채널에 연결된 챔버는 h-BN의 precursor인 고체 상태의 Ammonia borane을 증발시키기 위한 공간으로 챔버 내에 precursor가 로딩 될 수 있는 스테이지, 챔버의 상단에는 precursor의 온도 측정이 가능하도록 관통 설치되어 스테이지에 도달하게 되는 Thermal couple, 챔버 내 진공 체크를 위한 진공게이지, precursor 챔버만 따로 관리 가능한 vent valve, gas valve, 챔버 외부에는 precursor에 열을 가할 수 있는 heating belt, 공정 시 CVD 메인 챔버로 들어가는 라인 내에서 gas 상태 유지를 위한 Line-heating belt를 포함한다.In addition, the chamber connected to the 2-channel is a space for evaporating solid ammonia borane, which is a precursor of h-BN. A stage in which precursors can be loaded in the chamber, and a stage is installed through the stage to allow the temperature of the precursor to be measured. Thermal couple to reach, vacuum gauge for vacuum check in the chamber, vent valve, gas valve that can manage only the precursor chamber separately, heating belt that can heat the precursor outside the chamber, in the line entering the CVD main chamber during the process Includes a line-heating belt to maintain the gas state.

1000 : 챔버2000 : precursor 챔버
1 : Thermal couple2 : 진공게이지
3 : vent valve4 : gas valve, 게이지
400, 500 : 히팅벨트1000: chamber 2000: precursor chamber
1: Thermal couple2: Vacuum gauge
3: vent valve 4: gas valve, gauge
400, 500: Heating belt

Claims (3)

hexagonal boron nitride(h-BN) 성장 공정이 진행 가능하도록 반응 공간을 제공하는 메인 퀄츠 튜브(100), 상기 메인 퀄츠 튜브(100)의 내부 공간에 로딩 되는 금속 촉매가 탑재되는 스테이지, 상기 금속 촉매 표면에 증착될 반응 가스가 메인 퀄츠 튜브(100) 내부 공간으로 공급되도록 메인 퀄츠 튜브의 in-let(120)에 설치되는 1, 2채널(130, 140)의 두 채널의 가스 공급관으로 이루어지되, 상기 가스 공급관의 1-채널(130)은 h-BN이 성장을 위한 캐리어 가스가 공급되는 라인이며, 2-채널(130)은 h-BN의 precursor로 작용하는 Ammonia borane 소스가 공급되는 라인인 h-BN 성장용 LPCVD 시스템에 있어서,
상기 2-채널(130)에 연결된 precursor 챔버(2000)는 h-BN의 precursor인 고체 상태의 Ammonia borane을 증발시키기 위한 공간으로 챔버(1000) 내에 precursor가 로딩 될 수 있는 스테이지가 설치되며, precursor 챔버(2000)의 상단에는 precursor의 온도 측정이 가능하도록 관통 설치되어 스테이지에 도달하게 되는 Thermal couple(1), 챔버(2000) 내 진공 체크를 위한 진공게이지(2), vent valve(3), 및 gas valve(4)가 설치되는 것이며,
상기 precursor 챔버(2000)에는 precursor에 열을 가할 수 있는 heating belt(500)와 공정 시 CVD 메인 챔버(1000)로 들어가는 라인 내에서 gas 상태 유지를 위한 Line-heating belt(400)가 설치되는 것이며,
상기 precursor 챔버 상단에 solid 소스의 정확한 온도를 측정하기 위해 thermal couple를 장착하되, precursor 챔버 내 solid 소스가 로딩되는 스테이지에 정확히 닿게 설치하는 것을 특징으로 하는 h-BN 성장용 Low Pressure Chemical Vapor Deposition(LPCVD) 시스템Hexagonal boron nitride (h-BN) main quartz tube (100) providing a reaction space to allow the growth process to proceed, a stage in which a metal catalyst is loaded into the interior space of the main quartz tube (100), the metal catalyst surface The reaction gas to be deposited on the main quartz tube 100 is made of two channels of gas supply pipes of 1 and 2 channels 130 and 140 installed in the in-let 120 of the main quartz tube so as to be supplied to the interior space. The 1-channel 130 of the gas supply pipe is a line in which h-BN is a carrier gas for growth, and the 2-channel 130 is a line in which the Ammonia borane source serving as a precursor of h-BN is supplied, h- In the LPCVD system for BN growth,
The precursor chamber 2000 connected to the 2-channel 130 is a space for evaporating solid ammonia borane, which is a precursor of h-BN, and a stage capable of loading a precursor in the chamber 1000 is installed, and the precursor chamber At the top of the (2000), a thermal couple (1), a vacuum gauge (2), a vent valve (3), and gas for vacuum checking in the chamber (2000) are installed through to be installed to enable the temperature measurement of the precursor. valve(4) is installed,
In the precursor chamber 2000, a heating belt 500 capable of applying heat to the precursor and a line-heating belt 400 for maintaining gas state in a line entering the CVD main chamber 1000 during the process are installed.
Low pressure Chemical Vapor Deposition (LPCVD) for h-BN growth, characterized in that a thermal couple is mounted on the top of the precursor chamber to measure the exact temperature of the solid source, but it is installed on the stage where the solid source in the precursor chamber is loaded. ) system 삭제delete 삭제delete
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KR101707563B1 (en) 2009-04-03 2017-02-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. Plasma processing apparatus
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KR101707563B1 (en) 2009-04-03 2017-02-16 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. Plasma processing apparatus
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