CN203721736U - Composite membrane high-efficiency crystalline silicon solar cell - Google Patents
Composite membrane high-efficiency crystalline silicon solar cell Download PDFInfo
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- CN203721736U CN203721736U CN201420052704.9U CN201420052704U CN203721736U CN 203721736 U CN203721736 U CN 203721736U CN 201420052704 U CN201420052704 U CN 201420052704U CN 203721736 U CN203721736 U CN 203721736U
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- material layer
- silicon solar
- solar cell
- refractive index
- crystalline silicon
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Abstract
The utility model relates to the manufacturing technology of crystalline silicon solar cells, and specifically relates to a composite membrane high-efficiency crystalline silicon solar cell. The composite membrane high-efficiency crystalline silicon solar cell comprises a silicon substrate, a SiNx material layer deposited on the silicon substrate, and a SiONy material layer deposited on the SiNx material layer, the refractive index of positions with different thicknesses of the SiNx material layer ranges from 2.0 to 2.3, and the refractive index of positions with different thicknesses of the SiONy material layer ranges from 1.5 to 1.9. According to the composite membrane high-efficiency crystalline silicon solar cell, the efficiency of the crystalline silicon solar cell is improved, and the PID effect can be eliminated.
Description
Technical field
The utility model relates to the manufacturing technology of crystal silicon solar energy battery, specifically a kind of composite membrane high efficiency crystalline silicon solar cell.
Background technology
In crystal silicon solar energy battery production process, PECVD(plasma vapor deposition processes) be a kind of large-scale industry application method that forms antireflective film.The main silicon nitride SiN that uses in actual production
xor silicon dioxide SiO
2as antireflective film.In crystal silicon solar energy battery production process, PECVD(plasma vapor deposition processes) be the method that forms a kind of large-scale industry utilization of antireflective film.General antireflective film mainly comprises: single double-deck SiN
x(silicon nitride) film, SiO
2(silicon dioxide) film, SiO
2/ SiN
xduplicature etc.But along with the Continual Improvement of battery technology technique, the crystal silicon cell transformation efficiency income that the improvement of conventional film layer process brings is more and more less.
Summary of the invention
Technical problem to be solved in the utility model, provides a kind of and can improve crystal silicon solar energy battery efficiency, is conducive to eliminate the composite membrane high efficiency crystalline silicon solar cell of PID effect.
Composite membrane high efficiency crystalline silicon solar cell of the present utility model includes silicon substrate, is deposited on the SiN on silicon substrate
xmaterial layer, be deposited on SiN
xsiON on material layer
ymaterial layer; Described SiN
xthe different-thickness place refractive index of material layer is in 2.0-2.3 range; Described SiON
ythe different-thickness place refractive index of material layer is in 1.5-1.9 range.
Described SiN
xmaterial layer can be had by single or multiple lift the SiN of identical or different refractive index
xmaterial membrane forms, also can be by refractive index the SiN in thickness direction gradual change
xmaterial membrane forms.
Described SiON
ymaterial layer can be had by single or multiple lift the SiON of identical or different refractive index
ymaterial membrane forms, also can be by refractive index the SiON in thickness direction gradual change
ymaterial membrane forms.
Composite membrane high efficiency crystalline silicon solar cell of the present utility model is guaranteeing SiN
xgood passivation effect and light transmission features time, introduce SiON
yfurther reduce the reflectivity of battery surface, improve the absorption of cell piece to sunlight, and then improve short circuit current and the conversion efficiency of cell piece; Simultaneously due to SiON
yfilm for metal ion as the barrier effect that has of the metal ions such as Na, K, at traditional Si N
xon the basis of antireflective coating, deposit SiON
yit is the decay that energy of position causes that rete can be eliminated PID(Potential Induced Degradation) effect, to improve the useful life of solar components.Use battery component of the present utility model, can improve at least 0.45% transformation efficiency; Corresponding assembly color is grey or black, has weakened assembly aberration, has improved the outward appearance of assembly.
Accompanying drawing explanation
Fig. 1 is hierarchy schematic diagram of the present utility model.
Embodiment
As shown in Figure 1, this composite membrane high efficiency crystalline silicon solar cell includes silicon substrate 1, is deposited on the SiN on silicon substrate
xmaterial layer 2, be deposited on SiN
xsiON on material layer
ymaterial layer 3; Described SiN
xthe different-thickness place refractive index of material layer is in 2.0-2.3 range; Described SiON
ythe different-thickness place refractive index of material layer is in 1.5-1.9 range.Described SiN
xmaterial layer can be had by single or multiple lift the SiN of identical or different refractive index
xmaterial membrane forms, also can be by refractive index the SiN in thickness direction gradual change
xmaterial membrane forms.Described SiON
ymaterial layer can be had by single or multiple lift the SiON of identical or different refractive index
ymaterial membrane forms, also can be by refractive index the SiON in thickness direction gradual change
ymaterial membrane forms.
Below in conjunction with embodiment, solar cell of the present utility model and manufacture method are described further:
Embodiment 1:
Step 1, preheating, silicon chip enters reaction cavity and first heats, and prepares to start coating process after reaching the reaction temperature of setting, and Temperature Setting is 450 ℃;
Step 2, constant voltage, is filled with reacting gas (NH to reaction cavity
3, SiH
4), SiH
4flow 780sccm/min, NH
3flow 3500 sccm/min, pressure is 1.5 torr;
Step 3, SiN
xthe deposition of material layer.Take two-layer is example explanation: radio-frequency power supply is opened, and radio-frequency power is 7000 W, and the reaction time is 180sec, and forming refractive index is 2.25, and thickness is the SiN of 30nm left and right
xrete; Then radio-frequency power supply is closed 10sec, NH
3flow-rate adjustment to 6800 sccm/min, pressure remains unchanged, and opens radio-frequency power supply, and the reaction time is 250sec, and forming refractive index is 2.07, the SiN that thickness is 40nm
xrete;
Step 4, vacuumizes, by reacting residual gas in reaction cavity, extracts out, and be follow-up SiON
ydeposition do standby;
Step 5, constant voltage, passes into deposition SiON
ydeposit required gas (NH
3, N
2o, SiH
4), SiH
4flow 200 sccm/min, N
2o flow 6500sccm/min, NH
3flow 0sccm/min, pressure is 1.1torr;
Step 6, SiON
ymaterial layer depositions, radio-frequency power supply is opened, and radio-frequency power is 9000W, and the reaction time is 650sec, forms refractive index and be 1.6, thickness is the SiON of 70nm left and right
yfilm layer.
Embodiment bis-:
Step 1, preheating, silicon chip enters reaction cavity and first heats, and prepares to start coating process after reaching the reaction temperature of setting, and temperature is generally set as 450 ℃;
Step 2, constant voltage, is filled with reacting gas (NH to reaction cavity
3, SiH
4), SiH
4flow 780sccm/min, NH
3flow 3150 sccm/min, pressure is 1.7 torr;
Step 3, SiN
xthe deposition of material layer.Radio-frequency power supply is opened, and radio-frequency power is 7000 W, and the reaction time is 450sec, at SiN
xin deposition process, call function, makes NH
3flow is increased to 7800sccm/min, SiH from 3150sccm/min in reaction time 500sec internal linear
4flow and pressure remain unchanged, thereby form thickness, are 70nm left and right, and refractive index is reduced to 2.05 SiN gradually from 2.3
xgradual change rete;
Step 4, vacuumizes, and extracts out, for the deposition of follow-up SiON is done standby by reacting residual gas in reaction cavity;
Step 5, constant voltage, passes into deposition SiON
ydeposit required gas (NH
3, N
2o, SiH
4), SiH
4flow 200 sccm/min, N
2o flow 6500sccm/min, NH
3flow 350sccm/min, pressure is 1.1torr;
Step 6, SiON
ymaterial layer depositions, radio-frequency power supply is opened, radio-frequency power is 9000W, reaction time is 1300sec, same call function, makes NH3 flow be reduced to 0sccm/min from 350sccm/min linearity, and other parameters remain unchanged, can form like this thickness is 110nm, and refractive index is reduced to 1.6 SiON gradually from 1.9
ygradual change rete.
The battery of above-described embodiment, electrical performance data testing result is as follows:
Claims (3)
1. a composite membrane high efficiency crystalline silicon solar cell, is characterized in that: it includes silicon substrate, is deposited on the SiN on silicon substrate
xmaterial layer, be deposited on SiN
xsiON on material layer
ymaterial layer; Described SiN
xthe different-thickness place refractive index of material layer is in 2.0-2.3 range; Described SiON
ythe different-thickness place refractive index of material layer is in 1.5-1.9 range.
2. composite membrane high efficiency crystalline silicon solar cell according to claim 1, is characterized in that: described SiN
xmaterial layer is had the SiN of identical or different refractive index by single or multiple lift
xmaterial membrane forms, or by refractive index the SiN in thickness direction gradual change
xmaterial membrane forms.
3. composite membrane high efficiency crystalline silicon solar cell according to claim 1, is characterized in that: described SiON
ymaterial layer is had the SiON of identical or different refractive index by single or multiple lift
ymaterial membrane forms, or by refractive index the SiON in thickness direction gradual change
ymaterial membrane forms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420052704.9U CN203721736U (en) | 2014-01-27 | 2014-01-27 | Composite membrane high-efficiency crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420052704.9U CN203721736U (en) | 2014-01-27 | 2014-01-27 | Composite membrane high-efficiency crystalline silicon solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203721736U true CN203721736U (en) | 2014-07-16 |
Family
ID=51160869
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|---|---|---|---|
| CN201420052704.9U Expired - Fee Related CN203721736U (en) | 2014-01-27 | 2014-01-27 | Composite membrane high-efficiency crystalline silicon solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794658A (en) * | 2014-01-27 | 2014-05-14 | 镇江大全太阳能有限公司 | Composite membrane efficient crystalline silicon solar cell and manufacturing method of composite membrane efficient crystalline silicon solar cell |
-
2014
- 2014-01-27 CN CN201420052704.9U patent/CN203721736U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794658A (en) * | 2014-01-27 | 2014-05-14 | 镇江大全太阳能有限公司 | Composite membrane efficient crystalline silicon solar cell and manufacturing method of composite membrane efficient crystalline silicon solar cell |
| CN103794658B (en) * | 2014-01-27 | 2016-09-14 | 镇江大全太阳能有限公司 | Composite membrane high efficiency crystalline silicon solar cell and manufacture method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140716 Termination date: 20200127 |