CN110034211B - Method for reducing consumption of chain type texturing chemicals - Google Patents
Method for reducing consumption of chain type texturing chemicals Download PDFInfo
- Publication number
- CN110034211B CN110034211B CN201910330032.0A CN201910330032A CN110034211B CN 110034211 B CN110034211 B CN 110034211B CN 201910330032 A CN201910330032 A CN 201910330032A CN 110034211 B CN110034211 B CN 110034211B
- Authority
- CN
- China
- Prior art keywords
- diamond wire
- silicon wafer
- polishing
- polycrystalline silicon
- texturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 89
- 239000000126 substance Substances 0.000 title claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 99
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 92
- 239000010432 diamond Substances 0.000 claims abstract description 92
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 84
- 238000002310 reflectometry Methods 0.000 claims abstract description 32
- 238000005498 polishing Methods 0.000 claims description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 64
- 229910052710 silicon Inorganic materials 0.000 claims description 63
- 239000010703 silicon Substances 0.000 claims description 63
- 239000002245 particle Substances 0.000 claims description 55
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 32
- 239000000243 solution Substances 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 30
- 238000005507 spraying Methods 0.000 claims description 28
- 239000008367 deionised water Substances 0.000 claims description 24
- 229910021641 deionized water Inorganic materials 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 20
- 230000007797 corrosion Effects 0.000 claims description 20
- 238000005260 corrosion Methods 0.000 claims description 20
- 239000003513 alkali Substances 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims description 15
- 230000035484 reaction time Effects 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 230000004048 modification Effects 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 229910052580 B4C Inorganic materials 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- BYTCDABWEGFPLT-UHFFFAOYSA-L potassium;sodium;dihydroxide Chemical compound [OH-].[OH-].[Na+].[K+] BYTCDABWEGFPLT-UHFFFAOYSA-L 0.000 claims description 3
- 238000009210 therapy by ultrasound Methods 0.000 claims description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- 230000000052 comparative effect Effects 0.000 description 11
- 230000007547 defect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 229910021418 black silicon Inorganic materials 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for reducing consumption of chain type texturing chemicals, which comprises the following steps: in the chain type texturing process of the diamond wire polycrystalline silicon wafer, the surface of one side of the diamond wire polycrystalline silicon wafer is controlled to be away from the liquid level of the corrosive liquid by 30-120 mu m and not to be contacted, and the surface of the other side of the diamond wire polycrystalline silicon wafer is controlled to be contacted with the corrosive liquid. The method can greatly reduce the consumption of chemicals, reduce the cost and solve the problem of poor battery performance caused by high reflectivity of the two-sided suede in the prior art.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for reducing consumption of chain type texturing chemicals.
Background
The polycrystalline silicon wafer mainly comprises two processes of mortar wire cutting and diamond wire cutting, the mortar cost is higher than that of diamond wires and is gradually eliminated, and the diamond wire polycrystalline silicon wafer (namely the polycrystalline silicon wafer obtained by diamond wire cutting) is mainly used and has the advantages of few defects and low cost. Diamond wire polycrystalline silicon slice passes through chain type texturing machine, the upper and lower two sides of the silicon slice form the texture structure, the reflectivity of the two sides is tested by D8, basically the same, we can think that the chemicals consumed by the two sides of the silicon slice are the same, the consumption of the chemicals on the two sides is the same, which improves the production yield to a certain extent. Moreover, the reflectivity of the diamond wire polycrystalline silicon wafer is high through chain texturing, and efficient batteries are difficult to prepare.
Taking a P-type original silicon wafer as an example, a solar cell with a PN junction is prepared through a series of processes. The solar cell is known to have a textured structure with low reflectivity on the surface N contacting sunlight and a polished surface on the surface P, i.e. the reflectivity is very high. Therefore, the diamond wire polysilicon wafer passes through the chain type texturing machine, both sides of the diamond wire polysilicon wafer are provided with the textured structures, and the reflectivity is high.
Aiming at the problems, the wet black silicon technology is applied, and a working procedure is added after acid texturing, so that the problem of overhigh reflectivity caused by cutting a polycrystalline silicon wafer by a diamond wire is solved. For example, CN106024988A discloses a one-step wet black silicon preparation and surface treatment method, which comprises: immersing the silicon wafer with the surface damage layer removed into corrosive liquid for reaction to prepare black silicon; immersing black silicon into surface treatment corrosive liquid for surface optimization treatment to obtain a uniform textured silicon wafer with a submicron structure; the corrosion solution is a mixed aqueous solution of concentrated hydrofluoric acid containing metal ions, an oxidant and a high molecular polymer, and the surface treatment corrosion solution is a mixed aqueous solution of acid containing an additive. Through the treatment, the surface of the black silicon suede is uniform and has no sharp boundary, and the light absorption efficiency of the battery is improved.
However, the dry black silicon technology requires new equipment and procedures, and is complex to operate and higher in cost; the wet black silicon (MCCE) technology uses a chemical reagent, and has problems of heavy metal content, high cost and the like.
Therefore, it is urgently needed to develop a suitable method, which reduces the consumption of chemicals and the cost, and forms a textured structure with low reflectivity and a polished surface with high reflectivity on both sides of a silicon wafer, so as to improve the performance of a solar cell while reducing the cost.
Disclosure of Invention
The invention aims to provide a method for reducing consumption of chain type texturing chemicals. The method can greatly reduce the consumption of chemicals, reduce the cost and solve the problem of poor battery performance caused by high reflectivity of the two-sided suede in the prior art.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of reducing chain-type wool making chemical consumption, the method comprising: in the chain type texturing process of the diamond wire polycrystalline silicon wafer, the surface of one side of the diamond wire polycrystalline silicon wafer is controlled to be away from the liquid level of the corrosive liquid by n and not to be contacted, n is larger than 30um, the surface of the other side of the diamond wire polycrystalline silicon wafer is contacted with the corrosive liquid, and the distance between the surface of the other side of the diamond wire polycrystalline silicon wafer and the liquid level of the corrosive liquid is m, and m is larger than 40 um.
One side surface of diamond wire polycrystalline silicon piece is greater than 30um with the etchant liquid level apart from n, for example 35um, 40um, 50um, 60um, 70um, 80um, 90um, 100um, 110um, 120um or 140um etc. preferred n is 30 ~ 120 um. The other side surface contact etchant of diamond wire polycrystalline silicon piece just is greater than 40um apart from etchant liquid level m, for example 45um, 50um, 60um, 70um, 80um, 90um, 100um, 110um, 120um, 130um, 140um, 145um or 160um etc. preferred m is 40 ~ 150.
In the method, a roller of a chain type texturing machine conveys a diamond wire polycrystalline silicon wafer to move, the lower surface of the diamond wire polycrystalline silicon wafer is below the liquid level of the corrosive liquid, and the upper surface of the diamond wire polycrystalline silicon wafer is above the liquid level of the corrosive liquid.
Preferably, the thickness of the diamond wire polycrystalline silicon wafer is 120-200 um, such as 120um, 135um, 150um, 160um, 170um, 180um, 190um or 200um, etc., preferably 160-180 um.
In the reaction process of the silicon wafer in the corrosive liquid, gas can be generated to cause the silicon wafer to float up and down, so that the upper and lower floating of the corrosive liquid surface is unstable. The influence of the thickness of the silicon wafer and the instability of the liquid level in the reaction process is received, if the distance n is not guaranteed to be larger than 30um and the distance m is not guaranteed to be larger than 40um at the same time, the liquid level is unstable, so that the surface of the silicon wafer on the polishing side is very easy to contact with corrosive liquid, a local suede is formed at the position where the surface of the silicon wafer on the side is contacted with the corrosive liquid, the polishing effect is not ideal, and the battery efficiency is further influenced. Or the surface of the silicon wafer on the texturing side can not contact with the corrosive liquid frequently, and then uneven texturing is formed to influence the corrosion texturing effect, so that the overall reflectivity of the obtained silicon surface is higher, and the battery efficiency is further influenced.
For the preparation of solar cells, there are one side that receives sunlight and one side that faces away from the sunlight. According to the invention, through the limitation of texturing technological parameters, one surface of the obtained silicon wafer is a polished side, and the other surface of the silicon wafer is a texturing side. The surface of the silicon on the surface receiving the sunlight has a suede with lower reflectivity, so that the sunlight can be better absorbed, and the efficiency of the cell is improved; the surface of the silicon on the surface back to the sunlight is provided with a polished surface, so that the surface recombination is reduced, the probability of secondary absorption of light entering the silicon wafer and reflected back through the polished surface is increased, and the efficiency of the cell is increased.
As the preferable technical scheme of the method, under the negative pressure air draft environment, the distance between one side surface of the diamond wire polycrystalline silicon sheet and the liquid level of the corrosive liquid is 30-120 mu m and the side surface of the diamond wire polycrystalline silicon sheet is not contacted.
Preferably, a chain type texturing machine is adopted, corrosive liquid is placed in a texturing groove (also called a texturing Tank groove), and the distance between the liquid level of the corrosive liquid in the texturing groove and one side surface of the diamond wire polycrystalline silicon sheet is 30-120 mu m and is not contacted. The present invention may ensure the above-mentioned distance by adjusting the position of the rollers and overflow plates in the chain-type texturing machine, which operation is well known to those skilled in the art and will not be described herein.
Preferably, the etching solution is a mixed solution of hydrofluoric acid, nitric acid and water.
Preferably, the etching solution is prepared from hydrofluoric acid, nitric acid and deionized water according to a volume ratio of (1-2) - (3-8) - (2-6), for example, 1:3:6, 1:5:6, 1:8:6, 2:3:2, 2:5:6 or 2:8: 3. The mass fraction of the hydrofluoric acid is 48-50%, preferably 49%, and the mass fraction of the nitric acid is 68-70%, preferably 69%.
Preferably, when the etching solution is used for texturing two side surfaces of the diamond wire polycrystalline silicon wafer, the two side surfaces independently satisfy the following conditions: the temperature is 5-30 ℃, and the reaction time is 60-300 s. The temperature during the texturing is, for example, 5 ℃, 10 ℃, 12 ℃, 15 ℃, 18 ℃, 20 ℃, 25 ℃ or 30 ℃ and the like; the reaction time is, for example, 60s, 70s, 80s, 90s, 100s, 110s, 125s, 150s, 175s, 200s, 240s, 260s, 280s, 300s, or the like.
As a preferred technical scheme of the method, before chain type texturing, single-side polishing treatment is carried out on the diamond wire polycrystalline silicon wafer, and the purpose of the polishing treatment is to remove organic matters and damaged layers on the surface of the silicon.
Preferably, the polishing treatment is performed using a polishing liquid.
Preferably, the polishing solution is an alkali polishing solution or an acid polishing solution, preferably an alkali polishing solution.
Preferably, the chemical composition of the alkali polishing solution is: the mixed liquid comprises 8-25% of potassium sodium hydroxide and 25% of deionized water, wherein the mass fraction of the potassium sodium hydroxide in the mixed liquid is 8%, 10%, 12%, 15%, 17%, 20%, 21.5%, 23% or 25%.
Preferably, the acid polishing solution is a mixed solution prepared from hydrofluoric acid, nitric acid and deionized water according to a volume ratio of 1 (4-6) to (1-3), for example, 1:4:1, 1:6:1, 1:4:2, 1:4:3, 1:5:3 or 1:5: 2. The mass fraction of the hydrofluoric acid is 48-50%, preferably 49%, and the mass fraction of the nitric acid is 68-70%, preferably 69%.
Preferably, alkali polishing is carried out by using an alkali polishing solution, wherein the reaction temperature of the alkali polishing is 40-100 ℃, and the reaction time is 50-300 s. The temperature during the polishing is, for example, 40 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃ or 100 ℃ or the like; the time is, for example, 50s, 65s, 80s, 90s, 100s, 120s, 135s, 150s, 160s, 180s, 200s, or the like.
Preferably, a chain type texturing machine is adopted, the polishing solution is placed in a polishing tank, and single-side polishing treatment is carried out.
As a preferred technical scheme of the method, the method comprises the step of cleaning the surfaces of two sides of the diamond wire polycrystalline silicon wafer after polishing a single surface before chain type texturing.
Preferably, the rinsing is performed with deionized water.
Preferably, the cleaning comprises both side surfaces of the diamond wire polycrystalline silicon wafer.
As a preferred technical scheme of the method, before chain type texturing, diamond wire polycrystalline silicon chips are subjected to high-hardness particle modification, wherein the high hardness is as follows: the Mohs hardness is more than or equal to 9 so as to increase the roughness, damage and defect area of the corresponding surface. Specifically, the original surface morphology of the silicon surface can be damaged by modifying high-hardness particles, the roughness of the surface of the diamond wire silicon wafer is increased, and more surface defects can be uniformly introduced into the silicon surface.
Because the silicon wafer is cut by adopting diamond wires, the silicon surface of the silicon wafer has a brittle defect area and a plastic smooth area, the brittle defect area has more damage and defects, the texturing is easy, and the texture is deep and has low reflectivity after the texturing is carried out; and the plastic smooth area has less damage and defects, is not easy to be subjected to texturing, has a shallow structure and high reflectivity after texturing, and has poor integral texturing effect. The original morphology of the silicon surface is recombined through high-hardness particle modification, a damage defect area with uniformity is formed, and the obtained silicon wafer can obtain a good texturing effect through treatment of a corrosive liquid and has a textured structure with low reflectivity.
Preferably, the method for modifying the high-hardness particles is as follows: spraying high-hardness particles by using a nozzle, or placing the diamond wire polycrystalline silicon wafer in a solution containing the high-hardness particles for ultrasonic treatment. The high-hardness particles are adopted for modification, the roughness of the surface of the silicon is increased, defects are introduced, the lower reflectivity can be obtained by adopting conventional acid texturing corrosion, and the obtained texturing effect is equivalent to that of the black silicon technology.
More preferably, the modification is performed by spraying the high hardness particles using a nozzle, and the spraying is uniform spraying. The optimized technical scheme is equivalent to impacting the silicon surface, the original appearance of the silicon surface is recombined, and a uniform damage defect area is formed, so that the silicon wafer can have a good texturing effect through corrosive liquid and has a low-reflectivity textured structure.
Preferably, the inner diameter of the nozzle used for spraying is 5-8 mm, such as 5mm, 6mm, 7mm, 7.5mm or 8 mm; the injection pressure is 0.3 to 0.5MPa, such as 0.3 MPa, 0.35MPa, 0.4MPa or 0.5 MPa; the spraying time is 2-5 s, such as 2s, 4s or 5 s.
Preferably, the high-hardness particles include any one or a combination of at least two of silicon carbide particles, boron nitride particles, boron carbide particles, or tungsten carbide particles, but are not limited to the above-listed high-hardness particles, and other high-hardness and water-insoluble particles may be used in the present invention, preferably silicon carbide particles.
Preferably, the high-hardness particles have a particle size of 5um to 10um, such as 5um, 6um, 8um, 9um, or 10um, and the like.
As a preferred technical scheme of the method, before chain type texturing, single-side polishing treatment is carried out on the diamond wire polycrystalline silicon wafer, and then high-hardness particle modification is carried out on the surface.
Or before chain type texturing, carrying out single-side polishing treatment, cleaning the surfaces of two sides and carrying out high-hardness particle modification on the surface of the polished side in sequence.
Preferably, after the modification of the high-hardness particles, the modified surface is cleaned to remove silicon particles and high-hardness particles (e.g., silicon carbide particles) remaining on the silicon surface.
Preferably, the rinsing is performed with deionized water.
As a further preferred technical solution of the method of the present invention, the method comprises the steps of:
(1) the method comprises the following steps of putting alkali polishing liquid into a polishing groove by adopting a chain type texturing machine, polishing the lower surface of a diamond wire polycrystalline silicon wafer, wherein the upper surface is not polished, the reaction temperature of the alkali polishing liquid is 40-100 ℃, the reaction time is 50-300 s, and the single-side polishing of the lower surface is realized through the steps, while the upper surface is not polished and still is the original untreated surface;
the thickness of the diamond wire polycrystalline silicon wafer is 160-180 um;
(2) cleaning the surfaces of two sides of the diamond wire polycrystalline silicon wafer by adopting water;
(3) turning the diamond wire polycrystalline silicon wafer by 180 degrees by using a wafer turning machine, wherein the lower surface of the silicon wafer is an original untreated surface (namely an original upper surface), and the upper surface of the silicon wafer is a surface subjected to the polishing treatment (namely an original lower surface);
(4) uniformly spraying silicon carbide particles on the lower surface in the step (3) by using a nozzle, and then spraying and washing by using deionized water;
(5) performing acid corrosion on the lower surface treated in the step (4) to achieve texturing, placing corrosive liquid in a texturing groove, adjusting the positions of a roller and an overflow baffle to ensure that the liquid level of the corrosive liquid in the texturing groove is 30-120 microns away from the surface of the diamond wire polycrystalline silicon wafer, performing the etching under a negative pressure air draft environment, always ensuring that the liquid level of the corrosive liquid is not in contact with the surface of the diamond wire polycrystalline silicon wafer, and ensuring that the lower surface is in contact with the corrosive liquid, wherein under the condition, the upper surface does not participate in any reaction, only the lower surface participates in the reaction, the upper surface of the obtained silicon wafer is a polished surface with high reflectivity, and the lower surface is a textured structure with low reflectivity, so that the purpose of reducing consumption of chain-type texturing chemicals is achieved;
the corrosive liquid is a mixed solution of hydrofluoric acid, nitric acid and water;
the following conditions are satisfied for corrosion of the lower surface: the temperature of acid corrosion is 5-30 ℃, and the reaction time is 60-300 s;
(6) and cleaning the obtained diamond wire polycrystalline silicon wafer by using deionized water, and drying.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the invention, in the texturing process of the silicon wafer by the chain type texturing machine, the distance between the surface of one side of the diamond wire polycrystalline silicon wafer and the liquid level of the corrosive liquid is controlled to be n and not contacted, n is larger than 30um, the surface of the other side of the diamond wire polycrystalline silicon wafer is controlled to be contacted with the corrosive liquid, m is larger than 40um and is away from the liquid level of the corrosive liquid, so that the consumption of chemicals can be effectively reduced, the cost is reduced, and the problem of poor battery performance caused by high reflectivity of two textured surfaces in the prior art can be solved.
(2) The single-side polishing treatment is added before the chain type texturing, so that the surface damage layer on one side of the silicon wafer is removed, and the subsequent single-side corrosion texturing on the surface on the other side of the silicon wafer is facilitated. If the single-side polishing treatment is not carried out, the single-side etching texturing is directly carried out on the surface of the other side, and a silicon solar cell is prepared through a series of subsequent processes, so that the efficiency is very low because the silicon wafer does not remove a surface damage layer on one side of a texturing end and serious surface recombination is caused; if a double-side polishing process is performed before texturing, more polishing solution is consumed to achieve the same polishing effect as a single-side polishing process, which increases chemical costs.
(3) Silicon carbide particles are sprayed on the silicon wafer, and damage and defect regions which are easy to react are uniformly introduced, so that good texturing effect is ensured to be obtained subsequently.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments.
Example 1
The present embodiment provides a method of reducing chain-type wool making chemical consumption, the method comprising the steps of:
(1) the method comprises the following steps of putting alkali polishing liquid into a polishing groove by adopting a chain type texturing machine, polishing the lower surface of a diamond wire polycrystalline silicon wafer (with the thickness of 160 mu m), wherein the upper surface is not polished, the reaction temperature of the alkali polishing liquid is 50 ℃, and the reaction time is 260s, so that the single-side polishing of the lower surface is realized through the step, and the upper surface is not polished and is still the original untreated surface;
(2) cleaning the surfaces of two sides of the diamond wire polycrystalline silicon wafer by using deionized water;
(3) turning the diamond wire polycrystalline silicon wafer by 180 degrees by using a wafer turning machine, wherein the lower surface of the silicon wafer is an original untreated surface, and the upper surface of the silicon wafer is a polished surface;
(4) uniformly spraying silicon carbide particles on the lower surface in the step (3) by using a nozzle, wherein the particle size of the sprayed silicon carbide particles is 6um, the inner diameter of the nozzle is 7mm, the spraying pressure is 0.35MPa, and the spraying time is 2s, and then spraying and washing by using deionized water;
(5) performing acid corrosion on the lower surface treated in the step (4) to achieve texturing, placing a corrosive liquid in a texturing groove, ensuring that the liquid level of the corrosive liquid in the texturing groove is 30um away from the upper surface of the diamond wire polycrystalline silicon wafer and is not in contact with the upper surface, performing the etching under a negative pressure air draft environment, always ensuring that the liquid level of the corrosive liquid is not in contact with the surface of the diamond wire polycrystalline silicon wafer, ensuring that the lower surface is in contact with the corrosive liquid and is 130um away from the liquid level of the corrosive liquid, wherein under the condition, the upper surface does not participate in any reaction, only the lower surface participates in the reaction, the upper surface of the obtained silicon wafer is a polished surface with high reflectivity, and the lower surface is a textured structure with low reflectivity, so that the purpose of reducing the consumption of chain-type texturing chemicals;
the following conditions are satisfied for corrosion of the lower surface: the temperature of acid corrosion is 10 ℃, and the reaction time is 200 s;
(6) and cleaning the obtained diamond wire polycrystalline silicon wafer by using deionized water, and drying.
Example 2
The present embodiment provides a method of reducing chain-type wool making chemical consumption, the method comprising the steps of:
(1) the method comprises the following steps of putting alkali polishing liquid into a polishing groove by adopting a chain type texturing machine, polishing the lower surface of a diamond wire polycrystalline silicon wafer (with the thickness of 180 mu m), wherein the upper surface is not polished, the reaction temperature of the alkali polishing liquid is 100 ℃, and the reaction time is 50s, so that the single-side polishing of the lower surface is realized through the step, and the upper surface is not polished and is still the original untreated surface;
(2) cleaning the surfaces of two sides of the diamond wire polycrystalline silicon wafer by using deionized water;
(3) turning the diamond wire polycrystalline silicon wafer by 180 degrees by using a wafer turning machine, wherein the lower surface of the silicon wafer is an original untreated surface, and the upper surface of the silicon wafer is a polished surface;
(4) uniformly spraying boron nitride particles on the lower surface in the step (3) by using a nozzle, wherein the particle size of the sprayed silicon carbide particles is 8um, the inner diameter of the nozzle is 7mm, the spraying pressure is 0.35MPa, and the spraying time is 2s, and then spraying and washing by using deionized water;
(5) performing acid corrosion on the lower surface treated in the step (4) to achieve texturing, placing a corrosive liquid in a texturing groove, ensuring that the liquid level of the corrosive liquid in the texturing groove is 70um away from the upper surface of the diamond wire polycrystalline silicon wafer and is not in contact with the upper surface of the diamond wire polycrystalline silicon wafer, performing the etching under a negative pressure air draft environment, always ensuring that the liquid level of the corrosive liquid is not in contact with the surface of the diamond wire polycrystalline silicon wafer, ensuring that the lower surface is in contact with the corrosive liquid and is 110um away from the liquid level of the corrosive liquid, wherein under the condition, the upper surface does not participate in any reaction, only the lower surface participates in the reaction, the upper surface of the obtained silicon wafer is a polished surface with high reflectivity, and the lower surface is a textured structure with low reflectivity, so that the purpose of reducing the consumption;
the following conditions are satisfied for corrosion of the lower surface: the temperature of acid corrosion is 20 ℃, and the reaction time is 100 s;
(6) and cleaning the obtained diamond wire polycrystalline silicon wafer by using deionized water, and drying.
Example 3
The present embodiment provides a method of reducing chain-type wool making chemical consumption, the method comprising the steps of:
(1) the method comprises the following steps of putting alkali polishing liquid into a polishing groove by adopting a chain type texturing machine, polishing the lower surface of a diamond wire polycrystalline silicon wafer (with the thickness of 170um), wherein the upper surface is not polished, the reaction temperature of the alkali polishing liquid is 70 ℃, the reaction time is 150s, and the single-side polishing of the lower surface is realized by the step, while the upper surface is not polished and still is the original untreated surface;
(2) cleaning the surfaces of two sides of the diamond wire polycrystalline silicon wafer by using deionized water;
(3) turning the diamond wire polycrystalline silicon wafer by 180 degrees by using a wafer turning machine, wherein the lower surface of the silicon wafer is an original untreated surface, and the upper surface of the silicon wafer is a polished surface;
(4) uniformly spraying silicon carbide particles on the lower surface in the step (3) by using a nozzle, wherein the particle size of the sprayed silicon carbide particles is 7um, the inner diameter of the nozzle is 7mm, the spraying pressure is 0.35MPa, and the spraying time is 2s, and then spraying and washing by using deionized water;
(5) performing acid corrosion on the lower surface treated in the step (4) to achieve texturing, placing a corrosive liquid in a texturing groove, ensuring that the liquid level of the corrosive liquid in the texturing groove is 100um away from the upper surface of the diamond wire polycrystalline silicon wafer and is not in contact with the upper surface of the diamond wire polycrystalline silicon wafer, performing the process under a negative pressure air draft environment, always ensuring that the liquid level of the corrosive liquid is not in contact with the surface of the diamond wire polycrystalline silicon wafer, ensuring that the lower surface is in contact with the corrosive liquid and is 70um away from the liquid level of the corrosive liquid, wherein under the condition, the upper surface does not participate in any reaction, only the lower surface participates in the reaction, the upper surface of the obtained silicon wafer is a polished surface with high reflectivity, and the lower surface is a textured structure with low reflectivity, so that the purpose of reducing the;
the following conditions are satisfied for corrosion of the lower surface: the temperature of acid corrosion is 15 ℃, and the reaction time is 240 s;
(6) and cleaning the obtained diamond wire polycrystalline silicon wafer by using deionized water, and drying.
Example 4
The method and conditions were the same as in example 3 except that silicon carbide was replaced with boron carbide.
Example 5
The method and conditions were the same as those in example 3 except that the distance n in step (5) was adjusted from 100um to 90 um.
Comparative example 1
The method and conditions were the same as those in example 3 except that the steps (1) to (3) were not performed, but the step of spraying silicon carbide particles was directly performed on the lower surface.
Comparative example 2
The preparation method and conditions were the same as in example 3 except that no silicon carbide particles were sprayed.
Comparative example 3
The method and conditions were the same as in example 1 except that the distance n in step (5) was adjusted from 30um to 5 um.
Comparative example 4
The method and conditions were the same as in example 1 except that the distance in step (5) was adjusted from 30um to 150 um.
Comparative example 5
The same procedure as in comparative example 1 was followed, except that in step (5), both the lower surface and the upper surface were subjected to acid texturing.
And (3) detection: testing the reflectivity of the textured surface of the diamond wire polycrystalline silicon wafer by using D8, preparing the textured diamond wire polycrystalline silicon wafer into a diamond wire polycrystalline silicon solar cell through the working procedures of diffusion, etching, film coating, metallization and the like, and testing the efficiency.
TABLE 1
As can be seen from examples 1 to 5 and comparative examples 1 to 5, in example 3, compared with comparative example 1, the diamond wire polycrystalline silicon wafer is not only subjected to single-side etching texturing, but also subjected to polishing treatment on the other side, so that a damaged layer and organic matters on the silicon surface are effectively removed, surface recombination is not caused, the open-circuit voltage and short-circuit current are high, and the efficiency is high by 0.8%; compared with the comparative example 2, in the embodiment 3, silicon nitride particles are sprayed on the diamond wire polycrystalline silicon wafer to roughen the surface of the diamond wire polycrystalline silicon wafer, and then the surface is directly corroded by acid, so that the reflectivity of the textured surface is effectively reduced, the short-circuit current is higher, and the efficiency is 0.56 percent higher; compared with the embodiment 1, the comparative example 3 has the advantages that the distance between the corrosive liquid and the upper surface of the silicon is reduced to 5um, the corrosive liquid level fluctuates up and down in the reaction process, the corrosive liquid can corrode the upper surface to form a textured structure, the reflectivity of the upper surface is reduced, the polishing effect of the upper surface is influenced, the battery piece manufactured in the way is not beneficial to the passivation effect of the back surface, the efficiency is reduced to a certain degree, and the efficiency is lower by 0.07%; compared with the embodiment 1, the comparison example 4 increases the heights of the corrosive liquid and the upper surface of the silicon, so that the lower surface of the silicon is not likely to contact the corrosive liquid to influence the texturing effect, the reflectivity of a texturing surface is increased, and the efficiency is also lower by 0.35%; in comparative example 5, both sides of silicon were acid etched to make the texture, so that the amount of chemicals consumed was twice as much as that of example 1.
The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (33)
1. A method of reducing chain-type texture-making chemical consumption, the method comprising:
before chain system fine hair, carry out single face polishing to diamond wire polycrystal silicon chip, at diamond wire polycrystal silicon chip's chain system fine hair in-process, control one side surface of diamond wire polycrystal silicon chip and etchant liquid level are apart from n and contactless, and n is greater than 30um less than or equal to 120um, and diamond wire polycrystal silicon chip's opposite side surface contact etchant, and apart from etchant liquid level m, m is greater than 40um less than or equal to 150um, and diamond wire polycrystal silicon chip's thickness is 120 ~ 200 um.
2. The method of claim 1, wherein the diamond wire polysilicon sheet has a thickness of 160 to 180 μm.
3. The method as claimed in claim 1, wherein under the negative pressure air draft environment, the distance between one side surface of the diamond wire polycrystalline silicon piece and the liquid level of the corrosive liquid is 30-120 um and the side surface of the diamond wire polycrystalline silicon piece is not contacted.
4. The method as claimed in claim 1, wherein a chain type texturing machine is adopted, the corrosive liquid is placed in the texturing tank, and the liquid level in the texturing tank is ensured to be 30-120 um away from one side surface of the diamond wire polycrystalline silicon slice and not to be contacted.
5. The method according to claim 1, wherein the etching solution is a mixed solution of hydrofluoric acid, nitric acid and water.
6. The method as claimed in claim 1, wherein the etching solution is prepared from hydrofluoric acid, nitric acid and deionized water in a volume ratio of (1-2): (3-8): 2-6), the mass fraction of the hydrofluoric acid is 48-50%, and the mass fraction of the nitric acid is 68-70%.
7. The method of claim 6, wherein the hydrofluoric acid is present at 49% by weight.
8. The method of claim 6, wherein the nitric acid is present in an amount of 69% by weight.
9. The method according to claim 7, wherein the etching solution is prepared from hydrofluoric acid, nitric acid and deionized water in a volume ratio of 1.5:4: 3.
10. The method according to claim 1, wherein when the etching solution is used for texturing both side surfaces of the diamond wire polycrystalline silicon wafer, the both side surfaces independently satisfy the following conditions: the temperature is 5-30 ℃, and the reaction time is 60-300 s.
11. The method of claim 1, wherein the polishing treatment is performed using a polishing liquid.
12. The method of claim 11, wherein the polishing solution is an alkaline polishing solution or an acid polishing solution.
13. The method of claim 12, wherein the polishing solution is an alkaline polishing solution.
14. The method of claim 12, wherein the chemical composition of the alkaline polishing solution is: the mixed solution of potassium hydroxide and deionized water, wherein the mass fraction of sodium potassium hydroxide in the mixed solution is 8-25%.
15. The method of claim 12, wherein the acid polishing solution is a mixture of hydrofluoric acid, nitric acid and deionized water in a volume ratio of 1 (4-6) to (1-3), the mass fraction of the hydrofluoric acid is 48-50%, and the mass fraction of the nitric acid is 68-70%.
16. The method of claim 15, wherein the hydrofluoric acid is present at 49% by weight.
17. The method of claim 15, wherein the nitric acid is present in an amount of 69% by weight.
18. The method according to claim 1, wherein the alkali polishing is performed by using an alkali polishing solution, and the reaction temperature of the alkali polishing is 40 to 100 ℃ and the reaction time is 50 to 300 seconds.
19. The method according to claim 1, wherein the polishing liquid is put in a polishing tank by a chain-type texturing machine to perform a single-side polishing treatment.
20. The method as claimed in claim 1, wherein the diamond wire polycrystalline silicon wafer is subjected to a both-side surface cleaning step before chain texturing and after single-side polishing.
21. The method of claim 20, wherein the rinsing is performed with deionized water.
22. The method of claim 20, wherein the cleaning comprises cleaning both side surfaces of the diamond wire polysilicon wafer.
23. The method as claimed in claim 1, wherein before chain texturing, diamond wire polycrystalline silicon wafer is subjected to high hardness grain modification, wherein the high hardness is as follows: the Mohs hardness is more than or equal to 9.
24. The method of claim 23, wherein the method of modifying the high hardness particles is: spraying high-hardness particles by using a nozzle, or placing the diamond wire polycrystalline silicon wafer in a solution containing the high-hardness particles for ultrasonic treatment.
25. The method of claim 24, wherein the method of modifying the high hardness particles is: a method of spraying high hardness particles using a nozzle.
26. The method according to claim 24, wherein the spraying is performed with a nozzle having an inner diameter of 5 to 8mm, a spraying pressure of 0.3 to 0.5MPa, and a spraying time of 2 to 5 seconds.
27. The method of claim 24, wherein the high hardness particles comprise any one of or a combination of at least two of silicon carbide particles, boron nitride particles, boron carbide particles, or tungsten carbide particles.
28. The method of claim 24, wherein the high hardness particles are silicon carbide particles.
29. The method of claim 24, wherein the high hardness particles have a particle size of 5 to 10 um.
30. The method as claimed in claim 1, wherein before chain texturing, diamond wire polycrystalline silicon wafer is subjected to single-side polishing treatment, and then high-hardness particle modification is performed on the surface of one side for texturing;
or before chain type texturing, the diamond wire polycrystalline silicon wafer is subjected to single-side polishing treatment, surface cleaning on two sides and high-hardness particle modification on the surface of one side for texturing in sequence.
31. The method of claim 1, wherein after the high hardness particles are modified, the modified surface is cleaned.
32. The method of claim 31, wherein the rinsing is performed with deionized water.
33. The method according to any one of claims 1-32, wherein the method comprises:
(1) the method comprises the following steps of putting alkali polishing liquid into a polishing groove by adopting a chain type texturing machine, polishing the lower surface of a diamond wire polycrystalline silicon wafer, wherein the upper surface is not polished, the reaction temperature of the alkali polishing liquid is 40-100 ℃, the reaction time is 50-300 s, and the single-side polishing of the lower surface is realized through the steps, while the upper surface is not polished and still is the original untreated surface;
the thickness of the diamond wire polycrystalline silicon wafer is 160-180 um;
(2) cleaning the surfaces of two sides of the diamond wire polycrystalline silicon wafer by adopting water;
(3) turning the diamond wire polycrystalline silicon wafer by 180 degrees by using a wafer turning machine, wherein the lower surface of the silicon wafer is an original untreated surface, and the upper surface of the silicon wafer is a polished surface;
(4) uniformly spraying silicon carbide particles on the lower surface in the step (3) by using a nozzle, and then spraying and washing by using deionized water;
(5) performing acid corrosion on the lower surface treated in the step (4) to achieve texturing, placing corrosive liquid in a texturing groove, adjusting the positions of a roller and an overflow baffle to ensure that the liquid level of the corrosive liquid in the texturing groove is 30-120 microns away from the surface of the diamond wire polycrystalline silicon wafer, performing the etching under a negative pressure air draft environment, always ensuring that the liquid level of the corrosive liquid is not in contact with the surface of the diamond wire polycrystalline silicon wafer, and ensuring that the lower surface is in contact with the corrosive liquid, wherein under the condition, the upper surface does not participate in any reaction, only the lower surface participates in the reaction, the upper surface of the obtained silicon wafer is a polished surface with high reflectivity, and the lower surface is a textured structure with low reflectivity, so that the purpose of reducing consumption of chain-type texturing chemicals is achieved;
the corrosive liquid is a mixed solution of hydrofluoric acid, nitric acid and water;
the following conditions are satisfied for corrosion of the lower surface: the temperature of acid corrosion is 5-30 ℃, and the reaction time is 60-300 s;
(6) and cleaning the obtained diamond wire polycrystalline silicon wafer by using deionized water, and drying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910330032.0A CN110034211B (en) | 2019-04-23 | 2019-04-23 | Method for reducing consumption of chain type texturing chemicals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910330032.0A CN110034211B (en) | 2019-04-23 | 2019-04-23 | Method for reducing consumption of chain type texturing chemicals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110034211A CN110034211A (en) | 2019-07-19 |
| CN110034211B true CN110034211B (en) | 2021-03-12 |
Family
ID=67239896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910330032.0A Active CN110034211B (en) | 2019-04-23 | 2019-04-23 | Method for reducing consumption of chain type texturing chemicals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110034211B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201796935U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Single surface etching equipment through corrosive acid |
| WO2013169208A1 (en) * | 2012-05-09 | 2013-11-14 | National University Of Singapore | Non-acidic isotropic etch-back for silicon wafer solar cells |
| CN104037257A (en) * | 2013-03-08 | 2014-09-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Solar energy battery and manufacture method thereof, and single-surface polishing device |
| CN104835867A (en) * | 2015-03-23 | 2015-08-12 | 中建材浚鑫科技股份有限公司 | Novel silicon slice cleaning process single face acid corrosion texturing method |
| CN205016550U (en) * | 2015-10-14 | 2016-02-03 | 苏州旭环光伏科技有限公司 | Polycrystal silicon chip single face making herbs into wool system |
| CN108417669A (en) * | 2018-03-22 | 2018-08-17 | 西安交通大学 | A kind of etching method for Buddha's warrior attendant wire cutting polysilicon chip solar cell |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832291A (en) * | 2012-08-16 | 2012-12-19 | 常州天合光能有限公司 | Felting method of solar cell |
| JP6467910B2 (en) * | 2014-12-24 | 2019-02-13 | Dic株式会社 | Urethane resin composition and leather-like sheet |
| EP3104418B8 (en) * | 2015-06-08 | 2018-04-04 | Meyer Burger (Germany) GmbH | Method and device for texturing a silicon surface |
| CN105161552A (en) * | 2015-08-18 | 2015-12-16 | 广东爱康太阳能科技有限公司 | Single surface polished N-type solar cell and preparation method thereof |
| CN105696083B (en) * | 2016-01-29 | 2018-03-09 | 盐城阿特斯协鑫阳光电力科技有限公司 | A kind of preparation method of solar battery pile face |
-
2019
- 2019-04-23 CN CN201910330032.0A patent/CN110034211B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201796935U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Single surface etching equipment through corrosive acid |
| WO2013169208A1 (en) * | 2012-05-09 | 2013-11-14 | National University Of Singapore | Non-acidic isotropic etch-back for silicon wafer solar cells |
| CN104037257A (en) * | 2013-03-08 | 2014-09-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Solar energy battery and manufacture method thereof, and single-surface polishing device |
| CN104835867A (en) * | 2015-03-23 | 2015-08-12 | 中建材浚鑫科技股份有限公司 | Novel silicon slice cleaning process single face acid corrosion texturing method |
| CN205016550U (en) * | 2015-10-14 | 2016-02-03 | 苏州旭环光伏科技有限公司 | Polycrystal silicon chip single face making herbs into wool system |
| CN108417669A (en) * | 2018-03-22 | 2018-08-17 | 西安交通大学 | A kind of etching method for Buddha's warrior attendant wire cutting polysilicon chip solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110034211A (en) | 2019-07-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8461057B2 (en) | Process for the rough-etching of silicon solar cells | |
| CN101735903B (en) | Electronic cleaning agent special for solar energy photovoltaic component | |
| CN107268087A (en) | A kind of metal catalytic etching method for the polysilicon chip reflectivity for reducing Buddha's warrior attendant wire cutting | |
| CN105932078A (en) | Texturing method of polycrystalline silicon wafer cut by diamond wire | |
| CN106229386B (en) | A kind of method that silver-bearing copper bimetallic MACE method prepares black silicon structure | |
| CN104037257A (en) | Solar energy battery and manufacture method thereof, and single-surface polishing device | |
| KR101052059B1 (en) | Surface processing method of silicon substrate for solar cell, and manufacturing method of solar cell | |
| CN102931290A (en) | Polycrystalline silicon solar cell reworking method without damaging suede | |
| CN104966762A (en) | Preparation method of texturized surface structure of crystalline silicon solar cell | |
| CN102034900A (en) | Texture etching method for quasi-monocrystalline silicon wafer | |
| CN102299205A (en) | Method for texturing surface of crystal silicon solar cell | |
| CN111105995B (en) | Cleaning and texturing method of monocrystalline silicon wafer | |
| CN104009125A (en) | Texturing technique of polycrystalline silicon chips | |
| Barrio et al. | Texturization of silicon wafers with Na2CO3 and Na2CO3/NaHCO3 solutions for heterojunction solar-cell applications | |
| CN103887369A (en) | Reworking method of silicon wafer coating film color shading slices | |
| CN110034211B (en) | Method for reducing consumption of chain type texturing chemicals | |
| CN102867880A (en) | Method for preparing double acid etching textures on polycrystalline silicon surface | |
| CN113903827A (en) | Polishing and passivating method and device for cutting surface of solar cell | |
| CN109980043A (en) | A kind of efficient volume production preparation method of the black silicon wafer of wet process | |
| WO2019042084A1 (en) | Method for selective texture preparation on surface of crystalline silicon wafer | |
| CN111554776B (en) | Cleaning method of black silicon flocking sheet | |
| CN110295395A (en) | A kind of monocrystalline silicon flocking additive and its application for adding graphene oxide quantum dot | |
| CN115663072A (en) | Texturing cleaning method and equipment suitable for manufacturing crystalline silicon heterojunction battery | |
| CN107177889A (en) | A kind of surface matte preparation method of monocrystaline silicon solar cell | |
| CN104979430A (en) | Method for preparing suede-like surface structure of crystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Applicant after: CSI Cells Co.,Ltd. Applicant after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Applicant before: CSI Cells Co.,Ltd. Applicant before: CSI SOLAR POWER GROUP Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |