CN104835867A - Novel silicon slice cleaning process single face acid corrosion texturing method - Google Patents
Novel silicon slice cleaning process single face acid corrosion texturing method Download PDFInfo
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- CN104835867A CN104835867A CN201510129177.6A CN201510129177A CN104835867A CN 104835867 A CN104835867 A CN 104835867A CN 201510129177 A CN201510129177 A CN 201510129177A CN 104835867 A CN104835867 A CN 104835867A
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- acid
- micrometers
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- 238000000034 method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 23
- 239000010703 silicon Substances 0.000 title claims abstract description 23
- 230000007797 corrosion Effects 0.000 title claims abstract description 14
- 238000005260 corrosion Methods 0.000 title claims abstract description 14
- 238000004140 cleaning Methods 0.000 title claims abstract description 10
- 239000002253 acid Substances 0.000 title claims abstract description 7
- 230000008569 process Effects 0.000 title abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 210000002268 wool Anatomy 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 6
- 210000005056 cell body Anatomy 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 2
- 210000001124 body fluid Anatomy 0.000 claims description 2
- 239000010839 body fluid Substances 0.000 claims description 2
- 238000005554 pickling Methods 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000012634 fragment Substances 0.000 abstract description 4
- 229940079593 drug Drugs 0.000 abstract 1
- 239000003814 drug Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000007639 printing Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention discloses a novel silicon slice cleaning process single face acid corrosion texturing method. The method comprises the steps of 1) adjusting the horizontal and liquid level heights of an etching groove body; 2) making up a prescription, wherein the proportion of liquid medicines comprises 200L of nitric acid of which the concentration is 68%, 20L of hydrofluoric acid of which the concentration is 40%, 80L of sulfuric acid of which the concentration is 98%, and 80L of water; 3)etching, and controlling the liquid temperate of the groove body to be 7-9 DEG C, the roller speed to be 1.5 m/min, the corrosion time to be 90 seconds, and the silicon slice texturing thickness to be 2.5 micrometers- 3.5 micrometers; 4) carrying out the subsequent process. A single face texturing removal thickness adopted by the present invention is controlled to be 2.5 micrometers- 3.5 micrometers, so that a single face texturing process is realized, the fragment percent can be reduced, and the conversion efficiency can be improved.
Description
Technical field
The invention belongs to technical field of solar batteries, the method for particularly a kind of novel Wafer Cleaning operation one side acid corrosion making herbs into wool.
Background technology
At present, the main manufacturing processes standardization of list, polycrystalline silicon solar cell, its key step is as follows:
A. chemical cleaning and surface-texturing process: make the silicon chip surface of light originally form scraggly structure, to increase the absorption of light by chemical reaction.
B. spread: P-type silicon sheet (P-type silicon is doped with trivalent impurity and makes silicon materials present P type semiconductor characteristic in silicon crystal) carries out phosphorus diffusion, POCL3 is being greater than decomposition generation PCL5 and P2O5 under the high temperature of 600 degree, and its reaction equation is as follows:
5POCl3 → P2O5+3PCl5; The P2O5 generated under diffusion temperature with pasc reaction, generate silicon dioxide (SiO2) and phosphorus atoms:
2P2O5+5Si＝5SiO2+4P
POCl3 decomposes the P2O5 produced and is deposited on silicon chip surface, P2O5 and pasc reaction generate SiO2 and phosphorus atoms, and form one deck phosphorus-silex glass at silicon chip surface, then phosphorus atoms spreads in silicon again, battery surface becomes N-type, form PN junction (as shown in Figure 1), make silicon chip have photovoltaic effect.The concentration spread, the degree of depth and uniformity directly affect the electrical property of solar cell, and the total amount square resistance diffusing into impurity is weighed, and total impurities is less, and square resistance is larger.
C. periphery etching: when the object of this step is to remove diffusion silicon chip edge formed by the conductive layer of PN junction two terminal shortcircuit, i.e. the N-type silicon of silicon chip surrounding after diffusion, prevents electric leakage.
D. depositing antireflection film (plasma enhanced chemical vapor deposition, English name Plasma Enhance Chemical Vapour Deposition, is abbreviated as PECVD): produce the process of silicon nitride at about 400 degree by chemical reaction by ammonia and silane.SIH4+NH3→SI3N4+NH3+N2
Mainly contain two class antireflective coatings at present, silicon nitride film and oxidation titanium film, mainly play antireflective and passivation.
E. print electrode: silk screen printing adopts the mode of impression by predetermined graphic printing on substrate, this equipment prints three parts by the printing of cell backside silver aluminium paste, the printing of cell backside aluminium paste and cell front side silver paste and forms.Its operation principle is: utilize silk screen visuals mesh through slurry, applies certain pressure with scraper at the slurry position of silk screen, moves towards the silk screen other end simultaneously.Ink is expressed on substrate from the mesh of visuals by scraper in movement.Viscous effect due to slurry makes trace set within the specific limits, and printing middle scraper linearly contacts with substrate with screen printing forme all the time, and contact wire moves with scraper and mobile, thus completes print stroke.
F. sinter: make the process forming alloy between the electrode of printing and silicon chip.
Current cleaning and texturing technique, adopt chemical solution to corrode the process carried out silicon chip, silicon chip is immersed in the two-sided corrosion of corrosive liquid, and its technique is: etching groove cell body volume: 380L; Nitric acid: hydrofluoric acid: water=220:36:124; Temperature: 7 ~ 8 degree, etching depth: 7 ~ 8 μm; Alkaline bath concentration: 5%+ washes; Descaling bath concentration: 7%+ washes; Air knife drying.
The defect of prior art: at present adopt two-sided making herbs into wool, removes the object that silicon chip surface cutting damage layer and surface wool manufacturing reduce reflectivity, makes battery with lower surface and the low face PN junction of reflectivity.The each corrosion thickness 7 ~ 8um of prior art, two-sided erosion removal thickness is higher, and in today that cell piece cost requirement is more and more higher, require to remove thickness more and more less, existing technique is not enough to meet need of production.
The one texture-etching side that the present invention adopts by removal THICKNESS CONTROL at 2.5 ~ 3.5um, can achieve one texture-etching side technique, can reduce fragment rate and can promote battery conversion efficiency again.
Summary of the invention
Goal of the invention: in order to overcome the defect of prior art, a kind of one texture-etching side method of special invention, when ensureing that damage layer is removed totally and surface reflectivity is low, can increase the thickness of cell piece, improves transformation efficiency and reduces fragment rate.
Technical scheme: a kind of method of novel Wafer Cleaning operation one side acid corrosion making herbs into wool, its step comprises:
1, level and the liquid level of etching groove cell body is regulated, total liquid volume in cell body: 380L, etching groove body length: 2m.
2, make up a prescription:
Liquid proportion: concentration is the nitric acid of 68%: 200L, concentration is the hydrofluoric acid of 40%: 20L, and concentration is the sulfuric acid of 98%: 80L, water: 80L;
Due to the concentration of sulfuric acid and density high, liquid viscosity can be increased, allow silicon chip in liquid level surface flotation through etching groove, ensure single-sided corrosion.(as Fig. 1)
3, etch:
Control flume body fluid temperature: 7 ~ 9 degree,
Wheel speeds: 1.5m/min,
Etching time: 90 seconds.
Silicon wafer suede corrosion thickness is controlled at 2.5 ~ 3.5 μm.
4, silicon chip successively through etching groove, washing, alkali cleaning, washing, pickling, wash, dry up operation after, make PN junction with making herbs into wool face, and carry out sending the subsequent handlings such as diffusion.
Beneficial effect of the present invention: the one texture-etching side that the present invention adopts removes THICKNESS CONTROL at 2.5 ~ 3.5 μm, achieves one texture-etching side technique, can reduce fragment rate and can promote conversion efficiency again.
Accompanying drawing explanation
Fig. 1 is Novel single-face acid corrosion process for etching schematic diagram of the present invention;
Fig. 2 is traditional two-sided process for etching gained matte microscope matte figure;
Fig. 3 is one texture-etching side technique gained matte microscope matte figure of the present invention.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, describe the present invention below in conjunction with the drawings and specific embodiments.
The corrosion thickness of the two-sided making herbs into wool of tradition is higher, and liquor strength is higher, and reaction accelerates, and the matte of formation is larger, and wide and loose.And adopting one side of the present invention, long response time to corrode making herbs into wool, the suede structure of formation is fine and closely woven, and it is more favourable to corrode the lower Surface Structures of concentration.Fig. 2, Fig. 3 are point other 3D microscope matte comparison diagrams.
Efficiency comparative's data of testing normal two-sided process for etching and present invention process are as follows:
The foregoing is only preferred embodiments of the present invention, not in order to limit the present invention, any amendment done within the spirit and principles in the present invention, equivalent replacement, improvement etc., all should be included within system configuration of the present invention.
Claims (1)
1. a method for novel Wafer Cleaning operation one side acid corrosion making herbs into wool, it is characterized in that, its step comprises:
1) level and the liquid level of etching groove cell body is regulated, total liquid volume in cell body: 380L, etching groove body length: 2m;
2) make up a prescription:
Liquid proportion: concentration is the nitric acid of 68%: 200L, concentration is the hydrofluoric acid of 40%: 20L, and concentration is the sulfuric acid of 98%: 80L, water: 80L;
3) etch:
Control flume body fluid temperature: 7 ~ 9 degree, wheel speeds: 1.5m/min, etching time: 90 seconds, makes silicon wafer suede corrosion thickness control at 2.5 ~ 3.5 μm;
4) silicon chip successively through etching groove, washing, alkali cleaning, washing, pickling, wash, dry up operation after, make PN junction with making herbs into wool face, and carry out sending the subsequent handlings such as diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510129177.6A CN104835867A (en) | 2015-03-23 | 2015-03-23 | Novel silicon slice cleaning process single face acid corrosion texturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510129177.6A CN104835867A (en) | 2015-03-23 | 2015-03-23 | Novel silicon slice cleaning process single face acid corrosion texturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104835867A true CN104835867A (en) | 2015-08-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510129177.6A Pending CN104835867A (en) | 2015-03-23 | 2015-03-23 | Novel silicon slice cleaning process single face acid corrosion texturing method |
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| CN (1) | CN104835867A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019013706A1 (en) * | 2017-07-11 | 2019-01-17 | National University Of Singapore | A method of texturing photovoltaic silicon wafers |
| CN110034211A (en) * | 2019-04-23 | 2019-07-19 | 苏州阿特斯阳光电力科技有限公司 | A method of reducing chain type texturing chemicals consumption |
| CN112058779A (en) * | 2020-08-28 | 2020-12-11 | 西安微电子技术研究所 | Surface-mounted array device cleaning device and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120160320A1 (en) * | 2009-09-21 | 2012-06-28 | Gp Solar Gmbh | Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates |
| US20120178204A1 (en) * | 2008-03-21 | 2012-07-12 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
| CN102751384A (en) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | Surface texturing method of crystalline silicon |
-
2015
- 2015-03-23 CN CN201510129177.6A patent/CN104835867A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120178204A1 (en) * | 2008-03-21 | 2012-07-12 | Alliance For Sustainable Energy, Llc | Copper-assisted, anti-reflection etching of silicon surfaces |
| US20120160320A1 (en) * | 2009-09-21 | 2012-06-28 | Gp Solar Gmbh | Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates |
| CN102751384A (en) * | 2012-07-07 | 2012-10-24 | 蚌埠玻璃工业设计研究院 | Surface texturing method of crystalline silicon |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019013706A1 (en) * | 2017-07-11 | 2019-01-17 | National University Of Singapore | A method of texturing photovoltaic silicon wafers |
| CN110034211A (en) * | 2019-04-23 | 2019-07-19 | 苏州阿特斯阳光电力科技有限公司 | A method of reducing chain type texturing chemicals consumption |
| CN110034211B (en) * | 2019-04-23 | 2021-03-12 | 苏州阿特斯阳光电力科技有限公司 | Method for reducing consumption of chain type texturing chemicals |
| CN112058779A (en) * | 2020-08-28 | 2020-12-11 | 西安微电子技术研究所 | Surface-mounted array device cleaning device and method |
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Application publication date: 20150812 |