CN105514219A - Method of forming all-back-contact electrode solar battery ultra-low surface concentration front surface field - Google Patents
Method of forming all-back-contact electrode solar battery ultra-low surface concentration front surface field Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 48
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000011574 phosphorus Substances 0.000 claims abstract description 47
- 230000003647 oxidation Effects 0.000 claims abstract description 24
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 40
- 239000001301 oxygen Substances 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000012298 atmosphere Substances 0.000 claims description 21
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 11
- 238000002161 passivation Methods 0.000 abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 23
- 238000000151 deposition Methods 0.000 description 12
- 125000004437 phosphorous atom Chemical group 0.000 description 7
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明公开了一种全背电极太阳电池超低表面浓度前表面场的形成方法，采用间接磷源法形成前表面场和钝化氧化层，包括一步空管运行饱和步骤及紧接一步空管运行饱和步骤之后的氧化步骤；该方法所得前表面场的表面浓度可达3E17cm-3到1E18cm-3，结深为0.1μm-0.2μm，所得前表面场同时覆盖了一层5nm到15nm的热氧化硅薄层。应用本发明所述超低表面浓度前表面场的IBC电池，其短波段的内量子效率高达95%以上。
The invention discloses a method for forming a front surface field with an ultra-low surface concentration of a full-back electrode solar cell. An indirect phosphorus source method is used to form a front surface field and a passivation oxide layer, including a step of empty tube operation saturation step followed by a step of empty tube Run an oxidation step after the saturation step; this method results in a front surface field with a surface concentration of 3E17cm -3 to 1E18cm -3 and a junction depth of 0.1μm-0.2μm, and the resulting front surface field is simultaneously covered with a layer of 5nm to 15nm thermal thin layer of silicon oxide. The IBC battery applying the ultra-low surface concentration front surface field of the present invention has an internal quantum efficiency of over 95% in the short-wave band.
Description
技术领域 technical field
本发明涉及电池前表面场的形成领域，具体涉及一种全背电极太阳电池超低表面浓度前表面场的形成方法。 The invention relates to the field of forming the front surface field of a battery, in particular to a method for forming the front surface field of an ultra-low surface concentration of a full-back electrode solar cell.
背景技术 Background technique
全背电极太阳电池，又叫IBC（Interdigitatedbackcontact指交叉背接触）电池，是指电池正面无电极，正负两极金属栅线呈指状交叉排列于电池背面。由于正面无遮挡带来的高效率使得IBC电池备受青睐。由于P-N结位于电池的背面，光生载流子的产生主要在前表面（即正面）附近，载流子需要穿过整个硅片厚度到达背面的地方才能被收集。如果正面钝化不好，光生载流子会很容易在到达背面之前就被复合而降低效率。因此，良好的正面钝化显得尤为重要。常见的IBC电池正面钝化的手段是在前表面引入一个N+N的高低结，称之为前表面场。前表面场不仅可以实现更好的钝化，同时可以提高电池的稳定性，使得其对UV辐照具有更高的耐受性。前表面场一般是通过扩散的方法形成，在高温下，通过在硅片表面沉积磷源，在小氧（小流量氧气）的作用下，磷源与氧反应生成P2O5，P2O5再与硅反应置换出磷原子，磷原子通过高温扩散进入硅片里而达到掺杂的目的。前表面场的掺杂浓度越高，钝化后的暗饱和电流密度J0也越高，复合越大。因此，前表面场一般为低表面浓度的浅结扩散。现有技术中通过在硅片表面沉积磷源的方式扩散得到的前表面场的表面浓度一般在1E19cm-3以上，很难得到更低表面浓度的浅结掺杂曲线。 Full back electrode solar cell, also known as IBC (Interdigitated back contact) battery, means that the battery has no electrodes on the front, and the positive and negative metal grid lines are arranged on the back of the battery in a finger shape. Due to the high efficiency brought by the unobstructed front, IBC batteries are favored. Since the PN junction is located on the back of the cell, the generation of photogenerated carriers is mainly near the front surface (ie, the front side), and the carriers need to pass through the entire thickness of the silicon wafer to reach the back side to be collected. If the passivation of the front side is not good, the photogenerated carriers will be easily recombined before reaching the back side, reducing the efficiency. Therefore, good front passivation is particularly important. The common method of front passivation of IBC battery is to introduce an N+N high-low junction on the front surface, which is called the front surface field. The front surface field can not only achieve better passivation, but also improve the stability of the cell, making it more resistant to UV radiation. The front surface field is generally formed by diffusion. At high temperature, by depositing a phosphorus source on the surface of the silicon wafer, under the action of small oxygen (small flow of oxygen), the phosphorus source reacts with oxygen to generate P 2 O 5 , P 2 O 5 Then react with silicon to replace phosphorus atoms, and phosphorus atoms diffuse into silicon wafers through high temperature to achieve the purpose of doping. The higher the doping concentration of the front surface field, the higher the dark saturation current density J 0 after passivation, and the greater the recombination. Therefore, the front surface field is generally shallow junction diffusion with low surface concentration. In the prior art, the surface concentration of the front surface field obtained by diffusion by depositing a phosphorus source on the surface of the silicon wafer is generally above 1E19cm -3 , and it is difficult to obtain a shallow junction doping curve with a lower surface concentration.
发明内容 Contents of the invention
本发明提供了一种全背电极太阳电池超低表面浓度前表面场的形成方法，采用间接磷源法形成前表面场和钝化氧化层，所得前表面场的表面浓度可达3E17cm-3到1E18cm-3，结深为0.1μm-0.2μm，所得前表面场同时覆盖了一层5nm到15nm的热氧化硅薄层。 The invention provides a method for forming a front surface field with an ultra-low surface concentration of a full-back electrode solar cell. The front surface field and a passivation oxide layer are formed by using an indirect phosphorus source method, and the surface concentration of the obtained front surface field can reach 3E17cm -3 to 1E18cm -3 , the junction depth is 0.1μm-0.2μm, and the obtained front surface field is covered with a 5nm to 15nm thermal silicon oxide thin layer at the same time.
一种全背电极太阳电池超低表面浓度前表面场的形成方法，包括一步空管运行饱和步骤及紧接一步空管运行饱和步骤之后的氧化步骤； A method for forming a front surface field with an ultra-low surface concentration of an all-back electrode solar cell, comprising a step of saturation in empty tube operation and an oxidation step immediately after the saturation step in empty tube operation;
所述一步空管运行饱和步骤包括：在800℃-810℃于氮气和氧气气氛中空舟进舟，再在800℃-950℃于氧气、氮气以及携带磷源的氮气气氛中进行磷源沉积，然后在氮气气氛中于800℃-810℃出舟； The one-step empty-pipe operation saturation step includes: entering the boat into the boat at 800°C-810°C in an atmosphere of nitrogen and oxygen, and then performing phosphorus source deposition at 800°C-950°C in an atmosphere of oxygen, nitrogen, and nitrogen carrying a phosphorus source, Then take out the boat at 800°C-810°C in a nitrogen atmosphere;
所述氧化步骤包括：在800℃-810℃于氮气和氧气气氛中装硅片进舟，再在800℃-950℃于氧气和氮气气氛中进行残余磷源扩散和氧化，然后在氮气气氛中于800℃-810℃出舟。 The oxidation step includes: loading silicon wafers into the boat in an atmosphere of nitrogen and oxygen at 800°C-810°C, then diffusing and oxidizing the residual phosphorus source in an atmosphere of oxygen and nitrogen at 800°C-950°C, and then performing the oxidation in a nitrogen atmosphere Out of the boat at 800°C-810°C.
本发明方法一步空管运行饱和步骤里包括通磷源的步骤，磷源会部分残留在舟上和炉管里。氧化步骤里不通磷源，利用一步空管运行饱和步骤中残留的磷源对硅片表面形成低掺杂。 The one-step empty tube operation saturation step of the method of the present invention includes the step of feeding the phosphorus source, and the phosphorus source will partially remain on the boat and in the furnace tube. In the oxidation step, the phosphorus source is not connected, and the remaining phosphorus source in the saturation step is used to form a low doping on the surface of the silicon wafer.
为了达到更好的发明效果，优选： In order to achieve a better inventive effect, preferably:
所述一步空管运行饱和步骤中磷源沉积过程，其中携带磷源的氮气流量为200标准毫升/分钟（sccm）-1000sccm，氧气流量为100sccm-500sccm。 In the phosphorus source deposition process in the one-step empty tube operation saturation step, the nitrogen flow carrying the phosphorus source is 200 sccm-1000 sccm, and the oxygen flow is 100 sccm-500 sccm.
所述一步空管运行饱和步骤中磷源沉积的时间为10min-30min。 The phosphorus source deposition time in the one-step empty pipe operation saturation step is 10min-30min.
所述一步空管运行饱和步骤中空舟进舟过程，其中氮气的流量远大于氧气的流量，这种氮气和氧气气氛一般称为大N2加小氧气气氛。 Said one-step empty-pipe operation saturation step is an empty boat-in-boat process, wherein the flow rate of nitrogen gas is much greater than the flow rate of oxygen gas, and this nitrogen and oxygen atmosphere is generally called a large N2 plus small oxygen atmosphere.
所述氧化步骤中残余磷源扩散和氧化的时间为10min-50min，使炉管内和石英舟上的残留磷源沉积到硅片表面，磷原子扩散进入硅片里面形成N+掺杂区，同时由于氧气的存在会在硅片表面生长一层氧化硅薄层。 The time for diffusion and oxidation of the residual phosphorus source in the oxidation step is 10min-50min, so that the residual phosphorus source in the furnace tube and on the quartz boat is deposited on the surface of the silicon wafer, and the phosphorus atoms diffuse into the silicon wafer to form an N+ doped region. The presence of oxygen will grow a thin layer of silicon oxide on the surface of the silicon wafer.
所述氧化步骤中装硅片进舟过程，其中氮气的流量远大于氧气的流量。 In the process of loading silicon wafers into the boat in the oxidation step, the flow rate of nitrogen gas is much greater than that of oxygen gas.
本发明方法形成的超低表面浓度前表面场，能够同时达到形成前表面场和生长热氧化层进行钝化的目的。为了达到更好的钝化效果，以及电池前表面的减反射要求，通常可在本发明前表面场工艺完成后采用本领域现有技术在硅片表面覆盖氮化硅（SiNx）膜，本发明方法形成的前表面场在覆盖SiNx膜钝化后，绒面上的J0低至5fA/cm2-10fA/cm2。 The ultra-low surface concentration front surface field formed by the method of the invention can simultaneously achieve the purpose of forming the front surface field and growing a thermal oxide layer for passivation. In order to achieve a better passivation effect and anti-reflection requirements on the front surface of the battery, it is usually possible to cover the surface of the silicon wafer with a silicon nitride (SiNx) film using the existing technology in the field after the completion of the front surface field process of the present invention. After the front surface field formed by the method is passivated by covering the SiNx film, the J 0 on the suede surface is as low as 5fA/cm 2 -10fA/cm 2 .
应用本发明所述超低表面浓度前表面场的IBC电池的制备采用本领域现有技术。 The preparation of the IBC battery applying the ultra-low surface concentration front surface field of the present invention adopts the prior art in the field.
本发明的有益效果： Beneficial effects of the present invention:
本发明方法形成的前表面场表面浓度在3E17cm-3到1E18cm-3，结深在0.1μm-0.2μm，在形成前表面场的同时生长5nm-15nm的氧化硅薄层钝化，再经现有的SiNx钝化后，在绒面上的J0可低至5fA/cm2-10fA/cm2。极大地降低了前表面的复合，从而使载流子的收集效率更高。应用本发明所述超低表面浓度前表面场的IBC电池，其短波段的内量子效率高达95%以上。 The surface concentration of the front surface field formed by the method of the present invention is 3E17cm -3 to 1E18cm -3 , the junction depth is 0.1μm-0.2μm, and a 5nm-15nm silicon oxide thin layer is grown while forming the front surface field for passivation. After passivation of some SiNx, the J 0 on the suede surface can be as low as 5fA/cm 2 -10fA/cm 2 . The recombination of the front surface is greatly reduced, resulting in higher carrier collection efficiency. The IBC battery applying the ultra-low surface concentration front surface field of the present invention has an internal quantum efficiency of over 95% in the short-wave band.
附图说明 Description of drawings
图1为本发明方法得到的前表面场的掺杂浓度曲线图，其中横坐标Depth代表深度，纵坐标Concentration代表磷原子掺杂浓度。 Fig. 1 is a doping concentration curve diagram of the front surface field obtained by the method of the present invention, wherein the abscissa Depth represents the depth, and the ordinate Concentration represents the phosphorus atom doping concentration.
具体实施方式 detailed description
以下结合实施例对本发明作进一步详细描述。 Below in conjunction with embodiment the present invention is described in further detail.
实施例1Example 1
全背电极太阳电池超低表面浓度前表面场的形成，包括一步空管运行饱和步骤及紧接一步空管运行饱和步骤之后的氧化步骤。 The formation of the surface field before the ultra-low surface concentration of the full-back electrode solar cell includes a one-step empty-tube operation saturation step and an oxidation step immediately after the empty-tube operation saturation step.
一步空管运行饱和步骤包括： One-step empty-pipe operation saturation steps include:
（1）800℃，大氮气（N2）加小氧气气氛下空舟进舟； (1) 800°C, under the atmosphere of large nitrogen (N 2 ) and small oxygen;
（2）大N2加小氧气气氛下升温至磷源沉积温度850℃； (2) Increase the temperature to a phosphorus source deposition temperature of 850°C under a large N 2 plus small oxygen atmosphere;
（3）850℃磷源沉积，小N2携带磷源，流量为650sccm，同时通小氧气与磷源反应，小氧气流量为300sccm，并调节大N2流量来维持通过炉管的气体总量，沉积时间20min； (3) Phosphorus source deposition at 850°C, small N 2 carries phosphorus source, the flow rate is 650 sccm, and small oxygen reacts with phosphorus source at the same time, the small oxygen flow rate is 300 sccm, and the large N 2 flow rate is adjusted to maintain the total amount of gas passing through the furnace tube , deposition time 20min;
（4）吹扫，关闭磷源阀门，只通小N2吹扫磷源管路，大N2维持炉管气体总量； (4) Purge, close the phosphorus source valve, only purge the phosphorus source pipeline with small N 2 , and maintain the total gas volume of the furnace tube with large N 2 ;
（5）大N2气氛下将温度降低至800℃，N2气氛中出舟。 (5) Lower the temperature to 800°C under a large N 2 atmosphere, and take out the boat in an N 2 atmosphere.
氧化步骤包括：（1）800℃，大N2加小氧气气氛下装硅片进舟； Oxidation steps include: (1) 800°C, under a large N2 plus small oxygen atmosphere, silicon wafers are loaded into the boat;
（2）大N2加小氧气气氛下升温至850℃； (2) Increase the temperature to 850°C under a large N 2 plus small oxygen atmosphere;
（3）氧化，在850℃于氧气加氮气气氛下维持30min进行残余磷源扩散和氧化，使炉管内和石英舟上的残留磷源沉积到硅片表面，磷原子扩散进入硅片里面形成N+掺杂区，同时由于氧气的存在会在硅片表面生长一层10nm的薄氧化硅层； (3) Oxidation, maintain at 850°C for 30 minutes under an atmosphere of oxygen and nitrogen to carry out diffusion and oxidation of residual phosphorus source, so that the residual phosphorus source in the furnace tube and on the quartz boat is deposited on the surface of the silicon wafer, and the phosphorus atoms diffuse into the silicon wafer to form N+ Doping area, and at the same time, a thin silicon oxide layer of 10nm will be grown on the surface of the silicon wafer due to the presence of oxygen;
（4）大N2气氛下将温度降低至800℃，N2气氛中出舟。 (4) Lower the temperature to 800°C under a large N 2 atmosphere, and take out the boat in an N 2 atmosphere.
形成的前表面场表面浓度在7E17cm-3，结深在0.15μm。形成的前表面场在覆盖SiNx膜钝化后，绒面上的J0低至5fA/cm2-10fA/cm2。应用所得超低表面浓度前表面场的IBC电池，其短波段的内量子效率高达95%以上。 The surface concentration of the formed front surface field is 7E17cm -3 , and the junction depth is 0.15μm. After the formed front surface field is passivated by the covering SiNx film, the J 0 on the suede surface is as low as 5fA/cm 2 -10fA/cm 2 . The IBC battery with the obtained ultra-low surface concentration front surface field has an internal quantum efficiency of more than 95% in the short-wave band.
实施例2Example 2
全背电极太阳电池超低表面浓度前表面场的形成，包括一步空管运行饱和步骤及紧接一步空管运行饱和步骤之后的氧化步骤。 The formation of the surface field before the ultra-low surface concentration of the full-back electrode solar cell includes a one-step empty-tube operation saturation step and an oxidation step immediately after the empty-tube operation saturation step.
一步空管运行饱和步骤包括： One-step empty-pipe operation saturation steps include:
（1）800℃，大N2加小氧气气氛下空舟进舟； (1) 800°C, under the atmosphere of large N 2 and small oxygen;
（2）800℃磷源沉积，小N2携带磷源，流量为200sccm，同时通小氧气与磷源反应，小氧气流量为100sccm，并调节大N2流量来维持通过炉管的气体总量，沉积时间30min； (2) Phosphorus source deposition at 800°C, small N 2 carries the phosphorus source, the flow rate is 200 sccm, and at the same time, small oxygen reacts with the phosphorus source, the small oxygen flow rate is 100 sccm, and the large N 2 flow rate is adjusted to maintain the total amount of gas passing through the furnace tube , deposition time 30min;
（3）吹扫，关闭磷源阀门，只通小N2吹扫磷源管路，大N2维持炉管气体总量； (3) Purge, close the phosphorus source valve, only purge the phosphorus source pipeline with small N 2 , and maintain the total gas volume of the furnace tube with large N 2 ;
（4）大N2气氛下将温度降低至800℃，N2气氛中出舟。 (4) Lower the temperature to 800°C under a large N 2 atmosphere, and take out the boat in an N 2 atmosphere.
氧化步骤包括：（1）800℃，大N2加小氧气气氛下装硅片进舟； Oxidation steps include: (1) 800°C, under a large N2 plus small oxygen atmosphere, silicon wafers are loaded into the boat;
（2）氧化，在800℃于氮气加氧气气氛下维持30min进行残余磷源扩散和氧化，使炉管内和石英舟上的残留磷源沉积到硅片表面，磷原子扩散进入硅片里面形成N+掺杂区，同时由于氧气的存在会在硅片表面生长一层5nm的薄氧化硅层； (2) Oxidation, maintaining at 800°C for 30 minutes in an atmosphere of nitrogen and oxygen to diffuse and oxidize the residual phosphorus source, so that the residual phosphorus source in the furnace tube and on the quartz boat is deposited on the surface of the silicon wafer, and the phosphorus atoms diffuse into the silicon wafer to form N+ Doping area, and at the same time due to the presence of oxygen, a thin silicon oxide layer of 5nm will be grown on the surface of the silicon wafer;
（3）大N2气氛下将温度降低至800℃，N2气氛中出舟。 (3) Lower the temperature to 800°C under a large N 2 atmosphere, and take out the boat in an N 2 atmosphere.
形成的前表面场表面浓度在3E17cm-3，结深在0.1μm。形成的前表面场在覆盖SiNx膜钝化后，绒面上的J0低至5fA/cm2-10fA/cm2。应用所得超低表面浓度前表面场的IBC电池，其短波段的内量子效率高达95%以上。 The surface concentration of the formed front surface field is 3E17cm -3 , and the junction depth is 0.1μm. After the formed front surface field is passivated by the covering SiNx film, the J 0 on the textured surface is as low as 5fA/cm 2 -10fA/cm 2 . The IBC battery with the obtained ultra-low surface concentration front surface field has an internal quantum efficiency of more than 95% in the short-wave band.
实施例3Example 3
全背电极太阳电池超低表面浓度前表面场的形成，包括一步空管运行饱和步骤及紧接一步空管运行饱和步骤之后的氧化步骤。 The formation of the surface field before the ultra-low surface concentration of the full-back electrode solar cell includes a one-step empty-tube operation saturation step and an oxidation step immediately after the empty-tube operation saturation step.
一步空管运行饱和步骤包括： One-step empty-pipe operation saturation steps include:
（1）810℃，大N2加小氧气气氛下空舟进舟； (1) 810°C, under the atmosphere of large N 2 and small oxygen;
（2）大N2加小氧气气氛下升温至磷源沉积温度950℃； (2) Increase the temperature to a phosphorus source deposition temperature of 950°C under a large N 2 plus small oxygen atmosphere;
（3）950℃磷源沉积，小N2携带磷源，流量为1000sccm，同时通小氧气与磷源反应，小氧气流量为500sccm，并调节大N2流量来维持通过炉管的气体总量，沉积时间10min； (3) Phosphorus source deposition at 950°C, small N 2 carries phosphorus source, the flow rate is 1000 sccm, and small oxygen reacts with phosphorus source at the same time, the small oxygen flow rate is 500 sccm, and the large N 2 flow rate is adjusted to maintain the total amount of gas passing through the furnace tube , deposition time 10min;
（4）吹扫，关闭磷源阀门，只通小N2吹扫磷源管路，大N2维持炉管气体总量； (4) Purge, close the phosphorus source valve, only purge the phosphorus source pipeline with small N 2 , and maintain the total gas volume of the furnace tube with large N 2 ;
（5）大N2气氛下将温度降低至810℃，N2气氛中出舟。 (5) Lower the temperature to 810°C under a large N 2 atmosphere, and take out the boat in an N 2 atmosphere.
氧化步骤包括：（1）810℃，大N2加小氧气气氛下装硅片进舟； Oxidation steps include: (1) 810°C, under a large N2 plus small oxygen atmosphere, silicon wafers are loaded into the boat;
（2）大N2加小氧气气氛下升温至950℃； (2) Increase the temperature to 950°C under a large N 2 plus small oxygen atmosphere;
（3）氧化，在950℃于氮气加氧气气氛下维持30min进行残余磷源扩散和氧化，使炉管内和石英舟上的残留磷源沉积到硅片表面，磷原子扩散进入硅片里面形成N+掺杂区，同时由于氧气的存在会在硅片表面生长一层15nm的薄氧化硅层； (3) Oxidation, maintain at 950°C for 30 minutes in an atmosphere of nitrogen and oxygen to diffuse and oxidize the residual phosphorus source, so that the residual phosphorus source in the furnace tube and on the quartz boat is deposited on the surface of the silicon wafer, and the phosphorus atoms diffuse into the silicon wafer to form N+ Doped area, and at the same time, a thin silicon oxide layer of 15nm will be grown on the surface of the silicon wafer due to the presence of oxygen;
（4）大N2气氛下将温度降低至810℃，N2气氛中出舟。 (4) Lower the temperature to 810°C in a large N 2 atmosphere, and take out the boat in a N 2 atmosphere.
形成的前表面场表面浓度在1E18cm-3，结深在0.2μm。形成的前表面场在覆盖SiNx膜钝化后，绒面上的J0低至5fA/cm2-10fA/cm2。应用所得超低表面浓度前表面场的IBC电池，其短波段的内量子效率高达95%以上。 The surface concentration of the formed front surface field is 1E18cm -3 , and the junction depth is 0.2μm. After the formed front surface field is passivated by the covering SiNx film, the J 0 on the suede surface is as low as 5fA/cm 2 -10fA/cm 2 . The IBC battery with the obtained ultra-low surface concentration front surface field has an internal quantum efficiency of more than 95% in the short-wave band.
本发明全背电极太阳电池超低表面浓度前表面场的形成方法中参数的变化并不影响全背电极太阳电池超低表面浓度前表面场的制备，因此本发明形成方法中任意参数的组合均可实现全背电极太阳电池超低表面浓度前表面场的制备，得到表面浓度在3E17cm-3-1E18cm-3、结深为0.1μm-0.2μm的前表面场。在此不再赘述。 The change of parameters in the method for forming the ultra-low surface concentration front surface field of the full back electrode solar cell of the present invention does not affect the preparation of the ultra-low surface concentration front surface field of the full back electrode solar cell, so any combination of parameters in the formation method of the present invention can The preparation of the ultra-low surface concentration front surface field of the full back electrode solar cell can be realized, and the front surface field with a surface concentration of 3E17cm -3 -1E18cm -3 and a junction depth of 0.1μm-0.2μm can be obtained. I won't repeat them here.
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| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
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