CN105514219A - Method of forming all-back-contact electrode solar battery ultra-low surface concentration front surface field - Google Patents
Method of forming all-back-contact electrode solar battery ultra-low surface concentration front surface field Download PDFInfo
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- CN105514219A CN105514219A CN201610050192.6A CN201610050192A CN105514219A CN 105514219 A CN105514219 A CN 105514219A CN 201610050192 A CN201610050192 A CN 201610050192A CN 105514219 A CN105514219 A CN 105514219A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 45
- 239000011574 phosphorus Substances 0.000 claims abstract description 45
- 230000003647 oxidation Effects 0.000 claims abstract description 25
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- 239000001301 oxygen Substances 0.000 claims description 40
- 239000012298 atmosphere Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 12
- 238000000151 deposition Methods 0.000 description 7
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 125000004437 phosphorous atom Chemical group 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 239000002775 capsule Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a method of forming an all-back-contact electrode solar battery ultra-low surface concentration front surface field. The front surface field and a passivation and oxidation layer are formed through an indirect phosphorus source method, and the method comprises a blank pipe operation saturation step and an oxidation step which closely follows the blank pipe operation saturation step. By means of the method, the surface concentration of the obtained front surface field can reach 3E17-1E18cm<-3>, the junction depth is 0.1-0.2 microns, and meanwhile the obtained front surface field is coated with a thermal silicon oxide thin layer with the thickness ranging from 5 nm to 15 nm. The internal quantum efficiency of the short-wave band of an IBC battery applying the ultra-low surface concentration front surface field can reach 95% and above.
Description
Technical field
The present invention relates to the formation field of battery front-surface field, be specifically related to a kind of formation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field.
Background technology
All back-contact electrodes solar cell, makes again IBC(Interdigitatedbackcontact refer to intersect back contacts) battery, refer to that battery front side is electrodeless, positive and negative polarities metal grid lines is that interdigitate is arranged in cell backside.The high efficiency brought because front is unobstructed makes IBC battery enjoy favor.Because P-N junction is positioned at the back side of battery, the generation of photo-generated carrier is mainly near front surface (i.e. front), and charge carrier needs the place arriving the back side through whole silicon wafer thickness just can be collected.If front passivation is bad, photo-generated carrier can be easy to just be lowered efficiency by compound before the arrival back side.Therefore, good front passivation seems particularly important.The means of common IBC battery front side passivation introduce the height knot of a N+N, is referred to as front-surface field.Front-surface field not only can realize better passivation, can improve the stability of battery simultaneously, make it have higher tolerance to UV irradiation.Front-surface field is generally formed by the method for diffusion, and at high temperature, by silicon chip surface sedimentary phosphor source, under the effect of little oxygen (low discharge oxygen), phosphorus source and oxygen react and generates P
2o
5, P
2o
5displace phosphorus atoms with pasc reaction again, phosphorus atoms enters the object reaching doping in silicon chip by High temperature diffusion.The doping content of front-surface field is higher, the dark saturation current density J after passivation
0also higher, compound is larger.Therefore, front-surface field is generally the shallow junction diffusion of low surface concentration.By spreading the surface concentration of the front-surface field obtained generally at 1E19cm in the mode in silicon chip surface sedimentary phosphor source in prior art
-3above, the shallow junction doping curve obtaining lower surface concentration is difficult to.
Summary of the invention
The invention provides a kind of formation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field, adopt indirect phosphorus source method to form front-surface field and passivating oxide layer, the surface concentration of gained front-surface field can reach 3E17cm
-3to 1E18cm
-3, junction depth is 0.1 μm-0.2 μm, and gained front-surface field covers the thermal oxidation silicon thin layer of one deck 5nm to 15nm simultaneously.
A formation method for all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprise a step blank pipe run saturation process and immediately a step blank pipe run the oxidation step after saturation process;
A described step blank pipe runs saturation process and comprises: enter boat at 800 DEG C-810 DEG C in nitrogen and oxygen atmosphere hollow boat, again 800 DEG C-950 DEG C in oxygen, nitrogen and carry phosphorus source nitrogen atmosphere in carry out phosphorus source deposition, then in nitrogen atmosphere, go out boat in 800 DEG C-810 DEG C;
Described oxidation step comprises: in nitrogen and oxygen atmosphere, fill silicon chip at 800 DEG C-810 DEG C and enter boat, then in oxygen and nitrogen atmosphere, carry out the diffusion of residual phosphorus source and oxidation at 800 DEG C-950 DEG C, then in nitrogen atmosphere, go out boat in 800 DEG C-810 DEG C.
The inventive method one step blank pipe runs the step comprising logical phosphorus source in saturation process, and phosphorus source can partly remain on boat with in boiler tube.Obstructed phosphorus source in oxidation step, utilizes a step blank pipe to run phosphorus source residual in saturation process and is formed silicon chip surface low-doped.
In order to reach better invention effect, preferably:
A described step blank pipe runs phosphorus source deposition process in saturation process, and the nitrogen flow wherein carrying phosphorus source is 200 standard milliliters/minute (sccm)-1000sccm, and oxygen flow is 100sccm-500sccm.
The time that a described step blank pipe runs phosphorus source deposition in saturation process is 10min-30min.
A described step blank pipe runs saturation process hollow boat and enters boat process, and wherein the flow of nitrogen is much larger than the flow of oxygen, and this nitrogen and oxygen atmosphere are commonly referred to as large N
2add little oxygen atmosphere.
In described oxidation step, the time of the diffusion of residual phosphorus source and oxidation is 10min-50min, the residual phosphorus source in boiler tube and on quartz boat is made to deposit to silicon chip surface, phosphorus atoms diffuses into inside silicon chip and forms N+ doped region, simultaneously because the existence of oxygen can grow one deck thin layer of silicon oxide at silicon chip surface.
Fill silicon chip in described oxidation step and enter boat process, wherein the flow of nitrogen is much larger than the flow of oxygen.
The ultra low surface concentration front-surface field that the inventive method is formed, can reach simultaneously form front-surface field and grow the object that thermal oxide layer carries out passivation.In order to reach better passivation effect, and the antireflective requirement of battery front surface, usually can before this invention surface field technique complete after employing state of the art cover silicon nitride (SiNx) film at silicon chip surface, the front-surface field that the inventive method is formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.
The preparation of applying the IBC battery of ultra low surface concentration front-surface field of the present invention adopts state of the art.
Beneficial effect of the present invention:
The front-surface field surface concentration that the inventive method is formed is at 3E17cm
-3to 1E18cm
-3, junction depth, at 0.1 μm-0.2 μm, grows the thin layer of silicon oxide passivation of 5nm-15nm while forming front-surface field, then after existing SiNx passivation, the J on matte
05fA/cm can be low to moderate
2-10fA/cm
2.Significantly reduce the compound of front surface, thus make the collection efficiency of charge carrier higher.Apply the IBC battery of ultra low surface concentration front-surface field of the present invention, the internal quantum efficiency of its short-wave band is up to more than 95%.
Accompanying drawing explanation
Fig. 1 is the doping content curve chart of the front-surface field that the inventive method obtains, and wherein abscissa Depth represents the degree of depth, ordinate Concentration phosphor atom doping content.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail.
embodiment 1
The formation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprise a step blank pipe run saturation process and immediately a step blank pipe run the oxidation step after saturation process.
One step blank pipe runs saturation process and comprises:
(1) 800 DEG C, large nitrogen (N
2) add little oxygen atmosphere under empty boat enter boat;
(2) large N
2phosphorus source depositing temperature 850 DEG C is warming up under adding little oxygen atmosphere;
(3) 850 DEG C of phosphorus source depositions, little N
2carry phosphorus source, flow is 650sccm, and logical little oxygen and phosphorus source are reacted simultaneously, and little oxygen flow is 300sccm, and regulates large N
2flow maintains the gas gross by boiler tube, sedimentation time 20min;
(4) purge, close phosphorus source valve, only logical little N
2purge phosphorus source capsule road, large N
2maintain boiler tube gas gross;
(5) large N
2under atmosphere, temperature is reduced to 800 DEG C, N
2boat is gone out in atmosphere.
Oxidation step comprises: (1) 800 DEG C, large N
2fill silicon chip under adding little oxygen atmosphere and enter boat;
(2) large N
2850 DEG C are warming up under adding little oxygen atmosphere;
(3) be oxidized, under oxygen adds nitrogen atmosphere, maintain 30min at 850 DEG C and carry out the diffusion of residual phosphorus source and oxidation, the residual phosphorus source in boiler tube and on quartz boat is made to deposit to silicon chip surface, phosphorus atoms diffuses into inside silicon chip and forms N+ doped region, simultaneously because the thin silicon oxide layer that grow one deck 10nm at silicon chip surface is understood in the existence of oxygen;
(4) large N
2under atmosphere, temperature is reduced to 800 DEG C, N
2boat is gone out in atmosphere.
The front-surface field surface concentration formed is at 7E17cm
-3, junction depth is at 0.15 μm.The front-surface field formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.The IBC battery of application gained ultra low surface concentration front-surface field, the internal quantum efficiency of its short-wave band is up to more than 95%.
embodiment 2
The formation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprise a step blank pipe run saturation process and immediately a step blank pipe run the oxidation step after saturation process.
One step blank pipe runs saturation process and comprises:
(1) 800 DEG C, large N
2under adding little oxygen atmosphere, empty boat enters boat;
(2) 800 DEG C of phosphorus source depositions, little N
2carry phosphorus source, flow is 200sccm, and logical little oxygen and phosphorus source are reacted simultaneously, and little oxygen flow is 100sccm, and regulates large N
2flow maintains the gas gross by boiler tube, sedimentation time 30min;
(3) purge, close phosphorus source valve, only logical little N
2purge phosphorus source capsule road, large N
2maintain boiler tube gas gross;
(4) large N
2under atmosphere, temperature is reduced to 800 DEG C, N
2boat is gone out in atmosphere.
Oxidation step comprises: (1) 800 DEG C, large N
2fill silicon chip under adding little oxygen atmosphere and enter boat;
(2) be oxidized, under nitrogen oxygen atmosphere, maintain 30min at 800 DEG C and carry out the diffusion of residual phosphorus source and oxidation, the residual phosphorus source in boiler tube and on quartz boat is made to deposit to silicon chip surface, phosphorus atoms diffuses into inside silicon chip and forms N+ doped region, simultaneously because the thin silicon oxide layer that grow one deck 5nm at silicon chip surface is understood in the existence of oxygen;
(3) large N
2under atmosphere, temperature is reduced to 800 DEG C, N
2boat is gone out in atmosphere.
The front-surface field surface concentration formed is at 3E17cm
-3, junction depth is at 0.1 μm.The front-surface field formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.The IBC battery of application gained ultra low surface concentration front-surface field, the internal quantum efficiency of its short-wave band is up to more than 95%.
embodiment 3
The formation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, comprise a step blank pipe run saturation process and immediately a step blank pipe run the oxidation step after saturation process.
One step blank pipe runs saturation process and comprises:
(1) 810 DEG C, large N
2under adding little oxygen atmosphere, empty boat enters boat;
(2) large N
2phosphorus source depositing temperature 950 DEG C is warming up under adding little oxygen atmosphere;
(3) 950 DEG C of phosphorus source depositions, little N
2carry phosphorus source, flow is 1000sccm, and logical little oxygen and phosphorus source are reacted simultaneously, and little oxygen flow is 500sccm, and regulates large N
2flow maintains the gas gross by boiler tube, sedimentation time 10min;
(4) purge, close phosphorus source valve, only logical little N
2purge phosphorus source capsule road, large N
2maintain boiler tube gas gross;
(5) large N
2under atmosphere, temperature is reduced to 810 DEG C, N
2boat is gone out in atmosphere.
Oxidation step comprises: (1) 810 DEG C, large N
2fill silicon chip under adding little oxygen atmosphere and enter boat;
(2) large N
2950 DEG C are warming up under adding little oxygen atmosphere;
(3) be oxidized, under nitrogen oxygen atmosphere, maintain 30min at 950 DEG C and carry out the diffusion of residual phosphorus source and oxidation, the residual phosphorus source in boiler tube and on quartz boat is made to deposit to silicon chip surface, phosphorus atoms diffuses into inside silicon chip and forms N+ doped region, simultaneously because the thin silicon oxide layer that grow one deck 15nm at silicon chip surface is understood in the existence of oxygen;
(4) large N
2under atmosphere, temperature is reduced to 810 DEG C, N
2boat is gone out in atmosphere.
The front-surface field surface concentration formed is at 1E18cm
-3, junction depth is at 0.2 μm.The front-surface field formed after the passivation of covering SiNx film, the J on matte
0be low to moderate 5fA/cm
2-10fA/cm
2.The IBC battery of application gained ultra low surface concentration front-surface field, the internal quantum efficiency of its short-wave band is up to more than 95%.
In the formation method of all back-contact electrodes solar cell ultra low surface concentration front-surface field of the present invention, the change of parameter does not affect the preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, therefore in formation method of the present invention, the combination of arbitrary parameter all can realize the preparation of all back-contact electrodes solar cell ultra low surface concentration front-surface field, obtains surface concentration at 3E17cm
-3-1E18cm
-3, junction depth is the front-surface field of 0.1 μm-0.2 μm.Do not repeat them here.
Claims (6)
1. a formation method for all back-contact electrodes solar cell ultra low surface concentration front-surface field, is characterized in that, comprise a step blank pipe run saturation process and immediately a step blank pipe run the oxidation step after saturation process;
A described step blank pipe runs saturation process and comprises: enter boat at 800 DEG C-810 DEG C in nitrogen and oxygen atmosphere hollow boat, again 800 DEG C-950 DEG C in oxygen, nitrogen and carry phosphorus source nitrogen atmosphere in carry out phosphorus source deposition, then in nitrogen atmosphere, go out boat in 800 DEG C-810 DEG C;
Described oxidation step comprises: in nitrogen and oxygen atmosphere, fill silicon chip at 800 DEG C-810 DEG C and enter boat, then in oxygen and nitrogen atmosphere, carry out the diffusion of residual phosphorus source and oxidation at 800 DEG C-950 DEG C, then in nitrogen atmosphere, go out boat in 800 DEG C-810 DEG C.
2. formation method according to claim 1, is characterized in that, a described step blank pipe runs phosphorus source deposition process in saturation process, and the nitrogen flow wherein carrying phosphorus source is 200sccm-1000sccm, and oxygen flow is 100sccm-500sccm.
3. formation method according to claim 1, is characterized in that, the time that a described step blank pipe runs phosphorus source deposition in saturation process is 10min-30min.
4. formation method according to claim 1, is characterized in that, a described step blank pipe runs saturation process hollow boat and enters boat process, and wherein the flow of nitrogen is much larger than the flow of oxygen.
5. formation method according to claim 1, is characterized in that, in described oxidation step, the time of the diffusion of residual phosphorus source and oxidation is 10min-50min.
6. formation method according to claim 1, is characterized in that, fills silicon chip and enter boat process in described oxidation step, and wherein the flow of nitrogen is much larger than the flow of oxygen.
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|---|---|---|---|
| CN201610050192.6A CN105514219B (en) | 2016-01-26 | 2016-01-26 | The forming method of all back-contact electrodes solar cell ultra low surface concentration front-surface field |
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|---|---|---|---|
| CN201610050192.6A CN105514219B (en) | 2016-01-26 | 2016-01-26 | The forming method of all back-contact electrodes solar cell ultra low surface concentration front-surface field |
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| CN105514219B CN105514219B (en) | 2017-03-01 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090227061A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Establishing a high phosphorus concentration in solar cells |
| KR20120003612A (en) * | 2010-07-05 | 2012-01-11 | 현대중공업 주식회사 | Method for fabricating back contact solar cell |
| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
-
2016
- 2016-01-26 CN CN201610050192.6A patent/CN105514219B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090227061A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Establishing a high phosphorus concentration in solar cells |
| KR20120003612A (en) * | 2010-07-05 | 2012-01-11 | 현대중공업 주식회사 | Method for fabricating back contact solar cell |
| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |