CN112002669A - Method for solving back reverse osmosis of silicon wafer single-side diffusion - Google Patents
Method for solving back reverse osmosis of silicon wafer single-side diffusion Download PDFInfo
- Publication number
- CN112002669A CN112002669A CN202010913298.0A CN202010913298A CN112002669A CN 112002669 A CN112002669 A CN 112002669A CN 202010913298 A CN202010913298 A CN 202010913298A CN 112002669 A CN112002669 A CN 112002669A
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- Prior art keywords
- silicon wafer
- diffusion
- solving
- alumina powder
- reverse osmosis
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 44
- 239000010703 silicon Substances 0.000 title claims abstract description 44
- 238000009792 diffusion process Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000001223 reverse osmosis Methods 0.000 title claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000000853 adhesive Substances 0.000 claims abstract description 7
- 230000001070 adhesive effect Effects 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 4
- 230000001376 precipitating effect Effects 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims abstract description 4
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 3
- 239000003522 acrylic cement Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000012528 membrane Substances 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 5
- 238000007664 blowing Methods 0.000 abstract description 3
- 239000004576 sand Substances 0.000 abstract description 3
- 238000000227 grinding Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Abstract
The invention discloses a method for solving the back reverse osmosis of single-side diffusion of a silicon wafer, which mainly relates to the technical field of silicon wafer production and manufacture, and comprises a silicon wafer, a diffusion source tightly attached to the diffusion surface of the silicon wafer, and an isolating membrane tightly attached to the protection surface of the silicon wafer, wherein the isolating membrane is a membrane-shaped object prepared by spraying, precipitating and drying slurry mixed by activated alumina powder and an adhesive, the activated alumina powder in the isolating membrane absorbs reverse atmosphere, the problem that the back simultaneously diffuses the same substances is solved, and the back can be removed with less or no sand blowing or grinding after diffusion.
Description
Technical Field
The invention mainly relates to the technical field of silicon wafer production and manufacturing, in particular to a method for solving back reverse osmosis during single-side diffusion of a silicon wafer.
Background
The diffusion motion is a statistical result of the thermal motion of microscopic particle atoms or molecules. At a certain temperature, impurity atoms have certain energy and can overcome certain resistance to enter a semiconductor and perform slow migration movement in the semiconductor. The silicon wafer diffusion process is to place the silicon wafer into a high-temperature diffusion furnace, introduce nitrogen and other gases, decompose the silicon wafer at high temperature and form a P-N junction on the surface of the silicon wafer.
The silicon wafer diffusion process generally needs two surfaces to be subjected to necessary design and diffusion, but in actual production, one process is needed, the other surface simultaneously has diffusion of the same type of source due to the problems of decomposition, volatilization, diffusion vapor pressure and the like of a diffusion source in a high-temperature process, the back surface needs to be ground or removed by sand blowing and the like after the problem is formed, the reverse osmosis problem is relieved or solved by coating a protective film on the back surface in the industry, but the processes need to be added, so that the operation cost is greatly increased.
Disclosure of Invention
In view of the defects and shortcomings in the prior art, the invention aims to provide a method for solving the back side reverse osmosis of silicon wafer single-side diffusion, and solve the problem that the back side of the silicon wafer is simultaneously diffused due to the formation of a liquid or gaseous reverse osmosis substance in the single-side diffusion.
In order to solve the technical problems, the invention adopts the following technical scheme: the method for solving the problem of back reverse osmosis of single-side diffusion of the silicon wafer comprises the silicon wafer, a diffusion source attached to the diffusion surface of the silicon wafer and an isolation film attached to the protection surface of the silicon wafer, wherein the isolation film is a film-shaped object prepared by spraying, precipitating and drying slurry mixed by activated alumina powder and an adhesive, and the activated alumina powder in the isolation film absorbs reverse atmosphere.
As a further improvement of the invention, the binder is an acrylic binder.
As a further improvement of the invention, the size of the isolating film is completely the same as that of the silicon wafer or is 0.5-3 mm larger than that of the silicon wafer.
As a further improvement of the invention, the particle size of the activated alumina powder is 200-2000 nm.
Compared with the prior art, the invention has the beneficial effects that: according to the requirements of actual production, when the silicon wafer protective film is used, the isolating film is attached to the surface of the silicon wafer to be protected and tightly adhered or extruded, and in the processes of heating and high temperature, the active alumina powder in the isolating film absorbs the reverse atmosphere, so that the problem that the back surface of the silicon wafer is simultaneously diffused due to the liquid or gaseous reverse osmosis substances in the processes of single-side diffusion such as phosphorus diffusion and boron diffusion is solved.
Drawings
The invention will be further described with reference to the following drawings and detailed description:
FIG. 1 is a schematic diagram of an embodiment of the present invention;
in the figure: 1 diffusion source, 2 silicon chip and 3 isolation film.
Detailed Description
In order to make the technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following specific embodiments.
FIG. 1 is a schematic diagram of an embodiment of the present invention; the silicon wafer diffusion device comprises a silicon wafer (2), a diffusion source (1) attached to the diffusion surface of the silicon wafer (2) and an isolation film (3) attached to the protection surface of the silicon wafer (2), wherein the size of the isolation film (3) is completely the same as that of the silicon wafer or is 0.5-3 mm larger than that of the silicon wafer.
The isolating membrane (3) is a membrane-shaped object prepared by spraying, precipitating and drying slurry mixed by activated alumina powder and an adhesive, when the isolating membrane is used according to the requirement of actual production, the isolating membrane (3) is attached to the surface of the silicon wafer (2) to be protected and then is tightly pressed or squeezed, in the process of temperature rise and high temperature, the activated alumina powder in the isolating membrane (3) absorbs the reverse atmosphere, and the problem that the back surface of the silicon wafer is simultaneously diffused due to liquid or gaseous reverse osmosis substances in the processes of single-side diffusion such as phosphorus diffusion and boron diffusion is solved.
The active alumina is stable oxide of aluminum, is white spherical porous particles, can be ionized into ionic crystals at high temperature, has strong adsorption performance, does not expand or crack, and keeps the original shape. The particle size of the active alumina powder is 200-2000 nm, and the adhesive is acrylic resin adhesive.
The alumina in the isolating film (3) can absorb the reverse atmosphere, so that the problem that the same substances are diffused on the back surface at the same time is solved, and the back surface is reduced or removed without sand blowing or grinding after diffusion.
It should be understood that the detailed description and specific examples, while indicating the invention, are given by way of illustration only, since various other embodiments will become apparent to those skilled in the art upon reference to the following detailed description.
Claims (4)
1. The method for solving the back reverse osmosis of the single-side diffusion of the silicon wafer comprises a silicon wafer (2) and a diffusion source (1) attached to the diffusion surface of the silicon wafer (2), and is characterized in that: the silicon wafer protective film also comprises an isolating film (3) which is attached to the protected surface of the silicon wafer (2), wherein the isolating film (3) is a film-shaped object which is prepared by spraying, precipitating and drying slurry mixed by alumina powder and an adhesive, and the alumina powder in the isolating film (3) absorbs an inverse atmosphere.
2. The method for solving the back side reverse diffusion problem of the silicon wafer single side diffusion according to claim 1, characterized in that: the adhesive is an acrylic adhesive.
3. The method for solving the back side reverse diffusion problem of the silicon wafer single side diffusion according to claim 1, characterized in that: the size of the isolation film (3) is completely the same as that of the silicon wafer or is 0.5-3 mm larger than that of the silicon wafer.
4. The method for solving the back side reverse diffusion problem of the silicon wafer single side diffusion according to claim 1, characterized in that: the particle size of the alumina powder is 200-2000 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010913298.0A CN112002669A (en) | 2020-09-03 | 2020-09-03 | Method for solving back reverse osmosis of silicon wafer single-side diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010913298.0A CN112002669A (en) | 2020-09-03 | 2020-09-03 | Method for solving back reverse osmosis of silicon wafer single-side diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112002669A true CN112002669A (en) | 2020-11-27 |
Family
ID=73465591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010913298.0A Pending CN112002669A (en) | 2020-09-03 | 2020-09-03 | Method for solving back reverse osmosis of silicon wafer single-side diffusion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112002669A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114944434A (en) * | 2022-05-25 | 2022-08-26 | 三一集团有限公司 | Crystalline silicon solar cell, preparation method thereof and photovoltaic module |
Citations (6)
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|---|---|---|---|---|
| CN102623563A (en) * | 2012-03-30 | 2012-08-01 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method for double-face illuminated crystalline silicon solar cell |
| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
| JP2017014039A (en) * | 2015-06-30 | 2017-01-19 | 旭硝子株式会社 | Glass substrate for solar battery and cigs solar battery |
| CN107068561A (en) * | 2017-03-27 | 2017-08-18 | 扬州虹扬科技发展有限公司 | A kind of preparation method of ultralow forward voltage rectifier chip |
| CN108550632A (en) * | 2018-04-25 | 2018-09-18 | 协鑫集成科技股份有限公司 | The preparation method and battery of N-type double-side cell |
| CN110085699A (en) * | 2019-04-22 | 2019-08-02 | 通威太阳能（成都）有限公司 | A kind of p-type high-efficiency battery and preparation method thereof with passivation contact structures |
-
2020
- 2020-09-03 CN CN202010913298.0A patent/CN112002669A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623563A (en) * | 2012-03-30 | 2012-08-01 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method for double-face illuminated crystalline silicon solar cell |
| CN103337561A (en) * | 2013-07-12 | 2013-10-02 | 苏州润阳光伏科技有限公司 | Fabrication method of surface fields of full-back-contact solar cell |
| JP2017014039A (en) * | 2015-06-30 | 2017-01-19 | 旭硝子株式会社 | Glass substrate for solar battery and cigs solar battery |
| CN107068561A (en) * | 2017-03-27 | 2017-08-18 | 扬州虹扬科技发展有限公司 | A kind of preparation method of ultralow forward voltage rectifier chip |
| CN108550632A (en) * | 2018-04-25 | 2018-09-18 | 协鑫集成科技股份有限公司 | The preparation method and battery of N-type double-side cell |
| CN110085699A (en) * | 2019-04-22 | 2019-08-02 | 通威太阳能（成都）有限公司 | A kind of p-type high-efficiency battery and preparation method thereof with passivation contact structures |
Non-Patent Citations (1)
| Title |
|---|
| 北京能源学会: "《实用新产品开发技术汇编 3 化工·材料》", 31 December 1985 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114944434A (en) * | 2022-05-25 | 2022-08-26 | 三一集团有限公司 | Crystalline silicon solar cell, preparation method thereof and photovoltaic module |
| CN114944434B (en) * | 2022-05-25 | 2024-03-08 | 三一硅能(株洲)有限公司 | Crystalline silicon solar cell, preparation method thereof and photovoltaic module |
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Application publication date: 20201127 |
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