CN102709385A - Production method for full back electrode solar cells - Google Patents
Production method for full back electrode solar cells Download PDFInfo
- Publication number
- CN102709385A CN102709385A CN2012101416335A CN201210141633A CN102709385A CN 102709385 A CN102709385 A CN 102709385A CN 2012101416335 A CN2012101416335 A CN 2012101416335A CN 201210141633 A CN201210141633 A CN 201210141633A CN 102709385 A CN102709385 A CN 102709385A
- Authority
- CN
- China
- Prior art keywords
- production method
- mask layer
- back electrode
- layer
- electrode solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a production method for full back electrode solar cells. The production method includes the steps: 1, performing single-surface boron diffusion to form a P+ layer on the back of an N-type silicon wafer; 2, depositing a texturing mask layer on the P+ layer; 3, performing single-surface texturing; 4, preparing a front surface field on the illuminated surface of the silicon wafer by phosphorus diffusion; 5, removing the texturing mask layer and PSG (phosphosilicate glass); 6, preparing an SiO2 mask layer by thermal oxide growth; 7, slotting in the area of a back surface field on the back of the silicon wafer, wherein the depth of each slot is not less than the junction depth of a P-N plus the depth of the back surface field together; 8, printing a phosphorous doping agent with the height less than the slot depth H minus the P-N junction depth at the bottom of the slotting area; 9, forming N+ layers at the bottom of the slots by the aid of high-temperature diffusion; 10, removing PSG and the SiO2 mask layer; 11, preparing a passive film on each of the front and the back; 12, performing screen printing for metal electrodes; and 13, sintering. The production method for the full back electrode solar cells has the advantages that cell efficiency is improved greatly while production cost is reduced by the aid of height difference of a P+ area and an N- area, namely a matrix N area, and suitability for large-scale production is achieved.
Description
Technical field
The present invention relates to a kind of production method of full back electrode solar cell.
Background technology
The full back electrode battery that U.S. SunPower company releases adopts N type silicon chip, and electrode is all designed at cell backside; To promote the extinction area of battery front side to greatest extent; It is about 23% that the conversion efficiency of its volume production has reached, and the laboratory peak efficiency reaches 24.2%, but the battery preparation technique complicated steps of SunPower; Cost is high, becomes the bottleneck that scale of mass production is promoted always.
Summary of the invention
Technical problem to be solved by this invention is: a kind of production method of full back electrode solar cell is provided, simplifies processing step, reduce production costs.
The technical solution adopted for the present invention to solve the technical problems is: a kind of production method of full back electrode solar cell has following steps:
1. single face boron diffusion forms the P+ layer at the N type silicon chip back side;
2. deposition making herbs into wool mask layer on overleaf the P+ layer;
3. single face making herbs into wool;
4. phosphorous diffusion prepares front-surface field at the silicon chip sensitive surface;
5. remove making herbs into wool mask layer and PSG;
6. thermal oxide growth SiO2 mask layer;
7. slot in the back surface field zone at the silicon chip back side, groove depth H is greater than the degree of depth that equals P-N knot junction depth+back surface field;
8. printing height deducts the phosphorous dopant of P-N junction depth less than groove depth H in slot area bottom;
9. High temperature diffusion forms the N+ layer at trench bottom;
10. remove PSG and SiO2 mask layer;
11. positive and negative is made passivating film;
12. screen-printed metal electrode;
13. sintering.
Further limit, in the step 1, through two face-to-face silicon chips are stacked together, realize the single face boron diffusion, square resistance is 10-100ohm/Sq.
Further limit, in the step 2, the making herbs into wool mask layer is SiNx or SiO2, and the making herbs into wool mask layer thickness is 20-300nm.
Further limit, in the step 4, phosphorous diffusion prepares front-surface field at the silicon chip sensitive surface, and square resistance is 30-200ohm/Sq.
Further limit, in the step 6, thermal oxide growth SiO2 mask layer, thickness are 30-300nm, simultaneously P+ laminar surface concentration are further reduced, and junction depth further deepens.
Further limit, in the step 7, slotted in the back surface field zone, and carry out etching, form groove depth H with etching liquid cross-notching zone with laser.
Further limit, in the step 7, carry out etching with KOH etching liquid cross-notching zone.
Further limit, in the step 8, in etch areas bottom silk screen printing or inkjet printing printed dopant.
The invention has the beneficial effects as follows: utilize the difference in height in P+ and N+ zone to form the matrix n-quadrant, promoted battery efficiency greatly and reduced production cost, be fit to large-scale production.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the structural representation of step 1 of the present invention;
Fig. 2 is the structural representation of step 2 of the present invention;
Fig. 3 is the structural representation of step 3 of the present invention;
Fig. 4 is the structural representation of step 4 of the present invention;
Fig. 5 is the structural representation of step 5 of the present invention;
Fig. 6 is the structural representation of step 6 of the present invention;
Fig. 7 is the structural representation of step 7 of the present invention;
Fig. 8 is the structural representation of step 8 of the present invention;
Fig. 9 is the structural representation of step 9 of the present invention;
Figure 10 is the structural representation of step 10 of the present invention;
Figure 11 is the structural representation of step 11 of the present invention;
Figure 12 is the structural representation of step 12 of the present invention;
Figure 13 is the structural representation of step 13 of the present invention;
Figure 14 is the structural representation of step 14 of the present invention;
Among the figure, 1. silicon chip, 2.P+ layer, 3. making herbs into wool mask layer, 4. front-surface field, 5.SiO2 mask layer, 6.N+ layer, 7. passivating film, 8. metal electrode, 9. dopant.
Embodiment
Shown in Fig. 1 to 14, a kind of production method of full back electrode solar cell has following steps:
1. silicon chip 1 polishing, corrosion thickness is 2-10um;
2. silicon chip 1 carries out the single face boron diffusion face-to-face, is formed for constituting the P+ layer 2 of P-N knot at silicon chip 1 back side, and square resistance is 10-100ohm/Sq;
3. deposition SiNx or SiO2 or other making herbs into wool mask layers 3 on overleaf the P+ layer 2, making herbs into wool mask layer 3 thickness are 20-300nm, can stop the corrosion of next step Woolen-making liquid to P+ layer 2, can not destroy the P-N knot;
4. single face making herbs into wool, making herbs into wool corrosion layer thickness is 2-15um;
5. phosphorous diffusion prepares front-surface field 4, and square resistance is 30-200ohm/Sq;
6. remove SiNx or SiO2 or other making herbs into wool mask layers 3 and PSG (silicon phosphorus glass);
7. thermal oxide growth SiO2 mask layer 5, thickness is 30-300nm, simultaneously P+ layer 2 surface concentration is further reduced, junction depth further deepens;
8. with laser slotted in the back surface field zone;
9. carry out etching with KOH or other etching mode cross-notching zones, etching depth is greater than the degree of depth that equals P-N knot junction depth+back surface field, preferred 4um at least, and this difference in height is the matrix n-quadrant between P+ and N+ just;
10. silk screen printing or inkjet printing or other mode printing height deduct the phosphorous dopant 9 of P-N junction depth less than the etching groove depth in the etching groove; When next step High temperature diffusion, just only form phosphorus-diffused layer in the bottom of groove; Cell wall partly is still matrix; Be equivalent to the matrix n-quadrant between P+ and the N+, can avoid repeatedly the growing mask layer to form the matrix n-quadrant between P+ and the N+ district like this, reduce cost greatly;
11. High temperature diffusion forms n+ layer 6 in the etching groove;
12. remove PSG and SiO2 mask layer 5;
13. positive and negative deposition or thermal oxide growth passivating film 7, the passivating film 7 at the back side is Al
2O
3And SiN
XBuild up passivating film;
14. screen-printed metal electrode 8 and sintering.
Claims (8)
1. the production method of a full back electrode solar cell is characterized in that: have following steps:
1. single face boron diffusion forms P+ layer (2) at N type silicon chip (1) back side;
2. overleaf P+ layer (2) is gone up deposition making herbs into wool mask layer (3);
3. single face making herbs into wool;
4. phosphorous diffusion prepares front-surface field (4) at silicon chip (1) sensitive surface;
5. remove making herbs into wool mask layer (3) and PSG;
6. thermal oxide growth SiO2 mask layer (5);
7. slot in the back surface field zone at silicon chip (1) back side, groove depth H is greater than the degree of depth that equals P-N knot junction depth+back surface field;
8. printing height deducts the phosphorous dopant (9) of P-N junction depth less than groove depth H in slot area bottom;
9. High temperature diffusion forms N+ layer (6) at trench bottom;
10. remove PSG and SiO2 mask layer (5);
11. positive and negative is made passivating film (7);
12. screen-printed metal electrode (8);
13. sintering.
2. the production method of full back electrode solar cell according to claim 1 is characterized in that: in the step 1, through two face-to-face silicon chips (1) are stacked together, realize the single face boron diffusion, square resistance is 10-100ohm/Sq.
3. the production method of full back electrode solar cell according to claim 1 is characterized in that: in the step 2, making herbs into wool mask layer (3) is SiNx or SiO2, and making herbs into wool mask layer (3) thickness is 20-300nm.
4. the production method of full back electrode solar cell according to claim 1 is characterized in that: in the step 4, phosphorous diffusion prepares front-surface field (4) at silicon chip (1) sensitive surface, and square resistance is 30-200ohm/Sq.
5. the production method of full back electrode solar cell according to claim 1 is characterized in that: in the step 6, thermal oxide growth SiO2 mask layer (5), thickness are 30-300nm, simultaneously P+ layer (2) surface concentration are further reduced, and junction depth further deepens.
6. the production method of full back electrode solar cell according to claim 1 is characterized in that: in the step 7, with laser slotted in the back surface field zone, and carry out etching with etching liquid cross-notching zone, form groove depth H.
7. the production method of full back electrode solar cell according to claim 6 is characterized in that: in the step 7, carry out etching with KOH etching liquid cross-notching zone.
8. the production method of full back electrode solar cell according to claim 1 is characterized in that: in the step 8, in etch areas bottom silk screen printing or inkjet printing printed dopant (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210141633.5A CN102709385B (en) | 2012-05-08 | 2012-05-08 | Production method for full back electrode solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210141633.5A CN102709385B (en) | 2012-05-08 | 2012-05-08 | Production method for full back electrode solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102709385A true CN102709385A (en) | 2012-10-03 |
| CN102709385B CN102709385B (en) | 2015-03-11 |
Family
ID=46902029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210141633.5A Active CN102709385B (en) | 2012-05-08 | 2012-05-08 | Production method for full back electrode solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102709385B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618025A (en) * | 2013-11-06 | 2014-03-05 | 电子科技大学 | Crystalline silicon back junction solar cell preparation method |
| CN103985780A (en) * | 2013-02-08 | 2014-08-13 | 上海凯世通半导体有限公司 | Manufacturing method of solar energy battery |
| CN104465798A (en) * | 2013-09-24 | 2015-03-25 | 李岱殷 | Solar cell structure and forming method thereof |
| CN104485390A (en) * | 2014-12-24 | 2015-04-01 | 常州天合光能有限公司 | Production method of all back-contact solar cell |
| CN105097987A (en) * | 2014-05-16 | 2015-11-25 | 上海凯世通半导体有限公司 | Back-contact cell and manufacturing method thereof, and solar cell module |
| CN105185858A (en) * | 2015-08-06 | 2015-12-23 | 黄河水电光伏产业技术有限公司 | Back contact type solar cell based on P-type silicon substrate and manufacturing method thereof |
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
| CN109103298A (en) * | 2018-08-21 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of the IBC solar battery based on self-registered technology |
| CN111864008A (en) * | 2019-04-15 | 2020-10-30 | 江苏顺风光电科技有限公司 | Preparation method of P-type heterojunction full back electrode contact crystalline silicon photovoltaic cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
| CN202134564U (en) * | 2011-06-07 | 2012-02-01 | 合肥海润光伏科技有限公司 | Novel N-type silicon heterojunction battery with IBC structure |
-
2012
- 2012-05-08 CN CN201210141633.5A patent/CN102709385B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
| CN202134564U (en) * | 2011-06-07 | 2012-02-01 | 合肥海润光伏科技有限公司 | Novel N-type silicon heterojunction battery with IBC structure |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985780B (en) * | 2013-02-08 | 2016-08-31 | 上海凯世通半导体股份有限公司 | The manufacture method of solaode |
| CN103985780A (en) * | 2013-02-08 | 2014-08-13 | 上海凯世通半导体有限公司 | Manufacturing method of solar energy battery |
| CN104465798A (en) * | 2013-09-24 | 2015-03-25 | 李岱殷 | Solar cell structure and forming method thereof |
| CN103618025A (en) * | 2013-11-06 | 2014-03-05 | 电子科技大学 | Crystalline silicon back junction solar cell preparation method |
| CN103618025B (en) * | 2013-11-06 | 2016-08-17 | 电子科技大学 | A kind of crystalline silicon back junction solar battery preparation method |
| CN105097987A (en) * | 2014-05-16 | 2015-11-25 | 上海凯世通半导体有限公司 | Back-contact cell and manufacturing method thereof, and solar cell module |
| CN105097987B (en) * | 2014-05-16 | 2018-08-24 | 上海凯世通半导体股份有限公司 | Back contact battery and preparation method thereof and solar cell module |
| CN104485390A (en) * | 2014-12-24 | 2015-04-01 | 常州天合光能有限公司 | Production method of all back-contact solar cell |
| CN105185858A (en) * | 2015-08-06 | 2015-12-23 | 黄河水电光伏产业技术有限公司 | Back contact type solar cell based on P-type silicon substrate and manufacturing method thereof |
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
| CN106252449B (en) * | 2016-08-26 | 2017-09-26 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and component, system |
| CN109103298A (en) * | 2018-08-21 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of the IBC solar battery based on self-registered technology |
| CN111864008A (en) * | 2019-04-15 | 2020-10-30 | 江苏顺风光电科技有限公司 | Preparation method of P-type heterojunction full back electrode contact crystalline silicon photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102709385B (en) | 2015-03-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102709385B (en) | Production method for full back electrode solar cells | |
| CN106449800B (en) | Passivation contact structures of selective polysilicon membrane and preparation method thereof | |
| CN103904164B (en) | Preparation method for N-shaped back-junction solar cell | |
| CN201699033U (en) | Two-sided illuminated crystalline silicon solar battery | |
| CN102246324B (en) | Deep trench back contacts photovoltaic solar cell | |
| CN102169923A (en) | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure | |
| CN100461462C (en) | N-type underlay single-side extraction electrode crystal silicon cell and its making method | |
| CN201966219U (en) | N type silicon solar cell | |
| CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
| CN102487091B (en) | Novel back contact solar cell and method for manufacturing the same | |
| CN105826411A (en) | Mono-crystalline silicon double-sided solar cell and preparation method thereof | |
| CN105097978A (en) | N-type back junction crystalline silicon cell and preparation method thereof | |
| CN110265497A (en) | A kind of N-shaped crystal-silicon solar cell of selective emitter and preparation method thereof | |
| CN102339902A (en) | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery | |
| CN102315284A (en) | Cell structure capable of realizing simultaneous passivation of P-type and N-type doped layers by using laminated film and method thereof | |
| CN103035770A (en) | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof | |
| CN108767022A (en) | P-type crystal silicon solar cell and preparation method, photovoltaic module | |
| CN110459638A (en) | A kind of IBC battery and preparation method thereof of Topcon passivation | |
| CN107946408A (en) | A kind of preparation method of IBC solar cells | |
| CN102176474B (en) | N-type solar battery prepared by film masking process of one multi-purpose film and preparation method of N-type solar battery | |
| CN106784152A (en) | A kind of preparation method of IBC batteries | |
| CN202585429U (en) | Back point contact silicon solar cell | |
| CN102956719A (en) | Selectivity emitting electrode solar battery prepared by using silicon micro nanometer structure | |
| CN104465885A (en) | Production method for achieving local metallization of all-back-contact electrode solar cell | |
| CN102097527A (en) | Method for preparing N-type solar cells through masked diffusion |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |