CN102709385B - Production method for full back electrode solar cells - Google Patents
Production method for full back electrode solar cells Download PDFInfo
- Publication number
- CN102709385B CN102709385B CN201210141633.5A CN201210141633A CN102709385B CN 102709385 B CN102709385 B CN 102709385B CN 201210141633 A CN201210141633 A CN 201210141633A CN 102709385 B CN102709385 B CN 102709385B
- Authority
- CN
- China
- Prior art keywords
- production method
- mask layer
- layer
- depth
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a production method for full back electrode solar cells. The production method includes the steps: 1, performing single-surface boron diffusion to form a P+ layer on the back of an N-type silicon wafer; 2, depositing a texturing mask layer on the P+ layer; 3, performing single-surface texturing; 4, preparing a front surface field on the illuminated surface of the silicon wafer by phosphorus diffusion; 5, removing the texturing mask layer and PSG (phosphosilicate glass); 6, preparing an SiO2 mask layer by thermal oxide growth; 7, slotting in the area of a back surface field on the back of the silicon wafer, wherein the depth of each slot is not less than the junction depth of a P-N plus the depth of the back surface field together; 8, printing a phosphorous doping agent with the height less than the slot depth H minus the P-N junction depth at the bottom of the slotting area; 9, forming N+ layers at the bottom of the slots by the aid of high-temperature diffusion; 10, removing PSG and the SiO2 mask layer; 11, preparing a passive film on each of the front and the back; 12, performing screen printing for metal electrodes; and 13, sintering. The production method for the full back electrode solar cells has the advantages that cell efficiency is improved greatly while production cost is reduced by the aid of height difference of a P+ area and an N- area, namely a matrix N area, and suitability for large-scale production is achieved.
Description
Technical field
The present invention relates to a kind of production method of all back-contact electrodes solar cell.
Background technology
The full back electrode cell that SunPower company of the U.S. releases, adopt N-type silicon chip, electrode is all designed at cell backside, to promote the extinction area of battery front side to greatest extent, the conversion efficiency of its volume production has reached about 23%, and laboratory peak efficiency reaches 24.2%, but the battery preparation technique step of SunPower is complicated, cost is high, becomes the bottleneck that scale of mass production is promoted always.
Summary of the invention
Technical problem to be solved by this invention is: the production method providing a kind of all back-contact electrodes solar cell, Simplified flowsheet step, reduces production cost.
The technical solution adopted for the present invention to solve the technical problems is: a kind of production method of all back-contact electrodes solar cell, has following steps:
1. one side boron diffusion, forms P+ layer at the N-type silicon chip back side;
2. P+ layer overleaf deposits making herbs into wool mask layer;
3. one texture-etching side;
4. phosphorus is diffused in silicon chip sensitive surface and prepares front-surface field;
5. remove making herbs into wool mask layer and PSG;
6. thermal oxide growth SiO2 mask layer;
7. slot in the back surface field region of silicon chip back side, groove depth H is greater than the degree of depth equaling P-N junction junction depth+back surface field;
8. bottom slot area, printing height is less than groove depth H and deducts the dark phosphorous dopant of P-N junction;
9. High temperature diffusion, forms N+ layer at trench bottom;
10. remove PSG and SiO2 mask layer;
11. positive and negatives make passivating film;
12. screen-printed metal electrodes;
13. sintering.
Further restriction, in step 1, by being stacked together by face-to-face for two panels silicon chip, realize the diffusion of one side boron, square resistance is 10-100ohm/Sq.
Further restriction, in step 2, making herbs into wool mask layer is SiNx or SiO2, and making herbs into wool mask layer thickness is 20-300nm.
Further restriction, in step 4, phosphorus is diffused in silicon chip sensitive surface and prepares front-surface field, and square resistance is 30-200ohm/Sq.
Further restriction, in step 6, thermal oxide growth SiO2 mask layer, thickness is 30-300nm, and P+ layer surface concentration reduced further, junction depth deepens further simultaneously.
Further restriction, in step 7, slots to back surface field region with laser, and etches with etching liquid cross-notching region, forms groove depth H.
Further restriction, in step 7, etches with KOH etching liquid cross-notching region.
Further restriction, in step 8, in the printing of etch areas bottom web or inkjet printing printed dopant.
The invention has the beneficial effects as follows: utilize the difference in height in P+ and N+ region to form matrix n-quadrant, greatly improve battery efficiency and reduce production cost, being applicable to large-scale production.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 is the structural representation of step 1 of the present invention;
Fig. 2 is the structural representation of step 2 of the present invention;
Fig. 3 is the structural representation of step 3 of the present invention;
Fig. 4 is the structural representation of step 4 of the present invention;
Fig. 5 is the structural representation of step 5 of the present invention;
Fig. 6 is the structural representation of step 6 of the present invention;
Fig. 7 is the structural representation of step 7 of the present invention;
Fig. 8 is the structural representation of step 8 of the present invention;
Fig. 9 is the structural representation of step 9 of the present invention;
Figure 10 is the structural representation of step 10 of the present invention;
Figure 11 is the structural representation of step 11 of the present invention;
Figure 12 is the structural representation of step 12 of the present invention;
Figure 13 is the structural representation of step 13 of the present invention;
Figure 14 is the structural representation of step 14 of the present invention;
In figure, 1. silicon chip, 2.P+ layer, 3. making herbs into wool mask layer, 4. front-surface field, 5.SiO2 mask layer, 6.N+ layer, 7. passivating film, 8. metal electrode, 9. dopant.
Embodiment
As shown in Fig. 1 to 14, a kind of production method of all back-contact electrodes solar cell, has following steps:
1. silicon chip 1 polishing, corrosion thickness is 2-10um;
2. silicon chip 1 carries out the diffusion of one side boron face-to-face, and form the P+ layer 2 for forming P-N junction at silicon chip 1 back side, square resistance is 10-100ohm/Sq;
3. P+ layer 2 overleaf deposits SiNx or SiO2 or other making herbs into wool mask layers 3, making herbs into wool mask layer 3 thickness is 20-300nm, can stop the corrosion of next step Woolen-making liquid to P+ layer 2, can not destroy P-N junction;
4. one texture-etching side, making herbs into wool corrosion layer thickness is 2-15um;
5. phosphorus diffusion is for front-surface field 4, and square resistance is 30-200ohm/Sq;
6. remove SiNx or SiO2 or other making herbs into wool mask layers 3 and PSG(silicon phosphorus glass);
7. thermal oxide growth SiO2 mask layer 5, thickness is 30-300nm, and P+ layer 2 surface concentration reduced further, junction depth deepens further simultaneously;
8. with laser, slotted in back surface field region;
9. etch with KOH or other etching mode cross-notching regions, etching depth is greater than the degree of depth equaling P-N junction junction depth+back surface field, preferably at least 4um, the matrix n-quadrant of this difference in height namely between P+ and N+;
10. in etching groove, silk screen printing or inkjet printing or other mode printing height are less than etching groove depth and deduct the dark phosphorous dopant 9 of P-N junction, just only phosphorus-diffused layer is formed in the bottom of groove when next step High temperature diffusion, cell wall part is still matrix, be equivalent to the matrix n-quadrant between P+ and N+, can avoid so repeatedly growing the matrix n-quadrant between mask layer formation P+ and N+ district, greatly reduce costs;
11. High temperature diffusion, form n+ layer 6 in etching groove;
12. remove PSG and SiO2 mask layer 5;
13. positive and negative deposition or thermal oxide growth passivating films 7, the passivating film 7 at the back side is Al
2o
3and SiN
xbuild up passivating film;
14. screen-printed metal electrodes 8 also sinter.
Claims (7)
1. a production method for all back-contact electrodes solar cell, is characterized in that: have following steps:
1. one side boron diffusion, forms P+ layer (2) at N-type silicon chip (1) back side;
2. P+ layer (2) overleaf upper deposition making herbs into wool mask layer (3);
3. one texture-etching side;
4. phosphorus is diffused in silicon chip (1) sensitive surface and prepares front-surface field (4);
5. remove making herbs into wool mask layer (3) and PSG;
6. thermal oxide growth SiO
2mask layer (5);
7. slot in the back surface field region at silicon chip (1) back side, groove depth H is greater than the degree of depth equaling P-N junction junction depth+back surface field;
8. bottom slot area, printing height is less than groove depth H and deducts the dark phosphorous dopant (9) of P-N junction;
9. High temperature diffusion, forms N+ layer (6) at trench bottom;
10. remove PSG and SiO
2mask layer (5);
11. positive and negatives make passivating film (7);
12. screen-printed metal electrodes (8);
13. sintering;
In step 7, with laser, slotted in back surface field region, and etch with etching liquid cross-notching region, form groove depth H.
2. the production method of all back-contact electrodes solar cell according to claim 1, is characterized in that: in step 1, and by face-to-face for two panels silicon chip (1) being stacked together, realize the diffusion of one side boron, square resistance is 10-100ohm/Sq.
3. the production method of all back-contact electrodes solar cell according to claim 1, is characterized in that: in step 2, and making herbs into wool mask layer (3) is SiN
xor SiO
2, making herbs into wool mask layer (3) thickness is 20-300nm.
4. the production method of all back-contact electrodes solar cell according to claim 1, is characterized in that: in step 4, and phosphorus is diffused in silicon chip (1) sensitive surface and prepares front-surface field (4), and square resistance is 30-200ohm/Sq.
5. the production method of all back-contact electrodes solar cell according to claim 1, is characterized in that: in step 6, thermal oxide growth SiO
2mask layer (5), thickness is 30-300nm, and P+ layer (2) surface concentration reduced further, junction depth deepens further simultaneously.
6. the production method of all back-contact electrodes solar cell according to claim 1, is characterized in that: in step 7, etches with KOH etching liquid cross-notching region.
7. the production method of all back-contact electrodes solar cell according to claim 1, is characterized in that: in step 8, in the printing of etch areas bottom web or inkjet printing printed dopant (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210141633.5A CN102709385B (en) | 2012-05-08 | 2012-05-08 | Production method for full back electrode solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210141633.5A CN102709385B (en) | 2012-05-08 | 2012-05-08 | Production method for full back electrode solar cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102709385A CN102709385A (en) | 2012-10-03 |
| CN102709385B true CN102709385B (en) | 2015-03-11 |
Family
ID=46902029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210141633.5A Active CN102709385B (en) | 2012-05-08 | 2012-05-08 | Production method for full back electrode solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102709385B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985780B (en) * | 2013-02-08 | 2016-08-31 | 上海凯世通半导体股份有限公司 | The manufacture method of solaode |
| CN104465798A (en) * | 2013-09-24 | 2015-03-25 | 李岱殷 | Solar cell structure and forming method thereof |
| CN103618025B (en) * | 2013-11-06 | 2016-08-17 | 电子科技大学 | A kind of crystalline silicon back junction solar battery preparation method |
| CN105097987B (en) * | 2014-05-16 | 2018-08-24 | 上海凯世通半导体股份有限公司 | Back contact battery and preparation method thereof and solar cell module |
| CN104485390A (en) * | 2014-12-24 | 2015-04-01 | 常州天合光能有限公司 | Production method of all back-contact solar cell |
| CN105185858B (en) * | 2015-08-06 | 2017-07-11 | 黄河水电光伏产业技术有限公司 | Back contact solar battery based on P-type silicon substrate and preparation method thereof |
| CN106252449B (en) * | 2016-08-26 | 2017-09-26 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and component, system |
| CN109103298A (en) * | 2018-08-21 | 2018-12-28 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of the IBC solar battery based on self-registered technology |
| CN111864008A (en) * | 2019-04-15 | 2020-10-30 | 江苏顺风光电科技有限公司 | Preparation method of P-type heterojunction full back electrode contact crystalline silicon photovoltaic cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
| CN202134564U (en) * | 2011-06-07 | 2012-02-01 | 合肥海润光伏科技有限公司 | Novel N-type silicon heterojunction battery with IBC structure |
-
2012
- 2012-05-08 CN CN201210141633.5A patent/CN102709385B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7339110B1 (en) * | 2003-04-10 | 2008-03-04 | Sunpower Corporation | Solar cell and method of manufacture |
| CN101088159A (en) * | 2004-09-07 | 2007-12-12 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
| CN202134564U (en) * | 2011-06-07 | 2012-02-01 | 合肥海润光伏科技有限公司 | Novel N-type silicon heterojunction battery with IBC structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102709385A (en) | 2012-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102709385B (en) | Production method for full back electrode solar cells | |
| CN103904164B (en) | Preparation method for N-shaped back-junction solar cell | |
| CN102246324B (en) | Deep trench back contacts photovoltaic solar cell | |
| CN201699033U (en) | Two-sided illuminated crystalline silicon solar battery | |
| CN102169923A (en) | Method for passivating P-type doping layer of N-type silicon solar cell and cell structure | |
| CN201966219U (en) | N type silicon solar cell | |
| CN106340568A (en) | IBC cell manufacturing method | |
| CN110265497A (en) | A kind of N-shaped crystal-silicon solar cell of selective emitter and preparation method thereof | |
| CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
| CN105097978A (en) | N-type back junction crystalline silicon cell and preparation method thereof | |
| CN105826411A (en) | Mono-crystalline silicon double-sided solar cell and preparation method thereof | |
| CN102315284A (en) | Cell structure capable of realizing simultaneous passivation of P-type and N-type doped layers by using laminated film and method thereof | |
| CN102339902A (en) | Method for making p-type solar battery by mask diffusion method and structure of p-type solar battery | |
| CN103035770A (en) | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof | |
| CN106409989A (en) | N-type double-faced solar cell and preparation method thereof | |
| CN110459638A (en) | A kind of IBC battery and preparation method thereof of Topcon passivation | |
| CN107946408A (en) | A kind of preparation method of IBC solar cells | |
| CN102176474B (en) | N-type solar battery prepared by film masking process of one multi-purpose film and preparation method of N-type solar battery | |
| CN102097527A (en) | Method for preparing N-type solar cells through masked diffusion | |
| CN106784152A (en) | A kind of preparation method of IBC batteries | |
| CN102157613A (en) | HLF (high square resistance, low surface reflectance, fine metal contact, HLF) crystalline silicon soar cell and preparation method thereof | |
| CN104465885A (en) | Production method for achieving local metallization of all-back-contact electrode solar cell | |
| CN106129173B (en) | A kind of manufacture method of N-type double-side cell | |
| CN103022174B (en) | A kind of metal-through type emitters on back side crystal silicon solar battery based on n-type silicon chip and preparation method thereof | |
| CN102709389B (en) | Method for preparing double-faced back contact solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |