CN103035770A - Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof - Google Patents

Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof Download PDF

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Publication number
CN103035770A
CN103035770A CN2012105598455A CN201210559845A CN103035770A CN 103035770 A CN103035770 A CN 103035770A CN 2012105598455 A CN2012105598455 A CN 2012105598455A CN 201210559845 A CN201210559845 A CN 201210559845A CN 103035770 A CN103035770 A CN 103035770A
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film
layer
heavily doped
district
passivating film
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柳伟
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Changzhou Trina Solar Energy Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the technical field of an iron-binding capacity IBC solar cell, in particular to a back passivated IBC solar cell structure and a preparation method of the back passivated IBC solar cell structure. The back face of a silicon slice of the back passivated IBC solar cell is provied with an n+ heavy doping layer and a p+ heavy doping layer. The n+ heavy doping layer and the p+ heavy doping layer are provided with an n+ area passive film and a p+ area passive film. The n+ area passive film is a single-layer passive film with fixed positive charges or a multi-layer passive film, and the innermost layer of the multi-layer passive film is provided with fixed positive charges. The p+ area passive film is a single-layer passive film with fixed negative charges or a multi-layer passive film, and the innermost layer of the multi-layer passive film is provided with fixed negative charges. The preparation of the back passivated IBC solar cell structure includes that firstly, the n+ heavy doping layer and the p+ heavy doping layer are manufactured on the back face of the silicon slice, then two hollow-out film masking boards are utilized to deposit the n+ area passive layer and the p+ area passive layer on the n+ heavy doping layer and the p+ heavy doping layer. The back of the back passivated IBC solar cell respectively inducts inductive charges on the n+ heavy doping layer and the p+ heavy doping layer because of the different fixed charges on the n+ area passive film and the p+ area passive film, the inductive charges enable the surface of the back passivated IBC solar cell to form a field effect passivation, and the passivation effect of the back of the back passivated IBC solar cell is improved.

Description

IBC solar battery structure of back of the body passivation and preparation method thereof
Technical field
The present invention relates to the IBC technical field of solar batteries, particularly a kind of IBC solar battery structure of carrying on the back passivation and preparation method thereof.
Background technology
IBC (Interdigitated back contact) battery: back contacted solar cell.
PECVD (Plasma Enhanced Chemical Vapor Deposition): plasma enhanced chemical vapor deposition method.
PSG layer: silicon phosphorus glass layer.
The IBC solar cell is selected the N-type silicon substrate material usually, carries out respectively phosphorus, boron local diffusion at silicon chip back side, forms to have n+ heavily doped layer, the p+ heavily doped layer that interdigitate is arranged.As shown in Figure 1, the n+ heavily doped layer of IBC battery, p+ heavily doped layer are owing in the same side, usually adopt monofilm or stack membrane as passivation layer.
Summary of the invention
Technical problem to be solved by this invention is: a kind of IBC solar battery structure of carrying on the back passivation and preparation method thereof is provided, improves the back of the body passivation effect of IBC solar cell.
The technical solution adopted for the present invention to solve the technical problems is: a kind of IBC solar battery structure of carrying on the back passivation, comprise silicon chip, have n+ heavily doped layer, p+ heavily doped layer at the back side of silicon chip, and on n+ heavily doped layer, p+ heavily doped layer extraction electrode, have n+ district passivating film at the n+ heavily doped layer, n+ district passivating film is the lamination passivating film with the individual layer passivating film of fixed positive charge or innermost layer film strip fixed positive charge; Have p+ district passivating film at the p+ heavily doped layer, p+ district passivating film is the lamination passivating film with the individual layer passivating film of fixed negative charge or innermost layer film strip fixed negative charge.Fixed charge in the passivating film can saturated silicon face dangling bonds, reduce compound on the surface of minority carrier, thereby obtain preferably surface passivation effect.
Particularly, comprise SiN with the individual layer passivating film of fixed positive charge or the innermost layer film with fixed positive charge of lamination passivating film xFilm, SiO 2Film, TiO 2Film and a-Si:H film; Comprise Al with the individual layer passivating film of fixed negative charge or the innermost layer film with fixed negative charge of lamination passivating film 2O 3And AlF 3Film.The adhesive ability of these passivating films and silicon chip is strong, and thermal coefficient of expansion is low, compact structure, and the impermeabilisation ability is strong, and strong to the blocking capability of metal ion, quality is hard and wear-resisting, and anti-electrical breakdown capability is strong, and thermal shock resistance is good.
For improving passivation effect, preferred, n+ district passivating film is SiN xFilm, or SiO 2/ Si 3N 4Stack membrane, or SiO 2/ Al 2O 3/ Si 3N 4Stack membrane; P+ district passivating film is Al 2O 3/ Si 3N 4Stack membrane.
At the SiO as n+ district passivating film 2/ Al 2O 3/ Si 3N 4In the stack membrane, Al 2O 3Film thickness 10nm ~ 40nm, refractive index is 1.3 ~ 1.6, SiO 2The thickness of film is 10nm ~ 80nm, and refractive index is 1.5 ~ 1.8, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8nm ~ 2.3nm.
Perhaps, as the SiN of n+ district passivating film xThe thickness of film is 40nm ~ 150nm, and refractive index is 1.8 ~ 2.3.
Perhaps, at the Al as p+ district passivating film 2O 3/ Si 3N 4In the stack membrane, Al 2O 3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3-1.6, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8-2.3.
A kind of preparation method who carries on the back the IBC solar battery structure of passivation at first makes n+ heavily doped layer, p+ heavily doped layer at the back side of silicon chip; Then utilize respectively two mask plates with hollow out at n+ heavily doped layer and p+ heavily doped layer deposition n+ district's passivation layer and p+ district passivation layer.
Concrete steps are:
A) carry out the diffusion of single face boron at the back side of N-type silicon chip;
B) at boron diffusingsurface deposition one deck silicon nitride mask, the thickness of silicon nitride mask is 2500nm ~ 350nm;
C) utilize silicon nitride mask to carry out one texture-etching side;
D) silicon nitride mask of removal silicon chip surface;
E) make silicon oxide masking film on the whole surface of silicon chip, the thickness of silicon oxide masking film is 120nm ~ 180nm;
F) silicon oxide masking film of back up etching slurry selective removal n+ heavily doped region;
G) service quality percentage 20% ~ 50%KOH or NaOH solution etching n+ heavily doped region;
H) silicon chip is carried out the phosphorus diffusion, diffuse to form the n+ heavily doped layer at the n+ heavily doped region;
I) use HF to remove the PSG layer that phosphorus diffuses to form;
The mask plate that j) will have a hollow out covers on the silicon chip, and the hollow out of this mask plate is consistent with the p+ heavily doped region, sees through the hollow out deposition p+ district passivation layer of this mask plate;
K) mask plate that another piece is had a hollow out covers on the silicon chip, and the hollow out of this mask plate is consistent with the n+ heavily doped region, sees through the hollow out deposition n+ district passivation layer of this mask plate;
L) at the front of N-type silicon chip deposition antireflective film;
M) make electrode;
The sequencing of step j and step k can exchange.
The invention has the beneficial effects as follows: cell backside because of n+ district passivating film and p+ district passivating film with different fixed charges induce charge inducing at n+ heavily doped layer, p+ heavily doped layer respectively, this kind electric charge induction makes battery surface form the field effect passivation, has improved the passivation effect of cell backside.
Description of drawings
Fig. 1 is the structural representation of existing IBC solar cell;
Fig. 2 is the preparation schematic diagram of the p+ district passivating film of IBC solar cell of the present invention.
Fig. 3 is the preparation schematic diagram of the n+ district passivating film of IBC solar cell of the present invention.
Fig. 4 is the structural representation of IBC solar cell of the present invention.
Among the figure, 1.n+ heavily doped layer, 2.p+ heavily doped layer, 3.n+ district passivating film, 4.p+ district passivating film, 5. mask plate, 6. silicon chip.
Embodiment
Shown in Fig. 2,3 and 4, a kind of IBC solar battery structure of carrying on the back passivation, comprise silicon chip, have n+ heavily doped layer 1, p+ heavily doped layer 2 at the back side of silicon chip 6, and on n+ heavily doped layer 1, p+ heavily doped layer 2 extraction electrode, have n+ district passivating film 3 at n+ heavily doped layer 1, n+ district passivating film 3 is with the individual layer passivating film of fixed positive charge or the lamination passivating film of innermost layer film strip fixed positive charge; Have p+ district passivating film 4 at p+ heavily doped layer 2, p+ district passivating film 4 is with the individual layer passivating film of fixed negative charge or the lamination passivating film of innermost layer film strip fixed negative charge.
N+ district passivating film 3 is SiN xFilm, or SiO 2/ Si 3N 4Stack membrane, or SiO 2/ Al 2O 3/ Si 3N 4Stack membrane; P+ district passivating film 4 is Al 2O 3/ Si 3N 4Stack membrane.
At the SiO as n+ district passivating film 3 2/ Al 2O 3/ Si 3N 4In the stack membrane, Al 2O 3Film thickness 10nm ~ 40nm, refractive index is 1.3 ~ 1.6, SiO 2The thickness of film is 10nm ~ 80nm, and refractive index is 1.5 ~ 1.8, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8nm ~ 2.3nm.
SiN as n+ district passivating film 3 xThe thickness of film is 40nm ~ 150nm, and refractive index is 1.8 ~ 2.3.
At the Al as p+ district passivating film 4 2O 3/ Si 3N 4In the stack membrane, Al 2O 3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3-1.6, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8-2.3.
A kind of preparation method who carries on the back the IBC solar battery structure of passivation at first makes n+ heavily doped layer 1, p+ heavily doped layer 2 at the back side of silicon chip 6; Then utilize respectively two mask plates 5 with different hollow outs at n+ heavily doped layer 1 and p+ heavily doped layer 2 deposition n+ district's passivating film 3 and p+ district passivating films 4.
Concrete steps are:
A) the N-type silicon chip 6 of resistivity 1 ~ 10ohm.cm is put into the TMAH solution of mass percent 25% or 20% ~ 50%KOH or NaOH solution and polished, remove the damage layer;
B) silicon chip 6 is put into the boron diffusion furnace, carry out the diffusion of single face boron at the back side of silicon chip 6, diffused sheet resistance is 30 ~ 40ohm/sq, forms p+ heavily doped layer 2;
C) use PECVD at boron diffusingsurface deposition one deck silicon nitride mask, the thickness of silicon nitride mask is 2500nm ~ 350nm;
D) purchase the Woolen-making liquid that forms in the KOH of service quality percentage 0.5% ~ 2% or NaOH solution adding 1% ~ 4% isopropyl alcohol silicon chip 6 is carried out one texture-etching side;
E) use HF to remove the silicon nitride mask on silicon chip 6 surfaces;
F) by thermal oxidation at silicon chip 6 Surface Creation silica, the thickness of silica is 120nm ~ 180nm;
G) silicon oxide masking film of back up etching slurry selective removal n+ heavily doped region;
H) KOH of service quality percentage 20% ~ 50% or NaOH solution etching n+ heavily doped region, groove depth 3um ~ 5um;
I) silicon chip 6 is put into phosphorus diffusion furnace, POCl 3The diffused sheet resistance of diffusion is 25 ~ 50ohm/sq, forms n+ heavily doped layer 1;
J) use HF to remove the PSG layer that phosphorus diffuses to form;
The mask plate 5 that k) will have a hollow out covers on the silicon chip 6, and the pattern of the pierced pattern of this mask plate 5 and p+ heavily doped region is in full accord, and silicon chip 6 is less than 20um with the deviation of the alignment of mask plate 5, adopts the PECVD deposition as the Al of p+ district passivating film 4 2O 3/ Si 3N 4Stack membrane, wherein Al 2O 3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3 ~ 1.6, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8 ~ 2.3;
L) mask plate 5 that another piece is had different hollow outs covers on the silicon chip 6, and the pattern of the pierced pattern of this mask plate 5 and N+ heavily doped region is in full accord, and silicon chip 6 is less than 20um with the deviation of the alignment of mask plate 5, adopts the PECVD deposition as the Si of n+ district passivating film 3 3N 4Film, Si 3N 4The thickness of film is 40um ~ 150um, and refractive index is 1.8 ~ 2.3;
M) PECVD deposited silicon nitride antireflective film, thickness are 40um ~ 80um, and refractive index is 1.8 ~ 2.3;
N) in n+ heavily doped region printing Ag slurry and oven dry;
O) at p+ heavily doped region printing Ag/Al slurry;
P) sintering.

Claims (8)

1. IBC solar battery structure of carrying on the back passivation, comprise silicon chip, have n+ heavily doped layer (1), p+ heavily doped layer (2) at the back side of silicon chip (6), and at n+ heavily doped layer (1), the upper extraction electrode of p+ heavily doped layer (2), it is characterized in that: have n+ district passivating film (3) at described n+ heavily doped layer (1), n+ district passivating film (3) is with the individual layer passivating film of fixed positive charge or the lamination passivating film of innermost layer film strip fixed positive charge;
Have p+ district passivating film (4) at described p+ heavily doped layer (2), p+ district passivating film (4) is with the individual layer passivating film of fixed negative charge or the lamination passivating film of innermost layer film strip fixed negative charge.
2. the IBC solar battery structure of back of the body passivation according to claim 1 is characterized in that: describedly comprise SiN with the individual layer passivating film of fixed positive charge or the innermost layer film with fixed positive charge of lamination passivating film xFilm, SiO 2Film, TiO 2Film, a-Si:H film;
Describedly comprise Al with the individual layer passivating film of fixed negative charge or the innermost layer film with fixed negative charge of lamination passivating film 2O 3Film and AlF 3Film.
3. the IBC solar battery structure of back of the body passivation according to claim 2, it is characterized in that: described n+ district passivating film (3) is SiN xFilm, or SiO 2/ Si 3N 4Stack membrane, or SiO 2/ Al 2O 3/ Si 3N 4Stack membrane; P+ district passivating film (4) is Al 2O 3/ Si 3N 4Stack membrane.
4. the IBC solar battery structure of back of the body passivation according to claim 3 is characterized in that: at described SiO as n+ district passivating film (3) 2/ Al 2O 3/ Si 3N 4In the stack membrane, Al 2O 3Film thickness 10nm ~ 40nm, refractive index is 1.3 ~ 1.6, SiO 2The thickness of film is 10nm ~ 80nm, and refractive index is 1.5 ~ 1.8, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8nm ~ 2.3nm.
5. the IBC solar battery structure of back of the body passivation according to claim 3 is characterized in that: described SiN as n+ district passivating film (3) xThe thickness of film is 40nm ~ 150nm, and refractive index is 1.8 ~ 2.3.
6. the IBC solar battery structure of back of the body passivation according to claim 3 is characterized in that: at described Al as p+ district passivating film (4) 2O 3/ Si 3N 4In the stack membrane, Al 2O 3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3-1.6, Si 3N 4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8-2.3.
7. a preparation method who carries on the back the IBC solar battery structure of passivation is characterized in that: at first make n+ heavily doped layer (1), p+ heavily doped layer (2) at the back side of silicon chip (6); Then utilize respectively two mask plates (5) with different hollow outs at n+ heavily doped layer (1) and p+ heavily doped layer (2) deposition n+ district's passivating film (3) and p+ district passivating film (4).
8. the preparation method of the IBC solar battery structure of back of the body passivation claimed in claim 1, it is characterized in that: concrete steps are:
A) carry out the diffusion of single face boron at the back side of N-type silicon chip (6);
B) at boron diffusingsurface deposition one deck silicon nitride mask, the thickness of silicon nitride mask is 2500nm ~ 350nm;
C) utilize silicon nitride mask to carry out one texture-etching side;
D) remove the surperficial silicon nitride mask of silicon chip (6);
E) make silicon oxide masking film on the whole surface of silicon chip (6), the thickness of silicon oxide masking film is 120nm ~ 180nm;
F) silicon oxide masking film of back up etching slurry selective removal n+ heavily doped region;
G) service quality percentage 20% ~ 50%KOH or NaOH solution etching n+ heavily doped region;
H) silicon chip (6) is carried out the phosphorus diffusion, diffuse to form n+ heavily doped layer (1) at the n+ heavily doped region;
I) use HF to remove the PSG layer that phosphorus diffuses to form;
The mask plate (5) that j) will have a hollow out covers on the silicon chip (6), and the hollow out of this mask plate (5) is consistent with the p+ heavily doped region, sees through the hollow out deposition p+ district passivation layer of this mask plate (5);
K) mask plate (5) that another piece is had a hollow out covers on the silicon chip (6), and the hollow out of this mask plate (5) is consistent with the n+ heavily doped region, sees through the hollow out deposition n+ district passivation layer of this mask plate (5);
L) at the front of N-type silicon chip (6) deposition antireflective film;
M) make electrode;
The sequencing of step j and step k can exchange.
CN2012105598455A 2012-12-21 2012-12-21 Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof Pending CN103035770A (en)

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CN103746011A (en) * 2013-12-24 2014-04-23 北京汉能创昱科技有限公司 Back-contact crystalline silicon cell and its manufacturing method
CN105047755A (en) * 2015-07-01 2015-11-11 遵义师范学院 Method for manufacturing double-face passivated solar cell
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CN114823933A (en) * 2022-06-30 2022-07-29 横店集团东磁股份有限公司 Solar cell structure and manufacturing method thereof
CN114937707A (en) * 2022-05-19 2022-08-23 苏州大学 Electron passivation contact structure and crystalline silicon solar cell

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CN109935638A (en) * 2019-01-21 2019-06-25 江西展宇新能源股份有限公司 A kind of IBC battery passivation film and a kind of IBC battery and preparation method thereof
CN111668320A (en) * 2020-06-15 2020-09-15 中国科学院微电子研究所 Silicon drift detector and processing method thereof
CN114937707A (en) * 2022-05-19 2022-08-23 苏州大学 Electron passivation contact structure and crystalline silicon solar cell
CN114823933A (en) * 2022-06-30 2022-07-29 横店集团东磁股份有限公司 Solar cell structure and manufacturing method thereof

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Application publication date: 20130410