CN103996745B - Can volume production boron diffusion bond phosphonium ion injection solar cell preparation method - Google Patents
Can volume production boron diffusion bond phosphonium ion injection solar cell preparation method Download PDFInfo
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- CN103996745B CN103996745B CN201410219826.7A CN201410219826A CN103996745B CN 103996745 B CN103996745 B CN 103996745B CN 201410219826 A CN201410219826 A CN 201410219826A CN 103996745 B CN103996745 B CN 103996745B
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 53
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 52
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000002347 injection Methods 0.000 title claims abstract description 17
- 239000007924 injection Substances 0.000 title claims abstract description 17
- -1 phosphonium ion Chemical class 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 68
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 68
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 230000008021 deposition Effects 0.000 claims abstract description 31
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 27
- 239000011574 phosphorus Substances 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000002500 ions Chemical class 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000004411 aluminium Substances 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 11
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005498 polishing Methods 0.000 claims abstract description 9
- 239000005297 pyrex Substances 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 210000002268 wool Anatomy 0.000 claims abstract description 9
- 238000003475 lamination Methods 0.000 claims abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 16
- 238000000637 aluminium metallisation Methods 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000005245 sintering Methods 0.000 abstract description 13
- 238000007639 printing Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 66
- 239000000243 solution Substances 0.000 description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012466 permeate Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000011056 performance test Methods 0.000 description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provide the invention provides it is a kind of can volume production the injection of boron diffusion bond phosphonium ion solar cell preparation method, including silicon chip twin polishing；Back side boron diffusion；Pyrex are removed, and front removes diffusion layer, and anti-carves back side removal because of dead layer formed by boron diffusion；Backside deposition silicon nitride film is used as making herbs into wool diaphragm；Front one texture-etching side；Remove the silicon nitride film at the back side, cleaning；Positive ion implanting phosphorus, and anneal；Plasma carves side；Back side single sided deposition aluminum oxide/silicon nitride stack film；Front deposited silicon nitride antireflective coating；The partially open film in the back side, exposes boron-dopped layer；Back up back electrode and aluminium lamination, front printing silver grating line；Sintering, test.The present invention be it is a kind of can the efficient crystal silicon solar batteries of volume production preparation method, on commercialized industrial equipment foundation, the conventional batteries production equipment for making full use of current enterprise's production line to possess, is substantially reduced equipment investment, and does not increase every watt of manufacturing cost of battery.
Description
Technical field
The invention belongs to crystal silicon solar energy battery manufacture field, it is related to a kind of whole face doping in back side and the back of the body passivation back of the body
Point contact high efficiency crystalline silicon solar cell exploitation, more particularly to it is a kind of can volume production use boron diffusion bond phosphonium ion injection
PERT crystal-silicon solar cells and preparation method thereof.
Background technology
Under the background become increasingly conspicuous the problems such as energy shortage, shortage of resources and environmental pollution, using natural resources too
Sun can generate electricity, and be taken as the countermeasure for solving global warming and the exhausted problem of fossil fuel, favored by countries in the world.So
And higher production cost governs its application, and as government subsidy is significantly cut down, the production cost of cell piece is reduced,
Improving generating efficiency turns into the problem of each manufacturer is extremely urgent.
The metaplasia production of modernization solar cell industry develops towards high efficiency, low cost direction, and it is blunt that back side doping combines the back side
Change point contact as the representative of high efficiency, low cost developing direction, it is advantageous that：
(1) excellent back reflector：Because the presence of cell backside deielectric-coating causes interior back reflection from conventional full Al-BSF
65% increases to 92-95%.On the one hand the absorption of the increased long glistening light of waves, trend of the another aspect especially to following Thin film cell is carried
Technical guarantee is supplied；
(2) the superior passivating back technology of dielectric film：Due to the good passivation of back side deielectric-coating, dielectric film
The back side recombination rate in region is reduced to 10-50cm/s；
(3) back side is adulterated comprehensively：The phenomenon for the back side current crowding that back point contact is brought is efficiently solved, and is provided
The passivation of full back surface field.
Although the battery structure, University of New South Wales early in last century the nineties just it has been proposed that
It is that a kind of process of suitable industrialized production is not determined.
The content of the invention
Goal of the invention：It is an object of the invention to for the deficiency in currently available technology, propose it is a kind of can volume production boron
The preparation method of the PERT crystal-silicon solar cells of diffusion bond phosphonium ion injection.
Technical scheme：To achieve the above object, this invention takes following technical scheme：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing；
(2) back side boron spreads；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is used as making herbs into wool diaphragm；
(5) front one texture-etching side；
(6) silicon nitride film at the back side, cleaning are removed；
(7) positive ion implanting phosphorus, and annealing；
(8) plasma carves side；
(9) back side single sided deposition aluminum oxide/silicon nitride stack film；
(10) front deposited silicon nitride antireflective coating；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact；
(12) back up back electrode and aluminium lamination, front printing silver grating line；
(13) sinter, test.
It is preferred that, step 1 is specially the P-type silicon piece for selecting resistivity to be 0.5-6 ohmcm, is 0.5- with mass fraction
10% sodium hydroxide or potassium hydroxide solution is polished at 45-100 DEG C to p-type silicon chip surface.
It is preferred that, step 2 is in diffusion furnace at a temperature of 600-900 DEG C, to carry out phosphorus diffusion to the back side of silicon chip, make
P-type crystal silicon sheet resistance is 20-150ohm/sq.
It is preferred that, the thickness of the silicon nitride film in step 4 is 50-120nm.
It is preferred that, the sodium hydroxide or potassium hydroxide solution that it is 0.5-10% with mass fraction that step 5, which is specifically, are in 45-
Carry out chemical attack is carried out to the front of silicon chip at 100 DEG C, the matte of Pyramid is prepared.
It is preferred that, step 6 is carried out after removing the silicon nitride film at the back side with the hydrofluoric acid for being 0.5-30% with mass fraction
Cleaning.
It is preferred that, step 7 is specially first ion implanting phosphorus source, is that 8-15keV, ion implanting amount are (1 in ion beam energy
×1015)-(7×1015)cm-2Afterwards, then in the lehr, annealed at a temperature of 800-1000 DEG C, the P-type crystal silicon after annealing
Sheet resistance is 40-120 ohm/sq.
It is preferred that, the thickness of the pellumina deposited in step 9 is 1-50nm, and the thickness of silicon nitride film is 10-200nm,
The thickness of the silicon nitride anti-reflecting film deposited in step 10 is 50-120nm, and the order of the step 9 and step 10 can be overturned.
It is preferred that, local sial contact is carried out using dot matrix or linear array in step 11, during using dot matrix, point it is a diameter of
30um-1mm, spacing is 50 um-2mm；During using linear array, line width is 5-150 um, and spacing is 200 um-5mm.
It is preferred that, printed in step 12 using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF.
Beneficial effect：There is advantages below using the present invention of above-mentioned technical proposal：
Specifically, compared with prior art, the technical scheme that the present invention takes has advantage following prominent：
1st, step of the present invention is simple, easily operated, be it is a kind of can the efficient crystal silicon solar batteries of volume production preparation method, its
It is mainly characterized in that on commercialized industrial equipment foundation, the conventional batteries production for making full use of current enterprise's production line to possess
Equipment, is substantially reduced equipment investment, and does not increase every watt of manufacturing cost of battery；
2nd, the PERT crystal silicon cell conversion efficiency batch average efficiencys prepared using technical solution of the present invention are reached
20.6%.And optical attenuation, front main grid, backplate and Al-BSF pulling force, and assembly end reliability testing meet TUV marks
It is accurate；
3rd, the present invention uses boron diffusing, doping mode by the back side, and front is annealed using ion implanting phosphorus by the way of doping,
Form N+PP+Structure, it is to avoid multiple high temp doping and mask process, which simplify preparation process, has saved preparation cost.
Brief description of the drawings
Fig. 1 is the structural representation of the crystal-silicon solar cell of the present invention.
Embodiment
The present invention is further elaborated below in conjunction with accompanying drawing and by specific embodiment.
During Fig. 1 is the structural representation for the crystal-silicon solar cell prepared using technical scheme, figure:1- is just
Face Ag electrodes, 2-SiNx antireflective films, 3- phosphorus dopings layer, 4-P types silicon substrate, 5- aluminum oxide/diaphragm, Al layers of the 6- back sides, 7- boron
Diffusion layer.
Embodiment 1：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing：The P-type silicon piece that resistivity is 0.5ohmcm is selected, with the hydrogen that mass fraction is 0.5%
Potassium oxide solution is polished at 45 DEG C to p-type silicon chip surface；
(2) back side boron spreads：In diffusion furnace at a temperature of 600 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes p-type
Crystalline silicon sheet resistance is 25ohm/sq；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is as making herbs into wool diaphragm, and the thickness of silicon nitride film is 50nm；
(5) front one texture-etching side：The front of silicon chip is entered at 45 DEG C for 0.5% potassium hydroxide solution with mass fraction
Row carries out chemical attack, prepares the matte of Pyramid；
(6) silicon nitride film at the back side, cleaning are removed：Remove and use mass fraction to be 1% after the silicon nitride film at the back side
Hydrofluoric acid cleaned；
(7) positive ion implanting phosphorus, and annealing：First ion implanting phosphorus source, is 8keV, ion implanting amount in ion beam energy
For 1 × 1015cm-2Afterwards, then in the lehr, annealed at a temperature of 800 DEG C, the P-type crystal silicon sheet resistance after annealing is 45ohm/
sq；
(8) plasma carves side：Using plasma is performed etching to the side of silicon chip, removes the short circuit of silicon chips periphery formation
Ring；
(9) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of the pellumina of deposition is 3nm, silicon nitride film
Thickness be 20nm；
(10) front deposited silicon nitride antireflective coating, the thickness of the silicon nitride anti-reflecting film of deposition is 55nm；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact, can carry out local sial contact using linear array, line width is 15um, and spacing is 800um；
(12) back side of silicon chip is printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF, it is then positive to print silver grating line；
(13) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 420 DEG C, forms complete cell piece N+
PP+Structure, after terminating, performance test is carried out to the battery prepared.
Step 9 and 10 order can be overturned.
Embodiment 2：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing：The P-type silicon piece that resistivity is 2ohmcm is selected, with the hydroxide that mass fraction is 5%
Sodium solution is polished at 80 DEG C to p-type silicon chip surface；
(2) back side boron spreads：In diffusion furnace at a temperature of 800 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes p-type
Crystalline silicon sheet resistance is 120ohm/sq；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is as making herbs into wool diaphragm, and the thickness of silicon nitride film is 80nm；
(5) front one texture-etching side：The front of silicon chip is carried out at 80 DEG C for 5% potassium hydroxide solution with mass fraction
Chemical attack is carried out, the matte of Pyramid is prepared；
(6) silicon nitride film at the back side, cleaning are removed：Remove and use mass fraction to be 5% after the silicon nitride film at the back side
Hydrofluoric acid cleaned；
(7) positive ion implanting phosphorus, and annealing：First ion implanting phosphorus source, is 12keV, ion implanting in ion beam energy
Measure as 5 × 1015cm-2Afterwards, then in the lehr, annealed at a temperature of 900 DEG C, the P-type crystal silicon sheet resistance after annealing is
75ohm/sq；
(8) plasma carves side：Using plasma is performed etching to the side of silicon chip, removes the short circuit of silicon chips periphery formation
Ring；
(9) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of the pellumina of deposition is 10nm, silicon nitride
The thickness of film is 100nm；
(10) front deposited silicon nitride antireflective coating, the thickness of the silicon nitride anti-reflecting film of deposition is 78nm；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact, can carry out local sial contact using linear array, line width is 40um, and spacing is 1mm；
(12) back side of silicon chip is printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF, it is then positive to print silver grating line；
(13) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 650 DEG C, forms complete cell piece N+
PP+Structure, after terminating, performance test is carried out to the battery prepared.
Step 9 and 10 order can be overturned.
Embodiment 3：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing：The P-type silicon piece that resistivity is 6ohmcm is selected, with the hydrogen-oxygen that mass fraction is 10%
Change sodium to be polished p-type silicon chip surface at 95 DEG C；
(2) back side boron spreads：In diffusion furnace at a temperature of 900 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes p-type
Crystalline silicon sheet resistance is 148ohm/sq；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is as making herbs into wool diaphragm, and the thickness of silicon nitride film is 120nm；
(5) front one texture-etching side：The front of silicon chip is entered at 95 DEG C for 10% sodium hydroxide solution with mass fraction
Row carries out chemical attack, prepares the matte of Pyramid；
(6) silicon nitride film at the back side, cleaning are removed：Remove and use mass fraction to be 25% after the silicon nitride film at the back side
Hydrofluoric acid cleaned；
(7) positive ion implanting phosphorus, and annealing：First ion implanting phosphorus source, is 15keV, ion implanting in ion beam energy
Measure as 7 × 1015cm-2Afterwards, then in the lehr, annealed at a temperature of 980 DEG C, the P-type crystal silicon sheet resistance after annealing is
120ohm/sq；
(8) plasma carves side：Using plasma is performed etching to the side of silicon chip, removes the short circuit of silicon chips periphery formation
Ring；
(9) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of the pellumina of deposition is 50nm, silicon nitride
The thickness of film is 200nm；
(10) front deposited silicon nitride antireflective coating, the thickness of the silicon nitride anti-reflecting film of deposition is 120nm；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact, can carry out local sial contact using linear array, line width is 150um, and spacing is 5mm；
(12) back side of silicon chip is printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF, it is then positive to print silver grating line；
(13) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 800 DEG C, forms complete cell piece N+
PP+Structure, after terminating, performance test is carried out to the battery prepared.
Step 9 and 10 order can be overturned.
Embodiment 4：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing：The P-type silicon piece that resistivity is 3ohmcm is selected, with the hydroxide that mass fraction is 5%
Potassium solution is polished at 60 DEG C to p-type silicon chip surface；
(2) back side boron spreads：In diffusion furnace at a temperature of 720 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes p-type
Crystalline silicon sheet resistance is 50ohm/sq；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is as making herbs into wool diaphragm, and the thickness of silicon nitride film is 65nm；
(5) front one texture-etching side：The front of silicon chip is carried out at 60 DEG C for 5% potassium hydroxide solution with mass fraction
Chemical attack is carried out, the matte of Pyramid is prepared；
(6) silicon nitride film at the back side, cleaning are removed：Remove and use mass fraction to be 10% after the silicon nitride film at the back side
Hydrofluoric acid cleaned；
(7) positive ion implanting phosphorus, and annealing：First ion implanting phosphorus source, is 10keV, ion implanting in ion beam energy
Measure as 6 × 1015cm-2Afterwards, then in the lehr, annealed at a temperature of 850 DEG C, the P-type crystal silicon sheet resistance after annealing is 40-
120ohm/sq；
(8) plasma carves side：Using plasma is performed etching to the side of silicon chip, removes the short circuit of silicon chips periphery formation
Ring；
(9) front deposited silicon nitride antireflective coating, the thickness of the silicon nitride anti-reflecting film of deposition is 65nm；
(10) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of the pellumina of deposition is 25nm, silicon nitride
The thickness of film is 85nm；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact, and using dot matrix progress local sial contact, a diameter of 300um of point, spacing is 900um；
(12) back side of silicon chip is printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF, it is then positive to print silver grating line；
(13) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 750 DEG C, forms complete cell piece N+
PP+Structure, after terminating, performance test is carried out to the battery prepared.
Step 9 and 10 order can be overturned.
Embodiment 5：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing：The P-type silicon piece that resistivity is 4ohmcm is selected, with the hydroxide that mass fraction is 8%
Sodium solution is polished at 70 DEG C to p-type silicon chip surface；
(2) back side boron spreads：In diffusion furnace at a temperature of 850 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes p-type
Crystalline silicon sheet resistance is 100ohm/sq；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is as making herbs into wool diaphragm, and the thickness of silicon nitride film is 90nm；
(5) front one texture-etching side：The front of silicon chip is entered at 70 DEG C for 8% solution of sodium hydroxide 8 with mass fraction
Row carries out chemical attack, prepares the matte of Pyramid；
(6) silicon nitride film at the back side, cleaning are removed：Remove and use mass fraction to be 15% after the silicon nitride film at the back side
Hydrofluoric acid cleaned；
(7) positive ion implanting phosphorus, and annealing：First ion implanting phosphorus source, is 15keV, ion implanting in ion beam energy
Measure as 4 × 1015cm-2Afterwards, then in the lehr, annealed at a temperature of 800 DEG C, the P-type crystal silicon sheet resistance after annealing is
100ohm/sq；
(8) plasma carves side：Using plasma is performed etching to the side of silicon chip, removes the short circuit of silicon chips periphery formation
Ring；
(9) front deposited silicon nitride antireflective coating, the thickness of the silicon nitride anti-reflecting film of deposition is 100nm；
(10) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of the pellumina of deposition is 40nm, silicon nitride
The thickness of film is 150nm；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact, and using dot matrix progress local sial contact, a diameter of 100um of point, spacing is 300um；
(12) back side of silicon chip is printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF, it is then positive to print silver grating line；
(13) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 500 DEG C, forms complete cell piece N+
PP+Structure, after terminating, performance test is carried out to the battery prepared.
Step 9 and 10 order can be overturned.
Embodiment 6：
It is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, comprise the following steps：
(1) silicon chip twin polishing：The P-type silicon piece that resistivity is 5ohmcm is selected, with the hydroxide that mass fraction is 2%
Sodium solution is polished at 85 DEG C to p-type silicon chip surface；
(2) back side boron spreads：In diffusion furnace at a temperature of 900 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes p-type
Crystalline silicon sheet resistance is 130ohm/sq；
(3) Pyrex are removed, and front is removed because back side boron spreads and permeates the diffusion layer formed, and anti-carves back side removal
Because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is as making herbs into wool diaphragm, and the thickness of silicon nitride film is 100nm；
(5) front one texture-etching side：The front of silicon chip is carried out at 85 DEG C for 2% sodium hydroxide solution with mass fraction
Chemical attack is carried out, the matte of Pyramid is prepared；
(6) silicon nitride film at the back side, cleaning are removed：Remove and use mass fraction to be 30% after the silicon nitride film at the back side
Hydrofluoric acid cleaned；
(7) positive ion implanting phosphorus, and annealing：First ion implanting phosphorus source, is 15keV, ion implanting in ion beam energy
Measure as 7 × 1015cm-2Afterwards, then in the lehr, annealed at a temperature of 1000 DEG C, the P-type crystal silicon sheet resistance after annealing is 40-
120ohm/sq；
(8) plasma carves side：Using plasma is performed etching to the side of silicon chip, removes the short circuit of silicon chips periphery formation
Ring；
(9) front deposited silicon nitride antireflective coating, the thickness of the silicon nitride anti-reflecting film of deposition is 110nm；
(10) back side single sided deposition aluminum oxide/silicon nitride stack film, the thickness of the pellumina of deposition is 15nm, silicon nitride
The thickness of film is 60nm；
(11) the partially open film in the back side, exposes boron-dopped layer：Using laser overleaf partially open film, expose boron and mix
Diamicton, carries out local sial contact, and using dot matrix progress local sial contact, a diameter of 900um of point, spacing is 1.5mm；
(12) back side of silicon chip is printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations back electrode and
Al-BSF, it is then positive to print silver grating line；
(13) sinter, test：It is sintered in sintering furnace, the temperature of sintering is 780 DEG C, forms complete cell piece N+
PP+Structure, after terminating, performance test is carried out to the battery prepared.
Step 9 and 10 order can be overturned.
The PERT crystal silicon solar energy battery conversion efficiency batches prepared using the technical scheme of above-mentioned implementation are averagely imitated
Rate reaches 20.6%.And optical attenuation, front main grid, backplate and Al-BSF pulling force, and assembly end reliability testing are accorded with
Close TUV standards.
Described above is the more preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill of the art
For personnel, under the premise without departing from the principles of the invention, the modification to the various equivalent form of values of the present invention falls within the application
Appended claims limited range.
Claims (5)
1. it is a kind of can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, it is characterised in that：Including with
Lower step：(1) silicon chip twin polishing；(2) back side boron spreads；(3) Pyrex are removed, and front is removed oozes because back side boron spreads
The diffusion layer formed thoroughly, and back side removal is anti-carved because of dead layer formed by boron diffusion：It is removed using online roller type equipment；
(4) backside deposition silicon nitride film is used as making herbs into wool diaphragm；(5) front one texture-etching side；(6) silicon nitride film at the back side is removed,
Cleaning；(7) positive ion implanting phosphorus, and annealing；(8) plasma carves side；(9) back side single sided deposition aluminum oxide/silicon nitride stack
Film；(10) front deposited silicon nitride antireflective coating；(11) the partially open film in the back side, exposes boron-dopped layer：Using laser in the back of the body
The partially open film in face, exposes boron-dopped layer, carries out local sial contact；(12) back up back electrode and aluminium lamination, front print
Brush silver grating line；(13) sinter, test；Wherein, step 1 is specially the P-type silicon piece for selecting resistivity to be 0.5-6ohmcm, uses matter
Amount fraction is polished for 0.5-10% sodium hydroxide or potassium hydroxide solution at 45-100 DEG C to p-type silicon chip surface；Step
Rapid 2 be that in diffusion furnace at a temperature of 600-900 DEG C, phosphorus diffusion is carried out to the back side of silicon chip, makes the P-type crystal silicon sheet resistance be
20-150ohm/sq；The thickness of silicon nitride film in step 4 is 50-120nm；Step 5 is specifically 0.5- with mass fraction
10% sodium hydroxide or potassium hydroxide solution carries out carry out chemical attack at 45-100 DEG C to the front of silicon chip, prepares gold
The matte of word turriform shape；Step 7 is specially first ion implanting phosphorus source, is that 8-15keV, ion implanting amount are 1 in ion beam energy
×1015-7×1015cm-2Afterwards, then in the lehr, annealed at a temperature of 800-1000 DEG C, the P-type crystal silicon side after annealing
Hinder for 40-120ohm/sq.
2. it is according to claim 1 can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, its
It is characterised by：Step 6 is cleaned after removing the silicon nitride film at the back side with the hydrofluoric acid for being 0.5-30% with mass fraction.
3. it is according to claim 1 can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, its
It is characterised by：The thickness of the pellumina deposited in step 9 is 1-50nm, and the thickness of silicon nitride film is 10-200nm, step 10
The thickness of the silicon nitride anti-reflecting film of middle deposition is 50-120nm, and the order of the step 9 and step 10 can be overturned.
4. it is according to claim 1 can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, its
It is characterised by：Local sial contact is carried out using dot matrix or linear array in step 11, during using dot matrix, a diameter of 30 μm of point-
1mm, spacing is 50 μm of -2mm；During using linear array, line width is 5-150 μm, and spacing is 200 μm of -5mm.
5. it is according to claim 1 can volume production boron diffusion bond phosphonium ion injection solar cell preparation method, its
It is characterised by：Back electrode and Al-BSF are printed using the method for aluminium paste silk-screen printing or the method for PVD AM aluminum metallizations in step 12.
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