CN105047755A - Method for manufacturing double-face passivated solar cell - Google Patents
Method for manufacturing double-face passivated solar cell Download PDFInfo
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- CN105047755A CN105047755A CN201510377224.9A CN201510377224A CN105047755A CN 105047755 A CN105047755 A CN 105047755A CN 201510377224 A CN201510377224 A CN 201510377224A CN 105047755 A CN105047755 A CN 105047755A
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- thin layer
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- passivation
- solar cell
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 32
- 239000011267 electrode slurry Substances 0.000 claims abstract description 29
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 13
- 229910004205 SiNX Inorganic materials 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 4
- 229910052593 corundum Inorganic materials 0.000 abstract description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a method for manufacturing a double-face passivated solar cell, and includes the steps of: A. front side passivation, B. reverse side passivation, and C. manufacture of a metal electrode. Front side passivation mainly includes: 1) adopting PECVD to deposit an N type alpha-Si thin layer with a thickness of 20 to 500nm on the front side of the solar cell; 2) adopting PECVD to deposit a SiOx thin layer with a thickness of 1 to 10nm on the surface of the N type alpha-Si thin layer; and 3) adopting PECVD to deposit a SiNx thin layer with a thickness of 70 to 120nm; and reverse side passivation mainly includes: 1) adopting PECVD to deposit a P type alpha-Si thin layer with a thickness of 20 to 500nm; 2) adopting an atomic layer deposition method to deposit a Al2O3 thin layer with a thickness of 10 to 300nm on the P type alpha-Si thin layer; and 3) adopting PECVD to deposit a SiNx thin layer with a thickness of 30 to 120nm. Compared with a conventional passivation method, the scheme adopts PECVD and the atomic layer deposition method to form a passivation layer, a lattice structure is not damaged, and a passivation effect is better. At the same time, back electrode slurry and positive electrode slurry have good conductivity, and have a capability of adapting to higher sheet resistance.
Description
Technical field
The present invention relates to area of solar cell, be specifically related to a kind of manufacture method of passivation on double surfaces solar cell.
Background technology
Solar cell is also called " solar chip " or " photocell ", is a kind of optoelectronic semiconductor thin slice utilizing the sunlight direct generation of electricity.As long as it is arrived by illumination, moment just exportable voltage and when there being loop generation current.The important directions of efficient solar battery development is the mode adopting passivation.The passivation in front is adopt the mode of PECVD to make H doped silicon nitride layer passivated surface dangling bonds; Passivating back adopts aluminium heavy doping to form aluminium back surface field or adopts ald alumina layer to form field passivation.These two kinds of modes can play good passivation effect to current silicon chip, but also there are some shortcomings:
1) the H doping content in front is not high, and passivation effect is not good;
2) aluminium heavy doping destroys crystal silicon, and passivation effect is had a greatly reduced quality;
3) alumina layer field passivation effect is fine, opens pressure and also has the space promoted
In order to improve above 3 points, need the method developing new enhancing passivation effect.
Summary of the invention
Object of the present invention is providing a kind of manufacture method of passivation on double surfaces solar cell of good passivation effect.
For achieving the above object, technical scheme of the present invention is as follows: a kind of manufacture method of passivation on double surfaces solar cell, wherein, comprises the following steps:
A, front passivation
1) adopt PECVD by the N-type α-Si thin layer of the front of solar cell deposition 20 ~ 500nm thickness;
2) adopt PECVD at the SiO of surface deposition 1 ~ 10nm thickness of described N-type α-Si thin layer
xthin layer;
3) PECVD is adopted to deposit the SiN of 70 ~ 120nm thickness
xthin layer;
B, passivating back
1) PECVD is adopted to deposit the P type α-Si thin layer of 20 ~ 500nm thickness;
2) adopt atomic layer deposition method on described P type α-Si thin layer, deposit the Al of 10 ~ 300nm thickness
2o
3thin layer;
3) PECVD is adopted to deposit the SiN of 30 ~ 120nm
xthin layer;
The making of C, metal electrode
1) at the back up penetrability back electrode slurry of solar cell, back electrode slurry forms the pattern of grid line figure, then dries, and described back electrode slurry is silver slurry or other slurries; Then printing back of the body electric field slurry, dry, described back of the body electric field slurry is aluminium paste;
2) at the front print positive electrode slurry of solar cell, described positive electrode slurry is positive silver paste;
3) carry out sintering processes, after sintering, positive electrode slurry at least contacts with N-type α-Si thin layer, and back electrode slurry at least contacts with P type α-Si thin layer.
Atomic layer deposition method as herein described refer to a kind of can by material with the monatomic form membrane method being plated in substrate surface in layer.Described PID is that electromotive force brings out attenuation effect.
Adopt such scheme, in sintering process, back electrode slurry can penetrate SiNx and Al2O3 layer even P type α-Si thin layer, directly touches the even Si substrate of P type α-Si thin layer.Back electrode slurry is aluminium paste or silver slurry or both mixing, and it has good conductivity and the strong feature of tack, can additional conductive, strengthens the effect of conduction.Positive electrode slurry can corrode SiNx layer, directly touches the even Si substrate of N-type α-Si thin layer, has good contact performance and electric conductivity.Compared with traditional passivating method, the mode that this programme front adopts N-type α-Si thin layer to be combined with SiOx thin layer strengthens passivation effect, and the back side adopts P type α-Si thin layer and Al
2o
3in conjunction with mode strengthen passivation effect; N-type α-Si thin layer and P type α-Si thin layer all better can promote open pressure, provide better electric conductivity; SiOx thin layer can provide better anti-PID performance.
Further, in step A, as preferable examples: the thickness of described N-type α-Si thin layer is 120nm, the thickness of described SiOx thin layer is 4nm, and the thickness of described SiNx thin layer is 85nm.A large amount of tests proves, the anti-PID performance that the passivation layer of this thickness has is good, and cost performance is high.
Further, in step B, as preferable examples: the thickness of described P type α-Si thin layer is 50nm, described Al
2o
3thickness be 150nm, described SiN
xthe thickness of thin layer is 80nm.A large amount of tests proves, the passivation effect of this thickness is better.
Further, in step C, described positive silver paste can print the live width being less than 70nm, and described back electrode slurry has penetrability, can corroding silicon nitride and aluminium oxide.Positive silver paste can be selected conventional main flow positive silver paste as Du Pont 17F, Du Pont 18A, be congratulated Li Shi 9621B, Samsung 8700 etc., back electrode slurry there is penetrability, can corroding silicon nitride and aluminium oxide, back of the body electric field slurry is conventional main flow aluminium paste, as the emerging 8252C2 of scholar etc.
Embodiment
Below by embodiment, the present invention is further detailed explanation:
Embodiment 1:
This programme provides a kind of manufacture method of passivation on double surfaces solar cell, comprises the following steps:
A, front passivation
1) adopt PECVD by the N-type α-Si thin layer of the front of solar cell deposition 120nm thickness;
2) adopt PECVD at the SiO of the surface deposition 4nm thickness of described N-type α-Si thin layer
xthin layer;
3) PECVD is adopted to deposit the SiN of 85nm thickness
xthin layer;
B, passivating back
1) PECVD is adopted to deposit the P type α-Si thin layer of 50nm thickness;
2) adopt atomic layer deposition method on described P type α-Si thin layer, deposit the Al of 30nm thickness
2o
3thin layer;
3) PECVD is adopted to deposit the SiN of 80nm
xthin layer;
Embodiment 2:
This programme provides a kind of manufacture method of passivation on double surfaces solar cell, comprises the following steps:
A, front passivation
1) adopt PECVD by the N-type α-Si thin layer of the front of solar cell deposition 20nm thickness;
2) adopt PECVD at the SiO of the surface deposition 4nm thickness of described N-type α-Si thin layer
xthin layer;
3) PECVD is adopted to deposit the SiN of 85nm thickness
xthin layer;
B, passivating back
1) PECVD is adopted to deposit the P type α-Si thin layer of 20nm thickness;
2) adopt atomic layer deposition method on described P type α-Si thin layer, deposit the Al of 30nm thickness
2o
3thin layer;
3) PECVD is adopted to deposit the SiN of 80nm
xthin layer;
Embodiment 3:
This programme provides a kind of manufacture method of passivation on double surfaces solar cell, comprises the following steps:
A, front passivation
1) adopt PECVD by the N-type α-Si thin layer of the front of solar cell deposition 120nm thickness;
2) adopt PECVD at the SiO of the surface deposition 10nm thickness of described N-type α-Si thin layer
xthin layer;
3) PECVD is adopted to deposit the SiN of 80nm thickness
xthin layer;
B, passivating back
1) PECVD is adopted to deposit the P type α-Si thin layer of 20nm thickness;
2) adopt atomic layer deposition method on described P type α-Si thin layer, deposit the Al of 80nm thickness
2o
3thin layer;
3) PECVD is adopted to deposit the SiN of 80nm
xthin layer;
The making of C, metal electrode
1) at the back up penetrability back electrode slurry of solar cell, back electrode slurry forms the pattern of grid line figure, then dries, and described back electrode slurry is silver slurry or other corrosivity slurries; Then printing back of the body electric field slurry, dries, and back of the body electric field slurry is the emerging 8252C2 of scholar;
2) at the front print positive electrode slurry of solar cell, described positive electrode slurry is positive silver paste Du Pont 18A;
3) carry out sintering processes, after sintering, positive electrode slurry at least contacts with N-type α-Si thin layer, and back electrode slurry at least contacts with P type α-Si thin layer.
Following table is the contrast of the solar cell that embodiment conventional passivation method obtains:
| Battery efficiency | Production capacity | Battery cost | Efficiency cost | Rate of finished products | Anti-PID ability | |
| Embodiment 1 | High | High | Slightly high | Low | High | Good |
| Embodiment 2 | Low | High | Slightly high | Slightly high | Low | Good |
| Embodiment 3 | Low | Low | High | High | Low | Good |
| Conventional method | Low | High | Low | Low | High | Difference |
As shown above, the cell piece adopting this programme to make adopts excellent passivation technology and treatment process, and its battery efficiency and anti-PID ability greatly improve, and the cost of every sheet cell piece only increases slightly.If compared with generating capacity, its integrated cost is suitable with conventional method, and can ensure rate of finished products.
Above-described is only embodiments of the invention, and in scheme, the general knowledge such as known concrete structure and characteristic does not do too much description at this.Should be understood that; for a person skilled in the art, under the prerequisite not departing from the present invention program, some distortion and improvement can also be made; these also should be considered as protection scope of the present invention, and these all can not affect effect of the invention process and practical applicability.The protection range that this application claims should be as the criterion with the content of its claim, and the embodiment in specification etc. record the content that may be used for explaining claim.
Claims (4)
1. a manufacture method for passivation on double surfaces solar cell, is characterized in that, comprises the following steps:
A, front passivation
1) adopt PECVD by the N-type α-Si thin layer of the front of solar cell deposition 20 ~ 500nm thickness;
2) adopt PECVD at the SiO of surface deposition 1 ~ 10nm thickness of described N-type α-Si thin layer
x thin layer;
3) PECVD is adopted to deposit the SiN of 70 ~ 120nm thickness
x thin layer;
B, passivating back
1) PECVD is adopted to deposit the P type α-Si thin layer of 20 ~ 500nm thickness;
2) adopt atomic layer deposition method on described P type α-Si thin layer, deposit the Al of 10 ~ 300nm thickness
2o
3thin layer;
3) PECVD is adopted to deposit the SiN of 30 ~ 120nm
x thin layer;
The making of C, metal electrode
1) at the back up penetrability back electrode slurry of solar cell, back electrode slurry forms the pattern of grid line figure, then dries, and described back electrode slurry is silver slurry or other slurries; Then printing back of the body electric field slurry, dry, described back of the body electric field slurry is aluminium paste;
2) at the front print positive electrode slurry of solar cell, described positive electrode slurry is positive silver paste;
3) carry out sintering processes, after sintering, positive electrode slurry at least contacts with N-type α-Si thin layer, and back electrode slurry at least contacts with P type α-Si thin layer.
2. the manufacture method of passivation on double surfaces solar cell as claimed in claim 1, it is characterized in that: in step A, the thickness of described N-type α-Si thin layer is 120nm, described SiO
x the thickness of thin layer is 4nm, described SiN
x the thickness of thin layer is 85nm.
3. the manufacture method of passivation on double surfaces solar cell as claimed in claim 1, it is characterized in that, in step B, the thickness of described P type α-Si thin layer is 50nm, described Al
2o
3thickness be 150nm, described SiN
x the thickness of thin layer is 80nm.
4. the manufacture method of the passivation on double surfaces solar cell as described in any one of claim 1-3, is characterized in that, in step C, described positive silver paste can print the live width being less than 70nm, and described back electrode slurry has penetrability, can corroding silicon nitride and aluminium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510377224.9A CN105047755B (en) | 2015-07-01 | 2015-07-01 | The manufacture method of passivation on double surfaces solaode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510377224.9A CN105047755B (en) | 2015-07-01 | 2015-07-01 | The manufacture method of passivation on double surfaces solaode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105047755A true CN105047755A (en) | 2015-11-11 |
| CN105047755B CN105047755B (en) | 2017-03-01 |
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ID=54454141
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510377224.9A Expired - Fee Related CN105047755B (en) | 2015-07-01 | 2015-07-01 | The manufacture method of passivation on double surfaces solaode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110228798A (en) * | 2019-06-05 | 2019-09-13 | 南开大学 | A kind of porous carbon membranes and its preparation method and application of the monatomic doping of semimetal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544195A (en) * | 2010-12-30 | 2012-07-04 | 上海凯世通半导体有限公司 | Solar cell and manufacturing method thereof |
| CN103035770A (en) * | 2012-12-21 | 2013-04-10 | 常州天合光能有限公司 | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof |
| CN103050573A (en) * | 2012-12-07 | 2013-04-17 | 常州大学 | Preparation method of back passivated battery |
| CN104201214A (en) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | Back-passivated solar battery and preparation method thereof |
-
2015
- 2015-07-01 CN CN201510377224.9A patent/CN105047755B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544195A (en) * | 2010-12-30 | 2012-07-04 | 上海凯世通半导体有限公司 | Solar cell and manufacturing method thereof |
| CN103050573A (en) * | 2012-12-07 | 2013-04-17 | 常州大学 | Preparation method of back passivated battery |
| CN103035770A (en) * | 2012-12-21 | 2013-04-10 | 常州天合光能有限公司 | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof |
| CN104201214A (en) * | 2014-08-21 | 2014-12-10 | 广东爱康太阳能科技有限公司 | Back-passivated solar battery and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110228798A (en) * | 2019-06-05 | 2019-09-13 | 南开大学 | A kind of porous carbon membranes and its preparation method and application of the monatomic doping of semimetal |
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