CN203038931U - IBC solar cell structure with passivated back - Google Patents
IBC solar cell structure with passivated back Download PDFInfo
- Publication number
- CN203038931U CN203038931U CN 201220711944 CN201220711944U CN203038931U CN 203038931 U CN203038931 U CN 203038931U CN 201220711944 CN201220711944 CN 201220711944 CN 201220711944 U CN201220711944 U CN 201220711944U CN 203038931 U CN203038931 U CN 203038931U
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- film
- heavily doped
- passivating film
- district
- doped layer
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Abstract
The utility model relates to the technical field of IBC solar cells, and especially relates to an IBC solar cell structure with a passivated back. The back of a silicon chip of the cell is provided with an n+ heavily doped layer and a p+ heavily doped layer. n+ and p+ region passivated films are arranged on the n+ heavily doped layer and the p+ heavily doped layer. The n+ region passivated film is a monolayer passivated film with a fixed positive charge or a lamination passivated film, wherein the most inner layer film of the lamination passivated film is provided with a fixed positive charge. The p+ region passivated film is a monolayer passivated film with a fixed negative charge or a lamination passivated film, wherein the most inner layer film of the lamination passivated film is provided with a fixed negative charge. On the back of the cell, inductive charges are respectively induced on the n+ heavily doped layer and the p+ heavily doped layer due to different fixed charges of n+ and p+ region passivated films. With the inductive charges, field-effect passivation is formed on the surface of the cell, thus the passivation effect of the back of the cell is improved.
Description
Technical field
The utility model relates to the IBC technical field of solar batteries, particularly a kind of IBC solar battery structure of carrying on the back passivation.
Background technology
IBC (Interdigitated back contact) battery: back contacted solar cell.
PECVD (Plasma Enhanced Chemical Vapor Deposition): plasma enhanced chemical vapor deposition method.
PSG layer: silicon phosphorus glass layer.
The IBC solar cell is selected the N-type silicon substrate material usually for use, carries out phosphorus, boron local diffusion respectively at the silicon chip back side, forms to have n+ heavily doped layer, the p+ heavily doped layer that interdigitate is arranged.As shown in Figure 1, the n+ heavily doped layer of IBC battery, p+ heavily doped layer are owing in the same side, adopt monofilm or stack membrane as passivation layer usually.
The utility model content
Technical problem to be solved in the utility model is: a kind of IBC solar battery structure of carrying on the back passivation is provided, improves the back of the body passivation effect of IBC solar cell.
The technical scheme that its technical problem that solves the utility model adopts is: a kind of IBC solar battery structure of carrying on the back passivation, comprise silicon chip, have n+ heavily doped layer, p+ heavily doped layer in silicon chip back, and on n+ heavily doped layer, p+ heavily doped layer extraction electrode, have n+ district passivating film at the n+ heavily doped layer, n+ district passivating film is the individual layer passivating film of band fixed positive charge or the lamination passivating film of innermost layer film band fixed positive charge; Have p+ district passivating film at the p+ heavily doped layer, p+ district passivating film is the individual layer passivating film of band fixed negative charge or the lamination passivating film of innermost layer film band fixed negative charge.Fixed charge in the passivating film can saturated silicon face dangling bonds, reduce minority carrier compound on the surface, thereby obtain surface passivation effect preferably.
Particularly, the innermost layer film of the band fixed positive charge of the individual layer passivating film of band fixed positive charge or lamination passivating film comprises SiN
xFilm, SiO
2Film, TiO
2Film and a-Si:H film; The innermost layer film of the individual layer passivating film of band fixed negative charge or the band fixed negative charge of lamination passivating film comprises Al
2O
3And AlF
3Film.The adhesive ability of these passivating films and silicon chip is strong, and thermal coefficient of expansion is low, compact structure, and the impermeabilisation ability is strong, and strong to the blocking capability of metal ion, quality is hard and wear-resisting, and anti-electrical breakdown capability is strong, and thermal shock resistance is good.
For improving passivation effect, preferred, n+ district passivating film is SiN
xFilm, or SiO
2/ Si
3N
4Stack membrane, or SiO
2/ Al
2O
3/ Si
3N
4Stack membrane; P+ district passivating film is Al
2O
3/ Si
3N
4Stack membrane.
At the SiO as n+ district passivating film
2/ Al
2O
3/ Si
3N
4In the stack membrane, Al
2O
3Film thickness 10nm ~ 40nm, refractive index is 1.3 ~ 1.6, SiO
2The thickness of film is 10nm ~ 80nm, and refractive index is 1.5 ~ 1.8, Si
3N
4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8nm ~ 2.3nm.
Perhaps, as the SiN of n+ district passivating film
xThe thickness of film is 40nm ~ 150nm, and refractive index is 1.8 ~ 2.3.
Perhaps, at the Al as p+ district passivating film
2O
3/ Si
3N
4In the stack membrane, Al
2O
3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3-1.6, Si
3N
4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8-2.3.
The beneficial effects of the utility model are: cell backside because of n+ district passivating film and p+ district passivating film with the different fixing electric charge induce charge inducing at n+ heavily doped layer, p+ heavily doped layer respectively, this kind electric charge induction makes battery surface form the field effect passivation, has improved the passivation effect of cell backside.
Description of drawings
Fig. 1 is the structural representation of existing IBC solar cell;
Fig. 2 is the preparation schematic diagram of the p+ district passivating film of IBC solar cell of the present utility model.
Fig. 3 is the preparation schematic diagram of the n+ district passivating film of IBC solar cell of the present utility model.
Fig. 4 is the structural representation of IBC solar cell of the present utility model.
Among the figure, 1.n+ heavily doped layer, 2.p+ heavily doped layer, 3.n+ district passivating film, 4.p+ district passivating film, 5. mask plate, 6. silicon chip.
Embodiment
Shown in Fig. 2,3 and 4, a kind of IBC solar battery structure of carrying on the back passivation, comprise silicon chip, have n+ heavily doped layer 1, p+ heavily doped layer 2 at the back side of silicon chip 6, and on n+ heavily doped layer 1, p+ heavily doped layer 2 extraction electrode, have n+ district passivating film 3 at n+ heavily doped layer 1, n+ district passivating film 3 is the individual layer passivating film of band fixed positive charge or the lamination passivating film of innermost layer film band fixed positive charge; Have p+ district passivating film 4 at p+ heavily doped layer 2, p+ district passivating film 4 is the individual layer passivating film of band fixed negative charge or the lamination passivating film of innermost layer film band fixed negative charge.
N+ district passivating film 3 is SiN
xFilm, or SiO
2/ Si
3N
4Stack membrane, or SiO
2/ Al
2O
3/ Si
3N
4Stack membrane; P+ district passivating film 4 is Al
2O
3/ Si
3N
4Stack membrane.
At the SiO as n+ district passivating film 3
2/ Al
2O
3/ Si
3N
4In the stack membrane, Al
2O
3Film thickness 10nm ~ 40nm, refractive index is 1.3 ~ 1.6, SiO
2The thickness of film is 10nm ~ 80nm, and refractive index is 1.5 ~ 1.8, Si
3N
4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8nm ~ 2.3nm.
SiN as n+ district passivating film 3
xThe thickness of film is 40nm ~ 150nm, and refractive index is 1.8 ~ 2.3.
At the Al as p+ district passivating film 4
2O
3/ Si
3N
4In the stack membrane, Al
2O
3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3-1.6, Si
3N
4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8-2.3.
A kind of preparation method who carries on the back the IBC solar battery structure of passivation at first makes n+ heavily doped layer 1, p+ heavily doped layer 2 at the back side of silicon chip 6; Utilize two mask plates 5 with different hollow outs at n+ heavily doped layer 1 and p+ heavily doped layer 2 deposition n+ district's passivating film 3 and p+ district passivating films 4 then respectively.
Concrete steps are:
A) the N-type silicon chip 6 of resistivity 1 ~ 10ohm.cm is put into the TMAH solution of mass percent 25% or 20% ~ 50%KOH or NaOH solution and polished, remove the damage layer;
B) silicon chip 6 is put into the boron diffusion furnace, carry out the diffusion of single face boron at the back side of silicon chip 6, the resistance of diffusion side is 30 ~ 40ohm/sq, forms p+ heavily doped layer 2;
C) use PECVD at boron diffusingsurface deposition one deck silicon nitride mask, the thickness of silicon nitride mask is 2500nm ~ 350nm;
D) purchase the Woolen-making liquid that forms in the KOH of service quality percentage 0.5% ~ 2% or NaOH solution adding 1% ~ 4% isopropyl alcohol silicon chip 6 is carried out single face making herbs into wool;
E) use HF to remove the silicon nitride mask on silicon chip 6 surfaces;
F) generate silica by thermal oxidation on silicon chip 6 surfaces, the thickness of silica is 120nm ~ 180nm;
G) silicon oxide masking film of back up etching slurry selective removal n+ heavily doped region;
H) KOH of service quality percentage 20% ~ 50% or NaOH solution etching n+ heavily doped region, groove depth 3um ~ 5um;
I) silicon chip 6 is put into the phosphorus diffusion furnace, diffusion side's resistance of POCl3 diffusion is 25 ~ 50ohm/sq, forms n+ heavily doped layer 1;
J) use HF to remove the PSG layer that phosphorus diffuses to form;
K) mask plate 5 that will have a hollow out covers on the silicon chip 6, and the pattern of the pierced pattern of this mask plate 5 and p+ heavily doped region is in full accord, and silicon chip 6 is less than 20um with the deviation of the alignment of mask plate 5, adopts the PECVD deposition as the Al of p+ district passivating film 4
2O
3/ Si
3N
4Stack membrane, wherein Al
2O
3The thickness of film is 10nm ~ 40nm, and refractive index is that the thickness of 1.3 ~ 1.6, Si3N4 film is 30nm ~ 100nm, and refractive index is 1.8 ~ 2.3;
L) mask plate 5 that another piece is had different hollow outs covers on the silicon chip 6, and the pattern of the pierced pattern of this mask plate 5 and N+ heavily doped region is in full accord, and silicon chip 6 is less than 20um with the deviation of the alignment of mask plate 5, adopts the PECVD deposition as the Si of n+ district passivating film 3
3N
4Film, Si
3N
4The thickness of film is 40um ~ 150um, and refractive index is 1.8 ~ 2.3;
M) PECVD deposited silicon nitride antireflective film, thickness are 40um ~ 80um, and refractive index is 1.8 ~ 2.3;
N) in n+ heavily doped region printing Ag slurry and oven dry;
O) at p+ heavily doped region printing Ag/Al slurry;
Sintering.
Claims (6)
1. IBC solar battery structure of carrying on the back passivation, comprise silicon chip, have n+ heavily doped layer (1), p+ heavily doped layer (2) at the back side of silicon chip (6), and at n+ heavily doped layer (1), the last extraction electrode of p+ heavily doped layer (2), it is characterized in that: have n+ district passivating film (3) at described n+ heavily doped layer (1), n+ district passivating film (3) is the individual layer passivating film of band fixed positive charge or the lamination passivating film of innermost layer film band fixed positive charge;
Have p+ district passivating film (4) at described p+ heavily doped layer (2), p+ district passivating film (4) is the individual layer passivating film of band fixed negative charge or the lamination passivating film of innermost layer film band fixed negative charge.
2. the IBC solar battery structure of back of the body passivation according to claim 1, it is characterized in that: the innermost layer film of the individual layer passivating film of described band fixed positive charge or the band fixed positive charge of lamination passivating film comprises SiN
xFilm, SiO
2Film, TiO
2Film, a-Si:H film;
The innermost layer film of the individual layer passivating film of described band fixed negative charge or the band fixed negative charge of lamination passivating film comprises Al
2O
3Film and AlF
3Film.
3. the IBC solar battery structure of back of the body passivation according to claim 2, it is characterized in that: described n+ district passivating film (3) is SiN
xFilm, or SiO
2/ Si
3N
4Stack membrane, or SiO
2/ Al
2O
3/ Si
3N
4Stack membrane; P+ district passivating film (4) is Al
2O
3/ Si
3N
4Stack membrane.
4. the IBC solar battery structure of back of the body passivation according to claim 3 is characterized in that: at described SiO as n+ district passivating film (3)
2/ Al
2O
3/ Si
3N
4In the stack membrane, Al
2O
3Film thickness 10nm ~ 40nm, refractive index is 1.3 ~ 1.6, SiO
2The thickness of film is 10nm ~ 80nm, and refractive index is 1.5 ~ 1.8, Si
3N
4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8nm ~ 2.3nm.
5. the IBC solar battery structure of back of the body passivation according to claim 3 is characterized in that: described SiN as n+ district passivating film (3)
xThe thickness of film is 40nm ~ 150nm, and refractive index is 1.8 ~ 2.3.
6. the IBC solar battery structure of back of the body passivation according to claim 3 is characterized in that: at described Al as p+ district passivating film (4)
2O
3/ Si
3N
4In the stack membrane, Al
2O
3The thickness of film is 10nm ~ 40nm, and refractive index is 1.3-1.6, Si
3N
4The thickness of film is 30nm ~ 100nm, and refractive index is 1.8-2.3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220711944 CN203038931U (en) | 2012-12-21 | 2012-12-21 | IBC solar cell structure with passivated back |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220711944 CN203038931U (en) | 2012-12-21 | 2012-12-21 | IBC solar cell structure with passivated back |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203038931U true CN203038931U (en) | 2013-07-03 |
Family
ID=48691024
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|---|---|---|---|
| CN 201220711944 Expired - Lifetime CN203038931U (en) | 2012-12-21 | 2012-12-21 | IBC solar cell structure with passivated back |
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| Country | Link |
|---|---|
| CN (1) | CN203038931U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035770A (en) * | 2012-12-21 | 2013-04-10 | 常州天合光能有限公司 | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof |
| CN104009102A (en) * | 2014-06-16 | 2014-08-27 | 中电投西安太阳能电力有限公司 | Back passivation layer structure, back passivation P type solar cell, preparation method of back passivation layer structure and preparation method of back passivation P type solar cell |
| CN105637647A (en) * | 2013-12-09 | 2016-06-01 | 太阳能公司 | Solar cell emitter region fabrication using self-aligned implant and cap |
-
2012
- 2012-12-21 CN CN 201220711944 patent/CN203038931U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103035770A (en) * | 2012-12-21 | 2013-04-10 | 常州天合光能有限公司 | Back passivated iron-binding capacity (IBC) solar cell structure and preparation method thereof |
| CN105637647A (en) * | 2013-12-09 | 2016-06-01 | 太阳能公司 | Solar cell emitter region fabrication using self-aligned implant and cap |
| US11316056B2 (en) | 2013-12-09 | 2022-04-26 | Sunpower Corporation | Solar cell emitter region fabrication using self-aligned implant and cap |
| CN104009102A (en) * | 2014-06-16 | 2014-08-27 | 中电投西安太阳能电力有限公司 | Back passivation layer structure, back passivation P type solar cell, preparation method of back passivation layer structure and preparation method of back passivation P type solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINA SOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130703 |